SI-3000ZD Series
sExternal
Dimensions (TO263-5)
Case temperature
measurement point
(0.40)
±0.2
(Unit : mm)
±0.2
10.0
(8.0)
4.5
3-R0.3
±0.2
1.2
(15°)
(4.4)
1.3
+0.10
–0.05
(1.75)
(4.6)
(6.8)
±0.2
9.2±
9.2
±0.2
φ
1.5 Dp:
±0.2
(3°)
(2×R0.45)
(3°)
±0.1
0.10
(3°)
2.4
(R0.3)
±0.3
±0.2
±0.2
2.0
15.30
±0.15
0.88
±0.10
(R0.3)
0~6
°
±0.1
(0.5)
(1.7
±0.25
)
1
2
3
4
9.9
±0.2
0.8
±0.25
)
(1.7
5
(3°)
±0.1
(1.7
±0.25
)
0.8
±0.25
(1.7
)
Pin Assignment
q
V
C
w
V
IN
e
GND (Common to the rear side of product)
r
V
O
t
Sense
(ADJ for SI-3011ZD)
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 1.48g
±0.3
15.3
±0.3
(0.75)
4.9
(3°)
2-R0.3
0.1
10.0
±0.02
sBlock
Diagram
SI-3011ZD
V
IN
+
2.54
4.9
±0.2
2
4
V
O
R3
*
C
IN
REF
+
+
R1
+
Drive
TSD
OCP
AMP1
5
ADJ
C
O
R2
C
IN
: Input capacitor (Approx. 10
µ
F)
C
O
: Output capacitor (47
µ
F or larger)
The output voltage may oscillate if a low ESR type capacitor
(such as a ceramic capacitor) is used for the output capacitor in
the SI-3000ZD Series.
V
C
ON/
OFF
1
-
-
+
SI-3025ZD, SI-3033ZD
V
IN
+
2
C
IN
REF
+
+
TSD
OCP
AMP1
C
O
V
C
ON/
OFF
1
-
-
+
3
GND
sReference
Data
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
Junction to Ambient Temperature
Thermal Resistance
θ
j-a (°C/W)
50
When Using Glass-Epoxy Board of 40
×
40 mm
45
40
35
30
0
200
400
600
800
1000
1200
1400
1600
1800
Copper Laminate Area (mm
2
)
+
Drive
-
-
3
GND
4
5
V
O
SENSE
R1, R2: Output voltage setting resistors
The output voltage can be set by connecting R1 and R2 as shown
at left.
The recommended value for R2 is 10kΩ or 11kΩ.
R1= (V
O
–V
ADJ
) / (V
ADJ
/R2)
*: Insert R3 in case of setting V
O
to V
O
1.8V. The recommended
value for R3 is 10kΩ.
• A higher heat radiation effect can be achieved by enlarging the copper laminate
area connected to the inner frame to which a monolithic IC is mounted.
• Obtaining the junction temperature
Measure GND terminal temperature T
C
with a thermocouple, etc. Then substitute
this value in the following formula to obtain the junction temperature.
T
j
=P
D
×
θ
j–C+
T
C
P
D
= (V
IN–
V
O
)•I
OUT
ICs
25
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