CONTENTS
s Index...................................................................................................................................................    4


s General Information..........................................................................................................................              11
    Section 1 Lineup by Application........................................................................................................                  13
      1.1       Power Supply Use ..................................................................................................................          13
      1.2       Motor Drive Use......................................................................................................................        26
      1.3       Servo Motor/Inverter Application ............................................................................................                31
      1.4       Automotive Use ......................................................................................................................        33
      1.5       Lamp Inverter Application.......................................................................................................             36
      1.6       CRT Display Use ....................................................................................................................         37


    Section 2 Series Lineup ....................................................................................................................             39
      2.1       D Series Lineup......................................................................................................................        39
      2.2       S Series Lineup ......................................................................................................................       41
      2.3       Power MOS FET DII Series....................................................................................................                 43
      2.4       Power MOS FET DIII Series...................................................................................................                 44
      2.5       Power MOS FET DIV Series ..................................................................................................                  50
      2.6       Power MOS FET DV Series....................................................................................................                  53
      2.7       Power MOS FET Array Series................................................................................................                   54
      2.8       Power MOS FET Modules ......................................................................................................                 57
      2.9       Line-up of Each Package Outline for Same Die .....................................................................                           58


    Section 6 Standard Lead Forming Specification............................................................................... 144


    Section 7 Package Information ......................................................................................................... 149




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When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 2

Index • S Series, D Series 2SJ384(L) .............................................. 366 2SJ234(L) .............................................. 213 2SJ384(S) .............................................. 366 2SJ234(S) .............................................. 213 2SJ386................................................... 373 2SJ244................................................... 220 2SJ387(L) .............................................. 378 2SJ245(L) .............................................. 226 2SJ387(S) .............................................. 378 2SJ245(S) .............................................. 226 2SJ388(L) .............................................. 385 2SJ246(L) .............................................. 233 2SJ388(S) .............................................. 385 2SJ246(S) .............................................. 233 2SJ389(L) .............................................. 388 2SJ247................................................... 240 2SJ389(S) .............................................. 388 2SJ248................................................... 247 2SJ390................................................... 395 2SJ278................................................... 250 2SJ399................................................... 402 2SJ279(L) .............................................. 256 2SJ408(L) .............................................. 407 2SJ279(S) .............................................. 256 2SJ408(S) .............................................. 407 2SJ280(L) .............................................. 263 2SJ409(L) .............................................. 414 2SJ280(S) .............................................. 263 2SJ409(S) .............................................. 414 2SJ291................................................... 278 2SJ410................................................... 417 2SJ292................................................... 285 2SJ443................................................... 420 2SJ293................................................... 287 2SJ450................................................... 422 2SJ294................................................... 290 2SJ451................................................... 425 2SJ295................................................... 293 2SJ452................................................... 428 2SJ296(L) .............................................. 296 2SJ296(S) .............................................. 296 2SK213 .................................................. 431 2SJ297(L) .............................................. 298 2SK214 .................................................. 431 2SJ297(S) .............................................. 298 2SK215 .................................................. 431 2SJ317................................................... 300 2SK216 .................................................. 431 2SJ318(L) .............................................. 306 2SK740 .................................................. 435 2SJ318(S) .............................................. 306 2SK741 .................................................. 442 2SJ319(L) .............................................. 313 2SK970 .................................................. 449 2SJ319(S) .............................................. 313 2SK971 .................................................. 456 2SJ321................................................... 320 2SK972 .................................................. 463 2SJ322................................................... 323 2SK973(L).............................................. 470 2SJ323................................................... 326 2SK973(S) ............................................. 470 2SJ332(L) .............................................. 329 2SK974(L).............................................. 477 2SJ332(S) .............................................. 329 2SK974(S) ............................................. 477 2SJ333(L) .............................................. 336 2SK975 .................................................. 484 2SJ333(S) .............................................. 336 2SK1056 ................................................ 490 2SJ350................................................... 343 2SK1057 ................................................ 490 2SJ351................................................... 350 2SK1058 ................................................ 490 2SJ352................................................... 350 2SK1093 ................................................ 495 2SJ361................................................... 355 2SK1094 ................................................ 498 2SJ363................................................... 361 2SK1095 ................................................ 501 1

INDEX 2SK1151(L)............................................ 504 2SK1316(S) ........................................... 644 2SK1151(S) ........................................... 504 2SK1317 ................................................ 647 2SK1152(L)............................................ 504 2SK1328 ................................................ 651 2SK1152(S) ........................................... 504 2SK1329 ................................................ 651 2SK1153 ................................................ 511 2SK1540(L)............................................ 731 2SK1154 ................................................ 511 2SK1540(S) ........................................... 731 2SK1155 ................................................ 518 2SK1541(L)............................................ 731 2SK1156 ................................................ 518 2SK1541(S) ........................................... 731 2SK1157 ................................................ 525 2SK1566 ................................................ 734 2SK1158 ................................................ 525 2SK1567 ................................................ 734 2SK1159 ................................................ 532 2SK1620(L)............................................ 750 2SK1160 ................................................ 532 2SK1620(S) ........................................... 750 2SK1161 ................................................ 539 2SK1621(L)............................................ 753 2SK1162 ................................................ 539 2SK1621(S) ........................................... 753 2SK1163 ................................................ 542 2SK1622(L)............................................ 756 2SK1164 ................................................ 542 2SK1622(S) ........................................... 756 2SK1165 ................................................ 545 2SK1626 ................................................ 763 2SK1166 ................................................ 545 2SK1627 ................................................ 763 2SK1167 ................................................ 552 2SK1648(L)............................................ 777 2SK1168 ................................................ 552 2SK1648(S) ........................................... 777 2SK1169 ................................................ 559 2SK1667 ................................................ 780 2SK1170 ................................................ 559 2SK1668 ................................................ 787 2SK1254(L)............................................ 566 2SK1697 ................................................ 800 2SK1254(S) ........................................... 566 2SK1698 ................................................ 803 2SK1296 ................................................ 573 2SK1761 ................................................ 806 2SK1297 ................................................ 580 2SK1762 ................................................ 813 2SK1298 ................................................ 587 2SK1764 ................................................ 816 2SK1299(L)............................................ 590 2SK1772 ................................................ 821 2SK1299(S) ........................................... 590 2SK1773 ................................................ 827 2SK1300 ................................................ 597 2SK1775 ................................................ 834 2SK1301 ................................................ 604 2SK1807 ................................................ 837 2SK1302 ................................................ 611 2SK1808 ................................................ 840 2SK1303 ................................................ 618 2SK1809 ................................................ 843 2SK1304 ................................................ 625 2SK1831 ................................................ 846 2SK1305 ................................................ 632 2SK1832 ................................................ 846 2SK1306 ................................................ 635 2SK1835 ................................................ 849 2SK1307 ................................................ 638 2SK1836 ................................................ 856 2SK1313(L)............................................ 641 2SK1837 ................................................ 856 2SK1313(S) ........................................... 641 2SK1838(L)............................................ 863 2SK1314(L)............................................ 641 2SK1838(S) ........................................... 863 2SK1314(S) ........................................... 641 2SK1859 ................................................ 869 2SK1315(L)............................................ 644 2SK1862 ................................................ 872 2SK1315(S) ........................................... 644 2SK1863 ................................................ 872 2SK1316(L)............................................ 644 2SK1869(L)............................................ 875 2

INDEX 2SK1869(S) ........................................... 875 2SK2204 (S) ..........................................1054 2SK1880(L)............................................ 877 2SK2205 ................................................1061 2SK1880(S) ........................................... 877 2SK2206 ................................................1064 2SK1910 ................................................ 883 2SK2212 ................................................1067 2SK1918(L)............................................ 897 2SK2220 ................................................1074 2SK1918(S) ........................................... 897 2SK2221 ................................................1074 2SK1919(L)............................................ 900 2SK2225 ................................................1079 2SK1919(S) ........................................... 900 2SK2247 ................................................1086 2SK1933 ................................................ 902 2SK2278(L)............................................1091 2SK1934 ................................................ 909 2SK2278(S) ...........................................1091 2SK1947 ................................................ 916 2SK2315 ................................................1094 2SK1948 ................................................ 923 2SK2322(L)............................................1099 2SK1949(L)............................................ 930 2SK2322(S) ...........................................1099 2SK1949(S) ........................................... 930 2SK2328 ................................................1106 2SK1950 ................................................ 937 2SK2329(L)............................................1109 2SK1951 ................................................ 940 2SK2329(S) ...........................................1109 2SK1952 ................................................ 943 2SK2330(L)............................................1116 2SK1957 ................................................ 946 2SK2330(S) ...........................................1116 2SK1968 ................................................ 953 2SK2334(L)............................................1118 2SK1971 ................................................ 960 2SK2334(S) ...........................................1118 2SK2008 ................................................ 974 2SK2345 ................................................1125 2SK2059 (L)........................................... 977 2SK2346 ................................................1128 2SK2059 (S) .......................................... 977 2SK2373 ................................................1135 2SK2075 ................................................ 982 2SK2390 ................................................1140 2SK2084(L)............................................ 989 2SK2393 ................................................1147 2SK2084(S) ........................................... 989 2SK2408 ................................................1153 2SK2085 ................................................ 996 2SK2418(L)............................................1156 2SK2096 ................................................1002 2SK2418(S) ...........................................1156 2SK2097 ................................................1006 2SK2423 ................................................1163 2SK2114 ................................................1009 2SK2424 ................................................1165 2SK2115 ................................................1009 2SK2425 ................................................1167 2SK2116 ................................................1012 2SK2426 ................................................1169 2SK2117 ................................................1012 2SK2431 ................................................1171 2SK2118 ................................................1015 2SK2529 ................................................1173 2SK2119 ................................................1018 2SK2553 ................................................1180 2SK2120 ................................................1021 2SK2554 ................................................1183 2SK2121 ................................................1024 2SK2568 ................................................1190 2SK2144 ................................................1031 2SK2569 ................................................1193 2SK2174(L)............................................1034 2SK2582 ................................................1196 2SK2174(S) ...........................................1034 2SK2586 ................................................1199 2SK2175 ................................................1037 2SK2590 ................................................1202 2SK2202 ................................................1044 2SK2591 ................................................1205 2SK2203 ................................................1051 2SK2204 (L)...........................................1054 3

INDEX • Power MOS FET SOP-8 Series • Power MOS FET Module HAT1001F ..............................................1211 PM4550J................................................1431 HAT1002F ..............................................1217 PM4575J................................................1438 HAT1004F ..............................................1223 PM45100K .............................................1445 HAT1005F ..............................................1229 PM45150K .............................................1452 HAT1006F ..............................................1235 PM5050J................................................1469 HAT1007F ..............................................1241 PM5075J................................................1476 HAT1008F ..............................................1247 PM50100K .............................................1483 HAT1009F ..............................................1253 PM50150K .............................................1490 HAT2001F ..............................................1259 HAT2002F ..............................................1265 HAT2003F ..............................................1271 HAT2004F ..............................................1277 HAT2005F ..............................................1283 HAT2006F ..............................................1286 HAT2007F ..............................................1292 HAT2008F ..............................................1298 HAT2009F ..............................................1304 HAT2010F ..............................................1310 HAT3001F ..............................................1316 HAT1020R..............................................1327 HAT1023R..............................................1330 HAT1024R..............................................1333 HAT1025R..............................................1336 HAT2016R..............................................1339 HAT2020R..............................................1342 HAT2022R..............................................1345 HAT3004R..............................................1348 • Power MOS FET Array 4AJ11.....................................................1355 4AK23 ....................................................1379 4AK25 ....................................................1382 4AK26 ....................................................1385 4AM14....................................................1397 4AM15....................................................1400 4AM16....................................................1404 6AM12....................................................1411 6AM13....................................................1414 6AM14....................................................1417 HAF2001................................................1421 4

Section 1 Lineup by Application 1.1 Power Supply Use 1. Recommended products in each power range Recommended Products in Each Power Range Input Type Voltage Up to 10 W 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W Switching 100 V to 2SK1151 (3.5) 2SK1153 (2.0) 2SK1155 (1.0) 2SK1159 (0.55) 2SK1163 (0.55) 2SK1169 (0.2) power 132 V AC 2SK1152 (4.0) 2SK1154 (2.2) 2SK1156 (1.2) 2SK1160 (0.6) 2SK1164 (0.6) 2SK1170 (0.22) supply 2SK1862 (2.0) 2SK1157 (0.6) 2SK1161 (0.6) 2SK1165 (0.4) 2SK1971 (0.19) 2SK1863 (2.2) 2SK1158 (0.7) 2SK1162 (0.7) 2SK1166 (0.45) 2SK1526 (0.11) 2SK1313 (1.0) 2SK1163 (0.55) 2SK1167 (0.25) 2SK1527 (0.12) 2SK1314 (1.2) 2SK1315 (0.55) 2SK1168 (0.3) 2SK1629 (0.22) 2SK1540 (0.6) 2SK1316 (0.60) 2SK1403A (1.0) 2SK1836 (0.08) 2SK1541 (0.7) 2SK1567 (0.6) 2SK1837 (0.085) 2SK1626 (1.0) 2SK1869 (0.6) 2SK2174 (0.22) 2SK1627 (1.2) 2SK2117 (0.6) 2SK1567 (0.7) 2SK2114 (1.0) 2SK2115 (1.2) 2SK2117 (0.6) 200 V to 2SK1880 (6.5) 2SK1338 (5) 2SK1339 (5) 2SK1340 (3) 2SK1342 (1.2) 2SK1342 (1.2) 264 V AC 2SK2059 (3.8) 2SK1402A (2.0) 2SK1341 (2) 2SK1968 (0.68) 2SK1573 (0.35) 2SK1572 (3.8) 2SK1624 (1.8) 2SK1528 (3) 2SK1573 (0.35) 2SK1770 (0.5) 2SK1618 (3.8) 2SK1637 (1.8) 2SK1625 (0.9) 2SK1773 (1.5) 2SK2144 (3.8) 2SK1404 (1.0) 2SK1809 (1.1) 2SK1933 (0.9) 2SK2097 (1.8) 2SK1934 (1.2) 2SK2118 (1.0) Notes: 1. : DIII Series : DIV Series 2. Package: : DPAK : TO-220AB : TO-220FM : TO-3P : TO-92M : TO-220CFM : UPAK : TO-3PFM : LDPAK : TO-3PL : HDPAK 3. Values in ( ) show typical “on” resistance RDS(ON) (Ω ) typ. 4. Withstand voltages Input Voltage Withstand Voltages Input Voltage Withstand Voltages AC 100 V to 132 V 300 V, 350 V, 450 V, 500 V DC 5 V to 12 V 30 V, 60 V 200 V to 264 V 600 V, 800 V, 900 V, 1000 V 24 V, 48 V 100 V, 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L and S indicating long and short leads on DPAK, LDPAK and HDPAK packages. 1

LINEUP BY APPLICATION Recommended Products in Each Power Range Input Type Voltage Up to 10 W 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W DC-DC 5 V to 2SJ278 (0.6) 2SJ333 (0.1) 2SJ220 (0.065) 2SJ280 (0.03) 2SK1296 (0.024) 2SK2586 (0.007) converter 12 V DC HAT1002F (0.06) 2SK1949 (0.12) 2SJ297 (0.055) 2SK1919 (0.018) 2SK1911 (0.018) 2SK2554 (0.005) * * HAT1005F (0.13) 2SJ214 (0.13) 2SK1918 (0.03) 2SK1952 (0.018) 2SK2096 (0.018) * HAT2002F (0.03) 2SJ296 (0.075) 2SK1951 (0.03) 2SJ218 (0.033) 2SK2553 (0.007) * HAT2007F (0.05) 2SK1648 (0.055) 2SK2119 (0.03) 2SK2120 (0.018) 24 V DC 2SJ278 (0.6) 2SJ279 (0.17) 2SJ296 (0.075) 2SJ280 (0.03) 2SK1303 (0.05) 2SK1304 (0.025) 2SJ245 (0.2) 2SJ389 (0.1) 2SJ297 (0.055) 2SK1623 (0.065) * HAT1006F (0.1) 2SK1299 (0.25) 2SK1305 (0.2) 2SJ218 (0.033) * HAT2006F(0.045) 2SK1254 (0.3) 2SK1306 (0.1) 2SJ279 (0.17) 2SJ214 (0.13) 2SJ294 (0.055) 48 V DC 2SJ186 (8.0) 2SJ248 (0.25) 2SJ222 (0.12) 2SK1636 (0.22) 2SK1671 (0.075) 2SK1948 (0.047) 2SK1334 (2.5) 2SK1668 (0.4) 2SK1762 (0.23) 2SK1670 (0.075) 2SK1670 (0.075) 2SK1838 (5.5) 2SK1335 (0.5) 2SK1957 (0.33) 2SK2075 (0.1) 2SJ319 (1.7) 2SK1621 (0.4) 2SK1636 (0.22) 2SK2212 (0.3) Notes: 1. : DII Series : DIII Series : DIV Series : DV Series 2. Package: : DPAK : TO-220AB : TO-220FM : TO-3P : TO-92M : TO-220CFM : UPAK : TO-3PFM : LDPAK : TO-3PL : HDPAK * : SOP-8 3. Values in ( ) show typical “on” resistance R DS(ON) (Ω ) typ. 4. Withstand voltages Input Voltage Withstand Voltages Input Voltage Withstand Voltages AC 100 V to 132 V 300 V, 350 V, 450 V, 500 V DC 5 V to 12 V 30 V, 60 V 200 V to 264 V 600 V, 800 V, 900 V, 1000 V 24 V, 48 V 100 V, 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L and S indicating long and short leads on DPAK, LDPAK and HDPAK packages. 2

LINEUP BY APPLICATION 2. Products for notebook personal computer or wordprocessor use HA178L05A *1 Power management switch 4bit MCU ON/OFF HA16114 P/ FP HA16116 HAT1020R FP 5V ON/OFF 2SJ280 HAT1020R 9V PC HAT1020R HA16121 FP 22 V HAT1020R ON/OFF Vb 12 V *1 Battery HAT2020R P-channel MOS FET VCC Input 2SC2462 VCC (V) V DSS (V) Part Number 5 V to 9 V 12 V to 20 V 2SJ317 HAT1025R HAT1023R 12 V to 24 V 30 V HAT1020R 24 V to 40 V 60 V 2SJ389 2SJ280 Note: * Power management switch circuit 3

LINEUP BY APPLICATION • Lineup Maximum Ratings Electrical Characteristics (typ) 4V 10 V RDS(on) (Ω) RDS(on) (Ω) Part VDSS VGSS ID Pch Ciss Drive Loss Polarity Package Number*1 (V) (V) (A) (W) Typ Max Typ Max (pF) Pd (mW)*3 Pch UPAK 2SJ317 –12 ±7 –2 1*2 0.28 0.35 — — 60 1.2 2SJ278 –60 ±20 –1 1*2 0.8 1.2 0.7 0.83 180 1.8 2SJ450 –1 1*2 0.85 1.2 — — 150 1.8 DPAK 2SJ234 –30 ±20 –2.5 10 0.5 0.7 0.3 0.4 245 1.8 2SJ246 –7 20 0.18 0.25 0.12 0.17 660 5.4 2SJ333 –7 20 0.16 0.2 0.12 0.15 750 6.0 2SJ245 –60 –5 20 0.27 0.38 0.2 0.25 610 5.0 2SJ279 –5 20 0.23 0.27 0.17 0.2 690 7.0 2SJ389 –10 30 0.14 0.2 0.1 0.135 910 9.0 SOP-8 HAT1007F –20 ±20 –3.5 1 0.1 0.15 0.06 0.08 730 6.0 (EIAJ) HAT1002F –30 –3.5 1 0.1 0.13 0.06 0.07 960 7.0 HAT1005F –3.5 1 0.095 0.13 0.07 0.09 840 7.0 HAT1006F –60 –2.5 1 0.14 0.2 0.1 0.14 910 9.0 LDPAK 2SJ296 –60 ±20 –15 50 0.09 0.12 0.075 0.095 1450 15 2SJ297 –20 60 0.072 0.095 0.055 0.065 2200 21 2SJ220 –20 75 0.09 0.13 0.065 0.085 1850 13 2SJ280 –30 75 0.045 0.06 0.033 0.043 3300 35 TO-220FM 2SJ293 –60 ±20 –15 30 0.09 0.12 0.075 0.095 1450 15 2SJ294 –20 35 0.075 0.095 0.055 0.065 2200 21 2SJ295 –30 35 0.045 0.06 0.033 0.043 3300 35 TO-220CFM 2SJ321 –60 ±20 –15 30 0.09 0.12 0.075 0.095 1450 15 2SJ322 –20 35 0.075 0.095 0.055 0.065 2200 21 2SJ323 –30 35 0.045 0.06 0.033 0.043 3300 35 Nch UPAK 2SK1772 30 ±20 1 1*2 0.6 0.85 0.4 0.6 85 1.3 2SK2247 2 1*2 0.3 0.45 0.22 0.35 177 1.5 2SK1764 60 2 1*2 0.4 0.55 0.3 0.4 140 1.1 2SK2315 2 1*2 0.3 0.45 — — 175 1.5 DPAK 2SK1949 60 ±20 5 20 0.15 0.2 0.12 0.15 390 3.0 2SK2334 20 30 0.055 0.07 0.04 0.055 980 9.0 SOP-8 HAT2002F 30 ±20 5 1 0.05 0.06 0.03 0.04 860 7.0 (EIAJ) HAT2007F 4 1 0.065 0.11 0.04 0.07 680 5.0 HAT2006F 60 4 1 0.065 0.075 0.045 0.06 860 9.0 LDPAK 2SK1918 60 ±20 25 50 0.043 0.06 0.03 0.04 1450 15 2SK1919 40 75 0.023 0.028 0.018 0.022 3530 25 2SK2553 50 75 0.01 0.016 0.007 0.01 3550 35 TO-220FM 2SK1094 60 ±20 15 25 0.075 0.095 0.055 0.065 860 6.0 2SK1951 25 30 0.043 0.06 0.03 0.04 1450 15 2SK1952 40 35 0.023 0.028 0.018 0.022 3530 25 TO-220CFM 2SK2346 60 ±20 20 25 0.05 0.07 0.036 0.045 1130 10 2SK2119 25 30 0.043 0.06 0.03 0.04 1450 15 2SK2120 40 35 0.023 0.028 0.018 0.022 3530 25 2SK2529 50 35 0.01 0.016 0.007 0.01 3550 35 Notes: 1. ( ) indicates a product under development, and subject to specification changes without notice. 2. Allowable value when alumina-ceramic substrate (12.5 × 20 × 0.7 mm) is used. 3. Drive loss when f = 100 kHz and VGS = 5 V. (E.g., if f = 200 kHz, the value is doubled.) 4

