Bipolar Junction Transistors
Small Signal Low V
CE(
sat
)
Transistors (B)
Type No.
Mark
SMD Type
V
CE
(sat) (V)
f
T
(MHz)
V
CE
I
C
I
C
I
B
V
CE
I
C
Max. (V) (mA) Max. (mA) (mA) Typ. (V) (mA)
400
-2
-50
-0.3
-500
-50
180
-10
-50
0.60
+
+
0.4
_ 0.1
0.16
_ 0.05
Internal circuit
(Top view)
5
4
Max. Ratings
V
CEO
I
C
P
C
(V)
(A) (mW) Min.
-20
-1
900
120
h
FE
Package
Outline (Unit: mm)
KTX311T
C
1
5
2
3
4
1
2
3
5
4
TSV
20
1
900
120
400
2
50
0.3
500
50
180
10
50
0.60
KTX411T
C
1
5
2
3
4
0.95
+
1.9
_ 0.2
+
2.9
_ 0.2
0.55
+
0.70
_ 0.05
KTX412T
CN
1
6
20
2
5
1.5
900
200
560
2
100
0.2
750
15
210
2
300
0.60
+
+
0.4
_ 0.1
0.16
_ 0.05
3
4
1
6
2
5
3
4
TS6
-20
-3
900
200
560
-2
-500 -0.165 -1.5A -30
160
-2
-500
0.60
*
KTX512T
DB
1
2
3
0.95
+
1.9
_ 0.2
+
2.9
_ 0.2
0.55
0.70
+0.05
_
Note)
: Package mounted on a ceramic board (600mm
2
0.8mm),
: h
FE
Grade
* : Under development
General Purpose Power Transistors
Type No.
KTA1242D
KTA1834D
KTA1040D
KTA1042D
KTA1045D
KTA1225D
KTC3072D
KTC5001D
KTC2020D
KTC2022D
KTC2025D
KTC2983D
Note)
Complementary V
CEO
(V)
-
KTC5001D
KTC2020D
KTC2022D
KTC2025D
KTC2983D
-
KTA1834D
KTA1040D
KTA1042D
KTA1045D
KTA1225D
: Tc=25
Max. Ratings
I
C
P
C
P
C
(A)
(W)
(W)
-5
-10
-3
-5
-1
-1.5
5
10
3
5
1
1.5
1
1
1
-
1
1
1
1
1
-
1
1
-
10
20
20
8
10
-
10
20
20
8
10
h
FE
Min.
100
120
100
70
100
70
120
120
100
70
100
70
Max
320
390
300
240
320
240
700
390
300
240
320
240
V
CE
(sat) (V)
f
T
(MHz)
V
CE
I
C
I
C
I
B
V
CE
I
C
(V) (mA) Max. (mA) (mA) Typ. (V) (mA)
-2
-2
-5
-5
-5
-5
2
2
5
5
5
5
-500
-500
-500
-1A
-50
-100
500
500
500
1A
50
100
-0.5
-0.25
-1.0
-2.0
-0.4
-1.5
0.4
0.25
1.0
2.0
0.4
1.5
-3A
-4A
-2A
-4A
-500
-500
3A
4A
2A
4A
500
500
-75
-50
-200
-400
-50
-50
60
50
200
400
50
50
170
150
30
30
110
100
100
150
30
30
130
100
-2
-5
-5
-5
-10
-10
6
5
5
5
10
10
-500
-1.5A
-500
-1A
Package
Outline (Unit: mm)
-20
-20
-60
-100
-120
-160
20
20
60
100
120
160
+
2.30
_ 0.2
-50
-100
50
1.5A
500
1A
50
100
DPAK
+
+
0.91
_ 0.1
0.50
_ 0.1
+
+
+
1.1
_ 0.2
6.1
_ 0.2
2.7
_ 0.2 _ 0.2
2.00
+
+
0.76
_ 0.1
+
2.30
_ 0.1
+
6.60
_ 0.2
+
5.0
_ 0.2
+
0.5
_ 0.1
0.95
Max
1.00
Max
: Ta=25 ,
Switching Power Transistors
Type No.
