Power Transistor Array STA460C
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Ratings
60±10
60±10
6
±6
±10
(Pw 1ms, Du 50%)
3.2
(Ta
=
25°C)
18
(Tc
=
25°C)
150
–40 to +15
Unit
V
V
V
A
A
Electrical Characteristics
Symbol
Test Conditions
(Ta=25ºC)
External Dimensions
STA4 (LF412)
25.25
±0.2
min
Ratings
typ
P
T
Tj
Tstg
W
°C
°C
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
Es/b
V
CB
=
50V
V
EB
=
6V
I
C
=
50mA
V
CE
=
1V, I
C
=
1A
I
C
=
1.5A, I
B
=
15mA
I
FEC
=
6A
L
=
10mH,
single pulse
200
V
V
mJ
3.5
±0.5
50
700
60
1500
0.09
1.25
max
10
10
70
3000
0.15
1.5
Unit
µA
µA
V
±0.2
±0.2
11.3
9.0
±0.2
b
a
2.3
1.0
±0.25
0.5
±0.15
(2.54)
0
9•2.54 = 22.86
±0.3
0
±0.3
±0.05
±0.15
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
10
h
FE
— I
C
Characteristics (typ.)
5000
h
FE
— I
C
Temperature Characteristics (typ.)
V
CE
(sat) — I
C
Temperature Characteristics (typ.)
5000
Ta = 125°C
75°C 25°C
–55°C
(V
CE
= 1V)
typ
(V
CE
= 1V)
0.5
0.75
(I
C
/I
B
= 100)
=3
0m
A
9
8
7
6
5
4
3
2
1
0
0
20
mA
I
B
I
C
(A)
10
h
FE
5mA
3mA
h
FE
500
500
V
CE
(sat) (V)
mA
1000
1000
0.5
Ta = –55°C
25°C
75°C
125°C
0.25
1mA
100
50
100
50
0.05 0.1
0.5 1
5
10
30
0.01
0.05 0.1
0.5 1
5
10
0
0.01
0.05 0.1
0.5 1
5 10
1
2
3
4
5
30
0.01
V
CE
(V)
I
C
(A)
I
C
(A)
I
C
(A)
V
CE
(sat) — I
B
Temperature Characteristics (typ.)
0.75
I
C
— V
BE
Temperature Characteristics (typ.)
6
5
j-a
— PW
20
10
5
Characteristics
(V
CE
= 1V)
V
CE
(sat) (V)
j-a (°C/W)
0.5
4
I
C
(A)
3
2
125
°
C
1
0.5
0.25
I
C
= 3A
0.5A
0
1
5
10
50 100
500
1.5A
1
0
75°C
25
°
C
–55
°
C
Ta =
0.1
1.0
1.5
0.05
0.1
0.5 1
5 10
50 100
500 1000 2000
0
0.5
V
BE
(V)
I
B
(mA)
PW (ms)
Equivalent Circuit Diagram
P
T
— Ta Derating
20
Silicone grease used
Vertical self-excitation
Safe Operating Area
20
10
3
8
15
5
inf
t
ini
eh
P
T
(W)
I
C
(A)
10
1
0.5
2
7
5
Without heatsink
0.1
Without heatsink
0
–55
0
50
100
150
0.05
0.5
Ta=25°C
Single pulse
4
10
50 100
9
1
5
Ta (ºC)
V
CE
(V)
104
1.2
4.0
C1.5
±0.5
±0.2
±0.2
0.5
ms
1m
s
10m
W
ith
ea
tsi
nk
s
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