LINEUP BY APPLICATION 3. Products for power management switch use Notebook PC or wordprocessor Camcorder Cellular or cordless phone Charger/ AC adapter Charger Vin Note: *Power management switch AC adapter 4 bit MCU HAT1020R * HAT1020R D/D con 5V IC HAT1020R 2SJ280 –9 V HAT1020R –22 V D/D con IC HAT1020R 12 V Vb Battery * HAT2020R Typical circuit showing application to DC/DC converter power supply of notebook PC 5

LINEUP BY APPLICATION • Lineup Main Characteristics Part VDSS ID RDS(on) (Ω) Application Package Number (V) (A) Typ Max Notebook PC, LDPAK 2SJ280 –60 –30 0.033 0.043 wordprocessor, SOP-8 HAT1002F –30 –3.5 0.06 0.07 etc. DPAK 2SJ318 –20 –5 0.09 0.13 2SJ333 –30 –7 0.1 0.14 UPAK 2SJ361 –20 –2 0.28 0.4 Camcorder SOP-8 HAT1001F –20 –3.5 0.05 0.07 DPAK 2SJ318 –5 0.09 0.13 2SJ332 –10 0.05 0.08 Cellular or MPAK 2SJ451 –20 –0.2 2.3 3.5 cordless phone UPAK 2SJ317 –12 –2 0.28 0.35 2SJ361 –20 –2 0.28 0.4 SOP-8 HAT1001F –20 –3.5 0.05 0.07 (EIAJ) HAT1004F –20 –2.5 0.1 0.12 DPAK 2SJ318 –20 –5 0.09 0.13 2SJ332 –20 –10 0.05 0.08 4. Products for use in AC adapter (camcorder charger, etc.) Power management switching circuit HRW26F Forward converter 2SJ318 HRA73 Ic Vb 2SK1572 2SJ332 HA16107 For main switching – ∆Vb 4-bit micro- Voltage/current A/D Vd controller converter –∆Vb Ic protection D/A Timer converter Time 6

LINEUP BY APPLICATION • Lineup Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch RDS(on) (Ω) ton toff Ciss Drive Loss*1 Package Number (V) (V) (A) (W) Typ Max (ns) (ns) (pF) Pd (mW) TO-220CFM 2SK2431 450 ±30 3 25 2.0 2.8 27 50 330 45 2SK2423 7 35 0.55 0.7 72 145 1150 150 2SK2424 8 0.4 0.55 75 180 1450 175 2SK2114 450 ±30 5 35 1.0 1.4 35 80 640 80 2SK2115 500 1.2 1.5 2SK2116 450 ±30 7 35 0.6 0.8 70 135 1050 125 2SK2117 500 0.7 0.9 2SK2144 600 ±30 3 25 3.8 5.0 33 95 295 40 2SK2097 4 35 1.8 2.4 38 95 600 80 2SK2118 5 35 1.1 1.5 57 160 1000 130 TO-220AB 2SK2328 650 ±30 7 75 1.0 1.4 65 150 1180 150 2SK1338 900 ±30 2 50 5.0 7.0 45 110 425 85 2SK1807 900 4 75 3.0 4.0 85 180 740 150 TO-220FM 2SK1862 450 ±30 3 25 2.0 2.8 27 50 330 45 2SK1863 500 2.2 3.0 2SK1626 450 ±30 5 35 1.0 1.4 35 80 640 80 2SK1627 500 1.2 1.5 2SK1566 450 ±30 7 35 0.6 0.8 70 135 1050 125 2SK1567 500 0.7 0.9 2SK1572 600 ±30 3 25 3.8 5.0 33 95 295 40 2SK1637 600 4 35 1.8 2.4 38 95 600 80 2SK1404 600 5 35 1.1 1.5 57 160 1000 130 2SK2422 650 ±30 4 35 2.0 2.6 38 95 600 80 2SK1808 900 ±30 4 35 3.0 4.0 85 180 740 150 LDPAK 2SK1313 450 ±30 5 50 1.0 1.4 35 80 640 80 2SK1314 500 1.2 1.5 2SK1540 450 ±30 7 60 0.6 0.8 70 135 1050 125 2SK1541 500 0.7 0.9 2SK1618 600 ±30 3 30 3.8 5.0 33 95 295 40 2SK1624 600 4 50 1.8 2.4 38 95 600 80 2SK1647 900 2 50 5.0 7.0 45 110 425 85 DPAK 2SK1880 600 ±30 1.5 20 6.5 8.0 35 65 250 32 2SK2059 600 3 20 3.8 5.0 33 95 295 40 Note: 1. Drive loss when f = 500 kHz and VGS = 10 V. 7

LINEUP BY APPLICATION 5. Products for machine tool use (electric discharge machine, etc.) • For electric discharge machine Power supply Reel Wire M Liquid tank L Piece 200 - 500 L kHz M Motor X M Reel NC control M Motor Y circuit VDS (voltage) I D (current) VCC 0 f = 200 kHz to 500 kHz Power MOS FET operation waveform 8

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-3P 2SK1164 500 ±30 11 100 0.55 10 90 180 1450 2SK1166 500 ±30 12 100 0.45 10 90 180 1450 2SK1168 500 ±30 15 100 0.3 13 140 220 2050 2SK1170 500 ±30 20 120 0.22 16 147 290 2800 2SK1573 600 ±30 15 125 0.35 14 140 340 3150 TO-3PL 2SK1526 450 ±30 40 250 0.11 30 235 580 5800 2SK1527 500 ±30 40 250 0.12 30 235 580 5800 2SK1629 500 ±30 30 200 0.22 20 172 300 2800 2SK1971 500 ±30 35 250 0.19 24 220 450 4320 Module PM5050J 500 ±30 50 250 0.14 30 315 390 5800 Contains 2 J/N type elements PM4575J 450 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements PM5075J 500 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements Notes: * Allowable value at TC = 25°C : indicates type with built-in high-speed diode. (trr = 100 ns to 150 ns typ) 9

LINEUP BY APPLICATION • For welding equipment Rectifier circuit Main circuit (MOS FET) Load Q1 Q2 CO2 – + AC + 200 V – Q3 Q4 PWM To MOS FET input AC 200 V Control circuit Starter circuit t ON T VCC Voltage Q 2Q 3 Current Q 1Q 4 Power MOS FET operation waveform 10

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-3P 2SK1517 450 ±30 20 120 0.20 16 165 345 3050 2SK1518 500 ±30 20 120 0.22 16 165 345 3050 TO-3PL 2SK1519 450 ±30 30 200 0.11 25 235 615 5800 2SK1520 500 ±30 30 200 0.12 25 235 615 5800 2SK1521 450 ±30 50 250 0.08 35 335 850 8700 2SK1522 500 ±30 50 250 0.085 35 335 850 8700 2SK1526 450 ±30 40 250 0.11 30 235 580 5800 2SK1527 500 ±30 40 250 0.12 30 235 580 5800 2SK1628 450 ±30 30 200 0.20 20 172 300 2800 2SK1629 500 ±30 30 200 0.22 20 172 300 2800 2SK1971 500 ±30 35 250 0.19 24 220 450 4320 Module PM4550J 450 ±30 50 250 0.14 30 315 390 5800 Contains 2 J/N type elements PM4575J 450 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements Notes: * Allowable value at TC = 25°C : indicates type with built-in high-speed diode. (trr = 100 ns to 150 ns typ) 11

LINEUP BY APPLICATION 6. Products for use in uninterruptive power supply (UPS) • Speed enhancement of built-in diode Item DIII-HF (2SK1518) DIII-H (2SK1170) Waveform photo show- i F = 20 A i F = 20 A ing reverse di/dt = 100 A/µs di/dt = 100 A/µs recovery time (trr) of built-in diode t: 200 ns/DIV t: 200 ns/DIV 2SK1518 (500 V/20 A) I: 10 A/DIV 2SK1170 (500 V/ I: 10 A/DIV t rr =120 ns 20 A) t rr = 500 ns t rr = 120 ns t rr = 500 ns Main VDSS (V) 500 500 charac- I (A) 20 20 teristics D RDS(on) Typ 0.22 0.22 (Ω) Max 0.27 0.27 12

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* 10 V RDS(on) (Ω) VGSS(OFF) trr Package Number (V) (V) (A) (W) Typ Max (V) (ns) TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 2 to 3 120 2SK1669 250 ±30 30 125 0.075 0.095 2 to 3 90 2SK1515 450 ±30 10 100 0.6 0.8 2 to 3 120 2SK1516 500 0.7 0.9 2SK2568 500 ±30 12 100 0.45 0.60 2 to 3 120 2SK1517 450 ±30 20 120 0.2 0.25 2 to 3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 2 to 3 140 2SK1519 450 ±30 30 200 0.11 0.15 2 to 3 120 2SK1520 500 0.12 0.16 2SK1521 450 ±30 50 250 0.08 0.10 2 to 3 120 2SK1522 500 0.085 0.11 TO-3P · FM 2SK2008 250 ±30 20 60 0.12 0.15 2 to 3 120 2SK1670 250 ±30 30 60 0.075 0.095 2 to 3 90 2SK1405 600 ±30 15 60 0.35 0.50 2 to 3 140 Note: * Allowable value at TC = 25°C 13

LINEUP BY APPLICATION 1.2 Motor Drive Use 1. Products for use in office equipment andother small motor driving applications Wordprocessor Motor drive PPC Printer Paper feeder Motor drive Drum driver Paper feeder 5 12 6 11 Pch 4 3 7 10 8 9 2 Nch 1 6AM12, 6AM13, 6AM14 Typical equivalent circuit 14

LINEUP BY APPLICATION • Lineup Main Characteristics Part VDSS ID Pch RDS(on) (10 V) Built-in Chip (single) Package Number (V) (A) (W) Typ Max N channel P channel SP-10 4AM11 60 5 28 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –5 0.15 0.2 4AM12 60 8 28 0.06 0.075 2SK971 × 2 2SJ173 × 2 –60 –8 0.09 0.12 4AM13 60 3 28 0.25 0.35 2SK973 × 2 2SJ182 × 2 –60 –3 0.28 0.4 SP-12 4AM16 60 8 36 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –8 0.15 0.2 6AM11 60 5 36 0.13 0.17 2SK970 × 3 2SJ172 × 3 –60 –5 0.15 0.2 4AJ11 –60 –8 28 0.09 0.13 — 2SJ173 4AK26 60 10 28 0.045 0.065 2SK972 × 4 SP-12TA 6AM12 60 7 42 0.13 0.17 2SK970 × 3 2SJ172 × 3 –60 –7 0.15 0.2 6AM13 60 10 42 0.06 0.075 2SK971 × 3 2SJ173 × 3 –60 –10 0.09 0.12 6AM14 60 7 42 0.11 0.14 (no single (no single –60 –7 0.095 0.13 chip) chip) 4AM14 60 8 32 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –8 0.15 0.2 4AM15 200 4 32 0.33 0.5 2SK1957 × 2 2SJ410 –200 –4 0.7 0.9 4AK23 100 5 32 0.2 0.3 2SK1300 × 4 — 15

LINEUP BY APPLICATION 2. Products for use in power tools and radio-controlled models Radio-controlled model M Power tool V CC M SW Pulse V CC generator circuit (battery) SW 16

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-220AB 2SK2205 30 ±20 45 75 0.011 38 260 360 3600 DIV 2SK1911 60 ±20 40 75 0.018 35 180 850 3530 DIV TO-220 2SK2206 30 ±20 45 35 0.011 38 260 360 3600 DIV CFM 2SK2120 60 ±20 40 35 0.018 35 180 850 3530 DIV 2SK2529 60 ±20 50 35 0.007 55 265 830 3550 DV LDPAK 2SK1919 60 ±20 40 75 0.018 35 180 850 3530 DIV 2SK2204 30 ±20 45 75 0.011 38 260 360 3600 DIV 2SK2553 60 ±20 50 75 0.007 55 265 830 3550 DV TO-3P 2SK2096 60 ±20 45 100 0.018 35 180 850 3530 DIV 2SK2586 60 ±20 60 125 0.007 60 295 850 3550 DV 2SK2554 60 ±20 75 150 0.0045 80 480 2100 7700 DV TO-3PFM 2SK2203 60 ±20 50 60 0.007 65 365 560 8330 DIV Note: * Allowable value at TC = 25°C 17

LINEUP BY APPLICATION 3. Products for game use Lamp and LED driver 7 7 7 Solenoid and motor driver Relay and switch substitute • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-92 2SK1336 60 ±20 0.3 0.4 1.3 0.35 6 34 33 4 V drive TO-92M 2SK975 60 ±20 1.5 0.9 0.3 1.5 15 80 140 4 V drive TO-126 2SK1270 60 ±20 2 10 0.3 1.5 15 80 140 4 V drive DPAK 2SJ182 –60 ±20 –3 20 0.28 2.7 35 245 425 4 V drive 2SK973 60 ±20 2 10 0.25 2.0 19 120 240 4 V drive 2SK974 60 ±20 3 20 0.15 4.0 30 255 400 4 V drive 2SK1299 100 ±20 3 20 0.25 4.0 40 220 400 4 V drive TO-220AB 2SK970 60 ±20 10 30 0.12 6.0 60 230 400 4 V drive 2SK1300 100 ±20 10 40 0.2 7.0 65 240 525 4 V drive TO-220FM 2SK1093 60 ±20 10 20 0.12 6.0 60 230 400 4 V drive 2SK1305 100 ±20 10 25 0.2 7.0 65 240 525 4 V drive SP-10 4AK18 60 ±20 2.5 28 0.25 2.0 19 120 240 4-element (array) array 4AK22 120 ±20 3 28 0.3 4.0 25 195 400 4-element array Note: * Allowable value at TC = 25°C 18

LINEUP BY APPLICATION 1.3 Servo Motor/Inverter Application Servo motor (machine tool) Motor driver Y AKTOMA Inverter (Air Conditioner) Inverter M Motor Convertor 19

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics 10 V RDS(on) (Ω) VDSS VGSS ID Pch trr, tf Device Package Part No. (V) (V) (A) (W) Typ Max (ns) Power High speed TO-220AB 2SK2408 500 ±30 7 60 0.7 0.9 120 MOS built-in TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 120 FET diode 2SK1669 250 30 125 0.075 0.095 90 series 2SK1515 450 10 100 0.6 0.8 120 2SK1516 500 0.7 0.9 2SK2568 500 12 100 0.45 0.6 120 2SK1517 450 20 120 0.2 0.25 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 140 2SK1519 450 30 200 0.11 0.15 120 2SK1520 500 0.12 0.16 2SK1521 450 50 250 0.08 0.1 120 2SK1522 500 0.085 0.11 TO-3P• 2SK2008 250 ±30 20 60 0.12 0.15 120 FM 2SK1670 250 30 60 0.075 0.095 90 2SK1405 600 15 60 0.35 0.5 140 Standard TO-3P 2SK1671 250 ±30 30 125 0.075 0.095 400 series TO-3PL 2SK1948 50 200 0.047 0.06 450 TO-3P 2SK1170 500 ±30 20 120 0.22 0.27 500 TO-3PL 2SK1629 30 200 0.22 0.27 600 2SK1671 35 200 0.19 0.23 530 2SK1527 45 250 0.12 0.16 600 2SK1837 50 250 0.085 0.11 620 20

LINEUP BY APPLICATION 1.4 Automotive Use Car electrical systems 2 Transmission 1 Engine 4 Instrument 5 Comfort control system panel system Fuel injector Automatic transmission Electromagnetic pump Illumination control Airconditioner (torque converter), etc. Electromagnetic Power windows valve, etc. Power mirror Power seats, etc. 6 Safety Air Bag System etc. 5 Wheel base and body control Anti-skid brakes Suspension Power steering Vehicle height control, etc. Advantages of power MOS FET use (VDSS ≤ 150 V class) Saturation voltages can be made lower than with bipolar transistors. (Ex.): Bipolar MOS FET VCE (sat) 1.8 V (at 25 A) → 0.85 V 0.85 V (at 5 A) → 0.16 V This means heat sinks can be made smaller or eliminated altogether. + Equipment can be driven directly by a 5-V power supply. Lower driving power means simpler circuits. Peripheral parts can be made more compact, and fewer parts are needed. Smaller, less expensive, and more reliable equipment can be achieved. 21

LINEUP BY APPLICATION • Lineup Application Field Part Number Package Pch VDSS/ID Ron (typ) Engine 2SK1318 TO-220FM 35 W 120 V/20 A 0.095 Ω Fuel injector 2SK1094 TO-220FM 25 W 60 V/15 A 0.055 Ω 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Electromagnetic pump 2SK1918 LDPAK 50 W 60 V/25 A 0.03 Ω Electromagnetic valve, 2SJ293 TO-220FM 30 W –60 V/–15 A 0.075 Ω etc. 2SJ245 L DPAK 20 W –60 V/–5 A 0.2 Ω 2SJ296 LDPAK 50 W –60 V/–15 A 0.075 Ω Transmission system 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Automatic transmission 2SJ294 TO-220FM 35 W –60 V/–20 A 0.055 Ω (torque converter), etc. 2SJ291 TO-220 75 W –60 V/–20 A 0.055 Ω 2SJ279 L DPAK 20 W –60 V/–5 A 0.17 Ω 2SK1648 LDPAK 50 W 60 V/15 A 0.055 Ω Wheel base and body 2SK1307 TO-220FM 35 W 100 V/20 A 0.065 Ω control 2SK1318 TO-220FM 35 W 120 V/20 A 0.095 Ω Anti-skid brakes 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Suspension 2SK974 L DPAK 20W 60 V/3 A 0.15 Ω 2SK1299 L DPAK 20 W 100 V/3 A 0.25 Ω Power steering 2SK2096 TO-3P 100 W 60 V/45 A 0.018 Ω Vehicle height control, 2SJ217 TO-3P 100 W –60 V/–45 A 0.033 Ω etc. 2SJ294 TO-220FM 35 W –60 V/–20 A 0.055 Ω 4AK16 SP-10 28 W 60 V/5 A 0.12 Ω 4AK18 SP-10 28 W 60 V/2.5 A 0.25 Ω Instrument panel 2SK1910 TO-220 50 W 60 V/25 A 0.03 Ω Illumination control 2SK971 TO-220 40 W 60 V/15 A 0.055 Ω 2SK1094 TO-220FM 25 W 60 V/15 A 0.055 Ω 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Comfort control system 2SK1304 TO-3P 100 W 100 V/40 A 0.025 Ω Airconditioner 2SK2096 TO-3P 100 W 60 V/45 A 0.018 Ω 2SK1093 TO-220FM 20 W 60 V/10 A 0.12 Ω Power windows 2SK974 L DPAK 20 W 60 V/3 A 0.15 Ω Power mirror 2SK1949 L DPAK 20 W 60 V/5 A 0.12 Ω Power seats, etc. 2SJ293 TO-220FM 30 W –60 V/–15 A 0.075 Ω 2SJ280 LDPAK 75 W –60 V/–30 A 0.033 Ω 2SJ217 TO-3P 100 W –60 V/–45 A 0.033 Ω 4AK18 SP-10 28 W 60 V/2.5 A 0.25 Ω 4AK22 SP-10 28 W 120 V/3 A 0.3 Ω 22

LINEUP BY APPLICATION • Lineup (cont) Application Field Part Number Package Pch VDSS/ID Ron (typ) Safety 2SK1579 UPAK 1W 12 V/2 A 0.36 Ω Air Bag System 2SK975 TO-92Mod 0.9 W 60 V/1.5 A 0.3 Ω 2SK974 L DPAK 20 W 60 V/3 A 0.15 Ω Passive belt etc. 2SK2334 L DPAK 30 W 60 V/20 A 0.04 Ω 2SJ182 L DPAK 20 W –60 V/–3 A 0.28 Ω 2SJ389 L DPAK 30 W –60 V/–10 A 0.1 Ω 2SK1095 TO-220FM 30 W 60 V/25 A 0.033 Ω 2SK1910 TO-220AB 50 W 60 V/25 A 0.03 Ω 2SJ220 LDPAK 75 W –60 V/–20 A 0.065 Ω 4AM16 SP-10 36 W 60 V/–60 A 0.13/0.15 Ω 8 A/–8 A 23

LINEUP BY APPLICATION 1.5 Lamp Inverter Application Inverter • Lineup Absolute Maximum Ratings Electrical Characteristics 10 V RDS(on) (Ω) VDSS VGSS ID Pch VGS (off) Package Part Number (V) (V) (A) (W) Typ Max (V) TO-220CFM 2SK2114 450 ±30 5 35 1.0 1.4 2 to 3 2SK2115 500 ±30 5 35 1.2 1.5 2 to 3 2SK2116 450 ±30 7 35 0.6 0.8 2 to 3 2SK2117 500 ±30 7 35 0.7 0.9 2 to 3 2SK2118 600 ±30 5 35 1.1 1.5 2 to 3 TO-220FM 2SK1668 250 ±30 7 30 0.4 0.55 2 to 3 2SK1762 250 ±30 12 35 0.23 0.35 2 to 3 2SK1626/27 450/500 ±30 5 35 1.0/1.2 1.4/1.5 2 to 3 2SK1566/67 450/500 ±30 7 35 0.6/0.7 0.8/0.9 2 to 3 2SK1404 600 ±30 5 60 1.1 1.5 2 to 3 LDPAK 2SK1313/14 450/500 ±30 5 50 1.0/1.2 1.4/1.5 2 to 3 2SK1540/41 450/500 ±30 7 60 0.6/0.7 0.8/0.9 2 to 3 2SK1315/16 450/500 ±30 8 60 0.55/0.6 0.7/0.8 2 to 3 TO-3P 2SK2075 250 ±30 20 100 0.105 0.13 2 to 3 2SK1671 250 ±30 30 125 0.075 0.095 2 to 3 2SK1161/62 450/500 ±30 10 100 0.6/0.7 0.8/0.9 2 to 3 2SK1163/64 450/500 ±30 11 100 0.55/0.6 0.7/0.8 2 to 3 2SK1165/66 450/500 ±30 12 100 0.4/0.45 0.55/0.6 2 to 3 TO-3PFM 2SK1831/32 450/500 ±30 10 50 0.6/0.7 0.8/0.9 2 to 3 2SK1328/29 450/500 ±30 12 60 0.4/0.5 0.55/0.6 2 to 3 2SK1405 600 ±30 15 60 0.35 0.5 2 to 3 24

