MOS FET 2SK3851
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
1
P
D
EAS*
2
Tch
Tstg
Ratings
60
±
20
±
85
±
280
Unit
V
V
A
A
W
mJ
ºC
ºC
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
t
rr
Test Conditions
(Ta=25ºC)
External Dimensions
TO-3P
1.8
5.0
±0.2
15.6
±0.4
13.6
9.6
4.8
±0.2
2.0
±0.1
min
60
Ratings
typ
max
±
10
100
3.0
Unit
150
280
150
–55
to +150
I
D
= 100µA, V
GS
= 0V
V
GS
=
±
20V
V
DS
= 60V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, I
D
= 42A
V
GS
= 10V, I
D
= 42A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 42A
V
DD
16V
R
G
= 22
V
GS
= 10V
I
SD
= 50A, V
GS
= 0V
I
SD
= 50A, di/dt = 100A/µS
2.0
30
2.5
4.0
11500
1500
1100
60
25
370
65
0.87
70
4.7
*
1:
P
W
100µs, duty cycle 1%
*
2:
V
DD
= 20V, L = 1mH, I
L
= 20A, unclamped
1.5
V
µA
µA
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
19.9
±0.3
4.0
2.0
a
b
3.2
±0.1
20.0 min
4.0 max
2
3
1.05
–0.1
+0.2
+0.2
0.65
–0.1
5.45
±0.1
15.8
±
0.2
5.45
±0.1
1. Gate
2. Drain
3. Source
1.4
a) Part No.
b) Lot No.
(Unit : mm)
(1)
(2)
(3)
I
D
V
DS
Characteristics
90
80
70
60
4.5V
10V
I
D
V
GS
Characteristics
100
80
V
DS
V
GS
Characteristics
(
V
DS
=
10V
)
1.0
0.8
R
e (yfs) —
I
D
Characteristics
500
(Ta = 25ºC)
(Ta = 25ºC)
(V
DS
= 10V)
100
I
D
(A)
50
40
30
20
10
0
V
GS
= 4.0V
I
D
(A)
60
40
Ta = 150°C
25°C
–55°C
0.6
Re
(yfs)
(S)
V
DS
(V)
0.4
0.2
0
I
D
= 85A
I
D
= 42A
10
–55°C
25°C
150°C
20
0
0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
6
0
2
4
6
8
10 12 14 16 18
1
1
5
10
50
100
V
DS
(V)
V
GS
(V)
V
GS
(V)
I
D
(A)
R
DS (ON)
I
D
Characteristics
6.0
5.0
Ta = 25ºC
V
GS
= 10V
R
DS (ON)
T
C
Characteristics
8.0
7.0
V
GS
= 10V
I
D
= 25A
j-c
— t
10
Characteristics
(Single pulse)
R
D
S (ON)
(mΩ)
R
D
S (ON)
(mΩ)
j-c (ºC/W)
–50
0
50
100
150
6.0
5.0
4.0
3.0
2.0
1.0
0
–100
4.0
3.0
2.0
1.0
0
0
10
20
30
40
50
60
70
80
90
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
I
D
(A)
Tc (ºC)
t (s)
Capacitance — V
DS
Characteristics
I
DR
V
SD
Characteristics
50000
Ta = 25°C
V
GS
= 0V
f = 1MHz
Ciss
90
80
70
60
P
D
T
C
Characteristics
160
140
120
(Ta = 25ºC)
Capacitance (pF)
10000
50
40
30
20
P
D
(W)
I
DR
(A)
Ta = 150°C
25°C
–55°C
100
80
60
40
20
0
1000
Crss
500
0
10
20
30
40
Coss
50
60
10
0
0
0.2 0.4
0.6
0.8
1.0
1.2 1.4
0
25
50
75
100
125
150
V
DS
(V)
V
SD
(V)
Tc (ºC)
114
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