DISCRETE SEMICONDUCTOR
Transistors
•Bipolar Transistors
РC VCB VCE VEB IC VCE
Pin to Pin ICBO, FT, Nf, Package
Part Polarity max, max, max, max, max, hFE sat,
Compatibility µА МHz dB (Pads)
W V V V mА V
КТ220А9 KSC1623 NPN 0.2 60 50 5 100 90…180 0.3 0.1 250 SOT-23
КТ220Б9 135…270
КТ220В9 200…400
КТ220Г9 300…600
КТ3102АM BC547A NPN 0.25 50 50 5 200 100…250 0.25 0.05 200 10 ТО-92
КТ3102БM BC547B 50 50 200…500 0.05 200 10
КТ3102ВM BC548B 30 30 200…500 0.015 200 10
КТ3102ГM BC548C 20 20 400…800 0.015 200 10
КТ3102ДM BC549B 30 30 200…500 0.015 300 4
КТ3102ЕM BC238B 20 20 400…1000 0.015 300 4
КТ3102ЖM BC549C 50 50 100…250 0.05 200
КТ3102ИM 50 50 200…500 0.05 200
КТ3102КM 30 30 200…500 0.015 200
КТ3107А PNP 0.3 50 45 5 100 70…140 0.2 0.1 250 10 ТО-92
КТ3107Б BC307A 50 45 120...220 10
КТ3107В 30 25 70…140 10
КТ3107Г BC308A 30 25 120…220 10
КТ3107Д BC308B 30 25 180…460 10
КТ3107Е 25 20 120…220 4
КТ3107Ж BC309B 25 20 180…460 4
КТ3107И BC307B 50 45 180…460 10
КТ3107К BC308C 30 25 380…800 10
КТ3107Л BC309C 25 20 380…800 4
КТ3117А 2N2221 NPN 0.3 60 60 4 400 40…200 0.6 10 200 TO-18
КТ3117Б 2N2222 0.3 75 75 100…300
КТ3117А1 0.5 60 60 40…200 TO-92
КТ3126А BF506 PNP 0.15 30 30 3 30 25…100 1.2 0.5 500 5 ТО-92
КТ3126Б 60…180
KT3127A 2N4411 PNP 0.1 20 20 3 25 25…150 1.0 600 5 TO-72
KT3129A9 PNP 0.1 50 40 5 100 30…120 0.2 1.0 200 SOT-23
KT3129Б9 BC857A 50 40 80…250
KT3129B9 BC858A 30 20 80…250
KT3129Г9 BC858B 30 20 200…500
KT3129Д9 30 20 200…500
KT3130A9 BCW71 NPN 0.1 50 40 5 100 100…250 0.1 150 SOT-23
KT3130Б9 BCW72 50 40 200…500 150 10
KT3130B9 BCW32 30 20 200…500 150 10
KT3130Г9 20 15 400…1000 300 10
KT3130Д9 30 20 200…500 150 4
KT3130E9 20 15 400…1000 300 4
КТ3130Ж9 30 25 100…500 150
КТ3142А 2N2369 NPN 0.36 40 40 4.5 200 40…120 0.25 0.4 500 TO-18
KT3189A9 BC847A NPN 0.225 50 45 6 100 110…220 0.6 0.015 300 10 SOT-23
KT3189Б9 BC847B 200…450
KT3189B9 BC847C 420…800
KT368A9 BF599 NPN 0.1 15 15 4 30 50…300 0.5 900 3.3 SOT-23
KT368Б9
КТ520А MPSA42 NPN 0.625 300 300 6 500 >40 0.5 100 50 TO-92
КТ520Б MPSA43 200 200 0.4
КТ521А MPSA92 PNP 0.625 300 300 5 500 >40 0.5 100 50 TO-92
КТ521Б MPSA93 200 200 0.4
KT6109A SS9012D PNP 0.625 40 20 5 500 64…91 0.6 0.1 TO-92
KT6109Б SS9012E 78…112
KT6109B SS9012F 96…135
KT6109Г SS9012G 112…166
KT6109Д SS9012H 144…202
56
DISCRETE SEMICONDUCTOR
Transistors
• Bipolar Transistors (continued)
РC VCB VCE VEB IC VCE
Pin to Pin ICBO, FT, Nf, Package
