SANKEN ELECTRIC CO.,LTD.

CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. • Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. • The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • Anti radioactive ray design is not considered for the products listed herein. • This publication shall not be reproduced in whole or in part without prior written approval from Sanken. • Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.

Contents Examples of Use of Typical Products by Application .............. 2 1 ICs 1-1. Regulator ICs Application Note ................................................................................ 7 Dropper Type Regulator ICs ......................................................... 8 Dropper Type System Regulator ICs ...................................... 16 Switching Type Regulator ICs ................................................... 22 1-2. Power Switch ICs High-side Power Switch ICs ...................................................... 24 Low-side Switch ICs ...................................................... 50 1-3. Motor Driver ICs Stepper-motor Driver ICs ............................................................ 56 DC Motor Driver ICs ...................................................................... 60 1-4. HID Lamp Driver ICs ..................................................................... 64 1-5. Custom ICs ....................................................................................... 76 2 Discretes 2-1. Transistors 2-1-1. Transistors ............................................................................ 80 2-1-2. Transistor Arrays ............................................................... 96 2-2. MOS FETs 2-2-1. MOS FETs ......................................................................... 108 2-2-2. MOS FET Arrays ............................................................. 117 2-3. Thyristors 2-3-1. Reverse Conducting Thyristors .............................. 125 2-4. Diodes 2-4-1. Alternator Diodes ........................................................... 127 2-4-2. High-voltage Diodes for Igniter ................................ 128 2-4-3. Power Zener Diodes ..................................................... 129 2-4-4. General-purpose Diodes ............................................ 130 3 LEDs 3-1. Uni-Color LED Lamps ................................................................ 134 3-2. Bi-Color LED Lamps .................................................................. 137 3-3. Surface Mount LEDs .................................................................. 138 3-4. Infrared LEDs .................................................................................. 140 3-5. Ultraviolet LEDs ............................................................................ 141 3-6. Multi-chip Modules .................................................................... 142 Part Number Index in Alphanumeric Order ......................................... 147 1

Examples of Use of Typical Products by Application Throttle System •DC Motor Driver ICs (p.60 and after)in a single package. Control IC and full bridge power stage Surface-mounting type series are also available. SI-5300 / SPF7301 •Motor Driver Transistor Arraysa(p.99) package. H-bridge of NPN x 2 and PNP x 2 in single With integrated back emf. clamp diode. Alternators SLA8004 •Diodes (p.127) fit type as well as Zener type is available. •Motor driver back emf. clamp diode. and after) With integrated power transistors (p.68 Solder and press 2SA1568 / 2SC4065 SG-9 / SG-10 / SG-14 •Regulator ICs our sales reps.) Custom-made (contact Fuel Injectors •Injector transistors (p.84are available in discretes and arrays in Transistors and MOS FETs and after) various packages. 2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103 Headlamps •HID lamp driver ICsIC(p.64 and after) power stage in a High-voltage controller and 4-circuit single package. Direct drive from CPU. SLA2402M / SLA2403M / SMA2409M •Thyristorstofor HID lamp ignition (p.125 and after) Best suited C-discharge SW element on high-voltage primary side of an igniter. Integrates a reverse direction diode. Ignition System High di/dt resistance TFC561D / TFC562D •High-voltage diodes 0.5 to 15kV (p.128) for ignition •MOS FET N-ch MOS FETs of 450V/7Alamps (p.122) 4 circuits of arrays for driving HID in a single package. Withstand voltage range: SHV-01JN / SHV-05J / SHV-06JN SMA5113 •2SD2141 / MN638S Ignition transistors (p.89 and after) •2-phoutput saturation voltage, integrated AFS (p.58diode,after) stepper-motor driver ICs for and Low surface-mount. recovery •Ignition ICs (contact our sales reps.) Custom-made SPF7211 2

Room Lamp •Multi-chip LED modules (p.142) Car Navigation and Audio Power Steering •Various LEDs (p.133) •Motor packages integrating (p.108 and after) Various driver MOS FETs low ON resistors, bidirectional Zener diodes, etc. 2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851 Tail Lamps •Power LED Custom-made (contact our sales reps.) O2 sensor heater •Heater resistor and integral gate protection Low ON driver MOS FETs (p.115) diode. FKV460S Transmission ABS and VDC •AT solenoid drivers (high-side power2-switch ICs) (p.26 and after) Integral diagnostic function, surface-mount, and 3-circuit types and other •Solenoid/motor driver MOStoFETs (p.108 and after) Various packages from discretes arrays. diverse models. 2SK3710 / FKV660S / SLA5027 / SDK08 SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M •Solenoid/motor driver ICs (p.54) voltage monitor. •Integral current detection resistor, current monitor output, surface-mount and AT linear solenoid driver (high-side power switch ICs) (p.46 and after) Surface-mount 4-circuit type with output SPF5012 2-circuit types are also available. SPF5017 / SPF5018 3

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1 ICs 1-1. Regulator ICs 1-3. Motor Driver ICs .............................................. ......................... Application Note 7 Stepper-motor Driver ICs 56 .................... ................................... Dropper Type Regulator ICs 8 SLA4708M (50V, 1.5A) 56 SI-3001S (5V/1A, With Output ON/OFF Control) ... 8 SPF7211 (40V, 0.8A) ..................................... 58 SI-3003S (5V/0.8A, 3-terminal) ....................... 10 DC Motor Driver ICs .................................... 60 ..................................... SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12 SI-5300 (40V, 5A) 60 ..................................... SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14 SPF7301 (36V, 7A) 62 .. Dropper Type System Regulator ICs 16 SI-3322S (5V, Surface-mount) ........................ 16 1-4. HID Lamp Driver ICs SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18 SLA2402M (500V, 15A) .................................. 64 SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20 SLA2403M (500V, 7A) .................................... 68 ............... Switching Type Regulator ICs 22 SMA2409M (500V, 7A) ................................... 72 ............................................ SI-3201S (5V/3A) 22 1-5. Custom ICs ..................................... 76 1-2. Power Switch ICs ................... High-side Power Switch ICs 24 SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24 SI-5151S (With Diagnostic Function) .............. 26 SI-5152S (With Diagnostic Function) .............. 28 SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30 SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32 SI-5155S (With Diagnostic Function) .............. 34 SLA2501M (With Diagnostic Function, 3-circuits) 36 SLA2502M (With Diagnostic Function, 4-circuits) 38 SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40 SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42 SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44 SPF5017 (Surface-mount 2-circuit, current monitor output function) 46 SPF5018 (Surface-mount, current monitor output function) 48 ................................... Low-side Switch ICs 50 .......... SPF5002A (Surface-mount 4-circuits) 50 SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52 SPF5012 (Surface-mount 4-circuits with Output Monitor) 54 5

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Application Note for Regulator ICs ■ Temperature and Reliability Reliability of an IC is generally heavily dependent on generally used. Moreover, the heat dissipation operating temperature. Heat radiation must be fully capacity of a heatsink is heavily dependent on how considered, and an ample margin should be given it is mounted. It is therefore important and to the radiating area in designing heatsinks. When recommended to measure the heatsink and case mounting ICs on heatsinks, always apply silicone temperature in actual operating environments. grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral ■ Setting DC Input Voltage components, is also closely related to temperature. Observe the following precautions when setting the A high operating temperature may reduce the DC input voltage: service life. Exceeding the allowable temperature • VIN (min) must be at least the set output voltage may cause coils to be burned or capacitors to be plus dropout voltage for the dropper type. It must damaged. Make sure that output smoothing coils be at least the recommended lowest input and input/output capacitors do not exceed their voltage for the switching type. allowable temperature limit in operation. We • V IN (max) must not exceed the DC input voltage of recommend, in particular, to provide an ample the electrical characteristics. margin for the ratings of coils to minimize heat generation. ■ Screw Torque ■ Power Dissipation (PD) Screw torque should be between 0.588 to 0.686 [N • m] (6.0 to 7.0 [kgf • cm]). 1. Dropper Type PD = IO • [VIN (mean) - VO] ■ Recommended silicone grease 2. Switching Type V Volatile type silicone grease may produce cracks PD = VO • I O ( 100 - 1) - VF • IO (1 - O ) after elapse of long term, resulting in reducing heat VIN Efficiency depends on input/output conditions. radiation effect. Silicone grease with low consistency (hard grease) Refer to the efficiency characteristics. may cause cracks in the mold resin when screwing VO : Output voltage : Efficiency the product to a heatsink. VIN : Input voltage VF : Diode forward voltage IO : Output current Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. ■ Heatsink Design YG6260 GE Toshiba Silicones Co., Ltd. The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the SC102 Dow Corning Toray Silicone Co., Ltd. absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum ■ Others power dissipation PD (max) and the maximum This product may not be connected in parallel. ambient temperature Ta (max). To facilitate heatsink The switching type may not be used for current design, the relationship between these two boosting and stepping up voltage. parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation P D (max). 3. Identify the intersection on the Ta-PD charac- teristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is 7

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S Features External Dimensions (unit: mm) ● Output current of 1.0A 3.2 ±0.2 4.2 ±0.2 ● 5-terminal type <output on/off control, variable output voltage (rise only)> 10.0±0.2 2.8 ±0.2 0.5 ● Voltage accuracy of ±2% ● Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A 4.0±0.2 7.9±0.2 ● Built-in overcurrent, overvoltage and thermal protection circuits ● Withstands external electromagnetic noises 16.9±0.3 ● TO220 equivalent full-mold package (17.9) a 2.6 ±0.1 b (2.0) Absolute Maximum Ratings 5.0 ±0.6 (Ta = 25ºC) 0.95±0.15 +0.2 Parameter Symbol Ratings Unit Conditions 0.85 – 0.1 (4.6) (8.0) DC Input Voltage VIN 35 V +0.2 –0.1 0.45 Output Control Terminal Voltage VC VIN V P1.7±0.7• 4=6.8±0.7 3.9 ±0.7 (4.3) Output Current IO 1.0 * 1 A 8.2 ±0.7 PD1 18 W With infinite heatsink Power Dissipation 1. GND PD2 1.5 W Stand-alone without heatsink 2. VC (on/off) a: Part No. 1 2 3 4 5 3. Vo b: Lot No. Junction Temperature Tj – 40 to +125 ºC 4. Vosense 5. VIN Operating Temperature TOP – 40 to +100 ºC Storage Temperature Tstg – 40 to +125 ºC (Forming No. 1101) Junction to Case Thermal j-c 5.5 ºC/W Resistance Junction to Ambient-Air Thermal j-a 66.7 ºC/W Stand-alone without heatsink Resistance Equivalent Circuit Diagram Tr1 5 3 VIN VO R1 MIC 4 Electrical Characteristics VO sense ( Tj= 25ºC, VIN =14V unless otherwise specified) R3 a Ratings Parameter Symbol Unit Conditions min typ max e f d R4 Input Voltage VIN 6 *2 30 *1 V b 2 Vc c g Output Voltage VO 4.90 5.00 5.10 V VIN =12 to 16V, IO = 0.4A (on/off) R2 0.5 V IO 0.4A Dropout Voltage VDIF 1.0 V IO 1.0A 1 a : Pre-regulator e : Drive circuit Line Regulation ∆VO LINE 30 mV IO =0.4A, VIN = 6 to 16V GND b : Output ON/OFF control f : Error amplifier ∆VO LOAD 100 mV IO = 0 to 0.4A c : Thermal protection g : Reference voltage Load Regulation d : Over-input and overcurrent protection Output Voltage Temperature ∆VO /∆T ±0.5 mV/ºC IO =5mA, Ta = –10 to +100ºC Coefficient Ripple Rejection RREJ 54 dB f =100 to 120Hz Standard Circuit Diagram Quiescent Circuit Current Iq 3 10 mA IO = 0A Overcurrent Protection Starting D1 3 I S1 1.2 * A Current 4 Output ON VC, IH 2.0 * V 5 3 Vc Terminal Control Voltage OPEN SI-3001S Output OFF VC, IL 0.8 V 2 4 DC input + + DC output Output ON I C, IH 20 µA VC = 2.7V C2 1 CO VIN C1 VO Control Current Output OFF I C, IL – 0.3 mA VC = 0.4V Notes: *1. Since PD (max) = ( VIN – VO) • IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Co : Output capacitor (47 to 100µF, 50V) Ta -PD curve to compute the corresponding values. C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF). *2. Refer to the dropout voltage. These are required for inductive input lines or long wiring. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%. Tantalum capacitors are recommended for C1 and Co, *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, especially at low temperatures. LS-TTL direct driving is also possible. D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) 8

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S Electrical Characteristics ■ Io vs VDIF Characteristicsc ■ Line Regulation ■ Load Regulation 0.5 5.1 5.1 IO = V IN = 0.4 Dropout voltage VDIF (V) 0 (A) 30 ( V) Output voltage VO (V) Output voltage VO (V) 0.4 (A) 12 to 16 ( V) 0.3 1.0 (A) 5.5 ( V) 5.0 5.0 0.2 0.1 4.9 4.9 0 0 0 0 0.5 1.0 0 5 10 15 20 25 30 0 0.5 1.0 Output current IO (A) Input voltage VIN (V) Output current IO (A) ■ Output Voltage Temperature Characteristics ■ Rise Characteristics ■ Quiescent Circuit Current 5.1 7 15 Io = 0 (A) 6 Quiescent current lq (mA) Load resistance Output voltage VO (V) VIN = Output voltage VO (V) 5 30(V) 10 16(V) 12(V) 4 5.0 3 14(V) VIN — IOUT condition 12 (Ω) 5 5.5(V) 5.5 (V) / 1.0 (A) 2 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 5 (Ω) 30 (V) / 0 (A) 1 4.9 0 0 0 --50 0 50 100 150 0 2 4 6 8 10 0 2 4 6 8 10 Ambient temperature Ta (ºC) Input voltage VIN (V) Input voltage VIN (V) ■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics ■ Thermal Protection Characteristics 6 6 6 I o = 0 (A) Io = 0 (A) VIN = 14 (V) VIN = 6 (V) 5 5 5 10 (V) Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) 4 4 30 (V) 4 3 3 3 5.5 (V) 2 2 20 (V) 2 14 (V) 1 1 1 ON OFF 0 0 0 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 125 130 135 140 145 150 155 Output ON/OFF control voltage VC (V) Output current IO (A) Ambient temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection ■ Overvoltage Protection Characteristics ■ Ta —PD Characteristics against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for 6 20 short-circuiting over an extended period of time. Use G746 silicone grease With infinite heatsink (Shin-Etsu Chemical) and aluminum heatsink. 5 Power Dissipation PD (W) 15 Output voltage VO (V) 4 200•200•2mm (2.3ºC/W) 3 10 100•100•2mm (5.2ºC/W) 75•75•2mm (7.6ºC/W) 2 5 1 Without heatsink 0 0 10 20 30 40 50 --30 –20 0 20 40 60 80 100 Input voltage VIN (V) Operating temperature Ta (ºC) 9

Dropper Type Regulator ICs [3-terminal] SI-3003S Features External Dimensions (unit: mm) ● 3-terminal IC regulator with 0.8A output current 4.2 ±0.2 ● Voltage accuracy of ±2% 3.2 ±0.2 10 ±0.2 2.8 ±0.2 ● Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A 4±0.2 ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits 0.5 7.9 ±0.2 ● TO220 equivalent full-mold package 16.9 ±0.3 a 2 max Absolute Maximum Ratings b 2.6 ±0.15 (Ta =25ºC) Parameter Symbol Ratings Unit Conditions DC input voltage VIN 35 V 0.94 ±0.15 (13.5) +0.2 2 0.85 –0.1 Output current IO 0.8 * A PD1 22 W With infinite heatsink Power Dissipation PD2 1.8 W Stand-alone without heatsink +0.2 4•P1.7 ±0.15 = 6.8 ±0.15 0.45 –0.1 (root dimensions) Junction temperature Tj –40 to +150 ºC Operating temperature TOP –40 to +100 ºC Terminal connections 1. VIN Storage temperature Tstg –40 to +150 ºC 2. (NC) a: Part No. 1 2 3 4 5 3. GND b: Lot No. Junction to case thermal resistance j-c 5.5 ºC/W 4. (NC) Junction to ambient-air thermal 5. VO j-a 66.7 ºC/W Stand-alone without heatsink resistance (Forming No. 1115) Electrical Characteristics Equivalent Circuit Diagram (Tj=25ºC, VIN =14V, IO =0.5A unless otherwise specified) Ratings Parameter Symbol Unit Conditions min typ max Input voltage VIN 6*2 30 * 1 V VIN VO Output voltage VO 4.90 5.00 5.10 V 1 5 0.5 V IO 0.5A OCP DRIVE Dropout voltage VDIF 1.0 V IO 0.8A TSD DET ERR Line regulation VO LINE 30 mV VIN =8 to 16V Load regulation VO LOAD 100 mV IO =0 to 0.5A REF Ripple rejection RREJ 54 dB f=100 to 120Hz Quiescent circuit current Iq 3 10 mA IO =0A 3 Overcurrent protection starting 3 GND IS1 0.9 * A current Notes: *1. Since P D (max) = (VIN – VO) • IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta —P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to –5%. Standard Circuit Diagram D1 *2 1 5 SI-3003S 2 4 DC input + *1 N.C 3 N.C + DC output C2 CO VIN C1 VO Co : Output capacitor (47 to 100µF, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) 10

Dropper Type Regulator ICs [3-terminal] SI-3003S Electrical Characteristics ■ Io vs VDIF Characteristics ■ Line Regulation ■ Load Regulation 0.5 5.1 5.1 0.4 Dropout voltage VDIF (V) Output voltage VO (V) Output voltage VO (V) 5.0 5.0 0.3 IO =0A IO=0.5, 0.8A VIN =35V 0.2 =0.2A =0.2A =25V =0.5A =0A =14V =0.8A =6V 4.9 4.9 0.1 0 0 0 0 0.2 0.4 0.6 0.8 0 5 10 15 20 25 30 35 0 0.2 0.4 0.6 0.8 Output current IO (A) Input voltage VIN (V) Output current IO (A) ■ Output Voltage Temperature Characteristics ■ Rise Characteristics ■ Circuit Current 5.1 6 250 IO =0A 5 =0.5A =0.8A 200 Ground current lg (mA) Output voltage VO (V) Output voltage VO (V) VIN / IO: 4 30V / 0A 14V / 0.5A 150 6V / 0.8A 5.0 3 IO=0.8A 100 =0.5A 2 =0.2A =0A 50 1 4.9 0 0 –50 0 50 100 150 0 2 4 6 8 10 0 5 10 15 20 25 30 35 Ambient temperature Ta (ºC) Input voltage VIN (V) Input voltage VIN (V) ■ Overcurrent Protection Characteristics ■ Thermal Protection Characteristics ■ Ta —PD Characteristics 6 6 25 VIN =6V With silicone grease With infinite heatsink IO=5mA Heatsink: aluminum 5 5 20 Power Dissipation PD (W) 200 • 200 • 2mm Output voltage VO (V) Output voltage VO (V) 4 4 (2.3ºC/W) 15 100 • 100 • 2mm 3 3 (5.2ºC/W) 10 2 VIN =6V 2 75 • 75 • 2mm 14V (7.6ºC/W) 5 1 35V 1 Without heatsink 25V 0 0 0 0 0.5 1.0 1.5 2.0 2.5 120 140 160 180 200 –40 0 40 80 100 Output current IO (A) Ambient temperature Ta (ºC) Operating temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 11

Dropper Type Regulator ICs [2-output] SI-3101S Features External Dimensions (unit: mm) ● Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> 3.2 ±0.2 4.2 ±0.2 ● Main output can be externally turned ON/OFF (with ignition switch, etc.) 10.0 ±0.2 2.8 ±0.2 0.5 <most suitable as memory backup power supply> 4.0 ±0.2 ● Low standby current ( 0.8mA) 7.9 ±0.2 ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits 16.9 ±0.3 ● TO220 equivalent 5-terminal full-mold package a (17.9) 2.6 ±0.1 b (2.0) 5.0 ±0.6 0.95 ±0.15 Absolute Maximum Ratings (Ta=25ºC) +0.2 0.85 –0.1 (4.6) Parameter Symbol Ratings Unit Conditions (8.0) +0.2 –0.1 0.45 DC input voltage VIN 40 V P1.7 ±0.7 • 4 = 6.8±0.7 3.9 (4.3) Battery reverse connection VINB –13 * 6 V One minute 8.2 ±0.7 Output control terminal voltage VC VIN V 1 CH1 IO1 0.07 * A 1. VIN Output current 2. VC (on/off) a: Part No. CH2 IO2 0.4 * 1 A 1 2 3 4 5 3. GND b: Lot No. 4. VO1 PD1 18 W With infinite heatsink 5. VO2 Power Dissipation PD2 1.5 W Stand-alone without heatsink (Forming No. 1101) Junction Temperature Tj –40 to +125 ºC Operating temperature TOP –40 to +115 ºC Storage temperature Tstg –40 to +125 ºC Junction to case thermal resistance j-c 5.5 ºC/W Equivalent Circuit Diagram Junction to ambient-air thermal j-a 66.7 ºC/W Stand-alone without heatsink VO1 resistance VIN 1 4 OCP DRIVE TSD DET ERR Electrical Characteristics (Tj=25ºC, VIN =14V unless otherwise specified) REF 5 Ratings Parameter Symbol Unit Conditions VO2 min typ max OCP Input voltage VIN 6 *2 35 * 1 V OVP DRIVE DET CH1 VO1 4.80 5.00 5.20 V IO =0.05A ERR Output voltage CH2 VO2 4.80 5.00 5.20 V IO =0.3A 2 3 VC CONT GND Channel-channel voltage difference IO1 =0 to 0.05A VO –0.1 0.1 V (VO1 —VO2) IO2 =0 to 0.3A CH1 VDIF1 1.0 V IO1 0.05A Dropout voltage CH2 VDIF2 1.0 V IO2 0.4A CH1 VO LINE1 10 30 mV VIN =6 to 18V, IO =0.05A Line regulation Standard Circuit Diagram CH2 VO LINE2 10 30 mV VIN =6 to 18V, IO =0.3A D3 CH1 VO LOAD1 30 70 mV IO1=0 to 0.05A Load regulation D2 VO LOAD2 40 70 mV IO2 =0 to 0.3A VIN VO2 CH2 1 5 CH1 RREJ1 54 dB f =100 to 120Hz D1 SI- 3101S Ripple rejection 2 3 4 CH2 RREJ2 54 dB f =100 to 120Hz VC VO1 + GND + + Quiescent circuit current Iq 0.8 mA IO1=0A, VC =0V CIN CO1 CO2 3 Overcurrent protection CH1 I (S1) 1 0.1 * A starting current CH2 I (S1) 2 0.5 * 3 A Output ON VCH 4.2 4.5 4.8 V CO1 : Output capacitor (47 to 100µF, 50V) Output control voltage Output OFF VCL 3.2 3.5 3.8 V CO2 : Output capacitor (47 to 100µF, 50V) *1 CIN : Input capacitors (approx. 47µF). Output ON I CH 100 µA VC =4.8V Output control current Tantalum capacitors are recommended for CO1, CO2 Output OFF I CL –100 µA VC =3.2V and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Overvoltage protection starting VOVP 35 * 4 V Required as protection against reverse biasing voltage between input and output. Thermal protection starting (Recommended diode: Sanken EU2Z.) TTSD 130 * 5 ºC temperature Notes: *1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open. 12

