(Surface-Mount Type) (Electret Condense Microphone)
Package
TESM2
Characteristics
V
GDS
(V)
Max
I
G
(mA)
Max
I
DSS
Rank
(µA)
⎪Yfs⎪(mS)
Min
1.4
TESM3
1.4
VESM2
1.2
CST3
0.6
Ciss (pF)
Typ.
1.2
0.8
1.2
0.8
1.2
0.8
1.0
0.54
0.395
0.3 (max)
0.38
0.35
(mm)
A
=
80 to 200
High gain
Low THD
High gain
Low THD
Low Noise
Small Ciss
High gain
Low THD
Small Ciss
High gain
Small Ciss
−20
10
BK
=
150 to 350
B
=
170 to 300
C
=
270 to 480
A
=
80 to 200
−20
10
B
=
170 to 300
A
=
140 to 240
10
B
=
210 to 350
A
=
140 to 240
B
=
210 to 350
C
=
320 to 500
0.9
3.5
0.55
3.6
0.7
5.5
(mm)
(mm)
(mm)
2SK3376TT
2SK3376TK
2SK3376TV
2SK3376CT
2SK3582TT
2SK3582TK
2SK3582TV
2SK3582CT
−20
2SK3857TT
2SK3857TK
2SK3857TV
2SK3857CT
−20
10
1.35
4.0
2SK4059TK
*
2SK4059TV
*
2SK4059CT
*
*:
New product
Junction FETs (Dual)
(Surface-Mount Type)
Package
SMV
2.9
USV
2.0
Classification
V
GDS
(V)
I
G
(mA)
I
DSS
(mA)
2.8
1.6
⎪Yfs⎪(mS)
Min
Internal Connections
1.25
2.1
Nch x 2
(mm)
Pch x 2
Nch x 2
(mm)
Pch x 2
General-purpose
−50
10
1.2 to 14
4
2SK2145
2SK3320
Q1
Q2
206
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