MOS FET Array STA509A
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
1
P
T
Ratings
52±5
±20
±3
±6
Unit
V
V
A
A
W
W
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±20V
V
DS
= 40V, V
GS
= 0V
V
DS
= 10V, I
D
= 250µA
V
DS
= 10V, I
D
= 1.0A
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4V, I
D
= 1.0A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 1A
V
DD
12V
R
L
= 12Ω
V
GS
= 5V
R
G1
= 50Ω, R
G2
= 10Ω
I
SD
= 6A, V
GS
= 0V
min
47
Ratings
typ
52
max
57
±1.0
100
2.5
0.25
0.3
(Ta=25ºC)
Unit
V
µA
µA
V
S
Ω
Ω
pF
pF
pF
µs
µs
µs
µs
V
External Dimensions
STA
25.25
±0.2
±0.2
±0.2
9.0
±0.2
b
a
11.3
4 (Ta = 25ºC)
20 (Tc = 25ºC)
E
AS
*
2
40
mJ
Tch
ºC
150
Tstg
ºC
–55 to +150
*1 P
W
100µs, duty 1%
*2 V
DD
= 12V, L = 10mH, unclamped, R
G
= 10Ω
1.0
1.0
0.2
0.25
200
120
20
2.0
7.4
3.3
4.2
1.0
3.5
±0.5
2.3
1.0
±0.25
0.5
±0.15
(2.54)
0
±0.3
0
±0.3
9 •2.54=22.86
±0.05
±0.15
1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S
a) Part No.
b) Lot No.
(Unit: mm)
1.5
■
I
D
—
V
DS
Characteristics
6
5
V
GS
=
5V
V
GS
=
10V
V
GS
=
4V
■
I
D
—
V
GS
Characteristics
20
10
V
DS
=
10V
■
R
DS (ON)
—
I
D
Characteristics
0.8
V
GS
=
4V
Ta
=
150ºC
0.6
R
DS (ON)
(Ω)
4
1
0.5
75ºC
I
D
(A)
I
D
(A)
1.2
3
2
V
GS
=
3V
0.4
25ºC
0.1
1
0
0.01
Ta
= –55ºC
25ºC
75ºC
150ºC
–55ºC
0.2
0
2
4
6
8
10
12
14
0
0
1
2
3
4
5
6
0
1
2
3
4
5
4.0
C1.5
±0.5
±0.2
±0.2
6
V
DS
(V)
V
GS
(V)
I
D
(A)
■
R
DS (ON)
—
T
C
Characteristics
0.5
I
D
=
1A
■
R
e (yfs) —
I
D
Characteristics
10
V
DS
=
10V
■
I
DR
—
V
SD
Characteristics
10
0.4
V
GS
=
4V
typ.
5
8
R
DS (ON)
(Ω)
Re
(yfs)
(S)
0.2
V
GS
=
10V
typ.
1
I
DR
(A)
0.3
6
0.1
0.5
Ta
= –55ºC
25ºC
150ºC
4
Ta
=
150ºC
75ºC
25ºC
–55ºC
2
0
–50
0
50
100
150
0.2
0.05 0.1
0.5
1
6
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tc (ºC)
I
D
(A)
V
SD
(V)
■
Safe Operating Area (single pulse)
10
I
D
(pulse)
max
(Tc
=
25ºC)
10
0
µ
s
Equivalent Circuit Diagram
5
n
(o
)
L
IM
IT
ED
1m
m
10
s
R
D
S
I
D
(A)
3
5
7
9
s
1
2
4
6
8
0.5
1
10
0.1
0.5
1
5
10
50
V
DS
(V)
124