KTA1718D
KTA1385D
*
KTA1204D
KTA1862D
KTA1807D
KTC2815D
KTC5103D
*
KTC1804D
KTC5707D
Note)
: Typ ,
Max. Ratings
Complementary V
CEO
I
C
P
C
(V)
(A)
(W)
KTC2815D
KTC5103D
* KTC1804D
-
-
KTA1718D
KTA1385D
* KTA1204D
-
: Tc=25 ,
Max.
240
400
400
180
120
240
400
400
560
h
FE
V
CE
(V)
-2
-1
-2
-5
-5
2
1
2
2
I
C
(mA)
V
CE
(sat) (V)
I
C
I
B
(mA)
(A)
Max.
-0.5
-0.3
-0.4
-0.5
-1.0
0.5
0.3
0.4
0.24
-1
-2
-4
0.5
-0.3
1
2
4
3.5
-50
-200
-200
-100
-60
50
200
200
175
f
T
(MHz)
t
on
(
)
t
stg
(
)
(
t
f
)
Package
Outline (Unit: mm)
Typ.
100
-
130
18
28
100
-
180
330
Max.
0.1
1
0.05
0.2
0.5
0.1
1
0.05
0.03
Max.
1.0
2.5
0.45
1.8
5.0
1.0
2.5
0.5
0.42
Max.
0.1
1
+
2.30
_ 0.2
_
+
1.0
_ 0.1
-50
-60
-60
-400
-600
50
60
60
80
-2
-5
-8
-2
-1
2
5
8
8
10
15
20
10
20
10
15
20
15
-500
-2A
-500
-100
-100
500
2A
500
500
0.02
0.4
0.5
0.1
1
0.02
0.025
DPAK
+
0.90
_ 0.1
+
+
0.91
_ 0.1
0.50
_ 0.1
+
+
+
1.1
_ 0.2
6.1
_ 0.2
2.7
_ 0.2 _ 0.2
2.00
+
+
0.76
_ 0.1
+
2.30
_ 0.1
+
6.60
_ 0.2
_ 0.2
+
5.0
0.5
+0.1
0.95
Max
* : Under development
Darlington Power Transistors
Type No.
Max. Ratings
Complementary V
CEO
I
C
P
C
*
(V)
(mA)
(W)
MJD112
-100
-2A
20
Min.
1000
h
FE
V
CE
(V)
-3
I
C
(mA)
-2A
V
CE
(sat) (V)
I
C
I
B
Max. (mA) (mA)
-2
-2A
-8
f
T
(MHz)
V
CE
I
C
(V)
(mA)
Min.
25
-10
-750
DPAK
MJD112
Note) * : Tc=25
Package
Outline (Unit: mm)
+
2.30
_ 0.2
+
1.0
_ 0.1
+
0.90
_ 0.1
+
0.5
_ 0.1
MJD117
+
+
0.91
_ 0.1
0.50
_ 0.1
+
+
+
1.1
_ 0.2
6.1
_ 0.2
2.7
_ 0.2 _ 0.2
2.00
+
+
0.76
_ 0.1
+
2.30
_ 0.1
MJD117
100
2A
20
1000
3
2A
2
2A
8
25
10
750
+
6.60
_ 0.2
+
5.0
_ 0.2
0.95
Max
1.00
Max
32
http://www.kec.co.kr
+
1.0
_ 0.1
+
0.90
_ 0.1
1.00
Max
0.25
+0.25
-0.15
KTX511T
DA
-20
-1.5
900
200
560
-2
-100 -0.18 -750
-15
210
-2
-100
2.8
+0.2
-0.3
1.6
+0.2
-0.1
0.25
+0.25
-0.15
KTX312T
CM
-20
-1.5
900
200
560
-2
-100
0.18
-750
-15
210
-2
-300
+0.2
2.8
-0.3
1.6
+0.2
-0.1
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