Dropper Type Regulator ICs [2-output] SI-3101S Electrical Characteristics ■ Line Regulation (1) ■ Line Regulation (2) ■ Load Regulation (1) 5.1 5.1 5.1 VC = 5 (V) VC = 5 (V) VC = 5 (V) IO2 = 0 (A) I O1 = 0 (A) I O2 = 0 (A) I O1 = I O2 = V IN = Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) 0mA 0A 6V 14V 0.3A 22V 50mA 5.0 5.0 5.0 70mA 0.5A 4.9 4.9 4.9 0 0 0 0 5 10 15 20 25 0 5 10 15 20 25 0 10 20 30 40 50 60 70 Input voltage V IN (V) Input voltage V IN (V) Output current IO (mA) ■ Load Regulation (2) ■ Rise Characteristics ■ Quiescent Circuit Current 5.1 6 VC = 5 (V) 10 I O1 = 0 (A) I O1 = 0 (A) 5 Vc = 0 (V) Quiescent current lq (mA) V IN = Output voltage VO (V) Output voltage VO (V) 6V,14V Load resistor 4 100Ω 5.0 22V 3 ∞ 5 2 71.4Ω 1 4.9 0 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 0 5 10 15 20 Output current IO (A) Input voltage VIN (V) Input voltage VIN (V) ■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics (1) ■ Overcurrent Protection Characteristics (2) 6 6 6 5 5 5 V IN = 4.5V Output voltage VO2 (V) Output voltage VO1 (V) Output voltage VO2 (V) 6V 4 4 14V 4 V IN = 22V VIN = 14V, 22V 6V IO2 = 0 (A) 6V 3 I O1 = 0 (A) 3 VC = 5 (V) 3 14V 4.5V VC = 5 (V) 22V 2 2 2 OFF ON 1 1 1 0 0 0 0 1 2 3 4 5 6 0 0.05 0.1 0.15 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Output ON/OFF control voltage VC (V) Output current IO (A) Output current IO (A) ■ Thermal Protection Characteristics ■ Overvoltage Protection Characteristics ■ Ta—PD Characteristics 6 6 20 VIN = 6 (V) With infinite heatsink With silicone grease G746 (Shin-Etsu Chemical) I O1 = I O2 = 5 (mA) Heatsink: aluminum 5 5 Power Dissipation PD (W) 15 Output voltage VO1 (V) Output voltage VO (V) VO1 4 4 200 • 200 • 2mm (2.3ºC/W) IO1 = I O2 = 5 (mA) VO2 3 VC = 5 (V) 10 100 • 100 • 2mm (5.2ºC/W) 3 75 • 75 • 2mm (7.6ºC/W) 2 2 5 1 1 Without heatsink 0 0 0 0 130 140 150 160 10 20 30 40 --30 --20 0 20 40 60 80 100 115 Ambient temperature Ta (ºC) Input voltage VIN (V) Operating temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 13

Dropper Type Regulator ICs [2-output] SI-3102S Features External Dimensions (unit: mm) ● Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> ● Main output can be externally turned ON/OFF (with ignition switch, etc.) 3.2 ±0.2 10.0 ±0.2 4.2 ±0.2 2.8 ±0.2 0.5 <most suitable as memory backup power supply> ● Low standby current ( 0.8mA) 4.0 ±0.2 7.9 ±0.2 ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits 16.9 ±0.3 ● TO220 equivalent 5-terminal full-mold miniature package (17.9) a 2.6 ±0.1 b (2.0) 5.0 ±0.6 Absolute Maximum Ratings (Ta=25ºC) 0.95 ±0.15 +0.2 Parameter Symbol Ratings Unit Conditions 0.85 –0.1 (4.6) (8.0) DC input voltage VIN 35 V +0.2 –0.1 0.45 Battery reverse connection VINB –13 * 6 V One minute P1.7 ±0.7 • 4 = 6.8 ±0.7 3.9 ±0.7 (4.3) Output control terminal voltage VC VIN V 8.2 ±0.7 CH1 IO1 0.04 * 1 A Output current 1. VIN a: Part No. CH2 IO2 0.1 * 1 A 2. VC (on/off) b: Lot No. 1 2 3 4 5 3. GND PD1 22 W With infinite heatsink 4. VO1 Power Dissipation 5. VO2 PD2 1.8 W Stand-alone without heatsink Junction temperature Tj –40 to +150 ºC (Forming No. 1101) Operating temperature TOP –40 to +105 ºC Storage temperature Tstg –40 to +150 ºC Junction to case thermal resistance j-c 5.5 ºC/W Equivalent Circuit Diagram Junction to ambient-air thermal j-a 66.7 ºC/W Stand-alone without heatsink resistance VIN VO1 1 4 OCP DRIVE Electrical Characteristics (Tj = 25ºC, VIN = 14V unless otherwise specified) TSD DET ERR Ratings Parameter Symbol Unit Conditions min typ max REF 5 Input voltage VIN 6 *2 30 * 1 V VO2 CH1 VO1 4.80 5.00 5.20 V IO = 0.04A OCP Output voltage OVP DRIVE CH2 VO2 4.80 5.00 5.20 V IO = 0.1A DET ERR Channel-channel voltage difference IO1 =0 to 0.04A VO –0.1 0.1 V (VO1 —VO2) IO2 =0 to 0.1A 2 3 VC CONT GND CH1 VDIF1 1.0 V IO1 0.04A Dropout voltage CH2 VDIF2 1.0 V IO2 0.1A CH1 VO LINE1 10 50 mV VIN = 6 to 30V, IO = 0.04A Line regulation CH2 VO LINE2 10 50 mV VIN = 6 to 30V, IO = 0.1A CH1 VO LOAD1 30 70 mV IO1 = 0 to 0.04A Load regulation CH2 VO LOAD2 40 70 mV IO2 = 0 to 0.1A CH1 RREJ1 54 dB f = 100 to 120Hz Ripple rejection CH2 RREJ2 54 dB f = 100 to 120Hz Standard Circuit Diagram Quiescent circuit current Iq 0.8 mA IO1 = 0A, VC = 0V 3 Overcurrent protection CH1 I (S1) 1 0.06 * A D3 3 starting current CH2 I (S1) 2 0.15 * A D2 VIN VO2 Output ON VCH 4.2 4.5 4.8 V 1 5 Output control voltage D1 SI- 3102S Output OFF VCL 3.2 3.5 3.8 V 2 3 4 VC VO1 Output ON I CH 100 µA VC = 4.8V + + + GND Output control current Output OFF I CL –100 µA VC = 3.2V CIN CO1 CO2 Overvoltage protection starting 4 VOVP 30 * V voltage Thermal protection starting 5 CO1 : Output capacitor (47 to 100µF, 50V) TTSD 151 * ºC temperature CO2 : Output capacitor (47 to 100µF, 50V) *1 CIN : Input capacitors (approx. 47µF). Notes: Tantalum capacitors are recommended, for CO1, *1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on CO2 and CIN, especially at low temperatures. operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2 D1, D2, D3 : Protection diode. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%. Required as protection against reverse biasing *4. Overvoltage protection circuit is built only in CH2 (VO2 side). between input and output. *5. The indicated temperatures are junction temperatures. (Recommended diode: Sanken EU2Z.) *6. All terminals, except VIN and GND, are open. 14

Dropper Type Regulator ICs [2-output] SI-3102S Electrical Characteristics ■ Line Regulation (1) ■ Line Regulation (2) ■ Load Regulation (1) 5.10 5.10 5.10 VIN = VC VIN = VC VIN = VC IO2 = 5mA IO1 = 5mA 5.05 5.05 5.05 IO2 = Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) IO1 = 0A VIN = 0A 50mA 6V 5.00 20mA 5.00 100mA 5.00 14V 40mA 30V 4.95 4.95 4.95 4.90 4.90 4.90 4.85 4.85 4.85 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 0 10 20 30 40 50 Input voltage V IN (V) Input voltage VIN (V) Output current IO (mA) ■ Load Regulation (2) ■ Rise Characteristics ■ Quiescent Circuit Current 5.10 6 12 VIN = VC VC = 0V IO1 = 0A 5.05 5 10 Quiescent current lq (mA) Output voltage VO (V) Output voltage VO (V) VIN = 6V,14V 4 8 5.00 IO1 = 0A 3 20mA 6 40mA 4.95 30V 2 4 4.90 1 2 4.85 0 0 0 20 40 60 80 100 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 Output current IO (mA) Input voltage VIN (V) Input voltage VIN (V) ■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics (1) ■ Overcurrent Protection Characteristics (2) 6 6 6 VIN = 14V VIN = VC VIN = VC IO2 = 5mA IO2 = 5mA IO1 = 5mA 5 5 5 Output voltage VO2 (V) Output voltage VO1 (V) Output voltage VO2 (V) 4 4 4 OFF VIN = VIN = 3 3 6V 3 6V ON 14V 14V 30V 30V 2 2 2 1 1 1 0 0 0 0 1 2 3 4 5 6 0 20 40 60 80 100 120 0 0.1 0.2 0.3 0.4 0.5 Output ON/OFF control voltage VC (V) Output current IO (mA) Output current IO2 (A) ■ Thermal Protection Characteristics ■ Overvoltage Protection Characteristics ■ Ta—PD Characteristics 6 6 25 VIN = 6V VIN = VC With infinite heatsink With silicone grease G746 IO1 = IO2 = 5mA IO2 = 5mA (Shin-Etsu Chemical) Heatsink: aluminum 5 5 20 Power Dissipation PD (W) Output voltage VO1 (V) VO1 200 • 200 • 2mm Output voltage VO (V) 4 4 (2.3ºC/W) 15 100 • 100 • 2mm 3 3 (5.2ºC/W) VO2 10 2 2 75 • 75 • 2mm (7.6ºC/W) 5 1 1 Without heatsink 0 0 0 100 120 140 180 200 220 240 26 28 30 32 34 36 38 –40 –20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (ºC) Input voltage VIN (V) Operating temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 15

Dropper Type System Regulator ICs SI-3322S Features External Dimensions (unit: mm) ● High accuracy output of 5V±30mV Index area ● Memory backup power supply 4V±0.2V ● Power on reset function SI-3322S ● Supply voltage monitor function SKA Lot 7.40 10.00 ● Watch dog timer Lot 7.60 10.65 ● CR not required for setting external time constant 1 2 3 0.25 0.75 • 45° Adhesive surface 10.10 10.50 0.23 2.35 0.32 2.65 Absolute Maximum Ratings 0.33 0.51 0.10 0.30 0° to 8° 0.40 1.27 1.27 BSC Parameter Symbol Applicable terminals Ratings Unit Conditions Coplanarity (height difference among leads) 0.1mm max. VIN (1) BAI, VCC, VNMIC –0.3 to 32 V VS, NMIC, RSTTC, OUTE Terminal voltage VIN (2) VSC, NMI, RESET, OUTE –0.3 to 7 V W/D, STBY Standard Connection Diagram Storage temperature Tstg — –40 to +125 °C Operating temperature Top — –40 to +105 °C + A/D converter, R1 47µF I/O circuit, etc. Power dissipation PD — 1.4 W Ta = 25°C IG. SW + 47µF + R2 120Ω 68µF 6 5 4 3 2 VNMIC VCC VB VS VSC VCC AVCC 1 9 BAI NMI NMI + Electrical Characteristics (Ta = 25°C unless otherwise specified) BATT 47µF SI-3322S STBY 15 STBY Micro- computer 8 12 Ratings GND RESET RESET Parameter Symbol Unit Conditions NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND min typ max 13 11 10 16 14 OPEN or GND VSC output voltage VSC 3.8 4 4.2 V BAI = 4.2 to 16V, ISC = –0.2mA Logic circuit VS output voltage VS 4.97 5 5.03 V VCC = 5.2 to 16V, IO = –350mA VS –VSC voltage difference ∆VS 0.3 V VCC = 5.2V, ISC = –50mA R1, R2: NMI judge voltage (5V typ) variable resistor RSTTC: Normally open. NMI judge voltage (R1 + R2) • 2.5V/R2 GND connected when TRE BAI input current I BAI 0.6 mA BAI = 4.9 to 16V, ISC = –0.2mA R1, R2 2k is to be halved. Normally, VNMIC terminal is open. VCC input current I CC 5 mA VCC = 3 to 16V VB input current IB 25 mA VCC = 3 to 16V VS input current IS 20 mA VCC = BAI = 3 to 16V, ISC = 0mA NMIC input current I NMIC –0.04 –0.1 –0.4 mA VCC = BAI = 14V Circuit Block Diagram W/D input current I W/D –0.04 –0.1 –0.4 mA VCC = BAI = 14V + + RSTTC input current I RTC –0.04 –0.1 –0.4 mA VCC = BAI = 14V + VNMIC VCC VB VS VSC Lo VNIL 4.9 5 5.1 V NMIC = 0V 6 5 4 3 2 NMI judge voltage Start – Hysteresis ∆VN 0.12 0.3 V circuit + Current Main limit circuit Hi VNOH VS–0.5 V Isource = –1mA regulator NMI output voltage BAI 1 Lo VNOL 0.6 V Isink = 0.5mA 9 NMI – – + + VSOH VS–0.5 V Isource = –1mA NMI judge Hi circuit STBY output voltage Backup regulator Reference STBY Lo VSOL 0.6 V Isink = 0.5mA oscillation Counter control 15 STBY circuit circuit Hi VROH VS–0.5 V Isource = –1mA RESET output voltage Frequency OUTE comparator RESET Lo VROL 0.6 V Isink = 0.5mA GND 8 control control 12 RESET circuit circuit Hi VUOH VS–0.5 V Isource = –1mA OUTE output voltage Lo VUOL 0.6 V Isink = 0.5mA 13 11 10 16 14 NMIC OUTE OUTE W/D RSTTC Hi VTOH VS–0.5 V Isource = –1mA OUTE output voltage Lo VTOL 0.6 V Isink = 0.5mA Standby release time TST 5 10 20 ms Reset release time TRE 60 75 90 ms Timing Chart Reset cycle TRC 40 50 60 ms VNIL VCC VNIL+∆VN Reset period TRP 20 25 30 ms VS (BAI=14V) W/D signal stop detect period TWS 10 12.5 15 ms VSC 0V 0V Reset signal output time TNR 80 µs NMI Standby signal output time TRS 10 µs TRS STBY TST TRP W/D fail judge frequency FFH 2 5 kHz TRE RESET TNR Out enable release time TWE 40 50 10 ms TRC OUTE TWS TWE Notes: The direction of current flowing into the IC is positive (+). OUTE W/D HI or Lo Power on W/D input stop W/D input start Power off (microcomputer (microcomputer runaway) resets) 16

Dropper Type System Regulator ICs SI-3322S Electrical Characteristics ■ VS Line Regulation ■ VS Load Regulation ■ VS Rise Characteristics 5.03 5.03 6 5.02 5.02 5 IO = 0A 5.01 IO = 0A 5.01 4 VS (V) VS (V) VS (V) 5 5 3 0.4A 4.99 0.4A 4.99 2 4.98 4.98 12V 1 VCC = 5.2V 4.97 4.97 0 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VCC (V) IO (A) VCC (V) ■ VS Overcurrent Protection Characteristics ■ VCC Input Current ■ VB Input Current 6 5 20 No load 5 4 15 4 3 ICC (mA) I B (mA) VS (V) 3 10 VCC = 7V 2 2 12V 5 1 1 0 0 0 0 0.5 1 1.5 2 0 5 10 15 20 0 5 10 15 20 IO (A) VCC (V) VCC (V) ■ VS Input Current ■ VSC Rise Characteristics ■ VSC Overcurrent Protection Characteristics 20 5 6 No load 5 4 15 4 3 IS (mA) VSC (V) VSC (V) 10 3 2 2 5 1 1 0 0 0 0 5 10 15 20 0 5 10 15 20 0 2 4 6 8 10 VCC (V) BAI (V) ISC (A) ■ BAI Input Current ■ VS-VSC Voltage Difference ■ NMI Judge Voltage Characteristics 500 500 6 No load 5 400 400 4 ∆VS (mV) 300 300 IBAI (µA) NMI (V) 3 200 200 2 100 100 1 0 0 0 0 5 10 15 20 0 20 40 60 80 100 120 4.5 4.7 4.9 5.1 5.3 5.5 BAI (V) ISC (mA) VCC (V) 17

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004 Features External Dimensions (unit: mm) ● Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) 12.2±0.2 ● Power on reset function 10.5±0.2 +0.1 1.0 –0.05 ● Watchdog timer 16 9 Fin thickness ● Built-in drooping type overcurrent and thermal protection circuits (ch1) 7.5±0.2 Absolute Maximum Ratings (Ta=25ºC) +0.2 2.0 –0.8 Parameter Symbol Ratings Unit Remarks 1 8 –13 to 35 Reverse connection 1 min max. DC input voltage VIN V +0.15 40 400mS 1.27±0.25 0.4 – 0.05 2.5±0.2 –0.3 to 35 +0.15 Output control terminal voltage EN V 0.25– 0.05 40 400mS CH1 Io1 0.4 Output current A CH2 Io2 0.2 MODE terminal input voltage MODE W/D/C terminal input voltage W/D/C TC terminal input voltage TC –0.3 to 7 V CK terminal input voltage CK Vo1-fail terminal output voltage Vo1-fail Reset terminal output voltage RESET Standard Connection Diagram Junction temperature Tj –40 to 150 °C Storage temperature Tstg –40 to 150 °C D1 Vin Vo1 Thermal resistance 4.1 °C/W With infinite heatsink j-c (junction to case) EN With glass epoxy + copper foil board (size 5.0 x 7.4cm; Vo1 Thermal resistance j-a 38 °C/W SPF3004 (junction to ambient air) t: glass epoxy = 1.6mm/copper foil = 18µm) Cin Vo1 fail + MODE + Co1 Vo2 Battery Load GND RESET Electrical Characteristics W/D/C CK TC D2 Ratings Parameter Symbol min typ max Unit Conditions Input voltage VIN Vo1+VDIF1 * 3 35 * 4 V VIN = Vo1+VDIF1 to 18V, CH1 Vo1 4.90 5.00 5.10 Io1 = 0 to 0.4A, Tj = –40 to 125°C Output voltage VIN = Vo1+VDIF1 to 18V, CH1 Vo1 4.85 5.00 5.15 V Io1 = 0 to 0.4A, Tj = –40 to 150°C Rtc + VIN = Vo2+VDIF1+VDIF2 to 18V, CH2 Vo2 3.15 3.30 3.45 Io1 = 0 to 0.2A Load + Co2 CH1 VDIF11 0.5 Io1 = 0.4A Ctc Dropout voltage CH1 VDIF12 0.25 V Io1 = 0.2A, Tj = 25°C CH2 VDIF2 0.5 Io2 = 0.2A Cin: Capacitor (39µF) for oscillation prevention CH1 RREJ1 54 CO1: Output capacitor (39µF) Ripple rejection db f = 100 to 200Hz CO2: Output capacitor (39µF) CH2 RREJ2 54 Tantalum capacitors are recommended especially for low 10 50 VIN = 16V, EN = 0V µA temperatures. Quiescent circuit current Iq 50 250 VIN = 35V, EN = 0V D1, D2: Protection diodes. 5 10 mA Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z). GND current IGND 70 100 mA Io1 = Io2 = 0.2A Overcurrent protection CH1 Is11 0.402 1.80 Vo1 = 4.5V A starting current CH2 Is21 0.201 0.80 Vo2 = 2.8V Residual current CH1 Is21 0.402 1.80 Vo1 = 0V A at a short CH2 Is22 0.201 0.80 Vo2 = 0V EN output control voltage VENth 1.0 3.5 V Tj = –40 to 125°C Timing Chart 0.9 3.5 *8 IENH1 50 EN = 6.4V, Tj = –40 to 125°C EN output control ON current IENH2 30 µA EN = 3.51V, Tj = –40 to 125°C Vin EN (ON) operation EN (OFF) operation OFF IENL –1.0 1.0 EN = 0V, Tj = –40 to 125°C EN Vo1-fail terminal LOW voltage Vfail L 0.5 V Isink = 250µA, (Pull-up resistance 20kΩ typ) OCP operation Vo1-fail terminal HI voltage Vfail H Vo1–0.8V * 5 V Isource = 15µA Vo1thH Vo1thL Reset Vo1 operation Reset terminal LOW voltage VRSL 0.5 V Isink = 250µA, (Pull-up resistance 20kΩ typ) Reset terminal HI voltage VRSH Vo1–0.8V * 5 V Isource = 15µA Vo1 fail (Vo1 pull-up) OCP Vo1thH Vo1 • 0.97 V Vrs, Vfail 4.5V operation Reset CH1 operation Vo1thL 4.05 V Vrs, Vfail 0.8V Vo2thH Vo2thL Reset detect voltage Vo2 Vo2thH Vo2 • 0.985 V Vrs 3.0V CH2 MODE Vo2thL 3.00 V Vrs 0.8V (Vo1 system connection) Vmodeth Vo1 pull-up status ∆Vo1th ∆Vo1th = Vo1thH-Vo1thL Open status Reset detect voltage CH1 0.255 V TC hysteresis width ∆Vo2th ∆Vo2th = Vo2thH-Vo2thL (3.3 pull-up) CH2 0.105 V Power on reset delay time tdly 0.70 • Rtc • Ctc 0.72 • Rtc • Ctc 0.74 • Rtc • Ctc S Min. set time: 6mS RESET tdly tdly W/D time twd 0.52 • Rtc • Ctc 0.54 • Rtc • Ctc 0.56 • Rtc • Ctc S Min. set time: 4mS twd tdly-twdp W/D/C twdp W/D pulse time twdp 0.04 • Rtc • Ctc 0.06 • Rtc • Ctc 0.08 • Rtc • Ctc S Min. set time: 400µS (Vo1 system connection) W/D Open status Stop period MODE terminal control voltage Vmodeth 1.0 3.0 V CK MODE terminal ON ImodeH 200 MODE = 5V control current µA OFF ImodeL –1.0 1.0 MODE = 0V, Tj = –40 to 125°C W/D/C terminal control voltage Vw/d/cth 1.0 3.0 V *7 W/D/C terminal ON Iw/d/cH 200 W/D/C = 5V µA control current OFF Iw/d/cL –1.0 1.0 W/D/C = 0V, Tj = –40 to 125°C CK terminal control voltage Vckth 1.0 3.0 V Min. clock pulse time = 5µS (Duty 50%) CK terminal control ON IckH 200 CK = 5V µA current OFF IckL –1.0 1.0 CK = 0V, Tj = –40 to 125°C Notes: *3: Refer to dropout voltage. *4: Since PD (max) = {(VIN–VO1) • (IO1+ IO2)} + (VIN • Iq) + {(VO1–VO2) • IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 °C (min.) and 165°C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. 18 *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004 Electrical Characteristics ■ Rise Characteristics of Output Voltage ■ Line Regulation (V01) ■ Line Regulation (V02) 6 5.10 3.50 Output voltage VO1, VO2 (V) IO1=0A Output voltage VO1 (V) Output voltage VO2 (V) 0.4A 4 5.00 3.40 IO2=0A 0.2A IO1=0A 2 0.2A IO2 =0A 0.4A 0.1A 0.2A 4.90 3.30 0 0 2 4 6 8 10 0 10 20 30 40 0 10 20 30 40 Input voltage V IN (V) Input voltage VIN (V) Input voltage VIN (V) ■ Load Regulation (V01) ■ Load Regulation (V02) ■ Dropout Voltage (V01) 1.0 5.10 3.50 Vdif1 (V) Output voltage VO1 (V) Output voltage VO2 (V) Dropout voltage 5.00 3.40 0.5 VIN =6V 10V VIN =6V 14V 10V 18V 14V 18V 4.90 3.30 0 0 0 0 0.1 0.2 0.3 0.4 0 0.05 0.10 0.15 0.20 0 0.2 0.4 0.6 Output current IO1 (A) Output current IO2 (A) Output current IO1 (A) ■ GND Current ■ Overcurrent Protection Characteristics (V01) ■ Overcurrent Protection Characteristics (V02) 6 40 4 GND current IGND (mA) Output voltage VO1 (V) Output voltage VO2 (V) 4 VIN =6V IO1=0.4A 10V VIN =6V 10V 14V 14V 18V 20 18V 2 IO1=0.2A 2 IO1=0A 0 0 0 10 20 30 40 0 0.5 1.0 0 0.2 0.4 0.6 Input voltage VIN (V) Output current IO1 (A) Output current IO2 (A) ■ Thermal Protection Characteristics ■ EN Terminal Output Voltage ■ Ta—PD Characteristics 6 6 IO1=5mA 40 Power dissipation PD (W) Infinite heatsink equivalent Output voltage VO1 (V) Output voltage VO1 (V) 4 4 (Tc=25°C) 30 20 2 2 10 Copper foil area (5.0•7.4mm, t=1µm) 0 0 100 120 140 160 180 200 1 2 3 4 -40 0 25 50 85 125 150 Ambient temperature Ta (ºC) EN terminal voltage VEN (V) Operating temperature Ta (ºC) 19

