Power MOSFETs
µTRENCHMOS
V
DS
(V)
MAX
R
DS(ON)
@10V
types in
bold red italic underlined
represent products in development
MAX
R
DS(ON)
@4.5V
MAX
R
DS(ON)
@2.5V
MAX
R
DS(ON)
@1.8V
(mΩ)
200
200
200
220
240
250
250
300
300
2500
3000
(mΩ)
(mΩ)
(mΩ)
I
D
(max)
@ 25C
(A)
0.55
0.4
0.25
0.35
0.35
0.3
0.25
0.3
SOT223
TSOP6
(SOT457)
SOT23
SOT89
SOT363
SOT323
SOT416
SOT883
(MCD)
SOT54
SOT874
(nanoPAK 3333-8)
BSP122
BSS87
BS108
PML340SN
BSP89
BSP126
BSN254
BSN304
BSP130
5000
367
5000
5000
5000
6000
8000
7500
7500
10000
These products have been designed and qualified for use in computing, communications, consumer and industrial applications
For application examples please see:
P-channel MOSFETs for ‘floating gate’ load switching on page 47
Bi-directional level shifters in I
2
C-bus interfaces on page 47
Battery powered motor control on page 48
Battery protection in Li-ion powered applications on page 48
MOSFET gate driver stage in DC/DC converters using TSOP6 on page 49
Philips Part Numbering System
µTrenchMOS
TM
part numbering
Philips - Micro
(µ)TrenchMOS
TM
Philips Part Numbering System
TrenchMOS
TM
part numbering
Philips - Micro
( )TrenchMOS
TM
PMN32UN
Package identifier
N
= TSOP6 (SOT457)
W
= TSSOP8
V
= SOT23
G
= SC88 (SOT363)
F
= SC70 ((SOT323)
R
= SC75 (SOT416)
S
= SC89 (SOT490)
T
= SOT666
Z
= MCD
R
DS(ON)
in mΩ
N
= N-channel
P
= P-channel
Gate level
U
= Ultra Low - 8 V
GS
X
= Extremely Low - 12 V
GS
L
= Logic level - 15 V
GS
E
= Enhanced Logic - 20 V
GS
S
= Standard - 30 V
GS
PMWD32UN
Package identifier
N
= TSOP6 (SOT457)
W
= TSSOP8
V
= SOT23
G
= SC88 (SOT363)
F
= SC70 ((SOT323)
R
= SC75 (SOT416)
S
= SC89 (SOT490)
T
= SOT666
Z
= MCD
N
= N-channel
P
= P-channel
Gate level
U
= Ultra Low - 8 V
GS
X
= Extremely Low - 12 V
GS
L
= Logic level - 15 V
GS
E
= Enhanced Logic - 20 V
GS
S
= Standard - 30 V
GS
MSE124
R
DS(ON)
in m‰
D
= duals
MSD991
14
15