Part Polarity max, max, max, max, max, hFE sat,
Compatibility µА МHz dB (Pads)
W V V V mА V
KT6110A SS9013D 64…91
KT6110Б SS9013E 78…112
KT6110B SS9013F NPN 0.625 40 20 5 500 96…135 0.6 0.1 TO-92
KT6110Г SS9013G 112…166
KT6110Д SS9013H 144…202
KT6111A SS9014A NPN 0.45 50 45 5 100 60…150 0.3 0.05 150 10 TO-92
KT6111Б SS9014B 100…300
KT6111B SS9014C 200…600
KT6111Г SS9014D 400…1000
KT6112A SS9015A PNP 0.45 50 45 5 100 60…150 0.7 0.05 100 10 TO-92
KT6112Б SS9015B 100…300
KT6112B SS9015C 200…600
KT6113A SS9018D NPN 0.4 30 15 5 50 28…45 0.5 0.05 700 TO-92
KT6113Б SS9018E 39…60
KT6113B SS9018F 54…80
KT6113Г SS9018G 72…108
KT6113Д SS9018H 97…146
KT6113E SS9018I 132…198
KT6114A SS8050B NPN 1.0 40 25 6 1500 85…160 0.5 0.1 100 TO-92
KT6114Б SS8050C 1.0 1500 120…200
KT6114B SS8050D 1.0 1500 160…300
KT6114Г 0.7 1100 85…160
KT6114Д 0.7 1100 120…200
KT6114E 0.7 1100 160…300
KT6115A SS8550B PNP 1.0 40 25 6 1500 85…160 0.5 0.1 100 TO-92
KT6115Б SS8550C 1.0 1500 120…200
KT6115B SS8550D 1.0 1500 160…300
KT6115Г 0.7 1100 85…160
KT6115Д 0.7 1100 120…200
KT6115E 0.7 1100 160…300
KT6116A 2N5401 PNP 0.625 160 150 5 600 60…240 0.5 0.05 100 8 TO-92
КТ6116Б 2N5400 130 120 40…180 0.1
KT6117A 2N5551 NPN 0.625 180 160 6 600 80…250 0.2 0.05 100 8 TO-92
КТ6117Б 2N5550 160 140 60…250 0.25 0.1
2N5551X NPN 180 160 6 600 80…250 0.15 0.05 100 8 Onlychip
KSC1623X NPN 50 40 5 100 90…600 0.3 0.1 200 6 Only chip
KT6128A SS9016D NPN 0.4 30 20 4 25 28…45 0.3 0.1 400 5 TO-92
КТ6128Б SS9016E 39…60
КТ6128В SS9016F 54…80
KT6128Г SS9016G 72…108
KT6128Д SS9016H 97…146
KT6128Е SS9016I 132…198
KT6136A 2N3906 PNP 0.625 40 40 5 200 100…300 0.4 0.05 250 TO-92
KT6137A 2N3904 NPN 0.625 60 40 6 200 100…300 0.3 0.05 300 TO-92
BC182 NPN 0.5 60 50 6 100 120…450 0.6 0.015 150 10 TO-92
BC182A 120…220
BC182B 200…450
BC183 NPN 0.5 45 30 6 100 110…800 0.6 0.015 150 10 TO-92
BC183A 110…220
BC183B 200…450
BC183C 420…800
BC639 NPN 0.625 100 80 5 1500 ≥25 0.5 0.1 100 TO-92
BC640 PNP 0.625 100 80 5 1500 ≥25 0.5 0.1 100 TO-92
КТ646А 2SC495 NPN 1.0 60 60 4 1000 40…200 0.85 10 250 TO-126
КТ646Б 2CS496 40 40 >150 0.25 10
КТ646В 40 40 150…340 0.25 0.05
57
DISCRETE SEMICONDUCTOR
Transistors
• Bipolar Transistors (continued)
РC VCB VCE VEB IC VCE
Pin to Pin ICBO, FT, Nf, Package
Part Polarity max, max, max, max, max, hFE sat,
Compatibility µА МHz dB (Pads)
W V V V mА V
KT660A BC337 NPN 0.5 50 45 5 800 110…220 0.5 1.0 200 TO-92