LINEUP BY APPLICATION 1.6 CRT Display Use Switching power supply V in Video signal switch Video output Vertical Vertical Horizontal VDT output AFC output Anode voltage High-voltage Horizontal stabilization AFC oscillation Horizontal drive Flyback interval switching S compensation switching 25

LINEUP BY APPLICATION • Lineup Maximum Ratings RDS(on) (Ω) VDSS IC Pch* Main Use Part Number Package (V) (mA) (W) Typ Max S compensation switching 2SK2212 TO-220FM 200 10 30 0.24 0.30 2SK2590 TO-220AB 200 10 50 0.33 0.45 Flyback interval switching 2SK1155 TO-220AB 450 5 50 1.0 1.4 2SK1314 LDPAK 500 5 50 1.2 1.5 2SK1338 TO-220AB 900 3 50 5.0 7.0 Switching For 100 V 2SK1567 TO-220FM 500 7 60 0.7 0.9 power AC supply 2SK1831 TO-3PFM 450 10 50 0.6 0.8 2SK1328 450 12 60 0.4 0.55 2SK1329 500 12 60 0.4 0.6 For both 2SK1404 TO-220FM 600 5 35 1.1 1.5 100 V and 2SK2328 TO-220AB 650 7 75 1.0 1.4 200 V AC 2SK1341 TO-3P 900 6 100 2.0 3.0 2SK1342 900 8 100 1.2 1.6 2SK1775 TO-3PFM 900 8 60 1.2 1.6 Horizontal deflection 2SJ410 TO-220FM –200 –6 30 0.7 0.85 power supply Horizontal High voltage 2SK1773 TO-3P 1000 5 100 1.5 2.0 deflection Very high 2SK1317 TO-3P 1500 2.5 100 9.0 12 output voltage 2SK2225 TO-3PFM 1500 2.0 50 9.0 12 2SK1835 TO-3P 1500 4 125 4.6 7.0 2SK2393 TO-3PL 1500 8 200 1.9 2.8 Horizontal deflection drive 2SK1862 TO-220FM 450 3 20 2.0 2.8 2SK1910 TO-220AB 60 25 50 0.03 0.04 Video output 2SK619 TO-126MOD 70 0.3 10 — 50 2SK1197 TO-126MOD 100 0.5 20 — 25 * Tc = 25°C 26

Section 2 Series Lineup 2.1 D Series Lineup (vertical structure) ID (A) VDS (V) 0.3 [0.5] 1 [1.5] 2 3 [4] 5 6 7 8 10 [11] 12 13 20 5 2SJ361 (0.4) HAT1001F(0.05) 2SJ318 (0.085) 2SK2084 (0.04) 2SJ332 (0.05) HAT1004F (0.1) HAT1007F(0.05) 2SJ387 (0.05) HAT2005(0.05) 30 5 2SK2247(0.25) HAT1002F (0.06) HAT2001F (0.035) 2SJ246 (0.13) 2SK2329 (0.03) HAT1008F(0.085) HAT1005F (0.07) HAT2002F (0.03) 2SJ333 (0.1) HAT2003F(0.13) 2SK2418 (0.04) 2SJ234 (0.3) 2SJ388 (0.06) 60 × 2SK1336 (1.3) + (2SK975) (0.3) 2SK973 (0.25) 2SK974 (0.15) 4AK16 (0.12) 4AK15 (0.055) 2SK970 (0.12) 2SJ214 (0.15) 5 2SK1697 (1.3) 5 2SJ278 (0.7) 4AK18 (0.25) 2SJ182 (0.25) 4AM11 4AM12 2SK1093 (0.12) 2SK2390 (0.07) 5 2SJ450 (0.85) 5 2SK1764 (0.3) 2SK1950 (0.2) 2SJ245 (0.2) 2SJ172 (0.15) HAT1006F (0.11) 2SJ235 (0.28) 2SJ279 (0.17) 2SJ175 (0.15) 5 2SK2315 (0.4) 2SK1949 (0.12) 2SJ389 (0.1) 2SJ390 (0.09) 100 × 2SK1337 (3.5) + 2SK2085 (0.6) 2SK1299 (0.25) 2SJ247 (0.3)* 2SK1300 (0.2) 2SK1778 (0.2) 5 2SK1698 (3.5) 2SJ248 (0.3)* 2SK1305 (0.2) 120 2SK1254 (0.3) 2SJ350 (0.5) 2SK2202 (0.3) 150 2SK740 (0.12) 2SK1620 (0.12) 200 5 [2SJ186] (8.0) 5 2SK1334 (2.5) 2SK1335 (0.5) 2SK1957 (0.33) 2SK2212 (0.24) 2SK2590 (0.33) 250 2SK1838 (5.5)* 2SK741 (0.4) 2SK401 (0.3) 2SK1761 (0.23) 2SK1621 (0.4) 2SK1762 (0.23) 2SK1667 (0.4) 2SK2426 (0.23) 2SK1668 (0.4) 2SK2425 (0.4) 300 2SJ130 (6.0) 2SK2345 (0.6) 2SK1400 (0.5) 350 2SK1400A (0.6) 400 2SJ117 (5.0) 450 [2SK1151] (3.5) 2SK1153 (2.0) 2SK1155 (1.0) 2SK1157 (0.6) 2SK1159 (0.55) 2SK1161 (0.6) 2SK1165 (0.40) 2SK1862 (2.0) 2SK1313 (1.0) 2SK1540 (0.6) 2SK1315 (0.55) [2SK1163] (0.55) 2SK1328 (0.4) 2SK2431 (2.0) 2SK1626 (1.0) 2SK1566 (0.6) 2SK2424 (0.4) 2SK1515 (0.6) 2SK2114 (1.0) 2SK2116 (0.7) 2SK2423 (0.55) 500 [2SK1152] (4.0) 2SK1154 (2.2) 2SK1156 (1.2) 2SK1158 (0.7) 2SK1160 (0.6) 2SK1162 (0.7) 2SK1166 (0.45) 2SK1863 (2.2) 2SK1314 (1.2) 2SK1541 (0.7) 2SK1316 (0.6) [2SK1164] (0.6) 2SK1329 (0.45) 2SK1627 (1.2) 2SK1567 (0.7) 2SK2591 (0.45) 2SK1516 (0.6) 2SK2568 (0.45) 2SK2115 (1.2) 2SK2117 (0.7) 2SK2408 (0.7) 600 2SJ181 (15) [2SK1880] (6.5) [2SK1402] (1.8) 2SK1404 (1.1) 2SK1625 (0.9) 2SK1403 (0.9) 2SK1968 (0.68) 2SK1572 (3.8) 2SK1809 (1.1) [2SK1637] (1.8) 2SK2118 (1.1) 2SK1618 (3.8) [2SK1624] (1.8) 2SK2059 (3.8) 2SK2144 (3.8) [2SK2097] (1.8) 650 2SK1402A (2.0) 2SK2328 (1.0) 2SK1403A (1.0) 2SK2422 (2.0) 900 [2SK1338] (5.0) 2SK1339 (5.0) 2SK1340 (3.0) 2SK1341 (2.0) 2SK1342 (1.2) 2SK1933 (0.9) [2SK1647] (5.0) [2SK1807] (3.0) 2SK1859 (2.0) 2SK1775 (1.2) [2SK1808] (3.0) 1000 2SK1773 (1.5) 2SK1934 (1.0) 1500 2SK1317 (9) [2SK1835] (4.6) Notes: 1. ( ) : RDS (on) typ (Ω) : Type with built-in high-speed diode : New device : DII Series : DIII Series : DIV Series 2. : DPAK : TO-220FM : TO-3P + : TO-92M : Module × : TO-92 : LDPAK : SOP-8 : HDPAK : TO-126 : TO-3PL : TO-220AB : TO-3P·FM 5 : UPAK : TO-220CFM 2

SERIES LINEUP 2.1 D Series Lineup (vertical structure) (cont) ID (A) VDS (V) 15 [20] 25 30 [35] 40 [45] 50 [upper 60A] 20 30 2SK2205 (0.011) 2SK2204 (0.011) 2SK2206 (0.011) 60 2SK971 (0.055) 2SJ293 (0.075) 2SK972 (0.03) 2SK1951 (0.03) 2SK1296 (0.024) 2SJ295 (0.033) 2SK1297 (0.015) [2SJ217] (0.033) 2SK2121 (0.007) 2SK1094 (0.055) 2SJ296 (0.075) 2SK1095 (0.03) 2SK1918 (0.03) [2SJ215] (0.045) 2SJ280 (0.033) 2SK1298 (0.015) [2SJ218] (0.033) 2SK2203 (0.007) 2SJ173 (0.09) [2SJ291] (0.055) 2SK1622 (0.03) 2SK2119 (0.03) [2SJ216] (0.045) 2SJ323 (0.033) 2SK1911 (0.018) 2SJ408 (0.015) 2SJ176 (0.09) [2SJ294] (0.055) 2SK1910 (0.03) 2SJ292 (0.033) 2SK1952 (0.018) [2SK2586] (0.007) [2SJ174] (0.065) [2SJ297] (0.055) 2SK1919 (0.018) [2SK2554] (0.0045) [2SJ177] (0.065) 2SK2175 (0.1) 2SK2096 (0.018) 2SJ219 (0.09) 2SK2334 (0.04) 2SK2120 (0.018) [2SJ220] (0.065) 2SJ321 (0.075) 2SK1648 (0.055) [2SJ322] (0.05) 2SJ290 (0.075) [2S2346] (0.036) 100 2SK1301 (0.1) [2SK1623] (0.065) 2SK1303 (0.05) 2SK1304 (0.025) 2SK1306 (0.1) [2SJ221] [2SK1302] (0.065) 2SJ222 (0.12) [2SK1307] (0.065) 2SJ409 (0.12) 120 150 200 250 2SK1636 (0.22) 2SK2007 (0.12) 2SK2007 (0.12) 2SK1947 (0.047) 2SK2008 (0.12) 2SK2008 (0.12) 2SK1948 (0.047) 2SK1671 (0.07) 300 2SK1401 (0.25) 350 2SK1401A (0.3) 400 450 2SK1167 (0.25) PM45302F (0.13) PM45502C (0.08) [2SK1169] (0.20) 2SK1519 (0.11) 2SK1521 (0.08) 2SK1517 (0.20) 2SK1628 (0.2) PM4550J (0.15) 2SK1526 (0.11) 2SK1836 (0.08) 500 [2SK2174] (0.22) PM50302F (0.15) PM50502C (0.09) 2SK2330 (0.3) 2SK1629 (0.22) 2SK1520 (0.085) 2SK1168 (0.30) 2SK1520 (0.12) PM5050J (0.15) [2SK1170] (0.22) 2SK1518 (0.22) 2SK1527 (0.12) 2SK1837 (0.09) [2SK1971] (0.19) 600 2SK1405 (0.35) 2SK1573 (0.35) 650 900 1000 1500 Notes: 1. ( ) : RDS (on) typ (Ω) : Type with built-in high-speed diode : DII Series : DIII Series : DIV Series : DV Series 2. : DPAK : TO-220FM : TO-3P + : TO-92M : Module × : TO-92 : LDPAK : SOP-8 : HDPAK : TO-126 : TO-3PL : TO-220AB : TO-3P·FM 5 : UPAK : TO-220CFM 3

SERIES LINEUP 2.2 S Series Lineup (lateral structure) V DS (V) 0.3 0.5 2 4 5 7 8 12 16 120 2SK1056 (1.0) 2SJ160 (1.0) 140 2SK213 (8) 2SK1057 (1.0) 2SJ76 (10) 2SJ161 (1.0) 160 2SK214 (8) 2SK135 (1.0) 2SJ77 (10) 2SJ150 (1.0) 2SK1058 (1.0) 2SJ162 (1.0) 180 2SK215 (8) 2SK408 (7) 2SK318 (1.9) 2SJ351 (1.0) 2SJ78 (10) 2SJ409 (7) 2SK2220 (1.0) 200 2SK216 (8) 2SJ352 (1.0) 2SJ79 (10) 2SK2221 (1.0) Notes: 1. ( ) : RDS (on) typ (Ω ) 2. Package: : TO-220AB : TO-126 : TO-3P 4

SERIES LINEUP Table 2-1 Typical D Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number RDS(on) (Ω) VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-3P 2SK1317 — 1500 ±20 2.5 100 9.0 12.0 0.75 87 170 990 2SK1835 — 4 125 4.6 7.0 1.4 105 310 1700 TO-3PFM 2SK2225 — 1500 2 50 9.0 12.0 0.75 67 200 990 HDPAK 2SK2278 — 1500 25 100 9.0 12.0 0.75 87 170 990 TO-3PL 2SK2393 — 1500 8 200 1.9 2.8 3.0 255 385 4370 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS ≥ ID × RDS(on), ID ≈ 1/2 ID max (DC) Table 2-2 Typical S Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number RDS(on) (Ω) VDSS VGSS ID Pch *2 |yfs|*3 ton toff Ciss fC Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) (MHz) TO-220AB 2SK213 2SJ76 140*1 ±15 0.5 30 8/10 — 0.15/0.1 20 30 90/120 40/30 2SK214 2SJ77 160*1 2SK215 2SJ78 180*1 2SK216 2SJ79 200*1 ±15 0.5 30 8/10 — 0.15/0.1 20 30 90/120 40/30 TO-3P 2SK1056 2SJ160 120*1 ±15 7 100 1.0 1.7 1.0 180/230 60/110 600/900 3/2 2SK1057 2SJ161 140*1 2SK1058 2SJ162 160*1 2SK2220 2SJ351 180 ±20 8 100 1.0 1.7 1.0 250/320 90/120 800/1200 2/1 2SK2221 2SJ352 200 Notes: 1. VDSX 2. Allowable value at TC = 25°C 3. Test conditions: VDS > ID × RDS(on), ID ≈ ID max (DC) 5

SERIES LINEUP 2.3 Power MOS FET DII Series Table 2-3 Typical DII Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number VDSS VGSS ID Pch*1 RDS(on) (Ω) |yfs|*2 ton toff Ciss Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) UPAK 2SK1334 2SJ186 200 ±20 1/0.5 1 2.5/8.0 3.8/12.0 0.6/0.3 13/12 17/32 80/75 DPAK — 2SJ130 300 ±20 –1 20 6.0 8.5 0.4 35 60 235 2SK1335 2SJ319 200 ±20 3 20 0.5/1.7 0.8/2.3 2.3/1 37/40 50/70 380/330 — 2SJ181 –600 ±15 –0.5 20 15 25 0.45 27 70 220 LDPAK 2SK1620 — 150 ±20 10 50 0.12 0.15 7.0 70 110 1200 2SK1621 — 250 7 0.4 0.55 4.5 50 120 820 TO-220AB 2SK740 — 150 ±20 10 50 0.12 0.15 7.0 70 110 1200 2SK2590 — 200 10 50 0.33 0.45 4.5 65 85 700 2SK741 — 250 7 0.4 0.55 4.5 50 120 820 TO-220FM 2SJ410 — –200 ±20 –6 30 0.7 0.85 3.5 57 130 920 2SK1957 — 200 7 30 0.33 0.45 4.5 65 85 700 2SK2212 — 200 10 30 0.24 0.3 6 98 145 1000 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID ≈ 1/2 ID max (DC) 6

SERIES LINEUP 2.4 Power MOS FET DIII Series 1. DIII-L Series Table 2-5 Typical DIII-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) 4 V RDS(on)*2 (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs| ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) UPAK 2SJ244 –12 ±7 –2 1 0.5 0.7 — — 1.8 365 1450 130 2SK1579 12 2 1 0.25 0.35 — — 2.5 500 1500 110 2SK1772 30 ±20 1 1 0.6 0.85 0.4 0.6 1.0 25 70 85 2SK1697 60 0.5 1 1.8 2.5 1.3 1.7 0.38 12 32 30 2SK1698 100 0.3 1 4.5 6.5 3.5 4.5 0.35 6 32 35 2SK1764 60 2 1 0.4 0.6 0.3 0.45 1.7 18 80 140 TO-92 2SK1336 60 ±20 0.3 0.4 1.8 2.5 1.3 1.7 0.35 6 34 33 2SK1337 100 0.3 0.4 4.0 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 DPAK 2SJ234 –30 ±20 –2.5 10 0.5 0.7 0.3 0.4 1.8 32 157 245 2SJ246 –30 –7 20 0.21 0.31 0.12 0.17 5.0 65 270 660 2SJ182 –60 –3 20 0.35 0.50 0.28 0.4 2.7 35 245 425 2SJ245 –60 –5 20 0.28 0.38 0.2 0.25 3.7 57 260 610 2SK973 60 2 10 0.4 0.5 0.25 0.35 2.0 19 120 240 2SK974 60 3 20 0.2 0.25 0.15 0.18 4.0 30 255 400 2SK1299 100 3 20 0.3 0.45 0.25 0.35 4.0 40 220 400 2SK1254 120 3 20 0.35 0.55 0.30 0.40 4.0 25 195 420 LDPAK 2SJ214 –60 ±20 –10 40 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ219 –15 50 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ220 –20 75 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SJ409 –100 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1860 2SK1648 60 15 40 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK1622 25 50 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1623 100 20 50 0.085 0.12 0.065 0.085 16.0 112 450 1300 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: RDS(on): VGS = 4 V, 10 V, ID ≈ 1/2 ID max |yfs|: VDS = 10 V, ID ≈ 1/2 ID max 7

SERIES LINEUP Table 2-5 Typical DIII-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs| ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) TO-220AB 2SJ172 –60 ±20 –10 40 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ173 –15 50 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ174 –20 75 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SK970 60 10 30 0.17 0.22 0.12 0.15 6.0 60 230 400 2SK971 15 40 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK972 25 50 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1296 30 75 0.03 0.04 0.024 0.028 27.0 145 615 2250 2SK1300 100 10 40 0.25 0.35 0.2 0.25 7.0 65 240 525 2SK1301 15 50 0.13 0.18 0.10 0.13 11.0 80 280 860 2SK1302 20 50 0.085 0.12 0.065 0.085 16.0 112 450 1300 2SJ247 –100 –8 40 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ221 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1800 TO-220FM 2SJ175 –60 ±20 –10 25 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ176 –15 30 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ177 –20 35 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SK1093 60 10 20 0.17 0.22 0.12 0.15 6.0 60 230 400 2SK1094 15 25 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK1095 25 30 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1305 100 10 25 0.25 0.35 0.2 0.25 7.0 65 240 525 2SK1306 15 30 0.13 0.18 0.10 0.13 11.0 80 280 860 2SK1307 20 35 0.085 0.12 0.065 0.085 16.0 112 450 1300 2SK2202 120 7 20 0.35 0.55 0.3 0.4 5.0 59 205 420 2SJ248 –100 –8 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 –20 35 0.16 0.22 0.12 0.16 12.0 130 490 1800 2SJ350 –120 –6 20 0.7 0.9 0.5 0.7 5.0 56 250 900 TO-220CFM 2SJ443 –60 ±20 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1800 TO-3P 2SK1297 60 ±20 40 100 0.02 0.025 0.015 0.018 35.0 200 1050 3600 2SJ215 –60 –35 125 0.07 0.09 0.045 0.06 18.0 195 780 2400 2SJ217 –45 150 0.045 0.06 0.033 0.042 25.0 265 1120 3800 2SK1303 100 30 100 0.06 0.09 0.05 0.06 22.0 135 585 1750 2SK1304 40 100 0.03 0.04 0.025 0.03 35.0 195 1030 3500 TO-3PFM 2SK1298 60 ±20 40 50 0.02 0.025 0.015 0.018 35.0 200 1050 3600 2SJ216 –60 –35 50 0.07 0.09 0.045 0.06 18.0 195 780 2400 2SJ218 –45 60 0.045 0.06 0.033 0.042 25.0 265 1120 3800 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: RDS(on): VGS = 4 V, 10 V, ID ≈ 1/2 ID max |yfs|: VDS = 10 V, ID ≈ 1/2 ID max 8

SERIES LINEUP 2. DIII-H Series features Table 2-6 Typical DIII-H Series Characteristics Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) DPAK 2SK1838 250 ±30 1 10 5.5 8.0 0.5 11 15 60 2SK1151 450 1.5 20 3.5 5.5 1.0 20 30 160 2SK1152 500 4.0 6.0 2SK1880 600 6.5 8.0 1.4 35 65 250 2SK2059 600 3 20 3.8 5.0 1.2 33 95 295 LDPAK 2SK1636 250 ±30 15 75 0.22 0.27 10 109 170 1250 2SK1869 350 7 50 0.6 0.8 5.0 60 100 635 2SK1313 450 5 50 1.0 1.4 4.0 35 80 640 2SK1314 500 1.2 1.5 2SK1540 450 7 60 0.6 0.8 6.5 70 135 1050 2SK1541 500 0.7 0.9 2SK1315 450 8 60 0.55 0.7 7.5 72 145 1150 2SK1316 500 0.6 0.8 2SK1618 600 3 30 3.8 5.0 2.0 33 95 295 2SK1624 4 50 1.8 2.4 3.5 38 95 600 2SK1625 7 75 0.9 1.3 6.5 65 150 1180 2SK1647 900 2 50 5.0 7.0 1.5 45 110 425 2SK1528 4 60 3.0 4.0 2.7 75 180 740 TO-220AB 2SK1667 250 ±30 7 50 0.4 0.55 5.0 68 102 690 2SK1761 12 75 0.23 0.35 8.0 85 144 1100 2SK1400 300 7 50 0.5 0.7 5.0 60 100 635 2SK1400A 350 0.6 0.8 5.0 2SK1153 450 3 30 2.0 2.8 2.5 27 50 330 2SK1154 500 2.2 3.0 2SK1155 450 5 50 1.0 1.4 4.0 35 80 640 2SK1156 500 1.2 1.5 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 9

