Power Transistor Array STA461C
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
Ratings
65±5
65±5
6
±6
(pulse
±10)
1
3.2 (Ta = 25ºC)
18 (Tc = 25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
Es/b
Test Conditions
V
CB
= 60V
V
EB
= 6V
I
C
= 50mA
V
CE
= 1V, I
C
= 1A
I
C
= 1.5A, I
B
= 15mA
I
FEC
= 6A
L = 10mH, single pulse
Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min
±0.2
±0.2
9.0
±0.2
(Ta=25ºC)
Unit
µA
µA
V
V
V
mJ
External Dimensions
STA4 (LF400B)
25.25
±0.2
b
a
11.3
4.7
±0.5
2.3
1.0
±0.25
0.5
±0.15
(2.54)
Typical Switching Characteristics
V
CC
(V)
12
R
L
(Ω)
12
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
30
I
B2
(mA)
–30
t
on
(µs)
0.2
t
stg
(µs)
3.9
t
f
(µs)
0.2
C1.5
±0.5±
9 • 2.54=22.86
±0.05
±0.15
±0.2
1 2 3 4
B C E
5
6
7 8 9 10
B C E
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
7
6
5
30mA
20mA
10mA
V
CE
(sat) — I
C
Temperature Characteristics (typ.)
0.75
I
C
/ I
B
=
100
I
C
— V
BE
Temperature Characteristics (typ.)
6
5
(V
CE
=
1V)
V
CE
(sat)
(V)
0.5
Ta
= –55ºC
25ºC
75ºC
125ºC
4
I
C
(A)
5mA
3mA
I
C
(A)
4
3
2
1
0
3
2
1
Ta
=
125ºC
75ºC
25ºC
–55ºC
0.25
I
B
=
1mA
0
1
2
3
4
5
0
0.01
0
0.1
1
10
0
0.5
1.0
1.5
V
CE
(V)
I
C
(A)
V
BE
(V)
h
FE
— I
C
Temperature Characteristics (typ.)
2000
1000
500
(V
CE
=
1V)
t
on•
t
stg •
t
f
— I
C
Characteristics
5
j-a
— t
Characteristics
Single pulse
10
t
stg
5
t
on•
t
stg•
t
f
(µS)
1
0.5
V
CC
=
12V
I
B1
= –
I
B2
=
30mA
(ºC/W)
1
0.5
h
FE
100
50
0.01
0.1
Ta
=
125ºC
75ºC
25ºC
–55ºC
t
f
0.1
j-a
t
on
0
1
2
3
0.1
0.05
0.1
1
10
100
2000
1
10
I
C
(A)
Ic (A)
t (ms)
Safe Operating Area (single pulse)
20
P
T
— Ta Derating
20
Equivalent Circuit Diagram
10
5
15
3
P
T
(W)
I
C
(A)
10
1
0.5
Without heatsink
natural air cooling
2
5
Witho
ut
heatsin
k
7
4
100
150
0.1
1
5
10
50
100
0
0
50
V
CE
(V)
Ta (ºC)
0.5
8
9
1.2
4.0
±0.2
0.5m
s
1m
s
10m
s
ith
W
ite
fin
in
nk
si
at
he
105
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