Power Transistor MN638S
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
380±50
380±50
6
6 (pulse 10)
1
60 (Tc=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE
(sat)
Test Conditions
V
CB
=330V
V
EB
=6V
I
C
=25mA
V
CE
=2V, I
C
=3A
I
C
=4A, I
B
=20mA
Ratings
10max
20max
330 to 430
1500min
1.5max
(1.4)
(Ta=25ºC)
Unit
µA
mA
V
V
External Dimensions
TO220S
10.2
±0.3
4.44
±0.2
1.3
±0.2
a
10.0
–0.5
+0.3
1.6
(1.5)
+0.2
8.6
±0.3
b
0.1
–0.1
+0.3
3.0
–0.5
1.27
±0.2
0.86
–0.1
1.2
2.54
±0.5
±0.2
+0.2
0.4
±0.1
2.54
±0.5
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
10
150mA
120mA
V
CE
(sat) — I
B
Characteristics (typ.)
3
20
mA
I
C
— V
BE
Temperature Characteristics (typ.)
10
(V
BE
=4V)
A
90m
0mA
6
A
18m
4mA
V
CE
(sat) (V)
I
C
(A)
2mA
2
I
C
(A)
mp
pe
as
tem
1
1A
(C
C
12
C (
Ca
0
0
2
4
6
0
0.2 0.5
1
5
10
50 100 200
0
0
1.0
–30º
25º
C (C
ase
se
temp
3A
e
te
erat
er
rat
5A
ure
I
B=
1mA
at
ure)
ur
5
I
C
= 7A
)
5
e)
2.0
2.4
V
CE
(V)
I
B
(mA)
V
BE
(V)
h
FE
— I
C
Characteristics (typ.)
10000
5000
1000
500
100
50
10
0.02
(V
CE
= 2V)
h
FE
— I
C
Temperature Characteristics (typ.)
Typ
10000
5000
1000
500
100
50
5ºC
12
ºC
25
5ºC
–5
(V
CE
= 2V)
j-c
j-a
(ºC/W)
j-c
j-a
—t
Characteristics
100
10
j-a
j-c
h
FE
h
FE
1
0.1
0.5
1
5
10
20
0.02
0.1
0.5 1.0
5
10
0.1
0.001
0.01
0.1
1
10
I
C
(A)
I
C
(A)
t (s)
94
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