IC Memory
PROM
s
UV EPROM
Organiza-
Capacity tion
(words
(bits)
bits)
8M
Maximum supply
Access
current
time
Active Standby
MAX.
(ns)
(mA)
(mA)
120
150
170
120
150
170
150
170
200
100
120
150
120
5
150
170
200
100
120
150
120
150
100
120
150
120
150
50
• 40-pin DIP (600 mil)
30
• 32-pin DIP (600 mil)
50
0.1
Supply
voltage
(V)
V
PP
=
12.5±0.3
V
CC
=
5 ±10 %
Part number
Package
Remarks
1M
8 or
µ
PD27C8000
512K
16
(selectable)
1M
8
• 42-pin DIP (600 mil)
Pin-compatible with Mask ROM
µ
PD23C8000 series
Pin-compatible with Mask ROM
µ
PD23C8001E series
Pin-compatible with Mask ROM
µ
PD23C4000 series
µ
PD27C8001
30
• 32-pin DIP (600 mil)
4M
512K
8
µ
PD27C4000
or 256K
16
(selectable)
256K
16
µ
PD27C240
50
• 40-pin DIP (600 mil)
512K
8
µ
PD27C4001
Pin-compatible with Mask ROM
µ
PD23C4001E series
µ
PD27C040
50
2M
1M
256K
8
µ
PD27C020
128K
8
µ
PD27C010A
30
Pin-compatible with Mask ROM
µ
PD23C2001E series
Pin-compatible with Mask ROM
µ
PD23C1001E series
Pin-compatible with Mask ROM
µ
PD23C1024E series
5
:
64K
16
µ
PD27C210A
Under development
s
ONE TIME PROM
Organiza-
Capacity tion
(words
(bits)
bits)
8M
Access Maximum supply
current
time
Active Standby
MAX.
(ns)
(mA)
(mA)
150
170
150
170
150
170
200
120
5
150
170
200
50
0.1
Supply
voltage
(V)
V
PP
=
12.5±0.3
V
CC
=
5 ±10 %
Part number
Package
Remarks
1M
8 or
µ
PD27C8000
512K
16
(selectable)
1M
8
• 42-pin DIP (600 mil)
• 44-pin SOP (600 mil)
• 48-pin TSOP
I
(12
18 mm)
• 32-pin DIP (600 mil)
• 32-pin SOP (525 mil)
• 40-pin DIP (600 mil)
• 40-pin SOP (525 mil)
Pin-compatible with Mask ROM
µ
PD23C8000 series
Pin-compatible with Mask ROM
µ
PD23C8001E series
Pin-compatible with Mask ROM
µ
PD23C4000 series
µ
PD27C8001
30
50
4M
512K
8
µ
PD27C4000
or 256K
16
(selectable)
512K
8
µ
PD27C4001
30
• 32-pin DIP (600 mil)
• 32-pin SOP (525 mil)
• 40-pin TSOP
I
(10
20 mm)
Pin-compatible with Mask ROM
µ
PD23C4001E series
5
:
Under development
79
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