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006 Features External Dimensions (unit: mm) ● Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) 12.2±0.2 ● Power on reset function 10.5±0.2 +0.1 1.0 –0.05 ● Watchdog timer 16 9 Fin thickness ● Built-in drooping type overcurrent and thermal protection circuits (ch1) 7.5±0.2 Absolute Maximum Ratings (Ta=25ºC) 2.0 – 0.8 +0.2 Parameter Symbol Ratings Unit Remarks 1 8 VIN1 DC input voltage –13 to 35 V Reverse connection 1 min max. +0.15 VIN2 1.27±0.25 0.4 –0.05 2.5±0.2 Vo1, Vo2 output control terminal voltage EN –0.3 to 35 V +0.15 0.25–0.05 Vo2 output control terminal voltage VC –0.3 to 35 V CH1 Io1 0.4 Output current A CH2 Io2 0.2 TC terminal input voltage TC CK terminal input voltage CK –0.3 to 7 V W/D/C terminal input voltage W/D/C Reset terminal output voltage RESET Standard Connection Diagram P D1 18.6 With an infinite heatsink mounted. Power dissipation W D1 P D2 2.97 *1 Vin1 Vo1 3Pin Junction temperature Tj –40 to 150 °C EN 4Pin 2Pin 14Pin RESET Rtc Operating temperature Top –40 to 105 °C Vin2 6Pin SFP3006 7Pin Storage temperature Tstg –40 to 150 °C Vc 5Pin Vo2 Co1 Cin 1,9, 8Pin Thermal resistance 12,13Pin 10Pin 11Pin Load (junction to case) j-c 6.7 °C/W With an infinite heatsink mounted. Battery – GND Tc – CK W/D/C Ctc Thermal resistance 42 °C/W *1 (junction to ambient air) j-a D2 Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm) * The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for Load Co2 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2. Electrical Characteristics – Ratings Parameter Symbol Unit Conditions min typ max Cin: Capacitor (39µF) for oscillation prevention * 2, 3 CO1: Output capacitor (39µF) Input voltage VIN1, 2 Vo1+VDIF1 35 V CO2: Output capacitor (39µF) CH1 Vo1 4.85 5.00 5.15 VIN1 = 6 to 18V, Io = 0 to 0.3A Tantalum capacitors are recommended particularly for low Output voltage V temperatures (tantalum capacitors of about 0.47µ F in parallel). CH2 Vo2 4.85 5.00 5.15 VIN2 = 6 to 18V, Io = 0 to 0.3A D1, D2: Protection diodes. CH1 VDIF1 0.5 Required for protection against reverse biasing between input Dropout voltage V and output (Recommended diode: SANKEN EU2Z). CH2 VDIF2 0.5 CH1 RREJ1 54 Ripple rejection db f = 100 to 120Hz CH2 RREJ2 54 10 50 VIN1 = 16V, VEN = 0V µA Quiescent circuit current Iq 50 250 VIN1 = 35V, VEN = 0V Circuit Block Diagram 5 10 mA GND current IGND 70 100 mA Io1 = Io2 = 0.2A CH1 Is11 0.402 1.8 Vo1 = 4.5V Vin1 Vo1 Overcurrent protection (4 Pin) starting current A (3 Pin) CH2 Is21 0.201 0.8 Vo2 = 4.5V D Vo1 RESET EN E RESET EN TSD Drive1 Err. (14 Pin) Residual current CH1 Is21 0.402 1.8 Vo1 = 0V (2 Pin) OCP1 T W/D at a short A CH2 Is22 0.201 0.8 Vo2 = 0V Vin2 Vo2 EN output control voltage VENth 0.9 3.5 V (6 Pin) (7 Pin) Vc D EN output control ON IENH 50 EN = 5V current µA Vc (5 Pin) (Vo2: EN) Drive2 Err. E T W/D/C (11 Pin) OFF IENL –1.0 1.0 EN = 0V OCP2 Isink = 250µA GND Reset terminal LOW voltage VRSL 0.5 V (1,9,12,13 Pin) (Pull-up resistance 20kΩ typ) Reset terminal HI voltage VRSH Vo1-0.8V V Isource = 15µA *4 TC (8 Pin) CK (10 Pin) Vo1thH Vo1• 0.97 V Vrs 4.5V Reset detect voltage CH Vo1thL 4.05 V Vrs 0.8V Power on reset delay time t dly 1.18 • Rtc • Ctc 1.26 • Rtc • Ctc 1.35 • Rtc • Ctc S Min. set time: 6mS W/D time t wd 0.93 • Rtc • Ctc 1.03 • Rtc • Ctc 1.13 • Rtc • Ctc S Min. set time: 4mS Timing Chart W/D pulse time t wdp 0.07 • Rtc • Ctc 0.13 • Rtc • Ctc 0.19 • Rtc • Ctc S Min. set time: 400µS CK terminal control voltage Vckth 1.0 3.0 V Min. clock pulse time: 5µs (Duty 50%) Vin1, Vin2 (+B) CK terminal control ON IckH 200 VCK = 5V current µA ENthH ENthL EN OFF IckL –1.0 1.0 VCK = 0V Vo1 Vo1thH Vo1thL Vc output control voltage Vcth 1.0 3.5 V (BACK UP power supply) IcH 300 Vc = 5V Vc output control current µA Vo IcL –1.0 1.0 Vc = 0V Vo2 (Main power supply) W/D/C terminal control voltage Vw/d/cth 1.0 3.0 V TC tdly twd W/D/C terminal control ON Iw/d/cH 200 VW/D/C = 5V RESET µA W/D OFF current OFF Iw/d/cL –1.0 1.0 VW/D/C = 0V CK twdp mode W/D/C Notes: *2: Refer to Dropout Voltage. *3: Since PD (max) = (VIN–VO1) • IO1+ (VIN2–VO2) • IO2 + (VIN • Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 °C (min.) and 165°C (typ). These values represent the design warranty. 20

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006 Electrical Characteristics ■ Rise Characteristics of Output Voltage (V01) ■ Rise Characteristics of Output Voltage (V02) ■ Line Regulation (V01) 6 6 5.10 5.05 Output voltage VO1 (V) Output voltage VO2 (V) Output voltage VO1 (V) 4 4 IO1=0A 0.2A IO2 =0A 5.00 0.4A 0.2A 0.4A 2 2 IO1=0A 4.95 0.2A 0.4A 0 0 4.90 0 2 4 6 8 10 0 2 4 6 8 10 0 5 10 15 20 25 30 Input voltage V IN (V) Input voltage VIN (V) Input voltage VIN (V) ■ Line Regulation (V02) ■ Load Regulation (V01) ■ Load Regulation (V02) 5.10 5.10 5.10 5.05 5.05 5.05 Output voltage VO2 (V) Output voltage VO1 (V) Output voltage VO2 (V) 5.00 5.00 5.00 IO1=0A VIN =6V 0.1A VIN =6V 10V 0.2A 10V 14V 4.95 4.95 14V 4.95 18V 18V 4.90 4.90 4.90 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0 0.05 0.10 0.15 0.20 Input voltage VIN (V) Output current IO1 (A) Output current IO2 (A) ■ Dropout Voltage (V01) ■ Dropout Voltage (V02) ■ Overcurrent Protection Characteristics (V01) 0.6 0.6 6 Vdif1 (V) Vdif2 (V) Output voltage VO1 (V) 0.4 0.4 4 VIN =6V Dropout voltage Dropout voltage 10V Ta=150°C 14V 25°C 18V –40°C 0.2 0.2 2 Ta=150°C 25°C –40°C 0 0 0 0 0.2 0.4 0 0.1 0.2 0 0.2 0.4 0.6 0.8 Output current IO1 (A) Output current IO2 (A) Output current IO1 (A) ■ Overcurrent Protection Characteristics (V02) ■ Thermal Protection Characteristics ■ Ta—PD Characteristics 6 6 20 IO1=5mA Infinite heatsink 16 equivalent (Tc=25°C) Power dissipation PD (W) Output voltage VO2 (V) Output voltage VO1 (V) 4 4 12 VIN =6V 10V 14V 18V 8 2 2 Copper foil area 4 (5.0•7.4mm, t=18µm) 0 0 0 0 0.2 0.4 0.6 100 125 150 175 200 -50 0 50 100 150 Output current IO2 (A) Ambient temperature Ta (ºC) Operating temperature Ta (ºC) 21

Switching Type Regulator ICs SI-3201S Features External Dimensions (unit: mm) ● Output current of 3A (Ta = 25ºC, VIN = 8 to 18V) ● High efficiency of 82% (VIN = 14V, I O = 2A) 3.2 ±0.2 10.0 ±0.2 4.2 ±0.2 2.8 ±0.2 ● Requires 5 external components only 0.5 ● Built-in reference oscillator (60kHz) 4.0 ±0.2 7.9 ±0.2 ● Phase internally corrected ● Output voltage internally corrected 16.9 ±0.3 ● Built-in overcurrent and thermal protection circuits ● Built-in soft start circuit (17.9) a 2.6 ±0.1 b (2.0) 5.0 ±0.6 0.95 ±0.15 Absolute Maximum Ratings (Ta=25ºC) +0.2 0.85 –0.1 (4.6) (8.0) Parameter Symbol Ratings Unit Conditions +0.2 –0.1 0.45 Input voltage VIN 35 V P1.7 ±0.7 •4 = 6.8 ±0.7 3.9 ±0.7 (4.3) Output voltage IO 3 A 8.2 ±0.7 SWOUT terminal voltage VSWOUT –1 V 1. VIN a: Part No. PD1 22 W With infinite heatsink 2. SWOUT Power Dissipation b: Lot No. 1 2 3 4 5 3. GND PD2 1.8 W Stand-alone 4. VS 5. SS Junction temperature Tj –40 to +150 ºC Storage temperature Tstg –40 to +125 ºC (Forming No. 1101) Junction to case thermal resistance j-c 5.5 ºC/W Junction to ambient-air thermal j-a 66.7 ºC/W resistance Standard Circuit Diagram SI-3201S L1 1 SW Tr 2 VIN VO Recommended Operating Conditions VIN a b SWOUT Ratings c d Parameter Symbol e Unit Conditions min typ max f D1 + g + Input voltage VIN 8 18 V C1 C2 5 SS h VS 4 Output current IO 0.5 3 A C3 GND i Operating temperature Top –40 +85 ºC Ta—PD characteristics 3 GND GND Electrical Characteristics (VIN = 14V, I OUT = 2A, Tj = 25ºC unless otherwise specified) C1: 1000µF C2: 1000µF L 1: 250µH D1: RK46 (Sanken) Ratings Parameter Symbol Unit Conditions a: Internal power supply f : Comparator min typ max b: Thermal protection g: Overcurrent protection c: Reference oscillator h: Error amplifier Output voltage VO 4.80 5.00 5.20 V d: Reset i : Reference voltage e: Latch & driver Line regulation VO LINE 100 mV VIN = 8 to 18V Load regulation VO LOAD 50 mV IO = 0.5 to 3A Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple Efficiency *1 82 % type 1000µF or higher capacitors with low internal resistance. Oscillation frequency f OSC 50 60 70 kHz Refer to the respective data books for more information on Quiescent circuit current Iq 5 10 mA IO = 0A reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. Overcurrent protection starting IS 3.1 A *2 (3) L1 should be a choke coil with a low core loss for switching current power supplies. Low level voltage VSSL 0.2 V (4) Use a Schottky barrier diode for D1 and make sure that the Soft *3 reverse voltage applied to the 2nd terminal (SWOUT terminal) is start Source current when low I SSL 15 25 35 µA VSSL = 0.2V within the maximum ratings (–1V). If you use a fast-recovery terminal Discharge resistance RDIS 200 kΩ VIN = 0V diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings Notes: to be applied to the 2nd terminal (SWOUT terminal). Applying a *1. Efficiency is calculated by the following equation: reversed-bias voltage exceeding the maximum rating to the VO • I O = • 100 (%) 2nd terminal (SWOUT terminal) may damage the IC. VIN • I IN *2. A dropping-type overcurrent protection circuit is built in the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the Since this terminal has a high impedance, connect it to the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open positive (+) terminal of C2 via the shortest possible route. when not using it since it is already pulled up in the IC. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the high- frequency current line with minimum wiring length. SI-3201S SI-3201S SI-3201S 5 SS 5 SS 5 SS C3 C3 22

Switching Type Regulator ICs SI-3201S Electrical Characteristics ■ Line Regulation ■ Load Regulation ■ Rise Characteristics 5.10 5.15 6 5 Io = 0A 5.10 5.05 = 1A = 2A Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) 5.05 4 = 3A 5.00 Io = 0A = 1A 5.00 3 VIN =18V 4.95 = 2A = 3A = 10V 4.95 2 = 7V 4.90 4.90 1 4.85 4.85 0 0 5 10 15 20 25 30 35 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 Input voltage VIN (V) Output current IO (A) Input voltage VIN (V) ■ Efficiency Curve ■ Overcurrent Protection Characteristics ■ Overcurrent Protection Temperature Characteristics 90 6 6 80 5 5 VIN =18V Output voltage VO (V) Output voltage VO (V) V IN = 18V = 10V 4 (%) 4 70 = 10V = 7V TC = +100, 25, --20ºC Efficiency = 7V 3 3 60 2 2 50 1 1 40 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0 Output current IO (A) Output current IO (A) Output current IO (A) ■ Ta —PD Characteristics 25 With infinite heatsink With silicone grease Heatsink: aluminum 20 Power Dissipation PD (W) 15 10 5 0 –40 0 40 80 120 160 Operating temperature Ta (ºC) 23

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04 Features External Dimensions (unit: mm) SMD-16A ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals 0.89 ±0.15 2.54 ±0.25 1.0 ±0.3 ● Low saturation PNP transistor use 0.25 0.75 –0.05 +0.15 ● Allows direct driving using LS-TTL and C-MOS logic levels 16 9 ● Built-in overcurrent protection circuits 9.8 ±0.3 a 6.8max 3.0 ±0.2 6.3 ±0.2 8.0 ±0.5 ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed b 0 to 0.15 ● Surface-mount full-mold package +0.15 0.3 –0.05 Pin 1 20.0max 8 Absolute Maximum Ratings (Ta=25ºC) 19.56 ±0.2 Parameter Symbol Ratings Unit Conditions Power supply voltage VB –13 to +40 V 4.0max 3.6 ±0.2 Drive terminal applied voltage VD –0.3 to VB V 1.4 ±0.2 Input terminal voltage VIN –0.3 to +7.0 V DIAG output applied voltage VDIAG –0.3 to +7.0 V a: Part No. b: Lot No. DIAG output source current IDIAG 3 mA Voltage across power supply VB–D VB –0.4 V and drive terminal Output current IO 1.5 A Equivalent Circuit Diagram Power dissipation PD 2.6 W Without heatsink, all circuits operating The MIC is bound by the dotted lines. 9,12,16 VB 2 * Junction temperature Tj –40 to +150 ºC Pre. Reg. Operating temperature TOP –40 to +100 ºC 2 IN1 CONT. Drive Storage temperature Tstg –40 to +150 ºC 11kΩ typ. 3 O.C.P DIAG1 DIAG DET. 1,15 Out1 2 * Electrical Characteristics (VBopr =14V, Ta=25ºC unless otherwise specified) T.S.D 14 D1 1 * Ratings Parameter Symbol Unit Conditions min typ max 7 IN2 CONT. Drive 11kΩ typ. Operating power supply voltage VBopr 6.0 16 V 6 O.C.P DIAG2 Iq 5 12 mA Lo output DIAG DET. Quiescent circuit current 8,10 11 Out2 *2 Threshold input voltage VINth 0.8 3.0 V D2 1 * 4,5,13 Hi output I IN 1.0 mA VIN = 5V GND *2 Input current [Abbreviations] Lo output I IN 0 100 µA VIN = 0V Drive: Drive circuit DIAG.DET.: Diagnostic circuit CONT: ON/OFF circuit O.C.P.: Overcurrent protection Saturation voltage of output VCE (sat) 0.5 V IO 1.0A, VBopr = 6 to 16V Pre.Reg: Pre-regulator T.S.D.: Thermal protection transistor Output terminal sink current IO (off) 2.0 mA VO = 0V, VIN = 0V *1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic Saturation voltage of DIAG output VDL 0.3 V IDIAG = 3mA IC. Do not, therefore, apply an external voltage in operation. Leak current of DIAG output IDGH 100 µA VDIAG = 5V *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be Open load detection resistor Ropen 1 30 kΩ shorted at a pattern near the product. Overcurrent protection starting IS 1.6 A VO = VBopr –1.9V current TON 8 30 µs IO = 1A Output transfer time Standard Circuit Diagram TOFF 15 30 µs IO = 1A TPLH 10 30 µs IO = 1A DIAG output transfer time TPHL 15 30 µs IO = 1A VB Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute PZ D1 (all terminals except, VB and GND, are open). Out SDH04 VCC IN Diagnostic Function DIAG 5.1kΩ Load VB GND 3.0V 0.8V VIN GND Truth table VIN VO GND VOUT H H GND SHORT L L OVER Is VOLTAGE TSD OPEN OPEN Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal. IO VOUT turns "L" when a high impedance is connected to the IN terminal in series. GND VDIAG Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU 24

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04 Electrical Characteristics ■ Quiescent Circuit Current (dual circuit) ■ Circuit Current (single circuit) ■ Circuit Current (dual circuit) VIN = 0V VIN = 5V VIN = 5V 20 50 100 Ta = –40ºC Ta = –40ºC 40 80 Ta = 25ºC –40ºC 125ºC 25ºC 30 60 Iq (mA) IB (mA) IB (mA) 25ºC 10 125ºC 20 40 125ºC VIN = 0V VO shorted 10 20 VIN = 0V VO open 0 0 0 0 10 20 30 40 46 0 10 20 30 40 46 0 10 20 30 40 46 VB (V) VB (V) VB (V) ■ Saturation Voltage of Output Transistor ■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) 1.5 20 20 Ta = VB = 16V 125ºC VB = VB = VB = 6V 18V 18V 15 15 1.0 VCE (sat) (V) VO (V) VO (V) 14V 14V 25ºC 10 10 0.5 –40ºC 5 5 6V 6V 0 0 0 0 1 2 3 0 1 2 3 4 0 1 2 3 4 IO (A) IO (A) IO (A) ■ Overcurrent Protection Characteristics (Ta=125ºC) ■ Threshold Characteristics of Input Voltage ■ Input Terminal Source Current VB = 14V IO = 1A VB = 14V 20 15 1.0 Ta = 125ºC 25ºC –40ºC VB = 18V 0.8 15 10 14V 0.6 IIN (mA) VO (V) VO (V) Ta = 125ºC 10 25ºC 0.4 –40ºC 5 5 6V 0.2 0 0 0 0 1 2 3 4 0 1 2 3 0 2 4 6 8 10 IO (A) VIN (V) VIN (V) ■ Input Terminal Sink Current ■ Saturation Voltage of DIAG Output VB = 14V VIN= 0V 1.0 0.3 VB = 14V IDIAG = 3mA 0.2 IINL (µA) VDL (V) 0.5 0.1 0 0 –50 0 50 100 150 –50 0 50 100 150 Ta (ºC) Ta (ºC) 25

High-side Power Switch ICs [With Diagnostic Function] SI-5151S Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2 3.2 ±0.2 output status signals 10 ±0.2 2.8 ±0.2 ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels 4 ±0.2 7.9 ±0.2 ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply 16.9 ±0.3 ● TO220 equivalent full-mold package not require insulation mica 20 max 2.6 ±0.1 a b +0.2 2.9 –0.3 Absolute Maximum Ratings (Ta=25ºC) 0.94 ±0.15 R-end Parameter Symbol Ratings Unit Conditions Power supply voltage VB 40 V +0.2 3.6 ±0.5 +0.2 0.85 –0.1 0.45 –0.1 Input terminal voltage VIN –0.3 to VB V P1.7 ±0.1 • 4 = 6.8 4 ±0.6 DIAG terminal voltage VDIAG 6 V Collector-emitter voltage VCE 40 V 1. GND a: Part No. 2. VIN b: Lot No. Output current IO 1.8 A 3. VO 4. DIAG PD1 18 W With infinite heatsink (Tc = 25ºC) 5. VB Power Dissipation Stand-alone without heatsink (Forming No. 1123) PD2 1.5 W (Tc = 25ºC) Junction temperature Tj –40 to +125 ºC Operating temperature TOP –40 to +100 ºC Storage temperature Tstg –40 to +125 ºC Standard Circuit Diagram VB 5 Electrical Characteristics (Ta=25ºC unless otherwise specified) VO PZ Parameter Symbol Ratings Unit Conditions SI-5151S 3 VCC min typ max VIN 2 DIAG Operating power supply voltage VBopr 6.0 30 V 4 5.1kΩ Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V LS-TTL or 1 Load 0.5 V IO 1.0A, VBopr = 6 to 16V CMOS Saturation voltage of output VCE (sat) transistor 1.0 V IO 1.8A, VBopr = 6 to 16V Output leak current IO, leak 2 mA VCEO = 16V GND Truth table Output ON VIH 2.0 VB V VBopr = 6 to 16V VIN VO Input voltage Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V H H L L Output ON I IH 1 mA VIN = 5V Input current Output OFF I IL –0.1 mA VIN = 0V Overcurrent protection starting IS 1.9 A VBopr = 14V, VO = VBopr –1.5V current Thermal protection starting Diagnostic Function TTSD 125 145 ºC temperature Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V Normal Open load Shorted load Overheat Normal TON 8 30 µs VBopr = 14V, IO = 1A Output transfer time VIN TOFF 15 30 µs VBopr = 14V, IO = 1A VDH 4.5 6 V VCC = 6V VO DIAG output voltage VDL 0.3 V VCC = 6V, IDD = 2mA TPLH 30 µs VBopr = 14V, IO = 1A DIAG DIAG output transfer time TPHL 30 µs VBopr = 14V, IO = 1A Minimum load inductance L 1 mH Mode VIN VO DIAG Note: L L L Normal H H H * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open). L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 26

High-side Power Switch ICs [With Diagnostic Function] SI-5151S Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor 10 40 1.0 Ta = --40ºC 30 V B= Ta = 25ºC 6 to 16V VCE (sat) (V) --40ºC IB (mA) Iq (mA) 25ºC 95ºC 5 95ºC 20 Ta = 95ºC 0.5 --40ºC 10 25ºC 0 0 0 0 10 20 30 40 0 10 20 30 40 50 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC) 16 16 16 14 14 14 VB = VB = 12 VB = 12 14V 12 14V 14V 10 10 10 VO (V) VO (V) VO (V) 8 8 8 6 6 6 4 4 4 2 2 2 0 0 0 0 1 2 3 0 1 2 3 0 1 2 3 IO (A) IO (A) IO (A) ■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 2 VIN = 5V VIN = 0V Ta = VB = 14V VB = 14V 95ºC 25ºC –40ºC 15 VB = 16V I O = 1A IIH (mA) IIL (µA) VO (V) 10 0.5 1 5 0 0 0 0 1 2 2.2 –40 0 50 100 –40 0 50 100 VIN (V) Ta (ºC) Ta (ºC) ■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics 0.2 16 VB = 14V Vo 14 DIAG 12 6 VB = 14V VDG (sat) (V) 10 5 DIAG (V) IO = 10mA VO (V) 0.1 8 4 6 3 4 2 2 1 0 0 –40 0 50 100 0 50 100 150 Ta (ºC) Ta (ºC) 27