KT660Б BC338 30 30 200…450
KT814A PNP 10 40 5 1500 40…275 0.6 50 40 TO-126
KT814Б BD136 50 40…275
KT814B BD138 70 40…275
KT814Г BD140 100 30…275
KT815A NPN 10 40 5 1500 40…275 0.6 50 40 TO-126
KT815Б BD135 50 40…275
KT815B BD137 70 40…275
KT815Г BD139 100 30…275
KT816A PNP 25 40 5 3000 25…275 0.6 100 3.0 TO-126
KT816Б BD234 45
KT816B BD236 60
KT816Г BD238 100
KT817A NPN 25 40 5 3000 25…275 0.6 100 3.0 TO-126
KT817Б BD233 45
KT817B BD235 60
KT817Г BD237 100
КТ8126А1 MJE13007 NPN 80 700 400 9 8000 8…60 1.0 1000 4.0 TO-220
КТ8126Б1 MJE13006 600 300
КТ8164А MJE13005 NPN 75 700 400 9 4000 8…40 1.0 1000 TO-220
КТ8164Б MJE13004 600 300
КТ8170А1 MJE13003 NPN 40 700 400 9 1500 8…40 1.0 1000 4.0 TO-126
КТ8170Б1 MJE13002 600 300 9
КТ8176А TIP31A NPN 40 60 60 5 3000 >25 1.2 3.0 TO-220
КТ8176Б TIP31B 80 80
КТ8176В TIP31C 100 100
КТ8177А TIP32A PNP 40 60 60 5 3000 >25 1.2 3.0 TO-220
КТ8177Б TIP32B 80 80
КТ8177В TIP32C 100 100
КТ8212А TIP41С NPN 65 60 60 5 6000 15…75 1.5 ICES=400 3.0 TO-220
КТ8212Б TIP41B 80 80
КТ8212В TIP41A 100 100
КТ8213А TIP42C PNP 65 60 60 5 6000 15…75 1.5 ICES=400 3.0 TO-220
КТ8213Б TIP42B 80 80
КТ8213В TIP42A 100 100
MJE2955 PNP 75 70 60 5 10000 20…100 1.1 1000 TO-220
MJE3055 NPN 75 70 60 5 10000 20…100 1.1 1000 TO-220
КТ738А TIP3055 NPN 90 70 60 5 15000 20…100 1.1 1000 TO-218
КТ739А TIP2955 PNP
КТ732А MJE4343 NPN 125 160 160 7 16000 8…15 2.0 750 1.0 TO-218
КТ733А MJE4353 PNP
КТ8224А BU2508A NPN 100 1500 700 7.5 8000 4…7 1.0 Iebo=1.0 TO-218
КТ8224Б* BU2508D 100..187
КТ8228А BU2525A NPN 125.0 1500 800 7.5 12000 5.0…9.5 5.0 Iebo=1.0 TO-218
КТ8228Б* BU2525D 80…150
КТ8229А TIP35F NPN 125.0 180 180 5 25000 15…75 1.8 Iceo=1.0 3.0 TO-218
КТ8230А TIP36F PNP 125.0 180 180 5 25000 15…75 1.8 1.0 3.0 TO-218
BUD44D2 NPN 25 700 400 9 2000 >10 0.65 0.1 TO-126
BUL44D2 NPN 40 700 400 9 5000 >10 0.65 0.1 TO-220
КТ8247А BUL45D2 NPN 75 700 400 12 5000 >22 0.5 100 TO-220
58
DISCRETE SEMICONDUCTOR
Transistors
• Bipolar Transistors (continued)
РC VCB VCE VEB IC VCE
Pin to Pin ICBO, FT, Nf, Package
Part Polarity max, max, max, max, max, hFE sat,
Compatibility µА МHz dB (Pads)
W V V V mА V
KT538A MJE13001 NPN 0.7 600 400 9 0.5 5…90 0.51000 4 TO-92
Uкэк Ikek,мА
КТ8248А1 BU2506F NPN 90 1500 700 7.5 5000 3.8…9.0 3.0 1.0 TO-218
BUH100 NPN 100 700 400 9 10000 >10 1.0 0.1 ТО-220
КТ8255А BU407 NPN 60 330 160 6 7000 >15 1.0 1.0 ТО-220
