Surface-mount MOS FET Array SDK08
(Ta=25ºC)
Symbol
Ratings
Unit
V
DSS
50
V
V
GSS
±20
V
±4.5
I
D
A
±9
I
D (pulse)
*
1
A
P
T
W
4 (Tc=25ºC, 4 circuits operate)
E
AS
*
2
80
mJ
Tch
ºC
150
Tstg
ºC
–55 to +150
*1 P
W
100µs, duty 1%
*2 V
DD
= 12V, L = 10mH, unclamped, R
G
= 50Ω
Absolute Maximum Ratings
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100µA, V
GS
= 0V
V
GS
=
±20V
V
DS
= 50V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, I
D
= 4.0A
V
GS
= 10V, I
D
= 4.0A
V
GS
= 4V, I
D
= 4.0A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 4A
V
DD
12V
R
L
= 3Ω
V
GS
= 5V
R
G
= 50Ω
I
SD
= 6A, V
GS
= 0V
min
50
±100
100
2.3
13.0
0.08
0.1
Ratings
typ
max
(Ta=25ºC)
Unit
V
nA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
SMD-16A
1.0
±0.3
0.25
0.89
±0.15
0.75
+0.15
–0.05
2.54
±0.25
16
9.8
±0.3
6.8max
3.0
±0.2
6.3
±0.2
8.0
±0.5
9
0 to 0.15
1.3
5.0
4.0max
50
80
60
40
1.0
1.4
±0.2
3.6
±0.2
1.8
9.0
0.07
0.09
700
300
90
a
b
Pin 1
20.0max
19.56
±0.2
8
0.3
–0.05
+0.15
a) Part No.
b) Lot No.
(Unit: mm)
1.5
I
D
V
DS
Characteristics (typ.)
18
16
14
12
I
D
V
GS
Characteristics
20
10
V
DS
V
GS
Characteristics (typ.)
(V
DS
= 10V)
1.4
1.2
Ta = 150°C
75°C
25°C
0°C
–55°C
R
e (yfs) —
I
D
Characteristics
100
Ta = 150°C
25°C
–55°C
(Ta = 25ºC)
V
GS
= 4V
(I
D
= 4A)
(V
DS
= 10V)
V
DS
(V)
I
D
(A)
10
8
6
4
2
0
0
3
6
9
12
15
V
GS
= 3V
I
D
(A)
V
GS
= 10V
0.8
0.6
0.4
0.2
0.1
0.01
Ta = 150°C
75°C
25°C
0°C
–55°C
0
1
2
3
4
5
Re
(yfs)
(S)
1
1.0
10
1
0.001
0
0
2
4
6
8
10
0.1
0.05 0.1
1
10
V
DS
(V)
V
GS
(V)
V
GS
(V)
I
D
(A)
R
DS (ON)
I
D
Characteristics
0.20
Ta = 150°C
75°C
25°C
0°C
–55°C
R
DS (ON)
I
D
Characteristics
0.20
R
DS (ON)
T
C
Characteristics (typ.)
S/W Time
W
I
D
Characteristics
0.20
(V
GS
= 10V)
(V
GS
= 4V)
(I
D
= 4A)
500
(single pulse)
(Ta = 25ºC)
V
DD
= 12V constant
R
GS
= 50Ω
V
GS
= 5V
R
D
S (ON)
(Ω)
R
D
S (ON)
(Ω)
R
D
S (ON)
(Ω)
0.15
0.15
0.15
V
GS
= 4V
S/W Time (ns)
Ta = 150°C
100
t
d (off)
t
d (on)
t
r
75°C
0.10
25°C
0°C
0.05
–55°C
0.10
0.10
t
f
0.05
0.05
V
GS
= 10V
10
0
0
0
–60 –50
5
0.1
0.5
1
5
10
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0
50
100
150
I
D
(A)
I
D
(A)
Tc (ºC)
I
D
(A)
Equivalent Circuit Diagram
Capacitance — V
DS
Characteristics
I
SD
V
SD
Characteristics (typ.)
5000
P
T
Ta
Characteristics
4
4 circuits operate
3 circuits operate
2 circuits operate
1 circuits operate
1
(Ta = 25ºC)
V
GS
= 0V
f = 1MHz
8
7
6
Capacitance (pF)
1000
3
15
16
13
14
11
12
9
10
4
3
2
1
0
100
Coss
Ta = 150°C
75°C
25°C
0°C
–55°C
P
T
(W)
I
SD
(A)
Ciss
5
2
3
5
7
Crss
10
5
0.1
1
10
100
1
2
4
6
8
0
0
0.3
0.6
0.9
1.2
1.5
0
50
100
150
V
DS
(V)
V
SD
(V)
Ta (ºC)
118
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