T V S D i o d e s a n d I n f i n e o n
®
H i P A C
Antenna/RF Protection
Type
D = Dual
Characteristics
V
ESD
V
RWM
(IEC61000-4-2 contact)
[V]
[kV]
D
25
25
25
150
50
70
C
T
@
I
R
f
= 1 MHz
[pF]
[nA]
0.7
0.6
1
20
10
100
I
pp
@ 8/20 µs
V
CL
@ 8/20 µs
(IEC61000-4-5) (IEC61000-4-5)
[A]
[V]
12
6
10
7
5
12
Package Pin
1)
Conf.
BAR66
ESD0P6RFS
ESD0P6RFW
ESD1P0RFS
ESD1P0RFW
SOT23
SOT363
SOT323
SOT363
SOT323
C04
General Purpose
Type
V
ESD
(IEC61000-4-2 contact)
[kV]
ESD5V0S1U-03W
ESD5V0S2U-06
ESD5V0S4US
ESD5V0S5US
25
25
25
25
V
RWM
[V]
5
5
5
5
Characteristics
V
BR
[V]
>
5.5
>
5.5
>
5.7
>
5.7
C
T
@
f
= 1 MHz
[pF]
430
430
70
70
I
R
[µA]
20
20
5
5
SOD323
SOT23
SOT363
SOT363
Package
Type
Sensitivity
1 kHz, 94 dB SPL
[dBV/Pa]
Characteristics typ. Values
Signal to Noise
Maximum
1 Pa, A-weighted Sound Pressure Level
[dB(A)]
Total Harmonic
Distortion
<
3%
[dBSPL]
59
110
Supply
Voltage
[V]
Current
Consumption
[µA]
Package
NEW
SMM310 -42
1.5-3.3
70
HG-MMA-4-1
(4.72 x 3.76 x 1.5 mm)
Low Noise Transistors
Type/Polarity
N = NPN
P = PNP
BC860BF
BC860BW
BC860CW
P
P
P
Maximum Ratings
V
CE0
[V]
45
45
45
I
CM
[mA]
200
200
200
P
tot
f
T
I
CB0
[mW] [MHz] [nA]
250
250
250
250
250
250
< 15
< 15
< 15
V
CB0
[V]
50
50
50
Characteristics (T
A
= 25°C)
h
FE
220 - 475
220 - 475
I
C
[mA]
2
2
V
CE
[V]
5
5
5
V
CEsat
[V]
I
C
[mA]
I
B
[mA]
5
5
5
TSFP-3
SOT323
SOT323
Package
< 0.65 100
< 0.65 100
< 0.65 100
420 - 800 2
1) For explanation see pin configuration on page 25
Note: All products are available in green (ROHS compliant).
Ty p e L is t
41
Cross Reference
Packaging Info
Silicon Microphone
Packages
Selection Guide
Application Fields
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