IC Memory
Dynamic RAM
s
4M Dynamic RAM
Access
time
MAX.
(ns)
60
70
60
70
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
1K/16
1K/128
1K/16
Maximum supply current
Active
(ms)
120
100
120
100
105
105
95
160
160
145
Standby
(mA)
1
0.2
1
Long
refresh
(
µ
A)
300
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
• 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Fast page
Byte read/write
Supply
voltage
(V)
Package
Remarks
Organization
(words
bits)
1M
4
Part number
µ
PD424400
µ
PD424400-L
5±10 % • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Fast page
512K
8
µ
PD424800
256K
16
µ
PD424260
512/8
s
4M Dynamic RAM with Self Refresh
Access
time
MAX.
(ns)
60
70
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
1K/128
1K/128
Maximum supply current
Long
Self
Active Standby
refresh refresh
(mA)
(ms)
(
µ
A)
(
µ
A)
120
100
105
105
95
160
160
145
0.15
150
200
Supply
voltage
(V)
Package
Remarks
Organization
(words
bits)
1M
4
512K
8
Part number
µ
PD42S4400
µ
PD42S4800
5±10 % • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
• 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Fast page
256K
16
µ
PD42S4260
512/128
Fast page
Byte read/write
s
Low Voltage Operation 4M Dynamic RAM
Access
time
MAX.
(ns)
60
70
80
Refresh
cycle
(cycles/
ms)
512/8
Maximum supply current
Active
(ms)
80
70
60
Standby
(mA)
0.5
Supply
voltage
(V)
Package
Remarks
Organization
(words
bits)
256K
16
Part number
µ
PD424260AL
3.3±0.3 • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Fast page
Byte read/write
s
Low Voltage Operation 4M Dynamic RAM with Self Refresh
Access
time
MAX.
(ns)
60
70
80
Refresh
cycle
(cycles/
ms)
512/128
Maximum supply current
Self
Long
Active Standby
refresh refresh
(ms)
(mA)
(
µ
A)
(
µ
A)
80
70
60
0.08
80
100
Supply
voltage
(V)
Package
Remarks
Organization
(words
bits)
256K
16
Part number
µ
PD42S4260AL
3.3±0.3 • 40-pin SOJ (400 mil)
• 44-pin TSOP
II
(400 mil)
Fast page
Byte read/write
69
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