Surface-mount Power Transistor Array SDA03
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
Ratings
–60
–60
–6
–6 (pulse –12)
–1
3 (No Fin)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
Test Conditions
V
CB
= –60V
V
EB
= –6V
I
C
= –25mA
V
CE
= –4V, I
C
= –2A
I
C
= –2A, I
B
= –0.1A
Ratings
–10max
–10max
–60min
100min
–0.4max
(Ta=25ºC)
Unit
µA
µA
V
V
External Dimensions
SMD-16A
1.0
±0.3
0.25
0.89
±0.15
+0.15
0.75
–0.05
2.54
±0.25
16
9.8
±0.3
6.8max
3.0
±0.2
6.3
±0.2
8.0
±0.5
9
a
b
Pin 1
20.0max
19.56
±0.2
8
Typical Switching Characteristics
V
CC
(V)
–12
R
L
(Ω)
12
I
C
(A)
–1
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–50
I
B2
(mA)
50
t
on
(µs)
0.4
t
stg
(µs)
1.75
t
f
(µs)
0.22
0 to 0.15
0.3
–0.05
+0.15
4.0max
1.4
±0.2
3.6
±0.2
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics
–6
–5
–4
–200mA
–100mA
–50mA
–30mA
V
CE
(sat) — I
C
Temperature Characteristics (typ.)
–3
I
C
/
I
B
=
20
I
C
— V
BE
Temperature Characteristics (typ.)
–6
–5
(V
CE
= –4V)
V
CE
(sat)
(V)
–2
I
C
(A)
–3
–2
–1
0
–20mA
I
C
(A)
Ta
=
150ºC
75ºC
25ºC
–55ºC
–4
–3
–2
–1
Ta
=
150ºC
75ºC
25ºC
–55ºC
–10mA
I
B
= –5mA
–1
0
–1
–2
–3
–4
–5
0
–0.05
–0.1
–1
–10
0
0
–0.5
–1.0
–1.5
V
CE
(V)
I
C
(A)
V
BE
(V)
h
FE
— I
C
Temperature Characteristics
1000
V
CE
= –4V
t
on •
t
stg •
t
f
— I
C
Characteristics
5
t
on
j-a
— t
Characteristics
(Single pulse)
50
(Ta
=
25ºC)
j-a (ºC/W)
500
t
on•
t
stg •
t
f
(µsec)
1
0.5
h
FE
V
CC
=
12V
I
B1
= –I
B2
=
50mA
10
5
t
f
100
50
30
–0.01
–0.1
Ta
=
150ºC
75ºC
25ºC
–55ºC
0.1
0.05
–0.5 –0.1
–0.5
–1
t
stg
–5
–10
1
0.3
0.001
–1
–10
0.01
0.1
1
2
I
C
(A)
I
C
(A)
t (s)
Safe Operating Area
(Single pulse)
–20
–10
10
m
P
T
— Ta Derating
4
Equivalent Circuit Diagram
s
1m
3
s
Without heatsink
I
C
(A)
s
P
T
(W)
20
m
16
14
12
10
2
–1
–0.5
natural air cooling
Without heatsink
15
13
11
9
1
2
4
6
8
–0.1
–3
–5
–10
–50
–100
0
0
50
100
150
V
CE
(V)
Ta (ºC)
96
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