High-side Power Switch ICs [With Diagnostic Function] SI-5152S Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2 3.2 ±0.2 output status signals 10 ±0.2 2.8 ±0.2 ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels 4 ±0.2 7.9 ±0.2 ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply 16.9 ±0.3 ● Tj = 150ºC guaranteed 20 max 2.6 ±0.1 ● TO220 equivalent full-mold package not require insulation mica a b +0.2 2.9 –0.3 0.94 ±0.15 Absolute Maximum Ratings (Ta = 25ºC) R-end Parameter Symbol Ratings Unit Conditions +0.2 3.6 ±0.5 +0.2 0.85 –0.1 0.45 –0.1 Power supply voltage VB 40 V P1.7 ±0.1 • 4 = 6.8 4 ±0.6 Input terminal voltage VIN –0.3 to VB V DIAG terminal voltage VDIAG 6 V 1. GND a: Part No. 2. VIN b: Lot No. Collector-emitter voltage VCE 40 V 3. VO 4. DIAG Output current IO 1.8 A 5. VB PD1 22 W With infinite heatsink (Tc=25ºC) Power Dissipation (Forming No. 1123) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj –40 to +150 ºC Operating temperature TOP –40 to +100 ºC Storage temperature Tstg –40 to +150 ºC Standard Circuit Diagram VB 5 VO Electrical Characteristics (Ta=25ºC unless otherwise specified) PZ SI-5152S 3 VCC Ratings Parameter Symbol Unit Conditions VIN 2 min typ max DIAG VBopr 6.0 30 V 4 5.1kΩ Operating power supply voltage LS-TTL or Load Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V 1 CMOS Saturation voltage of output 0.5 V IO 1.0A, VBopr = 6 to 16V VCE (sat) transistor 1.0 V IO 1.8A, VBopr = 6 to 16V Truth table GND Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V VIN VO Output ON VIH 2.0 VB V VBopr = 6 to 16V Input voltage H H Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V L L Output ON I IH 1 mA VIN = 5V Input current Output OFF I IL –0.1 mA VIN = 0V Overcurrent protection starting IS 1.9 A VBopr = 14V, VO = VBopr –1.5V current Diagnostic Function Thermal protection starting TTSD 150 ºC VBopr 6V temperature Normal Open load Shorted load Overheat Normal Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V VIN TON 8 30 µs VBopr = 14V, IO = 1A Output transfer time TOFF 15 30 µs VBopr = 14V, IO = 1A VO DIAG output leak current IDIAG 100 µA VCC = 6V, VBopr = 6 to 16V Saturation voltage of DIAG output VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA DIAG TPLH 30 µs VBopr = 14V, IO = 1A DIAG output transfer time TPHL 30 µs VBopr = 14V, IO = 1A Mode VIN VO DIAG Minimum load inductance L 1 mH Normal L L L H H H Note: L H H Open load H H H * The rule of protection against reverse connection of power supply is VB = –13V, one minute L L L (all terminals except, VB and GND, are open). Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 28

High-side Power Switch ICs [With Diagnostic Function] SI-5152S Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor 10 40 1.0 Ta = –40ºC 30 VB = Ta = 25ºC 6 to 16V VCE (sat) (V) IB (mA) –40ºC Iq (mA) 25ºC 95ºC 5 95ºC 20 Ta = 95ºC 0.5 –40ºC 10 25ºC 0 0 0 0 10 20 30 40 0 10 20 30 40 50 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta = –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC) 16 16 16 14 14 14 VB = VB = 12 VB = 12 14V 12 14V 14V 10 10 10 VO (V) VO (V) VO (V) 8 8 8 6 6 6 4 4 4 2 2 2 0 0 0 0 1 2 3 0 1 2 3 0 1 2 3 IO (A) IO (A) IO (A) ■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 2 VIN = 5V VIN = 0V Ta = VB = 14V 95ºC 25ºC –40ºC VB = 14V 15 VB = 16V IO = 1A IIH (mA) IIL (µA) VO (V) 10 0.5 1 5 0 0 0 0 1 2 2.2 –40 0 50 100 –40 0 50 100 VIN (V) Ta (ºC) Ta (ºC) ■ Saturation Voltage of DIAG Output 0.2 VB = 14V VDL (V) 0.1 0 –40 0 50 100 Ta (ºC) 29

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2 3.2 ±0.2 output status signals 10 ±0.2 2.8 ±0.2 ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels 4 ±0.2 7.9 ±0.2 ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply 16.9 ±0.3 ● Tj = 150ºC guaranteed 20 max 2.6 ±0.1 ● Built-in Zener diode a b ● TO220 equivalent full-mold package not require insulation mica +0.2 2.9 –0.3 0.94 ±0.15 R-end Absolute Maximum Ratings (Ta=25ºC) +0.2 3.6 ±0.5 +0.2 0.85 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit Conditions P1.7 ±0.1 • 4 = 6.8 4 ±0.6 Power supply voltage VB –13 to +40 V Input terminal voltage VIN –0.3 to VB V 1. GND a: Part No. 2. VIN b: Lot No. DIAG terminal voltage VDIAG 6 V 3. VO 4. DIAG Refer to "Surge clamp voltage" 5. VB Collector-emitter voltage VCE VB —VZ V in Electrical Characteristics (Forming No. 1123) Output current IO 2.04 A PD1 22 W With infinite heatsink (Tc=25ºC) Power Dissipation PD2 1.8 W Stand-alone without heatsink Junction temperature Tj –40 to +150 ºC Standard Circuit Diagram Operating temperature TOP –40 to +100 ºC VB Storage temperature Tstg –40 to +150 ºC 5 VO SI-5153S 3 VCC Electrical Characteristics (Ta=25ºC unless otherwise specified) VIN 2 DIAG Ratings Parameter Symbol Unit Conditions 4 5.1kΩ min typ max LS-TTL or 1 Load Operating power supply voltage VBopr 6.0 30 V CMOS Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V Saturation voltage of output VCE (sat) 0.47 V IO 2.05A, VBopr = 6 to 16V GND transistor Truth table VIN VO Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V H H Output ON VIH 2.0 VB V VBopr = 6 to 16V L L Input voltage Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V Input current Output OFF I IL –0.1 mA VIN = 0V Overcurrent protection starting Diagnostic Function IS 2.05 A VBopr = 14V, VO = VBopr –1.5V current Normal Open load Shorted load Overheat Normal Thermal protection starting TTSD 150 ºC VBopr 6V temperature VIN Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V TON 8 30 µs VBopr = 14V, IO = 1A VO Output transfer time TOFF 15 30 µs VBopr = 14V, IO = 1A VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V DIAG DIAG output voltage VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 µs VBopr = 14V, IO = 1A DIAG output transfer time Mode VIN VO DIAG TPHL 30 µs VBopr = 14V, IO = 1A L L L Normal H H H Minimum load inductance L 1 mH L H H Open load H H H Surge clamp voltage *1 VZ 28 34 40 V IC = 5mA L L L Shorted load H L L L L L Note: Overheat H L L *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). ● DIAG output will be undetermined when a voltage * The rule of protection against reverse connection of power supply is VB = –13V, one minute. exceeding 25V is applied to VB terminal. * This driver is exclusively used for ON/OFF control. 30

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor 10 50 2 40 Ta = –40ºC VCE (sat) (V) 30 Ta = Iq (mA) IB (mA) Ta = –40ºC 25ºC 125ºC 5 1 25ºC 20 150ºC 150ºC VB = 6 to 16V 25ºC 10 –40ºC 0 0 0 0 10 20 30 40 0 10 20 30 40 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Overcurrent Protection Characteristics (Ta =25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC) 20 20 20 VB = VB = VB = 18V 18V 18V 15 15 15 14V 14V VO (V) VO (V) VO (V) 14V 10 10 10 8V 8V 8V 5 5 5 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5 IO (A) IO (A) IO (A) ■ Threshold Characteristics of Input Voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 5 VB = 14V VB = 14V VIN = 5V VIN = 0V Ta = 150ºC 25ºC –40ºC 4 0.8 15 VB = 16V IO = 1A 0.6 3 I IH (mA) I IL (µA) VO (V) 10 0.4 2 5 0.2 1 0 0 0 0 1 2 –50 0 50 100 150 –50 0 50 100 150 VIN (th) (V) Ta (ºC) Ta (ºC) ■ Output Terminal Leak Current ■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics 2 0.5 20 VB = 14V VB = 14V VB = 14V IDIAG = 2mA VDIAG = 5V 0.4 IO = 10mA 15 VO IO leak (mA) 0.3 VDL (V) VO (V) 1 10 0.2 VDIAG 5 0.1 0 0 0 –50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200 Ta (ºC) Ta (ºC) Ta (ºC) 31

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2 3.2 ±0.2 output status signals 10 ±0.2 2.8 ±0.2 ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels 4 ±0.2 7.9 ±0.2 ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply 16.9 ±0.3 ● Tj = 150ºC guaranteed 20 max 2.6 ±0.1 ● Built-in Zener diode a ● TO220 equivalent full-mold package not require insulation mica b +0.2 2.9 –0.3 0.94 ±0.15 R-end Absolute Maximum Ratings (Ta=25ºC) +0.2 3.6 ±0.5 +0.2 Parameter Symbol Ratings Unit Conditions 0.85 –0.1 0.45 –0.1 P1.7 ±0.1 • 4 = 6.8 4 ±0.6 Power supply voltage VB –13 to +40 V Input terminal voltage VIN –0.3 to VB V 1. GND a: Part No. DIAG terminal voltage VDIAG 6 V 2. VIN b: Lot No. 3. VO Refer to "Surge clamp voltage" in 4. DIAG Collector-emitter voltage VCE VB –VZ V Electrical Characteristics 5. VB Output current IO 2.5 A (Forming No. 1123) PD1 22 W With infinite heatsink (Tc =25ºC) Power Dissipation PD2 1.8 W Stand-alone without heatsink Junction temperature Tj –40 to +150 ºC Standard Circuit Diagram Operating temperature TOP –40 to +100 ºC VB Storage temperature Tstg –40 to +150 ºC 5 VO Electrical Characteristics (Ta=25ºC unless otherwise specified) SI-5154S 3 VCC Ratings VIN 2 DIAG Parameter Symbol Unit Conditions min typ max 4 5.1kΩ LS-TTL Operating power supply voltage VBopr 6.0 30 V or 1 Load CMOS Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V Saturation voltage of output 0.3 V IO 1.0A, VBopr = 6 to 16V VCE (sat) transistor 0.72 V IO 2.5A, VBopr = 6 to 16V GND Truth table Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V VIN VO VBopr = 6 to 16V H H Output ON VIH 2.0 VB V Input voltage L L Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V Input current Output OFF I IL –0.1 mA VIN = 0V Overcurrent protection starting current IS 2.6 A VBopr = 14V, VO = VBopr –1.5V Diagnostic Function Thermal protection starting TTSD 150 ºC VBopr 6V temperature Normal Open load Shorted load Overheat Normal Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V VIN TON 8 30 µs VBopr = 14V, IO = 1A Output transfer time TOFF 15 30 µs VBopr = 14V, IO = 1A VO VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V DIAG output voltage DIAG VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 µs VBopr = 14V, IO = 1A DIAG output transfer time TPHL 30 µs VBopr = 14V, IO = 1A Mode VIN VO DIAG Minimum load inductance L 1 mH Normal L L L H H H Surge clamp voltage *1 VZ 28 34 40 V IC = 5mA Open load L H H H H H L L L Note: Shorted load H L L *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). L L L Overheat H L L * The rule of protection against reverse connection of power supply is VB = –13V, one minute. * This driver is exclusively used for ON/OFF control. ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 32

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor 10 50 2 40 Ta = –40ºC Ta= –40ºC VCE (sat) (V) 25ºC 30 25ºC Iq (mA) IB (mA) 5 150ºC Ta = 1 125ºC 20 150ºC 25ºC VB = 6 to 16V 10 –40ºC 0 0 0 0 10 20 30 40 0 10 20 30 40 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC) 20 20 20 VB = VB = VB = 18V 18V 18V 16 16 16 14V 14V 14V 12 12 12 VO (V) VO (V) VO (V) 8 8 8 8V 8V 8V 4 4 4 6V 6V 6V 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5 IO (A) IO (A) IO (A) ■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 5 VB = 14V VB = 14V VIN = 5V VIN = 0V Ta = 125ºC 25ºC –40ºC 4 0.8 15 VB = 16V IO = 1A 0.6 3 I IH (mA) I IL (µA) VO (V) 10 0.4 2 5 0.2 1 0 0 0 0 1 2 –50 0 50 100 150 –50 0 50 100 150 VIN (th) (V) Ta (ºC) Ta (ºC) ■ Output Terminal Leak Current ■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics 2 0.5 20 VB = 14V VB = 14V VB = 14V IDIAG = 2mA VDIAG = 5V 0.4 IO = 10mA 15 VO IO leak (mA) 0.3 VDL (V) VO (V) 1 10 0.2 VDIAG 5 0.1 0 0 0 –50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200 Ta (ºC) Ta (ºC) Ta (ºC) 33

High-side Power Switch ICs [With Diagnostic Function] SI-5155S Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2 3.2 ±0.2 output status signals 10 ±0.2 2.8 ±0.2 ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels 4 ±0.2 7.9 ±0.2 ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply 16.9 ±0.3 ● Tj = 150ºC guaranteed 20 max 2.6 ±0.1 ● TO220 equivalent full-mold package not require insulation mica a b +0.2 2.9 –0.3 0.94 ±0.15 Absolute Maximum Ratings (Ta=25ºC) R-end Parameter Symbol Ratings Unit Conditions +0.2 3.6 ±0.5 +0.2 0.85 –0.1 0.45 –0.1 Power supply voltage VB –13 to +40 V P1.7 ±0.1 • 4 = 6.8 4 ±0.6 Input terminal voltage VIN –0.3 to VB V DIAG terminal voltage VDIAG 6 V 1. GND a: Part No. 2. VIN b: Lot No. Collector-emitter voltage VCE 40 V 3. VO 4. DIAG Output current IO 2.5 A 5. VB PD1 22 W With infinite heatsink (Tc=25ºC) Power dissipation (Forming No. 1123) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj –40 to +150 ºC Operating temperature TOP –40 to +100 ºC Storage temperature Tstg –40 to +150 ºC Standard Circuit Diagram VB 5 VO Electrical Characteristics (Ta=25ºC unless otherwise specified) PZ SI-5155S 3 VCC Ratings Parameter Symbol Unit Conditions VIN 2 min typ max DIAG 4 5.1kΩ Operating power supply voltage VBopr 6.0 30 V LS-TTL or 1 Load Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V CMOS Saturation voltage of output 0.3 V IO 1.0A, VBopr = 6 to 16V VCE (sat) transistor 0.72 V IO 2.5A, VBopr = 6 to 16V Truth table GND Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V VIN VO Output ON VIH 2.0 VB V VBopr = 6 to 16V Input voltage H H Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V L L Output ON I IH 1 mA VIN = 5V Input current Output OFF I IL –0.1 mA VIN = 0V Overcurrent protection starting IS 2.6 A VBopr = 14V, VO = VBopr –1.5V current Diagnostic Function Thermal protection starting TTSD 150 ºC VBopr 6V temperature Normal Open load Shorted load Overheat Normal Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V TON 8 30 µs VBopr = 14V, IO = 1A VIN Output transfer time TOFF 15 30 µs VBopr = 14V, IO = 1A VO VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V DIAG output voltage VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA DIAG TPLH 30 µs VBopr = 14V, IO = 1A DIAG output transfer time TPHL 30 µs VBopr = 14V, IO = 1A Minimum load inductance L 1 mH Mode VIN VO DIAG Normal L L L Note: H H H * The rule of protection against reverse connection of power supply is VB = –13V, one minute L H H Open load H H H (all terminals except, VB and GND, are open). L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 34

High-side Power Switch ICs [With Diagnostic Function] SI-5155S Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor 10 50 2 40 Ta = –40ºC Ta= –40ºC VCE (sat) (V) 30 Iq (mA) IB (mA) 25ºC 25ºC 5 150ºC Ta = 1 125ºC 20 150ºC 25ºC VB = 6 to 16V 10 –40ºC 0 0 0 0 10 20 30 40 0 10 20 30 40 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta =125ºC) 20 20 20 VB = VB = VB = 18V 18V 18V 16 16 16 14V 14V 14V 12 12 12 VO (V) VO (V) VO (V) 8 8 8 8V 8V 8V 4 4 4 6V 6V 6V 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5 IO (A) IO (A) IO (A) ■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 5 VB = 14V VB = 14V VIN = 5V VIN = 0V Ta = 125ºC 25ºC –40ºC 0.8 4 15 VB = 16V IO = 1A 0.6 3 I IH (mA) I IL (µA) VO (V) 10 0.4 2 5 0.2 1 0 0 0 0 1 2 –50 0 50 100 150 –50 0 50 100 150 VIN (th) (V) Ta (ºC) Ta (ºC) ■ Output Terminal Leak Current ■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics 2 0.5 20 VB = 14V VB = 14V VB = 14V IDIAG = 2mA VDIAG = 5V 0.4 IO = 10mA 15 VO IO leak (mA) 0.3 VDL (V) VO (V) 1 10 0.2 VDIAG 5 0.1 0 0 0 –50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200 Ta (ºC) Ta (ºC) Ta (ºC) 35

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals 31 ±0.2 Ellipse 3.2 ±0.15 • 3.8 4.8 ±0.2 ● Low saturation PNP transistor use (VCE (sat) 0.2V) 24.4 ±0.2 1.7 ±0.1 ● Allows direct driving using LS-TTL and C-MOS logic levels 3.2 ±0.15 ● Built-in Zener diode in transistor eliminates the need of (or simplifies) external 12.9 ±0.2 16 ±0.2 surge absorption circuit 9.9 ±0.2 a 2.45 ±0.2 ● Built-in independent overcurrent and thermal protection circuit in each circuit b ● Built-in protection against reverse connection of power supply 6.4 ±0.5 ● Tj = 150ºC guaranteed +0.2 +0.2 +0.2 1.15 –0.1 0.65 –0.1 0.55 –0.1 14 • P2.03 ±0.1 = (28.42) Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Ratings Unit Conditions 31.3 ±0.2 a: Part No. Power supply voltage VB –13 to +40 V b: Lot No. Drive terminal applied voltage VD –0.3 to VB V 1 23 15 Input terminal voltage VIN –0.3 to +7.0 V DIAG output applied voltage VDIAG –0.3 to +7.0 V DIAG output source current IDIAG –3 mA Voltage across power supply VB–O VB –34 V and output terminal Equivalent Circuit Diagram Voltage across power supply VB–D –0.4 V VB and drive terminal Output current IO 1.5 A a b Output reverse current IO –1.8 A VIN d Electrostatic resistance ES/A ±250 V C = 200pF, R = 0Ω c e Stand-alone without heatsink, f g Power Dissipation PD 4.8 W OUT all circuits operating D Junction temperature Tj –40 to +150 ºC Operating temperature TOP –40 to +115 ºC MIC Storage temperature Tstg –50 to +150 ºC GND FLT a: Pre-regulator e: Overcurrent protection circuit b: Overvoltage protection circuit f: Diagnostic circuit Electrical Characteristics (VBopr =14V, Tj= –40 to +150ºC unless otherwise specified) c: Control circuit g: Thermal protection circuit d: Driver circuit Ratings Parameter Symbol Unit Conditions min typ max Operating power supply voltage VBopr 6.0 16 V Iq 0.8 1.6 mA Lo output Standard Circuit Diagram Quiescent circuit current (per circuit) VB Circuit current (per circuit) IB 19.3 mA Tj = 25ºC Threshold input voltage VINth 0.8 3.0 V VCC Hi output VIN 3.7 V Input voltage 1 3 9 14 Lo output VIN 1.5 V 5 VB D1 D2 D3 IN1 4 Hi output I IN –1.0 mA VIN = 5V FLT1 Input current 7 IN2 Lo output I IN 100 µA VIN = 0V SLA2501M FLT2 8 12 IN3 FLT3 13 Saturation voltage of output VCE (sat) 0.2 V IO 1.2A, VBopr = 6 to 16V GND1 GND2 OUT1 OUT2 OUT3 transistor 6 11 2 10 15 VCE (sat) 1.0 V IO 1.5A, VBopr = 6 to 16V Output terminal sink current IO (off) 2.5 5 mA Tj = 25ºC, VCEO = 14V 29 34 39 V Tj = 25ºC, IC = 10mA Surge clamp voltage VB–O 28 34 40 V IC = 5mA Saturation voltage of DIAG output VDL 0.4 V IDGH = –2mA, VBopr = 6 to 16V Leak current of DIAG output IDGH –100 µA VCC = 7V Open load detection resistor Ropen 5.5 kΩ Diagnostic Function Overcurrent protection starting IS 1.6 A VO = VBopr –1.5V current Normal Open load Shorted load Overheat Normal Thermal protection starting TTSD ºC VBopr 6V VIN temperature TON 30 µs IO = 1A VO Output transfer time TOFF 100 µs IO = 1A TPLH 30 µs IO = 1A VDIAG DIAG output transfer time TPHL 100 µs IO = 1A Minimum load inductance Lo 1.0 mH Maximum ON duty D(ON) 0 60 % Note: * The Zener diode has an energy capability of 200 mJ (single pulse). 36 * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M Electrical Characteristics ■ Quiescent Circuit Current (single circuit) ■ Circuit Current (single circuit) ■ Saturation Voltage of Output Transistor 5 40 1.0 VIN = 0V VIN = 5V V IN = 5V Ta = –40ºC V B = 6 to 16V 4 Ta =150ºC 30 Ta = –40ºC Ta = 25ºC Ta =125ºC Ta = 25ºC VCE (sat) (V) 3 Iq (mA) IB (mA) Ta = 125ºC Ta = –40ºC 20 0.5 2 Ta = 125ºC Ta = 25 ºC 10 1 0 0 0 0 10 20 30 40 0 10 20 30 40 0 1 2 3 3.5 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC) 20 20 20 VB = 14V V B = 14V VB = 14V VO (V) VO (V) VO (V) 10 10 10 0 0 0 0 1 2 3 4 0 1 2 3 4 5 0 1 2 3 4 IO (A) IO (A) IO (A) ■ Threshold Input Voltage ■ Input Current (Output ON) ■ Input Current (Output OFF) 20 1.0 20 VB = 16V I OUT = 1A VB = 14V V IN = 0V V B = 14V V IN = 0V Ta = 125ºC 25ºC –40ºC IIH (mA) IIL (µA) VO (V) 10 0.5 10 0 0 0 0 1 2 3 4 --50 0 50 100 125 –50 0 50 100 125 VIN (V) Ta (ºC) Ta (ºC) ■ Saturation Voltage of DIAG Output ■ Output Reverse Current ■ Thermal Protection 0.3 1.4 20 10 V B = 14V V B = 16V IO = 10mA VIN = 5V 1.2 VO I FLT = 3 (mA) 1.0 0.2 V FLT VFLT (V) 0.8 Ta = --40ºC VDL (V) VO (V) VF (V) Ta = 25ºC 10 5 0.6 Ta = 125ºC 0.1 0.4 0.2 0 0 0 –50 0 50 100 125 0 1 2 3 4 0 60 100 160 180 Ta (ºC) IF (A) Ta (ºC) 37

