IC Memory
Dynamic RAM
s
Low Voltage Operation 64M Dynamic RAM
Access
time
MAX.
(ns)
50
60
70
50
60
70
50
60
70
50
60
70
50
60
70
50
60
70
Refresh
cycle
(cycles/
ms)
8K/64*
Maximum supply
current
Active
(mA)
100
90
80
130
110
100
105
95
85
135
115
105
110
100
90
140
120
110
• 50-pin TSOP
II
(400 mil) Fast page + Byte read/write
Standby
(mA)
0.5
Supply
voltage
(V)
Organization
(words
bits)
16M
4
Part number
Package
Remarks
µ
PD4264400
3.3±0.3 • 32-pin SOJ (400 mil)
Fast page
• 32-pin TSOP
II
(400 mil)
µ
PD4265400
4K/64
8M
8
µ
PD4264800
8K/64*
µ
PD4265800
4K/64
4M
16
µ
PD4264160
8K/64*
µ
PD4265160
4K/64
*
CBR/Hidden Refresh: 4K/64
s
Low Voltage Operation 64M Dynamic RAM with Self Refresh
Access
time
MAX.
(ns)
50
60
70
50
60
70
50
60
70
50
60
70
50
60
70
50
60
70
Refresh
cycle
(cycles/
ms)
8K/128*
Maximum supply current
Long
Self
Active Standby
refresh refresh
(mA)
(mA)
(
µ
A)
(
µ
A)
100
90
80
130
110
100
105
95
85
135
115
105
110
100
90
140
120
110
5
:
Organization
(words
bits)
16M
4
Part number
Supply
voltage
(V)
Package
Remarks
µ
PD42S64400
5
0.2
300
300
3.3±0.3 • 32-pin SOJ (400 mil)
• 32-pin TSOP
II
(400 mil)
Fast page
µ
PD42S65400
5
4K/128
8M
8
µ
PD42S64800
5
8K/128*
µ
PD42S65800
5
4K/128
4M
16
µ
PD42S64160
5
8K/128*
• 50-pin TSOP
II
(400 mil)
µ
PD42S65160
5
4K/128
*
CBR/Hidden Refresh: 4K/128
Under development
64
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