Thyristor with built-in reverse diode for HID lamp ignition TFC562D
Features
Repetitive peak off-state voltage: V
DRM
=600V
Repetitive peak surge on-state current: I
TRM
=600A
Critical rate-of-rise of on-state current: di/dt=1600A/µs
Gate trigger current: I
GT
=20mA max
With built-in reverse diode
External Dimensions
(unit: mm)
4.44
±0.2
(1.4)
(5)
1.3
±0.2
(0.45)
b
9.1
±0.3
10.5
–0.5
+0.3
a
2.6
±0.2
(Root dimension)
Absolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive surge peak
on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge
forward current
Junction temperature
Storage temperature
Symbol
V
DRM
Ratings
600
600
1600
2
5
0.5
5
460
–40 to +125
–40 to +125
1.34
–0.1
0.86
–0.1
+0.2
+0.2
V
A
A/µs
A
W
W
V
A
Tj = –40 to +125°C,
R
GK
= 1kΩ
Ta = 100°C, V
D
430V,
W
P
= 1.05µs, I
G
= 70mA,
dig/dt = 0.5A/µs,
100kcycle
*
,
See the examples of current waveforms
f
f
50Hz, duty 10%
50Hz, duty 10%
0.76
±0.1
I
TRM
di/dt
I
FGM
P
GM
P
G (AV)
V
RGM
I
FRM
Tj
Tstg
2.54
±0.1
(Root dimension)
10.2
±0.3
0.4
±0.1
2.54
±0.1
(Root dimension)
1
2
3
f
50Hz
Ta = 100°C, V
D
430V,
W
P
= 1.05µs,
100kcycle
*
,
See the examples of current waveforms
ºC
ºC
Current waveform (1cycle)
(Ta=100ºC)
*
The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
Electrical Characteristics
Parameter
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
Symbol
V
TM
V
GT
I
GT
(1)
V
GD
I
H
I
DRM
(1)
I
DRM
(2)
Rth
V
F
0.1
2
5
10
1
4.0
1.4
(Tj=25ºC)
Ratings
min
typ
max
1.4
1.5
20
Unit
V
V
mA
V
mA
µA
mA
°C/W
V
I
T
= 10A
Conditions
V
D
= 6V, R
L
= 10Ω
V
D
= 6V, R
L
= 10Ω
V
D
= 480V, Tj = 125°C
R
G–K
= 1kΩ, Tj = 25°C
V
D
= V
DRM
, R
G–K
= 1kΩ, Tj = 25°C
V
D
= V
DRM
, R
G–K
= 1kΩ, Tj = 125°C
V: 200A/div
H: 2µs/div
* A single cycle operation consists of a continuous impression of 50
rounds with period T = 10ms followed by a rest time for the junction
temperature of the element to cool down to 100°C (= Ta). Repeat
this cycle operation.
Junction to case, With infinite heatsink
I
F
= 10A
126
11.0
±0.5
Unit
Conditions
(2.69) (1.8)
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