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-220AB 2SK1157 450 ±30 7 60 0.6 0.8 6.5 70 135 1050 2SK1158 500 0.7 0.9 2SK2408 500 0.7 0.9 6.0 70 148 1100 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500 0.6 0.8 2SK1402 600 4 50 1.8 2.4 3.5 38 95 600 2SK1402A 650 2.0 2.6 2SK2328 650 7 75 1.0 1.4 6.5 65 150 1180 2SK1809 600 5 60 1.1 1.5 5.0 57 160 1000 2SK1338 900 2 50 5.0 7.0 1.5 45 110 425 2SK1807 4 60 3.0 4.0 2.7 75 180 740 TO-220FM 2SK1668 250 ±30 7 30 0.4 0.55 5.0 68 102 690 2SK1762 12 35 0.23 0.35 8.0 85 144 1100 2SK2345 350 6 35 0.6 0.8 4.5 50 95 635 2SK1862 450 3 20 2.0 2.8 2.5 27 50 330 2SK1863 500 2.2 3.0 2SK1626 450 5 35 1.0 1.4 4.0 35 80 640 2SK1627 500 1.2 1.5 2SK1566 450 7 0.6 0.8 6.5 70 135 1050 2SK1567 500 0.7 0.9 2SK1572 600 3 25 3.8 5.0 2.0 33 95 295 2SK1637 4 35 1.8 2.4 3.5 38 95 600 2SK2422 650 2.0 2.6 2SK1404 600 5 1.1 1.5 5.0 57 160 1000 2SK1808 900 4 3.0 4.0 2.7 75 180 740 TO-220 2SK2425 250 ±30 7 30 0.4 0.55 5.0 68 102 690 CFM 2SK2426 250 12 35 0.23 0.35 8.0 85 144 1100 2SK2431 450 3 25 2.0 2.8 2.5 27 50 330 2SK2114 450 5 35 1.0 1.4 4.0 35 80 640 2SK2115 500 1.2 1.5 2SK2116 450 7 0.6 0.8 6.5 70 135 1050 2SK2117 500 0.7 0.9 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 10

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-220 2SK2423 450 ±30 7 35 0.55 0.7 7.5 72 145 1150 CFM 2SK2424 450 8 35 0.4 0.55 9.0 75 180 1450 2SK2591 500 8 35 0.45 0.60 9.0 75 180 1450 2SK2144 600 3 25 3.8 5.0 2.0 33 95 295 2SK2097 4 35 1.8 2.4 3.5 38 95 600 2SK2118 5 35 1.1 1.5 5.0 57 160 1000 TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 14 155 290 2340 2SK1669 30 125 0.075 0.095 20 215 420 3100 2SK1671 0.075 0.095 20 215 380 3000 2SK2075 20 100 0.105 0.13 14 155 290 2340 2SK1401 300 8 100 0.25 0.35 9.5 95 155 1250 2SK1401A 350 0.30 0.40 2SK1161 450 10 0.6 0.8 7.0 75 135 1050 2SK1162 500 0.7 0.9 2SK1163 450 11 0.55 0.7 8.0 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 500 0.45 0.6 2SK1167 450 15 0.25 0.36 13 140 220 2050 2SK1168 500 0.3 0.4 2SK1169 450 20 120 0.2 0.25 16 147 290 2800 2SK1170 500 0.22 0.27 2SK1515 450 10 100 0.6 0.8 7.0 80 150 1100 2SK1516 500 0.7 0.9 2SK2568 500 12 100 0.45 0.60 (10) (100) (215) (1550) 2SK1517 450 20 120 0.20 0.25 16 165 345 3050 2SK1518 500 0.22 0.27 2SK1403 600 8 100 0.9 1.3 6.5 65 150 1180 2SK1403A 650 1.0 1.4 2SK1968 600 12 0.68 0.88 10 95 210 1800 2SK1573 15 120 0.35 0.5 14 140 340 3150 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 11

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-3P 2SK1339 900 ±30 3 80 5.0 7.0 1.9 50 105 425 2SK1340 5 100 3.0 4.0 3.2 85 180 740 2SK1341 6 2.0 3.0 3.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170 455 2620 2SK1773 1000 5 100 1.5 2.0 5.0 135 345 1700 2SK1934 8 150 1.2 1.6 6 170 505 2690 TO-3PFM 2SK2008 250 ±30 20 60 0.12 0.15 14 155 290 2340 2SK1670 30 0.075 0.095 20 215 420 3100 2SK1831 450 10 50 0.6 0.8 7.0 75 135 1050 2SK1832 500 0.7 0.9 2SK1328 450 12 60 0.40 0.55 10 90 180 1450 2SK1329 500 0.45 0.60 2SK1405 600 15 0.35 0.50 14 155 340 3150 2SK1859 900 6 2.0 3.0 3.7 100 225 980 2SK1775 8 1.2 1.6 5.5 160 315 1730 HDPAK 2SK2330 500 ±30 15 100 0.3 0.4 13 140 220 2050 2SK2174 500 20 120 0.22 0.27 16 147 290 2800 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 30 345 620 5810 2SK1948 330 5830 2SK1519 450 30 0.11 0.15 25 235 615 5800 2SK1520 500 0.12 0.16 2SK1521 450 50 250 0.08 0.10 35 335 850 8700 2SK1522 500 0.085 0.11 2SK1628 450 30 200 0.2 0.25 20 172 300 2800 2SK1629 500 0.22 0.27 2SK1971 500 35 0.19 0.23 24 220 450 4320 2SK1526 450 40 250 0.11 0.15 30 235 580 5800 2SK1527 500 0.12 0.16 2SK1836 450 50 0.08 0.1 35 330 770 8150 2SK1837 500 0.085 0.11 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 12

SERIES LINEUP 2.5 Power MOS FET DIV Series Features Main Applications • Low “on” resistance (30% less than DIII Series • DC/DC converter for same die area), P ch/N ch complementary Notebook PCs, wordprocessors, games, etc. • Low driving voltage • Compact motor drive 4 V: for direct driving of microcomputers and TTL Copiers, printers, FAX, etc. 2.5 V: for battery-driven (3 V) systems • Automotive • Strongly resistant to load surges (avalanche) Relays, solenoid drives, power steering, • Built-in diode highly resistant to diode breakdown power mirror, ABS inverter, etc. • Other uses Power tools, radio-controlled model motors, diode substitute, etc. Table 2-7 Typical DIV-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) *2 *2 Part VDSS VGSS ID Pch *1 4 V RDS(on) (Ω) 10 V RDS(on) (Ω) |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note MPAK 2SJ399 –30 ±20 –0.2 0.15 2.7 5.0 2.0 3.0 — 2700 16330 1.1 2SJ451*3 –20 –0.2 0.15 2.3 3.5 — — 0.23 850 5800 2.4 2SJ452*3 –50 –0.2 0.15 5.0 7.0 — — 0.19 1750 14000 1.1 2SK2373 30 0.2 0.15 1.4 2.5 1.0 1.4 — 175 1060 17.8 2SK2569*3 50 0.2 0.15 1.9 2.6 — — ( ) 130 1500 ( ) (2SK2570)*3 20 ±10 0.2 0.15 1.0 1.3 — — ( ) ( ) ( ) ( ) UPAK 2SJ317 –12 ±7 –2 1 0.28 0.35 — — 2 590 2350 60 2SJ361*3 –20 ±20 –2 1 0.85 1.5 0.28 0.4 0.3 2000 14330 3.2 2SJ363 –30 –2 1 0.6 0.75 0.35 0.45 2.0 9650 40800 2.1 2SJ278 –60 –1 1 0.8 1.2 0.7 0.83 1.0 15 60 180 2SJ450*3 –60 –1 1 0.85 1.2 — — 1.0 15 85 150 2SK2247 30 2 1 0.30 0.45 0.22 0.35 1.9 22 70 177 2SK2315*3 60 2 1 0.35 0.45 — — 1.8 21 85 173 TO-92M 2SJ386 –30 ±20 –3 0.9 0.55 0.8 0.3 0.4 1.7 36 105 177 DPAK 2SJ318 –20 ±20 –5 20 0.14 0.19 0.09 0.13 5.5 70 150 580 2SJ332 –10 20 0.09 0.14 0.05 0.08 9 83 190 730 2SJ333 –30 –7 20 0.16 0.2 0.12 0.15 6 60 220 750 2SJ387*3 –20 ±10 –10 20 0.05 0.07 — — 12 345 775 1170 2SJ388*3 –30 ±20 –10 20 0.12 0.2 0.06 0.08 8 75 490 970 2SK2084 20 7 20 0.058 0.075 0.04 0.053 9 75 180 800 2SJ279 –60 –5 20 0.20 0.27 0.17 0.2 5.0 50 200 690 2SJ389 –60 –10 30 0.14 0.2 0.1 0.135 8 100 365 910 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 13

SERIES LINEUP Table 2-7 Typical DIV-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note DPAK 2SK1949 60 ±20 5 20 0.15 0.2 0.12 0.15 5 70 110 390 2SK1950*3 3 10 0.3 0.45 0.2 0.25 10 60 160 350 2SK2329*3 30 ±10 10 20 0.03 0.04 — — 18 165 350 1250 2SK2334 60 ±20 20 30 0.055 0.07 0.04 0.055 15 104 305 980 2SK2418*3 20 ±10 7 20 0.04 0.05 — — 12 105 270 810 FP-8D HAT1001F*3 –20 ±10 –3.5 1 0.05 0.07 — — 8.0 265 790 1170 (EIAJ HAT1002F –30 ±20 –3.5 1 0.1 0.13 0.06 0.07 6.0 335 140 960 SOP-8) HAT1004F*3 –20 ±10 –2.5 1.5 0.1 0.12 — — 5.5 153 270 750 Pch×2 HAT1005F*3 –30 ±20 –3.5 1 0.095 0.13 0.07 0.09 6.0 135 220 840 HAT1006F –60 –2.5 1 0.14 0.2 0.1 0.14 5.5 225 190 910 HAT1007F –20 –3.5 1 0.1 0.15 0.06 0.08 5.0 193 140 730 HAT1008F –30 –2.5 1 0.12 0.2 0.075 0.12 4.5 179 110 670 HAT1009F –30 ±10 –2.5 1.5 0.12 0.16 — — 5.0 116 220 720 Pch×2 HAT2001F*3 30 5 1 0.035 0.045 — — 12.0 120 340 1250 HAT2002F 30 ±20 5 1 0.05 0.06 0.03 0.04 8.0 220 165 860 HAT2003F*3 30 ±10 2.5 1.5 0.1 0.15 — — 5.0 95 140 380 Nch×2 HAT2004F*3 15 3.5 1.5 0.055 0.07 — — 7.5 112 225 620 Nch×2 HAT2005F*3 20 4 1 0.05 0.065 — — 10.0 115 270 810 HAT2006F 60 ±20 4 1 0.065 0.075 0.045 0.06 6.5 185 160 860 HAT2007F 30 4 1 0.065 0.11 0.04 0.07 5.0 125 100 680 HAT2008F*3 20 ±10 3.5 1.5 0.055 0.075 — — 7.5 103 210 620 Nch×2 HAT2009F*3 30 3.5 1.5 0.065 0.08 — — 7.0 97 200 610 Nch×2 HAT2010F 30 ±20 3.5 1.5 0.09 0.13 0.06 0.075 4.5 110 85 470 Nch×2 HAT3001F*3 30 ±10 2.5 1.5 0.1 0.15 — — 4.0 95 140 380 Nch/ –30 –2.5 0.12 0.16 — — 5.0 116 220 720 Pch in TO-220AB 2SK2205 –30 ±20 45 75 0.016 0.022 0.011 0.015 38 260 795 3600 2SK2175 60 15 30 0.13 0.18 0.1 0.13 8 75 180 390 2SJ290 –60 –15 50 0.09 0.12 0.075 0.095 12 105 390 1450 2SJ291 –20 60 0.072 0.095 0.055 0.065 17 155 500 2200 2SJ292 –30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1911 40 75 0.023 0.028 0.018 0.022 35 180 850 3530 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 14

SERIES LINEUP Table 2-7 Typical DIV-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note TO-220FM 2SJ390 –60 ±20 –10 25 0.13 0.19 0.09 0.12 9 78 285 1060 2SJ293 –15 30 0.09 0.15 0.075 0.095 12 105 390 1450 2SJ294 –20 35 0.075 0.095 0.055 0.065 17 155 500 2200 2SJ295 –30 35 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1951 60 25 35 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1952 40 35 0.023 0.028 0.018 0.022 35 180 850 3530 TO-220 2SJ321 –60 ±20 –15 30 0.09 0.15 0.075 0.095 12 105 390 1450 CFM 2SJ322 –20 35 0.075 0.095 0.055 0.065 17 150 500 2200 2SJ323 –30 35 0.045 0.06 0.03 0.04 25 130 370 3300 2SK2206 30 45 35 0.016 0.022 0.011 0.015 38 260 795 3600 2SK2390 60 12 20 0.11 0.15 0.075 0.09 8 65 170 450 2SK2346 20 25 0.05 0.07 0.036 0.05 17 105 310 1130 2SK2119 25 30 0.043 0.06 0.03 0.04 21 130 370 1450 2SK2120 40 35 0.023 0.028 0.018 0.022 35 183 670 3530 LDPAK 2SK2204 30 ±20 45 75 0.016 0.022 0.011 0.015 38 260 795 3600 2SJ296 –60 –15 50 0.09 0.15 0.075 0.095 12 105 390 1470 2SJ384*3 –15 50 0.12 0.19 0.07 0.1 14 91 540 2170 2SJ297 –20 60 0.075 0.095 0.055 0.065 17 155 500 2200 2SJ280 –30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK2322*3 60 15 50 0.08 0.15 0.04 0.05 14 220 250 1600 2SK1918 25 50 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1919 40 75 0.023 0.028 0.018 0.022 35 180 850 3530 TO-3P 2SK2096 60 ±20 45 100 0.023 0.028 0.018 0.022 35 183 670 3530 2SK2121 50 100 0.009 0.013 0.007 0.01 65 360 1955 8330 HDPAK 2SJ408 –60 ±20 –50 100 0.02 0.028 0.015 0.02 50 395 1770 8200 TO-3PFM 2SK2203 60 ±20 50 60 0.009 0.013 0.007 0.01 65 360 1955 8330 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 15

SERIES LINEUP 2.6 Power MOS FET DV Series Features • Super Low “on” resistance; 50% Less RDS(on) than DIV Series for same die area. • Low driving Gate voltage 4 V and 2.5 V Gate Drive capability for direct driving of microcomputers and TTL, and 3 V Battery source. • Low Gate charge capability: 50% Less Qg than DIV Series for same RDS(on) characteristics. • Pch/Nch complementary • High avalanche destruction capability Table 2-8 Typical DV-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) 4 V RDS(on) (Ω)*2 10 V RDS(on)*2 Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note FP-8DA (HAT1020R) –30 ±20 –4.5 2 0.09 0.13 0.05 0.07 (8.0) (235) (95) (670) (JEDEC (HAT1023R)*3 –20 ±10 –6.5 2 0.023 0.04 — — (10.0) (320) (750) (1200) SOP-8) (HAT1024R) –30 ±20 –2.5 2 0.25 0.4 0.18 0.25 (4.0) (80) (35) (250) Pch×2 (HAT1025R)*3 –20 ±10 –4 2 0.09 0.11 — — (6.0) (110) (210) (530) Pch×2 (HAT2016R) 30 ±20 5 2 0.055 0.08 0.04 0.05 (6.5) (115) (75) (350) Nch×2 (HAT2020R) 30 ±20 7 2 0.04 0.05 0.026 0.03 (10.0) (180) (125) (570) (HAT2022R) 30 ±20 10 2 0.016 0.02 0.011 0.0135 (18.0) (255) (260) (1250) (HAT3004R) 30 ±20 3.5 2 0.11 0.15 0.08 0.1 (3.0) (70) (45) (180) Nch/ –30 –2.5 0.2 0.4 0.13 0.25 (3.0) (70) (45) (250) Pch in TO-220CFM 2SK2529 60 ±20 50 35 10 m 16 m 7m 10 m 55 265 830 3550 LDPAK 2SK2553 60 ±20 50 75 10 m 16 m 7m 10 m 55 265 830 3550 TO-3P 2SK2586 60 ±20 60 125 10 m 16 m 7m 10 m 60 295 850 3550 2SK2554 60 ±20 75 150 5.8 m 10 m 4.5 m 6m 80 480 2100 7700 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 16

SERIES LINEUP 2.7 Power MOS FET Array Series Table 2-9 Typical Characteristics of Power MOS FET Array Series Maximum Ratings Electrical Characteristics (typ) Equivalent Part VDSS VGSS ID Pch* 4 V RDS(on) (Ω) 10 V RDS(on) (Ω) |yfs| ton toff Single Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) Device SP-10 (A) 4AK17 60 ±20 10 28 0.04 0.065 0.033 0.045 17 110 470 2SK972 4AK15 8 0.075 0.095 0.055 0.07 12 80 300 2SK971 4AK16 5 0.17 0.25 0.12 0.18 6 60 230 2SK970 4AK18 2.5 0.4 0.53 0.25 0.38 2 19 120 2SK973 (B) 4AM13 60 ±20 3 28 0.35 0.5 0.25 0.35 2.5 24 120 2SK973 –60 –3 0.4 0.55 0.28 0.40 2.5 30 260 2SJ182 4AM11 60 ±20 5 28 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –5 0.20 0.27 0.15 0.2 5.0 43 265 2SJ172 4AM12 60 ±20 8 28 0.08 0.11 0.06 0.075 9.0 55 300 2SK971 –60 –8 0.135 0.18 0.09 0.12 7.5 100 400 2SJ173 (A) 4AK20 100 ±20 5 28 0.25 0.35 0.2 0.25 5.0 40 250 2SK1300 4AK21 100 ±20 8 28 0.09 0.125 0.07 0.09 10 72 440 2SK1302 4AK22 120 ±20 3 28 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12TA (E) 4AM14 60 ±20 8 32 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –8 0.20 0.27 0.15 0.20 5.0 43 265 2SJ172 (D) 6AM12 60 ±20 7 42 0.19 0.24 0.13 0.17 5.5 50 230 2SK970 –60 –7 0.20 0.27 0.15 0.20 6.0 58 265 2SJ172 6AM13 60 ±20 10 42 0.08 0.11 0.06 0.075 9.5 60 290 2SK971 –60 –10 0.12 0.18 0.09 0.12 8.0 115 410 2SJ173 6AM14 60 ±20 7 42 0.14 0.2 0.11 0.14 6.5 100 360 — –60 –7 0.12 0.16 0.095 0.13 8.0 85 420 — SP-12 (G) 4AJ11 –60 ±20 –8 28 0.12 0.17 0.09 0.13 7.7 135 380 2SJ173 (F) 4AK26 60 10 0.056 0.075 0.045 0.06 12 110 470 2SK972 (E) 4AM16 60 8 36 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –8 0.2 0.27 0.15 0.2 5.0 43 265 2SJ172 (D) 6AM11 60 ±20 5 36 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –5 0.20 0.27 0.15 0.20 5.0 43 265 2SJ172 SP-10 (A) 4AK25 60 ±20 1.5 24 0.47 0.60 0.35 0.45 1.5 15 80 2SK975 SP-12TA (F) 4AK23 100 ±20 5 32 0.25 0.40 0.20 0.30 5.5 37 245 2SK1300 (E) 4AM15 200 4 32 — — 0.33 0.50 2.5 50 105 2SK1957 –200 –4 — — 0.70 0.90 3.0 70 145 — Note: * Allowable value at TC = 25°C 17

SERIES LINEUP Maximum channel dissipation ambient Maximum channel dissipation case temperature curve temperature curve 6 30 Total allowable dissipation Pch (W) Total allowable dissipation Pch (W) (Each element assumed to (Each element assumed to 5 have identical loss) have identical loss) 4-element operation 4-element operation 4 20 3-element operation 3-element operation 2-element operation 2-element operation 3 1-element operation 1-element operation 2 10 1 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Ambient temperature Ta (°C) Case temperature TC (°C) 18

SERIES LINEUP Type Equivalent Circuit SP-10 N ch 4-element (A) 3 5 7 9 2 4 6 8 1 10 N/P complementary (B) 3 5 7 9 2 4 6 8 1 10 N ch P ch SP-12 (E) 2 4 9 10 • SP-12TA 1 5 8 12 3 6 7 11 N ch P ch (D) 5 12 4 6 11 P ch 3 7 10 2 8 9 N ch 1 (F) 2 4 9 10 1 5 8 12 3 6 7 11 N ch N ch (G) 2 4 9 10 1 5 8 12 3 6 7 11 P ch P ch 19

SERIES LINEUP 2.8 Power MOS FET Modules Table 2-10 Typical Characteristics of Power MOS FET Modules Maximum Ratings* Electrical Characteristics (typ) RDS(on) (Ω) VDSS VGSS ID Pch |yfs| ton toff trr Equivalent Package Part Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (ns) Circuit F PM45302F 450 ±20 30 200 0.13 0.2 25 580 900 200 A PM50302F 500 0.15 0.2 C PM45502C 450 ±20 50 300 0.08 0.12 40 850 1400 200 A PM50502C 500 0.09 0.12 J PM4550J 450 ±30 50 250 0.14 0.18 30 315 390 130 B PM5050J 500 0.14 0.18 PM4575J 450 ±30 75 300 0.1 0.12 45 410 685 130 B PM5075J 500 0.1 0.12 K PM50100K 500 ±30 100 400 0.08 0.10 55 890 1020 140 B PM50150K 500 150 500 0.06 0.08 80 1100 1590 140 PM45100K 450 100 400 0.08 0.10 55 890 1020 140 PM45150K 450 150 500 0.06 0.08 80 1100 1590 140 Notes: * Per transistor : Type with built-in high-speed diode Internal equivalent circuit A B 20

SERIES LINEUP 2.9 Line-up of Each Package Outline for Same Die 1. DI Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-3P TO-3PFM LDPAK HDPAK 1500 2.5 9 12 2SK1317 2SK2225 2SK2278 2. DII Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-3P TO-3PFM LDPAK HDPAK 150 10 0.12 0.15 2SK740 2SK1620 250 7 0.4 0.55 2SK741 2SK1621 3. DIII-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-92 TO-92M TO-220AB TO-220FM TO-3P TO-3PFM UPAK DPAK LDPAK 60 0.5 1.3 1.7 2SK1336 2SK1697 60 1.5 0.3 0.4 2SK975 2SK1764 60 10 0.12 0.15 2SK970 2SK1093 2SK974 60 15 0.055 0.065 2SK971 2SK1094 2SK1648 60 25 0.033 0.04 2SK972 2SK1095 2SK1622 60 40 0.015 0.018 2SK1297 2SK1298 100 0.3 3.5 4.5 2SK1337 2SK1698 100 10 0.2 0.25 2SK1300 2SK1305 100 15 0.1 0.13 2SK1301 2SK1306 100 20 0.065 0.085 2SK1302 2SK1307 2SK1623 –60 –10 0.13 0.18 2SJ172 2SJ175 2SJ214 –60 –15 0.09 0.11 2SJ173 2SJ176 2SJ219 –60 –20 0.065 0.085 2SJ174 2SJ177 2SJ220 –60 –35 0.045 0.06 2SJ215 2SJ216 –60 –45 0.033 0.042 2SJ217 2SJ218 –100 –8 0.25 0.3 2SJ247 2SJ248 –100 –20 0.12 0.16 2SJ221 2SJ222 2SJ409 21

