Power Transistor MN611S
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
115±10
115±10
6
±6
(pulse
±10)
1
50 (Tc=25ºC)
1.2 (Ta=25ºC, No Fin)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
FEC
E
S/B
Test Conditions
V
CB
=105V
V
EB
=6V
I
C
=50mA
V
CE
=1V, I
C
=1A
I
C
=1.2A, I
B
=12mA
I
FEC
=6A
L=10mA
min
Ratings
typ
max
10
10
125
1500
0.12
1.5
(Ta=25ºC)
Unit
µA
µA
V
V
V
mJ
External Dimensions
TO220S
10.2
±0.3
(1.4)
4.44
±0.2
1.3
±0.2
105
400
115
800
0.08
1.25
10.0
–0.5
+0.3
a
8.6
±0.3
1.6
+0.2
b
(1.5)
0.1
–0.1
45
3.0
–0.5
+0.3
1.27
±0.2
0.86
–0.1
1.2
2.54
±0.5
±0.2
+0.2
Typical Switching Characteristics
V
CC
(V)
12
R
L
(
)
12
V
BB1
(V)
10
V
BB2
(V)
–5
I
C
(A)
1
I
B1
(mA)
30
0.4
±0.1
t
f
I
B2
t
on
t
stg
(mA) (µs) (µs) (µs)
–30
0.2typ 5.7typ 0.4typ
2.54
±0.5
a) Part No.
b) Lot No.
I
C
— V
CE
Characteristics (typ.)
8
7
6
(Ta = 25ºC)
30mA
20mA
V
CE
(sat)
— I
B
Characteristics (typ.)
0.75
I
C
= 2A
(Ta = 25ºC)
(Unit: mm)
V
CE
(sat)
(V)
I
C
(A)
5
4
3
10mA
5mA
3mA
0.5
I
C
= 1.2A
0.25
I
C
= 0.5A
0
2
1
0
0
1
2
3
4
5
6
I
B
=
1mA
0
10
100
1000
V
CE
(V)
I
B
(mA)
V
CE
(sat)
— I
B
Temperature Characteristics (typ.)
I
C
— V
BE
Temperature Characteristics (typ.)
0.75
(I
C
= 1.2A)
7
6
(V
CE
= 1V)
I
FEC
— V
FEC
Temperature Characteristics (typ.)
7
6
V
CE
(sat)
(V)
0.5
5
0.25
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
4
3
2
1
I
FEC
(A)
I
C
(A)
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
5
4
3
2
1
0
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
0
0
10
100
1000
0
0
0.5
1.0
1.5
0
0.5
1.0
1.5
I
B
(mA)
V
BE
(V)
(Ta = 25ºC)
(V
CE
= 1V)
V
FEC
(V)
h
FE
— I
C
Characteristics (typ.)
5000
h
FE
— I
C
Temperature Characteristics (typ.)
5000
(V
CE
= 1V)
t
on•
t
stg •
t
f
— I
C
Characteristics (typ.)
10
1000
typ
t
on
t
stg
t
f
(µsec)
t
stg
Ta = 25ºC
V
CC
= 12V
I
B1
= –I
B2
= 30mA
1000
h
FE
h
FE
1
100
30
0.01
100
30
0.01
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
0.1
1
10
t
f
0.1
0
t
on
1
2
3
0.1
1
10
Ic (A)
Ic (A)
Ic (A)
(ºC/W)
j-c
j-a
— t
50
Characteristics
(Single pulse)
(Tc = 25ºC)
Safe Operating Area
(Single pulse)
20
10
(Ta = 25ºC)
P
T
— Ta Derating
60
50
40
10
j-a
FR4 (70
100
1.6mm) Use substrate
j-c
j-a
j-c
1
1
P
T
=50µs
P
T
=500µs
P
T
=1ms
P
T
=10ms
P
C
(W)
I
C
(A)
30
20
0.1
0.001
Without heatsink
0.01
0.1
1
10
0.1
1
10
100 200
10
0
0
25
50
75
100
125
150
t (s)
V
CE
(V)
Ta (ºC)
93
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