MOS FET FKV460S
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
P
D
Tch
Tstg
* P
W
Ratings
40
+20, –10
±60
±180
Unit
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100µA, V
GS
= 0V
V
GS
= +20V
V
GS
= –10V
V
DS
= 40V, V
GS
= 0V
V
DS
= 10V, I
D
= 250µA
V
DS
= 10V, I
D
= 25A
V
GS
= 10V, I
D
= 25A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 25A
V
DD
= 12V
R
L
= 0.48Ω
V
GS
= 10V
I
SD
= 50A, V
GS
= 0V
min
40
+10
–5
100
2.3
7
2800
1400
600
20
600
250
100
1.0
9
Ratings
typ
max
(Ta=25ºC)
Unit
V
External Dimensions
TO220S
10.2
±0.3
(1.4)
4.44
±0.2
1.3
±0.2
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
10.0
–0.5
+0.3
60 (Tc=25ºC)
150
–55 to +150
100µs, duty 1%
a
8.6
±0.3
(1.5)
1.3
20.0
1.6
+0.2
b
0.1
–0.1
+0.3
3.0
–0.5
1.27
±0.2
0.86
–0.1
1.2
2.54
±0.5
±0.2
+0.2
0.4
±0.1
2.54
±0.5
a) Part No.
b) Lot No.
(Unit : mm)
1.5
I
D
V
DS
Characteristics (typ.)
60
50
40
10V
5.0V
4.0V
(Ta = 25ºC)
3.5V
I
D
V
GS
Characteristics (typ.)
70
60
(
V
DS
=
10V
)
V
DS
V
GS
Characteristics (typ.)
1.0
0.8
(Ta = 25ºC)
R
e (yfs) —
I
D
Characteristics
500
(V
DS
= 10V)
50
I
D
(A)
I
D
(A)
40
30
20
10
Ta = 150ºC
25ºC
–55ºC
V
DS
(V)
0.6
0.4
0.2
I
D
= 60A
Re
(yfs)
(S)
100
50
–55ºC
25ºC
150ºC
30
V
GS
= 3.0V
20
10
0
0
1
2
3
4
5
25A
10A
10
20
5
1
5
10
60
0
0
1
2
3
4
0
0
5
10
15
V
DS
(V)
V
GS
(V)
V
GS
(V)
I
D
(A)
R
DS (ON)
I
D
Characteristics
14
12
Ta = 25ºC
V
GS
= 10V
R
DS (ON)
T
C
Characteristics
14
12
V
GS
= 10V
I
D
= 25A
(ºC/W)
j-c
j-a
— t
Characteristics
(Single pulse)
j-a
FR4 (70 • 100 • 1.6mm)
50
10
R
D
S (ON)
(mΩ)
10
8.0
6.0
4.0
2.0
0
0
10
20
30
40
50
60
R
D
S (ON)
(mΩ)
10
8.0
6.0
4.0
2.0
0
–60 –50
0
50
100
150
Use substrate
1
0.1
j-c
j-c •
j-a
0.01
0.0001
0.001
0.01
0.1
1
10
I
D
(A)
Tc (ºC)
t (s)
Capacitance — V
DS
Characteristics
I
DR
V
SD
Characteristics
10000
(Ta = 25ºC)
V
GS
= 0V
f = 1MHz
Ciss
60
10V
50
5V
40
(Ta = 25ºC)
Safe Operating Area (single pulse)
P
D
T
C
Characteristics
200
I
D
(pulse) max
100
)
ON
S(
(Ta = 25ºC)
ED
P
T
70
60
50
P
T
=1
0m
Capacitance (pF)
M
LI
IT
=1
m
s
P
D
(W)
I
DR
(A)
1000
Coss
Crss
30
V
GS
= 10V
20
10
I
C
(A)
10
R
D
s
40
30
20
10
1
100
0
10
20
30 35
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.1
0
1
10
50
0
25
50
75
100 125 150
V
DS
(V)
V
SD
(V)
V
DS
(V)
Tc (ºC)
115
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