Composite Transistors
TR + SBD
Absolute Maximum
(T
a
= 25°C)
Application/
Function
V
DSS
(V)
–15
DC-DC
–15
–15
TR
I
D
(A)
–2.5
–2.5
–1.5
V
R
(V)
20
20
20
SBD
I
F
(A)
1.0
0.7
0.7
Electrical Characteristics
(T
a
= 25°C)
TR
V
CE(sat)
typ.
(V)
0.27
0.27
0.13
V
F
max.
(V)
0.45
0.45
0.45
SBD
I
R
max.
(µA)
200
200
200
P
T
(mW)
Package (JEITA, JEDEC)
Mini6-G1 (SC-74,SOT-457)
6
5
SBD
4
Tr
1
2
3
600
600
600
XN09D57
XN09D58
XN09D61
Transistor with built-in resistors + SBD
Absolute Maximum
(T
a
= 25°C)
Application/
Function
V
CEO
(V)
Digital circuit
–50
TR
I
C
(A)
– 0.08
V
R
(V)
20
SBD
I
F
(A)
0.2
V
CE(sat)
max.
(V)
0.25
Electrical Characteristics
(T
a
= 25°C)
TR
R1/R2
(kΩ)
47/47
V
F
typ.
(V)
0.5
SBD
I
R
typ.
(µA)
0.1
P
T
(mW)
1
Package
SSMini5-F2
5
SBD
Tr
4
2
3
125
UP0KG8D
Absolute Maximum
(T
a
= 25°C)
Application/
Function
V
CEO
(V)
Digital circuit
–50
TR
I
C
(A)
– 0.1
V
R
(V)
80
SBD
I
F
(A)
0.1
Electrical Characteristics
(T
a
= 25°C)
TR
V
CE(sat)
max.
(V)
0.25
R1/R2
(kΩ)
4.7/4.7
V
F
typ.
(V)
1.2
SBD
I
R
typ.
(µA)
0.1
Package (JEITA, JEDEC)
SMini6-G1 (SC-88,SOT-363)
6
5
4
SBD
P
T
(mW)
Tr1
1
2
3
150
XP0NG8A
TR + load device
Absolute Maximum
(T
a
= 25°C)
Application/
Function
V
CEO
(V)
TR
I
C
(mA)
15
CCD output circuit
20
50
40
10
CCD load device
V
max
(V)
I
max
(mA)
f
T
typ.
(MHz)
640
1 000
1 300
Electrical Characteristics
(T
a
= 25°C)
TR
h
FE
65 to 160
25 to 250
100 to 250
CCD load device
I
P
(mA)
P
T
(mW)
Package (JEITA, JEDEC)
SSMini6-F1 (SOT-666)
6
Tr
5
4
FET
1
2
3
3.5 to 5.5
3.8 to 5.2
UP05C8B
125
UP05C8G
UP05C8GF
: Under development
FET + SBD
Absolute Maximum
(T
a
= 25°C)
Application/
Function
V
DSS
(V)
DC-DC
–12
FET
I
D
(A)
–1.2
V
R
(V)
20
SBD
I
F
(A)
0.7
R
DS(ON)
typ.
(Ω)
0.35
Electrical Characteristics
(T
a
= 25°C)
FET
t
on
typ.
(ns)
15
t
off
typ.
(ns)
10
V
F
max.
(V)
0.45
SBD
I
R
max.
(µA)
200
P
T
(mW)
Package (JEITA, JEDEC)
Mini5-G1 (SC-74A)
2
SBD
4
5
FET
1
3
600
XN0NE92
J2
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