SERIES LINEUP 4. DIII-H Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-220CFM TO-3P TO-3PFM TO-3PL DPAK LDPAK HDPAK 250 7 0.4 0.55 2SK1667 2SK1668 2SK2425 250 12 0.23 0.35 2SK1761 2SK1762 2SK2426 250 20 0.12 0.15 2SK2007 2SK2008 250 30 0.075 0.095 2SK1669 2SK1670 350 7 0.6 0.8 2SK1400A 2SK2345 2SK1869 350 15 0.3 0.4 2SK2582 2SK1401A 450 3 2 2.8 2SK1153 2SK1862 2SK2431 500 3 2.2 3 2SK1154 2SK1863 450 5 1 1.4 2SK1155 2SK1626 2SK2114 2SK1313 500 5 1.2 1.5 2SK1156 2SK1627 2SK2115 2SK1314 450 7 0.6 0.8 2SK1157 2SK1566 2SK2116 2SK1161 2SK1831 2SK1540 500 7 0.7 0.9 2SK1158 2SK1567 2SK2117 2SK1162 2SK1832 2SK1541 450 8 0.55 0.7 2SK1159 2SK2423 2SK1163 2SK1315 500 8 0.6 0.8 2SK1160 2SK1164 2SK1316 450 12 0.4 0.55 2SK2424 2SK1165 2SK1328 500 12 0.45 0.6 2SK2591 2SK1166 2SK1329 450 15 0.25 0.36 2SK1167 500 15 0.3 0.4 2SK1168 2SK2330 450 20 0.2 0.25 2SK1169 2SK1628 500 20 0.22 0.27 2SK1170 2SK1629 2SK2174 500 10 0.7 0.9 2SK2408 2SK1516 600 3 3.8 5 2SK1572 2SK2144 2SK2059 2SK1618 600 4 1.8 2.4 2SK1402 2SK1637 2SK2097 2SK1624 600 5 1.1 1.5 2SK1809 2SK1404 2SK2118 600 7 0.9 1.3 2SK1403 2SK1625 650 4 2 2.6 2SK1402A 2SK2422 650 7 1 1.4 2SK2328 2SK2416 2SK1403A 900 3 5 7 2SK1338 2SK1339 2SK1647 900 5 3 4 2SK1807 2SK1808 2SK1340 2SK1528 900 6 2 3 2SK1341 2SK1859 900 8 1.2 1.6 2SK1342 2SK1775 22

SERIES LINEUP 5. DIV-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID TO-126 TO-220 TO-220 TO-220 TO-3 (V) (A) Typ Max FM AB FM CFM TO-3P PFM (SOP-8) DPAK LDPAK HDPAK –20 –7 0.05 0.07 HAT1001F 2SJ387 –60 –15 0.075 0.095 2SJ290 2SJ293 2SJ321 2SJ296 –60 –20 0.05 0.065 2SJ291 2SJ294 2SJ322 2SJ297 –60 –30 0.033 0.043 2SJ292 2SJ295 2SJ323 2SJ280 30 10 0.03 0.04 HAT2001F 2SK2329 30 45 0.011 0.015 2SK2205 2SK2206 2SK2204 60 5 0.12 0.15 2SK2175 2SK1949 60 25 0.03 0.04 2SK1910 2SK1951 2SK2119 2SK1918 60 40 0.018 0.022 2SK1911 2SK1952 2SK2120 2SK2096 2SK1919 60 50 0.007 0.01 2SK2121 2SK2203 6. DV-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID TO-126 TO-220 TO-220 TO-220 TO-3 (V) (A) Typ Max FM AB FM CFM TO-3P PFM (SOP-8) DPAK LDPAK HDPAK 60 50 0.007 2SK2529 2SK2553 2SK2586 23

SERIES LINEUP Table 2-11 Power MOS FET Packages Pack- V DSS ID R DS(on) Pack- V DSS ID R DS(on) Pack- V DSS ID R DS(on) Pack- V DSS I D R DS(on) age (V) (A) ( Ω) age (V) (A) ( Ω) age (V) (A) ( Ω) age (V) (A) ( Ω) 60 to 2.5 to 4.5 m to TO-3P 60 to 12 to 0.015 to TO- 250 to 8 to 0.08 to SP-10 60 2.5 to 0.033 TO-3P SP-12 1500 75 9.0 ·FM 1500 50 9.0 3PL 1500 50 1.9 SP-12TA 100 10 to 0.25 SP-12 SP-10 SP-12TA 60 to 1 to 0.011 TO-220 30 to 2 to 7m 20 to 2 to 0.03 60 to 3 to 7 m to TO-220 DPAK LDPAK 900 30 to 5.0 FM/CFM 900 50 to 5.0 60 20 to 25 900 50 3.0 TO-220FM TO-220CFM TO- 30 60 to 1.5 to 12 to 0.5 to 0.28 to 450 to 0.13 to 1.5 0.3 TO-92 0.3 UPAK F 30 92M 60 100 3.5 200 2.0 8.0 500 0.15 450 to 0.08 to 60 to 2.5 to 0.015 to 20 to 1.4 to 20 to 2.5 to 0.012 to C 50 HDPAK MPAK 0.2 SOP-8 500 0.09 1500 20 12 50 5.0 60 10 0.2 FP-8D EIAJ SOP-8 FP-8DA JEDEC SOP-8 24

Section 6. Standard Lead Forming Specification TO-220FM Unit : mm B D 10.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 10.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 0.6 17.0 ± 0.3 12.0 ± 0.3 2.0 2.5 4.5 10.5 min 11.5 min 7.0 min 5.0 6.5 5.0 F J 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 0.6 12.0 ± 0.3 16.8 4.4 10.5 min 13.0 min 3.0 min 3.8 G 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 2.0 7.5 min 4.0 2.54 1

STANDARD LEAD FORMING SPECIFICATION TO-220 Unit : mm A J 3.0 max φ 3.6 +0.1 3.0 max 11.5 max φ 3.6 –0.08 +0.1 11.5 max 4.8 max –0.08 4.8 max 9.8 max 9.8 max 1.27 1.27 7.6 min 1.5 max 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 14.8 14.8 9.0 min 6.0 min B F 3.0 max 11.5 max φ 3.6 +0.1 3.0 max 11.5 max φ 3.6 +0.1 9.8 max –0.08 4.8 max 1.27 9.8 max –0.08 4.8 max 1.5 max 1.27 1.5 max 7.6 min 7.6 min 6.3 min 6.3 min 15.3 max 15.3 max 15.24 14.8 2.5 9.0 min 5.0 min P N φ 3.6 +0.1 3.0 max 11.5 max –0.08 4.8 max 3.0 max 9.8 max 11.5 max φ 3.6 +0.1 1.27 7.6 min 1.5 max 9.8 max –0.08 4.8 max 1.27 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 16.0 4.0 10.5 min 12.0 min 5.6 Center lead 2

STANDARD LEAD FORMING SPECIFICATION TO-220 (cont) Unit :mm E D φ 3.6 +0.1 3.0 max φ 3.6 +0.1 11.5 max 3.0 max 11.5 max –0.08 –0.08 9.8 max 4.8 max 9.8 max 4.8 max 1.27 1.27 7.6 min 1.5 max 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 4.0 4.0 10.5 min 10.5 min Center lead 5.6 Center lead 5.6 C L φ 3.6 +0.1 3.0 max 11.5 max –0.08 φ 3.6 +0.1 3.0 max 11.5 max 9.8 max 4.8 max 1.27 –0.08 9.8 max 4.8 max 7.6 min 1.5 max 1.27 7.6 min 1.5 max 6.3 min 6.3 min 10.5 min 15.3 max 2.4 3.0 9.0 min 6.0 min 10.0 7.35 3

STANDARD LEAD FORMING SPECIFICATION TO-3P Unit : mm A B φ 3.2 ± 0.2 5.0 ± 0.3 16.0 max 5.0 max φ 3.2 ± 0.2 1.0 1.5 5.0 ± 0.3 5.0 max 0.5 16.0 max 1.0 1.5 0.5 14.9 ± 0.2 20.1 max 14.9 ± 0.2 20.1 max 2.0 18.0 1.6 1.4 max 8.5 14.3 min 17.5 min 2.0 17.0 min 5.45 F G φ 3.2 ± 0.2 φ 3.2 ± 0.2 5.0 ± 0.3 5.0 ± 0.3 16.0 max 5.0 max 5.0 max 16.0 max 1.0 1.0 1.5 1.5 0.5 0.5 14.9 ± 0.2 20.1 max 14.9 ± 0.2 20.1 max 2.0 2.0 1.6 1.6 7.0 min 7.0 min 1.4 max 12.8 min 1.4 max 14.7 min 15.3 min 13.1 min 2.0 2.0 9.0 9.4 4

STANDARD LEAD FORMING SPECIFICATION TO-3PFM Unit : mm F-1 F-5 φ 3.2 +0.4 –0.2 φ 3.2 +0.4 –0.2 5.0 ± 0.3 5.0 ± 0.3 16.0 max 19.9 ± 0.3 5.8 max 16.0 max 5.8 max 19.9 ± 0.3 4.0 4.0 7.0 8.5 17.0 3.1 20.1 5.9 5.45 9.0 F-6 φ 3.2 +0.4 –0.2 5.0 ± 0.3 16.0 max 5.8 max 19.9 ± 0.3 4.0 7.0 17.4 19.2 5.6 3.8 5

Section 7. Package Information Outline Dimensions Unit : mm • TO-3P • TO-3PFM φ 3.2 ± 0.2 0.4 φ 3.2 + 0.2 – 16.0 Max 5.0 ± 0.3 5.0 Max 5.8 Max 16.0 Max 1.0 1.5 5.0 ± 0.3 0.5 19.9 ± 0.3 20.1 Max 14.9 ± 0.2 5.0 2.7 0.3 2.0 1.6 4.0 1.4 Max 2.6 2.0 2.8 1.4 Max 21.0 ± 0.5 18.0 ± 0.5 1.6 3.2 1.4 Max 1.0 ± 0.2 0.6 ± 0.2 0.6 ± 0.2 1.0 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 5.45 ± 0.5 5.45 ± 0.5 • TO-3PL • TO-92 (1) 5.2 Max 4.2 Max 6.0 ± 0.2 20.0 ± 0.3 5.0 ± 0.2 5.2 Max 3.3 ± 0.2 26.0 ± 0.3 12.7 Min 0.60 Max 0.7 2.3 Max 0.5 1.6 0.5 Max 0.55 Max 1.4 20.0 ± 0.6 3.0 2.5 ± 0.3 2.2 0.25 1.2 + 0.1 – 5.45 ± 0.5 5.45 ± 0.5 0.25 0.6 + 0.1 – 2.8 ± 0.2 1.0 1.27 3.8 7.4 2.54 6

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • TO-92MOD • TO-220AB 5.2 Max 4.2 Max 11.5 Max 8.5 Max 3.0 Max 9.8 Max φ 3.6 + 0.08 – 0.1 4.8 Max 1.27 7.6 Min 1.5 Max 6.3 Min 15.3 Max 18.5 ± 0.5 0.70 Max 0.75 Max 10.1 Min 0.7 2.3 Max 0.60 Max 0.55 Max 0.5 Max 1.5 Max 12.7 Min 0.5 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.7 Max 5.1 ± 0.5 1.27 2.54 • TO-220FM • TO-220CFM 2.8 ± 0.2 10.0 ± 0.3 2.52 ± 0.2 7.0 ± 0.3 φ 3.2 ± 0.2 10.0 ± 0.3 φ 3.2 ± 0.2 2.7 ± 0.2 0.6 17.0 ± 0.3 15.0 ± 0.3 5.0 ± 0.3 12.0 ± 0.3 12.0 ± 0.3 1.2 ± 0.2 1.0 ± 0.2 2.0 ± 0.3 1.4 ± 0.2 4.45 ± 0.3 1.15 ± 0.2 4.5 ± 0.3 14.0 ± 1.0 13.6 ± 1.0 4.1 ± 0.3 2.7 2.5 ± 0.2 0.6 ± 0.1 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.7 ± 0.1 7

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • FP-8D (EIAJ SOP-8) • FP-8DA (JEDEC SOP-8) 5.25 Max 5.2 Max 5 4.55 Max 8 8 5 4.05 Max 1 4 1 4 2.00 Max 2.03 Max 0.05 0.20 + 0.02 1.75 Max 0.75 Max 6.80 Max + 0.05 – 0.02 0.75 Max – 6.3 Max 0.20 0 – 10 ° 0 – 10 ° 0.10 ± 0.10 + 0.25 1.27 0.10 ± 0.10 0.60 – 0.18 0.25 0.60 + 0.18 1.27 – + 0.10 0.40 – 0.05 0.40 + 0.10 – 0.05 0.1 0.1 0.12 M 0.12 M • MPAK • UPAK + 0.1 0.65 – 0.3 + 0.10 0.10 0.4 + 0.05 – 0.16 – 0.06 3 + 0.2 – 0.6 0 – 0.15 1.5 2.8 4.5 ± 0.1 1.8 Max 1.5 ± 0.1 (1.6) 0.4 0.44 Max 2 1 2.5 ± 0.1 φ1 0.1 0.65 + 0.3 4.25 Max 0.95 (2.5) 0.95 – 1.9 0.53 Max (0.2) (0.4) 0.44 Max 0.3 2.8 + 0.1 0.48 Max 0.8 Min – 1.5 1.5 0.3 3.0 + 0.2 1.1 – 0.1 8

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • DPAK-1 (L) 1.7 ± 0.5 • DPAK-1 (S) 6.5 ± 0.5 2.3 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 3.1 ± 0.5 5.5 ± 0.5 7.2 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 (4.9) 5.4 ± 0.5 0.55 ± 0.1 1.15 ± 0.1 16.2 ± 0.5 (5.3) 5.5 ± 0.5 0.8 ± 0.1 1.2 Max 9.5 0 - 0.25 2.5 ± 0.5 1.15 ± 0.1 (1.9) 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 1.5 Max • DPAK-2 (L) • DPAK–2 (S) 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 3.1 ± 0.5 5.5 ± 0.5 7.2 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 (4.9) 5.4 ± 0.5 0.5 ± 0.1 1.15 ± 0.1 16.2 ± 0.5 (5.3) 5.5 ± 0.5 1.2 Max 0.8 ± 0.1 9.5 0 - 0.25 2.5 ± 0.5 1.15 ± 0.1 (1.9) 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 1.5 Max 9

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • LDPAK (L) (1.4) • LDPAK (S) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 1.5 – 2.4 11.3 ± 0.5 0.3 10.0 + 0.5 10.2 8.6 ± 0.3 (1.4) 4.44 ± 0.2 7.6 – 10.2 ± 0.3 1.3 ± 0.2 6.6 (1.5) 6.0 – 7.4 7.2 – 8.2 9.2 – 10.3 0.3 8.6 ± 0.3 10.0 + 0.5 1.27 ± 0.2 – (1.5) (1.5) 1.2 ± 0.2 2.59 ± 0.2 0.2 0.1 + 0.1 – 0.8 2.35 11.0 ± 0.5 0.2 0.86 + 0.1 – 1.27 ± 0.2 2.59 ± 0.2 0.76 ± 0.1 0.4 ± 0.1 0.3 3.0 + 0.5 1.2 ± 0.2 0.2 0.86 + 0.1 7.8 – – 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 • HDPAK (L) • HDPAK (S) 4.8 ± 0.2 4.8 ± 0.2 15.6 ± 0.3 15.6 ± 0.3 1.5 ± 0.2 (2.0) (1.5) 1.5 ± 0.2 13.6 (2.0) (1.5) 13.6 4 4 13.5 ± 0.3 15.7 ± 0.3 +0.3 –0.5 13.5 ± 0.3 11.3 ± 0.3 +0.3 15.0 –0.5 1.5 ± 0.3 15.0 2.8 ± 0.2 0.3 1 2 3 +0.3 1.6 ± 0.2 2.0 ± 0.2 2.8 ± 0.2 0.1 –0.5 1.6 ± 0.2 2.0 ± 0.2 18.0 ± 0.5 1.2 ± 0.2 1.2 ± 0.2 1.2 ± 0.2 1.2 ± 0.2 0.6 ± 0.2 4.5 ± 0.5 0.2 Min 1.0 ± 0.2 1.0 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 1 2 3 5.45 ± 0.5 5.45 ± 0.5 0.6 ± 0.2 7.4 ±0.2 7.4 ±0.2 1.0 ± 0.2 1.0 ± 0.2 1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 3.6 ± 0.2 10

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • SP-10 • SP-12 26.5 ± 0.3 4.0 ± 0.2 31.0 ± 0.3 4.0 ± 0.2 10.0 ± 0.3 10.0 ± 0.3 2.5 2.5 10.5 ± 0.5 1.5 ± 0.2 10.5 ± 0.5 1.5 ± 0.2 1.82 2.54 1.4 1.2 0.55 0.85 ± 0.1 1.4 1.15 2.54 0.55 ± 0.1 0.55 ± 0.1 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 • SP-12TA 31.3 +0.2 –0.3 5.0 ± 0.2 24.4 ± 0.1 16.4 ± 0.3 3.8 2.0 ± 0.1 3.2 3.0 φ 3.2 16.0 ± 0.3 10.0 ± 0.3 2.7 10.5 ± 0.5 1.15 2.2 ± 0.2 2.54 1.4 0.85 ± 0.1 +0.1 1.0 0.55 –0.06 1 2 3 4 5 6 7 8 9 10 11 12 11

2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • Low on–resistance 12 3 • High speed switching 12 3 • Low drive current • 4 V gate drive device - - - can be driven from S Type L Type 5 V source D • Suitable for DC – DC convertor, motor drive, 1. Gate power switch, solenoid drive G 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ234 L , 2SJ234 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = –1.5 A resistance VGS = –10 V * —————————— —————————— — 0.5 0.7 ID = –1.5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.8 — S ID = –1.5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 245 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 170 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = –1.5 A ———————————————————————————————— Rise time tr — 25 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 85 — ns RL = 20 Ω ———————————————————————————————— Fall time tf — 72 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 80 — ns IF = –2.5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ234 L , 2SJ234 S Power vs. Temperature Derating Maximum Safe Operation Area 20 – 50 – 30 10 µs Pch (W) – 10 15 ea 10 ar ) Drain Current I D (A) 0 s on PW µs –3 t hi S( 1 in D = m Channel Dissipation n yR 10 s tio d b m 10 ra e D (T s pe it C c (1 O lim O = –1 sh pe 2 is ot ra 5°C ) tio ) n 5 – 0.3 Ta = 25°C – 0.1 – 0.05 0 50 100 150 200 – 0.1 – 0.3 –1 –3 – 10 – 30 – 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –5 – 10 – 10 V –8V Pulse Test –6V –4V V DS = –10 V –4 –8 Pulse Test Drain Current I D (A) Drain Current I D (A) – 25°C –3 – 3.5 V –6 Tc = 25°C 75°C –2 –3V –4 –1 V GS = – 2.5 V –2 0 –2 –4 –6 –8 – 10 0 –2 –4 –6 –8 – 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ234 L , 2SJ234 S Drain to Source Saturation Voltage Static Drain to Source on State Resistance vs. Gage to Source Voltage vs. Drain Current – 2.0 5 Pulse Test Drain to Source Saturation Voltage Pulse Test – 1.6 2 Static Drain–Source on State Resistance R DS (on) ( Ω ) 1 – 1.2 V DS (on) (V) –3A V GS = – 4 V 0.5 –10 V – 0.8 –2A 0.2 – 0.4 I D = –1 A 0.1 0.05 0 –2 –4 –6 –8 – 10 – 0.2 – 0.5 –1 –2 –5 –10 – 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 2.0 5 Pulse Test Forward Transfer Admittance 1.6 2 Static Drain–Source on State – 25°C Resistance R DS (on) ( Ω ) ID =–3A 1 Tc = 25°C 1.2 |y fs| (S) 75°C 0.5 V GS = – 4 V 0.8 –2A –1 A 0.2 V DS = –10 V –3A Pulse Test 0.4 –1,– 2 A 0.1 V GS = –10 V 0 0.05 – 40 0 40 80 120 160 – 0.2 – 0.5 –1 –2 –5 –10 – 20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ234 L , 2SJ234 S Typical Capacitance vs. Body – Drain Diode Reverse Recovery Time Drain to Source Voltage 1000 10000 di / dt = 50 A / µ s, Ta = 25°C V GS = 0 Reverse Recovery Time trr (ns) 300 VGS = 0 f = 1 MHz Capacitance C (pF) 100 1000 30 Ciss Coss 10 100 Crss 3 1 10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 –10 – 20 – 30 – 40 – 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V DD = –10 V . V GS = –10 V,VDD = – 30 V . ID = – 3 A PW = 2 µs, duty 1 % – 25 V –10 –4 300 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) td (off) Switching Time t (ns) 100 – 20 –8 tf V DS V DD = – 25 V 30 – 30 –12 tr –10 V 10 td (on) V GS – 40 –16 3 – 50 – 20 1 0 4 8 12 16 20 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Gate Charge Q g (nc) Drain Current I D (A) 5

2SJ234 L , 2SJ234 S Reverse Drain Current vs. Source to Drain Voltage –10 Pulse Test –8 Reverse Drain Current I DR (A) –6 V GS = –15 V –4 –10 V –5V –2 0, 5 V 0 0 – 0.4 – 0.8 –1.2 –1.6 – 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C e 0.02 Puls PW hot D= T 1s P DM 0.03 0.01 PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ234 L , 2SJ234 S Switching Time Test Circuit Waveforms Vin Vin Monitor 10 % Vout Monitor D.U.T 90 % RL 90 % 90 % Vin –10 V 50 Ω . V DD = –30 V . Vout 10 % 10 % td (on) tr td (off) tf 7

2SJ244 Silicon P Channel MOS FET (DIII-L) Application UPAK High speed power switching 1 2 Low voltage operation 3 Features 4 • Very low on–resistance D • High speed switching 1. Gate • Suitable for camera or VTR motor drive 2. Drain G circuit, power switch, solenoid drive and etc. 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –12 V ——————————————————————————————————————————— Gate to source voltage VGSS ±7 V ——————————————————————————————————————————— Drain current ID ±2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW < 100 µs, duty cycle < 10 % ** Value on the alumina ceramic board (12.5x20x0.7 mm) *** Marking is "JY". 1

