Power Transistor Modules
Power Transistor Modules (Full-Mold Type S-10)
Part Number
Circuit Configuration
Chip
Absolute Maximum Ratings
P
T
V
CEO
I
C
(Ta
=
25°C)
(V)
(A)
(W)
±80
±80
−100
80
±
10
60
±
10
60
±
10
100
±
15
100
±
15
60
±
10
60
±
10
100
±4
±2
−5
2
5
2
2
3
1.5
4
4
4
4
4
4
4
4
4
4
4
4
4
Electrical Characteristics
h
FE
Min
2000
2000
1000
2000
1000
2000
2000
2000
2000
2000
2000
V
CE
(V)
±2
±2
−3
2
4
2
2
2
2
2
2
I
C
(A)
±1
±1
−3
1
3
1
1
1
0.7
1
1.5
V
CE
(sat)
(V) Max
±1.5
±1.5
−2
1.5
2
1.5
1.5
1.5
1.2
1.5
1.5
I
C
(A)
±3
±1
−3
1
3
1
1
1
0.5
3
1.5
I
B
(mA)
±6
±1
−12
1
10
1
1
V
BH
=
4.2 V
V
BH
=
4.2 V
10
3
MP4005
MP4006
MP4009
MP4013
MP4015
MP4020
MP4021
MP4024
MP4025
MP4101
MP4104
NPN x 2, PNP x 2
NPN x 2, PNP x 2
PNP x 4
NPN x 4
NPN x 4
NPN x 4
NPN x 4
NPN x 4
NPN x 4
NPN x 4
NPN x 4
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
Darlington
: Built-in Zener diode between C and B
: Transistor with built-in bias resistance
The above products may be available in a version in which the outer leads of the part are Lead(Pb)-Free-finished.
Please contact your sales representative for product-by-product details regarding RoHS compatibility or for any other concerns.
Power Transistor Modules (Full-Mold Type S-12)
Part Number
Circuit Configuration
Chip
Absolute Maximum Ratings
P
T
I
C
V
CEO
(Ta
=
25°C)
(V)
(A)
(W)
100
100
80
−100
±80
3
2
3
−5
±3
4.4
4.4
4.4
4.4
4.4
Electrical Characteristics
h
FE
Min
2000
2000
600
2000
2000
V
CE
(V)
2
2
2
−5
±2
I
C
(A)
1.5
1
1
−3
±1
V
CE
(sat)
(V) Max
1.5
1.5
0.5
−1.5
±1.8
I
C
(A)
1.5
1
1.5
−3
±2
I
B
(mA)
3
1
15
−6
±4
MP4301
MP4303
MP4304
MP4305
MP6301
NPN x 2, NPN x 2
NPN x 2, NPN x 2
NPN x 2, NPN x 2
PNP x 2, PNP x 2
NPN x 3, PNP x 3
Darlington
Darlington
Single
Darlington
Darlington
: Built-in diode for absorbing flyback voltage
The above products may be available in a version in which the outer leads of the part are Lead(Pb)-Free-finished.
Please contact your sales representative for product-by-product details regarding RoHS compatibility or for any other concerns.
Power MOSFET Modules (Full-Mold Types S-10 and S-12)
Absolute Maximum Ratings
Part Number
Circuit Configuration
V
DSS
(V)
−60
100
60
−60
±60
60
100
100
±60
Electrical Characteristics
R
DS(ON)
(Ω) Max
0.3
0.35
0.16
0.19
0.16/0.19
0.16
0.35
0.23
0.16/0.19
I
D
(A)
−5
3
5
−5
±5
5
3
5
±5
P
T
(Ta
=
25°C)
(W)
4
4
4
4
4
4.4
4.4
4.4
4.4
I
D
(A)
−2.5
2
2.5
−2.5
2.5/−2.5
2.5
2
2.5
2.5/−2.5
V
GS
(V)
−10
10
10
−10
10/−10
10
10
10
10/−10
Package
Remarks
MP4208
MP4209
MP4210
MP4211
MP4212
MP4410
MP4411
MP4412
MP6404
P-ch x 4
N-ch x 2, N-ch x 2
N-ch x 2, N-ch x 2
P-ch x 2, P-ch x 2
N-ch x 2, P-ch x 2
N-ch x 2, N-ch x 2
N-ch x 2, N-ch x 2
N-ch x 2, N-ch x 2
N-ch x 3, P-ch x 3
SIP10 (S-10)
SIP10 (S-10)
SIP10 (S-10)
SIP10 (S-10)
SIP10 (S-10)
SIP12 (S-12)
SIP12 (S-12)
SIP12 (S-12)
SIP12 (S-12)
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
4-V drive possible
: Built-in diode for absorbing flyback voltage
The above products may be available in a version in which the outer leads of the part are Lead(Pb)-Free-finished.
Please contact your sales representative for product-by-product details regarding RoHS compatibility or for any other concerns.
241
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