IC Memory
Dynamic RAM
s
Low Voltage Operation 16M Dynamic RAM
Access
time
MAX.
(ns)
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/64
Maximum supply
current
Active
(mA)
80
70
60
100
90
80
80
70
60
100
90
80
90
80
70
150
140
130
• 42-pin SOJ (400 mil)
• 50-pin TSOP
II
(400 mil)
Fast page + Byte read/write
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
–
Standby
(mA)
0.5
Supply
voltage
(V)
Organization
(words
∞
bits)
4M
∞
4
Part number
Package
Remarks
µ
PD4216400L
3.3±0.3 • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Fast page
µ
PD4217400L
2K/32
2M
∞
8
µ
PD4216800L
4K/64
µ
PD4217800L
2K/32
1M
∞
16
µ
PD4216160L
4K/64
µ
PD4218160L
1K/16
s
Low Voltage Operation 16M Dynamic RAM with Self Refresh
Access
time
MAX.
(ns)
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/128
Maximum supply current
Self
Long
Active Standby
refresh refresh
(mA)
(mA)
(
µ
A)
(
µ
A)
80
70
60
100
90
80
80
70
60
100
90
80
90
80
70
150
140
130
0.15
150
220
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
4M
∞
4
Part number
µ
PD42S16400L
3.3±0.3 • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Fast page
µ
PD42S17400L
2K/128
200
2M
∞
8
µ
PD42S16800L
4K/128
220
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
µ
PD42S17800L
2K/128
200
1M
∞
16
µ
PD42S16160L
4K/128
220
• 42-pin SOJ (400 mil)
• 50-pin TSOP
II
(400 mil)
Fast page +
Byte read/write
µ
PD42S18160L
1K/128
180
66