MOS FET Array SMA5113
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
1
P
T
E
AS
*
2
I
AS
j-a
j-c
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100µA, V
GS
= 0V
V
GS
=
±30V
V
DS
= 450V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 20V, I
D
= 3.5A
V
GS
= 10V, I
D
= 3.5A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 3.5A
V
DD
200V
R
L
= 57Ω
V
GS
= 10V
R
G
= 50Ω
I
SD
= 7A, V
GS
= 0V
min
450
±100
100
4.0
5.0
0.84
720
150
65
25
40
70
50
1.0
1.1
Ratings
typ
max
(Ta=25ºC)
Unit
V
nA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
SMA (LF1000)
10.2
±0.2
Ratings
450
±30
±7
±28
4 (Ta=25ºC, All circuits operate, No Fin)
35 (Tc=25ºC, All circuits operate,
Fin)
Unit
V
V
A
A
W
W
mJ
A
ºC/W
ºC/W
4.0
±0.2
31.0
±0.2
2.5
±0.2
b
2.4
a
30º
2.0
3.5
130
7
31.2
3.57
Junction - Ambientare,
Ta=25º
C
, All circuits operate
Junction - Case,
Ta=25º
C
, All circuits operate
(10.4)
1.21
±0.15
1.46
±0.15
0.85
–0.1
11• P2.54
±0.1
=27.94
+0.2
+0.2
0.55
–0.1
1.2
±0.1
31.5 max
(Including both-side resin burr)
ºC
150
ºC
–55 to +150
*1 P
W
100µs, duty 1%
*2 V
DD
= 30V, L = 5mH, I
L
= 7A, unclamped,
R
G
= 50Ω
Tch
Tstg
1 2 3 4 5 6 7 8 9 10 11 12
1.5
a) Part No.
b) Lot No.
(Unit: mm)
I
D
V
DS
Characteristics
7
10V
5.5V
I
D
V
GS
Characteristics
7
6
5
V
DS
=
20V
R
DS (ON)
I
D
Characteristics
1.5
V
GS
=
10V
6
5
I
D
(A)
5V
I
D
(A)
4
3
2
1
0
V
GS
=
4.5V
4
3
2
1
0
Ta
= –55ºC
25ºC
150ºC
R
DS (ON)
(Ω)
0
2
4
6
8
10
1.0
0.5
0
5
10
15
20
0
0
1
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
I
D
(A)
R
DS (ON)
T
C
Characteristics
2.5
V
GS
=
10V
I
D
=
3.5A
R
e (yfs) —
I
D
Characteristics
100
V
DS
=
20V
I
DR
V
SD
Characteristics
7
V
GS
=
0V
2.0
50
6
5
R
D
S (ON)
(Ω)
1.0
10
Ta
= –55ºC
25ºC
150ºC
I
DR
(A)
7
1.5
Re
(yfs)
(S)
4
3
2
1
0.5
5
0
–50
0
50
100
150
2
0.05 0.1
0.5
1
0
0
0.2
0.4
0.6
0.8
1.0
Tc (ºC)
I
D
(A)
V
SD
(V)
Capacitance — V
DS
Characteristics
1000
Ciss
Safe Operating Area (single pulse)
50
I
D
(pulse)
max
(Ta
=
25ºC)
Equivalent Circuit Diagram
500
10
V
GS
=
0V
f
=
1MHz
Capacitance (pF)
10
I
D (DC)
max
5
R
D
S
n
(o
ED
IT
M
LI
)
1m
10
0
µ
s
3
6
7
10
s
I
D
(A)
10
1
0.5
m
s
1
4
8
11
100
50
0m
s
Coss
2
5
9
12
Crss
0.1
20
0
10
20
30
40
50
0.05
3
5
10
50
100
500
V
DS
(V)
V
DS
(V)
122
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