IC Memory
Dynamic RAM
s
4M Dynamic RAM (Hyper Page Mode*)
Access
time
MAX.
(ns)
60-G
70
Refresh
cycle
(cycles/
ms)
512/8
Maximum supply current
Active
(ms)
160
150
Standby
(mA)
1
Long
refresh
(
µ
A)
–
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
256K
∞
16
Part number
µ
PD424210
5±10 % • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Hyper page
Byte read/write
*
: Hyper Page Mode is equivalent to EDO
s
4M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Access
time
MAX.
(ns)
60-G
70
Refresh
cycle
(cycles/
ms)
512/128
Maximum supply current
Self
Long
Active Standby
refresh refresh
(mA)
(ms)
(
µ
A)
(
µ
A)
160
150
0.15
150
200
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
256K
∞
16
Part number
µ
PD42S4210
5±10 % • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Hyper page
Byte read/write
*
: Hyper Page Mode is equivalent to EDO
s
Low Voltage Operation 4M Dynamic RAM (Hyper Page Mode*)
Access
time
MAX.
(ns)
60
70
80
Refresh
cycle
(cycles/
ms)
512/8
Maximum supply current
Active
(ms)
80
70
60
Standby
(mA)
0.5
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
256K
∞
16
Part number
µ
PD424210AL
3.3±0.3 • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Hyper page
Byte read/write
*
: Hyper Page Mode is equivalent to EDO
s
Low Voltage Operation 4M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Access
time
MAX.
(ns)
60
70
80
Refresh
cycle
(cycles/
ms)
512/128
Maximum supply current
Self
Long
Active Standby
refresh refresh
(ms)
(mA)
(
µ
A)
(
µ
A)
80
70
60
0.08
80
100
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
256K
∞
16
Part number
µ
PD42S4210AL
3.3±0.3 • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Hyper page
Byte read/write
*
: Hyper Page Mode is equivalent to EDO
70