IC Memory
Dynamic RAM
s
Synchronous DRAM
Cycle time
MIN.
(ns)
(100 MHz)
(83 MHz)
(75 MHz)
(66 MHz)
Refresh
cycle
(cycles/
ms)
2K/32
Maximum supply current
Active Normal/Burst
(Grade-10, C.L.=3)
(mA)
80 mA/150 mA (MAX.)
85 mA/165 mA (MAX.)
90 mA/210 mA (MAX.)
Standby
(Power down Mode)
(mA)
2
Inter-
Self
refresh face
(mA)
2
Supply
voltage
(V)
Package
Organization
(words
bits)
4M
4
2M
8
1M
16
Part number
µ
PD4516421
10
12
µ
PD4516821
13
µ
PD4516161
15
LVTTL 3.3±0.3 • 44-pin TSOP
II
(400 mil)
• 50-pin TSOP
II
(400 mil)
C.L. = CAS Latency
s
Rambus
TM
DRAM (under development)
Organization
(words
bits)
2M
9
2M
8
Operating
frequency
(MHz)
250
200
250
200
Supply voltage (V)
Maximum supply current (mA)
Package
Part number
µ
PD488170L
µ
PD488130L
–A50
–A40
–A50
–A40
3.3 ±0.15
250
• 32-pin SVP
• 72/36-pin
SSOP
71
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