ESV Package
1.6
ES6 Package
1.6
UFV Package
2.0
Part Number
USV Package
2.0
Ratings
SMV Package
2.9
SM6 Package
2.9
2.1
1.7
1.25
1.6
1.2
1.6
1.2
2.1
Internal Connections
2.8
1.6
2.8
1.6
Component
Devices
Breakdown
Current
Voltage
Features
(V)
(mm)
NPN(BRT)
+
Nch
Q1
Q1
Q2
(mA)
(mm)
(mm)
(mm)
(mm)
(mm)
NPN
(Internal resisters),
100
R1
=
47 kΩ,
R2
=
47 kΩ
2.5-V gate drive
100 (Vth
=
1.5 V max),
Ron
=
4
Ω
typ.
NPN Low V
CE(SAT)
,
400 suitable for power
supply switches
50
2.5-V gate drive
(Vth
=
1.3 V max),
Ron
=
4
Ω
typ.
General-purpose
NPN transistor
RN1104F V
CEO
50
I
C
⎯
HN7G09FE
⎯
⎯
⎯
⎯
Q2 SSM3K15FS V
DS
30
I
D
NPN
+
Nch
Q1 2SC5376F V
CEO
12
Q1
Q2
I
C
⎯
HN7G10FE
⎯
⎯
⎯
⎯
Q2 SSM3K03FE V
DS
20
I
D
Common emitter
NPN
+
NPN(BRT)
Q1
Q2
Q1
2SC4116
V
CEO
50
I
C
150
⎯
⎯
⎯
⎯
HN4G01J
⎯
Q2
RN1303
V
CEO
50
I
C
NPN
(Internal resisters),
100
R1
=
22 kΩ,
R2
=
22 kΩ
100
Standard high-speed
switching
General-purpose
NPN transistor
Standard high-speed
switching
Standard high-speed
switching
General-purpose
NPN transistor
High breakdown
voltage PNP
SBD
+
NPN
Q1
Q1
Q2
1SS352
V
R
80
I
O
⎯
⎯
⎯
HN2E06JU
*
⎯
⎯
Q2
2SC4116
V
CEO
50
I
C
150
Independent
small-signal diode
+
NPN
Q1
Q2
HN2E01F
⎯
⎯
⎯
⎯
⎯
Q1
Q2
Q1
1SS352
2SC4666
1SS352
V
R
80
I
O
I
C
I
O
100
V
CEO
50
V
R
80
150 High-h
FE
-type NPN
100
HN2E02F
Q2
2SC4116
V
CEO
50
I
C
150
Independent
PNP
+
small-signal
diode
Q1
2SA1587
V
CEO
−120
I
C
−100
⎯
Q1
Q2
⎯
⎯
⎯
⎯
HN2E04F
Q2
1SS352
V
R
80
I
O
100
Standard high-speed
switching
Independent
BRT (PNP)
+
small-signal diode
Q1
RN2304
V
CEO
−50
I
C
⎯
Q1
Q2
⎯
⎯
⎯
HN2E05J
⎯
Q2
1SS352
V
R
80
I
O
PNP
(Internal resisters),
−100
R1
=
47 kΩ,
R2
=
47 kΩ
Standard high-speed
switching
100
*:
New product
213