2SJ244 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –12 — — V ID = –1 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±7 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff current IGSS — — ±5 µA VGS = ±6 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –8 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.4 — –1.4 V ID = –100 µA VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 0.65 0.9 Ω ID = –0.5 A * resistance VGS = –2.5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 0.5 -– Ω ID = –1 A * resistance VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| — 1.8 — S ID = –1 A * VDS = –5 V ——————————————————————————————————————————— Input capacitance Ciss — 130 — pF VDS = –5 V ———————————————————————————————— Output capacitance Coss — 50 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 260 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time t(on) — 365 — ns ID = –0.2 A*, Vin = –4 V ———————————————————————————————— Turn–off delay time t(off) — 1450 — ns RL = 51 Ω ——————————————————————————————————————————— Body–drain diode forward VDF — — 7 V IF = 4 A*, VGS = 0 voltage ——————————————————————————————————————————— * Pulse Test 2

2SJ244 Maximum Channel Power Dissipation Curve Safe Operation Area 2.0 -10 Operation in this Area is limited by R DS(on) PW = 1 ms 1 shot Channel Power Dissipation Pch ( W ) -3 (on the alminam ceramic board) 1.5 Drain Current I D ( A ) -1.0 D C O pe ra tio 1.0 -0.3 n* * -0.1 0.5 -0.03 Ta=25°C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 0 50 100 150 200 Drain to Source Voltage V DS (V) Ambient Temperature Ta ( °C ) **ON the almina ceramic board Typical Output Characteristics Typical Forward Transfer Characteristics -5 -5 -5 VDS = -5 V Ta = -25 °C -3.5 -4 - 4.5 Pulse Test +25 -4 -4 (A) (A) +75 -3 ID ID -3 -3 Drain Current Drain Current -2.5 -2 -2 -2 -1 -1 Pulse Test V GS = -1.5 V 0 -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ244 Forward Transfer Admittance vs. Drain to Source On State Resistance Drain Current vs. Drain Current 10 Drain to Source On State Resistance R DS(on) (Ω ) 20 VDS = -5 V Pulse Test Forward Transfer Admittance |Yfs| ( S ) Pulse Test 10 5 5 2 Ta = -25 °C -2 V 2 +25 1.0 -3 V +75 1.0 0.5 VGS = -4 V 0.5 0.2 0.2 0.1 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Drain Current ID (A) Drain Current I D (A) Drain to Source Saturation Voltage Drain to Source On State Resistance vs. Gate to Source Voltage vs. Case Temperature Drain to Source Saturation Voltage V DS(on) ( V ) Drain to Source On State Resistance R DS(on) (Ω ) 1.0 1.0 Pulse Test Pulse Test I D = -1 A 0.8 0.8 VGS = -2.5 V -0.5 A 0.6 I D = -1 A 0.6 -0.5 A 0.4 I D = -1 A -0.5 0.4 VGS = -4 V -0.2 0.2 0.2 -0.1 0 0 -1 -2 -3 -4 -5 -25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc ( °C ) 4

2SJ244 Reverse Recovery Time vs. Reverse Drain Current Switching Time vs. Drain Current 2000 2000 VGS = - 4 V, V DD = - 10 V di/dt = -10 A/µs PW = 2 µs, Duty Cycle = 1 % PW = 10 µs t rr ( ns ) 1000 1000 td(off) tf 500 500 t ( ns ) tr Reverse Recovery Time 200 200 Switching Time 100 100 td(on) 50 50 20 20 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) Drain Current I D (A) Typical Capacitance vs. Dynamic Input Characteristics Drain to Source Voltage -25 -10 1000 VGS = 0 I D = -4 A -5 V f = 1 MHz 500 (V) V GS ( V ) Pulse Test ( pF ) V DD = -10 V -20 -8 Coss V DS C 200 V GS Typical Capacitance -15 -6 Gate to Source Voltage Drain to Source Voltage Ciss 100 -10 -4 Crss 50 -5 -2 20 V DD = -10 V -5 V V DS 10 0 0 2 4 6 8 10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Gate Charge Qg ( nc ) Drain to Source Voltage V DS (V) 5

2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 Pulse Test (A) -3 Reverse Drain Current I DR -2 -4 V -2.5 V -1 VGS = 0 0 -0.5 -1.0 -1.5 -2.0 Source to Drain Voltage VSD (V) 6

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 12 • Low on–resistance 3 • High speed switching • Low drive current 2, 4 • 4 V Gate drive device can be driven 1 from 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ245 L , 2SJ245 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.2 0.25 Ω ID = –3 A resistance VGS = –10 V * ————————————————————————– — 0.28 0.38 Ω ID = –3 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 2.2 3.7 — S ID = –3 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 610 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 315 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 95 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 12 — ns ID = –3 A ———————————————————————————————— Rise time tr — 45 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 170 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 90 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.1 — V IF = –5 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– 2

2SJ245 L , 2SJ245 S Maximum Safe Operation Area Power vs. Temperature Derating –100 30 Operation in this area is limited by RDS(on) I D (A) Channel Dissipation Pch (W) 10 µs –30 10 0 –10 µs 20 1 m PW Drain Current s = D 10 –3 C m O s pe (1 ra sh tio 10 –1 ot n ) (T c = 25 –0.3 °C ) Ta = 25°C 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –5 –10 V –6 V –5 V –4 V 25°C Tc = –25°C –8 –4 I D (A) I D (A) 75°C Pulse test Pulse test –6 –3 V DS = –10 V –3.5 V Drain Current Drain Current –4 –2 –3 V –2 –1 VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ245 L , 2SJ245 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current Static Drain to Source on State Resistance –1.0 5 R DS(on) ( Ω) Drain to Source Saturation Voltage V DS(on) (V) Pulse test –0.8 2 I D = –3 A 1 –0.6 0.5 –2 A –0.4 VGS = –4 V –10 V 0.2 –1 A –0.2 0.1 Pulse test 0.05 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. Temperature vs. Drain Current 1.0 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs | (S) Pulse test R DS(on) ( Ω) 25°C 5 Tc = –25°C 0.8 2 0.6 –1, –2 A 75°C –3 A 1 VGS = –4 V 0.4 –3 A 0.5 0.2 –I D = –1, –2 A 0.2 Pulse test –10 V VDS = –10 V 0 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ245 L , 2SJ245 S Typical Capacitance vs. Body to Drain Diode Reverse Recovery Time 1000 Drain to Source Voltage 2000 t rr (ns) 500 1000 Ciss Reverse Recovery Time 200 500 C (pF) 100 200 Coss Capacitance 50 100 di/dt = 50 A/µs V GS = 0 Crss 20 50 Ta = 25°C V GS = 0 Pulse test f = 1 MHz 10 20 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V DS (V) V DD = –10 V V GS (V) –25 V t d (off) –20 –50 V –4 200 t (ns) tf Drain to Source Voltage V DD = –50 V 100 Gate to Source Voltage –40 –25 V –8 V GS = –10 V Switching Time –10 V 50 V DD = –30 V V DS –60 –12 PW = 2 µ s tr duty ≤ 1% 20 VGS t d (on) –80 –16 10 I D = –5 A –100 –20 5 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ245 L , 2SJ245 S Reverse Drain Current vs. Source to Drain Voltage –5 I DR (A) –4 Reverse Drain Current –3 –10 V –2 –5 V VGS = 0, 5 V –1 Pulse test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 6

2SJ245 L , 2SJ245 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 • Low on–resistance 3 • High speed switching • Low drive current 2, 4 • 4V gate drive device can be driven from 1 5V source. 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ246 L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.17 Ω ID = –4 A resistance VGS = –10 V ———————————————————————— — 0.21 0.31 Ω ID = –4 A VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S VDS = –10 V ID = –4 A ——————————————————————————————————————————— Input capacitance Ciss — 660 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 465 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns VGS = –10 V ———————————————————————————————— Rise time tr — 55 — ns ID = –4 V ———————————————————————————————— Turn–off delay time td(off) — 135 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — µs IF = –7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ246 L , 2SJ246 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –50 –30 10µs Pch (W) 100µs I D (A) 30 –10 PW 1 m = s DC 10 m Op s( er 1 –3 sh Power Dissipation Drain Current at ot 20 ion ) (T c= 25 –1 Operation in this area is °C ) limited by R DS(on) 10 –0.3 Ta = 25°C –0.1 0 50 100 150 200 –0.3 –1 –3 –10 –30 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –5 V –4 V Tc = –25°C –6 V –8 Pulse test –8 (A) (A) –10V Pulse test 25°C VDS = –10 V ID ID –3.5 V 75°C –6 –6 Drain Current Drain Current –4 –4 –3 V –2 –2 VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ246 L , 2SJ246 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance –2.0 5 Drain to Source Saturation Voltage R DS (on) (Ω ) Pulse test Pulse test V DS(on) (V) –1.6 2 1 –1.2 0.5 –0.8 I D = –5 A VGS = –4 V 0.2 –1 A –2 A –10 V –0.4 0.1 0.05 0 –2 –4 –6 –8 –10 –0.1 –1 –10 –100 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 10 R DS (on) (Ω ) Pulse test Pusle test V DS = –10 V Forward Transfer Admittance 0.4 5 I D = –5 A |y fs | (S) –2 A –25°C 0.3 –1 A VGS = –4 V 2 Tc = 25°C 0.2 –5 A 75°C –10 V 1 0.1 –1 A, –2 A 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ246 L , 2SJ246 S Body to Drain Diode Reverse Typical Capacitance vs. Drain to Recovery Time Source Voltage 200 10000 VGS = 0 t rr (ns) 5000 f = 1 MHz 100 (pF) Reverse Recovery Time 2000 C 50 1000 Capacitance Ciss 500 Coss 20 di/dt = 50 A/µs, Ta = 25°C 200 VGS = 0, Pulse test Crss 10 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 VGS = –10 V, PW = 2 µs, V GS (V) VDD = –10 V V DS (V) –25 V : VDD = –30 V, duty < 1 % = –20 –4 200 td(off) t (ns) VDS VDD = –25 V 100 tf Gate to Source Voltage Drain to Source Voltage –40 –10 V –8 50 Switching Time tr –60 VGS –12 20 –80 –16 td(on) I D= –7 A 10 –100 –20 5 0 –8 –16 –24 –32 –40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ246 L , 2SJ246 S Reverse Drain Current vs. Source to Drain Voltage –10 Pulse test (A) –8 I DR Reverse Drain Current –6 –10 V –4 –5 V –2 VGS = 0, 5 V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 6

2SJ246 L , 2SJ246 S Normal Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% . 90% –10 V 50Ω = –30 V . Vout 10% 10% t d (on) tr t d (off) tf 7

2SJ247 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V Gate drive device can be driven 1 23 1. Gate from 5 V source 1 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –8 A ——————————————————————————————————————————— Channel dissipation Pch** 40 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ247 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –100 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.25 0.3 Ω ID = –4A resistance VGS = –10 V * ———————————————————————— — 0.3 0.45 Ω ID = –4 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.5 — S ID = –4A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 880 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 325 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 80 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = –4A ———————————————————————————————— Rise time tr — 47 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — ns IF = –8 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ247 Power vs. Temperature Derating Maximum Safe Operation Area 60 –50 10 µs –30 Channel Dissipation Pch (W) 10 0 –10 PW µs = Drain Current I D (A) 1 10 m 40 s m D c= –3 s C (T (1 O 25 Sh pe °C ot ra ) ) tio –1 n 20 Operation in –0.3 this area is limited by R DS (on) Ta = 25°C –0.1 –0.05 0 50 100 150 –1 –3 –10 –30 –100 –300 –1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test –6 V Pulse Test –25°C –16 –4.5 V –8 Tc = 75°C VDS = –10 V Drain Current I D (A) Drain Current I D (A) 25°C –12 –4 V –6 –8 –3.5 V –4 –4 –3 V –2 –2.5 V 0 –4 –8 –12 –16 –20 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SJ247 Drain to Source Saturation Voltage Static Drain to Source on State Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Resistance vs. Drain Current –5 5 Static Drain to Source on State Pulse Test Pulse Test –4 2 Resistance RDS (on) (Ω ) ID = –10 A 1 –3 0.5 VGS = –4 V –2 –10 V –5 A 0.2 –1 –2 A 0.1 0.05 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 50 Pulse Test Forward Transfer Admittance |y fs | (s) State Resestance RDS (on) (Ω ) 0.8 –10 A 20 Pulse Test Static Drain to Source on VDS = –10 V 25°C –5 A 10 0.6 Tc = –25°C 5 0.4 –4 V –2 A 75°C 2 0.2 –2,–5 A –10 A 1 VGS = –10 V 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ247 Body-Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain-Source Voltage 500 10000 Reverse Recovery Time t rr (ns) 200 3000 VGS = 0, f = 1 MHz C (pF) 100 1000 Ciss 50 300 Capacitance Coss 20 di/dt = 50 A/ µ s 100 VGS = 0 Crss 10 30 0.5 10 –0.2 –0.5 –1 –2 –5 –10 –20 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 VDD = –10 V :. VGS = –10 V, VDD = –30 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) –25 V Pw = 2 µ s, duty ≤ 1% –20 –50 V –4 200 Switching Time t (ns) –50 V t d (off) –25 V 100 –40 –8 VDS VDD = –10 V 50 tf –60 –12 VGS 20 tr I D = –8 A –80 –16 10 t d (on) –100 –20 5 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ247 Reverse Drain Current vs. Source to Drain Voltage –20 I DR (A) Pulse Test –16 Reverse Drain Current –12 –8 –10 V –5 V –4 VGS = 0 V, 5 V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) 6

2SJ247 7

2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features 4 • Low on–resistance • High speed switching 2, 4 • Low drive current • 4 V gate drive device can be driven from 1. Gate 1 5 V source 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –1 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –1 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is "MY". 1

2SJ278 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.7 0.83 Ω ID = –0.5 A resistance VGS = –10 V * ———————————————————————— — 0.9 1.2 Ω ID = –0.5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 160 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 80 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 28 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = –0.5 A ———————————————————————————————— Rise time tr — 8 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 30 — ns RL = 60 Ω ———————————————————————————————— Fall time tf — 25 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –1 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — µs IF = –1 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ278 Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –5 –3 1 Pch** (W) 10 0 µ PW 0 s I D (A) –1 µs = 1 1.5 10 m s D m C s –0.3 O (1 Channel Dissipation sh Drain Current pe 1.0 Operation in ra ot tio ) –0.1 this area is n limited by R DS(on) 0.5 –0.03 –0.01 Ta = 25 °C –0.005 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –1.0 –2.0 –10 V –6 V Pulse Test V DS = –10 V –4 V –0.8 Pulse Test (A) –1.6 I D (A) –3 V ID –1.2 –0.6 Drain Current Drain Current 75 °C Tc = –25 °C –0.8 –0.4 25 °C –2.5 V –0.4 –0.2 VGS = –2 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ278 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 I D = –1 A 2 VGS = –4 V 1 -0.6 0.5 –10 V -0.4 –0.5 A 0.2 –0.2 –0.2 A 0.1 0.05 0 –2 –4 –6 –8 –10 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 5 Static Drain to Source on State Resistance 2.0 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 1.6 –0.5 A 2 –1 A –0.2 A Tc = –25 °C 1 1.2 –1 A 25 °C VGS = –4 V 0.5 75 °C 0.8 –0.5 A –10 V –0.2 A 0.2 V DS = –10 V 0.4 0.1 Pulse Test 0 0.05 –40 0 40 80 120 160 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ278 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) di/dt = 50 A/µs Capacitance C (pF) 200 VGS = 0, duty < 1 % Ciss 100 100 Coss 50 Crss 10 20 10 VGS = 0 f = 1 MHz 5 1 –0.02 –0.05 –0.1 –0.2 –0.5 –1 –2 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –10 V V GS = –10 V, V DD = –30 V –25 V PW = 2 µs, duty < 1 % –20 –40 V –4 200 Switching Time t (ns) 100 Gate to Source Voltage Drain to Source Voltage –40 –8 tf V DS t d(off) 50 –60 V DD = –10 V –12 –25 V V GS 20 –40 V –80 –16 tr 10 t d(on) –100 –20 5 0 4 9 12 16 20 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ278 Reverse Drain Current vs. Source to Drain Voltage –1.0 Pulse Test Reverse Drain Current I DR (A) –0.8 –10 V –5 V –0.6 –0.4 V GS = 0, 5 V –0.2 0 –0.4 –0.8 –1.2 –1.6 –2.0 Drain to Source Voltage V DS (V) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 6

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source • Avalanche Ratings 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Avalanche current IAP*** –5 A ——————————————————————————————————————————— Avalanche energy EAR*** 2.1 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ279 L , 2SJ279 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.18 0.20 Ω ID = –3 A resistance VGS = –10 V * ———————————————————————— — 0.23 0.27 Ω ID = –3 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 340 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 110 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –3 A ———————————————————————————————— Rise time tr — 35 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 125 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 140 — µs IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ279 L , 2SJ279 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –30 n 10µs tio ) s n –20 R ai (o a er S by re Pch (W) p D d sa O 10 ite thi 0µ Drain Current I D (A) –10 lim in s 30 1m s PW –5 = Channel Dissipation D 10 C m 20 O s pe (1 –2 ra Sh tio ot n ) –1 (T 10 c = 25 –0.5 °C ) Ta = 25°C –0.3 0 50 –1 –2 –5 –10 –20 –50 –100 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –5 –10V –5V Pulse Test Pulse Test VDS = –10 V –8 –4V –4 I D (A) I D (A) –3.5V –6 –3 Drain Current Drain Current –4 –3V –2 Tc = 75°C 25°C –2 –1 VGS = –2.5 V –25°C 0 0 –2 –4 –6 –8 –10 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) 3

2SJ279 L , 2SJ279 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Gate to Drain Voltage Resistance vs. Drain Current –2.0 1 Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Pulse Test Resistance R DS(on) (Ω) –1.6 0.5 –1.2 I D = –5 A –0.8 VGS = –4 V 0.2 –2 A –0.4 –10 V –1 A 0.1 0 –0.1 –0.2 –0.5 –1 –2 –5 –10 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 0.5 20 Forward Transfer Admittance |yfs| (S) Pulse Test Pulse Test I D = –5 A VDS = –10 V Static Drain to Source on State 0.4 10 Resistance R DS(on) ( Ω) –1, –2 A Tc = –25°C 5 25°C 0.3 –4 V 75°C –5 A 0.2 –1, –2 A 2 VGS = –10 V 0.1 1 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ279 L , 2SJ279 S Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics –5 500 Pulse Test Reverse Drain Current I DR (A) VGS = –10 V –4 200 Switching Time t (ns) td (off) –5 V 0, 5 V 100 –3 50 tf –2 tr 20 td (on) –1 10 : VGS = –10 V , V DD= –30 V PW = 2µs , duty < 1 % = 0 5 –0.4 –0.8 –1.2 –1.6 –2 –0.1 –0.2 –0.5 –1 –2 –5 –10 Source to Drain Voltage V SD (V) Drain Current I D (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 200 3000 Capacitance C (pF) 100 1000 Ciss 50 300 Coss 100 Crss 20 30 VGS = 0 10 di/dt = 50 A/µs , VGS = 0 f = 1 MHz Ta = 25°C 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) 5

2SJ279 L , 2SJ279 S Maximum Avalanche Energy vs. Dynamic Input Characteristics 0 0 Channel Temperature Derationg V DD = –10 V 2.5 Drain to Source Voltage VDS (V) Repetive Avalanche Energy E AR (mJ) Gate to Source Voltage VGS (V) –25 V I AP = –5 A –20 –50 V –4 V DD = –25 V 2.0 duty < 0.1 % V DD = –10 V Rg > 50 Ω = –40 –8 VDS –25 V 1.5 –50 V –60 –12 1.0 I D = –5 A –80 VGS –16 0.5 –100 –20 0 8 16 24 32 40 0 25 50 75 100 125 150 Gate Charge Qg (nc) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ279 L , 2SJ279 S Normalized Transient Thermal Impendance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit and Waveform Vin 10% Vin Monitor Vout Monitor D.U.T. 90% RL 90% 90% Vin V DD 50Ω = –30 V –10 V Vout 10% 10% t d (on) tr t d (off) tf 7

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • Low on–resistance 1 2 1 3 • High speed switching 2 3 2, 4 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ280 L , 2SJ280 S Power vs. Temperature Derating Maximum Safe Operation Area 75 –500 –300 Channel Dissipation Pch (W) 10 µs Drain Current I D (A) ea –100 ar 10 ) on R his 0 S( 50 µs D by t d in 1 DC –30 m ite tion PW atio O s pe lim ra = is pe r 10 O –10 n m (T s 25 c = 25 –3 °C ) Ta = 25°C –1 –0.5 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics –50 –50 –10 V Tc = 25°C –6 V –25°C –40 –4 V –40 75°C Drain Current I D (A) –3.5 V –3 V D (A) Pulse Test –30 –30 V = –10 V Drain Current I GS –20 –2.5 V –20 –10 –10 VGS = –2 V 0 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SJ280 L , 2SJ280 S Drain-Source Saturation Voltage Static Drain-Source on State vs. Gate-Source Voltage Resistance vs. Drain Current –2.0 0.5 Drain to Source Saturation Voltage Static Drain-Source on State Pulse Test Resistance R DS(on) (Ω ) –1.6 0.2 0.1 V DS (on) (V) –1.2 I D = –30 A 0.05 VGS = –4 V –0.8 –20 A –10 V 0.02 –0.4 –10 A 0.01 0.005 0 –2 –4 –6 –8 –10 –2 –5 –10 –20 –50 –100 –200 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.1 100 Pulse Test Forward Transfer Admittance Pulse test VDS = –10 V Static Drain-Source on State 0.08 50 Resistance RDS(on) ( Ω ) I D = –30 A Tc = 25°C 20 0.06 VGS = –4 V –25°C 75°C –10 A, –20 A |y fs | (s) 10 0.04 I D = –30 A 5 0.02 –10 V –10 A, –20 A 2 0 1 –40 0 40 80 120 160 –0.5 –1 –2 –5 –10 –20 –50 Case Temperature TC (°C) Drain Current I D (A) 4

