Thyristor with built-in reverse diode for HID lamp ignition TFC561D
Features
●
Repetitive peak off-state voltage: V
DRM
=600V
●
Repetitive peak surge on-state current: I
TRM
=430A
●
Critical rate-of-rise of on-state current: di/dt=1200A/µs
●
Gate trigger current: I
GT
=20mA max
●
With built-in reverse diode
External Dimensions
(unit: mm)
10.2
±0.3
(1.4)
4.44
±0.2
1.3
±0.2
+0.3
10.0
–0.5
1.2
±0.2
0.86
–0.1
0.76
±0.1
+0.2
11.3
±0.5
8.6
±0.3
Absolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive surge peak
on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge
forward current
Junction temperature
Storage temperature
Symbol
V
DRM
Ratings
600
Unit
V
Conditions
Tj=–40 to +125°C,
R
GK
=1kΩ
V
D
430V, 100kcycle,
2.54
±0.5
2.54
±0.5
11.0
±0.5
1.27
±0.2
2.59
±0.2
0.4
±0.1
I
TRM
di/dt
I
FGM
P
GM
P
G (AV)
V
RGM
I
FRM
Tj
Tstg
430
1200
2.0
5.0
0.5
5
240
–40 to +125
–40 to +125
A
A/µs
A
W
W
V
A
ºC
ºC
*
(1) (2) (3)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
Wp=1.3µs, Ta=125°C
*
f
f
50Hz, duty
50Hz, duty
10%
10%
Weight: Approx. 1.5g
f
V
D
50Hz
430V, 100kcycle,
Measurement circuit
*
L
Wp=1.3µs, Ta=125°C
*
The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
V
D
Sample
G
1
C
G
2
Electrical Characteristics
Parameter
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
Symbol
min
V
TM
V
GT
I
GT
V
GD
I
H
I
DRM
(1)
I
DRM
(2)
Rth
V
F
0.1
2
10.0
100
1
4.0
1.4
Ratings
typ
max
1.4
1.5
20
V
V
mA
V
mA
µA
mA
ºC/W
V
I
T
=10A
V
D
=6V, R
L
=10Ω
V
D
=6V, R
L
=10Ω
V
D
=480V, Tj=125ºC
R
G–K
=1kΩ, Tj=25ºC
Unit
Conditions
(Tj=25ºC)
Current waveform (1cycle)
(Ta=25ºC)
V
D
=V
DRM
, R
G–K
=1kΩ, Tj=25ºC
V
D
=V
DRM
, R
G–K
=1kΩ, Tj=125ºC
Junction to case
I
F
=10A
100A/div
2µs/div
125