MOS FET Array SLA5098
(under development)
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
E
AS
I
AS
Ratings
40
±
20
20
40
Unit
V
V
A
A
Electrical Characteristics
Symbol
Test Conditions
(Ta=25ºC)
External Dimensions
STA4 (LF412)
min
40
Ratings
typ
max
±10
100
Unit
13.0
±0.2
9.9
±0.2
8.5max
To be defined
To be defined
Without heatsink,
5
(
All circuits operateTa=25°C,
)
Tc=25°C,
90
(
All circuits operate
)
mJ
A
W
W
ºC
ºC
Tch
Tstg
150
–55 to +150
V
DS
=
10V
f
=
1.0MHz
V
GS
=
0V
I
D
=
10A
V
DD
=
14V
R
L
=
1.4Ω
V
GS
=
10V
R
G
=
50Ω
I
SD
=
10A, V
GS
=
0V
I
SD
=
10A, V
GS
=
0V
di/dt
=
100A/µs
2.7
P
T
* P
W
100µs, duty 1%
V
(BR)
DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
t
rr
1450
420
260
40
40
200
100
0.85
45
9.5min (10.4)
I
D
=
100µA, V
GS
=
0V
V
GS
=
±15V
V
DS
=
40V, V
GS
=
0V
V
DS
=
10V, I
D
=
250µA
V
DS
=
10V, I
D
=
10A
V
GS
=
10V, I
D
=
10A
1.5
10
16.0
±0.2
2.5
17
1.2
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
31.0
±0.2
3.2
±0.1
24.4
±0.2
16.4
±0.2
Ellipse 3.2
±0.1
• 3.8
4.8
±0.2
1.7
±0.1
Lead plate thickness
resins 0.8 max
15
+0.2
+0.2
a
b
Pin 1
1.2
±0.15
0.65
–0.1
1.15
–0.1
14•P2.03
±0.4
= 28.42
±0.8
31.5 max
0.55
–0.1
+0.2
2.2
±0.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
a) Part No.
b) Lot No.
(Unit: mm)
Equivalent Circuit Diagram
4
9
14
5
3
10
8
15
13
2
7
12
1
6
11
121
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