Power Transistor Array STA335A
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
Ratings
35±5
35±5
6
3
1
2.5 (Ta=25ºC)
12 (Tc=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
Es/b
Test Conditions
V
CB
= 30V
V
EB
= 6V
I
C
= 25mA
V
CE
= 4V, I
C
= 0.5A
I
C
= 1A, I
B
= 5mA
L = 10mH, single pulse
Ratings
10max
10max
35±5
500min
0.5max
150min
11.3
±0.2
2.3
±0.2
9.0
±0.2
(Ta=25ºC)
Unit
µA
µA
V
V
mJ
External Dimensions
STA3 (LF400A)
20.2
±0.2
b
a
4.7
±0.5
0.5
±0.15
Typical Switching Characteristics
V
CC
(V)
12
R
L
(Ω)
12
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
5
t
on
(µs)
1.3
t
stg
(µs)
4.7
t
f
(µs)
1.2
C1.5
±0.5
1.0
±0.25
7•2.54=17.78
±0.25
(2.54)
0.5
±0.15
1
2
C
3
B
4
E
5
E
6
B
7
C
8
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
A
10
m
A
V
CE
(sat) — I
B
Temperature Characteristics
1
5mA
4mA
3mA
(I
C
=
1A)
I
C
— V
BE
Temperature Characteristics (typ.)
4
V
CE
=
4V
3
15m
8m
A
A
6m
3
V
CE
(sat)
(V)
2
2mA
I
B
=1mA
I
C
(A)
I
C
(A)
0.5
1
Ta
=
125ºC
75ºC
25ºC
–55ºC
2
1
Ta
= –55ºC
25ºC
75ºC
125ºC
0
0
1
2
3
0
0.002
0.01
0.05 0.1
0.4
0
0
0.5
1.0
1.2
±0.2
4.0
±0.2
1.5
V
CE
(V)
I
B
(A)
V
BE
(V)
h
FE
— I
C
Temperature Characteristics (typ.)
5000
(V
CE
=
4V)
t
on•
t
stg•
t
f
— I
C
Characteristics (typ.)
20
j-a
— t
Characteristics
Single pulse
t
stg
20
V
CE
=
12V
I
B1
= –
I
B2
=
5mA
t
on
t
stg
t
f
(µS)
10
5
10
h
FE
1000
500
Ta
=
125ºC
75ºC
25ºC
–55ºC
(ºC/W)
t
f
t
on
0.1
0.5
1
5
j-a
5
1
0.5
1
0.5
100
0.01
0.05 0.1
0.5
1
3
0.3
0.05
0.1
0.1
1
10
100
1000
5000
I
C
(A)
Ic (A)
t (ms)
Safe Operating Area (single pulse)
10
5
10
P
T
— Ta Derating
15
(per element)
Equivalent Circuit Diagram
1m
s
10
m
s
0m
W
ith
in
fin
10
ite
he
2
at
si
nk
(A
ll
ci
rc
ui
7
DC
P
T
(W)
I
C
(A)
1
(T
c
ts
=2
op
e
C)
ra
5
Witho
ut
heatsin
te
)
3
6
0.5
k (All c
ircuits
o
perate
)
4
150
5
0.2
2
5
10
50
0
0
50
100
V
CE
(V)
Ta (ºC)
102
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