Optical Device
Light Emitting Element
s
Infrared Ray Emitting Diode
Electrical characteristics
Absolute maximum ratings
Package
(T
a
= 25 ƒC)
(T
a
= 25 ƒC)
Features
(package
I
F
P
V
F
TYP. (V)
λ
pTYP.(nm) P
O
TYP.(mW)
No.)
(mW)
(mA) (I
F
= 300 mA) (I
F
= 30 mA) (I
F
= 30 mA)
1.2
6
150
High output, high reliability
P1
100
940
(I
F
= 50 mA)
(I
F
= 50 mA)
75
Ultra miniature double end
P2
50
940
1.2
1.5
1.25
3
150
High output, narrow beam
P4
100
940
(I
F
= 50 mA)
(I
F
= 50 mA)
1.25
8
150
High output, wide beam
P4
100
940
(I
F
= 50 mA)
(I
F
= 50 mA)
100
Horizontal output
P5
50
940
1.2
1.5
1.1
0.5 mW/sr
100
Horizontal output with lens
P6
50
940
(I
F
= 10 mA)
(I
F
= 10mA)
1.25
30 mW/sr
150
High output, narrow beam
P4
100
940
(I
F
= 50 mA)
(I
F
= 50 mA)
Small horizontal output with
1.1
0.85 mW/sr
100
P7
50
940
lens
(I
F
= 20 mA)
(I
F
= 20 mA)
Vertical high output with
1.25
11 mW/sr
150
P3
60
940
lens
(I
F
= 50 mA)
(I
F
= 50 mA)
High output with moder-
1.25
25 mW/sr
150
P4
100
940
ately wide beam
(I
F
= 50 mA)
(I
F
= 50 mA)
1.2
0.2
75
Miniature Type
P5
50
940
(I
F
= 10 mA)
(I
F
= 10 mA)
1.2
0.4
75
Ultra miniature double end
P14
50
940
(I
F
= 10 mA)
(I
F
= 10 mA)
Ultra high output with wide
beam
High speed (3 MHz)
150
100
1.27
(I
F
= 50 mA)
1.6
(I
F
= 50 mA)
950
20 mW/sr
(I
F
= 50 mA)
7 mW/sr
(I
F
= 50 mA)
P4
Type
number
SE301A
SE302A
SE303
SE303A-C
SE304
SE306
SE307-C
SE308
SE310
SE313
SE314
SE316(L)
Materials
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAlAs
on
GaAs
GaAlAs
SE1003-C
SE1103
150
50
890
P4
Package (package appearance)
Small resin
mold
Domed resin
mold
TO-18 glass
Square resin mold
Package
Package No.
P1
P2
P3
P4
P5
P6
P7
185
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