Naming System
Power MOSFETs (> 300 V)
S
P
P
20
N
60
C
3
Company
S = Historcally Siemens
Specifications
C3 = CoolMOS C3
S5 = CoolMOS S5
Breakdown voltage
Divided by 10 (60 x 10 = 600 V)
Device
P = Power MOSFET
Package Type
A = TO220 FullPAK
B = TO263 (D
2
-PAK)
D = TO252 (D-PAK)
I = TO262 (I
2
-PAK)
N = SOT223
P = TO220
U = TO252 (I-PAK)
W = TO247
Technology
N = n-channel Transistors
Continuous Drain Current
(@
T
C
= 25˚C) [A]
Power MOSFETs (> 300 V) - CP Generation
I
P
P
60
R
099
C
P
Company
I = Infineon
Series Name
in this case CoolMOS CP for
PFC and PWM applications
R
DS(on)
[mΩ]
Device
P = Power MOSFET
Package Type
A = TO220 FullPAK
B = TO263 (D
2
-PAK)
D = TO252 (D-PAK)
I = TO262 (I
2
-PAK)
N = SOT223
P = TO220
U = TO252 (I-PAK)
W = TO247
R =
R
DS(on)
Breakdown voltage
Divided by 10 (60 x 10 = 600 V)
20
Home Index Pages Text
Previous Next
Pages: Home Index