IC Memory
Dynamic RAM
s
Low Voltage Operation 16M Dynamic RAM (Hyper Page Mode*)
Access
time
MAX.
(ns)
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/64
Maximum supply
current
Active
(mA)
80
70
60
100
90
80
100
90
80
90
80
70
150
140
130
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
• 42-pin SOJ (400 mil)
• 50-pin TSOP
II
(400 mil)
Standby
(mA)
0.5
Supply
voltage
(V)
Organization
(words
bits)
4M
4
Part number
Package
Remarks
µ
PD42164005L
3.3±0.3 • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Hyper page
µ
PD4217401L
2K/32
2M
8
µ
PD4217801L
2K/32
1M
16
µ
PD4216161L
4K/64
Hyper page +
Byte read/write
µ
PD4218161L
1K/16
*
: Hyper Page Mode is equivalent to EDO
s
Low Voltage Operation 16M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Access
time
MAX.
(ns)
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/128
Maximum supply current
Long
Self
Active Standby
refresh refresh
(mA)
(mA)
(
µ
A)
(
µ
A)
80
70
60
100
90
80
100
90
80
90
80
70
150
140
130
0.15
150
220
Supply
voltage
(V)
Package
Remarks
Organization
(words
bits)
4M
4
Part number
µ
PD42S16401L
3.3±0.3 • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Hyper page
µ
PD42S17401L
2K/128
200
2M
8
µ
PD42S17801L
2K/128
200
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
• 42-pin SOJ (400 mil)
• 50-pin TSOP
II
(400 mil)
Hyper page +
Byte read/write
1M
16
µ
PD42S16161L
4K/128
220
µ
PD42S18161L
1K/128
180
*
: Hyper Page Mode is equivalent to EDO
68
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