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals 31±0.2 Ellipse 3.2 ±0.15 • 3.8 4.8 ±0.2 ● Low saturation PNP transistor use (VCE (sat) 0.5V) 24.4 ±0.2 1.7 ±0.1 ● Allows direct driving using LS-TTL and C-MOS logic levels 3.2 ±0.15 ● Built-in overcurrent protection circuits ● Built-in protection against reverse connection of power supply 16 ±0.2 12.9 ±0.2 9.9 ±0.2 a 2.45 ±0.2 ● Tj = 150ºC guaranteed b 6.4 ±0.5 Absolute Maximum Ratings (Ta=25ºC) +0.2 1.15 –0.1 +0.2 0.65 –0.1 +0.2 0.55 –0.1 Parameter Symbol Ratings Unit Conditions 14 • P2.03 ±0.1 = (28.42) Power supply voltage VB –13 to +40 V 31.3 ±0.2 a: Part No. Input terminal voltage VIN –0.3 to +7.0 V b: Lot No. DIAG output applied voltage VDIAG –0.3 to +7.0 V DIAG output source current IDIAG 3 mA 1 23 15 Output current IO 1.2 A Stand-alone operation without Power Dissipation PD 4.8 W heatsink; all circuits operating Junction temperature Tj –40 to +150 ºC Equivalent Circuit Diagram Operating temperature TOP –40 to +100 ºC Storage temperature Tstg –50 to +150 ºC SLA2502M The MIC is bound by the dotted lines. 8 VB Pre. Reg. 2 Electrical Characteristics (VBopr =14V, Ta=25ºC unless otherwise specified) DIAG1 NI1 3 CONT. 11kΩ typ. Drive O.C.P DIAG DET 1 Out1 Ratings Parameter Symbol Unit Conditions T.S.D min typ max 6 Drive NI2 CONT. Operating power supply voltage VBopr 6.0 16 V 5 11kΩ typ. O.C.P DIAG2 DIAG DET 7 Quiescent circuit current (per circuit) Iq 5 12 mA VIN = 0V 4 Out2 GND1 Threshold input voltage VINth 0.8 3.0 V Hi output I IN 1.0 mA VIN = 5V Pre. Reg. Input current NI3 10 Drive µA CONT. Lo output I IN 0 100 VIN = 0V 11 11kΩ typ. O.C.P DIAG3 DIAG DET 9 Saturation voltage of output Out3 VCE (sat) 0.5 V IO 1.0A, VBopr = 6 to 16V T.S.D transistor 14 Drive NI4 Output terminal sink current IO (off) 2.0 mA VO = 0V, VIN = 0V CONT. 11kΩ typ. 13 O.C.P DIAG4 DIAG DET Saturation voltage of DIAG output VDL 0.3 V I DIAG = 3mA 15 Out4 12 GND4 Leak current of DIAG output IDGH 100 µA VDIAG = 5V Open load detection resistor Ropen 30 kΩ [Abbreviations] Overcurrent protection starting Drive: Drive circuit DIAG.DET.: Diagnostic circuit IS 1.6 A VO = VBopr –1.9V CONT: ON/OFF circuit O.C.P.: Overcurrent protection current Pre.Reg: Pre-regulator T.S.D.: Thermal protection TON 8 30 µs IO = 1A Output transfer time TOFF 15 30 µs IO = 1A TPLH 10 30 µs IO = 1A Standard Circuit Diagram DIAG output transfer time TPHL 15 30 µs IO = 1A Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute VB (all terminals except VB and GND should be open). PZ D1 Out Diagnostic Function SLA2502M VCC IN DIAG 5.1kΩ VB Load GND 3.0V 0.8V VIN GND Truth table VIN VO GND VOUT H H GND SHORT L L OVER Is VOLTAGE TSD OPEN OPEN Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN IO terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They GND VDIAG must be shorted at a pattern near the product. Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU 38

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M Electrical Characteristics ■ Circuit Current (single circuit) ■ Circuit Current (4 circuits) ■ Saturation Voltage of Output Transistor (VB = 14V) 60 200 1.0 Ta = VB –40ºC 50 Ta = 150 –40ºC 25ºC 40 Ta = VCE (sat) (V) 25ºC 25ºC 125ºC IB (mA) IB (mA) 30 100 0.5 125ºC –40ºC 125ºC 20 VIN = 0V 50 10 VIN = 0V 0 0 0 0 10 20 30 40 46 0 10 20 30 40 46 0 1 2 3 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Threshold Input Voltage ■ Input Current (Output OFF) 20 20 3 VB = VB = 14V 18V VIN = 0V 15 Ta = 15 125ºC 25ºC –40ºC 2 14V I IL (µA) VO (V) VO (V) 10 10 1 5 5 6V 0 0 0 0 1 2 3 4 0 1 2 3 –50 0 50 100 150 IO (A) VIN (V) Ta (ºC) ■ Input Current (Output Hi) ■ Saturation Voltage of DIAG Output ■ Quiescent Circuit Current (dual circuit) VIN = 0V 0.5 0.3 20 VB = 14V VB = 14V IDIAG = 3mA Ta = –40V 0.4 Ta = 25V –40ºC 125V 25ºC 0.2 0.3 I IH (mA) Iq (mA) VDL (V) 125ºC 10 0.2 0.1 0.1 VO shorted VO open 0 0 0 0 1 2 3 4 5 6 –50 0 50 100 150 0 10 20 30 40 46 VIN (V) Ta (ºC) VB (V) ■ Thermal Protection Characteristics ■ Output Terminal Leak Current (VO = 0V) ■ Open Load Detection Resistor 15 1.1 15 Ta = –40ºC 1.0 25ºC 10 0.9 10 IOLEAK (mA) ROPEN (kΩ) TSD Ta = VO1 (V) VB = 14V 125ºC 125ºC RL = 1.3kΩ 0.8 25ºC 5 0.7 5 –40ºC 0.6 0 0.5 0 0 50 100 150 200 5 10 15 20 25 5 10 15 20 Ta (ºC) VB (V) VB (V) 39

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003 Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 12.2 ±0.2 output status signals +0.1 10.5 ±0.2 1.0 –0.05 ● DMOS 2ch output Fin 16 9 thickness ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits 7.5 ±0.2 +0.2 2.0 –0.8 Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Ratings Unit Conditions 1 8 +0.15 Power supply voltage VB 35 V 1.27 ±0.25 0.4 –0.05 2.5±0.2 +0.15 Input terminal voltage VIN –0.3 to 7 V 0.25–0.05 Input terminal current I IN 5 mA DG terminal voltage VDG –0.3 to 7 V DG terminal current I DG 5 mA Drain to source voltage VDS VB –45 V Output current IO 1.8 A Block Diagram (for one channel) Power dissipation PD 2 W Ta=25ºC VB Source to drain Di forward current IF 0.8 A Bias Thermal Protect Channel temperature Tch 150 ºC Clamp Input Lavel Charge Current Operating temperature IN TOP –40 to +105 ºC Logic Shifting Pump Limit Storage temperature Tstg –40 to +150 ºC Chopper DG Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) DG Logic Open/Short Sense Ratings Parameter Symbol Unit Conditions min typ max GND OUT Operating power supply voltage VB (opr) 5.5 35 V Quiescent circuit current Iq 1 mA VIN=0V, VOUT=0V 200 mΩ IO=1A Output ON resistance RDS (ON) 300 mΩ IO=1A, Ta=80ºC Standard Connection Diagram Output leak current IO, leak 50 100 µA VOUT=0V Input threshold Output ON VIHth 1.4 2.0 3.0 V Ta= –40 to +105ºC voltage Output OFF VILth 1.0 1.8 V Ta= –40 to +105ºC 7,8 OUT1 15,16 OUT2 Output ON I IH 70 200 µA VIN=5V 1 VB 5V Inpup current Output OFF I IL 12 µA VIN=0V (2, 3) SPF5003 DG1 9 6 5V Load Load (10,11) DG2 Overcurrent protection starting current IS 1.9 3 A VOUT =VO –1.5V 14 Vin 1 5 Vin 2 13 4 12 Internal current limit ILim 5 A VOUT=0V (7V max) (7V max) GND RIN Thermal shutdown operating temperature TTSD 155 165 ºC RDG RDG C P RIN Load open detection threshold voltage Vopen 3 4.5 V U 1.5 *1 TON 70 140 µs RL=14Ω, VO= –5V Output transfer time * RIN and RDG are needed to protect CPU and SPF5003 in case of reverse connection of VB terminal. TOFF 35 90 µs RL=14Ω, VO •10% * Make VB of 1Pin and 9Pin short from the fin to be plated by solder. DG leak current I DG 20 µA VDG= 5.5V Low level DG output voltage VDGL 0.15 0.5 V IDG=1.6mA Timing Chart *1 TPLH 70 140 µs DG output transfer time TPHL 45 120 µs VIN ON VIN OFF VO open Normal OCP Normal TSD Normal Open load Normal Shorted load Normal Over- Note: 1. Transient time is showed Wave Form below. VB heat * VIN VOUT Recommended Operating Conditions (for one channel) Wave Form Internal current limit TSDON IOUT Ratings Parameter Unit VIN TSDOFF min max DG High inpidance VOUT –5V Power supply voltage 5.5 16 V Output transfer time VIH 4 5.5 V VOUT • 10% VOUT Mode VIN DG VO TON TOFF VIL –0.3 0.9 V Normal H H H L L L VDG • 90% IO 1 A DG output transfer time H H H Open load L H H VDG VDG • 10% TPLH TPHL H L L (Limiting) RIN 10 20 kΩ Shorted load L L L H L L RDG 10 20 kΩ Overheat L L L 40

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High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004 Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 17.28±0.2 output status signals 15.58±0.2 +0.1 1.0 –0.05 ● DMOS 2ch output 24 13 Fin thickness ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits 10.5±0.3 a 7.5±0.2 b +0.2 2.0–0.8 Absolute Maximum Ratings (Ta=25ºC) 1 12 Parameter Symbol Ratings Unit Conditions +0.15 1.27±0.25 0.4 –0.05 2.5±0.2 Power supply voltage VB 35 V +0.15 0.25–0.05 Input terminal voltage VIN –0.3 to 7 V Input terminal current I IN 5 mA a: Part No. DG terminal voltage VDG –0.3 to 7 V b: Lot No. DG terminal current I DG 5 mA Drain to source voltage VDS VB –45 V Output current IO 2.5 A Block Diagram (for one channel) Power dissipation PD 2.7 W Ta=25ºC VB Source to drain Di forward current IF 0.8 A Bias Thermal Protect Channel temperature Tch 150 ºC Clamp Input Lavel Charge Current Operating temperature TOP –40 to +105 ºC IN Logic Shifting Pump Limit Storage temperature Tstg –40 to +150 ºC Chopper DG Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) DG Logic Open/Short Sense Ratings Parameter Symbol Unit Conditions min typ max GND OUT Operating power supply voltage VB (opr) 5.5 35 V Quiescent circuit current Iq 1 mA VIN=0V, VOUT=0V 150 mΩ IO =2A Output ON resistance RDS (ON) 250 mΩ IO =1A, Ta=80ºC Standard Connection Diagram Output leak current IO, leak 50 µA VOUT =0V Output ON VIH 2.0 3.0 V Ta= –40 to +105ºC Input voltage Output OFF VIL 1.0 1.8 V Ta= –40 to +105ºC 2,3 OUT1 14,15 OUT2 Inpup current Output ON I IH 70 µA VIN =5V 1 VB 5V Overcurrent protection starting current IS 2.6 A VOUT =VO –1.5V (4,5,6) SPF5004 DG1 13 24 5V Load Load DG2 Internal current limit ILim 10 A VOUT =0V (16,17,18) 12 23 Vin 2 11 21 9 Thermal shutdown operating temperature TTSD 155 165 ºC Vin 1 (7V max) (7V max) GND Vopen 3 V RIN Load open detection threshold voltage RDG RDG C P RIN TON 165 µs U Output transfer time TOFF 60 µs VB of * Make plated4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin DG leak current I DG 20 µA VDG =5.5V to be by solder. Low level DG output voltage VDGL 0.15 V IDG =1.6mA TPLH 70 µs DG output transfer time Timing Chart TPHL 45 µs VIN ON VIN OFF VO open Normal OCP Normal TSD Normal Open load Normal Shorted load Normal Over- VB heat VIN Recommended Operating Conditions (for one channel) VOUT Internal current limit Ratings Parameter Unit min max IOUT TSDON TSDOFF Power supply voltage 5.5 16 V DG High inpidance VIH 4 5.5 V VIL –0.3 0.9 V Mode VIN DG VO IO 1.15 A Normal H H H L L L RIN 10 20 kΩ H H H Open load L H H RDG 10 20 kΩ H L L (Limiting) Shorted load L L L H L L Overheat L L L 42

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High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007 Features External Dimensions (unit: mm) ● Built-in diagnostic function to detect short and open circuiting of loads and 17.28±0.2 +0.1 output status signals 15.58±0.2 1.0 –0.05 Fin ● DMOS 3ch output 24 13 thickness ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits 10.5±0.3 a 7.5±0.2 b +0.2 2.0–0.8 Absolute Maximum Ratings (Ta=25ºC) 1 12 Parameter Symbol Ratings Unit Conditions +0.15 1.27±0.25 0.4 –0.05 2.5±0.2 Power supply voltage VB 35 V +0.15 0.25–0.05 Input terminal voltage VIN –0.3 to 7 V Input terminal current I IN 5 mA a: Part No. b: Lot No. DG terminal voltage VDG –0.3 to 7 V DG terminal current I DG 5 mA Drain to source voltage VDS VB –45 V Output current IO 1.8 A Block Diagram (for one channel) Power dissipation PD 2.7 W Ta=25ºC, all circuit operating VB Source to drain Di forward current IF 0.8 A Bias Thermal Protect Channel temperature Tch 150 ºC Clamp Input Lavel Charge Current Operating temperature TOP –40 to +105 ºC IN Logic Shifting Pump Limit Storage temperature Tstg –40 to +150 ºC Chopper DG Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) DG Logic Open/Short Sense Ratings Parameter Symbol Unit Conditions min typ max GND OUT Operating power supply voltage VB (opr) 5.5 35 V Quiescent circuit current Iq 1 mA VIN =0V, VOUT =0V 200 mΩ IO =1A Output ON resistance RDS (ON) 350 mΩ IO =1A, Ta=80ºC Standard Connection Diagram Output leak current IO, leak 50 100 µA VOUT =0V Input threshold Output ON VIHth 1.4 2.0 3.0 V Ta= –40 to +105ºC 5,6 voltage Output OFF VILth 1.0 1.8 V Ta= –40 to +105ºC 1 OUT1 10,11 13 VB OUT2 20,21 Output ON I IH 70 200 µA VIN =5V OUT3 Inpup current SPF5007 DG1 4 5V Output OFF I IL 12 µA VIN =0V DG2 9 19 Load Load Load DG3 GND1 GND2 GND3 IN1 IN2 IN3 Overcurrent protection starting current IS 1.9 3 A VOUT =VO –1.5V 2 7 17 3 8 18 RDG Internal current limit ILim 5 A VOUT =0V RDG RDG C Thermal shutdown operating temperature TTSD 155 165 ºC P RIN U RIN Load open detection threshold voltage Vopen 1.5 3 4.5 V RIN TON 70 140 µs RL=14Ω, VOUT =VB –5V Output transfer time * RIN and RDG are needed to protect CPU and SPF5007 in case of reverse TOFF 35 90 µs RL=14Ω, VB •10% connection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder. DG leak current I DG 20 µA VDG =5.5V Low level DG output voltage VDGL 0.15 0.5 V IDG =1.6mA Timing Chart TPLH 70 140 µs DG output transfer time TPHL 45 120 µs VIN ON VIN OFF VO open Normal OCP Normal TSD Normal Open load Normal Shorted load Normal Over- VB heat VIN VOUT Recommended Operating Conditions (for one channel) Internal current limit TSDON IOUT Ratings Parameter Unit TSDOFF min max DG High inpidance Power supply voltage 5.5 16 V VIH 4 5.5 V Mode VIN DG VO VIL –0.3 0.9 V Normal H H H L L L IO 1 A H H H Open load L H H RIN 10 20 kΩ H L L (Limiting) Shorted load L L L H L L RDG 10 20 kΩ Overheat L L L 44

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High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017 Features External Dimensions (unit: mm) ● Internal current sense resistor 14.74±0.2 ● High accuracy current monitor output (sample & hold function) 13.04±0.2 +0.1 1.0 –0.05 ● Built-in overcurrent and thermal protection circuits 20 11 Fin thickness a 10.5±0.3 7.5±0.2 Absolute Maximum Ratings (Ta=25ºC) b 2.0±0.2 Parameter Symbol Ratings Unit Conditions 1 10 Power supply voltage 1 VB 0 to 32 V +0.15 1.27±0.25 0.4 –0.05 2.5±0.2 Power supply voltage 2 Vcc –0.5 to 7.0 V +0.15 Power supply voltage 3 VB 0 to 40 V VB terminal, t = 1 min 0.25–0.05 Vsense+ –0.8 to 6 Current sensing voltage V a) Part No. Vsense– Vsense+±Io • Rsense b) Lot No. Output terminal voltage VOUT –2 to 32 V VPWM Input terminal voltage –0.5 to 7.0 V VHold Output current IOUT 2.0 A Block Diagram (for one channel) Power dissipation PD 2.4 to 5.0 W Depends on surface-mount board pattern Vcc 1 SFP5017 Storage temperature Tstg –40 to +150 °C VB 17 Channel temperature Tch 150 °C clamp D Charge OSC Pump S Sense OUT Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent PWM TSD OCP MOS 19 2 Sense+ Ratings 70kΩ 18 Parameter Symbol Unit Conditions CMOS Logic Sense min typ max Hold lamp + R 3 70kΩ – 20 Min. operating power supply voltage VB min 6 V Minimum operation of OUT terminal. Sense– S/H Operating power supply voltage 1 VB 10 14 16 V *1 5 S/H Operating power supply voltage 2 VCC 5.0 V *2 4 6 C LG Quiescent circuit current 1 Iqvb 7.2 mA Vcc = 5V, VPWM = 0V, One circuit equivalent Quiescent circuit current 2 Iqvcc 0.2 mA Vcc = 5V, VPWM = 0V VPWMH 3.5 PWM terminal input voltage V Vcc = 5V VPWML 1.5 Standard Connection Diagram PWM terminal input current IPWMH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3 1 VHoldH 3.5 VCC 17 Hold terminal input voltage V Vcc = 5V VB VHoldL 1.5 Hold terminal input current IHoldH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3 Controlling 19 OUT 0.14 Ω IOUT = 1A microcomputer 2 PWM SFP5017 18 Output ON resistance RDSon CPU Sense+ 0.21 Ω IOUT = 1A, Ta = 125°C 3 Hold 20 D1 Sense – 0.21 Ω IOUT = 1A 1kΩ 5 S/H Current sensing resistance Rsense 5.1 LG C 0.25 Ω IOUT = 1A, Ta = 125°C 0.01 µF kΩ 4 6 D2 Overcurrent protection starting current Is 3.0 A *4 C1 Thermal shutdown operating temperature Ttsd 150 °C * Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V) Operation circuit for current monitor output Io 0.2 1.2 A *1 0.2 V Io = 0A, Vcc = 5V 0.488 0.500 0.512 V Io = 0.2A, Vcc = 5V Current monitor output voltage VSH 1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C Timing Chart 2.925 3.000 3.075 V Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C Ordinary operation Thermal Ordinary operation Overcurrent Ordinary operation (auto hold) protection (external hold) protection (auto hold) 5 mA Io = 1A, Vcc = 5V, VSH = 0V Current monitor output current ISH –6 mA Io = 1A, Vcc = 5V, VSH = 5V VPWM t on 15 µs Vout Output transfer time t off 15 µs Io = 0.5A, Vcc = 5V Icoil Output rise time tr 100 µs Output fall time tf 50 µs VS/H *1 *1 *2 Current monitor output hold time t sh 500 650 µs 500 to 650 500 to 650 Io = 0.5A, Vcc = 5V, usec usec Current monitor output delay time t shd 1 µs C1 = 0.033µF VHold Hold time after inputting hold t shh 2 µs VB = 11V, Vcc = 5V, Io = 1.2A, Truth table 70 µs C1 = 0.033µF S/H settling time t stt VPWM L H VB = 11V, Vcc = 5V, Io = 1.2A, 80 µs C1 = 0.033µF, Ta = 125°C VOUT L H Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70kΩ typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics. 46

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High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018 Features External Dimensions (unit: mm) ● Internal current sense resistor 12.2±0.2 ● High accuracy current monitor output (sample & hold function) 10.5±0.2 1.0 –0.05 +0.1 ● Built-in overcurrent and thermal protection circuits 16 9 Fin thickness 7.5±0.2 Absolute Maximum Ratings (Ta=25ºC) +0.2 2.0 –0.8 Parameter Symbol Ratings Unit Conditions Power supply voltage 1 VB 0 to 32 V 1 8 +0.15 Power supply voltage 2 Vcc –0.5 to 7.0 V 1.27±0.25 0.4 –0.05 2.5±0.2 +0.15 Power supply voltage 3 VB 0 to 40 V VB terminal, t = 1 min 0.25–0.05 Vsense+ –0.8 to 6 Current sensing voltage V Vsense– Vsense+±Io • Rsense Output terminal voltage VOUT –2 to 32 V VPWM Input terminal voltage –0.5 to 7.0 V VHold Output current IOUT 2.0 A Block Diagram (for one channel) Power dissipation PD 2.0 W Depends on surface-mount board pattern Vcc 2 VB Storage temperature Tstg –40 to +150 °C 11 Channel temperature Tch 150 °C clamp D Charge OSC Pump S Sense MOS OUT Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) PWM TSD OCP 14 3 Sense+ 70kΩ Ratings CMOS Logic 13 Parameter Symbol Unit Conditions Hold Sense min typ max 4 lamp + R 70kΩ – 15 Min. operating power supply voltage VB min 6 V Minimum operation of OUT terminal. Sense– S/H Operating power supply voltage 1 VB 10 14 16 V *1 6 S/H Operating power supply voltage 2 VCC 5.0 V *2 5 7 C LG Quiescent circuit current 1 Iqvb 7.2 mA Vcc = 5V, VPWM = 0V Quiescent circuit current 2 Iqvcc 0.2 mA Vcc = 5V, VPWM = 0V VPWMH 3.5 PWM terminal input voltage VPWML 1.5 V Vcc = 5V Standard Connection Diagram PWM terminal input current IPWMH 70 110 µA Vcc = 5V, VPWM = 5V, Active H *3 2 VHoldH 3.5 VCC 11 VB Hold terminal input voltage V Vcc = 5V VHoldL 1.5 Hold terminal input current IHoldH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3 14 Controlling OUT 0.14 Ω IOUT = 1A microcomputer 3 PWM SFP5018 13 CPU Sense+ Output ON resistance RDSon 4 0.21 Ω IOUT = 1A, Ta = 125°C Hold Sense– 15 D1 0.21 Ω IOUT = 1A 1kΩ 6 S/H Current sensing resistance Rsense 0.01 5.1 kΩ C LG 0.25 Ω IOUT = 1A, Ta = 125°C µF 5 7 D2 C1 Overcurrent protection starting current Is 3.0 A *4 Thermal shutdown operating temperature Ttsd 150 °C * Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V) Operation circuit for current monitor output Io 0.2 1.2 A *1 0.2 V Io = 0A, Vcc = 5V 0.488 0.500 0.512 V Io = 0.2A, Vcc = 5V Current monitor output voltage VSH 1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C Timing Chart 2.925 3.000 3.075 V Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C Ordinary operation Thermal Ordinary operation Overcurrent Ordinary operation (auto hold) protection (external hold) protection (auto hold) 5 mA Io = 1A, Vcc = 5V, VSH = 0V Current monitor output current ISH –6 mA Io = 1A, Vcc = 5V, VSH = 5V VPWM t on 15 µs Vout Output transfer time t off 15 µs Io = 0.5A, Vcc = 5V Icoil Output rise time tr 100 µs Output fall time tf 50 µs VS/H *1 *1 *2 Current monitor output hold time t sh 500 650 µs 500 to 650 500 to 650 Io = 0.5A, Vcc = 5V, usec usec Current monitor output delay time t shd 1 µs C1 = 0.033µF VHold Hold time after inputting hold t shh 2 µs VB = 11V, Vcc = 5V, Io = 1.2A, Truth table 70 µs C1 = 0.033µF S/H settling time t stt VPWM L H VB = 11V, Vcc = 5V, Io = 1.2A, 80 µs C1 = 0.033µF, Ta = 125°C VOUT L H Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70kΩ typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics. 48

