Bipolar Junction Transistor
Small Signal Low V
CE(
sat
)
Transistor
Max. Ratings
Type No.
Mark
Complementary V
CEO
(V)
5
4
SMD Type
h
FE
V
CE(sat)
(V)
I
C
(mA)
-50
Max.
I
C
(mA)
-500
I
B
Typ.
(mA)
-50
180
f
T
(MHz)
V
CE
(V)
-10
I
C
(mA)
-50
+
1.9
_ 0.2
I
C
(A)
-1
P
C
(mW)
900
Min. Max.
V
CE
(V)
-2
Package
Outline (Unit : mm)
KTX311T
C
1
5
-20
2
3
4
120
400
-0.3
1
2
3
5
4
TSV
20
1
900
120
400
2
50
0.3
500
50
180
10
50
0.60
2.8
+0.2
-0.3
1.6
+0.2
-0.1
KTX411T
C
1
5
+
0.4
_ 0.1
0.95
+
2.9
_ 0.2
0.55
_
0.16
+ 0.05
2
3
4
*
KTX412T
CN
1
2
3
20
6
5
1.5
900
200
560
2
100
0.2
750
15
210
2
300
4
KTX511T
DA
1
6
2
5
-20
3
4
-1.5
900
200
560
-2
-100
-0.18
-750
-15
210
-2
-100
TS6
2.8
+0.2
-0.3
1.6
+0.2
-0.1
+
0.4
_ 0.1
0.95
+
0.70
_ 0.05
*
KTX512T
Note)
DB
1
2
3
-20
-3
0.8mm),
900
200
560
-2
-500
-0.165
-1.5A
-30
160
-2
-500
+
1.9
_ 0.2
+
2.9
_ 0.2
0.60
0.55
_
0.16
+ 0.05
: Package mounted on a ceramic board (600mm
2
: h
FE
Grade
* : Under development
General Purpose Power Transistor
Max. Ratings
Type No.
KTA1242D
KTA1834D
KTA1040D
KTA1042D
KTA1045D
KTA1225D
KTC3072D
KTC5001D
KTC2020D
KTC5706D
KTC5707D
KTC2022D
KTC2025D
KTC2983D
Note)
: Ta=25
,
h
FE
P
C
(W)
-
10
20
20
8
10
-
10
20
15
15
20
8
10
Min. Max.
100
120
100
70
100
70
120
120
100
200
200
70
100
70
320
390
300
240
320
240
700
390
300
560
560
240
320
240
V
CE
(V)
-2
-2
-5
-5
-5
-5
2
2
5
2
2
5
5
5
I
C
(mA)
-500
-500
-500
-1A
-50
-100
500
500
500
500
500
1A
50
100
V
CE(sat)
(V)
Max.
-0.5
-0.25
-1.0
-2.0
-0.4
-1.5
0.4
0.25
1.0
0.24
0.24
2.0
0.4
1.5
I
C
(mA)
-3A
-4A
-2A
-4A
-500
-500
3A
4A
2A
2A
3.5A
4A
500
500
I
B
(mA)
-75
-50
-200
-400
-50
-50
60
50
200
100
175
400
50
50
Typ.
170
150
30
30
110
100
100
150
30
400
330
30
130
100
f
T
(MHz)
Complementary V
CEO
(V)
-
KTC5001D
KTC2020D
KTC2022D
KTC2025D
KTC2983D
-
KTA1834D
KTA1040D
-
-
KTA1042D
KTA1045D
KTA1225D
: Tc=25
I
C
(A)
-5
-10
-3
-5
-1
-1.5
5
10
3
5
8
5
1
1.5
P
C
(W)
1
1
1
-
1
1
1
1
1
1
1
-
1
1
V
CE
(V)
-2
-5
-5
-5
-10
-10
6
5
5
10
10
5
10
10
I
C
(mA)
-500
-1.5A
-500
-1A
-50
Package
Outline (Unit : mm)
-20
-20
-60
-100
-120
-160
20
20
60
80
80
100
120
160
50
1.5A
500
500
500
1A
50
100
DPAK
+
0.76
_ 0.1
1.0
Max
+
0.91
_ 0.1
_
+
6.1
_ 0.2
2.7
+0.2 _ 0.2
+
2.0
+
1.1
_ 0.2
+
6.6
_ 0.2
+
5.0
_ 0.2
+
2.3
_ 0.2
_
1.0
+0.1
-100
_
0.5
+0.1
0.95
Max
Switching Power Transistor
Max. Ratings
Type No.
Complementary V
CEO
(V)
KTC2815D
KTC5103D
-
-
KTA1718D
KTA1385D
-
: Tc=25
h
FE
V
CE(sat)
(V)
I
C
I
C
Max.
(mA)
(mA)
-500
-2A
-100
-100
500
2A
500
-0.5
-0.3
-0.5
-1.0
0.5
0.3
0.24
-1
-2
0.5
-0.3
1
2
3.5
I
B
(mA)
-50
-200
-100
-60
50
200
175
I
C
(A)
-2
-5
-2
-1
2
5
8
V
CE
P
C
Max.
(V)
(W)
10
15
10
20
10
15
15
240
400
180
120
240
400
560
-2
-1
-5
-5
2
1
2
f
T
(MHz)
t
ON
(
)
t
STG
(
)
(
t
f
)
Package
Outline (Unit : mm)
Typ.
100
-
18
28
100
-
330
Max.
0.1
1
0.2
0.5
0.1
1
0.03
Max.
1.0
2.5
1.8
5.0
1.0
2.5
0.42
Max.
0.1
1
0.4
0.5
0.1
1
0.025
DPAK
+
0.91
_ 0.1
_
+
6.1
_ 0.2
2.7
+0.2 _ 0.2
_ 0.2
2.0
+
1.1
+
+
6.6
_ 0.2
+
5.0
_ 0.2
+
2.3
_ 0.2
KTA1718D
KTA1385D
KTA1862D
KTA1807D
KTC2815D
KTC5103D
KTC5707D
Note)
: Typ,
-50
-60
-400
-600
50
60
50
+
0.76
_ 0.1
1.0
Max
_
1.0
+0.1
_
0.5
+0.1
0.95
Max
Darlington Power Transistor
Type No.
Max. Ratings
Complementary V
CEO
I
C
P
C
(W)
(V)
(mA)
MJD112
-100
-2A
20
Min.
1000
h
FE
V
CE
(V)
-3
I
C
(mA)
-2A
V
CE
(sat) (V)
I
C
I
B
Max. (mA) (mA)
-2
-2A
-8
f
T
(MHz)
V
CE
I
C
(V)
(mA)
Min.
25
-10
-750
DPAK
MJD112
Note)
: Tc=25
Package
Outline (Unit: mm)
_
0.5
+0.1
MJD117
+
0.76
_ 0.1
1.0
Max
+
0.91
_ 0.1
_ 0.2
+
+
2.7
_ 0.2
6.1
+
+
2.0
_ 0.2
1.1
_ 0.2
+
6.6
_ 0.2
+
5.0
_ 0.2
+
2.3
_ 0.2
_
1.0
+0.1
MJD117
100
2A
20
1000
3
2A
2
2A
8
25
10
750
0.95
Max
32
+
2.3
_ 0.1
+
2.3
_ 0.1
+
2.3
_ 0.1
0.25
+0.25
-0.15
0.25
+0.25
-0.15
*
KTX312T
CM
-20
-1.5
900
200
560
-2
-100
0.18
-750
-15
210
-2
-300
+
0.70
_ 0.05
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