Applying Power Semiconductors
µTrenchMOS
P-channel MOSFETs for ‘floating gate’
load switching
µTrenchMOS
Bi-directional level shifters in
I
2
C-bus interfaces
Description
The bi-directional level shifter connects two sections of
an I
2
C-bus or similar system. Each section has a different
supply voltage and different logic levels. In the bus system
shown, pull-up resistors and devices in the left section are
connected to a 3.3 V supply, while the right section
operates from a 5 V supply.
The I/O ports of the circuits have logic input levels
related to the supply voltages and an open drain output
configuration.
For correct operation of the circuit, it is essential that
MOSFETs Q1 and Q2 are capable of fully turning on at
gate-source voltages of less than 2 V.
Benefits
• Surface mount package
• Low on-state resistance
• Low threshold voltage
• Fast switching
Suitable Products
• PMR280UN
• PMN27UN
• PMV30UN
• PMF280UN
• PMGD280UN
• PMR400UN
• PMN34UN
• PMV40UN
• PMF400UN
• PMGD400UN
In today’s increasingly complex system solutions, Philips
MultiMarket Semiconductors portfolio, and specifically
our discrete semiconductor offering, plays a vital role.
To give just a brief overview of some of the many
benefits our broad power MOSFET, Integrated Power
and Bipolar products bring to individual functions and
applications, we have gathered together a number of brief
application notes. For ease of use we have sectioned
the applications for the various key MOSFET,
Integrated Power or Bipolar technologies, covering a
number of power management and control functions.
The twenty-six notes highlight the benefits and focus
products from our portfolio as well as illustrating just
how simple some of these solutions are.
Description
Modern power management systems are often required
to switch one or more power supply lines according to
the specific requirements of the system at any given time.
The power switches employed in such systems must be
capable of ‘floating’ operation, in which neither of the
main current carrying terminals is connected to 0 V.
The drive circuit arrangement shown in the diagram
allows Q1 to operate as a switch in applications in which
none of the device terminals are connected to 0 V.
Benefits
• Low threshold voltage enables operation in battery
powered applications such as mobile phones and PDAs
• Very low R
DS(on)
minimizes on-state losses, allowing the
device to conduct relatively large currents without
excessive power dissipation
• P-channel operation removes the need for charge pump
gate drive circuits
• Small industry standard, surface mount footprint, SOT23
Suitable Products
• PMV65XP
µTrenchMOS
TM
• P-channel MOSFETs for ‘floating gate’ load switching
• Bi-directional level shifters in I
2
C-bus interfaces
• Battery powered motor control
• Battery protection in Li-ion powered applications
• MOSFET gate driver stage in DC/DC converters using
TSOP6
<30 V MOSFETs
• LFPAK for DC/DC converters
• Active load circuit in DC/DC conversion
• PDA backlight supply
• Buck conversion for high-end graphics cards (VGA)
• Power switching in CCFL resonant inverters
40–100 V MOSFETs
• Low voltage DC motor control
>100 V MOSFETs
• Active clamp in AC/DC conversion
• UHP lamp driver
Triacs and SCRs
• Triac commutation monitoring without sensing resistor
• Speed controller for power tools
• Inductive DC load on AC mains
• Lamp dimmer
• Universal motor speed controller
• Improved speed control of small universal motors
• Reversible induction motor
Rectifiers & Zeners
• Ultrafast diodes for high frequency applications
• High frequency diode bridge
• Ultrafast and Hyperfast diodes for Power Factor
Correction
Integrated Power
• AC/DC converters: SMPS ICs for low
power consumer systems
• AC/DC converters: SMPS ICs for high
power consumer systems
• One-chip motor drive IC
Circuit Diagram
S
R1
D
Circuit Diagram
G
Q1
PMV65XP
V
DD
1
V
DD
2
G
3.3 V
R
p
R
p
S
D
G
R
p
R
p
5V
Data2
R2
battery
D
Q2
PMV65XN
S
bra514
load
Data1
Q1
Clock1
S
D
Clock2
G
3.3 V
CIRCUIT
Q2
5V
CIRCUIT
bra513
46
47
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