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Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A Features External Dimensions (unit: mm) ● DMOS 4ch output 12.2 ±0.2 ● Allows ON/OFF using C-MOS logic level +0.1 10.5 ±0.2 1.0 –0.05 ● Built-in overcurrent, overvoltage and thermal protection circuits Fin 16 9 thickness Absolute Maximum Ratings 7.5 ±0.2 (Ta=25ºC) Parameter Symbol Ratings Unit Conditions +0.2 2.0 –0.8 Power supply voltage VB 40 V Output terminal voltage VOUT 37 V * 1 8 +0.15 Input terminal voltage VIN –0.5 to +7.5 V 1.27±0.25 0.4 –0.05 2.5 ±0.2 +0.15 Output current IO 1.8 A 0.25 –0.05 Power Dissipation PD 2 W Storage temperature Tstg –40 to +150 ºC Channel temperature Tch 150 ºC Output avalanche capability EAV 50 mJ Single pulse Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics. Equivalent Circuit Diagram VB VOUT 1 Gate Protction Electrical Characteristics (VB =14V, Ta=25ºC unless otherwise specified) Reg. REF Ratings OVP Gate Driver Parameter Symbol Unit Conditions min typ max TSD OCP Power supply voltage VBopr 5.5 25 V P-GND VIN 1 Quiescent circuit current Iq 5 7 mA VIN = 0V (all inputs) 250 kΩ typ Operating circuit current ICC 8 12 mA VIN = 5V (all inputs) Hi output VIN 3.5 5.5 V IO = 1A Input voltage VIN 2 VOUT 2 Lo output VIN –0.5 1.5 V Hi output I IN 50 µA VIN = 5V VIN 3 VOUT 3 Input current Lo output I IN 30 µA VIN = 0V VIN 4 VOUT 4 0.4 0.6 Ω Output ON resistance RDS (ON) 0.5 0.7 Ω VB = 5.5V L-GND Output clamp voltage VOUT (clamp) 41 50 55 V IO = 1A Output leak current I OH 10 µA VO = 37V Forward voltage of output stage diode VF 1.6 V I F = 0.5A Circuit Example Overvoltage protection starting VB (ovp) 25 40 V voltage Thermal protection starting VCC TTSD 151 165 ºC temperature 2 10 7 15 5 Overcurrent protection starting OUT1 OUT3 OUT2 OUT4 VB IS 1.1 A 4 current IN1 6 IN2 TON 12 µs RL = 14Ω, I O = 1A 12 IN3 SPF5002A Output transfer time 14 IN4 TOFF 8 µs RL = 14Ω, I O = 1A L-GND P-GND CONTROL UNIT Output rise time Tr 5 µs RL = 14Ω, I O = 1A 13 1,9 Output fall time Tf 10 µs RL = 14Ω, I O = 1A Use L-GND and P-GND being connected. Truth table VIN VO H L L H Timing Chart OVP VB VOUT VIN Normal Overvoltage Overheat Overcurrent * Self-excited frequency is used in the overcurrent protection. 50

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A Electrical Characteristics ■ Quiescent Circuit Current ■ Circuit Current (single circuit) ■ Circuit Current (4 circuits) 10 10 10 8 8 8 Ta = 25ºC Ta = 25ºC Ta = 25ºC Ta = –40ºC Ta = –40ºC Ta = –40ºC 6 6 6 Iq (mA) Id (mA) Id (mA) Ta = 125ºC 4 4 4 Ta = 120ºC Ta = 125ºC 2 2 2 0 0 0 0 10 20 30 40 0 10 20 30 40 10 20 30 40 VB (V) VB (V) VB (V) ■ Threshold Input Voltage ■ Output ON Voltage ■ Forward Voltage of Output Stage Diode 15 1.0 1.5 VB = 14V 0.8 Ta = 125ºC Ta = –40ºC Ta = 25ºC Ta = 25ºC Ta = –40ºC 10 1.0 Ta = 125ºC VDS (ON) (V) 0.6 Ta = 125ºC VO (V) I F (A) Ta = 25ºC 0.4 5 0.5 0.2 VO = 14V IO = 0.1A Ta = –40ºC 0 0 0 0 1 2 3 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 VIN (th) (V) IO (A) VF (V) ■ Overcurrent Protection Characteristics ■ Overvoltage Protection Starting Voltage 15 15 VB =14V IO = 0.1A Ta = –40ºC 10 10 Ta = 25ºC Ta = 125ºC VO (V) VO (V) 5 5 Ta = 120ºC Ta = 25ºC Ta = –40ºC 0 0 0 1.0 2.0 0 10 20 30 40 IO (A) VB (V) 51

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development) Features External Dimensions (unit: mm) ● DMOS 4ch output 17.28 ±0.2 +0.1 ● Allows ON/OFF using C-MOS logic level 15.58 ±0.2 1.0 –0.05 Fin ● Built-in over current and thermal protection circuit and diagnostic function to 24 13 thickness detect open load ● Built-in output status signals (over current, over heat and open load) a 10.5 ±0.3 7.5 ±0.2 b +0.2 2.0–0.8 Absolute Maximum Ratings (Ta=25ºC) 1 12 Parameter Symbol Ratings Unit Conditions +0.15 1.27 ±0.25 0.4 –0.05 2.5 ±0.2 Power supply voltage VB 40 V +0.15 Output terminal voltage (DC) VOUT 50 V 0.25–0.05 Output terminal voltage (pulse) VOUT Output clamping (max 70V) V a : Part No. Output current (DC) IOUT ±2.9 A b: Lot No. Output current (pulse) IOUT Over current protection starting current A Input terminal voltage V( IN, SEL, B/U) –0.5 to +6.5 V Equivalent Circuit Diagram Diag output source current VDIAG 6.5 V VB Gate Protection VOUT1 (7) (4) Diag output voltage I DIAG 5 mA Ref Reg Power Dissipation PD 2.8 W Gate driver VIN B/U (17) Storage temperature Tstg –40 to +150 ºC TSD VOUT Channel temperature Tch 150 ºC VIN SEL SENSE (5) Output avalanche capability EAV 80 mJ Single pulse OUT OCP Set Latch Reset P-GND1 VIN 1 (1, 2) (6) OSC VDIAG1 Monitor (3) VOUT2 (9) Electrical Characteristics (VB =14V, Ta = 25ºC unless otherwise specified) VIN 2 P-GND2 (8) (11, 12) Ratings VDIAG2 Parameter Symbol Unit Conditions (10) min typ max VOUT3 (16) Power supply voltage VB (opr) 5.5 40 V VIN 3 P-GND3 (18) (13, 14) Quiescent circuit current Iq 9 12 mA VB =14V, VIN=0V VDIAG3 (15) Operating circuit current Id 12 15 mA VB =14V, VIN=5V (all inputs) VOUT4 (21) Input voltage VIN (H) 3.5 6.5 V VB =14V, VO=1A VIN 4 P-GND4 (20) (23, 24) (1 to 4, SEL, B/U) VIN (L) –0.5 1.5 V VB =14V VDIAG4 (22) Input current (single circuit) I IN (H) 200 µA VB =14V, VIN=5V L-GND (19) (1 to 4, SEL, B/U) I IN (L) 30 µA VB =14V, VIN=0V Output ON resistance RDS (ON) 0.18 Ω VB =14V, IO=1A Output clamp voltage VOUT (clamp) 60 65 70 V VB =14V, IO=1A Output leak current I OH 50 µA VB =14V, VO=50V Circuit Example Forward voltage of output stage diode VF 1.5 V I F =1A Output moniter threshold voltage Vt hM 2 V VB =14V VDIAG (H) 6.4 6.5 V VB =14V, VDIAG=6.5V 7 4 9 16 21 DIAG output voltage VDIAG (L) 0.5 V VB =14V, IDIAG=5mA VB OUT1 OUT2 OUT3 OUT4 6 VIN1 8 3 DIAG output leak current I DH 10 µA VB =14V, VDIAG=6.5V 18 VIN2 DIAG1 10 VIN3 DIAG2 Thermal shutdown operating temperature TTSD 151 165 ºC VB =14V 20 VIN4 SPF5009 DIAG3 15 17 22 VINB/U DIAG4 5 Overcurrent protection starting current IS 3.0 A VB =14V VINSEL LG PG1 PG2 PG3 PG4 TON 12 µs VB =14V, RL=14Ω, I O=1A 19 1, 2 11, 12 13, 14 23, 24 Output transfer time TOFF 8 µs VB =14V, RL=14Ω, I O=1A Output rise time Tr 5 µs VB =14V, RL=14Ω, I O=1A Output fall time Tf 10 µs VB =14V, RL=14Ω, I O=1A t DON 12 µs VB =14V, RL=14Ω, I O=1A Timing Chart DIAG output transfer time t DOFF 8 µs VB =14V, RL=14Ω, I O=1A Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1 OCP OCP Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal Output 1 Output 1 Output 1 Nomal Output 1 Output 1 Output 1 Overheat Over current Open load Overheat Over current Open load Main mode Backup mode 52

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Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012 Features External Dimensions (unit: mm) 17.28 ±0.2 ● Output monitor circuit (DIAG) +0.1 15.58 ±0.2 1.0 –0.05 ● DMOS 4ch output Fin 24 13 ● Allows ON/OFF using C-MOS logic level thickness ● Built-in overcurrent, overvoltage and thermal protection circuits a 10.5 ±0.3 7.5 ±0.2 b 2 ±0.2 Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Ratings Unit Conditions 1 12 +0.15 Power supply voltage 1 VB 40 V 1.27 ±0.25 0.4 –0.05 2.5 ±0.2 +0.15 Power supply voltage 2 VCC 7.5 V 0.25–0.05 Output voltage VO 40 (DC) V *1 Logic input voltage VIN –0.5 to +7.5 V a : Part No. b: Lot No. Output current IO Self Limited A Diag output voltage VDIAG 0 to VCC V Power Dissipation PD 2.8 to 5 W *2 Equivalent Circuit Diagram Storage temperature Tstg –40 to +150 ºC VCC1-2 (7) Channel temperature Tch 150 ºC Diag1 (5) Output avalanche capability EAV 100 mJ Single pulse VB (19) Gate Protection VOUT1 * 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics Reg (3) * 2. Changes by the patern of mounted substrate OVP TSD Gate driver VIN1 (4) OCP P. GND1 (1, 2) Ch1 Electrical Characteristics (VB =14V, Ta = 25ºC unless otherwise specified) Diag2 (8) Ratings VIN2 VOUT2 Parameter Symbol Unit Conditions (9) (10) min typ max P. GND2 Ch2 (11, 12) Operating power supply voltage 1 VB (opr) 5.5 40 V VCC3-4 (18) Operating power supply voltage 2 VCC (opr) 4.5 5.5 V Diag3 (17) VIN3 VOUT3 Quiescent circuit current Iq 4 6 mA VB =14V, VIN=0V (16) (15) P. GND3 Ch3 (13, 14) Operating circuit current Id 8 12 mA VB =14V, VIN=5V Hi output VIN 3.5 5.5 V VB =14V, VO=1A Diag4 Input voltage (20) VIN4 VOUT4 Lo output VIN –0.5 1.5 V VB =14V (21) (22) P. GND4 Hi output I IN 50 µA VB =14V, VIN=5V Ch4 (23, 24) Input current L. GND (6) Lo output I IN –30 µA VB =14V, IO 1A 0.3 Ω VB =14V, IO=1A, Ta=125ºC Output ON resistance RDS (ON) 0.2 Ω VB =14V, IO=1A, Ta=25ºC Output clamp voltage VOUT (clamp) 45 50 55 V VB =14V, IO=1A Circuit Example VB =14V, VCC=5V, VIN=0V, 2.8 mA VO =40V, Ta=25ºC Output leak current I OH VB =14V, VCC =5V, VIN=0V, 900 µA 7 18 19 3 10 15 22 VO =14V, Ta=25ºC VCC1-2 VCC3-4 VB VOUT1 VOUT2 VOUT3 VOUT4 Forward voltage of output stage diode VF 1.6 V I F=1A Diag1 4 VIN1 5 VCC 9 VIN2 Diag2 8 Diag Input Overvoltage protection starting voltage VB (ovp) 25 40 V signal 16 VIN3 SPF5012 Diag3 17 output 21 VIN4 Diag4 20 Overvoltage protection hysteresis voltage VB (ovp•hys) 8 V L-GND P-GND1 P-GND2 P-GND3 P-GND4 6 1, 2 11,12 13,14 23,24 Thermal shutdown operating temperature TTSD 151 165 ºC VB =14V 6 A VB =14V, Ta=–40ºC Overcurrent protection Truth table operating current IS 6 A VB =14V, Ta=25ºC VIN VO 5 A VB =14V, Ta=125ºC Short L-GND and P-GND H L in a pattern near the product. TON 12 µs L H Output transfer time TOFF 8 µs VB=14V, RL=14Ω, I O=1A Output rise time Tr 5 µs Output fall time Tf 10 µs ra (DIAG) 0.195 0.2 0.205 VB =14V, VO =1 to 14V, Rdiag=500kΩ Timing Chart Output-diag voltage ratio Diag output clamping voltage VDIAG (clamp) 4.85 V VB=14V, VCC=5V, VO =40V OVP VB VOUT VIN Normal Overvoltage Overheat Overcurrent 54 * Self-excited frequency is used in the overcurrent protection.

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Stepper-motor Driver ICs SLA4708M Features External Dimensions (unit: mm) ● High output breakdown voltage of 50V 31.0±0.2 Ellipse 3.2±0.15 • 3.8 ● Affluent output current of 1.5A 3.2±0.15 24.4±0.2 4.8±0.2 ● Built-in overcurrent, overvoltage and thermal protection circuits 16.4 ±0.2 1.7±0.7 ● Low standby current of 50µA Lead plate thickness resins 0.8 max 16.0±0.2 13.0±0.2 8.5max 9.9±0.2 a Absolute Maximum Ratings (Ta=25ºC) b 9.5min (10.4) Parameter Symbol Ratings Unit Conditions 2.7 Pin 1 12 Power supply voltage VS 35 V +0.2 0.85 –0.1 +0.2 0.55 –0.1 2.2±0.7 1.2±0.15 ±0.15 Breakdown voltage VO 50 V 1.45 ±0.7 ±1.0 Input voltage VIN –0.3 to +7 V 11•P2.54 =27.94 Output current IO, AVE 1.5 A 31.5 max Diagnostic output sink current IDIAG 10 mA a: Part No. Diagnostic output withstand voltage IDIAG. H 7 V 1 2 3 4 5 6 7 8 9 10 11 12 b: Lot No. Operating temperature Top –40 to +85 ºC Storage temperature Tstg –40 to +150 ºC Power Dissipation PD 3.5 (Ta=25ºC) W Without heatsink Standard Circuit Diagram Electrical Characteristics (VS =12V, Ta=25ºC) + C ZD Ratings Parameter Symbol Unit Conditions min typ max Input voltage VIL 0.8 V 4 5 9 8 1 (I A/A, I B/B standby) VIH 2.4 V OUTA OUT A OUT B OUT B VS 12 DIAG I IL –0.8 mA VIN = 0.4V I 3 A /A Input current SLA4708M CPU ZD: VS <35V I IH 50 µA VIN = 2.4V I B/B 10 C 100µF STBY 5V 2 P-GND (Reference) L-GND L-GND VO.STA 1.3 V I O = 1A, Ta = 25ºC 4.7 kΩ 6 11 7 Stepper Output saturation voltage N.C. VO.STA 1.5 V I O = 1.5A, Ta = 25ºC motor Output leak current I O.LEAK 100 µA VO = 16V Overcurrent detection I SD 1.8 A Overvoltage detection VSD 27.5 V Saturation voltage of diagnostic VDIAG.L 0.3 V I DIAG = 5mA output Standby current I STB 50 µA VS = 12V 56

Stepper-motor Driver ICs SLA4708M Electrical Characteristics ■ Power Supply Current Characteristics ■ Overvoltage Protection Characteristics ■ Saturation Voltage of Output Transistor Characteristics 20 Saturation voltage of output transistor Vsat (V) 200 14 2.0 Constant (ST = 5V) Ta = 25ºC Vcc (Vs) =16V Common for Vcc=12V Ta =25ºC all phases 12 Common for 1.5 Output voltage VO (V) Power supply current 10 At Constant IS (mA) all phases At standby IS (µA) 8 100 10 6 1.0 4 At standby (ST = 0V) 0.5 2 0 0 0 0 0 10 20 30 0 10 20 30 35 0 1.0 2.0 3.0 Power supply voltage VS (V) Power supply voltage VS (V) Output current IO (A) ■ Thermal Protection Characteristics 14 Vcc (Vs) =12V 12 VST = 5V Output voltage VO (V) 10 8 T j2 T j1 6 4 2 0 0 110 120 130 140 150 160 Junction temperature Tj (ºC) 57

2-ph Stepper-motor Driver ICs SPF7211 Features External Dimensions (unit: mm) ● Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) 17.28±0.2 +0.1 ● Built-in recovery diode 15.58±0.2 1.0 –0.05 Fin ● Built-in standby function 24 13 thickness ● Built-in overcurrent and thermal protection circuits and low voltage input shutoff function ● Built-in overload and disconnection detection function a 10.5±0.3 7.5±0.2 Absolute Maximum Ratings b 2±0.2 Parameter Symbol Ratings Unit Remarks 1 12 Main power supply voltage VBB 40 V +0.15 Input voltage VIN –0.3 to 15 V VIN VBB 1.27±0.25 0.4 – 0.05 ±0.8 2.5±0.2 Io Output current A +0.15 IoPeak ±1.0 Tw 1mS 0.25– 0.05 Flag terminal withstand voltage VFlag 7 V VFlag VBB Flag terminal current IFlag 3 mA Detect voltage VRs –2 to 2 V a) Part No. 4.1 For Ta = 25°C * 1 Power dissipation PD W b) Lot No. 39 For Tc (Ttab) = 25°C Junction temperature Tj 150 °C Operating temperature Top –40 to 110 °C Storage temperature Tstg –40 to 150 °C Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm) Standard Circuit Diagram Recommended Operation Range Parameter Symbol Ratings Unit Remarks Rs Main power supply voltage VBB 6 to 18 V Input voltage VIN –0.3 to 7.0 V VIN VBB I20 24 Out2B 13 Output current Io ±0.5 A Continuous I21 Ph2 FL1 GND GND GND GND Out2A Rs2 FL2 Flag terminal withstand voltage VFlag 0 to 7.0 V VFlag VBB Flag terminal current IFlag 0 to 1.0 mA µPC Detect voltage VRs –1 to 1 V (ECU) SPM Operating temperature Top –40 to 110 °C 12 Out1B Out1A GND GND GND Ph1 Rs1 VBB Set 1 I10 I11 Ct Electrical Characteristics Ratings Rs Parameter Symbol min typ max Unit Conditions Ct VBB = 6 to 18V IBB 50 mA In ordinary operation (no load) 2200pF Main power supply current + IBBS 50 µA At sleep Rs 1Ω typ (1 to 2W) Low voltage protection operation voltage VUVLO 3.5 4.5 V IoM VRs/Rs UVLO hysteresis voltage VUVLOhys 0.5 V IoleakL –100 µA VBB = 40V, Vo = 0V Output leak current IoleakH 100 µA VBB = Vo = 40V Excitation Signal Time Chart 0.5 V Io = 0.5A 2-phase excitation VsatL Clock 0 1 2 3 0 1 0.8 V Io = 0.8A Output saturation voltage Ph1 L H H L L H 1.2 V Io = –0.5A VsatH I10, I11 H H H H H H 1.5 V Io = –0.8A Ph2 L L H H L L V FL 1.2 V Io = 0.5A I20, I21 H H H H H H Recovery diode forward voltage V FH 1.3 V Io = –0.5A VFGO 1.2 V Io = –0.5A 1 to 2-phase excitation VIL 0.8 V Clock 0 1 2 3 4 5 6 7 0 1 2 3 Input voltage Ph1 L H H H H L L L L H H H Input terminal VIH 2.0 V Hysteresis voltage VIhys 0.5 V I10, I11 H L H H H L H H H L H H Ph2 L L L H H H H L L L L H IIL –5 5 µA Ph terminal Input current I20, I21 H H H L H H H L H H H L IIH –5 5 µA * For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph IIL –30 µA VIL = 0.8V excitation (Ixx turns from high to low). Ixx, Set terminals Input current IIH 50 µA VIH = 2.0V The OPEN detection function is invalid except in this sequence. 660 700 740 mV Ix0 = High, Ix1 = High Detect voltage VRs 420 450 480 mV Ix0 = Low, Ix1 = High 40 70 90 mV Ix0 = High, Ix1 = Low Oscillation frequency Fosc 28.8 48 72 kHz Ct = 2200pF±20% PWM frequency FPWM 14.4 24 36 kHz Ct = 2200pF±20% VctL 0.5 V Ct terminal threshold voltage VctH 1.5 V Ictsink 720 µA *1 Ct terminal current Ictsouce –120 µA VocpL 1.5 3.0 4.2 V Out voltage VocpH VBB–2.5 VBB–2.0 VBB–1.7 V Out voltage Overcurrent detection voltage VocpL 1.0 1.85 V VBB = 5.5V VocpH VBB–2.3 VBB–1.5 V VBB = 5.5V Open detection voltage Vopen –60 mV Sence voltage Flag terminal leak current IleakFlag 10 µA VFlag = 7V Flag terminal saturation voltage VFlagL 0.5 V IFlag = 1mA Flag terminal current IFlag 3 mA Response pulse Tpw 10 µS In ordinary operation width Tpws 100 µS At sleep Set terminal Pulse rate Fclock 17 24 31 Hz Ct = 2200pF Pulse number Pulse 256 — tocp1 2.5 5.0 10.0 µS In ordinary operation; Ct = 2200pF OCP operation tocp2 5.0 10.0 20.0 µS At switching the phase Flag response tocp3 5.0 10.0 20.0 µS When Ixx shifts from L to H time topen1 2.5 5.0 10.0 µS In ordinary operation Open operation topen2 2.5 5.0 10.0 µS When Ixx shifts from L to H tonH1 1.5 µS toffH1 1.5 µS tonH2 100 µS toffH2 100 µS I/O propagation time tonL1 2.0 µS toffL1 0.5 µS tonL2 100 µS toffL2 100 µS Thermal protection temperature Tj 150 °C Thermal protection hysteresis ∆Tj 20 °C Thermal alarm temperature Talarm 120 130 140 °C *2 Thermal alarm hysteresis ∆Talarm 20 °C Note: 58 *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values.