KT8270A MJE13001 NPN 0.7 600 400 9 0.5 5…90 0.5 1000 4 TO-126
KT872A BU508А NPN 100 1500 700 6 1000 1.0 4.0
KT872Б BU508 1500 700 5.0
KT872B 1200 600 >6 1.0 TO-218
KT872Г* BU508D 1500 700 1.0
with clamping diode
KT928A 2N2218 NPN 0.5 60 60 5 0.8 20…100 1.0 5.0 250 TO-126
KT928Б 2N2219 NPN 0.5 60 60 5 0.8 50…200 1.0 5.0 250 TO-126
KT928B 2N2219A NPN 0.5 75 75 5 0.8 100…300 1.0 1.0 250 TO-126
KT940A BF459 300 300
KT940Б BF458 NPN 10 250 250 5 100 >25 1.0 0.05 TO-126
KT940B 160 160
КТ969А BF469 NPN 6 300 250 5 100 50…250 1.0 0.05 60 TO-126
• Power Bipolar Darlington Transistors
РC VCB VCE VEB IC VCE
Pin to Pin ICBO, FT,
Part Polarity max, max, max, max, max, hFE sat, Package
Compatibility µА МHz
W V V V mА V
KT8115A TIP127 PNP 65 100 100 5 5000 >1000 2.0 200 4 TO-220
KT8115Б TIP126 80 80
KT8115B TIP125 60 60
KT8116A TIP122 NPN 65 100 100 5 5000 >1000 2.0 200 4 TO-220
KT8116Б TIP121 80 80
KT8116B TIP120 60 60
КТ8214А TIP110 NPN 50 60 60 5 2000 >500 2.5 1000 TO-220
КТ8214Б TIP111 80 80
КТ8214В TIP112 100 100
КТ8215А TIP115 PNP 50 60 60 5 2000 >500 2.5 1000 TO-220
КТ8215Б TIP116 80 80
КТ8215В TIP117 100 100
KT8156A BU807 NPN 60 330 150 6 8000 >100 1.5 1000 TO-220
КТ8156Б 200
KT8158A BDV65A NPN 125 60 60 5 12000 >1000 2.0 400 TO-218
KT8158Б BDV65B 80 80
KT8158B BDV65C 100 100
KT8159A BDV64A PNP 125 60 60 5 12000 >1000 2.0 400 TO-218
KT8159Б BDV64B 80 80
KT8159В BDV64C 100 100
КТ8225А BU941ZP NPN 155 350 350 5 15000 >300 2.7 100 TO-218
КТ8251А BDV65F NPN 125 180 180 5 10000 >100 2.0 0.4 TO-218
KT972A BD875 NPN 8.0 60 60 5 2000 >750 1.5 200 TO-126
KT972Б 45 45 >750 1.5
KT972B 60 60 750… 1.5
KT972Г 60 60 5000 0.95
750…
5000
KT973A BD876 PNP 8.0 60 60 5 2000 >750 1.5 200 TO-126
KT973Б 45 45 >750 1.5
KT973B 60 60 750… 1.5
5000
59
DISCRETE SEMICONDUCTOR
Transistors
• Unijunction Transistors
Pin to Pin P max, Vb, b2 max, Ie pulse, Ie rev, Veb sat,
Part η Package
Compatibility W V A µA V
KT132A 2N2646 0.3 35 2.0 12.0 3.5 0.56…0.75 Case 22A-01
KT132Б 2N2647 0.2 0.68…0.82
KT133A 2N4870 0.3 35 1.5 1.0 2.5 0.56…0.75 TO-92
KT133Б 2N4871 0.70…0.85
• Low Power MOSFETs
Pin to Pin P max, Vgs max, Vds max, Vgs(off), Rds(on), Id max, g fs,
Part Package
Compatibility W V V V Ohm A A/V
КП501А ZVN2120 0.5 ±20 240 1.0…3.0 10 10 >0.1 TO-92
КП501Б 200 1.0…3.0 10
КП501В 200 15
КП502А BSS124 1.0 ±10 400 1.5…2.5 28 0.12 0.1 TO-92
КП504А BSS88 1.0 ±10 250 0.6…1.2 8 0.32 0.14 TO-92
КП504Б 1.0 250 8
КП504В 0.7 200 8
