3
Device Trends
Market trends and the development of horizontal-deflection output transistors
Device Trends
Market requirements
TV Wide-screen TVs
HDTVs / Projectors
Multimedia-compatible TVs
Digital TVs
resolution
Improved in screen525p, 1125i,quality
Screen resolution:
780p
Progressive system is improved
Starting grand wave digital
broadcasting
Various appllications such as
DVDs and Cable TVs
Various screen size
Flat screen
Low loss
Video display monitors
Wide-screen (4 : 3) –> (16 : 9)
aspect ratio:
Large screen size
Flat screen
Low loss
Lower prices
High horizontal frequency
21 inches f
H
= 120 kHz –> 135 kHz
Large screen size
Standard size: 15 inches –> 17 inches
Low pricepart count
Reduced
Low loss
Flat screen
(driving circuit and resonating capacitor are fixed)
Development of Horizontal-Deflection Output Transistors
Emitter contact shape and chip size optimization
Enhancement of 1700 V
product line
Low price due to reduction in
chip size
Development of 2000-V products
Development of products incorporating
diodes for use in digital TVs
Shorter trr
Reduced saturation voltage
V
CE
(sat) = 3 V (max)
High-current devices housed in
TO-3P(H)IS packages
21-A products available
Reduced variation in product characteristics
Reduced switching loss
to
high-frequency operation(ttf parts) due(max)
f = 150 ns
Reduced saturation voltage at high currents
V
CE
(sat) = 3 V (max)
devices housed in
High-current packages
TO-3P(H)IS
allowable
Increased IS 65 Wpower dissipation
TO-3P(H)
–> 75 W
21-A products available
TO-3P(LH)
Reduced variation in product characteristics
200 W –> 220 W
Fourth generation of horizontal-
deflection output transistors
Fifth generation of horizontal-deflection
output transistors
4
1
2
Features of Fourth and Fifth Generation
Toshiba’s proprietary “glass mesa” structure
Glass
passivation
High breakdown capability
Contact shape
Conventional comb type
The product features a glass mesa structure,
the use of which yields a wide forward- and
reverse-biased safe operating area.
Emitter
N
+
P
Base
Low saturation voltage
N
N
+
V
CE
(sat) = 3 V (max)
Note: Used for 2SC-Series devices without
damper diodes.
Collector
B
E
3
Wider range of optimum drive conditions
Fluctuation in optimum drive conditions due to variation in device quality has been minimized for
ease of design.
Fourth and fifth-generation
mesh type
3
Revised emitter contact shape and optimized chip size
Chip design has been optimized using Toshiba simulation technology. The emitter's contact area
has been widened by changing the contact shape below the emitter electrode from comb type to the
new mesh type. As a result, the saturation voltage (V
CE
(sat)) and fall time (tf) have both been
reduced, thus reducing switching loss.
B
E
4
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