MOS FET Array SLA5027
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
1
P
T
E
AS
*
j-c
2
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100µA, V
GS
= 0V
V
GS
=
±20V
V
DS
= 60V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, I
D
= 8A
V
GS
= 4V, I
D
= 8A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 8A
V
DD
30V
R
L
= 3.75Ω
V
GS
= 5V
R
G
= 50Ω
I
SD
= 10A, V
GS
= 0V
min
60
±100
100
2.0
0.08
Ratings
typ
max
(Ta=25ºC)
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
SLA 12pin (LF800)
16.0
±0.2
13.0
±0.2
5 (Ta=25ºC, 4 circuits operate)
60 (Tc=25ºC,4 circuits operate)
8.5max
9.9
±0.2
1.0
6.0
9.5min (10.4)
2.7
250
2.08
(Fin to lead terminal) AC1000
150
–55 to +150
*1 P
W
250µs, duty 1%
*2 V
DD
= 30V, L = 10mH, unclamped, R
G
= 50Ω
V
ISO
Tch
Tstg
mJ
ºC/W
Vrms
ºC
ºC
1.5
12.0
0.07
1100
500
170
50
250
250
180
1.0
a
b
Pin 1
1.2
±0.15
0.85
+0.2
–0.1
12
1.45
±0.15
11•P2.54
±0.7
=27.94
±1.0
31.5 max
0.55
+0.2
–0.1
Lead plate thickness
resins 0.8 max
Ratings
60
±20
±12
±48
Unit
V
V
A
A
W
W
31.0
±0.2
3.2
±0.15
24.4
±0.2
16.4
±0.2
Ellipse 3.2
±0.15
• 3.8
4.8
±0.2
1.7
±0.1
2.2
±0.7
1 2 3 4 5 6 7 8 9 10 11 12
1.5
a) Part No.
b) Lot No.
(Unit: mm)
I
D
V
DS
Characteristics
10
I
D
V
GS
Characteristics
12
10
V
DS
=
10V
R
DS (ON)
I
D
Characteristics
0.1
8
6
R
DS (on)
(Ω)
4V
5V
10V
V
GS
=
4V
8
I
D
(A)
I
D
(A)
V
GS
=
3V
6
4
4
Ta
=
150ºC
75ºC
25ºC
–55ºC
0.05
V
GS
=
10V
2
2
0
0
0.1
0
0
1
2
3
4
5
6
0
1
2
3
4
1
10
20
V
DS
(V)
V
GS
(V)
I
D
(A)
R
DS (ON)
T
C
Characteristics
0.12
V
GS
=
4V
R
e (yfs) —
I
D
Characteristics
30
V
DS
=
10V
I
DR
V
SD
Characteristics
20
10
5
V
GS
=
0V
0.10
R
DS (ON)
(Ω)
Re
(yfs)
(S)
V
GS
=
10V
I
DR
(A)
1
5
10
20
10
0.06
1
0.5
5
0.02
–50
0
50
100
150
2
0.4
0.1
0
0.4
0.8
1.2
Tc (ºC)
I
D
(A)
V
SD
(V)
Capacitance —
V
DS
Characteristics
2000
V
GS
=
0V
f
=
1MHz
Safe Operating Area (single pulse)
50
I
D
(pulse)
max
=4
Vl
ine
(Ta
=
25ºC)
Equivalent Circuit Diagram
ED
0.
(o
n)
LI
um
M
ed
IT
V
5m
1000
Ciss
R
GS
s
1m
Capacitance (pF)
DS
10
As
s
s
m
500
10
I
D (DC)
max
s
10
0m
3
6
7
10
I
D
(A)
Coss
s
5
1
4
8
11
100
Crss
2
5
9
12
1
0.5
0.5
50
1
5
10
50
1
5
10
50 100
V
DS
(V)
V
DS
(V)
120
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