IC Memory
Dynamic RAM
s
16M Dynamic RAM
Access
time
MAX.
(ns)
50
60
70
80
50
60
70
80
50
60
70
80
50
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/64
Maximum supply
current
Active
(mA)
100
90
80
70
10
110
100
90
100
90
80
70
120
110
100
90
100
90
80
160
150
140
• 42-pin SOJ (400 mil)
Fast page + Byte read/write
• 50-pin TSOP
II
(400 mil)
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
Standby
(mA)
1
Supply
voltage
(V)
Organization
(words
∞
bits)
4M
∞
4
Part number
Package
Remarks
µ
PD4216400
Fast page
5±10 % • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
µ
PD4217400
2K/32
2M
∞
8
µ
PD4216800
4K/64
µ
PD4217800
2K/32
1M
∞
16
µ
PD4216160
4K/64
µ
PD4218160
1K/16
s
16M Dynamic RAM with Self Refresh
Access
time
MAX.
(ns)
50
60
70
80
50
60
70
80
50
60
70
80
50
60
70
80
60
70
80
60
70
80
Refresh
cycle
(cycles/
ms)
4K/128
Maximum supply current
Self
Long
Active Standby
refresh refresh
(mA)
(mA)
(
µ
A)
(
µ
A)
100
90
80
70
120
110
100
90
100
90
80
70
120
110
100
90
100
90
80
160
150
140
0.25
250
450
Supply
voltage
(V)
Package
Remarks
Organization
(words
∞
bits)
4M
∞
4
Part number
µ
PD42S16400
5±10 % • 26-pin SOJ (300 mil)
• 26-pin TSOP
II
(300 mil)
Fast page
µ
PD42S17400
2K/128
400
2M
∞
8
µ
PD42S16800
4K/128
450
• 28-pin SOJ (400 mil)
• 28-pin TSOP
II
(400 mil)
µ
PD42S17800
2K/128
400
1M
∞
16
µ
PD42S16160
4K/128
450
• 42-pin SOJ (400 mil)
• 50-pin TSOP
II
(400 mil)
Fast page +
Byte read/write
µ
PD42S18160
1K/128
350
65