2-ph Stepper-motor Driver ICs SPF7211 Electrical Characteristics ■ Vsat Temperature Characteristics (Io=0.5A) ■ Diode VF Characteristics (IF=0.5A) 1.2 1.7 VsatH VFGO 1 1.5 Saturation voltage Vsat (V) Forward voltage VF (V) 0.8 1.3 0.6 1.1 VFH 0.4 VsatL 0.9 VFL 0.2 0.7 0 0.5 –30 –10 10 30 50 70 90 110 130 150 –30 –10 10 30 50 70 90 110 130 150 Junction temperature (ºC) Junction temperature (ºC) ■ OSC Temperature Characteristics ■ Ta-PD Characteristics 55 40 Infinite heatsink equivalent (Tc=25°C) Oscillation frequency FOSC (kHz) j-tab 3.2°C/W 53 Power dissipation PD (W) FOSC 30 51 20 49 10 Copper foil area 47 (5.0•7.4mm, t=18µm) j-a 30.5°C/W Ct=2200pF 45 0 –30 –10 10 30 50 70 90 110 130 150 0 25 50 75 100 125 150 Junction temperature (ºC) Ambient temperature Ta (ºC) 59

Full Bridge PWM Control DC Motor Driver ICs SI-5300 Features External Dimensions (unit: mm) ● P-ch MOS for high side and N-ch MOS for low side in one package (28.4) 4.8±0.2 ● Enable to drive DC±5V ● Possible to drive a motor at the LS-TTL, C-MOS Logic level 2.7±0.2 ● Guarantee Tj=Tch=150°C 16.1±0.2 ● Built-in over current protection and thermal shut down circuits a ● Built-in diagnosis function to monitor and signal the state of each protection circuits b (4.5) (R0.8) ● Built-in vertical current prevention circuits (Dead time is defined internally.) (4) 7.6±0.5 ● No insulator required for Sanken's original package (SPM package) R-end (R0.8) 3.6±0.5 +0.2 0.75–0.1 +0.2 0.45–0.1 14 • P2.03±0.1=(28.42) 2±0.5 Absolute Maximum Ratings 35±0.3 (Ta=25ºC) 4.5±0.7 Parameter Symbol Ratings Unit Conditions Motor supply voltage VM 40 V a: Part No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 b: Lot No. IN1 –0.3 to 7 V Input terminal voltage IN2 –0.3 to 7 V PWM –0.3 to 7 V Equivalent Circuit IO ±5 A Output current VM VM VM IO (p-p) ±17 A PW 1ms, Duty 50% B B PWM control frequency fPWM 20 kHz Duty=20% to 80% Pre-Rec OCP OCP Pch1 Pch2 Forward • reverse rotation switch frequency* fCW 500 Hz TSD A OUT1 B A FF B Operating temperature TOP –40 to +85 ºC Q S R M ECU inside VCC Junction and channel temperature Tj, Tch –40 to +150 ºC PULL-UP Dead Resistor IN1 Time OUT2 DIAG Storage temperature Tstg –40 to +150 ºC Nch1 Nch2 PWM A DIAG down A j-c 3.7 ºC/W PWM edge CONTROL sense Thermal resistance OCP OCP TDIAG j-a 35 ºC/W B B CDIAG Dead 1µF IN2 Time A PD1 3.6 W Without heatsink Power dissipation A LGND PD2 33.7 W With infinite heatsink PGND PGND Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20µs (typical). Please take into account the dead time and consider the load conditions when you use the IC. Standard Connection Diagram Relay Electrical Characteristics (Unless, otherwise specified, Tj=Tch=25°C, VM =14V, IO =3A) Capacitor + 3, 5, 13 VM 1, 2 Ratings 220µF OUT1 Parameter Symbol Unit Conditions min typ max Battery 6 IN1 14, 15 Motor supply voltage VIN 6 18 V VM=24V (2 min.) OUT2 V, VM-VO 0.8 V IO=3A CPU 11 IN2 M Output saturation voltage V, VO-PG 0.3 V IO=3A 7 PWM SI-5300 10 DIAG I L, L 100 µA VM=40V Output leakage current I L, H 100 µA VM=40V VCC 8 9 4,12 Pull-up Resistor tpLH 10 2 * µs VPWM: L H (Vth=2.5V typ) 10kΩ TDIAG LGND PGND (Open Collector) Delay Capacitor Output transmission time tpHL 15 *3 µs VPWM: H L (Vth=2.5V typ) 1µF tpHL-tpLH 10 µs 0.8 V IO=3A Forward voltage VF •L 1.0 V IO=10A characteristic of diode between drain and source 0.8 V IO=3A VF •H 1.0 V IO=10A Timing Chart Forward Forward Reverse Reverse Stop Stop IM1 22 mA Stop mode Duty ON Duty OFF Duty ON Duty OFF (Free Run) (Free Run) Breake Breake Therminal name Static circuit current IM2 22 mA Forward and reverse mode IN1 IM3 16 mA Brake mode IN2 VIN, H 3.0 V VIN1=VIN2=VPWM Input terminal voltage PWM VIN, L 2.0 V VIN1=VIN2=VPWM High inpidance IIN, L –100 µA VIN1=VIN2=VPWM=0V OUT1 Input terminal current High inpidance IIN, H 200 µA VIN1=VIN2=VPWM=5V OUT2 1 OPC start current IOCP 16 A * GND IOUT (A) High inpidance DIAG output pulse width t DIAG 20 ms C=1µF (typ) DIAG terminal voltage VD •L 0.3 V ID • SINK=1mA *4 Protection circuit Return to constant action Note: VM=2V *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the VM=2V protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ➞ 0V: L) is input to the VM terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). IN1 It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time. IN2 *2: Output transmission time (tpLH) *3: Output transmission time (tpHL) PWM VPWM (5V) VPWM (5V) VM-OUT1 PWM terminal (Pch1 VDS) PWM terminal Vth Vth Output transmission Output transmission VM-OUT2 VOUT (Pch2 VDS) GND time tpLH is time from time tpHL is time from GND VOUT1-GND VOUT*0.9 Vth (2.5V typ) of the Vth (2.5V typ) of the (Nch1 VDS) OUT terminal terminal of PWM to OUT terminal terminal of PWM to VOUT2-GND VOUT *0.1 (Nch2 VDS) output (VOUT *0.9) of output (VOUT *0.1) of GND OUT1 tpLH the output terminal. tpHL GND the output terminal. OUT2 *4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit. IOUT (A) TDIAG DIAG DIAG Threminal 20ms 60 VCC=5V Pull-up (min)

Full Bridge PWM Control DC Motor Driver ICs SI-5300 Electrical Characteristics ■ Output saturation voltage (Pch) ■ Output saturation voltage (Nch) ■ Forward voltage of Diode between drain and source 1.0 0.5 12 VM=14V VM=14V Ta=25ºC 10 0.8 0.4 Ta=150ºC Nch 8 MOS FET Ta=150ºC Ta=85ºC V•VO -PG (V) V•VM -VO (V) 0.6 0.3 Ta=25ºC I FSD (A) Ta=85ºC 6 Ta=25ºC Ta=–40ºC 0.4 Ta=–40ºC 0.2 Pch 4 MOS FET 0.2 0.1 2 0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 I O (A) I O (A) VFSD (V) ■ Quiescent circuit current ■ Voltage of input terminal (Threshold voltage) ■ Current of input terminal (SINK current) 25 16 0.6 Duty on VM=14V VM=14V Brake 0.5 20 12 Duty off Ta=150ºC 0.4 15 Ta=85ºC I SINK (mA) Stop Ta=150ºC I M (mA) VO (V) Ta=25ºC 8 Ta=25ºC 0.3 Ta=–40ºC 10 Ta=–40ºC 0.2 4 5 0.1 I O=0A Ta=25ºC 0 0 0 0 10 20 30 40 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 VM (V) VIN1, IN2, PWM (V) VIN1, IN2, PWM (V) ■ Current of input terminal (Source current) ■ VTDIAG – VDIAG Characteristics ■ Thermal shut down protection Pull-up resistance =3kΩ –12 6 6 I IN1=I IN2=PWM=0V VM=14V VM=10V I O=0A –10 5 5 Ta=150ºC IIN1, IIN2, PWM source (µA) Ta=25ºC –8 4 Ta=150ºC 4 Ta=–40ºC Ta=25ºC VDIAG (V) VDIAG (V) Ta=–40ºC –6 3 3 –4 2 2 –2 1 1 0 0 0 0 10 20 30 40 0 1 2 3 4 5 6 100 125 150 175 200 VM (V) VTDIAG (V) Ta (ºC) ■ Pch MOS FET Safe Operating Area (SOA) ■ Nch MOS FET Safe Operating Area (SOA) ■ PD —Ta Characteristics 100 100 40 Tc=25ºC Tc=25ºC Allowable Power Dissipation PD (W) 35 Infinite heatsink (Tc =25ºC) 1ms 1ms 30 10ms 25 10 10 I OUT (A) I OUT (A) 10ms 20 100ms 15 100ms 10 1 1 5 No heatsink 0.3 0.3 0 2 10 40 100 2 10 40 100 –40 –30 0 25 50 75 100 VM-OUT (V) VOUT -PG (V) Ambient temperature Ta (ºC) 61

Full Bridge DC Motor Driver ICs SPF7301(under development) Features External Dimensions (unit: mm) ● A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side +0.1 14.74±0.2 1.0 –0.05 power elements Fin ±0.2 thickness ● Two input signals control the forward/reverse/brake of a DC motor 13.04 ● Current limit and overcurrent protection circuits 20 11 ● Low voltage and thermal protection, excess input detecting output and input 10.5±0.3 terminal open protection a 7.5±0.2 b 2±0.2 Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Ratings Unit Remarks 1 10 +0.15 +0.15 0.25–0.05 Main power supply voltage VB –0.3 to 36 V 1.27±0.25 0.4 – 0.05 2.5±0.2 Input terminal input voltage VIN1,VIN2 –0.3 to 6 V EN terminal voltage VEN –0.3 to 12 V Disable terminal input voltage VDI –0.3 to 6 V Io ±7 A a) Part No. Output current b) Lot No. IoPeak ±15 A 1kHz, Duty 1%, Pulse 10µS DIAG output current VDIAG –0.3 to 6 V DIAG inflow current IDIAG –3 mA DIAG terminal sink current P D1 39 W With an infinite heatsink mounted Power dissipation P D2 4 W *1 Junction temperature Tj –40 to 150 °C Operating temperature Top –40 to 105 °C Storage temperature Tstg –40 to 150 °C Thermal resistance (junction to case) j-c 3.2 °C/W Standard Circuit Diagram Thermal resistance (junction to ambient air) j-a 31 °C/W Vcc EN CP Ccp RDIAG Note: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm) VB DIAG Power IN1 supply Full Brige Driver IC OUT1 Recommended Operation Range IN2 DI SFP7301 M Parameter Symbol Ratings Unit Remarks OUT2 R1 Main power supply voltage VB 8 to 18 V Cin R2 RDI DI terminal input voltage VDI –0.3 to 5.3 V PGND LGND Input terminal input voltage VINx –0.3 to 5.3 V Output current Io ±1 A DIAG terminal voltage VDIAG –0.3 to 5.3 V Operating temperature Top –40 to 105 °C * Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20kΩ Input terminal pull-down resistance R1, R2, RDI: 10kΩ (Tj = 30 to 125°C, VB = 14V, EN = DI = 5V, Ccp = 33nF, Electrical Characteristics RDIAG = 20kΩ unless otherwise specified) * 2 Ratings Parameter Symbol Unit Conditions min typ max IBB1 15 mA Main power supply current IBB2 100 µA For VEN = 0V Low voltage protection VuvloH 5.0 7.0 V operation voltage VuvloL 4.5 6.5 V UVLO hysteresis voltage ∆UVLO 0.5 V IleakHS –100 µA Output terminal leak current IleakLS 100 µA RDS(ON)_1H 100 200 mΩ RDS(ON)_2H 100 200 mΩ Output DMOS RDS (ON) RDS(ON)_1L 100 200 mΩ RDS(ON)_2L 100 200 mΩ VF_H1 1.5 V Io1 = 1A Forward voltage VF_H2 1.5 V Io2 = 1A characteristics between output DMOS and DS VF_L1 1.5 V Io1 = –1A VF_L2 1.5 V Io2 = –1A Iocp1_H1 4.5 7 10 A Overcurrent limiting Iocp1_H2 4.5 7 10 A operation current Iocp1_L1 4.5 7 10 A Iocp1_L2 4.5 7 10 A Iocp2_H1 15 A Iocp2_H2 15 A OPC start current Iocp2_L1 15 A Iocp2_L2 15 A Input terminal voltage VINxH 2 V VIN1, VIN2 VINxL 0.8 V Input terminal current IINxH –100 µA VDI = 5V VIN1, VIN2 IINxL –100 µA VDI = 0V VDIxH 2 V DI terminal voltage VDIxL 0.8 V IDIxH –100 µA VDI = 5V DI terminal current IDIxL –100 µA VDI = 0V EN terminal input voltage VENth 0.8 4 V IENH 100 µA VEN = 5V EN terminal input current IENL –10 10 µA VEN = 0V DIAG terminal output voltage VDIAG 0.8 V IDIAG = 0.5mA DIAG terminal output current IDIAG 1.5 mA For VDIAG = 1.6V DIAG terminal leak current IDIAGL –10 15 µA TdON 20 µS Time from VINxH to Voutx•0.2 TdOFF 15 µS Time from VINxL to Voutx•0.8 Input delay time Tr 6 µS Time of Voutx from 20% to 80% Tf 6 µS Time of Voutx from 80% to 20% Tddis 4 µS Time from DIthH to Voutx•0.2 Overvoltage protection operation voltage VOVP 35 40 45 V OVP hysteresis width ∆VOVP 5 V Thermal protection starting temperature Ttsd_ON 151 165 °C *3 Thermal protection hysteresis width ∆Ttsd 15 °C *3 Note: *2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values. 62 *3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.

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High Voltage Full Bridge Drive ICs SLA2402M Features External Dimensions (unit: mm) ● One Package Full Bridge Driver Consisted of High Voltage IC and Power 31.0 ±0.2 MOS FETs (4 pieces) 3.2 ±0.15 24.4 ±0.2 Ellipse 3.2 ±0.15 •3.8 4.8±0.2 ● High Voltage Driver which accepts direct connection to the input signal line 16.4 ±0.2 1.7±0.1 ● External components such as high voltage diodes and capacitors are not required Lead plate thickness resins 0.8 max 16.0±0.2 13.0±0.2 8.5 max a 9.9±0.2 b Absolute Maximum Ratings 9.5 min 2.7 Parameter Symbol Ratings Unit Conditions +0.2 +0.2 Power source voltage * VM 500 V 0.65 –0.1 1.0 –0.1 2.45±0.2 +0.2 Input voltage 17• P1.68 ±0.1 =28.56 0.55 –0.1 VIN 15 V Output voltage VO 500 V 31.5 max Output current IO 15 A PW 250µs a: Part No. Power dissipation PD 5 (Ta=25ºC) W Without heatsink b: Lot No. Storage temperature Tstg –40 to +125 ºC Operation temperature Topr –40 to +105 ºC * Power GND (D terminal) to -HV (-HV terminal) voltage. Block Diagram Electrical Characteristics Ratings Parameter Symbol Unit Conditions min typ max 7 +12V Power MOS FET output BVOUT 500 V IO=100µA 4 D1 MOSQ1 VCC MOSQ2 15 breakdown voltage HO1 HO2 OUT1 MIC OUT2 Power MOS FET output MOSQ'1 MOSQ'2 IOUT (off) 100 µA VO=500V 2 LO1 LO2 17 leakage voltage GL1 VIN1 –HV VIN2 L GND GL2 VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VIN=10V High-side Power MOS FET output on-state voltage VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VIN=10V 3 6 8 10 9 11 13 16 VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VGL=10V CPU Low-side Power MOS FET output on-state voltage VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VGL=10V * Dotted Line: Outside Connection ICC 1 3.0 mA VCC=4.5 to 15V Quiescent circuit current ICC 2 4.0 mA VCC=10V, VM=400V Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V VIH 0.8VCC V VCC=4.5 to 15V Input voltage (High level) Timing Chart Input voltage (Low level) VIL 0.2VCC V VCC=4.5 to 15V t d (on) 1.4 µs VCC=10A, VIN=10V, Ignition OSC 400Hz Delay time * t d (off) 3.3 µs VM=85A, VCC ∆t 2.5 µs IO=0.41A IN1 Operating voltage VCC 15 V –40 to +105ºC IN2 * About delay time HO1 Signal input waveform vs output waveform LO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off HO2 VIN1 VIN1 10% 10% 10% 10% 0V 0V LO1 —HV 0V 0V 0V 10% 10% –100V 10% VOUT2 VOUT1 10% OUT2-GND –400V td (on) td (on) td (on) td (on) * ∆t: ∆t = td (on) – td (off) Measurement Circuit Conditions VCC=10V, VIN=10V (pulse) VIN1 RL VIN2 VM=85V IO=0.41A (RL=207Ω) VOUT1 VOUT2 * When pulse signal is inputted to VlN1, VIN2 VIN1 RL on solid line is ON and dotted line RL is off. VM On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. 64

High Voltage Full Bridge Drive ICs SLA2402M Electrical Characteristics ■ Quiescent circuit current ■ Quiescent circuit current supplied high voltage ■ Operating circuit current 3.0 3.0 3.0 150ºC VIN=0V VCC=VIN1(2)=10V VIN=0V 150ºC VCC=10V Operating circuit current ICC3 (mA) Quiescent circuit current ICC2 (mA) 105ºC Quiescent circuit current ICC1 (mA) 2.5 2.5 2.5 105ºC 2.0 25ºC 2.0 150ºC 2.0 105ºC 25ºC 1.5 1.5 1.5 –40ºC –40ºC 25ºC 1.0 1.0 1.0 –40ºC 0.5 0.5 0.5 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current ■ Operating circuit current 5 3.0 3.5 VIN=0V Ta=25ºC VCC= Ta=25ºC VCC= Operating circuit current ICC3 (mA) Quiescent circuit current ICC2 (mA) VM=400V 3.0 Quiescent circuit current ICC2 (mA) 2.5 15V 15V 4 150ºC 105ºC 2.5 2.0 3 12V 12V 2.0 25ºC 1.5 10V 1.5 2 10V 9V –40ºC 1.0 9V 1.0 1 0.5 0.5 4.5V 4.5V 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Output on-state voltage ■ Gate drive voltage ■ Gate drive voltage 10 10 10 Ta=25ºC VCC =VIN =10V VCC=10V Output on-state voltage (V) 8 8 8 VCC=15V Gate drive voltage VGL (V) Gate drive voltage VGL (V) VCC=9V 150ºC 6 6 6 105ºC 4 4 4 VCC= 4.5V 25ºC 2 2 2 –40ºC 0 0 0 0 1 2 3 4 –50 0 50 100 150 0 5 10 15 Output current (A) Ambient temperature (ºC) Input voltage VIN (V) ■ Output on-state voltage ■ Input threshold voltage 5 8 VCC=VIN=10V VCC=10V 7 Input threshold voltage VIH, VIL (V) VIH Output on-state voltage (V) 4 6 3 5 I O=2A 4 VIL 2 3 2 1 I O=0.4A 1 0 0 –50 0 50 100 150 –50 0 50 100 150 Ambient temperature (ºC) Ambient temperature (ºC) 65

High Voltage Full Bridge Drive ICs SLA2402M Electrical Characteristics ■ High side switch turn-on, off ■ High side switch turn-on, off ■ Low side switch turn-on, off 5.0 5.0 5.0 Ta=25ºC VM=85V, I O=0.41A Ta=25ºC VM=85V, I O=0.41A VCC=10V VM=85V, I O=0.41A 4.0 4.0 turn-off 4.0 turn-on, off (µs) turn-on, off (µs) turn-on, off (µs) turn-off turn-off 3.0 3.0 3.0 2.0 2.0 2.0 turn-on turn-on 1.0 turn-on 1.0 1.0 0 0 0 4 6 8 10 12 14 16 –50 0 50 100 150 4 6 8 10 12 14 16 Operation voltage VCC (V) Ambient temperature (ºC) Operation voltage VCC (V) ■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET) 5.0 100 100 VM=85V, I O=0.41A VCC=10V RDS (on) Transient thermal resistance (ºC/W) turn-off limited 4.0 10 10 100µs Drain current (A) turn-on, off (µs) 3.0 1 1ms 1 2.0 0.1 10ms turn-on 0.1 1.0 0.01 Ta=25ºC Ta=25ºC Single pulse Single pulse 0 0.001 0.01 –50 0 50 100 150 0.0001 0.001 0.01 0.1 1 10 100 10 100 1000 Ambient temperature (ºC) Power time (s) Drain to source voltage (V) ■ Power derating curve 6 without heatsink 5 Power dissipation (W) 4 3 2 1 0 –50 0 50 100 150 Ambient temperature (ºC) 66

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High Voltage Full Bridge Drive ICs SLA2403M Features External Dimensions (unit: mm) ● One Package Full Bridge Driver Consisted of High Voltage IC and Power 31.0 ±0.2 MOS FETs (4 pieces) 3.2 ±0.15 24.4 ±0.2 Ellipse 3.2 ±0.15 •3.8 4.8±0.2 ● High Voltage Driver which accepts direct connection to the input signal line 16.4 ±0.2 1.7±0.1 ● External components such as high voltage diodes and capacitors are not required Lead plate thickness resins 0.8 max 16.0±0.2 13.0±0.2 8.5 max a 9.9±0.2 b Absolute Maximum Ratings 9.5 min 2.7 Parameter Symbol Ratings Unit Conditions +0.2 +0.2 Power source voltage * VM 500 V 0.65 –0.1 1.0 –0.1 2.45±0.2 +0.2 Input voltage 17• P1.68 ±0.1 =28.56 0.55 –0.1 VIN 15 V Output voltage VO 500 V 31.5 max IO 7 A Tc=25ºC Output current a: Part No. IO (peak) 15 A PW 250µs b: Lot No. 5 (Ta=25ºC) W Without heatsink Power dissipation PD 40 (Tc=25ºC) W With infinite heatsink Storage temperature Tstg –40 to +125 ºC Operation temperature Topr –40 to +125 ºC Junction temperature Tj 150 ºC Block Diagram * Power GND (D terminal) to -HV (-HV terminal) voltage. 7 Electrical Characteristics 4 D1 MOSQ1 VCC MOSQ2 D2 15 HO1 HO2 Ratings 5 OUT1 MIC OUT2 14 MOSQ'1 MOSQ'2 Parameter Symbol Unit Conditions 3 LO1 LO2 16 min typ max GL1 VIN1 –HV VIN2 L GND GL2 Power MOS FET output BVOUT 500 V IO=100µA breakdown voltage Power MOS FET output IOUT (off) 100 µA VO=500V 2 6 8 10 9 11 13 17 leakage voltage CPU High-side Power MOS FET VOUT (on) 0.18 0.26 0.34 V IO=0.4A, VIN=10V * Dotted Line: Outside Connection output on-state voltage Lowside Power MOS FET VOUT (on) 0.18 0.26 0.34 V IO=0.4A, VGL=10V output on-state voltage ICC 1 3.0 mA VCC=6 to 15V Quiescent circuit current ICC 2 4.0 mA VCC=10V, VM=400V Timing Chart Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V Input voltage (High level) VIH 0.8VCC V VCC=6 to 15V Ignition OSC 400Hz Input voltage (Low level) VIL 0.2VCC V VCC=6 to 15V VCC t d (on) 2.0 µs VCC=10A, VIN=10V, IN1 Delay time * t d (off) 3.0 µs VM=85V, IO=0.41A IN2 Operating voltage VCC 6 15 V –40 to +125ºC HO1 * About delay time LO2 Signal input waveform vs output waveform HO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off LO1 VIN1 VIN1 10% 10% 10% 10% —HV 0V 0V 0V –100V 0V 0V 10% 10% OUT2-GND –400V 10% VOUT2 VOUT1 10% td (on) td (on) td (on) td (on) * ∆t: ∆t = td (on) – td (off) Measurement Circuit Conditions VCC=10V, VIN=10V (pulse) VIN1 RL VIN2 VM=85V IO=0.41A (RL=207Ω) VOUT1 VOUT2 VIN2 VIN1 * When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line VM RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. 68

High Voltage Full Bridge Drive ICs SLA2403M Electrical Characteristics ■ Quiescent circuit current ■ Quiescent circuit current supplied high voltage ■ Operating circuit current 3.0 3.0 4.0 VIN=0V VCC=VIN1(2)=10V VIN=0V 150ºC VCC=10V Operating circuit current ICC3 (mA) 3.5 Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC1 (mA) 2.5 125ºC 2.5 150ºC 150ºC 85ºC 3.0 125ºC 2.0 2.0 125ºC 25ºC 2.5 85ºC 85ºC 1.5 1.5 2.0 25ºC 25ºC –40ºC 1.5 1.0 1.0 –40ºC 1.0 –40ºC 0.5 0.5 0.5 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current supplied high voltage ■ Operating circuit current 5 3.5 4.0 150ºC Ta=25ºC VIN=0V Ta=25ºC VCC= VCC= Operating circuit current ICC3 (mA) VM=400V 3.5 Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC2 (mA) 125ºC 3.0 4 15V 15V 85ºC 3.0 2.5 3 2.5 25ºC 2.0 12V 12V 2.0 1.5 10V 2 10V 1.5 –40ºC 9V 9V 1.0 1.0 1 6V 6V 0.5 0.5 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Output on-state voltage ■ Input threshold voltage ■ Gate drive voltage 6 10 10 Ta=25ºC VOUT (ON) (V) VCC=VIN=10V VCC=15V 5 VCC=10V Input threshold voltage VIH (V) 8 8 VCC=10V Gate drive voltage VGL (V) 150ºC 4 125ºC 6 6 VCC= Output on-state voltage 6V 3 85ºC VCC=6V 4 4 2 25ºC –40ºC 2 2 1 0 0 0 0 1 2 3 4 –50 0 50 100 150 200 0 5 10 15 Output current I OUT (A) Ambient temperature (ºC) Input voltage VIN (V) ■ Output on-state voltage ■ Input threshold voltage ■ Gate drive voltage 4 7 10 VCC=VIN=10V Output on-state voltage VOUT (ON) (V) 6 Input threshold voltage VIL (V) 8 Gate drive voltage VGL (V) 3 VCC=10V 5 6 I O=2A 4 2 VCC=10V 3 4 VCC=6V 2 1 VCC=6V 2 I O=0.4A 1 0 0 0 –50 0 50 100 150 –50 0 50 100 150 –50 0 50 100 150 Ambient temperature (ºC) Ambient temperature (ºC) Ambient temperature (ºC) 69

