Power Transistor 2SC3852
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
80
60
6
3
1
25 (Tc=25ºC)
150
–55 to +150
Unit
V
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE
(sat)
f
T
C
OB
Test Conditions
V
CB
= 80V
V
EB
= 6V
I
C
= 25mA
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 50mA
V
CE
= 12V, I
E
= –0.2A
V
CB
= 10V, f = 1MHz
Ratings
10max
100max
60min
500min
0.5max
15typ
50typ
4
(Ta=25ºC)
Unit
µA
µA
V
V
MHz
pF
External Dimensions
TO220F (full-mold)
10.0
4.2
2.8
3.3
C 0.5
8.4
a
b
16.9
3.9
0.8
2.6
Typical Switching Characteristics (common emitter)
V
CC
(V)
20
R
L
(Ω)
20
I
C
(A)
1.0
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
15
I
B2
t
on
t
stg
t
f
(mA) (µs)
(µs)
(µs)
–30 0.8typ 3.0typ 1.2typ
2.54
2.2
1.35
1.35
0.85
2.54
(13.5)
0.45
B C E
a) Part No.
b) Lot No.
(Unit : mm)
I
C
— V
CE
Characteristics (typ.)
3
I
B
=1
2m
A
V
CE
(sat) — I
B
Characteristics (typ.)
1.5
8mA
I
C
— V
BE
Temperature Characteristics (typ.)
3
(V
CE
= 4 V)
5mA
V
CE
(sat) (V)
2
1.0
2
I
C
(A)
I
C
(A)
ure
re)
ratu
se t
emp
e
–30º
C (C
as
rat
tem
2mA
1
0.5
3A
(Ca
125
0
0
1
2
3
4
5
6
0
0.001
0.005 0.01
0.05 0.1
0.5 1
0
0
0.5
25ºC
0.5mA
2A
I
C
=1A
ºC
(Ca
1mA
1
e te
mp
se
erat
pe
ure)
3mA
)
1.0 1.1
V
CE
(V)
I
B
(A)
V
BE
(V)
h
FE
— I
C
Characteristics (typ.)
2000
1000
(VCE=4V)
h
FE
— I
C
Temperature Characteristics (typ.)
2000
(V
C E
= 4 V )
j-a
— t
Characteristics
5
125ºC
500
500
–30ºC
j-a
(ºC/W)
1
V
CB
= 10V
I
E
= –2A
1000
0.5
1
Typ
1000
25ºC
h
FE
h
FE
100
0.01
0.1
0.5
1
3
100
0.01
0.1
0.5
1
3
10
100
I
C
(A)
I
C
(A)
t (ms)
f
T
— I
E
Characteristics (typ.)
30
(V
CE
= 12V)
Safe Operating Area (single pulse)
10
1m
P
C
— Ta Derating
30
5
20
f
T
(MHz)
P
C
(W)
I
C
(A)
Typ
DC
1
0.5
10
10
ms
0m
s
s
20
W
ith
f
in
in
ite
he
at
si
nk
10
Without heatsink
natural air cooling
10
0.1
0
–0.005 –0.01
–0.05 –0.1
–0.5 –1
–2
0.05
3
5
10
50
100
0
0
Without heatsink
50
100
150
I
E
(A)
V
CE
(V)
Ta (ºC)
85
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