КП504Г 0.7 180 10
КП504Д 0.7 200 8
КП504Е 0.7 200 8
КП505А BSS295 1.0 ±10 50 0.8…2.0 0.3 1.4 0.5 TO-92
КП505Б 1.0 50 0.8…2.0 0.3 0.5
КП505В 1.0 60 0.8…2.0 0.3 0.5
КП505Г 0.7 8 0.4…0.8 1.2
КП509А9 BSS131 0.36 ±14 240 0.8…-2.0 16 0.1 0.06 SOT-23
КП509Б9 0.50 240 0.6…-1.2 8 0.25 0.14
КП509В9 0.36 200 0.8…-2.0 16 0.1 0.06
КП510A9 IRML2402 0.54 ±12 20 0.7…-1.6 0.25 1.2 1.3 SOT-23
КП523А BSS297 1.0 ±20 200 0.8…2.0 2.0 0.48 0.5 TO-92
КП523Б 1.0 ±14 200 0.8…2.0 4.0 0.34 0.5
КП214А9 2N7002LT1 0.2 ±40 60 1.0…2.5 7.5 0.115 0.08 SOT-23
• Logic Level N-Channel MOSFETs
Pin to Pin Vds max, Rds (on) Id max, Vgs max, P max, Vgs (th),
Part Package
Compatibility V Ohm A V W V
КП723Г IRLZ44 60 0.028 50 ±10 150 1.0…2.0 TO-220
КП727В IRLZ34 60 0.05 30 ±10 88 1.0…2.0 TO-220
КП744Г IRL520 100 0.27 9.2 ±10 60 1.0…2.0 TO-220
КП745Г IRL530 100 0.22 15 ±10 88 1.0…2.0 TO-220
КП746Г IRL540 100 0.077 28 ±10 150 1.0…2.0 TO-220
КП737Г IRL630 200 0.4 18 ±10 50 1.0…2.0 TO-220
КП750Г IRL640 200 0.18 18 ±10 50 1.0…2.0 TO-220
КП775А 2SK2498А-В 60 0.009 50 ±20 150 1.0…2.0 TO-220
КП775Б 55 0.009 1.0…2.0
КП775В 60 0.011 1.0…2.0
• Power N-Channel MOSFETs
Pin to Pin Vds max, Rds (on), Id max, Vgs max, P max, Vgs (th),
Part Package
Compatibility V Ohm A V W V
КП723А IRFZ44 60 0.028 50 ±20 150 2.0…4.0 TO-220
КП723Б IRFZ45 60 0.035 50
КП723В IRFZ40 50 0.028 50
КП726А BUZ90A 600 2.0 4.0 ±20 75 2.0…4.0 TO-220
60
DISCRETE SEMICONDUCTOR
Transistors
• Power N-Channel MOSFETs (continued)
Pin to Pin Vds max, Rds (on), Id max, Vgs max, P max, Vgs (th),
Part Package
Compatibility V Ohm A V W V
КП727Б IRFZ30 50 0.05 21 ±20 88 2.0…4.0 TO-220
КП727В IRFZ34 60 0.05 21
КП739А IRFZ14 60 0.2 10 ±20 43 2.0…4.0 TO-220
КП739Б IRFZ10 50 0.2 10
КП739В IRFZ15 60 0.3 8.3
КП740А IRFZ24 60 0.1 17 ±20 60 2.0…4.0 TO-220
КП740Б IRFZ20 50 0.1 17
КП740В IRFZ25 60 0.12 14
КП741А IRFZ48 60 0.018 50 ±20 190 2.0…4.0 TO-220
КП741Б IRFZ46 50 0.024 150
КП742А STH75N06 60 0.014 75 ±20 200 2.0…4.0 TO-218
КП742Б STH80N05 50 0.012 80
КП743А IRF510 100 0.54 5.6 ±20 43 2.0…4.0 TO-220
КП743Б IRF511 80 0.54 5.6 TO-126
КП743В IRF512 100 0.74 4.9
КП744А IRF520 100 0.27 9.2 ±20 60 2.0…4.0 TO-220
КП744Б IRF521 80 0.27 9.2
КП744В IRF522 100 0.36 8.0
КП745А IRF530 100 0.16 14.0 ±20 88 2.0…4.0 TO-220
КП745Б IRF531 80 0.16 14.0
КП745В IRF532 100 0.23 12.0
КП746А IRF540 100 0.077 28.0 ±20 150 2.0…4.0 TO-220
КП746Б IRF541 80 0.077 28.0
