Transistor
Field Effect Transistor
s
2SK type (5/5)
Absolute maximum rating
(T
A
= 25 ƒC)
Type
number
Package
I
D
V
DSS
(V)
Electrical characteristics
(T
A
= 25 ƒC)
|y
fs
|
(S)
V
DS
(V)
DC
(A)
Pulse
(A)
P
T
T
C
=
25 °C
(W)
R
DS(on)
V
GS
MIN.
15
7
7
7
5
12
7
1
3.5
0.6
0.8
1
1
1
1
2
2
2.5
3.0
6
20
20
13
10
15
15
15
20
(V)
(½)
Applications
MAX.
0.06
0.095
0.095
0.095
0.15
0.1
0.17
5.0
1.0
7.5
7.5
4.0
4.0
4.0
2.8
2.8
2.8
2.0
1.6
1.2
0.014
0.014
0.03
0.04
0.023
0.023
0.023
0.014
Switching
I
D
(A)
I
D
(A)
TYP.
0.04
0.067
0.07
0.07
0.1
0.07
0.12
3.4
0.65
5.0
5.6
3.2
3.2
3.2
2.2
2.2
2.2
1.4
1.1
1.0
0.011
0.011
0.024
0.032
0.016
0.016
0.016
0.011
2SK2411
MP-25
2SK2412
MP-45F
2SK2413
MP-10
2SK2414
MP-3
2SK2415
MP-3
2SK2461
MP-45F
2SK2462
MP-45F
2SK2476
MP-45F
2SK2477
MP-45F
2SK2478
MP-88
2SK2479
MP-25
2SK2480
MP-45F
2SK2481
MP-25
2SK2482
MP-88
2SK2483
MP-45F
2SK2484
MP-25
2SK2485
MP-88
2SK2486
MP-88
2SK2487
MP-88
2SK2488
MP-88
2SK2498
MP-45F
2SK2499
MP-25
2SK2510
MP-45F
2SK2511
MP-88
2SK2512
MP-45F
2SK2513
MP-25
2SK2514
MP-88
2SK2515
MP-88
*: T
A
= 25°C
60
60
60
60
60
100
100
800
800
900
900
900
900
900
900
900
900
900
900
900
60
60
60
60
60
60
60
60
±30
±20
±10
±10
±8.0
±20
±15
±3.0
±10
±2.0
±3.0
±3.5
±4.0
±5.0
±3.5
±5.0
±6.0
±7.0
±8.0
±10
±50
±50
±40
±40
±45
±45
±50
±50
±120
±80
±40
±40
±32
±80
±60
±9.0
±30
±8.0
±8.0
±12
±12
±12
±10.5
±10
±12
±18
±20
±30
±200
±200
±160
±160
±180
±180
±200
±200
75
30
1.8*
20
20
35
30
40
150
30
70
35
70
100
40
75
100
120
140
150
35
75
35
80
35
75
150
150
10
10
10
10
10
10
10
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
15
10
5
5
4
10
8
2
5
1
2
2
2
3
2
3
3
4
4
5
25
25
20
20
23
23
25
25
4
4
4
4
4
4
4
10
10
10
10
10
10
10
10
10
10
10
10
10
4
4
4
4
4
4
4
4
15
10
10
10
4
10
8
2
5
1
2
2
2
3
2
3
3
4
4
5
25
25
20
20
23
23
25
25
s
Power SOP8 series
Absolute maximum rating
(T
A
= 25 ƒC)
Type
number
Package
I
D
V
DSS
(V)
Electrical characteristics
(T
A
= 25 ƒC)
|y
fs
|
(S)
V
DS
(V)
DC
(A)
Pulse
(A)
P
T
T
C
=
25 °C
(W)
R
DS(on)
V
GS
MIN.
5.0
5.0
(V)
(½)
Applications
MAX.
0.050
0.048
Under development
I
D
(A)
I
D
(A)
TYP.
0.040
0.031
5
:
µ
PA1700
5
Power SOP8
µ
PA1701
5
Power SOP8
30
20
±7
±7
±28
±28
2.0*
2.0*
10
10
3.5
3.5
4
2.5
3.5
3.5
2
*: T
A
= 25°C, Mounted on ceramic substrate of 1200 mm
0.7 mm
152
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