Power Transistor Array STA464C
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
65±5
65±5
6
6 (pulse 10)
1
20 (Tc=25ºC)
4 (Ta=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
Es/b
Test Conditions
V
CB
=60V
V
EB
=6V
I
C
=50mA
V
CE
=1V, I
C
=1A
I
C
=1.5A, I
B
=15mA
I
FEC
=6A
L=10mH
min
Ratings
typ
max
10
10
70
1500
0.15
1.5
(Ta=25ºC)
Unit
External Dimensions
STA4
25.25
±0.2
80
V
V
mJ
3.5
±0.5
60
400
65
800
0.09
1.25
11.3
µA
µA
V
±0.2
±0.2
9.0
±0.2
b
a
2.3
1.0
±0.25
0.5
±0.15
(2.54)
9 •2.54= (22.86)
(Root dimension)
C1.5
±0.5
±0.05
±0.15
±0.2
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
7
6
5
30mA
20mA
10mA
V
CE
(sat) — I
C
Temperature Characteristics (typ.)
0.75
I
C
/I
B
=
100
I
C
— V
BE
Temperature Characteristics (typ.)
6
5
(V
CE
=
1V)
V
CE
(sat)
(V)
0.5
Ta=
–55ºC
25ºC
75ºC
125ºC
4
I
C
(A)
5mA
3mA
I
C
(A)
4
3
2
1
0
3
2
1
Ta
=
125ºC
75ºC
25ºC
–55ºC
0.25
I
B
=
1mA
0
1
2
3
4
5
0
0.01
0
0.1
1
10
0
0.5
1.0
1.5
V
CE
(V)
I
C
(A)
V
BE
(V)
h
FE
— I
C
Temperature Characteristics (typ.)
2000
1000
500
(V
CE
=
1V)
t
on•
t
stg •
t
f
— I
C
Characteristics
5
t
stg
t
on•
t
stg•
t
f
(µS)
1
0.5
V
CC
=
12V
I
B1
= –
I
B2
=
30mA
h
FE
100
50
0.01
0.1
Ta
=
125ºC
75ºC
25ºC
–55ºC
t
f
0.1
t
on
0
1
2
3
1
10
I
C
(A)
Ic (A)
Safe Operating Area (single pulse)
20
P
T
— Ta Derating
20
Equivalent Circuit Diagram
10
5
15
P
T
(W)
3
k
5
7
0.5
I
C
(A)
10
1
0.5
Without heatsink
natural air cooling
2
4
1
6
8
10
5
Witho
ut he
atsin
k
0.1
1
5
10
50
100
0
0
50
100
150
V
CE
(V)
Ta (ºC)
1.2
9
4.0
±0.2
0.5m
s
W
1m
s
10m
s
ith
fin
in
ite
at
he
sin
107
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