Surface-mount Power Transistor Array SDC09
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
Ratings
65±5
65±5
6
6 (pulse 10 *)
1
2.8
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
Es/b
Test Conditions
V
CB
= 60V
V
EB
= 6V
I
C
= 50mA
V
CE
= 1V, I
C
= 1A
I
C
= 1.5A, I
B
= 15mA
I
FEC
= 6A
L = 10mH, single pulse
Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min
(Ta=25ºC)
Unit
µA
µA
V
V
V
mJ
External Dimensions
SMD-16A
1.0
±0.3
0.25
0.89
±0.15
+0.15
0.75
–0.05
2.54
±0.25
16
9.8
±0.3
6.8max
3.0
±0.2
6.3
±0.2
8.0
±0.5
9
a
b
Pin 1
20.0max
19.56
±0.2
8
0 to 0.15
0.3
–0.05
+0.15
* P
W
100µs, Duty 1%
4.0max
3.6
±0.2
1.4
±0.2
a) Part No.
b) Lot No.
(Unit: mm)
■
I
C
— V
CE
Characteristics
8
7
6
5
I
B
=
30mA
20mA
10mA
5mA
3
2
1
0
0
1
2
3
1mA
3mA
■
V
CE
(sat) — I
C
Temperature Characteristics (typ.)
0.7
I
C
/I
B
=100
0.6
0.5
■
I
C
— V
BE
Temperature Characteristics (typ.)
6
5
4
Ta=150ºC
100ºC
75ºC
25ºC
–55ºC
(V
CE
= 4V)
V
CE
(sat)
(V)
I
C
(A)
I
C
(A)
0.01
0.1
0.4
0.3
0.2
0.1
0
0.0001
4
Ta=150ºC
100ºC
75ºC
25ºC
–55ºC
3
2
1
0
4
5
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
(V)
I
C
(A)
V
BE
(V)
■
h
FE
—
I
C
Temperature Characteristics
5000
V
CE
=1V
■
t
on•
t
stg•
t
f
— I
C
Characteristics
10
■
j-a
— t
Characteristics
(Single pulse)
(Use substrate 42•31•1m)
10
t
on
•
t
stg
•
t
f
(µsec)
t
stg
1
V
CC
=12V
I
B1
= –I
B2
=30mA
1000
h
FE
t
on
t
f
j-a (ºC/W)
1
100
50
0.01
Ta=150ºC
100ºC
75ºC
25ºC
–55ºC
0.1
1
10
0.1
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
0.05
0.1
1
10
100
1000
I
C
(A)
I
C
(A)
t (ms)
■
Safe Operating Area
(Single pulse)
20
10
5
1ms
1
0.5
10ms
0.5
ms
Ta=25ºC
■
P
T
— Ta Derating
6
50• 50 • 1.6mm
Use substrate
Equivalent Circuit Diagram
5
1
3
4 13 15 16
5
6
8
9 10 12
P
T
(W)
3
42•31•1.0mm
Use substrate
I
C
(A)
2
14
11
1
0.1
0.05
0.5
1
5
10
50 100
0
–50
0
50
100
150
2
7
V
CE
(V)
Ta (ºC)
98