КП746В IRF542 100 0.1 25.0
КП747А IRFP150 100 0.055 41.0 ±20 230 2.0…4.0 TO-218
КП748А IRF610 200 1.5 3.3 ±20 36 2.0…4.0 TO-220
КП748Б IRF611 150 1.5 3.3
КП748В IRF612 200 2.4 2.6
КП749А IRF620 200 0.8 5.2 ±20 50 2.0…4.0 TO-220
КП749Б IRF621 150 0.8 5.2
КП749В IRF622 200 1.2 4.0
КП737А IRF630 200 0.4 9.0 ±20 74 2.0…4.0 TO-220
КП737Б IRF634 250 0.45 8.1
КП737В IRF635 200 0.68 6.5
КП750А IRF640 200 0.18 18.0 ±20 125 2.0…4.0 TO-220
КП750Б IRF641 150 0.18 18.0
КП750В IRF642 200 0.22 16.0
КП731А IRF710 400 3.6 2.0 ±20 36 2.0…4.0 TO-220
КП731Б IRF711 350 3.6 2.0
КП731В IRF712 400 5.0 1.7
КП751А IRF720 400 1.8 3.3 ±20 50 2.0…4.0 TO-220
КП751Б IRF721 350 1.8 3.3
КП751В IRF722 400 2.5 2.8
КП752А IRF730 400 1.0 5.5 ±20 74 2.0…4.0 TO-220
КП752Б IRF731 350 1.0 5.5
КП752В IRF732 400 1.5 4.5
Pilot Production
КП753А IRF830 500 1.5 4.5 ±20 74 2.0…4.0 TO-220
КП753Б IRF831 450 1.5 4.5
КП753В IRF832 500 2.0 4.0
Pilot Production
КП771А STP40N10 100 0.04 40 ±20 150 2.0…4.0 TO-220
КП776А IRF740 400 0.55 10.0 ±20 125 2.0…4.0 TO-220
КП776Б IRF741 350 0.55 10.0
КП776В IRF742 400 0.8 8.3
КП776Г IRF744 450 0.63 8.8
Pilot Production
61
DISCRETE SEMICONDUCTOR
Transistors
• Power N-Channel MOSFETs (continued)
Pin to Pin Vds max, Rds (on), Id max, Vgs max, P max, Vgs (th),
Part Package
Compatibility V Ohm A V W V
КП777А IRF840 500 0.85 8.0 ±20 125 2.0…4.0 TO-220
КП777Б IRF841 450 0.85 8.0
КП777В IRF842 500 1.1 7.0
Pilot Production
КП778А IRFP250 200 0.085 30.0 ±20 190 2.0…4.0 TO-220
КП779А IRFP450 500 0.4 14.0 ±20 190 2.0…4.0 TO-220
Pilot Production
КП780А IRF820 500 3.0 2.5 ±20 50 2.0…4.0 TO-220
КП780Б IRF821 450 3.0 2.5
КП780В IRF822 500 4.0 2.2
КП781А IRFP350 400 0.3 16.0 ±20 190 2.0…4.0 TO-220
Pilot Production
КП783А IRF3205 55 0.008 70.0 ±20 200 2.0…4.0 TO-220
Pilot Production
КП786А Pilot BUZ80A 800 3.0 4.0 ±20 100 2.0…4.0 TO-220
Production
КП787А Pilot BUZ91A 600 0.9 8.0 ±20 150 2.0…4.0 TO-220
Production
КП789А BUZ111S 320 0.008 80.0 ±20 250 2.1…4.0 TO-220
Pilot Production
• Power P-Channel MOSFETs
Pin to Pin Vds max, Rds (on), Id max, Vgs max, P max, Vgs (th),
Part Package
Compatibility V Ohm A V W V
КП507A BSS315 -50 0.8 -1.1 ±20 1.0 -0.8…-2.0 TO-92
КП508A BSS92 -240 20 -0.15 ±20 1.0 -0.8…-2.0 TO-92
КП784A IRF9Z34 -60 0.14 -18.0 ±20 88 -2.0…-4.0 TO-220
КП785A IRF9540 -100 0.20 -19.0 ±20 150 -2.0…-4.0 TO-220
КП796А IRF9634 -250 1.0 -4.3 ±20 74 -2.0…-4.0 TO-220
Under
Development
62