Small Signal Bipolar Transistors
SiGe HBT
Absolute Maximum
Ratings
(T
a
= 25°C)
V
CEO
(V)
I
C
(mA)
30
60
High-frquency
Amplifiers
6
100
16
14
0.8
1.0
8.0
1.6
6.0
MSG430D4
MSG330D4
MSG430C4
MSG330C4
100 to 220
17
0.6
9.0
MSG43004
MSG33004
19
h
FE
Electrical Characteristics
(T
a
= 25°C)
f
T
(GHz)
Cob
(pF)
0.3
0.4
0.5
S21e
2
(dB)
11.0
10.5
1.4
10.0
MSG43003
MSG33003
NF
(dB)
Package
(JEITA, JEDEC)
ML3-N2
(SC-101, SOT-883)
P
C
= 100 mW
MSG43001
MSG43002
SSSMini3-F1
(SOT-723)
P
C
= 100 mW
MSG33001
MSG33002
Function
SiGe HBT (Combined Products)
Absolute
Maximum Ratings
(T
a
= 25°C)
V
CEO
(V)
I
C
(mA)
30
100
High-frquency
Amplifiers
6
100/30
100 to 220
17/19
100/60
16/19
14/19
19
h
FE
Electrical Characteristics
(T
a
= 25°C)
f
T
(GHz)
Cob
(pF)
0.3
0.5
S21e
2
(dB)
11.0
10.0
1.4
NF
(dB)
Package
SSSMini6-F1
P
T
= 125 mW
MSG36E11
MSG36E33
MSG36E31
MSG36E41
1.6/1.4
1.6/1.4
MSG36C42
MSG36D42
Basic Type
Equivalent
Circuit
OSC
Buffer
Function
MSG33001 MSG33001
MSG33003 MSG33003
MSG33003 MSG33001
MSG33004 MSG33001
MSG330C4 MSG33002
MSG330D4 MSG33002
C2
E2
C1
B2
E1
B1
H
0.5/0.3 10.0/11.0
0.6/0.3
0.8/0.4
1.0/0.4
9.0/11.0
8.0/10.5
6.0/10.5
H5
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