Power Transistor 2SD2141
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
380±50
380±50
6
6 (pulse 10)
1
35 (Tc=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE (
sat
)
Test Conditions
V
CB
= 330V
V
EB
= 6V
I
C
= 25mA
V
CE
= 2V, I
C
= 3A
I
C
= 4A, I
B
= 20mA
Ratings
10max
20max
330 to 430
1500min
1.5max
4
(Ta=25ºC)
Unit
µA
µA
V
V
External Dimensions
TO220F (full-mold)
10.0
4.2
2.8
3.3
C0.5
8.4
a
b
16.9
1.35
1.35
0.85
2.54
2.2
2.54
3.9
0.8
2.6
(13.5)
0.45
B C E
a) Part No.
b) Lot No.
(Unit: mm)
I
C
— V
CE
Characteristics (typ.)
10
150mA
120mA
V
CE
(sat) — I
B
Characteristics (typ.)
3
20
mA
I
C
— V
BE
Temperature Characteristics (typ.)
10
( V
CE
= 4 V)
A
90m
0mA
6
A
18m
4mA
V
CE
(sat) (V)
I
C
(A)
2mA
2
I
C
(A)
tur
era
mp
1A
(C
C
C (
Ca
se
tem
p
1
12
0
0
2
4
6
0
0.2 0.5
1
5
10
50 100 200
0
0
1.0
–30º
25º
C (C
as
e tem
p
3A
as
e
te
erat
er
I
B
=
1mA
5A
at
ure)
ur
e)
5
I
C
= 7A
5
e)
2.0
2.4
V
CE
(V)
I
B
(mA)
V
BE
(V)
h
FE
— I
C
Characteristics (typ.)
10000
5000
1000
500
100
50
10
0.02
(V
CE
= 2V)
h
FE
— I
C
Temperature Characteristics (typ.)
10000
5000
1000
500
100
50
5ºC
12
ºC
25
5ºC
–5
j-a
— t
Characteristics
(V
CE
= 2V)
5
Typ
(ºC/W)
j-a
h
FE
h
FE
1
0.5
0.1
0.5
1
5
10
20
0.02
0.1
0.5 1.0
5
10
0.1
1
10
100
1000
I
C
(A)
I
C
(A)
t (ms)
f
T
— I
E
Characteristics (typ.)
40
(V
CE
= 12V)
Safe Operating Area (single pulse)
20
10
P
C
— Ta Derating
40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Typ
30
1ms
s
10m
s
0m
10
5
DC
30
W
f
T
(MHz)
P
C
(W)
1
ith
I
C
(A)
in
20
0.5
20
fin
ite
he
at
si
nk
0.1
10
0.05
Without heatsink
natural air cooling
10
0
–0.01
–0.05 –0.1
–0.5 –1
–5
0.01
1
5
10
50 100
500
2
0
Without heatsink
150
•2
100
50
50
2
10
0•2
150
0
25
50
75
100
125
150
I
E
(A)
V
CE
(V)
Ta (ºC)
89
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