High Voltage Full Bridge Drive ICs SLA2403M Electrical Characteristics ■ High side switch turn-on, off ■ High side switch turn-on, off ■ Low side switch turn-on, off 5.0 5.0 5.0 Ta=25ºC VM=85V, I O=0.41A Ta=25ºC VM=85V, I O=0.41A VCC=10V VM=85V, I O=0.41A 4.0 4.0 4.0 turn-off turn-on, off (µs) turn-on, off (µs) turn-on, off (µs) 3.0 turn-off 3.0 3.0 turn-off 2.0 2.0 2.0 turn-on turn-on turn-on 1.0 1.0 1.0 0 0 0 4 6 8 10 12 14 –50 0 50 100 150 4 6 8 10 12 14 Operation voltage VCC (V) Ambient temperature (ºC) Operation voltage VCC (V) ■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET) 5.0 100 100 VM=85V, I O=0.41A RDS (on) VCC=10V limited Transient thermal resistance (ºC/W) 10µs 4.0 10 100µs 10 Drain current (A) turn-on, off (µs) turn-off 3.0 1 1ms 1 2.0 0.1 10ms turn-on 0.1 1.0 0.01 Ta=25ºC Ta=25ºC Single pulse Single pulse 0 0.001 0.01 –50 0 50 100 150 0.001 0.01 0.1 1 10 100 10 100 1000 Ambient temperature (ºC) Power time (s) Drain to source voltage (V) ■ Power derating curve 50 Tc=25ºC 40 PD (W) 30 Power derating 20 10 without heatsink 0 –50 0 50 100 150 Ambient temperature (ºC) 70

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High Voltage Full Bridge Drive ICs SMA2409M Features External Dimensions (unit: mm) ● One Package Full Bridge Driver Consisted of High Voltage IC and Power 31.0 ±0.2 4.0±0.2 IGBT (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line b 10.2±0.2 2.7±0.2 a Absolute Maximum Ratings (Ta = 25°C) (10.4) Parameter Symbol Ratings Unit Conditions Power supply voltage VM 500 V Power GNG to HV Input voltage VIN 15 V +0.2 +0.2 Operation voltage Vcc 15 V 1.16 –0.1 0.65 –0.1 +0.2 14 • P2.03 ±0.1= (28.42) 0.55 –0.1 1.2 ±0.2 Output voltage Vo 500 V (root dimensions) (root dimensions) Output current (DC) Io(DC) 7 A Output current (pulses) Io(pulse) 15 A Single pulse (PW = 50µs max.) 31.3 ±0.2 4 a: Part No. Power dissipation PD W b: Lot No. 20 Tc = 25°C j-a 31.2 Thermal resistance °CW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 j-c 6.2 Tc = 25°C Operating temperature Topr –40 to +105 °C Storage temperature Tstg –40 to +150 °C Junction temperature Tj 150 °C IGBT single pulse EAS 5 mJ VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A Block Diagram avalanche resistance ESD protection ESD ±2 kV Human body model (C = 100pF, R = 1.5kΩ) 6 Electrical Characteristics (Ta = 25°C) IGBT Q2 4 IGBT Q1 VCC D2 D1 12 HO1 HO2 Ratings Parameter Symbol Unit Conditions OUT1 MIC OUT2 min typ max 2 IGBT Q'1 LO1 LO2 IGBT Q'2 GL2 14 GL1 VIN1 –HV VIN2 L GND IGBT output breakdown voltage BVOUT 570 V Io = 100µA, Tj = 25°C IGBT output leak current IOUT (off) 100 µA Vo = 500V 1.0 1.2 V Io = 0.4A, VIN (or VGL) = 10V IGBT output ON voltage VOUT (on) 3 5 7 9 8 10 11 13 1.3 1.8 V Io = 2.0A, VIN (or VGL) = 10V CPU Icc1 3.0 mA Vcc = 10V, VM = VIN = 0V Quiescent circuit current Icc2 4.0 mA Vcc = 10V, VM = 400V, VIN = 0V * Dotted Line: Outside Connection Operating circuit current Icc3 4.0 mA Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V VIH 0.8•Vcc V Input threshold voltage Vcc = 9 to 15V VIL 0.2•Vcc V Low-side IGBT gate drive voltage VGL 0.8•Vcc 16 V Vcc = 9 to 15V t d (on) 0.6 0.7 0.8 µs Timing Chart High side VM = 85V, Io = 0.41A t d (off) 1.8 2.2 2.6 µs Vcc = 10V A Drive Example Delay time* t d (on) 0.8 0.9 1.0 µs VIN = 10V (Out Stage = ON) Ignition OSC250Hz Low side VIN = 0V (Out Stage = OFF) VCC t d (off) 1.3 1.6 1.9 µs IN1 ∆t d = H/S t d (off) - L/S t d (on) ∆td 2.5 µs or L/S t d (off) - H/S t d (on) IN2 Operating voltage Vcc 9 15 V Ta = –40 to +105°C LO1 LO2 0V Recommended Operation Range –HV–GND –400V –85V Ratings OUT1–GND 0V Parameter Symbol Unit Conditions –85V min typ max –400V Dead time td 5.0 µs Ta = –40 to +105°C 0V OUT2–GND –85V –400V * About delay time Signal input waveform vs output waveform 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off VIN1 VIN1 0V 10% 10% 0V 10% 10% 0V 0V 10% 10% Vout2 10% 10% Vout1 td(on) td(off) Conditions Measurement Circuit VCC=10V, VIN=10V (pulse) VM=85V VIN1 RL VIN2 IO=0.41A (RL=206Ω) VOUT1 VOUT2 * When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line VIN2 VIN1 RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. 72

High Voltage Full Bridge Drive ICs SMA2409M Electrical Characteristics ■ Quiescent circuit current ■ Quiescent circuit current supplied high voltage ■ Operating circuit current 3.5 4.0 3.5 150ºC VIN=0V VCC=VIN1(2)=10V VIN=0V VCC=10V Operating circuit current ICC3 (mA) 3.5 Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC1 (mA) 3.0 105ºC 3.0 150ºC 3.0 150ºC 2.5 2.5 105ºC 25ºC 2.5 105ºC 2.0 2.0 2.0 25ºC 1.5 –40ºC 25ºC 1.5 1.5 1.0 –40ºC 1.0 –40ºC 1.0 0.5 0.5 0.5 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current supplied high voltage ■ Operating circuit current 5 3.5 3.5 150ºC VIN=0V Ta=25ºC VCC= Ta=25ºC Operating circuit current ICC3 (mA) VCC= Quiescent circuit current ICC2 (mA) VM=400V Quiescent circuit current ICC2 (mA) 125ºC 3.0 15V 3.0 4 15V 2.5 2.5 12V 3 25ºC 12V 2.0 2.0 10V 10V 1.5 9V 1.5 2 –40ºC 9V 1.0 1.0 6V 6V 1 0.5 4.5V 0.5 4.5V 0 0 0 0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500 Operation voltage VCC (V) High voltage VM (V) High voltage VM (V) ■ Output on-state voltage ■ Input threshold voltage ■ Gate drive voltage 2.0 10 14 150ºC Ta=25ºC VCC=15V VOUT (ON) (V) VCC=VIN=10V 105ºC VCC=15V 12 25ºC Input threshold voltage VIH (V) 8 Gate drive voltage VGL (V) –40ºC 10 1.5 6 Output on-state voltage 8 VCC=9V VCC=9V 6 4 1.0 4 2 2 0.5 0 0 0 1 2 3 4 –50 0 50 100 150 200 0 5 10 15 Output current I OUT (A) Ambient temperature (ºC) Input voltage VIN (V) ■ Output on-state voltage ■ Input threshold voltage ■ Gate drive voltage 2.0 8 14 Output on-state voltage VOUT (ON) (V) VCC=VIN=10V 1.8 7 12 VCC=15V Input threshold voltage VIL (V) Gate drive voltage VGL (V) 6 10 1.6 5 VCC=15V 1.4 8 I O=2A 4 VCC=9V 1.2 6 3 VCC=9V 1.0 4 2 I O=0.4A 0.8 2 1 0.6 0 0 –50 0 50 100 150 –50 0 50 100 150 200 –50 0 50 100 150 Ambient temperature (ºC) Ambient temperature (ºC) Ambient temperature (ºC) 73

High Voltage Full Bridge Drive ICs SMA2409M Electrical Characteristics ■ High side switch turn-on, off ■ High side switch turn-on, off ■ Low side switch turn-on, off 3.0 3.5 2.0 2.5 3.0 1.5 t d (off) 2.5 t d (off) turn-on, off (µs) turn-on, off (µs) turn-on, off (µs) 2.0 t d (off) 2.0 1.5 1.0 1.5 1.0 t d (on) 1.0 t d (on) 0.5 t d (on) 0.5 0.5 0 0 0 7 9 11 13 15 –50 0 50 100 150 7 9 11 13 15 Operation voltage VCC (V) Ambient temperature (ºC) Operation voltage VCC (V) ■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ IGBT ASO characteristics 2.5 100 100 Transient thermal resistance (ºC/W) 2.0 t d (off) 10 Collector current (A) turn-on, off (µs) 10 1.5 1 100µs 1.0 t d (on) 1 0.1 1ms 0.5 Ta = 25°C Single pulse 10ms 0 0.01 0.1 –50 0 50 100 150 0.001 0.01 0.1 1 10 100 10 100 1000 Ambient temperature (ºC) Power time (s) Collector-emitter voltage (V) ■ Power derating curve 5 without heatsink 4 PD (W) 3 Power derating 2 1 0 –50 0 50 100 150 Ambient temperature (ºC) 74

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Custom ICs ■ Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. ■ Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration. Features Examples of Sanken Automotive Hybrid ICs ● All semiconductor chips used are manufactured by Sanken. ● Main product lineup consists of Lead frame type power ICs produced out of many ● One-chip power IC multi-chip power IC years' experience of Sanken. ● Uses monolithic chips with flip-chip construction. ● Mainly available in miniature transfer-mold packages. Examples of Custom Hybrid IC Products ● Regulators for alternators Lead frame type ● High-output high-breakdown voltage IC ● Simplified integration of custom circuits ● Igniters power hybrid IC with ● Distribution of unit functions ● Power supply for microcomputer ceramic substrate (Actuators may be built in the device) system ● Power steering control IC ● Motor and actuator driver ● Others Surface-mount power IC 76

Custom ICs External Dimensions (unit: mm) MT-100 FM205 STA 8pin STA 10pin 15.6 5.0 10.0 4.2 20.2 4.0 25.25 4.0 9.0 9.0 19.9 16.9 SMA12pin SMA15pin SLA12pin SLA15pin 31.0 4.0 31.0 4.0 31.0 4.8 31.0 4.8 10.2 10.2 16.0 16 SLA18pin 3GR-F 3GR-M STR-S 15.6 5.5 19.8 5.5 24.2 5.5 31.0 4.8 16.0 23 23 23 SPM SMD16pin SPF16pin 12.05 4.8 16 15 14 13 12 11 10 9 35 16 9 9.8 6.8 10.5 7.5 16.1 Pin 1 20.0 8 1 2 3 4 5 6 7 8 4.0 2.5 SPF20pin SPF24pin 14.74±0.2 +0.1 13.04±0.2 1.0 – 0.05 17.28 20 11 Fin thickness 24 13 10.5±0.3 ±0.2 7.5 10.6 7.5 2±0.2 1 10 +0.15 1 12 1.27±0.25 0.4 – 0.05 2.5±0.2 +0.15 0.25 – 0.05 2.5 77

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2 Discretes 2-1. Transistors 2-2. MOS FETs ......................................... ......................................... 2-1-1. Transistors 80 2-2-1. MOS FETs 108 ...... ... 2SA1488/1488A (–60V/–4A, –80V/–4A) 80 2SK3710 (60V/70A/6mΩ, Surface-mount) 108 .................................... 2SA1567 (–50V/–12A) 81 2SK3711 (60V/70A/6mΩ) .............................. 109 ± 2SA1568 (–60V/ 12A) .................................... 82 2SK3724 (60V/80A/5mΩ, Surface-mount) ... 110 2SA1908 (–120V/–8A) ..................................... 83 2SK3800 (40V/70A/6mΩ, Surface-mount) .. 111 ................................... 2SB1622 (–200V/–15A) 84 2SK3801 (40V/70A/6mΩ) .............................. 112 2SC3852 (60V/3A) ........................................... 85 2SK3803 (40V/85A/3mΩ, Surface-mount) ... 113 ........................................ .......................... 2SC4024 (50V/10A) 86 2SK3851 (60V/85A/4.7mΩ) 114 ...................................... ... 2SC4065 (60V/±12A) 87 FKV460S (40V/60A/9mΩ, Surface-mount) 115 2SC4153 (120V/7A) ........................................ 88 FKV660S (60V/60A/14mΩ, Surface-mount) 116 .................................. ........................... 2SD2141 (380±50V/6A) 89 2-2-2. MOS FET Arrays 117 .................................... 2SD2382 (60±5V/±6A) 90 SDK06 (52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117 ........................................ 2SD2633 (150V/8A) 91 SDK08 (50V/4.5A/0.08Ω, Surface-mount 4-circuits) 118 ........................................... FP812 (–100V/–8A) 92 SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119 ................................. .......... MN611S (115±10V/±6A) 93 SLA5027 (60V/12A/0.08Ω, 4-circuits) 120 MN638S (380±50V/6A) ................................... 94 SLA5098 (40V/20A/0.017Ω, 6-circuits) ....... 121 ........... .......... SSD103 (65±5V/±6A, Surface-mount) 95 SMA5113 (450V/7A/1.1Ω, 4-circuits) 122 ............................ 2-1-2. Transistor Arrays 96 STA508A (120V/6A/0.2Ω, 4-circuits) ........... 123 ....... SDA03 (–60V/–6A, Surface-mount 4-circuits) 96 STA509A (52±5V/3A/0.25Ω, 4-circuits) 124 SDA04 (–60V/–6A, Surface-mount 2-circuits) 97 SDC09 (65±5V/6A, Surface-mount 2-circuits) 98 2-3 Thyristors ......... SLA8004 (60V/12A, –55V/–12A, H-bridge) 99 2-3-1. Reverse Conducting Thyristors .. 125 .............. SPF0001 (115±10V/±6A, Surface-mount 2-circuits) 100 TFC561D (600V, 430A, 1200A/µs) 125 .................. .............. STA315A (35±5V/2A, 3-circuits) 101 TFC562D (600V, 600A, 1600A/µs) 126 .................. STA335A (35±5V/3A, 2-circuits) 102 STA415A (35±5V/2A, 4-circuits) .................. 103 2-4. Diodes STA460C (60±10V/±6A, 2-circuits) .............. 104 2-4-1. Alternator Diodes .......................... 127 ................ .. STA461C (65±5V/±6A, 2-circuits) 105 2-4-2. High-voltage Diodes for Igniter 128 STA463C (115±10V/±6A, 2-circuits) ............ 106 2-4-3. Power Zener Diodes ................... 129 .................. .......... STA464C (65±5V/6A, 4-circuits) 107 2-4-4. General-purpose Diodes 130 79

Power Transistor 2SA1488/1488A Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta = 25ºC) External Dimensions TO220F (full-mold) Ratings Ratings Symbol Unit Symbol Test Conditions Unit 2SA1488 2SA1488A 2SA1488 2SA1488A 4.2 10.0 VCBO –60 –80 V –100max –100max µA 3.3 2.8 C0.5 ICBO VCEO –60 –80 V VCB = –60 –80 V µA 4 VEBO –6 V IEBO VEB = –6V –100max 8.4 IC –4 A V(BR) CEO IC = –25mA –60min –80min V 16.9 IB –1 A hFE VCE = –4V, IC = –1A 40min a 2.6 0.8 b PC 25 (Tc = 25ºC) W VCE (sat) IC = –2A, IB = –0.2A –0.5max V Tj 150 ºC fT VCE = –12V, IE = –0.2A 15typ MHz 3.9 Tstg –55 to +150 ºC COB VCB = –10V, f = 1MHz 90typ pF 1.35 (13.5) 1.35 0.85 Typical Switching Characteristics (common emitter) 2.54 2.54 0.45 VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 2.2 (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a) Part No. –12 6 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ b) Lot No. B C E (Unit: mm) ■ IC —VCE Characteristics (typ.) ■ VCE (sat)—IB Characteristics (typ.) ■ IC —VBE Temperature Characteristics (typ.) ( VC E = –4 V) –4 –1.5 –4 A 0m –60mA –50mA –8 –40mA –3 –3 –30mA –1.0 VCE (sat) (V) IC (A) re) IC (A) ) ) atu tu re –2 –20mA tu re –2 per p e ra p e ra tem m m –0.5 e te se –10mA e te (Ca –1 IC = –3A –1 (C a s (C a s ºC IB = –5mA –2A 125 – 3 0 ºC 2 5 ºC –1A 0 0 0 0 –1 –2 –3 –4 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5 VCE (V) IB (A) VBE (V) ■ hFE —IC Characteristics (typ.) ■ hFE —IC Temperature Characteristics (typ.) ■ j-a —t Characteristics (VC E = –4V) (VC E = –4 V ) 500 200 5 125ºC 100 25ºC (ºC/W) Typ –30ºC hFE hFE 100 50 j-a 50 1 20 20 0.7 –0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000 IC (A) IC (A) t (ms) ■ f T —IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC —Ta Derating (VCE = –12V) 60 –10 30 natural air cooling 1m Silicone grease –5 100ms 10 s Aluminum heatsink 50 m Unit: mm s 40 Typ DC 20 fT (MHz) PC (W) W –1 IC (A) ith in 30 fin 15 ite –0.5 0• he 15 at si Without heatsink 0• nk 20 natural air cooling 10 100 2 • 10 0 50 • • 2 10 50 • 2 –0.1 Without heatsink 2 0 –0.05 0 0.005 0.01 0.05 0.1 0.5 1 3 3 5 10 50 100 0 25 50 75 100 125 150 IE (A) VCE (V) Ta (ºC) 80

Power Transistor 2SA1567 Absolute Maximum Ratings (Ta = 25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220F (full-mold) Symbol Ratings Unit Symbol Test Conditions Ratings Unit VCBO –50 V ICBO VCB = –50V –100max µA 10.0 4.2 VCEO –50 V IEBO VEB = –6V –100max µA 3.3 2.8 C0.5 VEBO –6 V V(BR) CEO IC = –25mA –50min V IC 4 –12 A hFE VCE = –1V, IC = –6A 50min 8.4 IB –3 A VCE (sat) IC = –6A, IB = –0.3A –0.35max V 16.9 PC 35 (Tc = 25ºC) W fT VCE = –12V, IE = –0.5A 40typ MHz a 2.6 0.8 b Tj 150 ºC COB VCB = –10V, f = 1MHz 330typ pF Tstg –55 to +150 ºC 3.9 Typical Switching Characteristics (common emitter) 1.35 (13.5) 1.35 0.85 VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 2.54 2.54 0.45 –24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ 2.2 a) Part No. b) Lot No. B C E (Unit: mm) ■ IC —VCE Characteristics (typ.) ■ VCE (sat)—IB Characteristics (typ.) ■ IC —VBE Temperature Characteristics (typ.) ( VC E = –4 V) –12 –1.5 –12 A 0m –20B = 0mA –15 –100mA I –10 –10 –8 –60mA –1.0 –8 VCE (sat) (V) IC (A) IC (A) ) ) tu re ) –40mA ure –6 –6 ture rat p e ra era pe IC = –12A emp te m tem –4 –20mA –0.5 –9A –4 se t –6A se ase (Ca –3A a –10mA º C (C C (C –2 –2 5ºC –1A –5mA –30 25º 12 0 0 0 0 –1 –2 –3 –4 –5 –6 –2 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 VCE (V) IB (mA) VBE (V) ■ hFE —IC Characteristics (typ.) ■ hFE —IC Temperature Characteristics (typ.) ■ j-a —t Characteristics (VC E = –1V) (VC E = –1V ) 500 500 4 125ºC Typ 25ºC – 30ºC (ºC/W) hFE hFE 100 1 100 j-a 50 50 0.5 30 30 0.3 –0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000 IC (A) IC (A) t (ms) ■ f T —IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC —Ta Derating (VCE = –12V) 50 –30 35 1m natural air cooling s Silicone grease 30 –10 10 10 Aluminum heatsink Typ m 0m Unit: mm 40 s –5 DC s W fT (MHz) ith 20 PC (W) IC (A) in fin 30 –1 ite he 150 at –0.5 •1 si 100 50 nk • 10 0 • •2 Without heatsink natural air cooling 10 20 2 50 • 50 • 2 –0.1 Without heatsink –0.05 2 0 0 0.05 0.1 1 12 –3 –5 –10 –50 –100 0 25 50 75 100 125 150 IE (A) VCE (V) Ta (ºC) 81

Power Transistor 2SA1568 Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220F (full-mold) Symbol Ratings Unit Symbol Test Conditions Ratings Unit VCBO –60 V ICBO VCB = –60V –100max µA 4.2 10.0 VCEO –60 V IEBO VEB = –6V –60max mA 3.3 2.8 C0.5 VEBO –6 V V(BR) CEO IC = –25mA –60min V 4 ± IC 12 A hFE VCE = –1V, IC = –6A 50min 8.4 IB –3 A VCE (sat) IC = –6A, IB = –0.3A –0.35max V 16.9 PC 35 (Tc=25ºC) W VFEC IECO = –10A –2.5max V a 2.6 0.8 b Tj 150 ºC fT VCE = –12V, IE = 0.5A 40typ MHz Tstg –55 to +150 ºC COB VCB = –10V, f = 1MHz 330typ pF 3.9 1.35 (13.5) 1.35 Typical Switching Characteristics (common emitter) 0.85 VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 2.54 2.54 0.45 (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 2.2 –24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ a) Part No. b) Lot No. B C E (Unit : mm) ■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) ( VC E = –1 V) –12 –1.4 –12 mA –150 A –20 B = 0m –100mA I –10 –10 –1.0 –8 –8 VCE (sat) (V) IC (A) –60mA IC = –12A IC (A) ) –9A ure re) –6 –6 ) tu re –40mA rat atu –6A pe p e ra per –3A tem –0.5 tem –4 –4 m –20mA –1A se s e te ase (Ca a C (C 5ºC –10mA º C (C –2 –2 12 25º –30 0 0 0 0 –1 –2 –3 –4 –5 –6 –7 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 VCE (V) IB (mA) VBE (V) ■ hFE — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) ■ j-a — t Characteristics (VC E = –1V) (VC E = –1V ) 300 300 4 Typ 125ºC 25ºC 100 100 –30ºC (ºC/W) hFE hFE 1 j-a 10 10 0.5 2 2 0.3 –0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000 –12 –12 IC (A) IC (A) t (ms) ■ f T — IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC — Ta Derating (VCE = –12V) 50 –30