2SJ280 L , 2SJ280 S Body-Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain-Source Voltage 500 10000 Reverse Recovery Time t rr (ns) Ciss 200 C (pF) Coss 100 1000 50 Crss Capacitance 20 di/dt = 50 A/ µ s, VGS = 0 100 Ta = 25°C 10 VGS = 0, f = 1 MHz 5 10 –1 –2 –5 –10 –20 –50 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 VDD = –10 V td(off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) –25 V –20 –50 V –4 500 tf VDS Switching Time t (ns) 200 –40 –8 VDD = –10 V –25 V 100 tr –60 –50 V –12 VGS 50 td(on) I D = –30 A –80 –16 20 : VGS = –10 V, VDD = –30 V PW = 2 µs, duty < 1% = –100 –20 10 0 40 80 120 160 200 –0.5 –1 –2 –5 –10 –20 –50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ280 L , 2SJ280 S Reverse Drain Current vs. Maxmum Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –50 100 Repetive Avaranche Energy E AR (mJ) I AP = –30 A I DR (A) Pulse Test VDD = –25 V –40 80 duty < 0.1% VGS = –10 V Rg >50 Ω = Reverse Drain Current –30 60 –20 40 –5 V 0, 5V –10 20 0 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS E AR = 1 • L • I AP 2 • L 2 VDSS – VDD VDS Monitor I AP V(BR)DSS Monitor I AP Rg VDD D.U.T VDS ID Vin –15 V 50 Ω VDD 0 6

2SJ280 L , 2SJ280 S 7

2SJ291 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven form 1. Gate 5 V source 1 2. Drain 1 • Suitable for Switching regulator, DC – DC 2 3. Source 3 converter • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Avalanche current IAP*** –20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ291 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ———————————————————————— — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ291 Power vs. Temperature Derating Maximum Safe Operation Area 80 –500 –200 Pch (W) I D (A) –100 10 µs 60 –50 10 0µ PW s Channel Dissipation 1m Drain Current –20 DC =1 s 40 Op 0m –10 Operation in era s( this area is tio 1s n( ho –5 limited by R DS(on) Tc t) =2 20 5° C) –2 –1 Ta = 25 °C –0.5 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –50 –20 –10 V –6 V –4.5 V V DS = –10 V –5 V –40 –16 Pulse Test I D (A) (A) Pulse Test ID –30 –4 V –12 Drain Current Drain Current –3.5 V –20 –8 25 °C –3 V Tc = –25 °C –10 –4 75 °C VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ291 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –2.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Pulse Test 0.5 –1.6 0.2 –1.2 –20 A 0.1 VGS = –4 V –0.8 –10 A 0.05 –10 V –0.4 I D = –5 A 0.02 0.01 0 –2 –4 –6 –8 –10 –1 –2 –5 –10 –20 –50 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Static Drain to Source on State Resistance 0.2 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 Tc = –25 °C 25 °C 10 0.12 I D = –20 A 5 75 °C –5 A VGS = –4 V –10 A 0.08 –5 A 2 –10 A V DS = –10 V 0.04 –10 V –20 A 1 Pulse Test 0 0.5 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ291 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/µs Ciss Capacitance C (pF) VGS = 0, duty < 1 % 1000 Coss 200 100 Crss 50 100 VGS = 0 20 f = 1 MHz 10 1 –0.5 –1 –2 –5 –10 –20 –50 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 2 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) I D = –20 A 200 tf Gate to Source Voltage Drain to Source Voltage –40 –8 100 V DS V DD = –10 V tr –60 –25 V –12 50 –50 V t d(on) –80 V GS –16 20 –100 –20 10 0 40 80 120 160 200 –0.2 –0.5 –1 –2 –5 –10 –20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ291 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 50 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –20 A Reverse Drain Current I DR (A) –16 40 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 –10 V 30 –8 –5 V 20 V GS = 0, 5 V –4 10 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ291 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 Ta = 25 °C 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.05 θ ch – c = 2.08 °C/W 0.03 0.02 PW PCM D= 0.01 T 0.01 lse PW t pu 1sho T 0.003 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ292 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 1 23 1. Gate 5 V source 1 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ292 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ280 2

2SJ293 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 • 4 V gate drive device can be driven from 2 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate • Avalanche Ratings 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ293 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.12 Ω ID = –8 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ290 2

2SJ293 Power vs. Temperature Derating Maximum Safe Operation Area 45 –100 10µs Channel Dissipation Pch (W) 10 –30 0µ is s n) ea PW 1 m I D (A) (o ar 30 s = D S is –10 10 R th DC m by in s O d on (1 pe ite rati sh ra lim pe tio ot –3 ) Drain Current n O (T c 15 = 25 Ta = 25°C °C –1 ) –0.3 0 50 100 150 –0.1 Case Temperature Tc (°C) –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3

2SJ296 L , 2SJ296 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 2 • High speed switching 2, 4 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ296 L , 2SJ296 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ————————————————————————– — 0.09 0.15 Ω ID = –8 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test See characteristic curves of 2SJ290 2

2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 • High speed switching 2, 4 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————– Drain to source voltage VDSS –60 V ———————————————————————————————————————————– Gate to source voltage VGSS ±20 V ———————————————————————————————————————————– Drain current ID –20 A ———————————————————————————————————————————– Drain peak current ID(pulse)* –80 A ———————————————————————————————————————————– Body–drain diode reverse drain current IDR –20 A ———————————————————————————————————————————– Avalanche current IAP*** –20 A ———————————————————————————————————————————– Avalanche energy EAR*** 34 mJ ———————————————————————————————————————————– Channel dissipation Pch** 60 W ———————————————————————————————————————————– Channel temperature Tch 150 °C ———————————————————————————————————————————– Storage temperature Tstg –55 to +150 °C ———————————————————————————————————————————– * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ297 L , 2SJ297 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ————————————————————————– — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test See charactristics curves of 2SJ291 2

2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 1 32 Features 4 • Very low on–resistance 2, 4 • High speed switching • Suitable for camera or VTR motor drive circuit, 1. Gate power switch, solenoid drive and etc. 1 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –12 V ——————————————————————————————————————————— Gate to source voltage VGSS ±7 V ——————————————————————————————————————————— Drain current ID ±2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW < 100 µs, duty cycle < 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7 mm). *** Marking is "NY". 1

2SJ317 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –12 — — V ID = –1 mA, voltage VGS = 0 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±7 — — V IG = ±10 µA, voltage VDS = 0 ——————————————————————————————————————————— Gate to source cutoff current IGSS — — ±5 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –8 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.4 — –1.4 V ID = –100 µA, VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 0.4 0.7 Ω ID = –0.5 A* resistance VGS = –2.2 V ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 0.28 0.35 Ω ID = –1 A*, resistance VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 2.3 — S ID = –1 A*, VDS = –5 V ——————————————————————————————————————————— Input capcitance Ciss — 63 — pF VDS = –5 V, ————————————————————————————————— VGS = 0, Output capacitance Coss — 180 — pF f = 1 MHz ————————————————————————————————— Reverse transfer capacitance Crss — 23 — pF ——————————————————————————————————————————— Turn–on time ton — 500 — ns ID = –0.2 A*, ————————————————————————————————— Vin = –4 V, Turn–off delay time toff — 2860 — ns RL = 51 Ω ——————————————————————————————————————————— * Pulse test 2

2SJ317 Maximun Power Dissipation Curve Maximun Safe Operation Area 2.0 –10 Channel Power Dissipation Pch (W) Operation in this Area PW = 1 ms is limited by RDS(on) 1 shot (on the aluminam ceramic board) –3 I D (A) 1.5 D C O –1 (T pe c= ra 25 tio Drain Current °C n 1.0 –0.3 ) –0.1 0.5 –0.03 Ta = 25°C –0.01 0 50 100 150 200 –0.1 –0.3 –1.0 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Forward Transfer Characteristics –5 –5 –5 –4 –2.5 Ta = –25°C –3 –4 –4 I D (A) I D (A) Pulse test 25°C 75°C –3 –3 –2 Drain Current Drain Current –2 –2 –1.5 –1 –1 VDS = –5 V VGS = –1 V Pulse test 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ317 Forward Transfer Admittance vs. Drain to Source on State Resistance Drain Current vs. Drain Current 20 10 Forward Transfer Admittance |y fs | (S) Drain to Source On State Resistance R DS(on) ( Ω ) VDS = –5 V Pulse test 10 Pulse test 5 5 Ta = –25°C 2 VGS = –2 V 2 25°C 1 75°C –3 V 1 0.5 0.5 –4 V 0.2 0.2 0.1 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Drain Current I D (A) Drain Current I D (A) Drain to Source Saturation Voltage Drain to Source on State Resintance vs. Gate to Source Voltage vs. Case Temperature –0.5 1.0 Drain to Source on State Resistance Pulse test Pulse test Drain to Source Saturation Voltage R DS(on) ( Ω ) V DS(on) (V) –0.4 0.8 I D = –2 A I D = –1 A –1 A –0.3 0.6 –0.5 A VGS = –2.5 V –0.2 –0.5 A 0.4 –0.1 A I D = –2 A –1 A, –0.5A –0.1 –0.2 A 0.2 VGS = –4 V 0 0 –1 –2 –3 –4 –5 –25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc (°C) 4

2SJ317 Reverse Recovery Time vs. Switching Time vs. Drain Current Reverse Drain Current 2000 2000 tf 1000 1000 Reverse Recovery Time trr (ns) td(off) t (ns) 500 500 tr Switching Time 200 VGS = –4 V 200 V DD = –10 V 100 PW = 5 µs Duty cycle = 1 % td(on) di/dt = –10 A/µs 100 50 V GS = 0 50 20 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Drain Current I D (A) Reverse Drain Current I DR (A) Typical Capacitance vs. Dynamic Input Characteristics Drain to Source Voltage –25 –10 V DD = –10 V 1000 Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) I D = –2 A VGS = 0 –20 Pulse test –8 500 f = 1 MHz C (pF) Coss VGS –15 –6 200 Typical Capacitance 100 –10 –4 50 Ciss –5 –2 20 Crss VDS 0 10 0 2 4 6 8 10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Gate Charge Qg (nc) Drain to Source Voltage V DS (V) 5

2SJ317 Reverse Drain Current vs. Source to Drain Voltage –4 Pulse test I DR (A) –3 VGS = –4 V Reverse Drain Current –2 VGS = 0 V –1 –2.5 V 0 –0.5 –1.0 –1.5 –2.0 Source to Drain Voltage V SD (V) 6

2SJ318 L , 2SJ318 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 • Low on–resistance 3 • High speed switching 2, 4 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ318 L , 2SJ318 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.09 0.13 Ω ID = –3 A resistance VGS = –10 V * ———————————————————————— — 0.14 0.19 Ω ID = –3 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 580 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 520 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 215 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –3 A ———————————————————————————————— Rise time tr — 60 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 75 — ns RL = 3.3 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 65 — µs IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ318 L , 2SJ318 S Power vs. Temperature Derating Maximum Safe Oeparation Area 20 –30 10 µs 100 µs Pch (W) PW 1m –10 DC s = (A) Op 10 15 er m at s( ion 1s (T ho ID –3 c= t) Channel Dissipation 25 °C 10 Operation in this area ) Drain Current –1 is limited by R DS(on) 5 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.3 –1 –3 –10 –30 Case Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Charactristics –10V Typical Transfer Characteristics –10 –10 –5 V Pulse Test –4 V VDS = –10 V –8 –3.5 V –8 Drain Current I D (A) Pulse Test Drain Current I D (A) –6 –6 –4 –3 V –4 75 °C –2 –2 VGS = –2.5 V Tc = –25 °C 25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gain to Source Voltage V GS (V) 3

2SJ318 L , 2SJ318 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 0.5 Static Drain to Source State Resistance R DS(on) (Ω) Pusle Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 0.2 V GS = –4 V –0.6 0.1 V GS= –10 V I D = –5 A –0.4 0.05 –2 A –0.2 0.02 –1 A 0.01 0 –4 –8 –12 –16 –20 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 Gain to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Foeward Transfer Admittance vs. vs. Temperature Drain Current 0.4 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Pulse Test V DS = –10 V 0.32 10 Pulse Test Resistance R DS(on) (Ω) I D = –5 A 5 0.24 –2 A Tc = 75 °C 0.16 –1 A 25 °C 2 VGS = –4 V –5 A –25 °C –2 A 0.08 1 VGS = –10 V –1 A 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ318 L , 2SJ318 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage Body–Drain Diode Reverse Recovery Time t rr (ns) 200 2000 1000 100 Ciss Capacitance C (pF) 500 Coss 200 50 Crss 100 di / dt = 20 A / µs 50 20 V GS = 0 Ta = 25 °C 20 VGS = 0 f = 1MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –10 V Drain to Source Voltage V DS (V) V DD = –5 V Gate to Source Voltage VGS (V) PW = 2 µs, duty < 1 % –10 V –10 –4 200 –20 V Switching Time t (ns) I D = –5 A 100 tf –20 V GS –8 V DS 50 t d(off) V DD = –5 V –30 –12 –10 V tr –20 V 20 –40 –16 t d(on) 10 –50 –20 5 0 8 16 24 32 40 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ318 L , 2SJ318 S Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) –8 –10 V Pulse Test –6 –5 V –4 –2 VGS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Forward Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ318 L , 2SJ318 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = –10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ319 L , 2SJ319 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 • No secondary breakdown 3 • Suitable for Switching regulator, DC – DC 1 1. Gate converter 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ319 L , 2SJ319 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –200 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.7 2.3 Ω ID = –2 A resistance VGS = –10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.7 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 330 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 130 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 25 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –2 A ———————————————————————————————— Rise time tr — 30 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 40 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.15 — V IF = –3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 180 — µs IF = –3 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ319 L , 2SJ319 S Power vs. Temperature Derating Maximum Safe Operation Area 20 –50 –30 Pch (W) I D (A) 15 –10 1 10 0 µs 0 PW µs –3 1 Channel Dissipation Drain Current DC = m 10 s 10 O –1 pe m ra s tio (1 n sh Operation in (T ot –0.3 c = ) 5 this area is 25 limited by R DS(on) °C ) –0.1 Ta = 25 °C –0.05 0 50 100 150 200 –1 –3 –10 –30 –100 –300 –500 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –5 –5 –10 V –8 V –6 V 25 °C Tc = –25 °C –4 Pulse Test –4 (A) I D (A) 75 °C ID –3 –3 –5 V Drain Current Drain Current –2 –2 –1 –4 V –1 V DS = –10 V VGS = –3.5 V Pulse Test 0 –4 –8 –12 –16 –20 0 –2 –4 –6 –8 –10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ319 L , 2SJ319 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –20 10 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 5 VGS = –10 V –16 Pulse Test 2 –12 I D = –5 A 1 –8 0.5 –2 A –4 0.2 –1 A 0.1 0 –4 –8 12 –16 –20 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 5 3 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) 2 Tc = –25 °C 4 1 –2 A 3 I D = –5 A 25 °C 0.5 –1 A 75 °C 2 1 VGS = –10 V 0.2 V DS = –10 V Pulse Test Pulse Test 0 0.1 –40 0 40 80 120 160 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ319 L , 2SJ319 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) 500 Ciss Capacitance C (pF) 200 200 100 100 Coss 50 50 VGS = 0 20 20 f = 1 MHz di/dt = 50 A/µs, VGS = 0 10 duty < 1 %, Ta = 25 °C 10 Crss 5 5 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –50 V V GS = –10 V, V DD = –30 V –100 V duty < 1 %, PW = 2 µs –100 –150 V –4 200 Switching Time t (ns) V DS Gate to Source Voltage Drain to Source Voltage V DD = –50 V 100 –200 –8 –100 V t d(off) –150 V 50 –300 –12 tf 20 tr V GS t d(on) –400 –16 ID = –3A 10 –500 –20 5 0 4 8 12 16 20 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ319 L , 2SJ319 S Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –2 –10 V –1 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ319 L , 2SJ319 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ321 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ321 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.12 Ω ID = –8 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ290 2

2SJ321 Maximum Safe Operation Area Power vs. Temperature Derating –100 10µs 45 10 –30 Channel Dissipation Pch (W) 0µ is s n) ea PW 1 m I D (A) (o ar s = D S is –10 10 R th 30 DC m by in s O d on (1 pe ite rati sh ra lim pe tio ot –3 ) Drain Current n O (T c = 25 15 Ta = 25°C °C –1 ) –0.3 0 50 100 150 –0.1 Case Temperature Tc (°C) –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) 3

2SJ322 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 1 • Low drive current 2 3 • 4 V gate drive device can be driven from 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Avalanche current IAP*** –20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ322 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ———————————————————————— — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ291. 2

2SJ322 Power vs. Temperature Derating Maximum Safe Operation Area 40 –200 –100 Pch (W) 10 I D (A) –50 µs 30 10 0µ –20 PW 1m s =1 s –10 Channel Dissipation Drain Current 0m DC s( 20 –5 Op 1s era ho Operation in tio t) n( –2 this area is Tc limited by R DS(on) =2 10 –1 5° C) –0.5 –0.2 Ta = 25 °C 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 3.57 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 0.0 1 lse PW pu h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SJ323 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 1 2 23 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ323 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ280. 2

2SJ323 Power vs. Temperature Derating Maximum Safe Operation Area 60 –500 –300 Channel Dissipation Pch (W) –100 Drain Current I D ( A ) 10 (o rea µs n) 10 a 40 y R this 0 µs PW DS –30 1 d b in D m ite on s = C lim ati 10 O is per –10 pe m O ra s (1 20 tio –3 n sh (T o t) c = Ta = 25 °C 25 –1 °C ) –0.5 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage VDS ( V ) Case Temperature Tc (°C) 3

2SJ332 L , 2SJ332 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V Gate drive device can be driven from 5 V Source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ332 L , 2SJ332 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.08 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.14 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 6 9 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 730 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 260 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = –5 A ———————————————————————————————— Rise time tr — 110 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 90 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 110 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 50 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ332 L , 2SJ332 S Power vs. Temperature Derating Maximum Safe Operation Area 20 –100 10 µs 100 µs Pch (W) –30 I D (A) 15 1 m –10 s d is D on ite Th Channel Dissipation Drain Current (T .C D Lim in 10 –3 c Op R is ion = 25 era by rea rat ) A pe °C tio S( O –1 ) n 5 –0.3 PW = 10 ms (1shot) Ta = 25 °C –0.1 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Tranfer Characteristics –20 –20 –10 V Pulse Test –6 V V DS = –10 V –16 –3.5 V –16 (A) I D (A) –4 V Pulse Test ID –12 –12 Drain Current Drain Current –3 V –8 –8 75 °C VGS = –2.5 V Tc = 25 °C –4 –4 –25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ332 L , 2SJ332 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 –0.8 I D = –10 A 0.2 –0.6 Drain to Source Voltage VGS = –4 V 0.1 –0.4 –10 V –5 A 0.05 –0.2 –2 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.20 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 I D = –10 A 20 –5 A –25 °C 10 Tc = 25 °C 0.12 V GS = –4 V –2 A 5 75 °C 0.08 –10 A 2 0.04 –5 A V GS = –10 V –2 A 1 V DS = –10 V Pulse Test 0 0.5 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ332 L , 2SJ332 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 1000 Ciss Coss 50 Crss di / dt = 20 A / µs 100 20 VGS = 0, Pulse Test 10 VGS = 0 f = 1 MHz 5 10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DD = –5 V V GS = –10 V, V DD = –10 V V DS (V) –10 V tf PW = 2 µs, duty < 1 % –10 –20 V –4 200 Switching Time t (ns) V DS 100 Gate to Source Voltage Drain to Source Voltage –20 V DD = –5 V –8 t d(off) –10 V tr –20 V 50 –30 –12 V GS 20 t d(on) –40 –16 10 I D = –10 A –50 –20 5 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ332 L , 2SJ332 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –10 V –8 –5 V –4 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –20 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e PW 0.0 1 Puls PDM D= ot T 0.03 h 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ332 L , 2SJ332 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ333 L , 2SJ333 S Silicon P-Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V Gate drive device can be driven from 5 V 1 Source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ333 L , 2SJ333 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.14 Ω ID = –4 A resistance VGS = –10 V * ———————————————————————— — 0.15 0.22 Ω ID = –4 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 6 — S ID = –4 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 755 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 495 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 210 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = –4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 120 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — µs IF = –7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ333 L , 2SJ333 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 100 µs Pch (W) 10 µs –30 I D (A) 30 1 P ms DC –10 Op 10 W = era ms Channel Dissipation Drain Current tio (1s n( ho 20 –3 Tc t) Operation in this =2 area is limited 5° C) –1 by R DS(on) 10 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.5 –1 –2 5 –10 –20 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –10 V Pulse Test –5 V Tc = 25 °C –4.5 V –3.5 V –8 –8 I D (A) –4 V (A) –25 °C 75 °C ID –6 –6 Drain Current –3 V Drain Current –4 V DS = –10 V –4 Pulse Test –2 –2.5 V –2 VGS = –2 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ333 L , 2SJ333 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Pulse Test –0.8 2 1 –0.6 I D = –5 A 0.5 –0.4 0.2 VGS = –4 V –2 A –0.2 –10 V 0.1 –1 A 0.05 0 –4 –8 12 –16 –20 –0.1 –0.3 –1 –3 –10 –30 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.40 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = –10 V 0.32 20 Pulse Test –2 A 10 –25 °C I D = –5 A 0.24 5 Tc = 25 °C V GS = –4 V –1 A 0.16 75 °C 2 I D = –1 A 0.08 –2 A V GS = –10 V 1 –5 A 0 0.5 –40 0 40 80 120 160 –10 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ333 L , 2SJ333 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz Capacitance C (pF) 200 3000 100 50 1000 Ciss Coss 20 300 10 di / dt = 50 A / µs Crss VGS = 0, Ta = 25 °C 5 100 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –25 V –10 V PW = 5 µs, duty < 1 % –20 –4 200 t d(off) Switching Time t (ns) V DS V DD = –25 V 100 tf Gate to Source Voltage Drain to Source Voltage –10 V –40 –8 50 tr –60 V GS –12 I D = –7 A 20 t d(on) –80 –16 10 –100 –20 5 0 –8 –16 –24 –32 –40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ333 L , 2SJ333 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –10 V –5 V –8 –4 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ333 L , 2SJ333 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ350 Silicon P-Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –120 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –6 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –6 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ350 Power vs. Temperature Derating Maximum Safe Operation Area 40 –20 10 µs 10 –10 Pch (W) 0 1 µs I D (A) PW m 30 –5 = s DC 10 O m pe s (1 Channel Dissipation sh Drain Current –2 ra Operation in tio ot 20 n ) –1 this area is (T limited by R DS(on) c = 25 –0.5 °C 10 ) –0.2 Ta = 25 °C –0.1 0 50 100 150 200 –2 –5 –10 –20 –50 –100 –200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –10 V –4 V –6 V –3.5 V Tc = –25 °C –8 –8 I D (A) (A) 25 °C 75 °C ID –6 –6 Drain Current Drain Current –3 V –4 –4 VGS = –2.5 V –2 –2 V DS = –10 V Pulse Test Pulse Test 0 –4 –8 –12 –16 –20 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ350 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 5000 Reverse Recovery Time trr (ns) 500 2000 Capacitance C (pF) Ciss 1000 200 500 100 Coss 200 100 50 50 Crss 20 di / dt = 50 A / µs, V GS = 0 VGS = 0 20 Ta = 25 °C, Pulse Test f = 1 MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –25 V –50 V PW = 2 µs, duty < 1 % –40 –80 V –4 200 Switching Time t (ns) I D = –6 A t d(off) 100 Gate to Source Voltage Drain to Source Voltage –80 –8 V DS tf V DD = –25 V 50 –50 V –120 –80 V –12 tr 20 t d(on) –160 V GS –16 10 –200 –20 5 0 20 40 60 80 100 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ350 Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ351, 2SJ352 Silicon P-Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SK2220 2SK2221 Features • High power gain • Excellent frequency response 3 • High speed switching • Wide area of safe operation • Enhancement–mode 1 1. Gate • Good complementary characteristics 1 2. Source • Equipped with gate protection diodes 2 3. Drain 3 Table 1 Ordering Information 2 Type No. VDSS ———————————————————— 2SJ351 –180 V ———————————————————— 2SJ352 –200 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SJ351 VDSX –180 V ———— ——— 2SJ352 –200 ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –8 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –8 A ——————————————————————————————————————————— Channel dissipation Pch* 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * Value at Tc = 25 °C 1

2SJ351, 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SJ351 V(BR)DSX –180 — — V ID = –10 mA, VGS = 10 V breakdown voltage ———— —————————— 2SJ352 –200 — — ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V ID = –100 mA VDS = –10 V ——————————————————————————————————————————— Drain to source saturation VDS(sat) — — –12 V ID = –8 A, VGD = 0 V* voltage ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 800 — pF VGS = 5 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VDS = –10 V ———————————————————————————————— Reverse transfer capacitance Crss — 18 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 320 — ns VDD = –30 V ———————————————————————————————— Turn–off time toff — 120 — ns ID = –4 A ——————————————————————————————————————————— * Pulse Test 2

2SJ351, 2SJ352 Power vs. Temperature Derating Maximum Safe Operation Area 160 –20 Ta = 25°C IDmax (Continuous) Pch (W) –10 PW = 120 PW Drain Current ID (A) = 00 –5 10 m 1 m s1 s D PW era 1 Sh C Channel Dissipation Sh ot O = on p ot 1 s TC 80 –2 ti 1 Sh 25 ( ot = –1.0 °C ) 40 –0.5 2SJ351 2SJ352 –0.2 0 50 100 150 200 –5 –10 –20 –50 –100 –200 –500 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Output Characteristics –10 –10 –9 0V TC = 25°C TC = 25°C VGS = –10 V –9 = –1 –8 –8 –8 –8 S Drain Current ID (A) Drain Current ID (A) VG –7 –7 –6 –6 –6 Pc –6 h= –5 12 5W –5 –4 –4 –4 –4 –3 –3 –2 –2 –2 –2 –1 –1 0 0 –10 –20 –30 –40 –50 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) 3

2SJ351, 2SJ352 Typical Transfer Characteristics Typical Transfer Characteristics –10 –1.0 VDS = –10 V VDS = –10 V –8 –0.8 °C °C 25 25 Drain Current ID (A) Drain Current ID (A) 25 =– =– 25 75 C C –6 –0.6 T T 75 –4 –0.4 –2 –0.2 0 –2 –4 –6 –8 –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Forward Transfer Admittance vs. Frequency Switching Time vs. Drain Current 5 500 Forward Transfer Admittance yfs (S) ton Switching Time ton, toff (ns) 1.0 200 100 toff 100 m 50 TC = 25°C 10 m VDS = –10 V 20 ID = –2 A 10 1m 0.5 m 5 2k 10 k 100 k 1M 10 M 20 M –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Frequency f (Hz) Drain Current ID (A) 4

2SJ351, 2SJ352 Switching Time Test Circuit Waveforms Output 10% 2Ω Input Input 90% ton toff –30 V 90% PW = 50 µs duty ratio 50 Ω = 1% Output 10% 5

2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 2 Features 3 • Low on–resistance 4 • High speed switching 2, 4 • Low drive current 1. Gate • 2.5 V gate drive device can be driven from 2. Drain 3 V source 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is “RY”. 1

2SJ361 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.28 0.4 Ω ID = –1 A resistance VGS = –10 V ———————————————————————— — 0.85 1.5 Ω ID = –0.4 A VGS = –2.5 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.15 0.3 — S ID = –10 A VDS = –10 V ——————————————————————————————————————————— Input capacitance Ciss — 3.2 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 130 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.6 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 350 — ns ID = –1 A ———————————————————————————————— Rise time tr — 1650 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 7280 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 6950 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –2 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 530 — µs IF = –2 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ361 Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –10 Pch** (W) 10 10 µs –3 I D (A) 0 PW 1 µs 1.5 m = s –1 10 m D s Channel Dissipation Drain Current (T C O (1 1.0 –0.3 c sh = pe ot 25 rat ) Operation in °C ion –0.1 this area is ) limited by R DS(on) 0.5 –0.03 Ta = 25 °C –0.01 0 50 100 150 200 –0.05 –0.1 –0.3 –1 –3 –10 –30 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Transfer Characteristics Typical Output Characteristics –2.0 –5 –10 V –5 V –3.5 V V DS = –10 V –1.6 (A) –4 I D (A) –4 V Pulse Test Pulse Test ID –3 –3 V –1.2 Drain Current Drain Current –2 –0.8 75 °C –2.5 V Tc = –25 °C 25 °C –1 –0.4 –2 V VGS = –1.5 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ361 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 3 Pulse Test –0.4 I D = –1 A –0.3 1 –2.5 V –4 V –0.2 –0.5 A VGS = –10 V 0.3 –0.1 –0.2 A 0.1 0 –2 –4 –6 –8 –10 –0.1 –0.3 –1 –3 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 1 Static Drain to Source on State Resistance 2.0 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 1.6 Tc = –25 °C 0.3 –1 A 25 °C VGS = –2.5 V –0.5 A 1.2 –0.2 A 75 °C 0.1 0.8 –0.5 A –1 A –0.2 A –4 V –1 A 0.3 V DS = –10 V 0.4 –0.5 A Pulse Test I D = –0.2 A 0 –10 V 0.01 –40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ361 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 3000 500 300 Coss Reverse Recovery Time trr (ns) 100 Capacitance C (pF) di/dt = 20 A/µs VGS = 0, Ta = 25 °C VGS = 0 1000 30 f = 1 MHz 10 Ciss 3 300 1 Crss 0.3 100 0.1 –0.1 –0.3 –1 –3 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 20 t d(off) V GS (V) V DS (V) 10 V DS tf Switching Time t (µs) –20 –4 V DD = –10 V –20 V 3 Gate to Source Voltage Drain to Source Voltage –40 –8 tr I D = –2 A VGS = –10 V 1 VDD = –10 V –60 –12 PW = 30 µs V DD = –10 V t d(on) duty < 1 % V GS –20 V 0.3 –80 –16 –100 –20 0.1 0 0.4 0.8 1.2 1.6 2.0 –0.1 –0.3 –1 –3 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ361 Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –10 V –5 V –2 –2.5 V –1 V GS = 0, 5 V 0 –0.2 –0.4 –0.6 –0.8 –1.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 10 V Vout 10% 10% td(on) tr td(off) tf 6

2SJ363 Silicon P Channel MOS FET Application UPAK Low frequency power switching 1 32 Features 4 • Low on–resistance • Low drive current D • 4 V gate drive device can be driven from 5 V source 1. Gate G 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is “PY”. 1

2SJ363 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –24 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID=–100 µA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.6 0.75 Ω ID = –1 A resistance VGS = –4 V * ———————————————————————— — 0.35 0.45 Ω ID = –1 A VGS = –10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.4 2.0 — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2.1 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 100 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.25 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 1.65 — µs ID = –1 A ———————————————————————————————— Rise time tr — 8 — µs VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 25.9 — µs RL = 30 Ω ———————————————————————————————— Fall time tf — 14.9 — µs ——————————————————————————————————————————— 2

2SJ363 Maximum Channel Power Dissipation Curve Maximum Safe Operation Area –10 2.0 Pch (W) 100 µs –3 I D (A) 1 PW 10 m s 1.5 = s –1 m DC Channel Power Dissipation O Drain Current pe –0.3 ra 1.0 tio n –0.1 Operation in this area is 0.5 limited by R DS(on) –0.03 Ta = 25 °C –0.01 0 –0.1 –0.3 –1 –3 –10 –30 –100 50 100 150 200 Drain to Source Voltage V DS (V) Ambient Temperature Ta (°C) Typical Output Characteristics –4.5 V –4 V Typical Transfer Characteristics –5 –2.0 V .5 –3 V Pulse Test –4 (A) –1.6 –3 I D (A) Ta = –25 °C 25 °C ID –3 –1.2 75 °C Drain Current Drain Current V –2.5 –0.8 –2 V DS = –10 V –0.4 –1 –2 V V GS = –1.5 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ363 Static Drain to Source on State Resistance Drain to Source Saturation Voltage vs. vs. Drain Current Gate to Source Voltage 10 –1.0 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage Pulse Test V DS(on) (V) 3 –0.8 1 –2 A VGS = –4 V –0.6 0.3 –10 V –0.4 0.1 -1 A –0.2 I D = –0.5 A 0.03 0.01 0 –0.01 –0.03 –0.1 –0.3 –1 –3 –10 –4 –8 –12 –16 –20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 2.0 10 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 5 1.6 Tc = –25 °C 2 1.2 –1 A –0.5 A 1 75 °C I D = –2 A 25 °C 0.8 VGS = –4 V 0.5 0.4 V DS = –10 V I D = –2 A 0.2 –1 A Pulse Test VGS = –10 V 0 –0.5 A 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ363 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 500 100 200 VGS = 0 50 100 Coss t d(off) Switching Time t (µs) f = 1 MHz Capacitance C (pF) 50 20 tf 20 10 10 5 tr Ciss 5 2 V GS = –10 V 1 PW = 50 µs, duty < 1 % 0.5 Crss 2 t d(on) 0.2 0.1 1 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –10 –20 –30 –40 –50 Drain Current I D (A) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –10 V –2 –5 V –1 V GS = 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5

2SJ384 L , 2SJ384 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 2 • High speed switching 2, 4 3 • Low drive current • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ384 L , 2SJ384 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.07 0.01 Ω ID = –8 A resistance VGS = –10 V * ————————————————————————– — 0.12 0.19 Ω ID = –3 A VGS = –2.5 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 8 14 — S ID = –8 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 2170 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 830 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 130 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 16 — ns ID = –8 A ———————————————————————————————— Rise time tr — 75 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 360 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 180 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.0 — V IF = –15 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 130 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test 2

2SJ384 L , 2SJ384 S Power vs. Temperature Derating Maximum Safe Operation Area 80 –200 –100 10 µs Pch (W) I D (A) –50 60 10 –20 0µ s PW 1m Channel Dissipation –10 Drain Current DC =1 Op 0m s 40 –5 era s( Operation in tio 1s n( ho –2 this area is Tc t) =2 limited by R DS(on) 5° 20 –1 C) –0.5 Ta = 25 °C –0.2 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –20 –10 V Pulse Test V DS = –10 V –4 V Pulse Test –16 –3 V –16 I D (A) (A) –2.5 V ID –12 –12 Drain Current Drain Current –8 –8 –2 V Tc = –25 °C –4 –4 25 °C VGS = –1.5 V 75 °C 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ384 L , 2SJ384 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test V DS(on) (V) g 0.5 –0.8 I D = –10 A 0.2 VGS = –2.5 V –0.6 –4 V 0.1 –0.4 –5 A 0.05 –10 V –0.2 –2 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test Tc = –25 °C 0.4 20 25 °C 10 0.3 I D = –10 A –2 A –5 A 5 75 °C VGS = –2.5 V 0.2 2 0.1 1 –2, –5, –10 A V DS = –10 V –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ384 L , 2SJ384 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 Ciss Capacitance C (pF) 200 1000 100 Coss 50 300 100 Crss 20 10 30 VGS = 0 di / dt = 50 A / µs VGS = 0, Ta = 25 °C f = 1 MHz 5 10 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) V DS 200 Gate to Source Voltage Drain to Source Voltage tf –40 –8 V GS 100 –60 V DD = –50 V –12 –25 V 50 tr –10 V –80 –16 20 t d(on) I D = –15 A 10 –100 –20 0 20 40 60 80 100 –0.05 –0.1 –0.3 –1 –3 –10 –30 –50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ384 L , 2SJ384 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 20 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –15 A Reverse Drain Current I DR (A) –16 16 V DD = –25 V duty < 0.1 % Rg > 50 Ω –10 V –12 12 V GS = 0, 5 V –5 V –8 8 –4 4 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ384 L , 2SJ384 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 2.5 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features 32 • Low on–resistance 1 • High speed switching D • Low drive current • 4 V gate drive device can be driven from 1. Gate G 5 V source 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –5 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3 A ——————————————————————————————————————————— Channel dissipation Pch 0.9 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % 1

2SJ386 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –24 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.55 0.8 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.7 — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 177 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 120 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 59 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = –2 A ———————————————————————————————— Rise time tr — 28 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 45 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— 2

2SJ386 Maximum Channel Dissipation Curve Maximum Safe Operation Area 1.6 –10 Pch (W) 100 µs –3 PW I D (A) 1 m 1.2 s = 10 Channel Power Dissipation –1 m s Drain Current 0.8 –0.3 D C O pe Operation in ra –0.1 tio this area is n 0.4 limited by R DS(on) –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –2.0 –5 –5 V –4 V V DS = –10 V –3.5 V –3 V Pulse Test –1.6 –4 I D (A) (A) Ta = 25 °C Pulse Test Ta = –25 °C ID –1.2 –3 25 °C Drain Current Drain Current –2.5 V 75 °C –0.8 –2 –0.4 –1 VGS = –2 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ386 Static Drain to Source on State Resistance Drain to Source Saturation Voltage vs. vs. Drain Current Gate to Source Voltage 10 –5 Drain to Source On State Resistance R DS(on) ( Ω ) Ta = 25 °C Drain to Source Saturation Voltage V DS(on) (V) Ta = 25 °C 5 Pulse Test Pulse Test –4 2 –3 1 VGS = –4 V –2 0.5 I D = –5 A –10 V –1 –3 A 0.2 –1 A 0.1 0 –4 –8 –12 –16 –20 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 1.0 10 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) I D = –3 A 5 0.8 Ta = –25 °C V GS = –4 V –1 A 2 0.6 25 °C I D = –5 A 1 75 °C 0.4 0.5 –3 A –1 A VGS = –10 V 0.2 0.2 V DS = –10 V Pulse Test 0 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Ambient Temperature Ta (°C) Drain Current I D (A) 4

2SJ386 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 1000 0 0 V GS (V) V DS (V) V DD = –30 V 500 –20 V I D = –3 A –10 –10 V –4 Capacitance C (pF) 200 Gate to Source Voltage Drain to Source Voltage Ciss –20 –8 100 Coss V DD = –30 V –30 –20 V –12 50 Crss V DS –10 V –40 V GS –16 20 VGS = 0 f = 1 MHz 10 –50 –20 0 –10 –20 –30 –40 –50 0 4 8 12 16 20 Gate Charge Qg (nc) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Switching Characteristics Source to Drain Voltage 200 –5 100 Pulse Test Reverse Drain Current I DR (A) tf Switching Time t (ns) –4 50 t d(off) –3 20 –10 V tr t d(on) –5 V 10 –2 V GS = 0 5 V GS = –10 V, V DD = –30 V –1 PW = 2 µs, duty < 1 % 2 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –0.4 –0.8 –1.2 –1.6 –2.0 Drain Current I D (A) Source to Drain Voltage V SD (V) 5

2SJ387 L , 2SJ387 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • Low drive current 2, 4 • 2.5 V Gate drive device can be driven from 3 V 12 3 Source • Suitable for Switching regulator, DC – DC 1 1. Gate converter 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ387 L , 2SJ387 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.07 Ω ID = –5 A resistance VGS = –4 V * ———————————————————————— — 0.07 0.1 Ω ID = –5 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1170 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 860 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 310 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –5 A ———————————————————————————————— Rise time tr — 325 — ns VGS = –4 V ———————————————————————————————— Turn–off delay time td(off) — 350 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 425 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 240 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ387 L , 2SJ387 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 10 µs Pch (W) –30 I D (A) 100 µs 30 PW 1m –10 =1 s DC Op 0m Channel Dissipation Drain Current era s( tio 1s 20 –3 n( ho Operation in Tc t) this area is =2 5° –1 limited by R DS(on) C) 10 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.5 –1 –2 –5 –10 –20 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V Pulse Test –16 –2.5 V –8 I D (A) (A) –5 V –4 V ID –12 –6 Drain Current Drain Current –2 V –8 –4 Tc = –25 °C –4 –2 VGS = –1.5 V 25 °C 75 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ387 L , 2SJ387 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 0.1 VGS = –2.5 V I D = –5 A –0.2 0.05 –4 V –0.1 –2 A 0.02 –1 A 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.2 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 Tc = –25 °C 10 25 °C 0.12 I D = –5 A 5 VGS = –2.5 V 75 °C 0.08 –1, –2 A 2 –5 A 0.04 –1 A –2 A 1 –4 V V DS = –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ387 L , 2SJ387 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 5000 Capacitance C (pF) 200 2000 Ciss 100 1000 Coss 50 500 20 200 Crss di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 100 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 t d(off) V GS (V) V DS (V) V DD = –5 V 500 –10 –10 V –4 tf Switching Time t (ns) –15 V V DS V DD = –15 V 200 Gate to Source Voltage Drain to Source Voltage –20 10 V –8 tr 5V 100 –30 V GS –12 50 V GS = –4 V, V DD = –10 V PW = 5 µs, duty < 1 % –40 –16 20 t d(on) I = –10 A –50 D –20 10 0 20 40 60 80 100 –0.1 –0.3 –1 –3 –10 –30 –100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ387 L , 2SJ387 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –5 V –3 V –12 V GS = 0, 5 V –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ387 L , 2SJ387 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% –4 V = 10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ388 L , 2SJ388 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 2.5 V Gate drive device can be driven from 3 V Source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ388 L , 2SJ388 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.06 0.08 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.12 0.2 Ω ID = –5 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 8 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 970 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 620 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 250 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –5 A ———————————————————————————————— Rise time tr — 65 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 250 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 240 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 85 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ388 L , 2SJ388 S Power vs. Temperature Derating 30 Pch (W) 20 Channel Dissipation 10 0 50 100 150 Case Temperature Tc (°C) 3

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source • Avalanche Ratings 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Avalanche current IAP*** –10 A ——————————————————————————————————————————— Avalanche energy EAR*** 8.5 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ389 L , 2SJ389 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.135 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.14 0.2 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 8 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 910 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 170 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –5 A ———————————————————————————————— Rise time tr — 85 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 220 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ389 L , 2SJ389 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –200 –100 Pch (W) I D (A) –50 10 30 µs 10 –20 0µ PW s 1m Channel Dissipation Drain Current –10 DC =1 s 20 Op 0m –5 era s( Operation in tio 1s n( ho Tc –2 this area is = 2 t) 10 limited by R DS(on) 5° –1 C) –0.5 Ta = 25 °C –0.2 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V –5 V –4 V Pulse Test –16 –8 I D (A) (A) –4.5 V ID –12 –3.5 V –6 Drain Current Drain Current –8 –4 –3 V 75 °C Tc = –25 °C –4 –2 VGS = –2.5 V 25 °C 0 –4 –8 –12 –16 –20 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ389 L , 2SJ389 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test -0.8 2 1 –0.6 I D = –5 A 0.5 -0.4 0.2 VGS = –4 V –2 A –0.2 –1 A 0.1 –10 V 0.05 0 –4 –8 12 –16 –20 –1 –2 –5 –10 –20 –50 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = –10 V Pulse Test 0.4 20 10 0.3 –2, –1 A Tc = –25 °C I D = –5 A 5 25 °C 0.2 V GS = –4 V 2 75 °C 0.1 –5, –2, –1 A –10 V 1 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ389 L , 2SJ389 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 Crss 50 100 20 300 di / dt = 50 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 100 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) I D = –10 A 200 Gate to Source Voltage Drain to Source Voltage –40 V DS –8 tf 100 V DD = –50 V –60 –12 50 –25 V –10 V tr –80 V GS –16 20 t d(on) –100 –20 10 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ389 L , 2SJ389 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 10 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –10 A Reverse Drain Current I DR (A) –16 8 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 6 V GS = –10 V –8 4 –5 V 0, 5 V -4 2 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ389 L , 2SJ389 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ390 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 • 4 V gate drive device can be driven from 2 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate • Avalanche Ratings 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Avalanche current IAP*** –10 A ——————————————————————————————————————————— Avalanche energy EAR*** 8.5 mJ ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ390 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.09 0.12 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.13 0.19 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5 9 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1060 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 520 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 190 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = –5 A ———————————————————————————————— Rise time tr — 65 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 175 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 110 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ390 Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 10 µs Pch (W) –30 I D (A) 10 30 0µ PW s –10 1m =1 s 0m Channel Dissipation Drain Current DC Op s( 20 –3 1s era ho Operation in n( tio t) –1 this area is Tc =2 limited by R DS(on) 5° 10 C) –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V –6 V Pulse Test –4 V V DS = –10 V –16 –8 Pulse Test I D (A) (A) ID –3.5 V –12 –6 Drain Current Drain Current –8 –4 –3 V 75 °C Tc = –25 °C –4 –2 VGS = –2.5 V 25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ390 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 2 1 –0.6 I D = –5 A 0.5 –0.4 0.2 VGS = –4 V –2 A -0.2 0.1 –1 A –10 V 0.05 0 –4 –8 –12 –16 –20 –0.1 -0.3 –1 –3 –10 –30 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = 10 V Pulse Test 0.4 20 10 Tc = –25 °C 0.3 –1, –2 A 25 °C 5 I D = –5 A 0.2 75 °C VGS = –4 V 2 –5 A 0.1 1 –1, –2 A –10 V 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ390 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz 500 3000 Capacitance C (pF) Ciss 1000 200 Coss 100 300 Crss 50 100 30 20 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 10 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 VGS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) 200 I D = –10 A Gate to Source Voltage Drain to Source Voltage –40 –8 tf 100 V DS –60 V DD = –10 V –12 –25 V 50 tr –50 V V GS –80 –16 20 t d(on) –100 –20 10 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ390 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 10 Repetive Avalanche Energy E AR (mJ) Pulse Test Reverse Drain Current I DR (A) I AP = –10 A –16 8 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 6 –5 V –8 4 –10 V V GS = 0, 5 V –4 2 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ390 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 e PW 0.0 1 puls h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor