CONTENTS s Index................................................................................................................................................... 4 s General Information.......................................................................................................................... 11 Section 1 Lineup by Application........................................................................................................ 13 1.1 Power Supply Use .................................................................................................................. 13 1.2 Motor Drive Use...................................................................................................................... 26 1.3 Servo Motor/Inverter Application ............................................................................................ 31 1.4 Automotive Use ...................................................................................................................... 33 1.5 Lamp Inverter Application....................................................................................................... 36 1.6 CRT Display Use .................................................................................................................... 37 Section 2 Series Lineup .................................................................................................................... 39 2.1 D Series Lineup...................................................................................................................... 39 2.2 S Series Lineup ...................................................................................................................... 41 2.3 Power MOS FET DII Series.................................................................................................... 43 2.4 Power MOS FET DIII Series................................................................................................... 44 2.5 Power MOS FET DIV Series .................................................................................................. 50 2.6 Power MOS FET DV Series.................................................................................................... 53 2.7 Power MOS FET Array Series................................................................................................ 54 2.8 Power MOS FET Modules ...................................................................................................... 57 2.9 Line-up of Each Package Outline for Same Die ..................................................................... 58 Section 6 Standard Lead Forming Specification............................................................................... 144 Section 7 Package Information ......................................................................................................... 149 1

When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 2

Index • S Series, D Series 2SJ384(L) .............................................. 366 2SJ234(L) .............................................. 213 2SJ384(S) .............................................. 366 2SJ234(S) .............................................. 213 2SJ386................................................... 373 2SJ244................................................... 220 2SJ387(L) .............................................. 378 2SJ245(L) .............................................. 226 2SJ387(S) .............................................. 378 2SJ245(S) .............................................. 226 2SJ388(L) .............................................. 385 2SJ246(L) .............................................. 233 2SJ388(S) .............................................. 385 2SJ246(S) .............................................. 233 2SJ389(L) .............................................. 388 2SJ247................................................... 240 2SJ389(S) .............................................. 388 2SJ248................................................... 247 2SJ390................................................... 395 2SJ278................................................... 250 2SJ399................................................... 402 2SJ279(L) .............................................. 256 2SJ408(L) .............................................. 407 2SJ279(S) .............................................. 256 2SJ408(S) .............................................. 407 2SJ280(L) .............................................. 263 2SJ409(L) .............................................. 414 2SJ280(S) .............................................. 263 2SJ409(S) .............................................. 414 2SJ291................................................... 278 2SJ410................................................... 417 2SJ292................................................... 285 2SJ443................................................... 420 2SJ293................................................... 287 2SJ450................................................... 422 2SJ294................................................... 290 2SJ451................................................... 425 2SJ295................................................... 293 2SJ452................................................... 428 2SJ296(L) .............................................. 296 2SJ296(S) .............................................. 296 2SK213 .................................................. 431 2SJ297(L) .............................................. 298 2SK214 .................................................. 431 2SJ297(S) .............................................. 298 2SK215 .................................................. 431 2SJ317................................................... 300 2SK216 .................................................. 431 2SJ318(L) .............................................. 306 2SK740 .................................................. 435 2SJ318(S) .............................................. 306 2SK741 .................................................. 442 2SJ319(L) .............................................. 313 2SK970 .................................................. 449 2SJ319(S) .............................................. 313 2SK971 .................................................. 456 2SJ321................................................... 320 2SK972 .................................................. 463 2SJ322................................................... 323 2SK973(L).............................................. 470 2SJ323................................................... 326 2SK973(S) ............................................. 470 2SJ332(L) .............................................. 329 2SK974(L).............................................. 477 2SJ332(S) .............................................. 329 2SK974(S) ............................................. 477 2SJ333(L) .............................................. 336 2SK975 .................................................. 484 2SJ333(S) .............................................. 336 2SK1056 ................................................ 490 2SJ350................................................... 343 2SK1057 ................................................ 490 2SJ351................................................... 350 2SK1058 ................................................ 490 2SJ352................................................... 350 2SK1093 ................................................ 495 2SJ361................................................... 355 2SK1094 ................................................ 498 2SJ363................................................... 361 2SK1095 ................................................ 501 1

INDEX 2SK1151(L)............................................ 504 2SK1316(S) ........................................... 644 2SK1151(S) ........................................... 504 2SK1317 ................................................ 647 2SK1152(L)............................................ 504 2SK1328 ................................................ 651 2SK1152(S) ........................................... 504 2SK1329 ................................................ 651 2SK1153 ................................................ 511 2SK1540(L)............................................ 731 2SK1154 ................................................ 511 2SK1540(S) ........................................... 731 2SK1155 ................................................ 518 2SK1541(L)............................................ 731 2SK1156 ................................................ 518 2SK1541(S) ........................................... 731 2SK1157 ................................................ 525 2SK1566 ................................................ 734 2SK1158 ................................................ 525 2SK1567 ................................................ 734 2SK1159 ................................................ 532 2SK1620(L)............................................ 750 2SK1160 ................................................ 532 2SK1620(S) ........................................... 750 2SK1161 ................................................ 539 2SK1621(L)............................................ 753 2SK1162 ................................................ 539 2SK1621(S) ........................................... 753 2SK1163 ................................................ 542 2SK1622(L)............................................ 756 2SK1164 ................................................ 542 2SK1622(S) ........................................... 756 2SK1165 ................................................ 545 2SK1626 ................................................ 763 2SK1166 ................................................ 545 2SK1627 ................................................ 763 2SK1167 ................................................ 552 2SK1648(L)............................................ 777 2SK1168 ................................................ 552 2SK1648(S) ........................................... 777 2SK1169 ................................................ 559 2SK1667 ................................................ 780 2SK1170 ................................................ 559 2SK1668 ................................................ 787 2SK1254(L)............................................ 566 2SK1697 ................................................ 800 2SK1254(S) ........................................... 566 2SK1698 ................................................ 803 2SK1296 ................................................ 573 2SK1761 ................................................ 806 2SK1297 ................................................ 580 2SK1762 ................................................ 813 2SK1298 ................................................ 587 2SK1764 ................................................ 816 2SK1299(L)............................................ 590 2SK1772 ................................................ 821 2SK1299(S) ........................................... 590 2SK1773 ................................................ 827 2SK1300 ................................................ 597 2SK1775 ................................................ 834 2SK1301 ................................................ 604 2SK1807 ................................................ 837 2SK1302 ................................................ 611 2SK1808 ................................................ 840 2SK1303 ................................................ 618 2SK1809 ................................................ 843 2SK1304 ................................................ 625 2SK1831 ................................................ 846 2SK1305 ................................................ 632 2SK1832 ................................................ 846 2SK1306 ................................................ 635 2SK1835 ................................................ 849 2SK1307 ................................................ 638 2SK1836 ................................................ 856 2SK1313(L)............................................ 641 2SK1837 ................................................ 856 2SK1313(S) ........................................... 641 2SK1838(L)............................................ 863 2SK1314(L)............................................ 641 2SK1838(S) ........................................... 863 2SK1314(S) ........................................... 641 2SK1859 ................................................ 869 2SK1315(L)............................................ 644 2SK1862 ................................................ 872 2SK1315(S) ........................................... 644 2SK1863 ................................................ 872 2SK1316(L)............................................ 644 2SK1869(L)............................................ 875 2

INDEX 2SK1869(S) ........................................... 875 2SK2204 (S) ..........................................1054 2SK1880(L)............................................ 877 2SK2205 ................................................1061 2SK1880(S) ........................................... 877 2SK2206 ................................................1064 2SK1910 ................................................ 883 2SK2212 ................................................1067 2SK1918(L)............................................ 897 2SK2220 ................................................1074 2SK1918(S) ........................................... 897 2SK2221 ................................................1074 2SK1919(L)............................................ 900 2SK2225 ................................................1079 2SK1919(S) ........................................... 900 2SK2247 ................................................1086 2SK1933 ................................................ 902 2SK2278(L)............................................1091 2SK1934 ................................................ 909 2SK2278(S) ...........................................1091 2SK1947 ................................................ 916 2SK2315 ................................................1094 2SK1948 ................................................ 923 2SK2322(L)............................................1099 2SK1949(L)............................................ 930 2SK2322(S) ...........................................1099 2SK1949(S) ........................................... 930 2SK2328 ................................................1106 2SK1950 ................................................ 937 2SK2329(L)............................................1109 2SK1951 ................................................ 940 2SK2329(S) ...........................................1109 2SK1952 ................................................ 943 2SK2330(L)............................................1116 2SK1957 ................................................ 946 2SK2330(S) ...........................................1116 2SK1968 ................................................ 953 2SK2334(L)............................................1118 2SK1971 ................................................ 960 2SK2334(S) ...........................................1118 2SK2008 ................................................ 974 2SK2345 ................................................1125 2SK2059 (L)........................................... 977 2SK2346 ................................................1128 2SK2059 (S) .......................................... 977 2SK2373 ................................................1135 2SK2075 ................................................ 982 2SK2390 ................................................1140 2SK2084(L)............................................ 989 2SK2393 ................................................1147 2SK2084(S) ........................................... 989 2SK2408 ................................................1153 2SK2085 ................................................ 996 2SK2418(L)............................................1156 2SK2096 ................................................1002 2SK2418(S) ...........................................1156 2SK2097 ................................................1006 2SK2423 ................................................1163 2SK2114 ................................................1009 2SK2424 ................................................1165 2SK2115 ................................................1009 2SK2425 ................................................1167 2SK2116 ................................................1012 2SK2426 ................................................1169 2SK2117 ................................................1012 2SK2431 ................................................1171 2SK2118 ................................................1015 2SK2529 ................................................1173 2SK2119 ................................................1018 2SK2553 ................................................1180 2SK2120 ................................................1021 2SK2554 ................................................1183 2SK2121 ................................................1024 2SK2568 ................................................1190 2SK2144 ................................................1031 2SK2569 ................................................1193 2SK2174(L)............................................1034 2SK2582 ................................................1196 2SK2174(S) ...........................................1034 2SK2586 ................................................1199 2SK2175 ................................................1037 2SK2590 ................................................1202 2SK2202 ................................................1044 2SK2591 ................................................1205 2SK2203 ................................................1051 2SK2204 (L)...........................................1054 3

INDEX • Power MOS FET SOP-8 Series • Power MOS FET Module HAT1001F ..............................................1211 PM4550J................................................1431 HAT1002F ..............................................1217 PM4575J................................................1438 HAT1004F ..............................................1223 PM45100K .............................................1445 HAT1005F ..............................................1229 PM45150K .............................................1452 HAT1006F ..............................................1235 PM5050J................................................1469 HAT1007F ..............................................1241 PM5075J................................................1476 HAT1008F ..............................................1247 PM50100K .............................................1483 HAT1009F ..............................................1253 PM50150K .............................................1490 HAT2001F ..............................................1259 HAT2002F ..............................................1265 HAT2003F ..............................................1271 HAT2004F ..............................................1277 HAT2005F ..............................................1283 HAT2006F ..............................................1286 HAT2007F ..............................................1292 HAT2008F ..............................................1298 HAT2009F ..............................................1304 HAT2010F ..............................................1310 HAT3001F ..............................................1316 HAT1020R..............................................1327 HAT1023R..............................................1330 HAT1024R..............................................1333 HAT1025R..............................................1336 HAT2016R..............................................1339 HAT2020R..............................................1342 HAT2022R..............................................1345 HAT3004R..............................................1348 • Power MOS FET Array 4AJ11.....................................................1355 4AK23 ....................................................1379 4AK25 ....................................................1382 4AK26 ....................................................1385 4AM14....................................................1397 4AM15....................................................1400 4AM16....................................................1404 6AM12....................................................1411 6AM13....................................................1414 6AM14....................................................1417 HAF2001................................................1421 4

Section 1 Lineup by Application 1.1 Power Supply Use 1. Recommended products in each power range Recommended Products in Each Power Range Input Type Voltage Up to 10 W 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W Switching 100 V to 2SK1151 (3.5) 2SK1153 (2.0) 2SK1155 (1.0) 2SK1159 (0.55) 2SK1163 (0.55) 2SK1169 (0.2) power 132 V AC 2SK1152 (4.0) 2SK1154 (2.2) 2SK1156 (1.2) 2SK1160 (0.6) 2SK1164 (0.6) 2SK1170 (0.22) supply 2SK1862 (2.0) 2SK1157 (0.6) 2SK1161 (0.6) 2SK1165 (0.4) 2SK1971 (0.19) 2SK1863 (2.2) 2SK1158 (0.7) 2SK1162 (0.7) 2SK1166 (0.45) 2SK1526 (0.11) 2SK1313 (1.0) 2SK1163 (0.55) 2SK1167 (0.25) 2SK1527 (0.12) 2SK1314 (1.2) 2SK1315 (0.55) 2SK1168 (0.3) 2SK1629 (0.22) 2SK1540 (0.6) 2SK1316 (0.60) 2SK1403A (1.0) 2SK1836 (0.08) 2SK1541 (0.7) 2SK1567 (0.6) 2SK1837 (0.085) 2SK1626 (1.0) 2SK1869 (0.6) 2SK2174 (0.22) 2SK1627 (1.2) 2SK2117 (0.6) 2SK1567 (0.7) 2SK2114 (1.0) 2SK2115 (1.2) 2SK2117 (0.6) 200 V to 2SK1880 (6.5) 2SK1338 (5) 2SK1339 (5) 2SK1340 (3) 2SK1342 (1.2) 2SK1342 (1.2) 264 V AC 2SK2059 (3.8) 2SK1402A (2.0) 2SK1341 (2) 2SK1968 (0.68) 2SK1573 (0.35) 2SK1572 (3.8) 2SK1624 (1.8) 2SK1528 (3) 2SK1573 (0.35) 2SK1770 (0.5) 2SK1618 (3.8) 2SK1637 (1.8) 2SK1625 (0.9) 2SK1773 (1.5) 2SK2144 (3.8) 2SK1404 (1.0) 2SK1809 (1.1) 2SK1933 (0.9) 2SK2097 (1.8) 2SK1934 (1.2) 2SK2118 (1.0) Notes: 1. : DIII Series : DIV Series 2. Package: : DPAK : TO-220AB : TO-220FM : TO-3P : TO-92M : TO-220CFM : UPAK : TO-3PFM : LDPAK : TO-3PL : HDPAK 3. Values in ( ) show typical “on” resistance RDS(ON) (Ω ) typ. 4. Withstand voltages Input Voltage Withstand Voltages Input Voltage Withstand Voltages AC 100 V to 132 V 300 V, 350 V, 450 V, 500 V DC 5 V to 12 V 30 V, 60 V 200 V to 264 V 600 V, 800 V, 900 V, 1000 V 24 V, 48 V 100 V, 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L and S indicating long and short leads on DPAK, LDPAK and HDPAK packages. 1

LINEUP BY APPLICATION Recommended Products in Each Power Range Input Type Voltage Up to 10 W 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W DC-DC 5 V to 2SJ278 (0.6) 2SJ333 (0.1) 2SJ220 (0.065) 2SJ280 (0.03) 2SK1296 (0.024) 2SK2586 (0.007) converter 12 V DC HAT1002F (0.06) 2SK1949 (0.12) 2SJ297 (0.055) 2SK1919 (0.018) 2SK1911 (0.018) 2SK2554 (0.005) * * HAT1005F (0.13) 2SJ214 (0.13) 2SK1918 (0.03) 2SK1952 (0.018) 2SK2096 (0.018) * HAT2002F (0.03) 2SJ296 (0.075) 2SK1951 (0.03) 2SJ218 (0.033) 2SK2553 (0.007) * HAT2007F (0.05) 2SK1648 (0.055) 2SK2119 (0.03) 2SK2120 (0.018) 24 V DC 2SJ278 (0.6) 2SJ279 (0.17) 2SJ296 (0.075) 2SJ280 (0.03) 2SK1303 (0.05) 2SK1304 (0.025) 2SJ245 (0.2) 2SJ389 (0.1) 2SJ297 (0.055) 2SK1623 (0.065) * HAT1006F (0.1) 2SK1299 (0.25) 2SK1305 (0.2) 2SJ218 (0.033) * HAT2006F(0.045) 2SK1254 (0.3) 2SK1306 (0.1) 2SJ279 (0.17) 2SJ214 (0.13) 2SJ294 (0.055) 48 V DC 2SJ186 (8.0) 2SJ248 (0.25) 2SJ222 (0.12) 2SK1636 (0.22) 2SK1671 (0.075) 2SK1948 (0.047) 2SK1334 (2.5) 2SK1668 (0.4) 2SK1762 (0.23) 2SK1670 (0.075) 2SK1670 (0.075) 2SK1838 (5.5) 2SK1335 (0.5) 2SK1957 (0.33) 2SK2075 (0.1) 2SJ319 (1.7) 2SK1621 (0.4) 2SK1636 (0.22) 2SK2212 (0.3) Notes: 1. : DII Series : DIII Series : DIV Series : DV Series 2. Package: : DPAK : TO-220AB : TO-220FM : TO-3P : TO-92M : TO-220CFM : UPAK : TO-3PFM : LDPAK : TO-3PL : HDPAK * : SOP-8 3. Values in ( ) show typical “on” resistance R DS(ON) (Ω ) typ. 4. Withstand voltages Input Voltage Withstand Voltages Input Voltage Withstand Voltages AC 100 V to 132 V 300 V, 350 V, 450 V, 500 V DC 5 V to 12 V 30 V, 60 V 200 V to 264 V 600 V, 800 V, 900 V, 1000 V 24 V, 48 V 100 V, 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L and S indicating long and short leads on DPAK, LDPAK and HDPAK packages. 2

LINEUP BY APPLICATION 2. Products for notebook personal computer or wordprocessor use HA178L05A *1 Power management switch 4bit MCU ON/OFF HA16114 P/ FP HA16116 HAT1020R FP 5V ON/OFF 2SJ280 HAT1020R 9V PC HAT1020R HA16121 FP 22 V HAT1020R ON/OFF Vb 12 V *1 Battery HAT2020R P-channel MOS FET VCC Input 2SC2462 VCC (V) V DSS (V) Part Number 5 V to 9 V 12 V to 20 V 2SJ317 HAT1025R HAT1023R 12 V to 24 V 30 V HAT1020R 24 V to 40 V 60 V 2SJ389 2SJ280 Note: * Power management switch circuit 3

LINEUP BY APPLICATION • Lineup Maximum Ratings Electrical Characteristics (typ) 4V 10 V RDS(on) (Ω) RDS(on) (Ω) Part VDSS VGSS ID Pch Ciss Drive Loss Polarity Package Number*1 (V) (V) (A) (W) Typ Max Typ Max (pF) Pd (mW)*3 Pch UPAK 2SJ317 –12 ±7 –2 1*2 0.28 0.35 — — 60 1.2 2SJ278 –60 ±20 –1 1*2 0.8 1.2 0.7 0.83 180 1.8 2SJ450 –1 1*2 0.85 1.2 — — 150 1.8 DPAK 2SJ234 –30 ±20 –2.5 10 0.5 0.7 0.3 0.4 245 1.8 2SJ246 –7 20 0.18 0.25 0.12 0.17 660 5.4 2SJ333 –7 20 0.16 0.2 0.12 0.15 750 6.0 2SJ245 –60 –5 20 0.27 0.38 0.2 0.25 610 5.0 2SJ279 –5 20 0.23 0.27 0.17 0.2 690 7.0 2SJ389 –10 30 0.14 0.2 0.1 0.135 910 9.0 SOP-8 HAT1007F –20 ±20 –3.5 1 0.1 0.15 0.06 0.08 730 6.0 (EIAJ) HAT1002F –30 –3.5 1 0.1 0.13 0.06 0.07 960 7.0 HAT1005F –3.5 1 0.095 0.13 0.07 0.09 840 7.0 HAT1006F –60 –2.5 1 0.14 0.2 0.1 0.14 910 9.0 LDPAK 2SJ296 –60 ±20 –15 50 0.09 0.12 0.075 0.095 1450 15 2SJ297 –20 60 0.072 0.095 0.055 0.065 2200 21 2SJ220 –20 75 0.09 0.13 0.065 0.085 1850 13 2SJ280 –30 75 0.045 0.06 0.033 0.043 3300 35 TO-220FM 2SJ293 –60 ±20 –15 30 0.09 0.12 0.075 0.095 1450 15 2SJ294 –20 35 0.075 0.095 0.055 0.065 2200 21 2SJ295 –30 35 0.045 0.06 0.033 0.043 3300 35 TO-220CFM 2SJ321 –60 ±20 –15 30 0.09 0.12 0.075 0.095 1450 15 2SJ322 –20 35 0.075 0.095 0.055 0.065 2200 21 2SJ323 –30 35 0.045 0.06 0.033 0.043 3300 35 Nch UPAK 2SK1772 30 ±20 1 1*2 0.6 0.85 0.4 0.6 85 1.3 2SK2247 2 1*2 0.3 0.45 0.22 0.35 177 1.5 2SK1764 60 2 1*2 0.4 0.55 0.3 0.4 140 1.1 2SK2315 2 1*2 0.3 0.45 — — 175 1.5 DPAK 2SK1949 60 ±20 5 20 0.15 0.2 0.12 0.15 390 3.0 2SK2334 20 30 0.055 0.07 0.04 0.055 980 9.0 SOP-8 HAT2002F 30 ±20 5 1 0.05 0.06 0.03 0.04 860 7.0 (EIAJ) HAT2007F 4 1 0.065 0.11 0.04 0.07 680 5.0 HAT2006F 60 4 1 0.065 0.075 0.045 0.06 860 9.0 LDPAK 2SK1918 60 ±20 25 50 0.043 0.06 0.03 0.04 1450 15 2SK1919 40 75 0.023 0.028 0.018 0.022 3530 25 2SK2553 50 75 0.01 0.016 0.007 0.01 3550 35 TO-220FM 2SK1094 60 ±20 15 25 0.075 0.095 0.055 0.065 860 6.0 2SK1951 25 30 0.043 0.06 0.03 0.04 1450 15 2SK1952 40 35 0.023 0.028 0.018 0.022 3530 25 TO-220CFM 2SK2346 60 ±20 20 25 0.05 0.07 0.036 0.045 1130 10 2SK2119 25 30 0.043 0.06 0.03 0.04 1450 15 2SK2120 40 35 0.023 0.028 0.018 0.022 3530 25 2SK2529 50 35 0.01 0.016 0.007 0.01 3550 35 Notes: 1. ( ) indicates a product under development, and subject to specification changes without notice. 2. Allowable value when alumina-ceramic substrate (12.5 × 20 × 0.7 mm) is used. 3. Drive loss when f = 100 kHz and VGS = 5 V. (E.g., if f = 200 kHz, the value is doubled.) 4

LINEUP BY APPLICATION 3. Products for power management switch use Notebook PC or wordprocessor Camcorder Cellular or cordless phone Charger/ AC adapter Charger Vin Note: *Power management switch AC adapter 4 bit MCU HAT1020R * HAT1020R D/D con 5V IC HAT1020R 2SJ280 –9 V HAT1020R –22 V D/D con IC HAT1020R 12 V Vb Battery * HAT2020R Typical circuit showing application to DC/DC converter power supply of notebook PC 5

LINEUP BY APPLICATION • Lineup Main Characteristics Part VDSS ID RDS(on) (Ω) Application Package Number (V) (A) Typ Max Notebook PC, LDPAK 2SJ280 –60 –30 0.033 0.043 wordprocessor, SOP-8 HAT1002F –30 –3.5 0.06 0.07 etc. DPAK 2SJ318 –20 –5 0.09 0.13 2SJ333 –30 –7 0.1 0.14 UPAK 2SJ361 –20 –2 0.28 0.4 Camcorder SOP-8 HAT1001F –20 –3.5 0.05 0.07 DPAK 2SJ318 –5 0.09 0.13 2SJ332 –10 0.05 0.08 Cellular or MPAK 2SJ451 –20 –0.2 2.3 3.5 cordless phone UPAK 2SJ317 –12 –2 0.28 0.35 2SJ361 –20 –2 0.28 0.4 SOP-8 HAT1001F –20 –3.5 0.05 0.07 (EIAJ) HAT1004F –20 –2.5 0.1 0.12 DPAK 2SJ318 –20 –5 0.09 0.13 2SJ332 –20 –10 0.05 0.08 4. Products for use in AC adapter (camcorder charger, etc.) Power management switching circuit HRW26F Forward converter 2SJ318 HRA73 Ic Vb 2SK1572 2SJ332 HA16107 For main switching – ∆Vb 4-bit micro- Voltage/current A/D Vd controller converter –∆Vb Ic protection D/A Timer converter Time 6

LINEUP BY APPLICATION • Lineup Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch RDS(on) (Ω) ton toff Ciss Drive Loss*1 Package Number (V) (V) (A) (W) Typ Max (ns) (ns) (pF) Pd (mW) TO-220CFM 2SK2431 450 ±30 3 25 2.0 2.8 27 50 330 45 2SK2423 7 35 0.55 0.7 72 145 1150 150 2SK2424 8 0.4 0.55 75 180 1450 175 2SK2114 450 ±30 5 35 1.0 1.4 35 80 640 80 2SK2115 500 1.2 1.5 2SK2116 450 ±30 7 35 0.6 0.8 70 135 1050 125 2SK2117 500 0.7 0.9 2SK2144 600 ±30 3 25 3.8 5.0 33 95 295 40 2SK2097 4 35 1.8 2.4 38 95 600 80 2SK2118 5 35 1.1 1.5 57 160 1000 130 TO-220AB 2SK2328 650 ±30 7 75 1.0 1.4 65 150 1180 150 2SK1338 900 ±30 2 50 5.0 7.0 45 110 425 85 2SK1807 900 4 75 3.0 4.0 85 180 740 150 TO-220FM 2SK1862 450 ±30 3 25 2.0 2.8 27 50 330 45 2SK1863 500 2.2 3.0 2SK1626 450 ±30 5 35 1.0 1.4 35 80 640 80 2SK1627 500 1.2 1.5 2SK1566 450 ±30 7 35 0.6 0.8 70 135 1050 125 2SK1567 500 0.7 0.9 2SK1572 600 ±30 3 25 3.8 5.0 33 95 295 40 2SK1637 600 4 35 1.8 2.4 38 95 600 80 2SK1404 600 5 35 1.1 1.5 57 160 1000 130 2SK2422 650 ±30 4 35 2.0 2.6 38 95 600 80 2SK1808 900 ±30 4 35 3.0 4.0 85 180 740 150 LDPAK 2SK1313 450 ±30 5 50 1.0 1.4 35 80 640 80 2SK1314 500 1.2 1.5 2SK1540 450 ±30 7 60 0.6 0.8 70 135 1050 125 2SK1541 500 0.7 0.9 2SK1618 600 ±30 3 30 3.8 5.0 33 95 295 40 2SK1624 600 4 50 1.8 2.4 38 95 600 80 2SK1647 900 2 50 5.0 7.0 45 110 425 85 DPAK 2SK1880 600 ±30 1.5 20 6.5 8.0 35 65 250 32 2SK2059 600 3 20 3.8 5.0 33 95 295 40 Note: 1. Drive loss when f = 500 kHz and VGS = 10 V. 7

LINEUP BY APPLICATION 5. Products for machine tool use (electric discharge machine, etc.) • For electric discharge machine Power supply Reel Wire M Liquid tank L Piece 200 - 500 L kHz M Motor X M Reel NC control M Motor Y circuit VDS (voltage) I D (current) VCC 0 f = 200 kHz to 500 kHz Power MOS FET operation waveform 8

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-3P 2SK1164 500 ±30 11 100 0.55 10 90 180 1450 2SK1166 500 ±30 12 100 0.45 10 90 180 1450 2SK1168 500 ±30 15 100 0.3 13 140 220 2050 2SK1170 500 ±30 20 120 0.22 16 147 290 2800 2SK1573 600 ±30 15 125 0.35 14 140 340 3150 TO-3PL 2SK1526 450 ±30 40 250 0.11 30 235 580 5800 2SK1527 500 ±30 40 250 0.12 30 235 580 5800 2SK1629 500 ±30 30 200 0.22 20 172 300 2800 2SK1971 500 ±30 35 250 0.19 24 220 450 4320 Module PM5050J 500 ±30 50 250 0.14 30 315 390 5800 Contains 2 J/N type elements PM4575J 450 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements PM5075J 500 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements Notes: * Allowable value at TC = 25°C : indicates type with built-in high-speed diode. (trr = 100 ns to 150 ns typ) 9

LINEUP BY APPLICATION • For welding equipment Rectifier circuit Main circuit (MOS FET) Load Q1 Q2 CO2 – + AC + 200 V – Q3 Q4 PWM To MOS FET input AC 200 V Control circuit Starter circuit t ON T VCC Voltage Q 2Q 3 Current Q 1Q 4 Power MOS FET operation waveform 10

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-3P 2SK1517 450 ±30 20 120 0.20 16 165 345 3050 2SK1518 500 ±30 20 120 0.22 16 165 345 3050 TO-3PL 2SK1519 450 ±30 30 200 0.11 25 235 615 5800 2SK1520 500 ±30 30 200 0.12 25 235 615 5800 2SK1521 450 ±30 50 250 0.08 35 335 850 8700 2SK1522 500 ±30 50 250 0.085 35 335 850 8700 2SK1526 450 ±30 40 250 0.11 30 235 580 5800 2SK1527 500 ±30 40 250 0.12 30 235 580 5800 2SK1628 450 ±30 30 200 0.20 20 172 300 2800 2SK1629 500 ±30 30 200 0.22 20 172 300 2800 2SK1971 500 ±30 35 250 0.19 24 220 450 4320 Module PM4550J 450 ±30 50 250 0.14 30 315 390 5800 Contains 2 J/N type elements PM4575J 450 ±30 75 300 0.1 45 410 685 8700 Contains 2 elements Notes: * Allowable value at TC = 25°C : indicates type with built-in high-speed diode. (trr = 100 ns to 150 ns typ) 11

LINEUP BY APPLICATION 6. Products for use in uninterruptive power supply (UPS) • Speed enhancement of built-in diode Item DIII-HF (2SK1518) DIII-H (2SK1170) Waveform photo show- i F = 20 A i F = 20 A ing reverse di/dt = 100 A/µs di/dt = 100 A/µs recovery time (trr) of built-in diode t: 200 ns/DIV t: 200 ns/DIV 2SK1518 (500 V/20 A) I: 10 A/DIV 2SK1170 (500 V/ I: 10 A/DIV t rr =120 ns 20 A) t rr = 500 ns t rr = 120 ns t rr = 500 ns Main VDSS (V) 500 500 charac- I (A) 20 20 teristics D RDS(on) Typ 0.22 0.22 (Ω) Max 0.27 0.27 12

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* 10 V RDS(on) (Ω) VGSS(OFF) trr Package Number (V) (V) (A) (W) Typ Max (V) (ns) TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 2 to 3 120 2SK1669 250 ±30 30 125 0.075 0.095 2 to 3 90 2SK1515 450 ±30 10 100 0.6 0.8 2 to 3 120 2SK1516 500 0.7 0.9 2SK2568 500 ±30 12 100 0.45 0.60 2 to 3 120 2SK1517 450 ±30 20 120 0.2 0.25 2 to 3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 2 to 3 140 2SK1519 450 ±30 30 200 0.11 0.15 2 to 3 120 2SK1520 500 0.12 0.16 2SK1521 450 ±30 50 250 0.08 0.10 2 to 3 120 2SK1522 500 0.085 0.11 TO-3P · FM 2SK2008 250 ±30 20 60 0.12 0.15 2 to 3 120 2SK1670 250 ±30 30 60 0.075 0.095 2 to 3 90 2SK1405 600 ±30 15 60 0.35 0.50 2 to 3 140 Note: * Allowable value at TC = 25°C 13

LINEUP BY APPLICATION 1.2 Motor Drive Use 1. Products for use in office equipment andother small motor driving applications Wordprocessor Motor drive PPC Printer Paper feeder Motor drive Drum driver Paper feeder 5 12 6 11 Pch 4 3 7 10 8 9 2 Nch 1 6AM12, 6AM13, 6AM14 Typical equivalent circuit 14

LINEUP BY APPLICATION • Lineup Main Characteristics Part VDSS ID Pch RDS(on) (10 V) Built-in Chip (single) Package Number (V) (A) (W) Typ Max N channel P channel SP-10 4AM11 60 5 28 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –5 0.15 0.2 4AM12 60 8 28 0.06 0.075 2SK971 × 2 2SJ173 × 2 –60 –8 0.09 0.12 4AM13 60 3 28 0.25 0.35 2SK973 × 2 2SJ182 × 2 –60 –3 0.28 0.4 SP-12 4AM16 60 8 36 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –8 0.15 0.2 6AM11 60 5 36 0.13 0.17 2SK970 × 3 2SJ172 × 3 –60 –5 0.15 0.2 4AJ11 –60 –8 28 0.09 0.13 — 2SJ173 4AK26 60 10 28 0.045 0.065 2SK972 × 4 SP-12TA 6AM12 60 7 42 0.13 0.17 2SK970 × 3 2SJ172 × 3 –60 –7 0.15 0.2 6AM13 60 10 42 0.06 0.075 2SK971 × 3 2SJ173 × 3 –60 –10 0.09 0.12 6AM14 60 7 42 0.11 0.14 (no single (no single –60 –7 0.095 0.13 chip) chip) 4AM14 60 8 32 0.13 0.17 2SK970 × 2 2SJ172 × 2 –60 –8 0.15 0.2 4AM15 200 4 32 0.33 0.5 2SK1957 × 2 2SJ410 –200 –4 0.7 0.9 4AK23 100 5 32 0.2 0.3 2SK1300 × 4 — 15

LINEUP BY APPLICATION 2. Products for use in power tools and radio-controlled models Radio-controlled model M Power tool V CC M SW Pulse V CC generator circuit (battery) SW 16

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-220AB 2SK2205 30 ±20 45 75 0.011 38 260 360 3600 DIV 2SK1911 60 ±20 40 75 0.018 35 180 850 3530 DIV TO-220 2SK2206 30 ±20 45 35 0.011 38 260 360 3600 DIV CFM 2SK2120 60 ±20 40 35 0.018 35 180 850 3530 DIV 2SK2529 60 ±20 50 35 0.007 55 265 830 3550 DV LDPAK 2SK1919 60 ±20 40 75 0.018 35 180 850 3530 DIV 2SK2204 30 ±20 45 75 0.011 38 260 360 3600 DIV 2SK2553 60 ±20 50 75 0.007 55 265 830 3550 DV TO-3P 2SK2096 60 ±20 45 100 0.018 35 180 850 3530 DIV 2SK2586 60 ±20 60 125 0.007 60 295 850 3550 DV 2SK2554 60 ±20 75 150 0.0045 80 480 2100 7700 DV TO-3PFM 2SK2203 60 ±20 50 60 0.007 65 365 560 8330 DIV Note: * Allowable value at TC = 25°C 17

LINEUP BY APPLICATION 3. Products for game use Lamp and LED driver 7 7 7 Solenoid and motor driver Relay and switch substitute • Lineup Absolute Maximum Ratings Electrical Characteristics (typ) Part VDSS VGSS ID Pch* RDS(on) (Ω) |yfs| ton toff Ciss Package Number (V) (V) (A) (W) (VGS = 10 V) (S) (ns) (ns) (pF) Remarks TO-92 2SK1336 60 ±20 0.3 0.4 1.3 0.35 6 34 33 4 V drive TO-92M 2SK975 60 ±20 1.5 0.9 0.3 1.5 15 80 140 4 V drive TO-126 2SK1270 60 ±20 2 10 0.3 1.5 15 80 140 4 V drive DPAK 2SJ182 –60 ±20 –3 20 0.28 2.7 35 245 425 4 V drive 2SK973 60 ±20 2 10 0.25 2.0 19 120 240 4 V drive 2SK974 60 ±20 3 20 0.15 4.0 30 255 400 4 V drive 2SK1299 100 ±20 3 20 0.25 4.0 40 220 400 4 V drive TO-220AB 2SK970 60 ±20 10 30 0.12 6.0 60 230 400 4 V drive 2SK1300 100 ±20 10 40 0.2 7.0 65 240 525 4 V drive TO-220FM 2SK1093 60 ±20 10 20 0.12 6.0 60 230 400 4 V drive 2SK1305 100 ±20 10 25 0.2 7.0 65 240 525 4 V drive SP-10 4AK18 60 ±20 2.5 28 0.25 2.0 19 120 240 4-element (array) array 4AK22 120 ±20 3 28 0.3 4.0 25 195 400 4-element array Note: * Allowable value at TC = 25°C 18

LINEUP BY APPLICATION 1.3 Servo Motor/Inverter Application Servo motor (machine tool) Motor driver Y AKTOMA Inverter (Air Conditioner) Inverter M Motor Convertor 19

LINEUP BY APPLICATION • Lineup Absolute Maximum Ratings Electrical Characteristics 10 V RDS(on) (Ω) VDSS VGSS ID Pch trr, tf Device Package Part No. (V) (V) (A) (W) Typ Max (ns) Power High speed TO-220AB 2SK2408 500 ±30 7 60 0.7 0.9 120 MOS built-in TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 120 FET diode 2SK1669 250 30 125 0.075 0.095 90 series 2SK1515 450 10 100 0.6 0.8 120 2SK1516 500 0.7 0.9 2SK2568 500 12 100 0.45 0.6 120 2SK1517 450 20 120 0.2 0.25 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 140 2SK1519 450 30 200 0.11 0.15 120 2SK1520 500 0.12 0.16 2SK1521 450 50 250 0.08 0.1 120 2SK1522 500 0.085 0.11 TO-3P• 2SK2008 250 ±30 20 60 0.12 0.15 120 FM 2SK1670 250 30 60 0.075 0.095 90 2SK1405 600 15 60 0.35 0.5 140 Standard TO-3P 2SK1671 250 ±30 30 125 0.075 0.095 400 series TO-3PL 2SK1948 50 200 0.047 0.06 450 TO-3P 2SK1170 500 ±30 20 120 0.22 0.27 500 TO-3PL 2SK1629 30 200 0.22 0.27 600 2SK1671 35 200 0.19 0.23 530 2SK1527 45 250 0.12 0.16 600 2SK1837 50 250 0.085 0.11 620 20

LINEUP BY APPLICATION 1.4 Automotive Use Car electrical systems 2 Transmission 1 Engine 4 Instrument 5 Comfort control system panel system Fuel injector Automatic transmission Electromagnetic pump Illumination control Airconditioner (torque converter), etc. Electromagnetic Power windows valve, etc. Power mirror Power seats, etc. 6 Safety Air Bag System etc. 5 Wheel base and body control Anti-skid brakes Suspension Power steering Vehicle height control, etc. Advantages of power MOS FET use (VDSS ≤ 150 V class) Saturation voltages can be made lower than with bipolar transistors. (Ex.): Bipolar MOS FET VCE (sat) 1.8 V (at 25 A) → 0.85 V 0.85 V (at 5 A) → 0.16 V This means heat sinks can be made smaller or eliminated altogether. + Equipment can be driven directly by a 5-V power supply. Lower driving power means simpler circuits. Peripheral parts can be made more compact, and fewer parts are needed. Smaller, less expensive, and more reliable equipment can be achieved. 21

LINEUP BY APPLICATION • Lineup Application Field Part Number Package Pch VDSS/ID Ron (typ) Engine 2SK1318 TO-220FM 35 W 120 V/20 A 0.095 Ω Fuel injector 2SK1094 TO-220FM 25 W 60 V/15 A 0.055 Ω 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Electromagnetic pump 2SK1918 LDPAK 50 W 60 V/25 A 0.03 Ω Electromagnetic valve, 2SJ293 TO-220FM 30 W –60 V/–15 A 0.075 Ω etc. 2SJ245 L DPAK 20 W –60 V/–5 A 0.2 Ω 2SJ296 LDPAK 50 W –60 V/–15 A 0.075 Ω Transmission system 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Automatic transmission 2SJ294 TO-220FM 35 W –60 V/–20 A 0.055 Ω (torque converter), etc. 2SJ291 TO-220 75 W –60 V/–20 A 0.055 Ω 2SJ279 L DPAK 20 W –60 V/–5 A 0.17 Ω 2SK1648 LDPAK 50 W 60 V/15 A 0.055 Ω Wheel base and body 2SK1307 TO-220FM 35 W 100 V/20 A 0.065 Ω control 2SK1318 TO-220FM 35 W 120 V/20 A 0.095 Ω Anti-skid brakes 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Suspension 2SK974 L DPAK 20W 60 V/3 A 0.15 Ω 2SK1299 L DPAK 20 W 100 V/3 A 0.25 Ω Power steering 2SK2096 TO-3P 100 W 60 V/45 A 0.018 Ω Vehicle height control, 2SJ217 TO-3P 100 W –60 V/–45 A 0.033 Ω etc. 2SJ294 TO-220FM 35 W –60 V/–20 A 0.055 Ω 4AK16 SP-10 28 W 60 V/5 A 0.12 Ω 4AK18 SP-10 28 W 60 V/2.5 A 0.25 Ω Instrument panel 2SK1910 TO-220 50 W 60 V/25 A 0.03 Ω Illumination control 2SK971 TO-220 40 W 60 V/15 A 0.055 Ω 2SK1094 TO-220FM 25 W 60 V/15 A 0.055 Ω 2SK1951 TO-220FM 30 W 60 V/25 A 0.03 Ω Comfort control system 2SK1304 TO-3P 100 W 100 V/40 A 0.025 Ω Airconditioner 2SK2096 TO-3P 100 W 60 V/45 A 0.018 Ω 2SK1093 TO-220FM 20 W 60 V/10 A 0.12 Ω Power windows 2SK974 L DPAK 20 W 60 V/3 A 0.15 Ω Power mirror 2SK1949 L DPAK 20 W 60 V/5 A 0.12 Ω Power seats, etc. 2SJ293 TO-220FM 30 W –60 V/–15 A 0.075 Ω 2SJ280 LDPAK 75 W –60 V/–30 A 0.033 Ω 2SJ217 TO-3P 100 W –60 V/–45 A 0.033 Ω 4AK18 SP-10 28 W 60 V/2.5 A 0.25 Ω 4AK22 SP-10 28 W 120 V/3 A 0.3 Ω 22

LINEUP BY APPLICATION • Lineup (cont) Application Field Part Number Package Pch VDSS/ID Ron (typ) Safety 2SK1579 UPAK 1W 12 V/2 A 0.36 Ω Air Bag System 2SK975 TO-92Mod 0.9 W 60 V/1.5 A 0.3 Ω 2SK974 L DPAK 20 W 60 V/3 A 0.15 Ω Passive belt etc. 2SK2334 L DPAK 30 W 60 V/20 A 0.04 Ω 2SJ182 L DPAK 20 W –60 V/–3 A 0.28 Ω 2SJ389 L DPAK 30 W –60 V/–10 A 0.1 Ω 2SK1095 TO-220FM 30 W 60 V/25 A 0.033 Ω 2SK1910 TO-220AB 50 W 60 V/25 A 0.03 Ω 2SJ220 LDPAK 75 W –60 V/–20 A 0.065 Ω 4AM16 SP-10 36 W 60 V/–60 A 0.13/0.15 Ω 8 A/–8 A 23

LINEUP BY APPLICATION 1.5 Lamp Inverter Application Inverter • Lineup Absolute Maximum Ratings Electrical Characteristics 10 V RDS(on) (Ω) VDSS VGSS ID Pch VGS (off) Package Part Number (V) (V) (A) (W) Typ Max (V) TO-220CFM 2SK2114 450 ±30 5 35 1.0 1.4 2 to 3 2SK2115 500 ±30 5 35 1.2 1.5 2 to 3 2SK2116 450 ±30 7 35 0.6 0.8 2 to 3 2SK2117 500 ±30 7 35 0.7 0.9 2 to 3 2SK2118 600 ±30 5 35 1.1 1.5 2 to 3 TO-220FM 2SK1668 250 ±30 7 30 0.4 0.55 2 to 3 2SK1762 250 ±30 12 35 0.23 0.35 2 to 3 2SK1626/27 450/500 ±30 5 35 1.0/1.2 1.4/1.5 2 to 3 2SK1566/67 450/500 ±30 7 35 0.6/0.7 0.8/0.9 2 to 3 2SK1404 600 ±30 5 60 1.1 1.5 2 to 3 LDPAK 2SK1313/14 450/500 ±30 5 50 1.0/1.2 1.4/1.5 2 to 3 2SK1540/41 450/500 ±30 7 60 0.6/0.7 0.8/0.9 2 to 3 2SK1315/16 450/500 ±30 8 60 0.55/0.6 0.7/0.8 2 to 3 TO-3P 2SK2075 250 ±30 20 100 0.105 0.13 2 to 3 2SK1671 250 ±30 30 125 0.075 0.095 2 to 3 2SK1161/62 450/500 ±30 10 100 0.6/0.7 0.8/0.9 2 to 3 2SK1163/64 450/500 ±30 11 100 0.55/0.6 0.7/0.8 2 to 3 2SK1165/66 450/500 ±30 12 100 0.4/0.45 0.55/0.6 2 to 3 TO-3PFM 2SK1831/32 450/500 ±30 10 50 0.6/0.7 0.8/0.9 2 to 3 2SK1328/29 450/500 ±30 12 60 0.4/0.5 0.55/0.6 2 to 3 2SK1405 600 ±30 15 60 0.35 0.5 2 to 3 24

LINEUP BY APPLICATION 1.6 CRT Display Use Switching power supply V in Video signal switch Video output Vertical Vertical Horizontal VDT output AFC output Anode voltage High-voltage Horizontal stabilization AFC oscillation Horizontal drive Flyback interval switching S compensation switching 25

LINEUP BY APPLICATION • Lineup Maximum Ratings RDS(on) (Ω) VDSS IC Pch* Main Use Part Number Package (V) (mA) (W) Typ Max S compensation switching 2SK2212 TO-220FM 200 10 30 0.24 0.30 2SK2590 TO-220AB 200 10 50 0.33 0.45 Flyback interval switching 2SK1155 TO-220AB 450 5 50 1.0 1.4 2SK1314 LDPAK 500 5 50 1.2 1.5 2SK1338 TO-220AB 900 3 50 5.0 7.0 Switching For 100 V 2SK1567 TO-220FM 500 7 60 0.7 0.9 power AC supply 2SK1831 TO-3PFM 450 10 50 0.6 0.8 2SK1328 450 12 60 0.4 0.55 2SK1329 500 12 60 0.4 0.6 For both 2SK1404 TO-220FM 600 5 35 1.1 1.5 100 V and 2SK2328 TO-220AB 650 7 75 1.0 1.4 200 V AC 2SK1341 TO-3P 900 6 100 2.0 3.0 2SK1342 900 8 100 1.2 1.6 2SK1775 TO-3PFM 900 8 60 1.2 1.6 Horizontal deflection 2SJ410 TO-220FM –200 –6 30 0.7 0.85 power supply Horizontal High voltage 2SK1773 TO-3P 1000 5 100 1.5 2.0 deflection Very high 2SK1317 TO-3P 1500 2.5 100 9.0 12 output voltage 2SK2225 TO-3PFM 1500 2.0 50 9.0 12 2SK1835 TO-3P 1500 4 125 4.6 7.0 2SK2393 TO-3PL 1500 8 200 1.9 2.8 Horizontal deflection drive 2SK1862 TO-220FM 450 3 20 2.0 2.8 2SK1910 TO-220AB 60 25 50 0.03 0.04 Video output 2SK619 TO-126MOD 70 0.3 10 — 50 2SK1197 TO-126MOD 100 0.5 20 — 25 * Tc = 25°C 26

Section 2 Series Lineup 2.1 D Series Lineup (vertical structure) ID (A) VDS (V) 0.3 [0.5] 1 [1.5] 2 3 [4] 5 6 7 8 10 [11] 12 13 20 5 2SJ361 (0.4) HAT1001F(0.05) 2SJ318 (0.085) 2SK2084 (0.04) 2SJ332 (0.05) HAT1004F (0.1) HAT1007F(0.05) 2SJ387 (0.05) HAT2005(0.05) 30 5 2SK2247(0.25) HAT1002F (0.06) HAT2001F (0.035) 2SJ246 (0.13) 2SK2329 (0.03) HAT1008F(0.085) HAT1005F (0.07) HAT2002F (0.03) 2SJ333 (0.1) HAT2003F(0.13) 2SK2418 (0.04) 2SJ234 (0.3) 2SJ388 (0.06) 60 × 2SK1336 (1.3) + (2SK975) (0.3) 2SK973 (0.25) 2SK974 (0.15) 4AK16 (0.12) 4AK15 (0.055) 2SK970 (0.12) 2SJ214 (0.15) 5 2SK1697 (1.3) 5 2SJ278 (0.7) 4AK18 (0.25) 2SJ182 (0.25) 4AM11 4AM12 2SK1093 (0.12) 2SK2390 (0.07) 5 2SJ450 (0.85) 5 2SK1764 (0.3) 2SK1950 (0.2) 2SJ245 (0.2) 2SJ172 (0.15) HAT1006F (0.11) 2SJ235 (0.28) 2SJ279 (0.17) 2SJ175 (0.15) 5 2SK2315 (0.4) 2SK1949 (0.12) 2SJ389 (0.1) 2SJ390 (0.09) 100 × 2SK1337 (3.5) + 2SK2085 (0.6) 2SK1299 (0.25) 2SJ247 (0.3)* 2SK1300 (0.2) 2SK1778 (0.2) 5 2SK1698 (3.5) 2SJ248 (0.3)* 2SK1305 (0.2) 120 2SK1254 (0.3) 2SJ350 (0.5) 2SK2202 (0.3) 150 2SK740 (0.12) 2SK1620 (0.12) 200 5 [2SJ186] (8.0) 5 2SK1334 (2.5) 2SK1335 (0.5) 2SK1957 (0.33) 2SK2212 (0.24) 2SK2590 (0.33) 250 2SK1838 (5.5)* 2SK741 (0.4) 2SK401 (0.3) 2SK1761 (0.23) 2SK1621 (0.4) 2SK1762 (0.23) 2SK1667 (0.4) 2SK2426 (0.23) 2SK1668 (0.4) 2SK2425 (0.4) 300 2SJ130 (6.0) 2SK2345 (0.6) 2SK1400 (0.5) 350 2SK1400A (0.6) 400 2SJ117 (5.0) 450 [2SK1151] (3.5) 2SK1153 (2.0) 2SK1155 (1.0) 2SK1157 (0.6) 2SK1159 (0.55) 2SK1161 (0.6) 2SK1165 (0.40) 2SK1862 (2.0) 2SK1313 (1.0) 2SK1540 (0.6) 2SK1315 (0.55) [2SK1163] (0.55) 2SK1328 (0.4) 2SK2431 (2.0) 2SK1626 (1.0) 2SK1566 (0.6) 2SK2424 (0.4) 2SK1515 (0.6) 2SK2114 (1.0) 2SK2116 (0.7) 2SK2423 (0.55) 500 [2SK1152] (4.0) 2SK1154 (2.2) 2SK1156 (1.2) 2SK1158 (0.7) 2SK1160 (0.6) 2SK1162 (0.7) 2SK1166 (0.45) 2SK1863 (2.2) 2SK1314 (1.2) 2SK1541 (0.7) 2SK1316 (0.6) [2SK1164] (0.6) 2SK1329 (0.45) 2SK1627 (1.2) 2SK1567 (0.7) 2SK2591 (0.45) 2SK1516 (0.6) 2SK2568 (0.45) 2SK2115 (1.2) 2SK2117 (0.7) 2SK2408 (0.7) 600 2SJ181 (15) [2SK1880] (6.5) [2SK1402] (1.8) 2SK1404 (1.1) 2SK1625 (0.9) 2SK1403 (0.9) 2SK1968 (0.68) 2SK1572 (3.8) 2SK1809 (1.1) [2SK1637] (1.8) 2SK2118 (1.1) 2SK1618 (3.8) [2SK1624] (1.8) 2SK2059 (3.8) 2SK2144 (3.8) [2SK2097] (1.8) 650 2SK1402A (2.0) 2SK2328 (1.0) 2SK1403A (1.0) 2SK2422 (2.0) 900 [2SK1338] (5.0) 2SK1339 (5.0) 2SK1340 (3.0) 2SK1341 (2.0) 2SK1342 (1.2) 2SK1933 (0.9) [2SK1647] (5.0) [2SK1807] (3.0) 2SK1859 (2.0) 2SK1775 (1.2) [2SK1808] (3.0) 1000 2SK1773 (1.5) 2SK1934 (1.0) 1500 2SK1317 (9) [2SK1835] (4.6) Notes: 1. ( ) : RDS (on) typ (Ω) : Type with built-in high-speed diode : New device : DII Series : DIII Series : DIV Series 2. : DPAK : TO-220FM : TO-3P + : TO-92M : Module × : TO-92 : LDPAK : SOP-8 : HDPAK : TO-126 : TO-3PL : TO-220AB : TO-3P·FM 5 : UPAK : TO-220CFM 2

SERIES LINEUP 2.1 D Series Lineup (vertical structure) (cont) ID (A) VDS (V) 15 [20] 25 30 [35] 40 [45] 50 [upper 60A] 20 30 2SK2205 (0.011) 2SK2204 (0.011) 2SK2206 (0.011) 60 2SK971 (0.055) 2SJ293 (0.075) 2SK972 (0.03) 2SK1951 (0.03) 2SK1296 (0.024) 2SJ295 (0.033) 2SK1297 (0.015) [2SJ217] (0.033) 2SK2121 (0.007) 2SK1094 (0.055) 2SJ296 (0.075) 2SK1095 (0.03) 2SK1918 (0.03) [2SJ215] (0.045) 2SJ280 (0.033) 2SK1298 (0.015) [2SJ218] (0.033) 2SK2203 (0.007) 2SJ173 (0.09) [2SJ291] (0.055) 2SK1622 (0.03) 2SK2119 (0.03) [2SJ216] (0.045) 2SJ323 (0.033) 2SK1911 (0.018) 2SJ408 (0.015) 2SJ176 (0.09) [2SJ294] (0.055) 2SK1910 (0.03) 2SJ292 (0.033) 2SK1952 (0.018) [2SK2586] (0.007) [2SJ174] (0.065) [2SJ297] (0.055) 2SK1919 (0.018) [2SK2554] (0.0045) [2SJ177] (0.065) 2SK2175 (0.1) 2SK2096 (0.018) 2SJ219 (0.09) 2SK2334 (0.04) 2SK2120 (0.018) [2SJ220] (0.065) 2SJ321 (0.075) 2SK1648 (0.055) [2SJ322] (0.05) 2SJ290 (0.075) [2S2346] (0.036) 100 2SK1301 (0.1) [2SK1623] (0.065) 2SK1303 (0.05) 2SK1304 (0.025) 2SK1306 (0.1) [2SJ221] [2SK1302] (0.065) 2SJ222 (0.12) [2SK1307] (0.065) 2SJ409 (0.12) 120 150 200 250 2SK1636 (0.22) 2SK2007 (0.12) 2SK2007 (0.12) 2SK1947 (0.047) 2SK2008 (0.12) 2SK2008 (0.12) 2SK1948 (0.047) 2SK1671 (0.07) 300 2SK1401 (0.25) 350 2SK1401A (0.3) 400 450 2SK1167 (0.25) PM45302F (0.13) PM45502C (0.08) [2SK1169] (0.20) 2SK1519 (0.11) 2SK1521 (0.08) 2SK1517 (0.20) 2SK1628 (0.2) PM4550J (0.15) 2SK1526 (0.11) 2SK1836 (0.08) 500 [2SK2174] (0.22) PM50302F (0.15) PM50502C (0.09) 2SK2330 (0.3) 2SK1629 (0.22) 2SK1520 (0.085) 2SK1168 (0.30) 2SK1520 (0.12) PM5050J (0.15) [2SK1170] (0.22) 2SK1518 (0.22) 2SK1527 (0.12) 2SK1837 (0.09) [2SK1971] (0.19) 600 2SK1405 (0.35) 2SK1573 (0.35) 650 900 1000 1500 Notes: 1. ( ) : RDS (on) typ (Ω) : Type with built-in high-speed diode : DII Series : DIII Series : DIV Series : DV Series 2. : DPAK : TO-220FM : TO-3P + : TO-92M : Module × : TO-92 : LDPAK : SOP-8 : HDPAK : TO-126 : TO-3PL : TO-220AB : TO-3P·FM 5 : UPAK : TO-220CFM 3

SERIES LINEUP 2.2 S Series Lineup (lateral structure) V DS (V) 0.3 0.5 2 4 5 7 8 12 16 120 2SK1056 (1.0) 2SJ160 (1.0) 140 2SK213 (8) 2SK1057 (1.0) 2SJ76 (10) 2SJ161 (1.0) 160 2SK214 (8) 2SK135 (1.0) 2SJ77 (10) 2SJ150 (1.0) 2SK1058 (1.0) 2SJ162 (1.0) 180 2SK215 (8) 2SK408 (7) 2SK318 (1.9) 2SJ351 (1.0) 2SJ78 (10) 2SJ409 (7) 2SK2220 (1.0) 200 2SK216 (8) 2SJ352 (1.0) 2SJ79 (10) 2SK2221 (1.0) Notes: 1. ( ) : RDS (on) typ (Ω ) 2. Package: : TO-220AB : TO-126 : TO-3P 4

SERIES LINEUP Table 2-1 Typical D Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number RDS(on) (Ω) VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-3P 2SK1317 — 1500 ±20 2.5 100 9.0 12.0 0.75 87 170 990 2SK1835 — 4 125 4.6 7.0 1.4 105 310 1700 TO-3PFM 2SK2225 — 1500 2 50 9.0 12.0 0.75 67 200 990 HDPAK 2SK2278 — 1500 25 100 9.0 12.0 0.75 87 170 990 TO-3PL 2SK2393 — 1500 8 200 1.9 2.8 3.0 255 385 4370 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS ≥ ID × RDS(on), ID ≈ 1/2 ID max (DC) Table 2-2 Typical S Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number RDS(on) (Ω) VDSS VGSS ID Pch *2 |yfs|*3 ton toff Ciss fC Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) (MHz) TO-220AB 2SK213 2SJ76 140*1 ±15 0.5 30 8/10 — 0.15/0.1 20 30 90/120 40/30 2SK214 2SJ77 160*1 2SK215 2SJ78 180*1 2SK216 2SJ79 200*1 ±15 0.5 30 8/10 — 0.15/0.1 20 30 90/120 40/30 TO-3P 2SK1056 2SJ160 120*1 ±15 7 100 1.0 1.7 1.0 180/230 60/110 600/900 3/2 2SK1057 2SJ161 140*1 2SK1058 2SJ162 160*1 2SK2220 2SJ351 180 ±20 8 100 1.0 1.7 1.0 250/320 90/120 800/1200 2/1 2SK2221 2SJ352 200 Notes: 1. VDSX 2. Allowable value at TC = 25°C 3. Test conditions: VDS > ID × RDS(on), ID ≈ ID max (DC) 5

SERIES LINEUP 2.3 Power MOS FET DII Series Table 2-3 Typical DII Series Characteristics Maximum Ratings Electrical Characteristics (typ) Part Number VDSS VGSS ID Pch*1 RDS(on) (Ω) |yfs|*2 ton toff Ciss Package N-ch P-ch (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) UPAK 2SK1334 2SJ186 200 ±20 1/0.5 1 2.5/8.0 3.8/12.0 0.6/0.3 13/12 17/32 80/75 DPAK — 2SJ130 300 ±20 –1 20 6.0 8.5 0.4 35 60 235 2SK1335 2SJ319 200 ±20 3 20 0.5/1.7 0.8/2.3 2.3/1 37/40 50/70 380/330 — 2SJ181 –600 ±15 –0.5 20 15 25 0.45 27 70 220 LDPAK 2SK1620 — 150 ±20 10 50 0.12 0.15 7.0 70 110 1200 2SK1621 — 250 7 0.4 0.55 4.5 50 120 820 TO-220AB 2SK740 — 150 ±20 10 50 0.12 0.15 7.0 70 110 1200 2SK2590 — 200 10 50 0.33 0.45 4.5 65 85 700 2SK741 — 250 7 0.4 0.55 4.5 50 120 820 TO-220FM 2SJ410 — –200 ±20 –6 30 0.7 0.85 3.5 57 130 920 2SK1957 — 200 7 30 0.33 0.45 4.5 65 85 700 2SK2212 — 200 10 30 0.24 0.3 6 98 145 1000 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID ≈ 1/2 ID max (DC) 6

SERIES LINEUP 2.4 Power MOS FET DIII Series 1. DIII-L Series Table 2-5 Typical DIII-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) 4 V RDS(on)*2 (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs| ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) UPAK 2SJ244 –12 ±7 –2 1 0.5 0.7 — — 1.8 365 1450 130 2SK1579 12 2 1 0.25 0.35 — — 2.5 500 1500 110 2SK1772 30 ±20 1 1 0.6 0.85 0.4 0.6 1.0 25 70 85 2SK1697 60 0.5 1 1.8 2.5 1.3 1.7 0.38 12 32 30 2SK1698 100 0.3 1 4.5 6.5 3.5 4.5 0.35 6 32 35 2SK1764 60 2 1 0.4 0.6 0.3 0.45 1.7 18 80 140 TO-92 2SK1336 60 ±20 0.3 0.4 1.8 2.5 1.3 1.7 0.35 6 34 33 2SK1337 100 0.3 0.4 4.0 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 DPAK 2SJ234 –30 ±20 –2.5 10 0.5 0.7 0.3 0.4 1.8 32 157 245 2SJ246 –30 –7 20 0.21 0.31 0.12 0.17 5.0 65 270 660 2SJ182 –60 –3 20 0.35 0.50 0.28 0.4 2.7 35 245 425 2SJ245 –60 –5 20 0.28 0.38 0.2 0.25 3.7 57 260 610 2SK973 60 2 10 0.4 0.5 0.25 0.35 2.0 19 120 240 2SK974 60 3 20 0.2 0.25 0.15 0.18 4.0 30 255 400 2SK1299 100 3 20 0.3 0.45 0.25 0.35 4.0 40 220 400 2SK1254 120 3 20 0.35 0.55 0.30 0.40 4.0 25 195 420 LDPAK 2SJ214 –60 ±20 –10 40 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ219 –15 50 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ220 –20 75 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SJ409 –100 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1860 2SK1648 60 15 40 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK1622 25 50 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1623 100 20 50 0.085 0.12 0.065 0.085 16.0 112 450 1300 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: RDS(on): VGS = 4 V, 10 V, ID ≈ 1/2 ID max |yfs|: VDS = 10 V, ID ≈ 1/2 ID max 7

SERIES LINEUP Table 2-5 Typical DIII-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs| ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) TO-220AB 2SJ172 –60 ±20 –10 40 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ173 –15 50 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ174 –20 75 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SK970 60 10 30 0.17 0.22 0.12 0.15 6.0 60 230 400 2SK971 15 40 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK972 25 50 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1296 30 75 0.03 0.04 0.024 0.028 27.0 145 615 2250 2SK1300 100 10 40 0.25 0.35 0.2 0.25 7.0 65 240 525 2SK1301 15 50 0.13 0.18 0.10 0.13 11.0 80 280 860 2SK1302 20 50 0.085 0.12 0.065 0.085 16.0 112 450 1300 2SJ247 –100 –8 40 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ221 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1800 TO-220FM 2SJ175 –60 ±20 –10 25 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ176 –15 30 0.13 0.17 0.09 0.11 9.5 135 380 1400 2SJ177 –20 35 0.09 0.13 0.065 0.085 13.0 140 580 1850 2SK1093 60 10 20 0.17 0.22 0.12 0.15 6.0 60 230 400 2SK1094 15 25 0.075 0.095 0.055 0.065 12.0 80 300 860 2SK1095 25 30 0.05 0.06 0.033 0.04 20.0 145 450 1400 2SK1305 100 10 25 0.25 0.35 0.2 0.25 7.0 65 240 525 2SK1306 15 30 0.13 0.18 0.10 0.13 11.0 80 280 860 2SK1307 20 35 0.085 0.12 0.065 0.085 16.0 112 450 1300 2SK2202 120 7 20 0.35 0.55 0.3 0.4 5.0 59 205 420 2SJ248 –100 –8 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 –20 35 0.16 0.22 0.12 0.16 12.0 130 490 1800 2SJ350 –120 –6 20 0.7 0.9 0.5 0.7 5.0 56 250 900 TO-220CFM 2SJ443 –60 ±20 –20 75 0.16 0.22 0.12 0.16 12.0 130 490 1800 TO-3P 2SK1297 60 ±20 40 100 0.02 0.025 0.015 0.018 35.0 200 1050 3600 2SJ215 –60 –35 125 0.07 0.09 0.045 0.06 18.0 195 780 2400 2SJ217 –45 150 0.045 0.06 0.033 0.042 25.0 265 1120 3800 2SK1303 100 30 100 0.06 0.09 0.05 0.06 22.0 135 585 1750 2SK1304 40 100 0.03 0.04 0.025 0.03 35.0 195 1030 3500 TO-3PFM 2SK1298 60 ±20 40 50 0.02 0.025 0.015 0.018 35.0 200 1050 3600 2SJ216 –60 –35 50 0.07 0.09 0.045 0.06 18.0 195 780 2400 2SJ218 –45 60 0.045 0.06 0.033 0.042 25.0 265 1120 3800 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: RDS(on): VGS = 4 V, 10 V, ID ≈ 1/2 ID max |yfs|: VDS = 10 V, ID ≈ 1/2 ID max 8

SERIES LINEUP 2. DIII-H Series features Table 2-6 Typical DIII-H Series Characteristics Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) DPAK 2SK1838 250 ±30 1 10 5.5 8.0 0.5 11 15 60 2SK1151 450 1.5 20 3.5 5.5 1.0 20 30 160 2SK1152 500 4.0 6.0 2SK1880 600 6.5 8.0 1.4 35 65 250 2SK2059 600 3 20 3.8 5.0 1.2 33 95 295 LDPAK 2SK1636 250 ±30 15 75 0.22 0.27 10 109 170 1250 2SK1869 350 7 50 0.6 0.8 5.0 60 100 635 2SK1313 450 5 50 1.0 1.4 4.0 35 80 640 2SK1314 500 1.2 1.5 2SK1540 450 7 60 0.6 0.8 6.5 70 135 1050 2SK1541 500 0.7 0.9 2SK1315 450 8 60 0.55 0.7 7.5 72 145 1150 2SK1316 500 0.6 0.8 2SK1618 600 3 30 3.8 5.0 2.0 33 95 295 2SK1624 4 50 1.8 2.4 3.5 38 95 600 2SK1625 7 75 0.9 1.3 6.5 65 150 1180 2SK1647 900 2 50 5.0 7.0 1.5 45 110 425 2SK1528 4 60 3.0 4.0 2.7 75 180 740 TO-220AB 2SK1667 250 ±30 7 50 0.4 0.55 5.0 68 102 690 2SK1761 12 75 0.23 0.35 8.0 85 144 1100 2SK1400 300 7 50 0.5 0.7 5.0 60 100 635 2SK1400A 350 0.6 0.8 5.0 2SK1153 450 3 30 2.0 2.8 2.5 27 50 330 2SK1154 500 2.2 3.0 2SK1155 450 5 50 1.0 1.4 4.0 35 80 640 2SK1156 500 1.2 1.5 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 9

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-220AB 2SK1157 450 ±30 7 60 0.6 0.8 6.5 70 135 1050 2SK1158 500 0.7 0.9 2SK2408 500 0.7 0.9 6.0 70 148 1100 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500 0.6 0.8 2SK1402 600 4 50 1.8 2.4 3.5 38 95 600 2SK1402A 650 2.0 2.6 2SK2328 650 7 75 1.0 1.4 6.5 65 150 1180 2SK1809 600 5 60 1.1 1.5 5.0 57 160 1000 2SK1338 900 2 50 5.0 7.0 1.5 45 110 425 2SK1807 4 60 3.0 4.0 2.7 75 180 740 TO-220FM 2SK1668 250 ±30 7 30 0.4 0.55 5.0 68 102 690 2SK1762 12 35 0.23 0.35 8.0 85 144 1100 2SK2345 350 6 35 0.6 0.8 4.5 50 95 635 2SK1862 450 3 20 2.0 2.8 2.5 27 50 330 2SK1863 500 2.2 3.0 2SK1626 450 5 35 1.0 1.4 4.0 35 80 640 2SK1627 500 1.2 1.5 2SK1566 450 7 0.6 0.8 6.5 70 135 1050 2SK1567 500 0.7 0.9 2SK1572 600 3 25 3.8 5.0 2.0 33 95 295 2SK1637 4 35 1.8 2.4 3.5 38 95 600 2SK2422 650 2.0 2.6 2SK1404 600 5 1.1 1.5 5.0 57 160 1000 2SK1808 900 4 3.0 4.0 2.7 75 180 740 TO-220 2SK2425 250 ±30 7 30 0.4 0.55 5.0 68 102 690 CFM 2SK2426 250 12 35 0.23 0.35 8.0 85 144 1100 2SK2431 450 3 25 2.0 2.8 2.5 27 50 330 2SK2114 450 5 35 1.0 1.4 4.0 35 80 640 2SK2115 500 1.2 1.5 2SK2116 450 7 0.6 0.8 6.5 70 135 1050 2SK2117 500 0.7 0.9 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 10

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-220 2SK2423 450 ±30 7 35 0.55 0.7 7.5 72 145 1150 CFM 2SK2424 450 8 35 0.4 0.55 9.0 75 180 1450 2SK2591 500 8 35 0.45 0.60 9.0 75 180 1450 2SK2144 600 3 25 3.8 5.0 2.0 33 95 295 2SK2097 4 35 1.8 2.4 3.5 38 95 600 2SK2118 5 35 1.1 1.5 5.0 57 160 1000 TO-3P 2SK2007 250 ±30 20 100 0.12 0.15 14 155 290 2340 2SK1669 30 125 0.075 0.095 20 215 420 3100 2SK1671 0.075 0.095 20 215 380 3000 2SK2075 20 100 0.105 0.13 14 155 290 2340 2SK1401 300 8 100 0.25 0.35 9.5 95 155 1250 2SK1401A 350 0.30 0.40 2SK1161 450 10 0.6 0.8 7.0 75 135 1050 2SK1162 500 0.7 0.9 2SK1163 450 11 0.55 0.7 8.0 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 500 0.45 0.6 2SK1167 450 15 0.25 0.36 13 140 220 2050 2SK1168 500 0.3 0.4 2SK1169 450 20 120 0.2 0.25 16 147 290 2800 2SK1170 500 0.22 0.27 2SK1515 450 10 100 0.6 0.8 7.0 80 150 1100 2SK1516 500 0.7 0.9 2SK2568 500 12 100 0.45 0.60 (10) (100) (215) (1550) 2SK1517 450 20 120 0.20 0.25 16 165 345 3050 2SK1518 500 0.22 0.27 2SK1403 600 8 100 0.9 1.3 6.5 65 150 1180 2SK1403A 650 1.0 1.4 2SK1968 600 12 0.68 0.88 10 95 210 1800 2SK1573 15 120 0.35 0.5 14 140 340 3150 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 11

SERIES LINEUP Table 2-6 Typical DIII-H Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) RDS(on) (Ω) Part VDDS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (pF) TO-3P 2SK1339 900 ±30 3 80 5.0 7.0 1.9 50 105 425 2SK1340 5 100 3.0 4.0 3.2 85 180 740 2SK1341 6 2.0 3.0 3.7 100 225 980 2SK1342 8 1.2 1.6 5.5 160 315 1730 2SK1933 10 150 0.9 1.2 7 170 455 2620 2SK1773 1000 5 100 1.5 2.0 5.0 135 345 1700 2SK1934 8 150 1.2 1.6 6 170 505 2690 TO-3PFM 2SK2008 250 ±30 20 60 0.12 0.15 14 155 290 2340 2SK1670 30 0.075 0.095 20 215 420 3100 2SK1831 450 10 50 0.6 0.8 7.0 75 135 1050 2SK1832 500 0.7 0.9 2SK1328 450 12 60 0.40 0.55 10 90 180 1450 2SK1329 500 0.45 0.60 2SK1405 600 15 0.35 0.50 14 155 340 3150 2SK1859 900 6 2.0 3.0 3.7 100 225 980 2SK1775 8 1.2 1.6 5.5 160 315 1730 HDPAK 2SK2330 500 ±30 15 100 0.3 0.4 13 140 220 2050 2SK2174 500 20 120 0.22 0.27 16 147 290 2800 TO-3PL 2SK1947 250 ±30 50 200 0.047 0.06 30 345 620 5810 2SK1948 330 5830 2SK1519 450 30 0.11 0.15 25 235 615 5800 2SK1520 500 0.12 0.16 2SK1521 450 50 250 0.08 0.10 35 335 850 8700 2SK1522 500 0.085 0.11 2SK1628 450 30 200 0.2 0.25 20 172 300 2800 2SK1629 500 0.22 0.27 2SK1971 500 35 0.19 0.23 24 220 450 4320 2SK1526 450 40 250 0.11 0.15 30 235 580 5800 2SK1527 500 0.12 0.16 2SK1836 450 50 0.08 0.1 35 330 770 8150 2SK1837 500 0.085 0.11 Notes: 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on) max, ID = 1/2 ID max : Type with built-in high-speed diode (trr = 100 ns to 150 ns) 12

SERIES LINEUP 2.5 Power MOS FET DIV Series Features Main Applications • Low “on” resistance (30% less than DIII Series • DC/DC converter for same die area), P ch/N ch complementary Notebook PCs, wordprocessors, games, etc. • Low driving voltage • Compact motor drive 4 V: for direct driving of microcomputers and TTL Copiers, printers, FAX, etc. 2.5 V: for battery-driven (3 V) systems • Automotive • Strongly resistant to load surges (avalanche) Relays, solenoid drives, power steering, • Built-in diode highly resistant to diode breakdown power mirror, ABS inverter, etc. • Other uses Power tools, radio-controlled model motors, diode substitute, etc. Table 2-7 Typical DIV-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) *2 *2 Part VDSS VGSS ID Pch *1 4 V RDS(on) (Ω) 10 V RDS(on) (Ω) |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note MPAK 2SJ399 –30 ±20 –0.2 0.15 2.7 5.0 2.0 3.0 — 2700 16330 1.1 2SJ451*3 –20 –0.2 0.15 2.3 3.5 — — 0.23 850 5800 2.4 2SJ452*3 –50 –0.2 0.15 5.0 7.0 — — 0.19 1750 14000 1.1 2SK2373 30 0.2 0.15 1.4 2.5 1.0 1.4 — 175 1060 17.8 2SK2569*3 50 0.2 0.15 1.9 2.6 — — ( ) 130 1500 ( ) (2SK2570)*3 20 ±10 0.2 0.15 1.0 1.3 — — ( ) ( ) ( ) ( ) UPAK 2SJ317 –12 ±7 –2 1 0.28 0.35 — — 2 590 2350 60 2SJ361*3 –20 ±20 –2 1 0.85 1.5 0.28 0.4 0.3 2000 14330 3.2 2SJ363 –30 –2 1 0.6 0.75 0.35 0.45 2.0 9650 40800 2.1 2SJ278 –60 –1 1 0.8 1.2 0.7 0.83 1.0 15 60 180 2SJ450*3 –60 –1 1 0.85 1.2 — — 1.0 15 85 150 2SK2247 30 2 1 0.30 0.45 0.22 0.35 1.9 22 70 177 2SK2315*3 60 2 1 0.35 0.45 — — 1.8 21 85 173 TO-92M 2SJ386 –30 ±20 –3 0.9 0.55 0.8 0.3 0.4 1.7 36 105 177 DPAK 2SJ318 –20 ±20 –5 20 0.14 0.19 0.09 0.13 5.5 70 150 580 2SJ332 –10 20 0.09 0.14 0.05 0.08 9 83 190 730 2SJ333 –30 –7 20 0.16 0.2 0.12 0.15 6 60 220 750 2SJ387*3 –20 ±10 –10 20 0.05 0.07 — — 12 345 775 1170 2SJ388*3 –30 ±20 –10 20 0.12 0.2 0.06 0.08 8 75 490 970 2SK2084 20 7 20 0.058 0.075 0.04 0.053 9 75 180 800 2SJ279 –60 –5 20 0.20 0.27 0.17 0.2 5.0 50 200 690 2SJ389 –60 –10 30 0.14 0.2 0.1 0.135 8 100 365 910 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 13

SERIES LINEUP Table 2-7 Typical DIV-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note DPAK 2SK1949 60 ±20 5 20 0.15 0.2 0.12 0.15 5 70 110 390 2SK1950*3 3 10 0.3 0.45 0.2 0.25 10 60 160 350 2SK2329*3 30 ±10 10 20 0.03 0.04 — — 18 165 350 1250 2SK2334 60 ±20 20 30 0.055 0.07 0.04 0.055 15 104 305 980 2SK2418*3 20 ±10 7 20 0.04 0.05 — — 12 105 270 810 FP-8D HAT1001F*3 –20 ±10 –3.5 1 0.05 0.07 — — 8.0 265 790 1170 (EIAJ HAT1002F –30 ±20 –3.5 1 0.1 0.13 0.06 0.07 6.0 335 140 960 SOP-8) HAT1004F*3 –20 ±10 –2.5 1.5 0.1 0.12 — — 5.5 153 270 750 Pch×2 HAT1005F*3 –30 ±20 –3.5 1 0.095 0.13 0.07 0.09 6.0 135 220 840 HAT1006F –60 –2.5 1 0.14 0.2 0.1 0.14 5.5 225 190 910 HAT1007F –20 –3.5 1 0.1 0.15 0.06 0.08 5.0 193 140 730 HAT1008F –30 –2.5 1 0.12 0.2 0.075 0.12 4.5 179 110 670 HAT1009F –30 ±10 –2.5 1.5 0.12 0.16 — — 5.0 116 220 720 Pch×2 HAT2001F*3 30 5 1 0.035 0.045 — — 12.0 120 340 1250 HAT2002F 30 ±20 5 1 0.05 0.06 0.03 0.04 8.0 220 165 860 HAT2003F*3 30 ±10 2.5 1.5 0.1 0.15 — — 5.0 95 140 380 Nch×2 HAT2004F*3 15 3.5 1.5 0.055 0.07 — — 7.5 112 225 620 Nch×2 HAT2005F*3 20 4 1 0.05 0.065 — — 10.0 115 270 810 HAT2006F 60 ±20 4 1 0.065 0.075 0.045 0.06 6.5 185 160 860 HAT2007F 30 4 1 0.065 0.11 0.04 0.07 5.0 125 100 680 HAT2008F*3 20 ±10 3.5 1.5 0.055 0.075 — — 7.5 103 210 620 Nch×2 HAT2009F*3 30 3.5 1.5 0.065 0.08 — — 7.0 97 200 610 Nch×2 HAT2010F 30 ±20 3.5 1.5 0.09 0.13 0.06 0.075 4.5 110 85 470 Nch×2 HAT3001F*3 30 ±10 2.5 1.5 0.1 0.15 — — 4.0 95 140 380 Nch/ –30 –2.5 0.12 0.16 — — 5.0 116 220 720 Pch in TO-220AB 2SK2205 –30 ±20 45 75 0.016 0.022 0.011 0.015 38 260 795 3600 2SK2175 60 15 30 0.13 0.18 0.1 0.13 8 75 180 390 2SJ290 –60 –15 50 0.09 0.12 0.075 0.095 12 105 390 1450 2SJ291 –20 60 0.072 0.095 0.055 0.065 17 155 500 2200 2SJ292 –30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1911 40 75 0.023 0.028 0.018 0.022 35 180 850 3530 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 14

SERIES LINEUP Table 2-7 Typical DIV-L Series Characteristics (cont) Maximum Ratings Electrical Characteristics (typ) *2 4 V RDS(on) (Ω) 10 V RDS(on)*2 (Ω) Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note TO-220FM 2SJ390 –60 ±20 –10 25 0.13 0.19 0.09 0.12 9 78 285 1060 2SJ293 –15 30 0.09 0.15 0.075 0.095 12 105 390 1450 2SJ294 –20 35 0.075 0.095 0.055 0.065 17 155 500 2200 2SJ295 –30 35 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1951 60 25 35 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1952 40 35 0.023 0.028 0.018 0.022 35 180 850 3530 TO-220 2SJ321 –60 ±20 –15 30 0.09 0.15 0.075 0.095 12 105 390 1450 CFM 2SJ322 –20 35 0.075 0.095 0.055 0.065 17 150 500 2200 2SJ323 –30 35 0.045 0.06 0.03 0.04 25 130 370 3300 2SK2206 30 45 35 0.016 0.022 0.011 0.015 38 260 795 3600 2SK2390 60 12 20 0.11 0.15 0.075 0.09 8 65 170 450 2SK2346 20 25 0.05 0.07 0.036 0.05 17 105 310 1130 2SK2119 25 30 0.043 0.06 0.03 0.04 21 130 370 1450 2SK2120 40 35 0.023 0.028 0.018 0.022 35 183 670 3530 LDPAK 2SK2204 30 ±20 45 75 0.016 0.022 0.011 0.015 38 260 795 3600 2SJ296 –60 –15 50 0.09 0.15 0.075 0.095 12 105 390 1470 2SJ384*3 –15 50 0.12 0.19 0.07 0.1 14 91 540 2170 2SJ297 –20 60 0.075 0.095 0.055 0.065 17 155 500 2200 2SJ280 –30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK2322*3 60 15 50 0.08 0.15 0.04 0.05 14 220 250 1600 2SK1918 25 50 0.043 0.06 0.03 0.04 21 130 370 1450 2SK1919 40 75 0.023 0.028 0.018 0.022 35 180 850 3530 TO-3P 2SK2096 60 ±20 45 100 0.023 0.028 0.018 0.022 35 183 670 3530 2SK2121 50 100 0.009 0.013 0.007 0.01 65 360 1955 8330 HDPAK 2SJ408 –60 ±20 –50 100 0.02 0.028 0.015 0.02 50 395 1770 8200 TO-3PFM 2SK2203 60 ±20 50 60 0.009 0.013 0.007 0.01 65 360 1955 8330 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 15

SERIES LINEUP 2.6 Power MOS FET DV Series Features • Super Low “on” resistance; 50% Less RDS(on) than DIV Series for same die area. • Low driving Gate voltage 4 V and 2.5 V Gate Drive capability for direct driving of microcomputers and TTL, and 3 V Battery source. • Low Gate charge capability: 50% Less Qg than DIV Series for same RDS(on) characteristics. • Pch/Nch complementary • High avalanche destruction capability Table 2-8 Typical DV-L Series Characteristics Maximum Ratings Electrical Characteristics (typ) 4 V RDS(on) (Ω)*2 10 V RDS(on)*2 Part VDSS VGSS ID Pch*1 |yfs|*2 ton toff Ciss Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) (pF) Note FP-8DA (HAT1020R) –30 ±20 –4.5 2 0.09 0.13 0.05 0.07 (8.0) (235) (95) (670) (JEDEC (HAT1023R)*3 –20 ±10 –6.5 2 0.023 0.04 — — (10.0) (320) (750) (1200) SOP-8) (HAT1024R) –30 ±20 –2.5 2 0.25 0.4 0.18 0.25 (4.0) (80) (35) (250) Pch×2 (HAT1025R)*3 –20 ±10 –4 2 0.09 0.11 — — (6.0) (110) (210) (530) Pch×2 (HAT2016R) 30 ±20 5 2 0.055 0.08 0.04 0.05 (6.5) (115) (75) (350) Nch×2 (HAT2020R) 30 ±20 7 2 0.04 0.05 0.026 0.03 (10.0) (180) (125) (570) (HAT2022R) 30 ±20 10 2 0.016 0.02 0.011 0.0135 (18.0) (255) (260) (1250) (HAT3004R) 30 ±20 3.5 2 0.11 0.15 0.08 0.1 (3.0) (70) (45) (180) Nch/ –30 –2.5 0.2 0.4 0.13 0.25 (3.0) (70) (45) (250) Pch in TO-220CFM 2SK2529 60 ±20 50 35 10 m 16 m 7m 10 m 55 265 830 3550 LDPAK 2SK2553 60 ±20 50 75 10 m 16 m 7m 10 m 55 265 830 3550 TO-3P 2SK2586 60 ±20 60 125 10 m 16 m 7m 10 m 60 295 850 3550 2SK2554 60 ±20 75 150 5.8 m 10 m 4.5 m 6m 80 480 2100 7700 Notes: ( ) indicates a product under development, and subject to specification changes without notice. 1. Allowable value at TC = 25°C 2. Test conditions: VDS > ID × RDS(on), ID = 1/2 ID max 3. 2.5-V driving 16

SERIES LINEUP 2.7 Power MOS FET Array Series Table 2-9 Typical Characteristics of Power MOS FET Array Series Maximum Ratings Electrical Characteristics (typ) Equivalent Part VDSS VGSS ID Pch* 4 V RDS(on) (Ω) 10 V RDS(on) (Ω) |yfs| ton toff Single Package Number (V) (V) (A) (W) Typ Max Typ Max (S) (ns) (ns) Device SP-10 (A) 4AK17 60 ±20 10 28 0.04 0.065 0.033 0.045 17 110 470 2SK972 4AK15 8 0.075 0.095 0.055 0.07 12 80 300 2SK971 4AK16 5 0.17 0.25 0.12 0.18 6 60 230 2SK970 4AK18 2.5 0.4 0.53 0.25 0.38 2 19 120 2SK973 (B) 4AM13 60 ±20 3 28 0.35 0.5 0.25 0.35 2.5 24 120 2SK973 –60 –3 0.4 0.55 0.28 0.40 2.5 30 260 2SJ182 4AM11 60 ±20 5 28 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –5 0.20 0.27 0.15 0.2 5.0 43 265 2SJ172 4AM12 60 ±20 8 28 0.08 0.11 0.06 0.075 9.0 55 300 2SK971 –60 –8 0.135 0.18 0.09 0.12 7.5 100 400 2SJ173 (A) 4AK20 100 ±20 5 28 0.25 0.35 0.2 0.25 5.0 40 250 2SK1300 4AK21 100 ±20 8 28 0.09 0.125 0.07 0.09 10 72 440 2SK1302 4AK22 120 ±20 3 28 0.35 0.55 0.3 0.4 3.5 25 200 2SK1254 SP-12TA (E) 4AM14 60 ±20 8 32 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –8 0.20 0.27 0.15 0.20 5.0 43 265 2SJ172 (D) 6AM12 60 ±20 7 42 0.19 0.24 0.13 0.17 5.5 50 230 2SK970 –60 –7 0.20 0.27 0.15 0.20 6.0 58 265 2SJ172 6AM13 60 ±20 10 42 0.08 0.11 0.06 0.075 9.5 60 290 2SK971 –60 –10 0.12 0.18 0.09 0.12 8.0 115 410 2SJ173 6AM14 60 ±20 7 42 0.14 0.2 0.11 0.14 6.5 100 360 — –60 –7 0.12 0.16 0.095 0.13 8.0 85 420 — SP-12 (G) 4AJ11 –60 ±20 –8 28 0.12 0.17 0.09 0.13 7.7 135 380 2SJ173 (F) 4AK26 60 10 0.056 0.075 0.045 0.06 12 110 470 2SK972 (E) 4AM16 60 8 36 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –8 0.2 0.27 0.15 0.2 5.0 43 265 2SJ172 (D) 6AM11 60 ±20 5 36 0.18 0.24 0.13 0.17 4.5 35 245 2SK970 –60 –5 0.20 0.27 0.15 0.20 5.0 43 265 2SJ172 SP-10 (A) 4AK25 60 ±20 1.5 24 0.47 0.60 0.35 0.45 1.5 15 80 2SK975 SP-12TA (F) 4AK23 100 ±20 5 32 0.25 0.40 0.20 0.30 5.5 37 245 2SK1300 (E) 4AM15 200 4 32 — — 0.33 0.50 2.5 50 105 2SK1957 –200 –4 — — 0.70 0.90 3.0 70 145 — Note: * Allowable value at TC = 25°C 17

SERIES LINEUP Maximum channel dissipation ambient Maximum channel dissipation case temperature curve temperature curve 6 30 Total allowable dissipation Pch (W) Total allowable dissipation Pch (W) (Each element assumed to (Each element assumed to 5 have identical loss) have identical loss) 4-element operation 4-element operation 4 20 3-element operation 3-element operation 2-element operation 2-element operation 3 1-element operation 1-element operation 2 10 1 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Ambient temperature Ta (°C) Case temperature TC (°C) 18

SERIES LINEUP Type Equivalent Circuit SP-10 N ch 4-element (A) 3 5 7 9 2 4 6 8 1 10 N/P complementary (B) 3 5 7 9 2 4 6 8 1 10 N ch P ch SP-12 (E) 2 4 9 10 • SP-12TA 1 5 8 12 3 6 7 11 N ch P ch (D) 5 12 4 6 11 P ch 3 7 10 2 8 9 N ch 1 (F) 2 4 9 10 1 5 8 12 3 6 7 11 N ch N ch (G) 2 4 9 10 1 5 8 12 3 6 7 11 P ch P ch 19

SERIES LINEUP 2.8 Power MOS FET Modules Table 2-10 Typical Characteristics of Power MOS FET Modules Maximum Ratings* Electrical Characteristics (typ) RDS(on) (Ω) VDSS VGSS ID Pch |yfs| ton toff trr Equivalent Package Part Number (V) (V) (A) (W) Typ Max (S) (ns) (ns) (ns) Circuit F PM45302F 450 ±20 30 200 0.13 0.2 25 580 900 200 A PM50302F 500 0.15 0.2 C PM45502C 450 ±20 50 300 0.08 0.12 40 850 1400 200 A PM50502C 500 0.09 0.12 J PM4550J 450 ±30 50 250 0.14 0.18 30 315 390 130 B PM5050J 500 0.14 0.18 PM4575J 450 ±30 75 300 0.1 0.12 45 410 685 130 B PM5075J 500 0.1 0.12 K PM50100K 500 ±30 100 400 0.08 0.10 55 890 1020 140 B PM50150K 500 150 500 0.06 0.08 80 1100 1590 140 PM45100K 450 100 400 0.08 0.10 55 890 1020 140 PM45150K 450 150 500 0.06 0.08 80 1100 1590 140 Notes: * Per transistor : Type with built-in high-speed diode Internal equivalent circuit A B 20

SERIES LINEUP 2.9 Line-up of Each Package Outline for Same Die 1. DI Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-3P TO-3PFM LDPAK HDPAK 1500 2.5 9 12 2SK1317 2SK2225 2SK2278 2. DII Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-3P TO-3PFM LDPAK HDPAK 150 10 0.12 0.15 2SK740 2SK1620 250 7 0.4 0.55 2SK741 2SK1621 3. DIII-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-92 TO-92M TO-220AB TO-220FM TO-3P TO-3PFM UPAK DPAK LDPAK 60 0.5 1.3 1.7 2SK1336 2SK1697 60 1.5 0.3 0.4 2SK975 2SK1764 60 10 0.12 0.15 2SK970 2SK1093 2SK974 60 15 0.055 0.065 2SK971 2SK1094 2SK1648 60 25 0.033 0.04 2SK972 2SK1095 2SK1622 60 40 0.015 0.018 2SK1297 2SK1298 100 0.3 3.5 4.5 2SK1337 2SK1698 100 10 0.2 0.25 2SK1300 2SK1305 100 15 0.1 0.13 2SK1301 2SK1306 100 20 0.065 0.085 2SK1302 2SK1307 2SK1623 –60 –10 0.13 0.18 2SJ172 2SJ175 2SJ214 –60 –15 0.09 0.11 2SJ173 2SJ176 2SJ219 –60 –20 0.065 0.085 2SJ174 2SJ177 2SJ220 –60 –35 0.045 0.06 2SJ215 2SJ216 –60 –45 0.033 0.042 2SJ217 2SJ218 –100 –8 0.25 0.3 2SJ247 2SJ248 –100 –20 0.12 0.16 2SJ221 2SJ222 2SJ409 21

SERIES LINEUP 4. DIII-H Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID (V) (A) Typ Max TO-220AB TO-220FM TO-220CFM TO-3P TO-3PFM TO-3PL DPAK LDPAK HDPAK 250 7 0.4 0.55 2SK1667 2SK1668 2SK2425 250 12 0.23 0.35 2SK1761 2SK1762 2SK2426 250 20 0.12 0.15 2SK2007 2SK2008 250 30 0.075 0.095 2SK1669 2SK1670 350 7 0.6 0.8 2SK1400A 2SK2345 2SK1869 350 15 0.3 0.4 2SK2582 2SK1401A 450 3 2 2.8 2SK1153 2SK1862 2SK2431 500 3 2.2 3 2SK1154 2SK1863 450 5 1 1.4 2SK1155 2SK1626 2SK2114 2SK1313 500 5 1.2 1.5 2SK1156 2SK1627 2SK2115 2SK1314 450 7 0.6 0.8 2SK1157 2SK1566 2SK2116 2SK1161 2SK1831 2SK1540 500 7 0.7 0.9 2SK1158 2SK1567 2SK2117 2SK1162 2SK1832 2SK1541 450 8 0.55 0.7 2SK1159 2SK2423 2SK1163 2SK1315 500 8 0.6 0.8 2SK1160 2SK1164 2SK1316 450 12 0.4 0.55 2SK2424 2SK1165 2SK1328 500 12 0.45 0.6 2SK2591 2SK1166 2SK1329 450 15 0.25 0.36 2SK1167 500 15 0.3 0.4 2SK1168 2SK2330 450 20 0.2 0.25 2SK1169 2SK1628 500 20 0.22 0.27 2SK1170 2SK1629 2SK2174 500 10 0.7 0.9 2SK2408 2SK1516 600 3 3.8 5 2SK1572 2SK2144 2SK2059 2SK1618 600 4 1.8 2.4 2SK1402 2SK1637 2SK2097 2SK1624 600 5 1.1 1.5 2SK1809 2SK1404 2SK2118 600 7 0.9 1.3 2SK1403 2SK1625 650 4 2 2.6 2SK1402A 2SK2422 650 7 1 1.4 2SK2328 2SK2416 2SK1403A 900 3 5 7 2SK1338 2SK1339 2SK1647 900 5 3 4 2SK1807 2SK1808 2SK1340 2SK1528 900 6 2 3 2SK1341 2SK1859 900 8 1.2 1.6 2SK1342 2SK1775 22

SERIES LINEUP 5. DIV-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID TO-126 TO-220 TO-220 TO-220 TO-3 (V) (A) Typ Max FM AB FM CFM TO-3P PFM (SOP-8) DPAK LDPAK HDPAK –20 –7 0.05 0.07 HAT1001F 2SJ387 –60 –15 0.075 0.095 2SJ290 2SJ293 2SJ321 2SJ296 –60 –20 0.05 0.065 2SJ291 2SJ294 2SJ322 2SJ297 –60 –30 0.033 0.043 2SJ292 2SJ295 2SJ323 2SJ280 30 10 0.03 0.04 HAT2001F 2SK2329 30 45 0.011 0.015 2SK2205 2SK2206 2SK2204 60 5 0.12 0.15 2SK2175 2SK1949 60 25 0.03 0.04 2SK1910 2SK1951 2SK2119 2SK1918 60 40 0.018 0.022 2SK1911 2SK1952 2SK2120 2SK2096 2SK1919 60 50 0.007 0.01 2SK2121 2SK2203 6. DV-L Series Maximum Ratings RDS(on) (Ω) Insertion Type Surface Mount Type VDSS ID TO-126 TO-220 TO-220 TO-220 TO-3 (V) (A) Typ Max FM AB FM CFM TO-3P PFM (SOP-8) DPAK LDPAK HDPAK 60 50 0.007 2SK2529 2SK2553 2SK2586 23

SERIES LINEUP Table 2-11 Power MOS FET Packages Pack- V DSS ID R DS(on) Pack- V DSS ID R DS(on) Pack- V DSS ID R DS(on) Pack- V DSS I D R DS(on) age (V) (A) ( Ω) age (V) (A) ( Ω) age (V) (A) ( Ω) age (V) (A) ( Ω) 60 to 2.5 to 4.5 m to TO-3P 60 to 12 to 0.015 to TO- 250 to 8 to 0.08 to SP-10 60 2.5 to 0.033 TO-3P SP-12 1500 75 9.0 ·FM 1500 50 9.0 3PL 1500 50 1.9 SP-12TA 100 10 to 0.25 SP-12 SP-10 SP-12TA 60 to 1 to 0.011 TO-220 30 to 2 to 7m 20 to 2 to 0.03 60 to 3 to 7 m to TO-220 DPAK LDPAK 900 30 to 5.0 FM/CFM 900 50 to 5.0 60 20 to 25 900 50 3.0 TO-220FM TO-220CFM TO- 30 60 to 1.5 to 12 to 0.5 to 0.28 to 450 to 0.13 to 1.5 0.3 TO-92 0.3 UPAK F 30 92M 60 100 3.5 200 2.0 8.0 500 0.15 450 to 0.08 to 60 to 2.5 to 0.015 to 20 to 1.4 to 20 to 2.5 to 0.012 to C 50 HDPAK MPAK 0.2 SOP-8 500 0.09 1500 20 12 50 5.0 60 10 0.2 FP-8D EIAJ SOP-8 FP-8DA JEDEC SOP-8 24

Section 6. Standard Lead Forming Specification TO-220FM Unit : mm B D 10.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 10.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 0.6 17.0 ± 0.3 12.0 ± 0.3 2.0 2.5 4.5 10.5 min 11.5 min 7.0 min 5.0 6.5 5.0 F J 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 0.6 12.0 ± 0.3 16.8 4.4 10.5 min 13.0 min 3.0 min 3.8 G 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 0.6 17.0 ± 0.3 12.0 ± 0.3 2.0 7.5 min 4.0 2.54 1

STANDARD LEAD FORMING SPECIFICATION TO-220 Unit : mm A J 3.0 max φ 3.6 +0.1 3.0 max 11.5 max φ 3.6 –0.08 +0.1 11.5 max 4.8 max –0.08 4.8 max 9.8 max 9.8 max 1.27 1.27 7.6 min 1.5 max 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 14.8 14.8 9.0 min 6.0 min B F 3.0 max 11.5 max φ 3.6 +0.1 3.0 max 11.5 max φ 3.6 +0.1 9.8 max –0.08 4.8 max 1.27 9.8 max –0.08 4.8 max 1.5 max 1.27 1.5 max 7.6 min 7.6 min 6.3 min 6.3 min 15.3 max 15.3 max 15.24 14.8 2.5 9.0 min 5.0 min P N φ 3.6 +0.1 3.0 max 11.5 max –0.08 4.8 max 3.0 max 9.8 max 11.5 max φ 3.6 +0.1 1.27 7.6 min 1.5 max 9.8 max –0.08 4.8 max 1.27 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 16.0 4.0 10.5 min 12.0 min 5.6 Center lead 2

STANDARD LEAD FORMING SPECIFICATION TO-220 (cont) Unit :mm E D φ 3.6 +0.1 3.0 max φ 3.6 +0.1 11.5 max 3.0 max 11.5 max –0.08 –0.08 9.8 max 4.8 max 9.8 max 4.8 max 1.27 1.27 7.6 min 1.5 max 7.6 min 1.5 max 6.3 min 6.3 min 15.3 max 15.3 max 4.0 4.0 10.5 min 10.5 min Center lead 5.6 Center lead 5.6 C L φ 3.6 +0.1 3.0 max 11.5 max –0.08 φ 3.6 +0.1 3.0 max 11.5 max 9.8 max 4.8 max 1.27 –0.08 9.8 max 4.8 max 7.6 min 1.5 max 1.27 7.6 min 1.5 max 6.3 min 6.3 min 10.5 min 15.3 max 2.4 3.0 9.0 min 6.0 min 10.0 7.35 3

STANDARD LEAD FORMING SPECIFICATION TO-3P Unit : mm A B φ 3.2 ± 0.2 5.0 ± 0.3 16.0 max 5.0 max φ 3.2 ± 0.2 1.0 1.5 5.0 ± 0.3 5.0 max 0.5 16.0 max 1.0 1.5 0.5 14.9 ± 0.2 20.1 max 14.9 ± 0.2 20.1 max 2.0 18.0 1.6 1.4 max 8.5 14.3 min 17.5 min 2.0 17.0 min 5.45 F G φ 3.2 ± 0.2 φ 3.2 ± 0.2 5.0 ± 0.3 5.0 ± 0.3 16.0 max 5.0 max 5.0 max 16.0 max 1.0 1.0 1.5 1.5 0.5 0.5 14.9 ± 0.2 20.1 max 14.9 ± 0.2 20.1 max 2.0 2.0 1.6 1.6 7.0 min 7.0 min 1.4 max 12.8 min 1.4 max 14.7 min 15.3 min 13.1 min 2.0 2.0 9.0 9.4 4

STANDARD LEAD FORMING SPECIFICATION TO-3PFM Unit : mm F-1 F-5 φ 3.2 +0.4 –0.2 φ 3.2 +0.4 –0.2 5.0 ± 0.3 5.0 ± 0.3 16.0 max 19.9 ± 0.3 5.8 max 16.0 max 5.8 max 19.9 ± 0.3 4.0 4.0 7.0 8.5 17.0 3.1 20.1 5.9 5.45 9.0 F-6 φ 3.2 +0.4 –0.2 5.0 ± 0.3 16.0 max 5.8 max 19.9 ± 0.3 4.0 7.0 17.4 19.2 5.6 3.8 5

Section 7. Package Information Outline Dimensions Unit : mm • TO-3P • TO-3PFM φ 3.2 ± 0.2 0.4 φ 3.2 + 0.2 – 16.0 Max 5.0 ± 0.3 5.0 Max 5.8 Max 16.0 Max 1.0 1.5 5.0 ± 0.3 0.5 19.9 ± 0.3 20.1 Max 14.9 ± 0.2 5.0 2.7 0.3 2.0 1.6 4.0 1.4 Max 2.6 2.0 2.8 1.4 Max 21.0 ± 0.5 18.0 ± 0.5 1.6 3.2 1.4 Max 1.0 ± 0.2 0.6 ± 0.2 0.6 ± 0.2 1.0 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 5.45 ± 0.5 5.45 ± 0.5 • TO-3PL • TO-92 (1) 5.2 Max 4.2 Max 6.0 ± 0.2 20.0 ± 0.3 5.0 ± 0.2 5.2 Max 3.3 ± 0.2 26.0 ± 0.3 12.7 Min 0.60 Max 0.7 2.3 Max 0.5 1.6 0.5 Max 0.55 Max 1.4 20.0 ± 0.6 3.0 2.5 ± 0.3 2.2 0.25 1.2 + 0.1 – 5.45 ± 0.5 5.45 ± 0.5 0.25 0.6 + 0.1 – 2.8 ± 0.2 1.0 1.27 3.8 7.4 2.54 6

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • TO-92MOD • TO-220AB 5.2 Max 4.2 Max 11.5 Max 8.5 Max 3.0 Max 9.8 Max φ 3.6 + 0.08 – 0.1 4.8 Max 1.27 7.6 Min 1.5 Max 6.3 Min 15.3 Max 18.5 ± 0.5 0.70 Max 0.75 Max 10.1 Min 0.7 2.3 Max 0.60 Max 0.55 Max 0.5 Max 1.5 Max 12.7 Min 0.5 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.7 Max 5.1 ± 0.5 1.27 2.54 • TO-220FM • TO-220CFM 2.8 ± 0.2 10.0 ± 0.3 2.52 ± 0.2 7.0 ± 0.3 φ 3.2 ± 0.2 10.0 ± 0.3 φ 3.2 ± 0.2 2.7 ± 0.2 0.6 17.0 ± 0.3 15.0 ± 0.3 5.0 ± 0.3 12.0 ± 0.3 12.0 ± 0.3 1.2 ± 0.2 1.0 ± 0.2 2.0 ± 0.3 1.4 ± 0.2 4.45 ± 0.3 1.15 ± 0.2 4.5 ± 0.3 14.0 ± 1.0 13.6 ± 1.0 4.1 ± 0.3 2.7 2.5 ± 0.2 0.6 ± 0.1 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.7 ± 0.1 7

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • FP-8D (EIAJ SOP-8) • FP-8DA (JEDEC SOP-8) 5.25 Max 5.2 Max 5 4.55 Max 8 8 5 4.05 Max 1 4 1 4 2.00 Max 2.03 Max 0.05 0.20 + 0.02 1.75 Max 0.75 Max 6.80 Max + 0.05 – 0.02 0.75 Max – 6.3 Max 0.20 0 – 10 ° 0 – 10 ° 0.10 ± 0.10 + 0.25 1.27 0.10 ± 0.10 0.60 – 0.18 0.25 0.60 + 0.18 1.27 – + 0.10 0.40 – 0.05 0.40 + 0.10 – 0.05 0.1 0.1 0.12 M 0.12 M • MPAK • UPAK + 0.1 0.65 – 0.3 + 0.10 0.10 0.4 + 0.05 – 0.16 – 0.06 3 + 0.2 – 0.6 0 – 0.15 1.5 2.8 4.5 ± 0.1 1.8 Max 1.5 ± 0.1 (1.6) 0.4 0.44 Max 2 1 2.5 ± 0.1 φ1 0.1 0.65 + 0.3 4.25 Max 0.95 (2.5) 0.95 – 1.9 0.53 Max (0.2) (0.4) 0.44 Max 0.3 2.8 + 0.1 0.48 Max 0.8 Min – 1.5 1.5 0.3 3.0 + 0.2 1.1 – 0.1 8

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • DPAK-1 (L) 1.7 ± 0.5 • DPAK-1 (S) 6.5 ± 0.5 2.3 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 3.1 ± 0.5 5.5 ± 0.5 7.2 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 (4.9) 5.4 ± 0.5 0.55 ± 0.1 1.15 ± 0.1 16.2 ± 0.5 (5.3) 5.5 ± 0.5 0.8 ± 0.1 1.2 Max 9.5 0 - 0.25 2.5 ± 0.5 1.15 ± 0.1 (1.9) 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 1.5 Max • DPAK-2 (L) • DPAK–2 (S) 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 3.1 ± 0.5 5.5 ± 0.5 7.2 1.7 ± 0.5 6.5 ± 0.5 2.3 ± 0.5 (4.9) 5.4 ± 0.5 0.5 ± 0.1 1.15 ± 0.1 16.2 ± 0.5 (5.3) 5.5 ± 0.5 1.2 Max 0.8 ± 0.1 9.5 0 - 0.25 2.5 ± 0.5 1.15 ± 0.1 (1.9) 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 1.5 Max 9

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • LDPAK (L) (1.4) • LDPAK (S) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 1.5 – 2.4 11.3 ± 0.5 0.3 10.0 + 0.5 10.2 8.6 ± 0.3 (1.4) 4.44 ± 0.2 7.6 – 10.2 ± 0.3 1.3 ± 0.2 6.6 (1.5) 6.0 – 7.4 7.2 – 8.2 9.2 – 10.3 0.3 8.6 ± 0.3 10.0 + 0.5 1.27 ± 0.2 – (1.5) (1.5) 1.2 ± 0.2 2.59 ± 0.2 0.2 0.1 + 0.1 – 0.8 2.35 11.0 ± 0.5 0.2 0.86 + 0.1 – 1.27 ± 0.2 2.59 ± 0.2 0.76 ± 0.1 0.4 ± 0.1 0.3 3.0 + 0.5 1.2 ± 0.2 0.2 0.86 + 0.1 7.8 – – 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 • HDPAK (L) • HDPAK (S) 4.8 ± 0.2 4.8 ± 0.2 15.6 ± 0.3 15.6 ± 0.3 1.5 ± 0.2 (2.0) (1.5) 1.5 ± 0.2 13.6 (2.0) (1.5) 13.6 4 4 13.5 ± 0.3 15.7 ± 0.3 +0.3 –0.5 13.5 ± 0.3 11.3 ± 0.3 +0.3 15.0 –0.5 1.5 ± 0.3 15.0 2.8 ± 0.2 0.3 1 2 3 +0.3 1.6 ± 0.2 2.0 ± 0.2 2.8 ± 0.2 0.1 –0.5 1.6 ± 0.2 2.0 ± 0.2 18.0 ± 0.5 1.2 ± 0.2 1.2 ± 0.2 1.2 ± 0.2 1.2 ± 0.2 0.6 ± 0.2 4.5 ± 0.5 0.2 Min 1.0 ± 0.2 1.0 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 1 2 3 5.45 ± 0.5 5.45 ± 0.5 0.6 ± 0.2 7.4 ±0.2 7.4 ±0.2 1.0 ± 0.2 1.0 ± 0.2 1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 3.6 ± 0.2 10

PACKAGE INFORMATION Outline Dimensions (cont) Unit : mm • SP-10 • SP-12 26.5 ± 0.3 4.0 ± 0.2 31.0 ± 0.3 4.0 ± 0.2 10.0 ± 0.3 10.0 ± 0.3 2.5 2.5 10.5 ± 0.5 1.5 ± 0.2 10.5 ± 0.5 1.5 ± 0.2 1.82 2.54 1.4 1.2 0.55 0.85 ± 0.1 1.4 1.15 2.54 0.55 ± 0.1 0.55 ± 0.1 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 • SP-12TA 31.3 +0.2 –0.3 5.0 ± 0.2 24.4 ± 0.1 16.4 ± 0.3 3.8 2.0 ± 0.1 3.2 3.0 φ 3.2 16.0 ± 0.3 10.0 ± 0.3 2.7 10.5 ± 0.5 1.15 2.2 ± 0.2 2.54 1.4 0.85 ± 0.1 +0.1 1.0 0.55 –0.06 1 2 3 4 5 6 7 8 9 10 11 12 11

2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • Low on–resistance 12 3 • High speed switching 12 3 • Low drive current • 4 V gate drive device - - - can be driven from S Type L Type 5 V source D • Suitable for DC – DC convertor, motor drive, 1. Gate power switch, solenoid drive G 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ234 L , 2SJ234 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = –1.5 A resistance VGS = –10 V * —————————— —————————— — 0.5 0.7 ID = –1.5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.8 — S ID = –1.5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 245 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 170 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = –1.5 A ———————————————————————————————— Rise time tr — 25 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 85 — ns RL = 20 Ω ———————————————————————————————— Fall time tf — 72 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 80 — ns IF = –2.5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ234 L , 2SJ234 S Power vs. Temperature Derating Maximum Safe Operation Area 20 – 50 – 30 10 µs Pch (W) – 10 15 ea 10 ar ) Drain Current I D (A) 0 s on PW µs –3 t hi S( 1 in D = m Channel Dissipation n yR 10 s tio d b m 10 ra e D (T s pe it C c (1 O lim O = –1 sh pe 2 is ot ra 5°C ) tio ) n 5 – 0.3 Ta = 25°C – 0.1 – 0.05 0 50 100 150 200 – 0.1 – 0.3 –1 –3 – 10 – 30 – 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –5 – 10 – 10 V –8V Pulse Test –6V –4V V DS = –10 V –4 –8 Pulse Test Drain Current I D (A) Drain Current I D (A) – 25°C –3 – 3.5 V –6 Tc = 25°C 75°C –2 –3V –4 –1 V GS = – 2.5 V –2 0 –2 –4 –6 –8 – 10 0 –2 –4 –6 –8 – 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ234 L , 2SJ234 S Drain to Source Saturation Voltage Static Drain to Source on State Resistance vs. Gage to Source Voltage vs. Drain Current – 2.0 5 Pulse Test Drain to Source Saturation Voltage Pulse Test – 1.6 2 Static Drain–Source on State Resistance R DS (on) ( Ω ) 1 – 1.2 V DS (on) (V) –3A V GS = – 4 V 0.5 –10 V – 0.8 –2A 0.2 – 0.4 I D = –1 A 0.1 0.05 0 –2 –4 –6 –8 – 10 – 0.2 – 0.5 –1 –2 –5 –10 – 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 2.0 5 Pulse Test Forward Transfer Admittance 1.6 2 Static Drain–Source on State – 25°C Resistance R DS (on) ( Ω ) ID =–3A 1 Tc = 25°C 1.2 |y fs| (S) 75°C 0.5 V GS = – 4 V 0.8 –2A –1 A 0.2 V DS = –10 V –3A Pulse Test 0.4 –1,– 2 A 0.1 V GS = –10 V 0 0.05 – 40 0 40 80 120 160 – 0.2 – 0.5 –1 –2 –5 –10 – 20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ234 L , 2SJ234 S Typical Capacitance vs. Body – Drain Diode Reverse Recovery Time Drain to Source Voltage 1000 10000 di / dt = 50 A / µ s, Ta = 25°C V GS = 0 Reverse Recovery Time trr (ns) 300 VGS = 0 f = 1 MHz Capacitance C (pF) 100 1000 30 Ciss Coss 10 100 Crss 3 1 10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 0 –10 – 20 – 30 – 40 – 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V DD = –10 V . V GS = –10 V,VDD = – 30 V . ID = – 3 A PW = 2 µs, duty 1 % – 25 V –10 –4 300 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) td (off) Switching Time t (ns) 100 – 20 –8 tf V DS V DD = – 25 V 30 – 30 –12 tr –10 V 10 td (on) V GS – 40 –16 3 – 50 – 20 1 0 4 8 12 16 20 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Gate Charge Q g (nc) Drain Current I D (A) 5

2SJ234 L , 2SJ234 S Reverse Drain Current vs. Source to Drain Voltage –10 Pulse Test –8 Reverse Drain Current I DR (A) –6 V GS = –15 V –4 –10 V –5V –2 0, 5 V 0 0 – 0.4 – 0.8 –1.2 –1.6 – 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C e 0.02 Puls PW hot D= T 1s P DM 0.03 0.01 PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ234 L , 2SJ234 S Switching Time Test Circuit Waveforms Vin Vin Monitor 10 % Vout Monitor D.U.T 90 % RL 90 % 90 % Vin –10 V 50 Ω . V DD = –30 V . Vout 10 % 10 % td (on) tr td (off) tf 7

2SJ244 Silicon P Channel MOS FET (DIII-L) Application UPAK High speed power switching 1 2 Low voltage operation 3 Features 4 • Very low on–resistance D • High speed switching 1. Gate • Suitable for camera or VTR motor drive 2. Drain G circuit, power switch, solenoid drive and etc. 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –12 V ——————————————————————————————————————————— Gate to source voltage VGSS ±7 V ——————————————————————————————————————————— Drain current ID ±2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW < 100 µs, duty cycle < 10 % ** Value on the alumina ceramic board (12.5x20x0.7 mm) *** Marking is "JY". 1

2SJ244 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –12 — — V ID = –1 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±7 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff current IGSS — — ±5 µA VGS = ±6 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –8 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.4 — –1.4 V ID = –100 µA VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 0.65 0.9 Ω ID = –0.5 A * resistance VGS = –2.5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 0.5 -– Ω ID = –1 A * resistance VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| — 1.8 — S ID = –1 A * VDS = –5 V ——————————————————————————————————————————— Input capacitance Ciss — 130 — pF VDS = –5 V ———————————————————————————————— Output capacitance Coss — 50 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 260 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time t(on) — 365 — ns ID = –0.2 A*, Vin = –4 V ———————————————————————————————— Turn–off delay time t(off) — 1450 — ns RL = 51 Ω ——————————————————————————————————————————— Body–drain diode forward VDF — — 7 V IF = 4 A*, VGS = 0 voltage ——————————————————————————————————————————— * Pulse Test 2

2SJ244 Maximum Channel Power Dissipation Curve Safe Operation Area 2.0 -10 Operation in this Area is limited by R DS(on) PW = 1 ms 1 shot Channel Power Dissipation Pch ( W ) -3 (on the alminam ceramic board) 1.5 Drain Current I D ( A ) -1.0 D C O pe ra tio 1.0 -0.3 n* * -0.1 0.5 -0.03 Ta=25°C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 0 50 100 150 200 Drain to Source Voltage V DS (V) Ambient Temperature Ta ( °C ) **ON the almina ceramic board Typical Output Characteristics Typical Forward Transfer Characteristics -5 -5 -5 VDS = -5 V Ta = -25 °C -3.5 -4 - 4.5 Pulse Test +25 -4 -4 (A) (A) +75 -3 ID ID -3 -3 Drain Current Drain Current -2.5 -2 -2 -2 -1 -1 Pulse Test V GS = -1.5 V 0 -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ244 Forward Transfer Admittance vs. Drain to Source On State Resistance Drain Current vs. Drain Current 10 Drain to Source On State Resistance R DS(on) (Ω ) 20 VDS = -5 V Pulse Test Forward Transfer Admittance |Yfs| ( S ) Pulse Test 10 5 5 2 Ta = -25 °C -2 V 2 +25 1.0 -3 V +75 1.0 0.5 VGS = -4 V 0.5 0.2 0.2 0.1 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Drain Current ID (A) Drain Current I D (A) Drain to Source Saturation Voltage Drain to Source On State Resistance vs. Gate to Source Voltage vs. Case Temperature Drain to Source Saturation Voltage V DS(on) ( V ) Drain to Source On State Resistance R DS(on) (Ω ) 1.0 1.0 Pulse Test Pulse Test I D = -1 A 0.8 0.8 VGS = -2.5 V -0.5 A 0.6 I D = -1 A 0.6 -0.5 A 0.4 I D = -1 A -0.5 0.4 VGS = -4 V -0.2 0.2 0.2 -0.1 0 0 -1 -2 -3 -4 -5 -25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc ( °C ) 4

2SJ244 Reverse Recovery Time vs. Reverse Drain Current Switching Time vs. Drain Current 2000 2000 VGS = - 4 V, V DD = - 10 V di/dt = -10 A/µs PW = 2 µs, Duty Cycle = 1 % PW = 10 µs t rr ( ns ) 1000 1000 td(off) tf 500 500 t ( ns ) tr Reverse Recovery Time 200 200 Switching Time 100 100 td(on) 50 50 20 20 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) Drain Current I D (A) Typical Capacitance vs. Dynamic Input Characteristics Drain to Source Voltage -25 -10 1000 VGS = 0 I D = -4 A -5 V f = 1 MHz 500 (V) V GS ( V ) Pulse Test ( pF ) V DD = -10 V -20 -8 Coss V DS C 200 V GS Typical Capacitance -15 -6 Gate to Source Voltage Drain to Source Voltage Ciss 100 -10 -4 Crss 50 -5 -2 20 V DD = -10 V -5 V V DS 10 0 0 2 4 6 8 10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Gate Charge Qg ( nc ) Drain to Source Voltage V DS (V) 5

2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 Pulse Test (A) -3 Reverse Drain Current I DR -2 -4 V -2.5 V -1 VGS = 0 0 -0.5 -1.0 -1.5 -2.0 Source to Drain Voltage VSD (V) 6

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 12 • Low on–resistance 3 • High speed switching • Low drive current 2, 4 • 4 V Gate drive device can be driven 1 from 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ245 L , 2SJ245 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.2 0.25 Ω ID = –3 A resistance VGS = –10 V * ————————————————————————– — 0.28 0.38 Ω ID = –3 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 2.2 3.7 — S ID = –3 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 610 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 315 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 95 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 12 — ns ID = –3 A ———————————————————————————————— Rise time tr — 45 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 170 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 90 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.1 — V IF = –5 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– 2

2SJ245 L , 2SJ245 S Maximum Safe Operation Area Power vs. Temperature Derating –100 30 Operation in this area is limited by RDS(on) I D (A) Channel Dissipation Pch (W) 10 µs –30 10 0 –10 µs 20 1 m PW Drain Current s = D 10 –3 C m O s pe (1 ra sh tio 10 –1 ot n ) (T c = 25 –0.3 °C ) Ta = 25°C 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –5 –10 V –6 V –5 V –4 V 25°C Tc = –25°C –8 –4 I D (A) I D (A) 75°C Pulse test Pulse test –6 –3 V DS = –10 V –3.5 V Drain Current Drain Current –4 –2 –3 V –2 –1 VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ245 L , 2SJ245 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current Static Drain to Source on State Resistance –1.0 5 R DS(on) ( Ω) Drain to Source Saturation Voltage V DS(on) (V) Pulse test –0.8 2 I D = –3 A 1 –0.6 0.5 –2 A –0.4 VGS = –4 V –10 V 0.2 –1 A –0.2 0.1 Pulse test 0.05 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. Temperature vs. Drain Current 1.0 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs | (S) Pulse test R DS(on) ( Ω) 25°C 5 Tc = –25°C 0.8 2 0.6 –1, –2 A 75°C –3 A 1 VGS = –4 V 0.4 –3 A 0.5 0.2 –I D = –1, –2 A 0.2 Pulse test –10 V VDS = –10 V 0 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ245 L , 2SJ245 S Typical Capacitance vs. Body to Drain Diode Reverse Recovery Time 1000 Drain to Source Voltage 2000 t rr (ns) 500 1000 Ciss Reverse Recovery Time 200 500 C (pF) 100 200 Coss Capacitance 50 100 di/dt = 50 A/µs V GS = 0 Crss 20 50 Ta = 25°C V GS = 0 Pulse test f = 1 MHz 10 20 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V DS (V) V DD = –10 V V GS (V) –25 V t d (off) –20 –50 V –4 200 t (ns) tf Drain to Source Voltage V DD = –50 V 100 Gate to Source Voltage –40 –25 V –8 V GS = –10 V Switching Time –10 V 50 V DD = –30 V V DS –60 –12 PW = 2 µ s tr duty ≤ 1% 20 VGS t d (on) –80 –16 10 I D = –5 A –100 –20 5 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ245 L , 2SJ245 S Reverse Drain Current vs. Source to Drain Voltage –5 I DR (A) –4 Reverse Drain Current –3 –10 V –2 –5 V VGS = 0, 5 V –1 Pulse test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 6

2SJ245 L , 2SJ245 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 • Low on–resistance 3 • High speed switching • Low drive current 2, 4 • 4V gate drive device can be driven from 1 5V source. 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ246 L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.17 Ω ID = –4 A resistance VGS = –10 V ———————————————————————— — 0.21 0.31 Ω ID = –4 A VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S VDS = –10 V ID = –4 A ——————————————————————————————————————————— Input capacitance Ciss — 660 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 465 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns VGS = –10 V ———————————————————————————————— Rise time tr — 55 — ns ID = –4 V ———————————————————————————————— Turn–off delay time td(off) — 135 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — µs IF = –7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ246 L , 2SJ246 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –50 –30 10µs Pch (W) 100µs I D (A) 30 –10 PW 1 m = s DC 10 m Op s( er 1 –3 sh Power Dissipation Drain Current at ot 20 ion ) (T c= 25 –1 Operation in this area is °C ) limited by R DS(on) 10 –0.3 Ta = 25°C –0.1 0 50 100 150 200 –0.3 –1 –3 –10 –30 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –5 V –4 V Tc = –25°C –6 V –8 Pulse test –8 (A) (A) –10V Pulse test 25°C VDS = –10 V ID ID –3.5 V 75°C –6 –6 Drain Current Drain Current –4 –4 –3 V –2 –2 VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ246 L , 2SJ246 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance –2.0 5 Drain to Source Saturation Voltage R DS (on) (Ω ) Pulse test Pulse test V DS(on) (V) –1.6 2 1 –1.2 0.5 –0.8 I D = –5 A VGS = –4 V 0.2 –1 A –2 A –10 V –0.4 0.1 0.05 0 –2 –4 –6 –8 –10 –0.1 –1 –10 –100 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 10 R DS (on) (Ω ) Pulse test Pusle test V DS = –10 V Forward Transfer Admittance 0.4 5 I D = –5 A |y fs | (S) –2 A –25°C 0.3 –1 A VGS = –4 V 2 Tc = 25°C 0.2 –5 A 75°C –10 V 1 0.1 –1 A, –2 A 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ246 L , 2SJ246 S Body to Drain Diode Reverse Typical Capacitance vs. Drain to Recovery Time Source Voltage 200 10000 VGS = 0 t rr (ns) 5000 f = 1 MHz 100 (pF) Reverse Recovery Time 2000 C 50 1000 Capacitance Ciss 500 Coss 20 di/dt = 50 A/µs, Ta = 25°C 200 VGS = 0, Pulse test Crss 10 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 VGS = –10 V, PW = 2 µs, V GS (V) VDD = –10 V V DS (V) –25 V : VDD = –30 V, duty < 1 % = –20 –4 200 td(off) t (ns) VDS VDD = –25 V 100 tf Gate to Source Voltage Drain to Source Voltage –40 –10 V –8 50 Switching Time tr –60 VGS –12 20 –80 –16 td(on) I D= –7 A 10 –100 –20 5 0 –8 –16 –24 –32 –40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ246 L , 2SJ246 S Reverse Drain Current vs. Source to Drain Voltage –10 Pulse test (A) –8 I DR Reverse Drain Current –6 –10 V –4 –5 V –2 VGS = 0, 5 V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 6

2SJ246 L , 2SJ246 S Normal Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% . 90% –10 V 50Ω = –30 V . Vout 10% 10% t d (on) tr t d (off) tf 7

2SJ247 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V Gate drive device can be driven 1 23 1. Gate from 5 V source 1 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –8 A ——————————————————————————————————————————— Channel dissipation Pch** 40 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ247 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –100 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.25 0.3 Ω ID = –4A resistance VGS = –10 V * ———————————————————————— — 0.3 0.45 Ω ID = –4 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.5 — S ID = –4A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 880 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 325 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 80 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = –4A ———————————————————————————————— Rise time tr — 47 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — ns IF = –8 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ247 Power vs. Temperature Derating Maximum Safe Operation Area 60 –50 10 µs –30 Channel Dissipation Pch (W) 10 0 –10 PW µs = Drain Current I D (A) 1 10 m 40 s m D c= –3 s C (T (1 O 25 Sh pe °C ot ra ) ) tio –1 n 20 Operation in –0.3 this area is limited by R DS (on) Ta = 25°C –0.1 –0.05 0 50 100 150 –1 –3 –10 –30 –100 –300 –1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test –6 V Pulse Test –25°C –16 –4.5 V –8 Tc = 75°C VDS = –10 V Drain Current I D (A) Drain Current I D (A) 25°C –12 –4 V –6 –8 –3.5 V –4 –4 –3 V –2 –2.5 V 0 –4 –8 –12 –16 –20 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SJ247 Drain to Source Saturation Voltage Static Drain to Source on State Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Resistance vs. Drain Current –5 5 Static Drain to Source on State Pulse Test Pulse Test –4 2 Resistance RDS (on) (Ω ) ID = –10 A 1 –3 0.5 VGS = –4 V –2 –10 V –5 A 0.2 –1 –2 A 0.1 0.05 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 50 Pulse Test Forward Transfer Admittance |y fs | (s) State Resestance RDS (on) (Ω ) 0.8 –10 A 20 Pulse Test Static Drain to Source on VDS = –10 V 25°C –5 A 10 0.6 Tc = –25°C 5 0.4 –4 V –2 A 75°C 2 0.2 –2,–5 A –10 A 1 VGS = –10 V 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ247 Body-Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain-Source Voltage 500 10000 Reverse Recovery Time t rr (ns) 200 3000 VGS = 0, f = 1 MHz C (pF) 100 1000 Ciss 50 300 Capacitance Coss 20 di/dt = 50 A/ µ s 100 VGS = 0 Crss 10 30 0.5 10 –0.2 –0.5 –1 –2 –5 –10 –20 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 VDD = –10 V :. VGS = –10 V, VDD = –30 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) –25 V Pw = 2 µ s, duty ≤ 1% –20 –50 V –4 200 Switching Time t (ns) –50 V t d (off) –25 V 100 –40 –8 VDS VDD = –10 V 50 tf –60 –12 VGS 20 tr I D = –8 A –80 –16 10 t d (on) –100 –20 5 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ247 Reverse Drain Current vs. Source to Drain Voltage –20 I DR (A) Pulse Test –16 Reverse Drain Current –12 –8 –10 V –5 V –4 VGS = 0 V, 5 V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) 6

2SJ247 7

2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features 4 • Low on–resistance • High speed switching 2, 4 • Low drive current • 4 V gate drive device can be driven from 1. Gate 1 5 V source 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –1 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –1 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is "MY". 1

2SJ278 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.7 0.83 Ω ID = –0.5 A resistance VGS = –10 V * ———————————————————————— — 0.9 1.2 Ω ID = –0.5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 160 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 80 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 28 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = –0.5 A ———————————————————————————————— Rise time tr — 8 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 30 — ns RL = 60 Ω ———————————————————————————————— Fall time tf — 25 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –1 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — µs IF = –1 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— 2

2SJ278 Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –5 –3 1 Pch** (W) 10 0 µ PW 0 s I D (A) –1 µs = 1 1.5 10 m s D m C s –0.3 O (1 Channel Dissipation sh Drain Current pe 1.0 Operation in ra ot tio ) –0.1 this area is n limited by R DS(on) 0.5 –0.03 –0.01 Ta = 25 °C –0.005 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –1.0 –2.0 –10 V –6 V Pulse Test V DS = –10 V –4 V –0.8 Pulse Test (A) –1.6 I D (A) –3 V ID –1.2 –0.6 Drain Current Drain Current 75 °C Tc = –25 °C –0.8 –0.4 25 °C –2.5 V –0.4 –0.2 VGS = –2 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ278 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 I D = –1 A 2 VGS = –4 V 1 -0.6 0.5 –10 V -0.4 –0.5 A 0.2 –0.2 –0.2 A 0.1 0.05 0 –2 –4 –6 –8 –10 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 5 Static Drain to Source on State Resistance 2.0 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 1.6 –0.5 A 2 –1 A –0.2 A Tc = –25 °C 1 1.2 –1 A 25 °C VGS = –4 V 0.5 75 °C 0.8 –0.5 A –10 V –0.2 A 0.2 V DS = –10 V 0.4 0.1 Pulse Test 0 0.05 –40 0 40 80 120 160 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ278 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) di/dt = 50 A/µs Capacitance C (pF) 200 VGS = 0, duty < 1 % Ciss 100 100 Coss 50 Crss 10 20 10 VGS = 0 f = 1 MHz 5 1 –0.02 –0.05 –0.1 –0.2 –0.5 –1 –2 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –10 V V GS = –10 V, V DD = –30 V –25 V PW = 2 µs, duty < 1 % –20 –40 V –4 200 Switching Time t (ns) 100 Gate to Source Voltage Drain to Source Voltage –40 –8 tf V DS t d(off) 50 –60 V DD = –10 V –12 –25 V V GS 20 –40 V –80 –16 tr 10 t d(on) –100 –20 5 0 4 9 12 16 20 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ278 Reverse Drain Current vs. Source to Drain Voltage –1.0 Pulse Test Reverse Drain Current I DR (A) –0.8 –10 V –5 V –0.6 –0.4 V GS = 0, 5 V –0.2 0 –0.4 –0.8 –1.2 –1.6 –2.0 Drain to Source Voltage V DS (V) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 6

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source • Avalanche Ratings 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Avalanche current IAP*** –5 A ——————————————————————————————————————————— Avalanche energy EAR*** 2.1 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ279 L , 2SJ279 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.18 0.20 Ω ID = –3 A resistance VGS = –10 V * ———————————————————————— — 0.23 0.27 Ω ID = –3 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 340 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 110 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –3 A ———————————————————————————————— Rise time tr — 35 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 125 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 140 — µs IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ279 L , 2SJ279 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –30 n 10µs tio ) s n –20 R ai (o a er S by re Pch (W) p D d sa O 10 ite thi 0µ Drain Current I D (A) –10 lim in s 30 1m s PW –5 = Channel Dissipation D 10 C m 20 O s pe (1 –2 ra Sh tio ot n ) –1 (T 10 c = 25 –0.5 °C ) Ta = 25°C –0.3 0 50 –1 –2 –5 –10 –20 –50 –100 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –5 –10V –5V Pulse Test Pulse Test VDS = –10 V –8 –4V –4 I D (A) I D (A) –3.5V –6 –3 Drain Current Drain Current –4 –3V –2 Tc = 75°C 25°C –2 –1 VGS = –2.5 V –25°C 0 0 –2 –4 –6 –8 –10 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) 3

2SJ279 L , 2SJ279 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Gate to Drain Voltage Resistance vs. Drain Current –2.0 1 Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Pulse Test Resistance R DS(on) (Ω) –1.6 0.5 –1.2 I D = –5 A –0.8 VGS = –4 V 0.2 –2 A –0.4 –10 V –1 A 0.1 0 –0.1 –0.2 –0.5 –1 –2 –5 –10 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 0.5 20 Forward Transfer Admittance |yfs| (S) Pulse Test Pulse Test I D = –5 A VDS = –10 V Static Drain to Source on State 0.4 10 Resistance R DS(on) ( Ω) –1, –2 A Tc = –25°C 5 25°C 0.3 –4 V 75°C –5 A 0.2 –1, –2 A 2 VGS = –10 V 0.1 1 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ279 L , 2SJ279 S Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics –5 500 Pulse Test Reverse Drain Current I DR (A) VGS = –10 V –4 200 Switching Time t (ns) td (off) –5 V 0, 5 V 100 –3 50 tf –2 tr 20 td (on) –1 10 : VGS = –10 V , V DD= –30 V PW = 2µs , duty < 1 % = 0 5 –0.4 –0.8 –1.2 –1.6 –2 –0.1 –0.2 –0.5 –1 –2 –5 –10 Source to Drain Voltage V SD (V) Drain Current I D (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 200 3000 Capacitance C (pF) 100 1000 Ciss 50 300 Coss 100 Crss 20 30 VGS = 0 10 di/dt = 50 A/µs , VGS = 0 f = 1 MHz Ta = 25°C 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) 5

2SJ279 L , 2SJ279 S Maximum Avalanche Energy vs. Dynamic Input Characteristics 0 0 Channel Temperature Derationg V DD = –10 V 2.5 Drain to Source Voltage VDS (V) Repetive Avalanche Energy E AR (mJ) Gate to Source Voltage VGS (V) –25 V I AP = –5 A –20 –50 V –4 V DD = –25 V 2.0 duty < 0.1 % V DD = –10 V Rg > 50 Ω = –40 –8 VDS –25 V 1.5 –50 V –60 –12 1.0 I D = –5 A –80 VGS –16 0.5 –100 –20 0 8 16 24 32 40 0 25 50 75 100 125 150 Gate Charge Qg (nc) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ279 L , 2SJ279 S Normalized Transient Thermal Impendance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit and Waveform Vin 10% Vin Monitor Vout Monitor D.U.T. 90% RL 90% 90% Vin V DD 50Ω = –30 V –10 V Vout 10% 10% t d (on) tr t d (off) tf 7

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • Low on–resistance 1 2 1 3 • High speed switching 2 3 2, 4 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ280 L , 2SJ280 S Power vs. Temperature Derating Maximum Safe Operation Area 75 –500 –300 Channel Dissipation Pch (W) 10 µs Drain Current I D (A) ea –100 ar 10 ) on R his 0 S( 50 µs D by t d in 1 DC –30 m ite tion PW atio O s pe lim ra = is pe r 10 O –10 n m (T s 25 c = 25 –3 °C ) Ta = 25°C –1 –0.5 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics –50 –50 –10 V Tc = 25°C –6 V –25°C –40 –4 V –40 75°C Drain Current I D (A) –3.5 V –3 V D (A) Pulse Test –30 –30 V = –10 V Drain Current I GS –20 –2.5 V –20 –10 –10 VGS = –2 V 0 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SJ280 L , 2SJ280 S Drain-Source Saturation Voltage Static Drain-Source on State vs. Gate-Source Voltage Resistance vs. Drain Current –2.0 0.5 Drain to Source Saturation Voltage Static Drain-Source on State Pulse Test Resistance R DS(on) (Ω ) –1.6 0.2 0.1 V DS (on) (V) –1.2 I D = –30 A 0.05 VGS = –4 V –0.8 –20 A –10 V 0.02 –0.4 –10 A 0.01 0.005 0 –2 –4 –6 –8 –10 –2 –5 –10 –20 –50 –100 –200 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.1 100 Pulse Test Forward Transfer Admittance Pulse test VDS = –10 V Static Drain-Source on State 0.08 50 Resistance RDS(on) ( Ω ) I D = –30 A Tc = 25°C 20 0.06 VGS = –4 V –25°C 75°C –10 A, –20 A |y fs | (s) 10 0.04 I D = –30 A 5 0.02 –10 V –10 A, –20 A 2 0 1 –40 0 40 80 120 160 –0.5 –1 –2 –5 –10 –20 –50 Case Temperature TC (°C) Drain Current I D (A) 4

2SJ280 L , 2SJ280 S Body-Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain-Source Voltage 500 10000 Reverse Recovery Time t rr (ns) Ciss 200 C (pF) Coss 100 1000 50 Crss Capacitance 20 di/dt = 50 A/ µ s, VGS = 0 100 Ta = 25°C 10 VGS = 0, f = 1 MHz 5 10 –1 –2 –5 –10 –20 –50 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 VDD = –10 V td(off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) –25 V –20 –50 V –4 500 tf VDS Switching Time t (ns) 200 –40 –8 VDD = –10 V –25 V 100 tr –60 –50 V –12 VGS 50 td(on) I D = –30 A –80 –16 20 : VGS = –10 V, VDD = –30 V PW = 2 µs, duty < 1% = –100 –20 10 0 40 80 120 160 200 –0.5 –1 –2 –5 –10 –20 –50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ280 L , 2SJ280 S Reverse Drain Current vs. Maxmum Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –50 100 Repetive Avaranche Energy E AR (mJ) I AP = –30 A I DR (A) Pulse Test VDD = –25 V –40 80 duty < 0.1% VGS = –10 V Rg >50 Ω = Reverse Drain Current –30 60 –20 40 –5 V 0, 5V –10 20 0 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS E AR = 1 • L • I AP 2 • L 2 VDSS – VDD VDS Monitor I AP V(BR)DSS Monitor I AP Rg VDD D.U.T VDS ID Vin –15 V 50 Ω VDD 0 6

2SJ280 L , 2SJ280 S 7

2SJ291 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven form 1. Gate 5 V source 1 2. Drain 1 • Suitable for Switching regulator, DC – DC 2 3. Source 3 converter • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Avalanche current IAP*** –20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ291 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ———————————————————————— — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ291 Power vs. Temperature Derating Maximum Safe Operation Area 80 –500 –200 Pch (W) I D (A) –100 10 µs 60 –50 10 0µ PW s Channel Dissipation 1m Drain Current –20 DC =1 s 40 Op 0m –10 Operation in era s( this area is tio 1s n( ho –5 limited by R DS(on) Tc t) =2 20 5° C) –2 –1 Ta = 25 °C –0.5 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –50 –20 –10 V –6 V –4.5 V V DS = –10 V –5 V –40 –16 Pulse Test I D (A) (A) Pulse Test ID –30 –4 V –12 Drain Current Drain Current –3.5 V –20 –8 25 °C –3 V Tc = –25 °C –10 –4 75 °C VGS = –2.5 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ291 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –2.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Pulse Test 0.5 –1.6 0.2 –1.2 –20 A 0.1 VGS = –4 V –0.8 –10 A 0.05 –10 V –0.4 I D = –5 A 0.02 0.01 0 –2 –4 –6 –8 –10 –1 –2 –5 –10 –20 –50 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Static Drain to Source on State Resistance 0.2 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 Tc = –25 °C 25 °C 10 0.12 I D = –20 A 5 75 °C –5 A VGS = –4 V –10 A 0.08 –5 A 2 –10 A V DS = –10 V 0.04 –10 V –20 A 1 Pulse Test 0 0.5 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ291 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/µs Ciss Capacitance C (pF) VGS = 0, duty < 1 % 1000 Coss 200 100 Crss 50 100 VGS = 0 20 f = 1 MHz 10 1 –0.5 –1 –2 –5 –10 –20 –50 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 2 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) I D = –20 A 200 tf Gate to Source Voltage Drain to Source Voltage –40 –8 100 V DS V DD = –10 V tr –60 –25 V –12 50 –50 V t d(on) –80 V GS –16 20 –100 –20 10 0 40 80 120 160 200 –0.2 –0.5 –1 –2 –5 –10 –20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ291 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 50 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –20 A Reverse Drain Current I DR (A) –16 40 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 –10 V 30 –8 –5 V 20 V GS = 0, 5 V –4 10 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ291 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 Ta = 25 °C 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.05 θ ch – c = 2.08 °C/W 0.03 0.02 PW PCM D= 0.01 T 0.01 lse PW t pu 1sho T 0.003 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ292 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 1 23 1. Gate 5 V source 1 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ292 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ280 2

2SJ293 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 • 4 V gate drive device can be driven from 2 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate • Avalanche Ratings 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ293 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.12 Ω ID = –8 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ290 2

2SJ293 Power vs. Temperature Derating Maximum Safe Operation Area 45 –100 10µs Channel Dissipation Pch (W) 10 –30 0µ is s n) ea PW 1 m I D (A) (o ar 30 s = D S is –10 10 R th DC m by in s O d on (1 pe ite rati sh ra lim pe tio ot –3 ) Drain Current n O (T c 15 = 25 Ta = 25°C °C –1 ) –0.3 0 50 100 150 –0.1 Case Temperature Tc (°C) –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3

2SJ296 L , 2SJ296 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 2 • High speed switching 2, 4 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ296 L , 2SJ296 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ————————————————————————– — 0.09 0.15 Ω ID = –8 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test See characteristic curves of 2SJ290 2

2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 • High speed switching 2, 4 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————– Drain to source voltage VDSS –60 V ———————————————————————————————————————————– Gate to source voltage VGSS ±20 V ———————————————————————————————————————————– Drain current ID –20 A ———————————————————————————————————————————– Drain peak current ID(pulse)* –80 A ———————————————————————————————————————————– Body–drain diode reverse drain current IDR –20 A ———————————————————————————————————————————– Avalanche current IAP*** –20 A ———————————————————————————————————————————– Avalanche energy EAR*** 34 mJ ———————————————————————————————————————————– Channel dissipation Pch** 60 W ———————————————————————————————————————————– Channel temperature Tch 150 °C ———————————————————————————————————————————– Storage temperature Tstg –55 to +150 °C ———————————————————————————————————————————– * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ297 L , 2SJ297 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ————————————————————————– — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test See charactristics curves of 2SJ291 2

2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 1 32 Features 4 • Very low on–resistance 2, 4 • High speed switching • Suitable for camera or VTR motor drive circuit, 1. Gate power switch, solenoid drive and etc. 1 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –12 V ——————————————————————————————————————————— Gate to source voltage VGSS ±7 V ——————————————————————————————————————————— Drain current ID ±2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW < 100 µs, duty cycle < 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7 mm). *** Marking is "NY". 1

2SJ317 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –12 — — V ID = –1 mA, voltage VGS = 0 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±7 — — V IG = ±10 µA, voltage VDS = 0 ——————————————————————————————————————————— Gate to source cutoff current IGSS — — ±5 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –8 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.4 — –1.4 V ID = –100 µA, VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 0.4 0.7 Ω ID = –0.5 A* resistance VGS = –2.2 V ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 0.28 0.35 Ω ID = –1 A*, resistance VGS = –4 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 2.3 — S ID = –1 A*, VDS = –5 V ——————————————————————————————————————————— Input capcitance Ciss — 63 — pF VDS = –5 V, ————————————————————————————————— VGS = 0, Output capacitance Coss — 180 — pF f = 1 MHz ————————————————————————————————— Reverse transfer capacitance Crss — 23 — pF ——————————————————————————————————————————— Turn–on time ton — 500 — ns ID = –0.2 A*, ————————————————————————————————— Vin = –4 V, Turn–off delay time toff — 2860 — ns RL = 51 Ω ——————————————————————————————————————————— * Pulse test 2

2SJ317 Maximun Power Dissipation Curve Maximun Safe Operation Area 2.0 –10 Channel Power Dissipation Pch (W) Operation in this Area PW = 1 ms is limited by RDS(on) 1 shot (on the aluminam ceramic board) –3 I D (A) 1.5 D C O –1 (T pe c= ra 25 tio Drain Current °C n 1.0 –0.3 ) –0.1 0.5 –0.03 Ta = 25°C –0.01 0 50 100 150 200 –0.1 –0.3 –1.0 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Forward Transfer Characteristics –5 –5 –5 –4 –2.5 Ta = –25°C –3 –4 –4 I D (A) I D (A) Pulse test 25°C 75°C –3 –3 –2 Drain Current Drain Current –2 –2 –1.5 –1 –1 VDS = –5 V VGS = –1 V Pulse test 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ317 Forward Transfer Admittance vs. Drain to Source on State Resistance Drain Current vs. Drain Current 20 10 Forward Transfer Admittance |y fs | (S) Drain to Source On State Resistance R DS(on) ( Ω ) VDS = –5 V Pulse test 10 Pulse test 5 5 Ta = –25°C 2 VGS = –2 V 2 25°C 1 75°C –3 V 1 0.5 0.5 –4 V 0.2 0.2 0.1 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Drain Current I D (A) Drain Current I D (A) Drain to Source Saturation Voltage Drain to Source on State Resintance vs. Gate to Source Voltage vs. Case Temperature –0.5 1.0 Drain to Source on State Resistance Pulse test Pulse test Drain to Source Saturation Voltage R DS(on) ( Ω ) V DS(on) (V) –0.4 0.8 I D = –2 A I D = –1 A –1 A –0.3 0.6 –0.5 A VGS = –2.5 V –0.2 –0.5 A 0.4 –0.1 A I D = –2 A –1 A, –0.5A –0.1 –0.2 A 0.2 VGS = –4 V 0 0 –1 –2 –3 –4 –5 –25 0 25 50 75 100 Gate to Source Voltage V GS (V) Case Temperature Tc (°C) 4

2SJ317 Reverse Recovery Time vs. Switching Time vs. Drain Current Reverse Drain Current 2000 2000 tf 1000 1000 Reverse Recovery Time trr (ns) td(off) t (ns) 500 500 tr Switching Time 200 VGS = –4 V 200 V DD = –10 V 100 PW = 5 µs Duty cycle = 1 % td(on) di/dt = –10 A/µs 100 50 V GS = 0 50 20 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Drain Current I D (A) Reverse Drain Current I DR (A) Typical Capacitance vs. Dynamic Input Characteristics Drain to Source Voltage –25 –10 V DD = –10 V 1000 Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) I D = –2 A VGS = 0 –20 Pulse test –8 500 f = 1 MHz C (pF) Coss VGS –15 –6 200 Typical Capacitance 100 –10 –4 50 Ciss –5 –2 20 Crss VDS 0 10 0 2 4 6 8 10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Gate Charge Qg (nc) Drain to Source Voltage V DS (V) 5

2SJ317 Reverse Drain Current vs. Source to Drain Voltage –4 Pulse test I DR (A) –3 VGS = –4 V Reverse Drain Current –2 VGS = 0 V –1 –2.5 V 0 –0.5 –1.0 –1.5 –2.0 Source to Drain Voltage V SD (V) 6

2SJ318 L , 2SJ318 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 • Low on–resistance 3 • High speed switching 2, 4 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ318 L , 2SJ318 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.09 0.13 Ω ID = –3 A resistance VGS = –10 V * ———————————————————————— — 0.14 0.19 Ω ID = –3 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 580 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 520 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 215 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –3 A ———————————————————————————————— Rise time tr — 60 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 75 — ns RL = 3.3 Ω ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 65 — µs IF = –5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ318 L , 2SJ318 S Power vs. Temperature Derating Maximum Safe Oeparation Area 20 –30 10 µs 100 µs Pch (W) PW 1m –10 DC s = (A) Op 10 15 er m at s( ion 1s (T ho ID –3 c= t) Channel Dissipation 25 °C 10 Operation in this area ) Drain Current –1 is limited by R DS(on) 5 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.3 –1 –3 –10 –30 Case Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Charactristics –10V Typical Transfer Characteristics –10 –10 –5 V Pulse Test –4 V VDS = –10 V –8 –3.5 V –8 Drain Current I D (A) Pulse Test Drain Current I D (A) –6 –6 –4 –3 V –4 75 °C –2 –2 VGS = –2.5 V Tc = –25 °C 25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gain to Source Voltage V GS (V) 3

2SJ318 L , 2SJ318 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 0.5 Static Drain to Source State Resistance R DS(on) (Ω) Pusle Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 0.2 V GS = –4 V –0.6 0.1 V GS= –10 V I D = –5 A –0.4 0.05 –2 A –0.2 0.02 –1 A 0.01 0 –4 –8 –12 –16 –20 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 Gain to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Foeward Transfer Admittance vs. vs. Temperature Drain Current 0.4 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Pulse Test V DS = –10 V 0.32 10 Pulse Test Resistance R DS(on) (Ω) I D = –5 A 5 0.24 –2 A Tc = 75 °C 0.16 –1 A 25 °C 2 VGS = –4 V –5 A –25 °C –2 A 0.08 1 VGS = –10 V –1 A 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ318 L , 2SJ318 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage Body–Drain Diode Reverse Recovery Time t rr (ns) 200 2000 1000 100 Ciss Capacitance C (pF) 500 Coss 200 50 Crss 100 di / dt = 20 A / µs 50 20 V GS = 0 Ta = 25 °C 20 VGS = 0 f = 1MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –10 V Drain to Source Voltage V DS (V) V DD = –5 V Gate to Source Voltage VGS (V) PW = 2 µs, duty < 1 % –10 V –10 –4 200 –20 V Switching Time t (ns) I D = –5 A 100 tf –20 V GS –8 V DS 50 t d(off) V DD = –5 V –30 –12 –10 V tr –20 V 20 –40 –16 t d(on) 10 –50 –20 5 0 8 16 24 32 40 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ318 L , 2SJ318 S Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) –8 –10 V Pulse Test –6 –5 V –4 –2 VGS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Forward Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ318 L , 2SJ318 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = –10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ319 L , 2SJ319 S Silicon P Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 • No secondary breakdown 3 • Suitable for Switching regulator, DC – DC 1 1. Gate converter 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ319 L , 2SJ319 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –200 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.7 2.3 Ω ID = –2 A resistance VGS = –10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.7 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 330 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 130 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 25 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –2 A ———————————————————————————————— Rise time tr — 30 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 40 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.15 — V IF = –3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 180 — µs IF = –3 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ319 L , 2SJ319 S Power vs. Temperature Derating Maximum Safe Operation Area 20 –50 –30 Pch (W) I D (A) 15 –10 1 10 0 µs 0 PW µs –3 1 Channel Dissipation Drain Current DC = m 10 s 10 O –1 pe m ra s tio (1 n sh Operation in (T ot –0.3 c = ) 5 this area is 25 limited by R DS(on) °C ) –0.1 Ta = 25 °C –0.05 0 50 100 150 200 –1 –3 –10 –30 –100 –300 –500 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –5 –5 –10 V –8 V –6 V 25 °C Tc = –25 °C –4 Pulse Test –4 (A) I D (A) 75 °C ID –3 –3 –5 V Drain Current Drain Current –2 –2 –1 –4 V –1 V DS = –10 V VGS = –3.5 V Pulse Test 0 –4 –8 –12 –16 –20 0 –2 –4 –6 –8 –10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ319 L , 2SJ319 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –20 10 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 5 VGS = –10 V –16 Pulse Test 2 –12 I D = –5 A 1 –8 0.5 –2 A –4 0.2 –1 A 0.1 0 –4 –8 12 –16 –20 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 5 3 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) 2 Tc = –25 °C 4 1 –2 A 3 I D = –5 A 25 °C 0.5 –1 A 75 °C 2 1 VGS = –10 V 0.2 V DS = –10 V Pulse Test Pulse Test 0 0.1 –40 0 40 80 120 160 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ319 L , 2SJ319 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) 500 Ciss Capacitance C (pF) 200 200 100 100 Coss 50 50 VGS = 0 20 20 f = 1 MHz di/dt = 50 A/µs, VGS = 0 10 duty < 1 %, Ta = 25 °C 10 Crss 5 5 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –50 V V GS = –10 V, V DD = –30 V –100 V duty < 1 %, PW = 2 µs –100 –150 V –4 200 Switching Time t (ns) V DS Gate to Source Voltage Drain to Source Voltage V DD = –50 V 100 –200 –8 –100 V t d(off) –150 V 50 –300 –12 tf 20 tr V GS t d(on) –400 –16 ID = –3A 10 –500 –20 5 0 4 8 12 16 20 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ319 L , 2SJ319 S Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –2 –10 V –1 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ319 L , 2SJ319 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ321 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ321 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.095 Ω ID = –8 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.12 Ω ID = –8 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 12 — S ID = –8 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 670 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 240 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –8 A ———————————————————————————————— Rise time tr — 95 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ290 2

2SJ321 Maximum Safe Operation Area Power vs. Temperature Derating –100 10µs 45 10 –30 Channel Dissipation Pch (W) 0µ is s n) ea PW 1 m I D (A) (o ar s = D S is –10 10 R th 30 DC m by in s O d on (1 pe ite rati sh ra lim pe tio ot –3 ) Drain Current n O (T c = 25 15 Ta = 25°C °C –1 ) –0.3 0 50 100 150 –0.1 Case Temperature Tc (°C) –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) 3

2SJ322 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 1 • Low drive current 2 3 • 4 V gate drive device can be driven from 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Avalanche current IAP*** –20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ322 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = –10 A resistance VGS = –10 V * ———————————————————————— — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ291. 2

2SJ322 Power vs. Temperature Derating Maximum Safe Operation Area 40 –200 –100 Pch (W) 10 I D (A) –50 µs 30 10 0µ –20 PW 1m s =1 s –10 Channel Dissipation Drain Current 0m DC s( 20 –5 Op 1s era ho Operation in tio t) n( –2 this area is Tc limited by R DS(on) =2 10 –1 5° C) –0.5 –0.2 Ta = 25 °C 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 3.57 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 0.0 1 lse PW pu h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SJ323 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 1 2 23 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ323 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A resistance VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 500 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curve of 2SJ280. 2

2SJ323 Power vs. Temperature Derating Maximum Safe Operation Area 60 –500 –300 Channel Dissipation Pch (W) –100 Drain Current I D ( A ) 10 (o rea µs n) 10 a 40 y R this 0 µs PW DS –30 1 d b in D m ite on s = C lim ati 10 O is per –10 pe m O ra s (1 20 tio –3 n sh (T o t) c = Ta = 25 °C 25 –1 °C ) –0.5 0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage VDS ( V ) Case Temperature Tc (°C) 3

2SJ332 L , 2SJ332 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V Gate drive device can be driven from 5 V Source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ332 L , 2SJ332 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.08 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.09 0.14 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 6 9 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 730 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 260 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = –5 A ———————————————————————————————— Rise time tr — 110 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 90 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 110 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 50 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ332 L , 2SJ332 S Power vs. Temperature Derating Maximum Safe Operation Area 20 –100 10 µs 100 µs Pch (W) –30 I D (A) 15 1 m –10 s d is D on ite Th Channel Dissipation Drain Current (T .C D Lim in 10 –3 c Op R is ion = 25 era by rea rat ) A pe °C tio S( O –1 ) n 5 –0.3 PW = 10 ms (1shot) Ta = 25 °C –0.1 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Tranfer Characteristics –20 –20 –10 V Pulse Test –6 V V DS = –10 V –16 –3.5 V –16 (A) I D (A) –4 V Pulse Test ID –12 –12 Drain Current Drain Current –3 V –8 –8 75 °C VGS = –2.5 V Tc = 25 °C –4 –4 –25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ332 L , 2SJ332 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 –0.8 I D = –10 A 0.2 –0.6 Drain to Source Voltage VGS = –4 V 0.1 –0.4 –10 V –5 A 0.05 –0.2 –2 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.20 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 I D = –10 A 20 –5 A –25 °C 10 Tc = 25 °C 0.12 V GS = –4 V –2 A 5 75 °C 0.08 –10 A 2 0.04 –5 A V GS = –10 V –2 A 1 V DS = –10 V Pulse Test 0 0.5 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ332 L , 2SJ332 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 1000 Ciss Coss 50 Crss di / dt = 20 A / µs 100 20 VGS = 0, Pulse Test 10 VGS = 0 f = 1 MHz 5 10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DD = –5 V V GS = –10 V, V DD = –10 V V DS (V) –10 V tf PW = 2 µs, duty < 1 % –10 –20 V –4 200 Switching Time t (ns) V DS 100 Gate to Source Voltage Drain to Source Voltage –20 V DD = –5 V –8 t d(off) –10 V tr –20 V 50 –30 –12 V GS 20 t d(on) –40 –16 10 I D = –10 A –50 –20 5 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ332 L , 2SJ332 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –10 V –8 –5 V –4 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –20 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e PW 0.0 1 Puls PDM D= ot T 0.03 h 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ332 L , 2SJ332 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ333 L , 2SJ333 S Silicon P-Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V Gate drive device can be driven from 5 V 1 Source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ333 L , 2SJ333 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.14 Ω ID = –4 A resistance VGS = –10 V * ———————————————————————— — 0.15 0.22 Ω ID = –4 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 6 — S ID = –4 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 755 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 495 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 210 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = –4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 120 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — µs IF = –7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ333 L , 2SJ333 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 100 µs Pch (W) 10 µs –30 I D (A) 30 1 P ms DC –10 Op 10 W = era ms Channel Dissipation Drain Current tio (1s n( ho 20 –3 Tc t) Operation in this =2 area is limited 5° C) –1 by R DS(on) 10 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.5 –1 –2 5 –10 –20 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –10 V Pulse Test –5 V Tc = 25 °C –4.5 V –3.5 V –8 –8 I D (A) –4 V (A) –25 °C 75 °C ID –6 –6 Drain Current –3 V Drain Current –4 V DS = –10 V –4 Pulse Test –2 –2.5 V –2 VGS = –2 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ333 L , 2SJ333 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Pulse Test –0.8 2 1 –0.6 I D = –5 A 0.5 –0.4 0.2 VGS = –4 V –2 A –0.2 –10 V 0.1 –1 A 0.05 0 –4 –8 12 –16 –20 –0.1 –0.3 –1 –3 –10 –30 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.40 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = –10 V 0.32 20 Pulse Test –2 A 10 –25 °C I D = –5 A 0.24 5 Tc = 25 °C V GS = –4 V –1 A 0.16 75 °C 2 I D = –1 A 0.08 –2 A V GS = –10 V 1 –5 A 0 0.5 –40 0 40 80 120 160 –10 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ333 L , 2SJ333 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz Capacitance C (pF) 200 3000 100 50 1000 Ciss Coss 20 300 10 di / dt = 50 A / µs Crss VGS = 0, Ta = 25 °C 5 100 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –25 V –10 V PW = 5 µs, duty < 1 % –20 –4 200 t d(off) Switching Time t (ns) V DS V DD = –25 V 100 tf Gate to Source Voltage Drain to Source Voltage –10 V –40 –8 50 tr –60 V GS –12 I D = –7 A 20 t d(on) –80 –16 10 –100 –20 5 0 –8 –16 –24 –32 –40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ333 L , 2SJ333 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –10 V –5 V –8 –4 V GS = 0, 5 V 0 –0.4 –0.8 –1.2 –1.6 –2 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ333 L , 2SJ333 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ350 Silicon P-Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –120 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –6 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –6 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ350 Power vs. Temperature Derating Maximum Safe Operation Area 40 –20 10 µs 10 –10 Pch (W) 0 1 µs I D (A) PW m 30 –5 = s DC 10 O m pe s (1 Channel Dissipation sh Drain Current –2 ra Operation in tio ot 20 n ) –1 this area is (T limited by R DS(on) c = 25 –0.5 °C 10 ) –0.2 Ta = 25 °C –0.1 0 50 100 150 200 –2 –5 –10 –20 –50 –100 –200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 –10 –10 V –4 V –6 V –3.5 V Tc = –25 °C –8 –8 I D (A) (A) 25 °C 75 °C ID –6 –6 Drain Current Drain Current –3 V –4 –4 VGS = –2.5 V –2 –2 V DS = –10 V Pulse Test Pulse Test 0 –4 –8 –12 –16 –20 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ350 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 5000 Reverse Recovery Time trr (ns) 500 2000 Capacitance C (pF) Ciss 1000 200 500 100 Coss 200 100 50 50 Crss 20 di / dt = 50 A / µs, V GS = 0 VGS = 0 20 Ta = 25 °C, Pulse Test f = 1 MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –25 V –50 V PW = 2 µs, duty < 1 % –40 –80 V –4 200 Switching Time t (ns) I D = –6 A t d(off) 100 Gate to Source Voltage Drain to Source Voltage –80 –8 V DS tf V DD = –25 V 50 –50 V –120 –80 V –12 tr 20 t d(on) –160 V GS –16 10 –200 –20 5 0 20 40 60 80 100 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ350 Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ351, 2SJ352 Silicon P-Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SK2220 2SK2221 Features • High power gain • Excellent frequency response 3 • High speed switching • Wide area of safe operation • Enhancement–mode 1 1. Gate • Good complementary characteristics 1 2. Source • Equipped with gate protection diodes 2 3. Drain 3 Table 1 Ordering Information 2 Type No. VDSS ———————————————————— 2SJ351 –180 V ———————————————————— 2SJ352 –200 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SJ351 VDSX –180 V ———— ——— 2SJ352 –200 ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –8 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –8 A ——————————————————————————————————————————— Channel dissipation Pch* 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * Value at Tc = 25 °C 1

2SJ351, 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SJ351 V(BR)DSX –180 — — V ID = –10 mA, VGS = 10 V breakdown voltage ———— —————————— 2SJ352 –200 — — ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V ID = –100 mA VDS = –10 V ——————————————————————————————————————————— Drain to source saturation VDS(sat) — — –12 V ID = –8 A, VGD = 0 V* voltage ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 800 — pF VGS = 5 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VDS = –10 V ———————————————————————————————— Reverse transfer capacitance Crss — 18 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 320 — ns VDD = –30 V ———————————————————————————————— Turn–off time toff — 120 — ns ID = –4 A ——————————————————————————————————————————— * Pulse Test 2

2SJ351, 2SJ352 Power vs. Temperature Derating Maximum Safe Operation Area 160 –20 Ta = 25°C IDmax (Continuous) Pch (W) –10 PW = 120 PW Drain Current ID (A) = 00 –5 10 m 1 m s1 s D PW era 1 Sh C Channel Dissipation Sh ot O = on p ot 1 s TC 80 –2 ti 1 Sh 25 ( ot = –1.0 °C ) 40 –0.5 2SJ351 2SJ352 –0.2 0 50 100 150 200 –5 –10 –20 –50 –100 –200 –500 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Output Characteristics –10 –10 –9 0V TC = 25°C TC = 25°C VGS = –10 V –9 = –1 –8 –8 –8 –8 S Drain Current ID (A) Drain Current ID (A) VG –7 –7 –6 –6 –6 Pc –6 h= –5 12 5W –5 –4 –4 –4 –4 –3 –3 –2 –2 –2 –2 –1 –1 0 0 –10 –20 –30 –40 –50 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) 3

2SJ351, 2SJ352 Typical Transfer Characteristics Typical Transfer Characteristics –10 –1.0 VDS = –10 V VDS = –10 V –8 –0.8 °C °C 25 25 Drain Current ID (A) Drain Current ID (A) 25 =– =– 25 75 C C –6 –0.6 T T 75 –4 –0.4 –2 –0.2 0 –2 –4 –6 –8 –10 0 –0.4 –0.8 –1.2 –1.6 –2.0 Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Forward Transfer Admittance vs. Frequency Switching Time vs. Drain Current 5 500 Forward Transfer Admittance yfs (S) ton Switching Time ton, toff (ns) 1.0 200 100 toff 100 m 50 TC = 25°C 10 m VDS = –10 V 20 ID = –2 A 10 1m 0.5 m 5 2k 10 k 100 k 1M 10 M 20 M –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Frequency f (Hz) Drain Current ID (A) 4

2SJ351, 2SJ352 Switching Time Test Circuit Waveforms Output 10% 2Ω Input Input 90% ton toff –30 V 90% PW = 50 µs duty ratio 50 Ω = 1% Output 10% 5

2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 2 Features 3 • Low on–resistance 4 • High speed switching 2, 4 • Low drive current 1. Gate • 2.5 V gate drive device can be driven from 2. Drain 3 V source 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is “RY”. 1

2SJ361 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.28 0.4 Ω ID = –1 A resistance VGS = –10 V ———————————————————————— — 0.85 1.5 Ω ID = –0.4 A VGS = –2.5 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.15 0.3 — S ID = –10 A VDS = –10 V ——————————————————————————————————————————— Input capacitance Ciss — 3.2 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 130 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.6 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 350 — ns ID = –1 A ———————————————————————————————— Rise time tr — 1650 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 7280 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 6950 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –2 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 530 — µs IF = –2 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ361 Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –10 Pch** (W) 10 10 µs –3 I D (A) 0 PW 1 µs 1.5 m = s –1 10 m D s Channel Dissipation Drain Current (T C O (1 1.0 –0.3 c sh = pe ot 25 rat ) Operation in °C ion –0.1 this area is ) limited by R DS(on) 0.5 –0.03 Ta = 25 °C –0.01 0 50 100 150 200 –0.05 –0.1 –0.3 –1 –3 –10 –30 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Transfer Characteristics Typical Output Characteristics –2.0 –5 –10 V –5 V –3.5 V V DS = –10 V –1.6 (A) –4 I D (A) –4 V Pulse Test Pulse Test ID –3 –3 V –1.2 Drain Current Drain Current –2 –0.8 75 °C –2.5 V Tc = –25 °C 25 °C –1 –0.4 –2 V VGS = –1.5 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ361 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 3 Pulse Test –0.4 I D = –1 A –0.3 1 –2.5 V –4 V –0.2 –0.5 A VGS = –10 V 0.3 –0.1 –0.2 A 0.1 0 –2 –4 –6 –8 –10 –0.1 –0.3 –1 –3 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 1 Static Drain to Source on State Resistance 2.0 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 1.6 Tc = –25 °C 0.3 –1 A 25 °C VGS = –2.5 V –0.5 A 1.2 –0.2 A 75 °C 0.1 0.8 –0.5 A –1 A –0.2 A –4 V –1 A 0.3 V DS = –10 V 0.4 –0.5 A Pulse Test I D = –0.2 A 0 –10 V 0.01 –40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ361 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 3000 500 300 Coss Reverse Recovery Time trr (ns) 100 Capacitance C (pF) di/dt = 20 A/µs VGS = 0, Ta = 25 °C VGS = 0 1000 30 f = 1 MHz 10 Ciss 3 300 1 Crss 0.3 100 0.1 –0.1 –0.3 –1 –3 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 20 t d(off) V GS (V) V DS (V) 10 V DS tf Switching Time t (µs) –20 –4 V DD = –10 V –20 V 3 Gate to Source Voltage Drain to Source Voltage –40 –8 tr I D = –2 A VGS = –10 V 1 VDD = –10 V –60 –12 PW = 30 µs V DD = –10 V t d(on) duty < 1 % V GS –20 V 0.3 –80 –16 –100 –20 0.1 0 0.4 0.8 1.2 1.6 2.0 –0.1 –0.3 –1 –3 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ361 Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –10 V –5 V –2 –2.5 V –1 V GS = 0, 5 V 0 –0.2 –0.4 –0.6 –0.8 –1.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% 10 V = 10 V Vout 10% 10% td(on) tr td(off) tf 6

2SJ363 Silicon P Channel MOS FET Application UPAK Low frequency power switching 1 32 Features 4 • Low on–resistance • Low drive current D • 4 V gate drive device can be driven from 5 V source 1. Gate G 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is “PY”. 1

2SJ363 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –24 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID=–100 µA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.6 0.75 Ω ID = –1 A resistance VGS = –4 V * ———————————————————————— — 0.35 0.45 Ω ID = –1 A VGS = –10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.4 2.0 — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2.1 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 100 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.25 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 1.65 — µs ID = –1 A ———————————————————————————————— Rise time tr — 8 — µs VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 25.9 — µs RL = 30 Ω ———————————————————————————————— Fall time tf — 14.9 — µs ——————————————————————————————————————————— 2

2SJ363 Maximum Channel Power Dissipation Curve Maximum Safe Operation Area –10 2.0 Pch (W) 100 µs –3 I D (A) 1 PW 10 m s 1.5 = s –1 m DC Channel Power Dissipation O Drain Current pe –0.3 ra 1.0 tio n –0.1 Operation in this area is 0.5 limited by R DS(on) –0.03 Ta = 25 °C –0.01 0 –0.1 –0.3 –1 –3 –10 –30 –100 50 100 150 200 Drain to Source Voltage V DS (V) Ambient Temperature Ta (°C) Typical Output Characteristics –4.5 V –4 V Typical Transfer Characteristics –5 –2.0 V .5 –3 V Pulse Test –4 (A) –1.6 –3 I D (A) Ta = –25 °C 25 °C ID –3 –1.2 75 °C Drain Current Drain Current V –2.5 –0.8 –2 V DS = –10 V –0.4 –1 –2 V V GS = –1.5 V 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SJ363 Static Drain to Source on State Resistance Drain to Source Saturation Voltage vs. vs. Drain Current Gate to Source Voltage 10 –1.0 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage Pulse Test V DS(on) (V) 3 –0.8 1 –2 A VGS = –4 V –0.6 0.3 –10 V –0.4 0.1 -1 A –0.2 I D = –0.5 A 0.03 0.01 0 –0.01 –0.03 –0.1 –0.3 –1 –3 –10 –4 –8 –12 –16 –20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 2.0 10 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 5 1.6 Tc = –25 °C 2 1.2 –1 A –0.5 A 1 75 °C I D = –2 A 25 °C 0.8 VGS = –4 V 0.5 0.4 V DS = –10 V I D = –2 A 0.2 –1 A Pulse Test VGS = –10 V 0 –0.5 A 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ363 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 500 100 200 VGS = 0 50 100 Coss t d(off) Switching Time t (µs) f = 1 MHz Capacitance C (pF) 50 20 tf 20 10 10 5 tr Ciss 5 2 V GS = –10 V 1 PW = 50 µs, duty < 1 % 0.5 Crss 2 t d(on) 0.2 0.1 1 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –10 –20 –30 –40 –50 Drain Current I D (A) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test Reverse Drain Current I DR (A) –4 –3 –10 V –2 –5 V –1 V GS = 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5

2SJ384 L , 2SJ384 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance 1 2 • High speed switching 2, 4 3 • Low drive current • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –15 A ——————————————————————————————————————————— Avalanche current IAP*** –15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ384 L , 2SJ384 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.07 0.01 Ω ID = –8 A resistance VGS = –10 V * ————————————————————————– — 0.12 0.19 Ω ID = –3 A VGS = –2.5 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 8 14 — S ID = –8 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 2170 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 830 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 130 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 16 — ns ID = –8 A ———————————————————————————————— Rise time tr — 75 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 360 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 180 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.0 — V IF = –15 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 130 — ns IF = –15 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test 2

2SJ384 L , 2SJ384 S Power vs. Temperature Derating Maximum Safe Operation Area 80 –200 –100 10 µs Pch (W) I D (A) –50 60 10 –20 0µ s PW 1m Channel Dissipation –10 Drain Current DC =1 Op 0m s 40 –5 era s( Operation in tio 1s n( ho –2 this area is Tc t) =2 limited by R DS(on) 5° 20 –1 C) –0.5 Ta = 25 °C –0.2 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –20 –10 V Pulse Test V DS = –10 V –4 V Pulse Test –16 –3 V –16 I D (A) (A) –2.5 V ID –12 –12 Drain Current Drain Current –8 –8 –2 V Tc = –25 °C –4 –4 25 °C VGS = –1.5 V 75 °C 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ384 L , 2SJ384 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test V DS(on) (V) g 0.5 –0.8 I D = –10 A 0.2 VGS = –2.5 V –0.6 –4 V 0.1 –0.4 –5 A 0.05 –10 V –0.2 –2 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test Tc = –25 °C 0.4 20 25 °C 10 0.3 I D = –10 A –2 A –5 A 5 75 °C VGS = –2.5 V 0.2 2 0.1 1 –2, –5, –10 A V DS = –10 V –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ384 L , 2SJ384 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 Ciss Capacitance C (pF) 200 1000 100 Coss 50 300 100 Crss 20 10 30 VGS = 0 di / dt = 50 A / µs VGS = 0, Ta = 25 °C f = 1 MHz 5 10 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) V DS 200 Gate to Source Voltage Drain to Source Voltage tf –40 –8 V GS 100 –60 V DD = –50 V –12 –25 V 50 tr –10 V –80 –16 20 t d(on) I D = –15 A 10 –100 –20 0 20 40 60 80 100 –0.05 –0.1 –0.3 –1 –3 –10 –30 –50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ384 L , 2SJ384 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 20 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –15 A Reverse Drain Current I DR (A) –16 16 V DD = –25 V duty < 0.1 % Rg > 50 Ω –10 V –12 12 V GS = 0, 5 V –5 V –8 8 –4 4 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ384 L , 2SJ384 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 2.5 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features 32 • Low on–resistance 1 • High speed switching D • Low drive current • 4 V gate drive device can be driven from 1. Gate G 5 V source 2. Drain • Suitable for Switching regulator, DC – DC 3. Source converter S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –5 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3 A ——————————————————————————————————————————— Channel dissipation Pch 0.9 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % 1

2SJ386 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –24 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.55 0.8 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.7 — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 177 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 120 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 59 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = –2 A ———————————————————————————————— Rise time tr — 28 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 45 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— 2

2SJ386 Maximum Channel Dissipation Curve Maximum Safe Operation Area 1.6 –10 Pch (W) 100 µs –3 PW I D (A) 1 m 1.2 s = 10 Channel Power Dissipation –1 m s Drain Current 0.8 –0.3 D C O pe Operation in ra –0.1 tio this area is n 0.4 limited by R DS(on) –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –2.0 –5 –5 V –4 V V DS = –10 V –3.5 V –3 V Pulse Test –1.6 –4 I D (A) (A) Ta = 25 °C Pulse Test Ta = –25 °C ID –1.2 –3 25 °C Drain Current Drain Current –2.5 V 75 °C –0.8 –2 –0.4 –1 VGS = –2 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ386 Static Drain to Source on State Resistance Drain to Source Saturation Voltage vs. vs. Drain Current Gate to Source Voltage 10 –5 Drain to Source On State Resistance R DS(on) ( Ω ) Ta = 25 °C Drain to Source Saturation Voltage V DS(on) (V) Ta = 25 °C 5 Pulse Test Pulse Test –4 2 –3 1 VGS = –4 V –2 0.5 I D = –5 A –10 V –1 –3 A 0.2 –1 A 0.1 0 –4 –8 –12 –16 –20 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 1.0 10 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) I D = –3 A 5 0.8 Ta = –25 °C V GS = –4 V –1 A 2 0.6 25 °C I D = –5 A 1 75 °C 0.4 0.5 –3 A –1 A VGS = –10 V 0.2 0.2 V DS = –10 V Pulse Test 0 0.1 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Ambient Temperature Ta (°C) Drain Current I D (A) 4

2SJ386 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 1000 0 0 V GS (V) V DS (V) V DD = –30 V 500 –20 V I D = –3 A –10 –10 V –4 Capacitance C (pF) 200 Gate to Source Voltage Drain to Source Voltage Ciss –20 –8 100 Coss V DD = –30 V –30 –20 V –12 50 Crss V DS –10 V –40 V GS –16 20 VGS = 0 f = 1 MHz 10 –50 –20 0 –10 –20 –30 –40 –50 0 4 8 12 16 20 Gate Charge Qg (nc) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Switching Characteristics Source to Drain Voltage 200 –5 100 Pulse Test Reverse Drain Current I DR (A) tf Switching Time t (ns) –4 50 t d(off) –3 20 –10 V tr t d(on) –5 V 10 –2 V GS = 0 5 V GS = –10 V, V DD = –30 V –1 PW = 2 µs, duty < 1 % 2 –0.05 –0.1 –0.2 –0.5 –1 –2 –5 0 –0.4 –0.8 –1.2 –1.6 –2.0 Drain Current I D (A) Source to Drain Voltage V SD (V) 5

2SJ387 L , 2SJ387 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • Low drive current 2, 4 • 2.5 V Gate drive device can be driven from 3 V 12 3 Source • Suitable for Switching regulator, DC – DC 1 1. Gate converter 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ387 L , 2SJ387 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.07 Ω ID = –5 A resistance VGS = –4 V * ———————————————————————— — 0.07 0.1 Ω ID = –5 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1170 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 860 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 310 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = –5 A ———————————————————————————————— Rise time tr — 325 — ns VGS = –4 V ———————————————————————————————— Turn–off delay time td(off) — 350 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 425 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 240 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ387 L , 2SJ387 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 10 µs Pch (W) –30 I D (A) 100 µs 30 PW 1m –10 =1 s DC Op 0m Channel Dissipation Drain Current era s( tio 1s 20 –3 n( ho Operation in Tc t) this area is =2 5° –1 limited by R DS(on) C) 10 –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –0.5 –1 –2 –5 –10 –20 –50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V Pulse Test –16 –2.5 V –8 I D (A) (A) –5 V –4 V ID –12 –6 Drain Current Drain Current –2 V –8 –4 Tc = –25 °C –4 –2 VGS = –1.5 V 25 °C 75 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ387 L , 2SJ387 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 0.1 VGS = –2.5 V I D = –5 A –0.2 0.05 –4 V –0.1 –2 A 0.02 –1 A 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.2 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 Tc = –25 °C 10 25 °C 0.12 I D = –5 A 5 VGS = –2.5 V 75 °C 0.08 –1, –2 A 2 –5 A 0.04 –1 A –2 A 1 –4 V V DS = –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ387 L , 2SJ387 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 5000 Capacitance C (pF) 200 2000 Ciss 100 1000 Coss 50 500 20 200 Crss di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 100 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 t d(off) V GS (V) V DS (V) V DD = –5 V 500 –10 –10 V –4 tf Switching Time t (ns) –15 V V DS V DD = –15 V 200 Gate to Source Voltage Drain to Source Voltage –20 10 V –8 tr 5V 100 –30 V GS –12 50 V GS = –4 V, V DD = –10 V PW = 5 µs, duty < 1 % –40 –16 20 t d(on) I = –10 A –50 D –20 10 0 20 40 60 80 100 –0.1 –0.3 –1 –3 –10 –30 –100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ387 L , 2SJ387 S Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –5 V –3 V –12 V GS = 0, 5 V –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SJ387 L , 2SJ387 S Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 50Ω 90% –4 V = 10 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ388 L , 2SJ388 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 2.5 V Gate drive device can be driven from 3 V Source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SJ388 L , 2SJ388 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.06 0.08 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.12 0.2 Ω ID = –5 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 8 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 970 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 620 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 250 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = –5 A ———————————————————————————————— Rise time tr — 65 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 250 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 240 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 85 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ388 L , 2SJ388 S Power vs. Temperature Derating 30 Pch (W) 20 Channel Dissipation 10 0 50 100 150 Case Temperature Tc (°C) 3

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source • Avalanche Ratings 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Avalanche current IAP*** –10 A ——————————————————————————————————————————— Avalanche energy EAR*** 8.5 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ389 L , 2SJ389 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.135 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.14 0.2 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 8 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 910 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 170 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –5 A ———————————————————————————————— Rise time tr — 85 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 220 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — µs IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ389 L , 2SJ389 S Power vs. Temperature Derating Maximum Safe Operation Area 40 –200 –100 Pch (W) I D (A) –50 10 30 µs 10 –20 0µ PW s 1m Channel Dissipation Drain Current –10 DC =1 s 20 Op 0m –5 era s( Operation in tio 1s n( ho Tc –2 this area is = 2 t) 10 limited by R DS(on) 5° –1 C) –0.5 Ta = 25 °C –0.2 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V –5 V –4 V Pulse Test –16 –8 I D (A) (A) –4.5 V ID –12 –3.5 V –6 Drain Current Drain Current –8 –4 –3 V 75 °C Tc = –25 °C –4 –2 VGS = –2.5 V 25 °C 0 –4 –8 –12 –16 –20 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ389 L , 2SJ389 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test -0.8 2 1 –0.6 I D = –5 A 0.5 -0.4 0.2 VGS = –4 V –2 A –0.2 –1 A 0.1 –10 V 0.05 0 –4 –8 12 –16 –20 –1 –2 –5 –10 –20 –50 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = –10 V Pulse Test 0.4 20 10 0.3 –2, –1 A Tc = –25 °C I D = –5 A 5 25 °C 0.2 V GS = –4 V 2 75 °C 0.1 –5, –2, –1 A –10 V 1 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ389 L , 2SJ389 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 Crss 50 100 20 300 di / dt = 50 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 100 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) I D = –10 A 200 Gate to Source Voltage Drain to Source Voltage –40 V DS –8 tf 100 V DD = –50 V –60 –12 50 –25 V –10 V tr –80 V GS –16 20 t d(on) –100 –20 10 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ389 L , 2SJ389 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 10 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –10 A Reverse Drain Current I DR (A) –16 8 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 6 V GS = –10 V –8 4 –5 V 0, 5 V -4 2 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ389 L , 2SJ389 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ390 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 • 4 V gate drive device can be driven from 2 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate • Avalanche Ratings 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Avalanche current IAP*** –10 A ——————————————————————————————————————————— Avalanche energy EAR*** 8.5 mJ ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ390 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.09 0.12 Ω ID = –5 A resistance VGS = –10 V * ———————————————————————— — 0.13 0.19 Ω ID = –5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5 9 — S ID = –5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1060 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 520 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 190 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = –5 A ———————————————————————————————— Rise time tr — 65 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 175 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 110 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ390 Power vs. Temperature Derating Maximum Safe Operation Area 40 –100 10 µs Pch (W) –30 I D (A) 10 30 0µ PW s –10 1m =1 s 0m Channel Dissipation Drain Current DC Op s( 20 –3 1s era ho Operation in n( tio t) –1 this area is Tc =2 limited by R DS(on) 5° 10 C) –0.3 Ta = 25 °C –0.1 0 50 100 150 200 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V –6 V Pulse Test –4 V V DS = –10 V –16 –8 Pulse Test I D (A) (A) ID –3.5 V –12 –6 Drain Current Drain Current –8 –4 –3 V 75 °C Tc = –25 °C –4 –2 VGS = –2.5 V 25 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ390 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.8 2 1 –0.6 I D = –5 A 0.5 –0.4 0.2 VGS = –4 V –2 A -0.2 0.1 –1 A –10 V 0.05 0 –4 –8 –12 –16 –20 –0.1 -0.3 –1 –3 –10 –30 –100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test V DS = 10 V Pulse Test 0.4 20 10 Tc = –25 °C 0.3 –1, –2 A 25 °C 5 I D = –5 A 0.2 75 °C VGS = –4 V 2 –5 A 0.1 1 –1, –2 A –10 V 0 0.5 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ390 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz 500 3000 Capacitance C (pF) Ciss 1000 200 Coss 100 300 Crss 50 100 30 20 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 10 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 VGS = –10 V, V DD = –30 V V GS (V) V DS (V) V DD = –10 V –25 V 500 PW = 5 µs, duty < 1 % –20 –50 V –4 Switching Time t (ns) t d(off) 200 I D = –10 A Gate to Source Voltage Drain to Source Voltage –40 –8 tf 100 V DS –60 V DD = –10 V –12 –25 V 50 tr –50 V V GS –80 –16 20 t d(on) –100 –20 10 0 20 40 60 80 100 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ390 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –20 10 Repetive Avalanche Energy E AR (mJ) Pulse Test Reverse Drain Current I DR (A) I AP = –10 A –16 8 V DD = –25 V duty < 0.1 % Rg > 50 Ω –12 6 –5 V –8 4 –10 V V GS = 0, 5 V –4 2 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ390 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 e PW 0.0 1 puls h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor Vout Vin Monitor D.U.T. 10% RL 90% Vin V DD 90% 90% –10 V 50Ω = 30 V Vout 10% 10% td(on) tr td(off) tf 7

2SJ399 Silicon P Channel MOS FET Application MPAK Low frequency power switching 3 1 Features 2 • Low on–resistance • Small package D • Low drive current • 4 V gate drive device can be driven from 1. Source G 5 V source 2. Gate • Suitable for low signal load switch. 3. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –0.2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –0.4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –0.2 A ——————————————————————————————————————————— Channel dissipation Pch** 150 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** Marking is “ZF–” 1

2SJ399 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –100 µA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±2 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –10 µA, VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 2.7 7.5 Ω ID = –20 mA resistance VGS = –4 V * ———————————————————————— — 2.0 7 Ω ID = –10 mA VGS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1.1 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 22.3 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.17 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 530 — ns ID = –0.1 A ———————————————————————————————— Rise time tr — 2170 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 7640 — ns RL = 100 Ω ———————————————————————————————— Fall time tf — 7690 — ns PW = 5 µs ——————————————————————————————————————————— 2

2SJ399 Maximum Channel Dissipation Curve Maximum Safe Operation Area Pch (mW) 200 –1 1 ms –0.3 I D (A) PW0 m 1 150 = Channel Power Dissipation s –0.1 Drain Current D C 100 O –0.03 pe ra tio Operation in n –0.01 this area is 50 limited by R DS(on) –0.003 Ta = 25 °C –0.001 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –2.0 –0.5 V DS = –10 V Pulse Test –1.6 –0.4 I D (A) (A) –5 V ID –1.2 –4.5 V -0.3 Drain Current Drain Current –4 V –0.8 -0.2 75 °C –3.5 V Ta = –25 °C –3 V 25 °C –0.4 –0.1 –2.5 V VGS = –2 V 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ399 Static Drain to Source on State Resistance Drain to Source Saturation Voltage vs. vs. Drain Current Gate to Source Voltage 100 –0.5 Drain to Source On State Resistance R DS(on) ( Ω ) Ta = 25 °C Drain to Source Saturation Voltage V DS(on) (V) 50 Pulse Test –0.4 20 –0.3 –0.2 A 10 –0.2 5 –0.1 A VGS = –4 V –0.1 I D = –0.05 A 2 –10 V 1 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 0 –4 –8 –12 –16 –20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 5 1 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) 0.5 I D = –0.2 A –0.05 A Ta = –25 °C 4 –0.1 A 0.2 3 V GS = –4 V 75 °C I D = –0.2 A 25 °C 0.1 2 0.05 –0.1 A –0.05 A 1 VGS = –10 V 0.02 V DS = –10 V Pulse Test 0 0.01 –40 0 40 80 120 160 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ399 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 10000 100 tf 50 5000 t d(off) Switching Time t (ns) Capacitance C (pF) 20 Coss 2000 tr 10 5 t d(on) 1000 2 Ciss 500 1 0.5 VGS = –10 V 200 VGS = 0 PW = 5 µs 0.2 Crss f = 1 MHz 100 0.1 –0.1 –0.2 –0.5 –1 –2 –5 0 –10 –20 –30 –40 –50 Drain Current I D (A) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage –0.5 Pulse Test Reverse Drain Current I DR (A) –0.4 –10 V –0.3 V GS = 0 –0.2 –5 V –0.1 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) 5

2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK High speed power switching 4 4 Features • Low on–resistance 1 2 • High speed switching 3 • Low drive current 1 • 4 V gate drive device can be driven from 2 3 5 V source • Suitable for Switching regulator, DC – DC converter 2, 4 1. Gate • Avalanche Ratings 2. Drain 3. Source 1 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –50 A ——————————————————————————————————————————— Avalanche current IAP*** –50 A ——————————————————————————————————————————— Avalanche energy EAR*** 214 mJ ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SJ408 L , 2SJ408 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.015 0.02 Ω ID = –25 A resistance VGS = –10 V * ————————————————————————– — 0.02 0.028 Ω ID = –25 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 30 50 — S ID = –25 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 8200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 3650 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 750 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 55 — ns ID = –25 A ———————————————————————————————— Rise time tr — 340 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 1150 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 620 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.0 — V IF = –50 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 250 — ns IF = –50 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– * Pulse Test 2

2SJ408 L , 2SJ408 S Power vs. Temperature Derating Maximum Safe Operation Area 200 –1000 Pch (W) –300 I D (A) 10 150 10 µs –100 0 PW µs 1m Channel Dissipation Drain Current DC = s 10 100 –30 Op m er s( Operation in at ion 1s this area is ho –10 (T t) limited by R DS(on) c= 50 25 °C ) –3 –1 Ta = 25 °C 0 50 100 150 200 –0.5 –1 –2 –5 –10 –20 –50 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –100 –50 10 V Pulse Test V DS = –10 V 6V –80 4V Pulse Test I D (A) –40 (A) 3.5 V ID –60 –30 Drain Current Drain Current 25°C –40 3V Tc = 75°C –20 –25°C –20 VGS = 2.5 V –10 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SJ408 L , 2SJ408 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –2.0 100 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test 50 –1.6 VGS = –4 V 20 –1.2 Drain to Source Voltage 10 –10 V I D = –50 A –0.8 5 –0.4 –20 A 2 –10 A Pulse Test 1 0 –2 –4 –6 –8 –10 –1 –3 –10 –30 –100 –300 –1000 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 100 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 50 R DS(on) ( Ω) Pulse Test 50 Tc = –25 °C 40 25 °C 20 I D = –50 A 30 10 75 °C V GS = –4 V –10 A –20 A 5 20 –10 A –20 A 2 10 –10 V –50 A 1 V DS = –10 V Pulse Test 0 0.5 –40 0 40 80 120 160 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SJ408 L , 2SJ408 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 100000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz 500 30000 Capacitance C (pF) 200 10000 Ciss 100 3000 Coss 50 1000 Crss 20 di / dt = 50 A / µs 300 V GS = 0, Ta = 25 °C 10 100 –1 –2 –5 –10 –20 –50 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 5000 V GS = –10 V, V DD = –30 V V GS (V) V DD = –10 V V DS (V) –25 V PW = 5 µs, duty < 1 % –20 –50 V –4 2000 Switching Time t (ns) t d(off) 1000 Gate to Source Voltage tf Drain to Source Voltage –40 –8 V DD = –50 V 500 –25 V V DS –10 V tr –60 –12 200 V GS –80 –16 100 t d(on) I D = –50 A 50 –100 –20 0 200 400 600 800 1000 –1 –2 –5 –10 –20 –50 –100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SJ408 L , 2SJ408 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating –100 250 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = –50 A Reverse Drain Current I DR (A) –80 200 V DD = –25 V duty < 0.1 % –10 V V GS = 0 Rg > 50 Ω –60 150 –5 V –40 100 –20 50 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SJ408 L , 2SJ408 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 1.25 °C/W, Tc = 25 °C 0.02 PW PDM D= T 0.03 1 0.0 lse PW pu ot 1sh T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 7

2SJ409 L , 2SJ409 S SILICON P-CHANNEL MOS FET Application LDPAK 4 High speed power switching 4 Features 1 1 2 2 3 • Low on–resistance 3 • High speed switching • Low drive current 2, 4 • 4 V Gate drive device can be driven 1 from 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ409 L , 2SJ409 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS –100 — — V ID = –10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — –250 µA VDS = –80 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 0.12 0.16 Ω ID = –10 A resistance VGS = –10 V * ————————————————————————– — 0.16 0.22 Ω ID = –10 A VGS = –4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A VDS = –10 V * ———————————————————————————————————————————– Input capacitance Ciss — 1860 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 145 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 15 — ns ID = –10 A ———————————————————————————————— Rise time tr — 115 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 170 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — –1.05 — V IF = –20 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 280 — ns IF = –20 A, VGS = 0, recovery time diF / dt = 50 A / µs ———————————————————————————————————————————– See characteristics curves of 2SJ221 2

2SJ409 L , 2SJ409 S Power vs. Temperature Derating 120 Pch (W) 80 Channel Dissipation 40 0 50 100 150 Case Temperature Tc (°C) 3

2SJ410 Silicon P Channel MOS FET 1st. Edition Jun. 1995 Preliminary Application TO–220FM High speed power switching Features D • Low on–resistance 2 • High speed switching • Low drive current 1 • No secondary breakdown G 1. Gate • Suitable for switching regulator and DC–DC 2. Drain converter and motor driver 1 2 3. Source 3 3 S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –6 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –24 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –6 A ——————————————————————————————————————————— Channel dissipation Pch** –30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SJ410 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –200 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS =–160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.7 0.9 Ω ID = –3 A resistance VGS = –10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.0 3.5 — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (920) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (190) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (70) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (17) — ns ID = –3 A ———————————————————————————————— Rise time tr — (40) — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — (85) — ns RL = 6Ω ———————————————————————————————— Fall time tf — (45) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –6 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (170) — ns IF = –6 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SJ410 Maximum Channel Dissipation Curve 40 Pch (W) 30 Channel Dissipation 20 10 0 50 100 150 200 Case Temperature Tc (°C) Package Dimensions Unit : mm • TO–220FM 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 φ 3.2 ± 0.2 17.0 ± 0.3 0.6 12.0 ± 0.3 1.2 ± 0.2 4.45 ± 0.3 2.0 ± 0.3 1.4 ± 0.2 14.0 ± 1.0 2.7 5.0 ± 0.3 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code TO–220FM EIAJ SC–72 JEDEC — 3

2SJ443 Silicon P Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 3 • 4 V Gate drive can be driven from 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –10 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc=25°C 1

2SJ443 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.13 0.18 Ω ID = –5A resistance VGS = –10 V * ———————————————————————— — 0.18 0.25 Ω ID = –5A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = –5A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 900 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 460 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 130 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = –5A ———————————————————————————————— Rise time tr — 65 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 170 — ns RL =6 Ω ———————————————————————————————— Fall time tf — 105 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.1 — V IF = –10A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = –10 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ172, 2SJ175 2

2SJ450 Silicon P Channel MOS FET 1st. Edition Jun. 1995 Application UPAK High speed power switching 1 Features 2 3 • Low on-resistance. D • Low drive power 2 • High speed switching 4 • 2.5V gate drive device. 1 G 1. Gate 2. Drain 3. Source 3 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –1 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –2 A ——————————————————————————————————————————— Drain peak current IDR –1 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** When using aluminium ceramic board (12.5 x 20 x 70 mm) 1

2SJ450 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –50 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.85 1.2 Ω ID = –0.5 A resistance VGS = –4 V * ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.1 1.9 Ω ID = –0.3 A resistance VGS = –2.5 V * ——————————————————————————————————————————— Fowerd transfer admittance |yfs| 0.6 1.0 — S ID = –0.5 A VDS = –10 V ——————————————————————————————————————————— Input capacitance Ciss — 150 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 72 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 24 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 6 — µs VGS = –10 V, ID = –0.5 A ———————————————————————————————— Rise time tr — 9 — µs RL = 60 Ω ———————————————————————————————— Turn–off delay time td(off) — 50 — µs ———————————————————————————————— Fall time tf — 35 — µs ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –1 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = –1 A, VGS = 0 recovery time diF / dt = 50A / µs ——————————————————————————————————————————— * Pulse Test Marking is "UY". 2

2SJ450 Power vs. Temperature Derating 2.0 Test Condition : When using the aliminium Ceramic Pch (W) board (12.5 x 20 x 70 mm) 1.5 Channel Dissipation 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • UPAK 4.5 ± 0.1 1.8 max 1.5 ± 0.1 0.4 0.44 max 4 2.5 ± 0.1 f 1 4.25 max 0.53 max 0.48 max 1 2 3 0.44 max 0.8 min 1.5 1.5 3.0 Hitachi Code UPAK EIAJ SC–62 JEDEC UPAK 3

2SJ451 Silicon P Channel MOS FET 1st. Edition Jun. 1995 Application MPAK Low frequency power switching 3 Features 1 • Low on-resistance. D 3 2 • Low drive power • 2.5V gate drive device. • Small package (MPAK). 2 G 1. Source 2. Gate 3. Drain 1 S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –0.2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –0.4 A ——————————————————————————————————————————— Channel dissipation Pch** 150 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % Marking is "ZK–". 1

2SJ451 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –100 µA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1.0 µA VDS = –16 V, VGS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±2.0 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –10 µA, VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 2.3 3.5 Ω ID = –100 mA resistance VGS = –4 V * ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 5.0 9.0 Ω ID = –40 mA resistance VGS = –2.5 V * ——————————————————————————————————————————— Foward transfer admittance |yfs| 0.13 0.23 — S ID = –100 mA VDS = –10 V ——————————————————————————————————————————— Input capacitance Ciss — 2.4 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 31 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.6 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 0.17 — µs VGS = –10 V, ID = –0.1 A ———————————————————————————————— Rise time tr — 0.68 — µs RL = 100 Ω ———————————————————————————————— Turn–off delay time td(off) — 3.0 — µs ———————————————————————————————— Fall time tf — 2.8 — µs ——————————————————————————————————————————— * Pulse Test 2

2SJ451 Maximum Channel Dissipation Curve 200 Pch (mW) 150 Channel Dissipation 100 50 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • MPAK + 0.1 0.65 – 0.3 + 0.10 + 0.10 0.4 – 0.05 0.16 – 0.06 + 0.2 2.8 – 0.6 0 ~ 0.15 1.5 + 0.1 0.65 – 0.3 0.95 0.95 1.9 + 0.3 2.8 – 0.1 0.3 + 0.2 1.1– 0.1 Hitachi Code MPAK EIAJ SC–59A JEDEC — 3

2SJ452 Silicon P Channel MOS FET 2nd. Edition Jun. 1995 Application MPAK Low frequency power switching 3 Features 1 • Low on-resistance. D 3 2 • Low drive power • 2.5V gate drive device. • Small package (MPAK). 2 G 1. Source 2. Gate 3. Drain 1 S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –50 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –0.2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –0.4 A ——————————————————————————————————————————— Channel dissipation Pch** 150 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % Marking is "ZM–". 1

2SJ452 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –50 — — V ID = –100 µA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –1.0 µA VDS = –40 V, VGS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±2.0 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V ID = –10 µA, VDS = –5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 5.0 7.0 Ω ID = –100 mA resistance VGS = –4 V * ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 7.5 12.0 Ω ID = –40 mA resistance VGS = –2.5 V * ——————————————————————————————————————————— Foward transfer admittance |yfs| 0.1 0.19 — S ID = –100 mA VDS = –10 V ——————————————————————————————————————————— Input capacitance Ciss — 1.1 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 15.7 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 0.12 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 0.45 — µs VGS = –10 V, ID = –0.1 A ———————————————————————————————— Rise time tr — 1.3 — µs RL = 300 Ω ———————————————————————————————— Turn–off delay tiem td(off) — 8.4 — µs ———————————————————————————————— Fall time tf — 5.6 — µs ——————————————————————————————————————————— * Pulse Test 2

2SJ452 Maximum Channel Dissipation Curve 200 Pch (mW) 150 Channel Dissipation 100 50 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • MPAK + 0.1 0.65 – 0.3 + 0.10 + 0.10 0.4 – 0.05 0.16 – 0.06 + 0.2 2.8 – 0.6 0 ~ 0.15 1.5 + 0.1 0.65 – 0.3 0.95 0.95 1.9 + 0.3 2.8 – 0.1 0.3 + 0.2 1.1– 0.1 Hitachi Code MPAK EIAJ SC–59A JEDEC — 3

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features 3 1 • Suitable for direct mounting 2 3 • High forward transfer admittance • Excellent frequency response • Enhancement-mode 1 1. Gate 2. Source (Flange) 3. Drain 2 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK213 VDSX 140 V ————— ——— 2SK214 160 ————— ——— 2SK215 180 ————— ——— 2SK216 200 ——————————————————————————————————————————— Gate to source voltage VGSS ±15 V ——————————————————————————————————————————— Drain current ID 500 mA ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 500 mA ——————————————————————————————————————————— Channel dissipation Pch 1.75 W ————————————————————————— Pch* 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –45 to +150 °C ——————————————————————————————————————————— * Value at TC = 25 °C 1

2SK213, 2SK214, 2SK215, 2SK216 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK213 V(BR)DSX 140 — — V ID = 1 mA, VGS = –2 V breakdown voltage ———— ———————————— 2SK214 160 — — V ———— ———————————— 2SK215 180 — — V ———— ———————————— 2SK216 200 — — V ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±15 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source voltage VGS(on) 0.2 — 1.5 V ID = 10 mA, VDS = 10 V * ——————————————————————————————————————————— Drain to source saturation VDS(sat) — — 2.0 V ID = 10 mA, VGD = 0 * voltage ——————————————————————————————————————————— Forward transfer admittance |yfs| 20 40 — mS ID = 10 mA, VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 90 — pF ID = 10 mA, VDS = 10 V, ———————————————————————————————— Reverse transfer capacitance Crss — 2.2 — pF f = 1 MHz ——————————————————————————————————————————— * Pulse Test 2

2SK213, 2SK214, 2SK215, 2SK216 Power vs. Temperature Derating Typical Output Characteristics 60 500 3.5 TC = 25°C 3.0 Channel Dissipation Pch (W) 400 Drain Current ID (mA) 40 2.5 300 2.0 200 20 1.5 100 1.0 VGS = 0.5 V 0 50 100 150 0 4 8 12 16 20 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 500 TC = 25°C 0.8 VDS = 20 V C 25° 40 400 25 Drain Current ID (mA) Drain Current ID (mA) =– 0.7 75 TC 30 300 0.6 0.5 20 200 0.4 10 0.3 100 0.2 VGS = 0.1V 0 20 40 60 80 100 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate Source Voltage VGS (V) 3

2SK213, 2SK214, 2SK215, 2SK216 Forward Transfer Admittance Typical Transfer Characteristics vs. Drain Current Forward Transfer Admittance yfs (mS) 100 200 VDS = 20 V °C –25 100 80 25 Drain Current ID (mA) 75 TC = 50 60 20 40 10 TC = 25°C 20 5 VDS = 20 V 0 0.4 0.8 1.2 1.6 2.0 2 5 10 20 50 100 200 Gate Source Voltage VGS (V) Drain Current ID (mA) Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (mS) 500 100 10 TC = 25°C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 100 k 1M 10 M 50 M Frequency f (HZ) 4

2SK740 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 150 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch* 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK740 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 120 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1200 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 550 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 85 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 50 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 220 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK740 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 Channel Dissipation Pch (W) 10 µs 0 µs Drain Current ID (A) PW pe D 40 10 1 C = m s (1 C = O 10 ion s m ra t Sh (T ot 5°C ) 20 1.0 2 ) Operation in this area is limited by RDS (on) Ta = 25°C 0.1 0 50 100 150 1 10 100 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 15V 10 V Pulse Test –25°C 75°C 8V 16 6V 16 V = 10 V TC = 25°C DS Drain Current ID (A) Drain Current ID (A) Pulse Test 12 5.5 V 12 8 8 5V 4 4 VGS = 4.5 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK740 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 5 0.5 PulseTest Drain to Source Saturation Voltage VGS = 10 V 4 0.2 0.1 RDS (on) (Ω) VDS (on) (V) 3 15 V 0.05 2 Pulse Test ID = 10 A 0.02 1 5A 0.01 2A 0.005 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance yfs (S) VGS = 10 V Pulse Test VGS = 10 V 0.4 20 Pulse Test –25°C 10 Ta = 25°C RDS (on) (Ω) 0.3 5A 10 A 5 75°C 0.2 2 2A 0.1 1.0 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK740 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 500 10,000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz 200 Capacitance C (pF) Ciss 100 1,000 50 Coss di/dt = 50 A/µs 20 VGS = 0 100 Ta = 25°C 10 Pulse Test Crss 5 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 200 20 500 VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) PW = 2µs, duty < 1 % 160 VDD = 100 V 16 200 Switching Time t (ns) tr 50 V 100 td (off) 120 25 V 12 VDS tf 50 VGS 80 8 td (on) 20 ID = 10 A 40 VDD = 100 V 4 10 50 V 25 V 0 5 0 8 16 24 32 40 0.2 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK740 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V 4 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 2.5°C/W, TC = 25°C 0.05 PDM 0.02 0.03 Pu lse D = PW 1 t T 0.0 Sho PW 1 T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK740 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin RL 10 % Vout 10 % 10 % 50 Ω . 90 % 90 % Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK741 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK741 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.40 0.55 Ω ID = 4 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.7 4.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 820 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 370 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 48 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 400 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK741 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 Channel Dissipation Pch (W) 10 10 µs Drain Current ID (A) 0 40 10 P µs D W= C 1 op 10 m s er m at s ( io n 1S (T ho 20 1.0 C = t) 25 Operation in this area is °C limited by RDS (on) ) Ta = 25°C 0.1 0 50 100 150 1 10 100 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 8V VDS = 10 V 15 V 6V Pulse Test 5.5 V 8 8 Drain Current ID (A) Drain Current ID (A) Pulse Test 6 6 5V 4 4 4.5 V –25°C 2 2 75°C TC = 25°C VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK741 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 10 5 Drain to Source Saturation Voltage Pulse Test PulseTest 8 2 1.0 RDS (on) (Ω) VDS (on) (V) 6 VGS = 10 V 0.5 ID = 10 A 4 15 V 0.2 5A 2 0.1 2A 0.05 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 50 Forward Transfer Admittance yfs (S) VGS = 10 V VDS = 10 V Pulse Test 10 A Pulse Test 0.8 20 5A 10 RDS (on) (Ω) 0.6 –25°C ID = 2 A 5 Ta = 25°C 0.4 75°C 2 0.2 1.0 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK741 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs.Drain to Source Voltage 5,000 10,000 VGS = 0 di/dt = 50 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) f = 1 MHz VGS = 0 2,000 Pulse Test Capacitance C (pF) 1,000 1,000 Ciss 500 Coss 200 100 100 Crss 50 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) PW = 2µs, duty < 1 % 400 VDD = 200 V 16 200 Switching Time t (ns) 100 V 100 td (off) 300 50 V 12 tf 50 VDS VGS tr 200 8 20 ID = 7 A td (on) 100 VDD = 200 V 4 10 100 V 50 V 0 5 0 8 16 24 32 40 0.2 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK741 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 2.5°C/W, TC = 25°C 0.05 PDM 0.02 0.03 uls e D = PW 1 tP T 0.0 Sho PW 1 T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK741 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK970 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK970 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * resistance ——————— ——————————– 0.17 0.22 ID = 5 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 220 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 140 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 125 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK970 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 Channel Dissipation Pch (W) 10 30 is µs n) a 10 ms s (1 = (o are Drain Current ID (A) 0 PW pe DC µs s 1 R thi 40 10 = atio O by in DS 10 n d on r m (T C ite ati lim per 3 Sh 25 O ot °C ) 20 1.0 ) 0.3 Ta = 25°C 0.1 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V Pulse Test VDS = 10 V 4V Pulse Test 8 5V 8 Drain Current ID (A) Drain Current ID (A) 3.5 V 6 6 3.0 V 4 4 2 2.5 V 2 75°C –25°C VGS = 2.0 V TC= 25°C 0 2 4 6 8 10 0 1.0 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK970 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 1.0 Pulse Test Drain to Source Saturation Voltage Pulse Test 0.5 VGS = 4 V 1.6 10 A 0.2 RDS (on) (Ω) VDS (on) (V) 1.2 10 V 0.1 0.8 5A 0.05 0.4 ID = 2 A 0.02 0.01 0 2 4 6 8 10 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance yfs (S) Pulse Test VDS = 10 V ID = 10 A Pulse Test 0.4 20 TC = 25°C 5A –25°C 2A 10 RDS (on) (Ω) 0.3 VGS = 4 V 5 0.2 75°C 2 0.1 2A 5A 1.0 VGS = 10 V 10 A 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1.0 2 5 10 Case Temperature TC (°C) Drain Current ID (A) 4

2SK970 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) VGS = 0 f =1MHz 200 Pulse Test 3000 Capacitance C (pF) 100 1000 Ciss 50 300 Coss 20 100 Crss 10 30 5 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) 80 16 200 Switching Time t (ns) VDD = 50 V 25 V 100 60 10 V 12 tf VDS 50 VGS = 10 V 40 8 PW = 2 µs, duty < 1 % VDD = 50 V VGS 20 tr 20 4 25 V ID = 10 A 10 10 V td (on) 0 5 0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK970 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 10 V 15 V 4 5V VGS = 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 4.17°C/W, TC = 25°C 0.02 PDM 1 D = PW 0.03 0.0 Pulse T t PW ho 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK970 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK971 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 40 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK971 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.055 0.065 Ω ID = 8 A, VGS = 10 V * resistance ——————— ——————————– 0.075 0.095 ID = 8 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 450 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 140 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK971 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) 100 Drain Current ID (A) ea 10 40 10 ar µs 0 n) R is 30 µs (o DC by th S PW d in D 1 O m ms ite ion pe = s 10 10 ra lim rat tio is pe n (1 O 20 (T Sh C = 3 o t) 25 °C ) 1.0 Ta = 25°C 0.5 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V Pulse Test 4V 5V VDS = 10 V 16 3.5 V 16 Pulse Test Drain Current ID (A) Drain Current ID (A) 12 12 3.0 V 8 8 4 VGS = 2.5 V 4 75°C –25°C TC= 25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK971 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 0.5 Pulse Test Drain to Source Saturation Voltage Pulse Test VGS = 4 V 1.6 0.2 20 A 0.1 RDS (on) (Ω) VDS (on) (V) 1.2 10 V 0.05 0.8 10 A 0.02 0.4 ID = 5 A 0.01 0.005 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.20 50 Forward Transfer Admittance yfs (S) Pulse Test VDS = 10 V Pulse Test –25°C 0.16 20 TC = 25°C ID = 10 A 10 RDS (on) (Ω) 0.12 5A 5 75°C VGS = 4 V 0.08 5A 2 0.04 10 A VGS = 10 V 20 A 1.0 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK971 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) 500 VGS = 0 f = 1MHz Pulse Test 3000 Capacitance C (pF) 200 1000 Ciss 100 Coss 300 50 Crss 100 20 30 10 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) 80 16 200 Switching Time t (ns) VDD = 50 V 25 V 100 tf 60 10 V 12 VDS 50 tr 40 8 VGS VGS = 10 V 20 PW = 2µs, duty < 1 % 20 VDD = 50 V 4 td (on) ID = 15 A 10 25 V 10 V 0 5 0 8 16 24 32 40 0.2 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK971 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 10 V 12 15 V 5V 8 VGS = 0, – 5 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 3.13°C/W, TC = 25°C PDM 0.02 e 1 uls 0.03 0.0 ot P D = PW 1 Sh PW T T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK971 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK972 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK972 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * resistance ——————— ——————————– 0.05 0.06 ID = 15 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 15 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 130 — ns RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 25 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK972 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) is 10 ea 100 µs Drain Current ID (A) ar 10 0 is 40 µs n) R th D (o C PW by in S 30 D O d ion 1 0m pe = m s ite rat 1 ra s (1 lim pe 10 tio n O (T 20 Sh C = ot 3 25 ) °C ) Ta = 25°C 1.0 0.5 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 10 V 8V 75°C 6V 4.5 V VDS = 10 V TC= 25°C 40 40 4.0 V Pulse Test –25°C Drain Current ID (A) Drain Current ID (A) Pulse Test 30 30 3.5 V 20 20 3.0 V 10 10 VGS = 2.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK972 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on Static Resistance 5 0.5 Pulse Test Pulse Test Drain to Source Saturation Voltage 4 0.2 VGS = 4 V 0.1 RDS (on) (Ω) VDS (on) (V) 3 0.05 10 V ID = 50 A 2 0.02 1 20 A 0.01 10 A 0.005 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.10 100 Forward Transfer Admittance yfs (S) Pulse Test VDS = 10 V ID = 20 A Pulse Test 50 0.08 10 A –25°C TC = 25°C VGS = 4 V 20 RDS (on) (Ω) 0.06 20 A 5 A 10 A 10 75°C 0.04 5A 5 0.02 VGS = 10 V 2 0 1 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Drain Current ID (A) 4

2SK972 Body to Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1,000 10,000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) VGS = 0 500 Pulse Test 3,000 f = 1 MHz Capacitance C (pF) Ciss 200 1,000 Coss 100 300 Crss 50 100 20 30 10 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 VDD = 50 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 25 V 500 td (off) 80 16 Switching Time t (ns) 10 V 200 tf 60 12 VDS VGS 100 40 8 tr 50 VGS = 10 V 20 VDD = 50 V 4 PW = 2µs, duty < 1 % 25 V ID = 25 A 20 td (on) 10 V 0 10 0 20 40 60 80 100 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK972 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 10 V 30 15 V 20 5V VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c(t) = γS (t) · θch–c 0.1 0.05 θch–c = 2.5°C/W, TC = 25°C 0.02 PDM 1 lse 0.03 0.0 ot Pu D = PW h T 1S T PW 0.01 10 µ 100µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK972 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 • Low on-resistance 12 2, 4 3 • High speed switching • Low drive current S type L type • 4 V gate drive device – Can be driven from 5 V source 1. Gate 1 • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2 A ——————————————————————————————————————————— Drain peak current ID(peak)* 8 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK973 L , 2SK973 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.25 0.35 Ω ID = 1 A, VGS = 10 V * resistance ——————— ——————————– 0.40 0.50 ID = 1 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.2 2.0 — S ID = 1 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 240 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 115 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 35 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 4 — ns ID = 1 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 15 — ns RL = 30 Ω ———————————————————————————————— Turn-off delay time td(off) — 80 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 2 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 70 — ns IF = 2 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK973 L , 2SK973 S Power vs. Temperature Derating Maximum Safe Operation Area 15 50 30 Channel Dissipation Pch (W) is 10 ea 10 µs ar Drain Current ID (A) is ) 10 th on in DS ( 10 3 PW 0 n io y R µs t = 1 ra b DC 10 m pe ited m s 1.0 O Op s( lim er 1 ati Sh 5 on ot (T ) 0.3 C = 25 Ta = 25°C °C 0.1 ) 0.05 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V Pulse Test –25°C 5V VDS = 10 V 75°C 4 4V 4 3.5 V Pulse Test TC= 25°C Drain Current ID (A) Drain Current ID (A) 3 3 3V 2 2 1 2.5 V 1 VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK973 L , 2SK973 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 5 Pulse Test Drain to Source Saturation Voltage Pulse Test 1.6 2 5A VGS = 4 V 1.0 VDS (on) (V) RDS (on) (Ω) 1.2 0.5 0.8 10 V 2A 0.2 0.4 ID = 1 A 0.1 0.05 0 2 4 6 8 10 0.2 0.5 1.0 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 10 Forward Transfer Admittance yfs (S) Pulse Test VDS = 10 V –25°C Pulse Test 5 0.8 TC = 25°C ID = 2 A 2 RDS (on) (Ω) 0.6 1A VGS = 4 V 75°C 1.0 0.4 0.5 5A 0.2 VGS = 10 V 1 A, 2 A 0.2 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK973 L , 2SK973 S Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C 200 VGS = 0 300 Ciss Pulse Test Capacitance C (pF) 100 100 Coss 50 30 Crss 20 10 10 3 5 1 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 100 td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 50 80 16 tf Switching Time t (ns) VDD = 50 V 25 V 20 60 12 tr 10 V VDS 10 40 8 VDD = 50 V VGS 5 td (on) 20 4 25 V ID = 2 A 2 VGS = 10 V 10 V PW = 2µs, duty < 1 % 0 1 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK973 L , 2SK973 S Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 10 V 3 15 V 2 5V VGS = 0, –5 V 1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c(t) = γS (t) · θch–c 0.1 0.05 θch–c = 12.5°C/W, TC = 25°C PDM 0.02 lse 0.03 0.01 ot Pu D = PW h PW T 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK973 L , 2SK973 S Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 • Low on-resistance 12 2, 4 3 • High speed switching S type L type • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1. Gate 1 • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(peak)* 12 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK974 L , 2SK974 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.15 0.18 Ω ID = 2 A, VGS = 10 V * resistance ——————— ——————————– 0.20 0.25 ID = 2 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 230 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 2 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 25 — ns RL = 15 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 85 — ns IF = 3 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK974 L , 2SK974 S Power vs. Temperature Derating Maximum Safe Operation Area 30 100 Channel Dissipation Pch (W) is 30 ea ar Drain Current ID (A) is ) th (on 10 µs 20 10 in DS 10 n io R 0 at y PW µs p er ed b = 3 O mit 10 1 DC m m li Op s (1 s 10 er Sh 1.0 (T at o C = ion t) 25 °C 0.3 Ta = 25°C ) 0.1 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V Pulse Test 5V 8 4V VDS = 10 V 8 Pulse Test Drain Current ID (A) 3.5 V Drain Current ID (A) 6 6 3V 4 4 –25°C 2 2.5 V 2 75°C TC= 25°C VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK974 L , 2SK974 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 1.0 5 Pulse Test Drain to Source Saturation Voltage Pulse Test 0.8 5A 2 1.0 RDS (on) (Ω) VDS (on) (V) 0.6 0.5 0.4 2A VGS = 4 V 0.2 0.2 ID = 1 A 10 V 0.1 0.05 0 2 4 6 8 10 0.2 0.5 1.0 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 Forward Transfer Admittance  yfs  (S) 10 Pulse Test VDS = 10 V –25°C 5 Pulse Test TC = 25°C 0.4 ID = 5 A 2 RDS (on) (Ω) 0.3 1 A, 2 A 75°C 1.0 VGS = 4 V 0.2 5A 0.5 1 A, 2 A 0.1 VGS = 10 V 0.2 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK974 L , 2SK974 S Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 VGS = 0 di/dt = 50 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) VGS = 0 f = 1 MHz 3000 200 Pulse Test Capacitance C (pF) 100 1000 Ciss 50 300 Coss 20 100 Crss 10 30 5 10 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) 80 16 200 Switching Time t (ns) VDD = 50 V 25 V 100 60 12 tf VDS 10 V 50 VGS = 10 V PW = 2 µs, duty < 1 % 40 VDD = 50 V 8 tr VGS 20 20 4 ID = 3 A 10 25 V 10 V td (on) 0 5 0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK974 L , 2SK974 S Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 10 V 15 V 4 5V 2 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 0.05 θch–c = 6.25°C/W, TC = 25°C 0.02 PDM ulse D =PW 0.03 0.01 ot P T h PW 1S T 0.01 10 µ 100µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK974 L , 2SK974 S Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK975 Silicon N-Channel MOS FET Application TO–92 MOD High speed power switching Features • Low on-resistance 12 2 3 • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source 3 • Suitable for motor drive, DC-DC converter, 1. Source power switch and solenoid drive 2. Drain TO-92MOD 3. Gate 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 1.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 4.5 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 1.5 A ——————————————————————————————————————————— Channel dissipation Pch 900 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % 1

2SK975 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(off) — 0.3 0.4 Ω ID = 1 A, VGS = 10 V * resistance ——————— ——————————– 0.4 0.55 ID = 1 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 140 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 70 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 3 — ns ID = 1 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 12 — ns RL = 30 Ω ———————————————————————————————— Turn-off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 1.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 45 — ns IF = 1.5 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK975 Power vs. Temperature Derating Maximum Safe Operation Area 1.5 10 10 0 µ 10 µs s Channel Dissipation Pch (W) 3 PW 1 Drain Current ID (A) m =1 s 1.0 0m 1.0 s( D 1S C ho O t pe ) 0.3 ra tio n 0.5 0.1 Operation in this area is limited by RDS (on) 0.03 Ta = 25°C 0.01 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V 4.5 V Pulse Test 5V 7V 4V VDS = 10 V 4 4 Pulse Test Drain Current ID (A) Drain Current ID (A) 3 3 3.5 V 2 2 3V 1 1 VGS = 2.5 V –25°C 75°C TC= 25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK975 Drain to Source Saturation Voltage Static Drain to Source On State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 1.0 5 Pulse Test Pulse Test Drain to Source Saturation Voltage 0.8 2 VGS = 4 V 2A 1.0 RDS (on) (Ω) VDS (on) (V) 0.6 0.5 10 V 0.4 1A 0.2 ID = 0.5 A 0.2 0.1 0.05 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 Forward Transfer Admittance  yfs  (S) 5 Pulse Test VDS = 10 V –25°C Pulse Test T = 25°C 0.8 ID = 2 A 2 C 1A 0.5 A 1.0 RDS (on) (Ω) 0.6 VGS = 4 V 75°C 0.5 0.4 2 A 0.5 A 0.2 1A 0.2 VGS = 10 V 0.1 0 0.05 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK975 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 1000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) 500 VGS = 0 f = 1 MHz Pulse Test 300 Ciss Capacitance C (pF) 200 100 Coss 100 30 Crss 50 10 20 3 10 1 0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 100 td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 50 V 50 80 16 tf Switching Time t (ns) 25 V 10 V VGS = 10 V 20 60 12 PW = 2 µs, duty < 1 % VDS 10 tr VDD = 50 V VGS 40 8 5 td (on) 20 4 25 V ID = 1.5 A 2 10 V 0 1 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK975 Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test Reverse Drain Current IDR (A) 1.6 10 V 1.2 15 V 5V 0.8 VGS = 0, –5 V 0.4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 6

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features 3 • Good frequency characteristic 1 • High speed switching 2 • Wide area of safe operation 3 1 1. Gate • Enhancement-mode 2. Source • Good complementary characteristics (Flange) • Equipped with gate protection diodes 3. Drain • Suitable for audio power amplifier 2 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1056 VDSX 120 V ————— ——— 2SK1057 140 ————— ——— 2SK1058 160 ——————————————————————————————————————————— Gate to source voltage VGSS ±15 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch* 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * Value at TC = 25 °C 1

2SK1056, 2SK1057, 2SK1058 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1056 V(BR)DSX 120 — — V ID = 10 mA, VGS = –10 V breakdown voltage ———— —— 2SK1057 140 ———— —— 2SK1058 160 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±15 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V ID = 100 mA, VDS = 10 V ——————————————————————————————————————————— Drain to source VDS(sat) — — 12 V ID = 7 A, VGD = 0 * saturation voltage ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 600 — pF VGS = –5 V, VDS = 10 V, ———————————————————————————————— Output capacitance Coss — 350 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 10 — pF ——————————————————————————————————————————— Turn-on time ton — 180 — ns VDD = 20 V, ID = 4 A, ———————————————————————————————— Turn-off time toff — 60 — ns ——————————————————————————————————————————— * Pulse Test 2

2SK1056, 2SK1057, 2SK1058 Power vs. Temperature Derating Maximum Safe Operation Area 150 20 Ta = 25°C Channel Dissipation Pch (W) 10 ID max (Continuous) P PW Drain Current ID (A) PW W = = 1 D 5 C 100 10 0 m O = pe 1 0 s ra s m 1 s sh tio 2 1 1 ot n sh sh (T C ot ot = 50 1.0 25 °C ) 0.5 2SK133 2SK134 2SK135 0.2 0 50 100 150 5 10 20 50 100 200 500 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 1.0 VGS = 10 V TC = 25°C VDS = 10 V 5°C 8 9 0.8 –2 25 Drain Current ID (A) Drain Current ID (A) 8 75 C= T 6 7 0.6 6 4 5 0.4 4 Pch = 100 W 2 3 0.2 2 1 0 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1056, 2SK1057, 2SK1058 Drain to Source Saturation Drain to Source Voltage vs. Voltage vs. Drain Current Gate to Source Voltage 10 10 75 Drain to Source Saturation Voltage VGD = 0 Drain to Source Voltage VDS (V) C 5 25 5° TC = 25°C = –2 8 TC 2 VDS (on) (V) 6 1.0 5 4 0.5 2 2 0.2 ID = 1 A 0.1 0.1 0.2 0.5 1.0 2 5 10 0 2 4 6 8 10 Drain Current ID (A) Gate to Source Voltage VGS (V) Input Capacitance vs. Gate Forward Transfer Admittance Source Voltage vs. Frequency 1000 Forward Transfer Admittance  yfs  (S) 3.0 Input Capacitance Ciss (pF) 1.0 500 0.3 0.1 200 0.03 TC = 25°C VDS = 10 V VDS = 10 V 0.01 ID = 2 A f = 1 MHz 100 0.003 0 –2 –4 –6 –8 –10 10 k 30 k 100 k 300 k 1 M 3 M 10 M Gate to Source Voltage VGS (V) Frequency f (Hz) 4

2SK1056, 2SK1057, 2SK1058 Switching Time vs. Drain Current 500 Switching Time Test Circuit Switching Time ton,toff (ns) 200 t on Output 2Ω 100 Input 50 t off 20 PW = 50µs 20 V duty ratio 50 Ω 10 =1% 5 0.1 0.2 0.5 1.0 2 5 10 Drain Current ID (A) Waveforms 90 % Input 10 % t on t off 10 % Output 90 % 5

2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 • High speed switching 12 3 • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1093 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * resistance ——————— ——————————– 0.17 0.22 ID = 5 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 220 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 140 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 125 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK970. 2

2SK1093 Power vs. Temperature Derating Maximum Safe Operation Area 30 100 Channel Dissipation Pch (W) 10 30 10 µs 0 µs Drain Current ID (A) PW 20 DC 10 1 = O m s (1 10 pe s ra m tio 3 n (T Sh o C = t) 10 25 1.0 Operation in this area °C is limited by RDS (on) ) 0.3 Ta = 25°C 0.1 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 θch–c = 6.25°C/W, TC = 25°C 0.05 PDM 0.02 D =PW 0.03 0.01 lse T t Pu PW ho T 1S 0.01 10 µ 100µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1094 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 • High speed switching 12 3 • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1094 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.055 0.065 Ω ID = 8 A, VGS = 10 V * resistance ——————— ——————————– 0.075 0.095 ID = 8 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 450 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 140 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK971. 2

2SK1094 Power vs. Temperature Derating Maximum Safe Operation Area 30 100 is 10 30 th 10 µs in ted Channel Dissipation Pch (W) n i PW 0 Drain Current ID (A) io m µs at li n) = 1 m 20 10 p er a is S (o D C 10 s O are R D O m s by pe ra (1 3 tio Sh n ot (T ) 10 C 1.0 = 25 °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c(t) = γS(t) · θch–c 0.1 θch–c = 5.0°C/W, TC=25°C 0.05 PDM 0.02 D = PW 0.03 0.01 lse T hot Pu PW 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1095 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V * ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * resistance ——————— ——————————– 0.05 0.06 ID = 15 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 15 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 130 — ns RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 25 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characterist curves of 2SK972. 2

2SK1095 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) 100 10 Drain Current ID (A) is µs th 10 40 in ted 0 n i 1 PW µs 30 tio lim ) m D ra is (on s = C pe ea DS 10 O 10 O ar y R pe m s ra b (1 tio 20 Sh n (T C ot 3 ) = 25 °C 1.0 ) Ta = 25°C 0.5 0 50 100 150 1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 θch–c(t) = γS(t) · θch–c 0.1 θch–c = 4.17°C/W, TC = 25°C 0.05 PDM 0.03 D = PW 0.02 ulse T 0.01 hot P PW 1 S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1151 L , 2SK1152 L , 2SK1151 S , 2SK1152 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • Low on-resistance 3 • High speed switching 12 2, 4 3 • Low drive current S type L type • No secondary breakdown • Suitable for switching regulator and DC-DC converter 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1151 VDSS 450 V ————— ——— 2SK1152 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 1.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 6 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 1.5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source 2SK1151 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1152 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1151 IDSS — — 100 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1152 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1151 RDS(on) — 3.5 5.5 Ω ID = 1 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1152 — 4.0 6.0 ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.6 1.1 — S ID = 1 A, VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 160 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 45 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 5 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 1 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 10 — ns RL = 30 Ω ———————————————————————————————— Turn-off delay time td(off) — 20 — ns ———————————————————————————————— Fall time tf — 10 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 1.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 220 — ns IF = 1.5 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Power vs. Temperature Derating Maximum Safe Operation Area 30 10 10 n) ted his 10 Channel Dissipation Pch (W) µs 3 i t 0 µs DS lim in R is ion 1 Drain Current ID (A) PW m by rea rat D (o 20 C s a pe 1.0 = O O 10 pe m ra s tio (1 0.3 n Sh (T ot C ) = 10 0.1 25 °C ) 0.03 2SK1151 Ta = 25°C 2SK1152 0.01 0 50 100 150 1 10 100 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 2.0 2.0 15 V 5V VDS = 20 V Pulse Test 6V Pulse Test 1.6 1.6 10 V Drain Current ID (A) Drain Current ID (A) 4.5 V 1.2 1.2 0.8 0.8 4V –25°C 75°C 0.4 0.4 VGS = 3.5 V TC = 25°C 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 20 100 Static Drain to Source on State Resistance Drain to Source Saturation Voltage Pulse Test 50 Pulse Test 16 20 VGS = 10 V RDS (on) (Ω) VDS (on) (V) 12 2A 10 8 5 15 V 1A 4 ID = 0.5 A 2 1 0 4 8 12 16 20 0.05 0.1 0.2 0.5 1.0 2 5 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Forward Transfer Admittance yfs (S) 10 5 Static Drain-Source on State Resistance ID = 2 A VGS = 10 V VDS = 20 V 8 Pulse Test 2 Pulse Test –25°C 1.0 RDS (on) (Ω) 6 1A TC = 25°C 0.5 75°C 0.5 A 4 0.2 2 0.1 0 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1,000 1,000 VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 500 di/dt = 100A/µs, Ta = 25°C VGS = 0 Pulse Test Ciss Capacitance C (pF) 200 100 100 Coss 50 10 20 Crss 10 1 0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 100 100 V VGS = 10 V PW = 2 µs, duty < 1% Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 250 V 50 400 16 VDS 400 V Switching Time t (ns) td (off) 20 300 12 tf VGS 10 200 8 td (on) 5 ID = 1.5 A tr 100 VDD = 400 V 4 250 V 2 100 V 0 1 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current IDR (A) 1.6 Pulse Test 1.2 0.8 0.4 5 V,10 V VGS=0, –10V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c(t) = γS (t) · θch–c 0.1 0.05 θch–c = 6.25°C/W, TC = 25°C PDM 0.02 D = PW 0.03 ls e T 0.01 ot Pu PW h 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1151 L , 2SK1151 S , 2SK1152 L , 2SK1152 S Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1153, 2SK1154 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 3 • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1153 VDSS 450 V ————— ——— 2SK1154 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1153, 2SK1154 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1153 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1154 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1153 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1154 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1153 RDS(on) — 2.0 2.8 Ω ID = 2 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1154 — 2.2 3.0 ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 2.5 — S ID = 2 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 330 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 90 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 15 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 7 — ns ID = 2 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 20 — ns RL = 15 Ω ———————————————————————————————— Turn-off delay time td(off) — 30 — ns ———————————————————————————————— Fall time tf — 20 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 3 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1153, 2SK1154 Power vs. Temperature Derating Maximum Safe Operation Area 60 50 20 Channel Dissipation Pch (W) 10 10 is th Drain Current ID (A) 10 µs 5 in ted 0 40 n i µs tio lim ) D 1 PW ra is (on e a S C m 2 p O s = O are R D pe 10 0.1 by ra tio m s n (1 20 0.5 (T sh C = ot 25 ) 0.2 °C Ta = 25°C ) 0.01 2SK1154 2SK1153 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V –25°C Pulse Test 8V 5.5 V 4 VDS = 10 V 4 6V Pulse Test Drain Current ID (A) Drain Current ID (A) TC = 25°C 5V 3 3 75°C 2 2 4.5 V 1 1 VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1153, 2SK1154 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 20 50 Drain to Source Saturation Voltage Pulse Test Pulse Test 16 20 10 VGS = 10 V RDS (on) (Ω) VDS (on) (V) 12 5 8 3A 15 V 2 2A 4 ID = 1 A 1.0 0.5 0 4 8 12 16 20 0.1 0.2 0.5 1.0 2 5 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 5 5 Forward Transfer Admittance yfs (S) VDS = 10 V –25°C VGS = 10 V Pulse Test TC = 25°C 4 Pulse Test 2 3A 1.0 RDS (on) (Ω) 3 75°C 2A 0.5 ID = 1 A 2 0.2 1 0.1 0 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1153, 2SK1154 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1,000 1,000 Ciss Reverse Recovery Time trr (ns) 500 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test VGS = 0 Capacitance C (pF) 200 100 f = 1 MHz Coss 100 50 10 Crss 20 10 1 0.05 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VDD = 100 V VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 250 V PW = 2µs, duty < 1% 400 16 200 VDS 400 V Switching Time t (ns) 100 300 12 VGS 50 td (off) 200 8 20 tf VDD = 400 V ID = 3 A 100 4 tr 250 V 10 td (on) 100 V 0 5 0 4 8 12 16 20 0.05 0.1 0.2 0.5 1.0 2 5 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1153, 2SK1154 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test Reverse Drain Current IDR (A) 4 3 2 1 5 V, 10 V VGS=0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c(t) = γS (t) · θch–c 0.1 θch–c = 4.17°C/W, TC = 25°C 0.05 PDM 0.02 D = PW 0.03 lse T 0.01 t Pu PW o 1 Sh T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1153, 2SK1154 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T Wavewforms RL 90 % 50 Ω . Vin 10 % Vin = 10 V VDD = 30 V . Vout 10 % 10 % 90 % 90 % td (on) tr td (off) tf 7

2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 3 • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1155 VDSS 450 V ————— ——— 2SK1156 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1155, 2SK1156 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1155 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1156 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1155 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1156 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1155 RDS(on) — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1156 — 1.2 1.5 ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 160 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 2.5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 25 — ns RL = 12 Ω ———————————————————————————————— Turn-off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 5 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1155, 2SK1156 Power vs. Temperature Derating Maximum Safe Operation Area 60 50 20 10 Channel Dissipation Pch (W) 10 µs 10 0 µs Drain Current ID (A) ea PW 1 Ar m ) y R this 40 5 n (o D = s DS d b in C 10 ite ion O Lim at m is per 2 pe s O ra (1 1.0 tio sh n ot (T ) 20 0.5 C = 25 °C 0.2 ) Ta = 25°C 2SK1156 0.1 2SK1155 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V Pulse Test –25°C 6V TC = 25°C 5.5 V VDS = 20 V 8 8 Pulse Test Drain Current ID (A) Drain Current ID (A) 75°C 6 6 5.0 V 4 4 4.5 V 2 2 VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1155, 2SK1156 Drain to Source Saturation Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Static Drain to Source on State Resistance 10 10 Pulse Test Pulse Test 5 VGS = 10 V 8 2 15 V RDS (on) (Ω) 6 5A 1.0 4 0.5 2A 2 ID = 1 A 0.2 0.1 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 5 10 Forward Transfer Admittance yfs (S) VGS = 10 V –25°C VDS = 20 V Pulse Test TC = 25°C 5 Pulse Test 4 75°C 2 RDS (on) (Ω) 3 ID = 5 A 1.0 2 0.5 2A 1A 1 0.2 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1155, 2SK1156 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5,000 10,000 di/dt = 100 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) VGS = 0 Ciss VGS = 0 2,000 Pulse Test f = 1 MHz Capacitance C (pF) 1,000 1,000 Coss 500 200 100 Crss 100 50 10 0.1 0.2 0.5 1.0 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VDD = 100 V VGS = 10 V Drain to Source Voltage VDS (V) PW = 2 µs, duty < 1% Gate to Source Voltage VGS (V) 250 V 400 VDS 16 200 Switching Time t (ns) 400 V 100 300 12 td (off) VGS 50 200 8 tf ID = 5 A 20 tr VDD = 400 V 100 4 td (on) 250 V 10 100 V 0 5 0 8 16 24 32 40 0.1 0.2 0.5 1.0 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1155, 2SK1156 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current IDR (A) 8 6 4 2 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 2.5°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW lse T Pu PW hot T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1155, 2SK1156 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1157, 2SK1158 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1157 VDSS 450 V ————— ——— 2SK1158 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1157, 2SK1158 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1157 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1158 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1157 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1158 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1157 RDS(on) — 0.6 0.8 Ω ID = 4 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1158 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 280 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 95 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 320 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1157, 2SK1158 Power vs. Temperature Derating Maximum Safe Operation Area 60 50 20 10 Channel Dissipation Pch (W) 10 µs ea Ar 0 10 µs n) R is (o PW Drain Current ID (A) by th DS 1 d in ite ion 40 5 D = m C Lim at 10 s is per O O pe m 2 ra s tio (1 n sh 1.0 (T ot C ) 20 0.5 = 25 °C 0.2 ) 0.1 Ta = 25°C 2SK1157 2SK1158 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 7V –25°C 6V VDS = 20 V TC = 25°C 16 16 Pulse Test Drain Current ID (A) Pulse Test Drain Current ID (A) 12 12 75°C 5V 8 8 4 4 VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1157, 2SK1158 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance 10 5 Pulse Test Pulse Test 8 2 VGS = 10 V 10 A 1.0 RDS (on) (Ω) 6 0.5 15 V 4 5A 0.2 2 ID = 2 A 0.1 0.05 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 2.0 50 Forward Transfer Admittance yfs (S) VGS = 10 V VDS = 20 V Pulse Test Pulse Test 1.6 20 –25°C TC = 25°C ID = 10 A 10 RDS (on) (Ω) 1.2 75°C 5 0.8 2, 5 A 2 0.4 1.0 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1.0 2 5 10 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1157, 2SK1158 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5,000 5,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) VGS = 0 f = 1 MHz 2,000 Pulse Test Ciss 1,000 Capacitance C (pF) 1,000 500 Coss 100 200 100 Crss 10 50 5 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) PW = 2 µs, duty < 1% 400 VDD = 100 V 16 200 Switching Time t (ns) VDS 250 V td (off) 400 V 100 300 12 VGS 50 tf 200 8 20 tr ID = 7 A td (on) 100 VDD = 400 V 4 250 V 10 100 V 0 5 0 8 16 24 32 40 0.2 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1157, 2SK1158 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 2.08°C/W, TC = 25°C 0.02 PDM 0.03 D = PW 0.01 ulse PW T P ot 1 Sh T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1157, 2SK1158 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1159 VDSS 450 V ————— ——— 2SK1160 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1159, 2SK1160 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1159 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1160 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1159 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1160 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1159 RDS(on) — 0.55 0.7 Ω ID = 4 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1160 — 0.60 0.8 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1150 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 340 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 17 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 100 — ns ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode forward trr — 350 — ns IF = 8 A, VGS = 0, voltage diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1159, 2SK1160 Power vs. Temperature Derating Maximum Safe Operation Area 60 50 10 20 µs Channel Dissipation Pch (W) a 10 re R is A 0 µs )n 10 (o PW by th DS Drain Current ID (A) d in DC = 1 ite ion m O 10 Lim at 40 5 s is per pe m O ra s ( 2 tio 1 s n (T hot) 1.0 C = 25 20 0.5 °C ) 0.2 Ta = 25°C 2SK1160 0.1 2SK1159 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V Pulse Test –25°C Ta = 25°C 6V 16 VDS = 20 V 5.5 V 16 75°C Pulse Test Drain Current ID (A) Drain Current ID (A) 12 12 5.0 V 8 8 4.5 V 4 4 VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1159, 2SK1160 Drain to Source Saturation Voltage Static Drain to Source on State Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 10 10 Pulse Test 5 Pulse Test 8 VGS = 10 V 10 A 2 RDS (on) (Ω) 6 1.0 4 15 V 0.5 5A 2 ID = 2 A 0.2 0.1 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 2.0 50 Forward Transfer Admittance yfs (S) VGS = 10 V VDS = 20 V Pulse Test Pulse Test 1.6 20 –25°C TC = 25°C ID = 10 A 10 75°C RDS (on) (Ω) 1.2 5 0.8 2, 5 A 2 0.4 1.0 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1.0 2 5 10 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1159, 2SK1160 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5,000 10,000 VGS = 0 di/dt = 100 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) f = 1 MHz VGS = 0 2,000 Pulse Test Capacitance C (pF) Ciss 1,000 1,000 500 Coss 200 100 100 Crss 50 10 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VDD = 100 V VGS = 10 V, Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 250 V PW = 2 µs, duty < 1% 400 400 V VGS 16 200 Switching Time t (ns) VDS td (off) 100 300 12 50 tf 200 8 tr 20 td (on) VDD = 400 V 100 ID = 8 A 4 250 V 10 100 V 0 5 0 20 40 60 80 100 0.2 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1159, 2SK1160 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 2.08°C/W, TC = 25°C 0.05 PDM 0.02 0.01 PW 0.03 D= u lse T PW h ot P T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1159, 2SK1160 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1161, 2SK1162 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance • High speed switching 2 • Low drive current 1 • No secondary breakdown 2 • Suitable for switching regulator and DC-DC 3 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1161 VDSS 450 V ————— ——— 2SK1162 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 30 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1161, 2SK1162 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1161 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1162 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1161 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1162 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1161 RDS(on) — 0.6 0.8 Ω ID = 5 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1162 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 280 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 60 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 90 — ns ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 350 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1157, 2SK1158. 2

2SK1161, 2SK1162 Power vs. Temperature Derating Maximum Safe Operation Area 120 100 Channel Dissipation Pch (W) 30 10 10 µs Drain Current ID (A) 0 a µs re PW R is A 10 ) 80 1 on by th ( D = m DS d in C 10 s ite ion O m Lim at pe is per ra s (1 O 3 tio n sh (T ot 40 ) 1.0 C = 25 °C ) 0.3 Ta = 25°C 2SK1162 2SK1161 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW lse PW T ho t Pu T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1163, 2SK1164 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance • High speed switching 2 • Low drive current 1 • No secondary breakdown 2 3 • Suitable for switching regulator and DC-DC 1 converter 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1163 VDSS 450 V ————— ——— 2SK1164 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 11 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 11 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1163, 2SK1164 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1163 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1164 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1163 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1164 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1163 RDS(on) — 0.55 0.7 Ω ID = 5 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1164 — 0.60 0.8 ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 8.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1150 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 340 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 17 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 60 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 95 — ns ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 11 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 400 — ns IF = 11 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2

2SK1163, 2SK1164 Power vs. Temperature Derating Maximum Safe Operation Area 50 120 10 10 µs 20 0 Channel Dissipation Pch (W) µs a re R is A 10 PW 1 ) on by th ( m Drain Current ID (A) DS d in D = s ite ion 5 C 10 Lim at 80 O is per pe m s O ra (1 2 tio sh n ot 1.0 (T ) C = 25 40 0.5 °C ) 0.2 Ta = 25°C 2SK1164 0.1 2SK1163 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 0.05 θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW se T ul PW h ot P T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1165, 2SK1166 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance • High speed switching 2 • Low drive current 1 • No secondary breakdown 2 • Suitable for switching regulator and DC-DC 3 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1165 VDSS 450 V ————— ——— 2SK1166 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1165, 2SK1166 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1165 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1166 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1165 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1166 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1165 RDS(on) — 0.40 0.55 Ω ID = 6 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1166 — 0.45 0.60 ——————————————————————————————————————————— Forward transfer admittance |yfs| 6.0 10 — S ID = 6 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 410 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ID = 6 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 5 Ω ———————————————————————————————— Turn-off delay time td(off) — 120 — ns ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 450 — ns IF = 12 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1165, 2SK1166 Power vs. Temperature Derating Maximum Safe Operation Area 120 100 10 µs Channel Dissipation Pch (W) 30 10 0 a µs re PW Drain Current ID (A) R is A 1 n ) D (o by th m DS 10 C = d in 80 s ite ion O 10 Lim at pe m is per ra s O tio (1 3 n sh (T ot C = ) 40 1.0 25 °C ) 0.3 Ta = 25°C 2SK1166 2SK1165 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 8V 6V 5.5 V VDS = 20 V 16 16 Pulse Test Drain Current ID (A) Drain Current ID (A) 12 5.0 V 12 8 8 4.5 V 75°C –25°C 4 4 TC = 25°C VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1165, 2SK1166 Drain to Source Saturation Voltage Static Drain to Source on State Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 10 5 Pulse Test Pulse Test VGS = 10 V 8 15 A 2 1.0 RDS (on) (Ω) 6 10 A 0.5 15 V 4 ID = 5 A 0.2 2 0.1 0.05 0 4 8 12 16 20 0.5 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 50 Forward Transfer Admittance yfs (S) VGS = 10 V 15 A VDS = 20 V Pulse Test 10 A –25°C Pulse Test 0.8 20 TC = 25°C ID = 5 A 75°C 10 RDS (on) (Ω) 0.6 5 0.4 2 0.2 1.0 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1165, 2SK1166 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5,000 10,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) VGS = 0 V f = 1 MHz 2,000 Pulse Test Ciss Capacitance C (pF) 1,000 1,000 500 Coss 200 100 100 Crss 50 10 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VDD = 100 V VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 250 V PW = 2 µs, duty < 1% 400 400 V 16 200 td (off) Switching Time t (ns) VDS VGS 100 tr 300 12 tf 50 200 8 ID = 12 A td (on) 20 100 VDD = 400 V 4 250 V 10 100 V 0 5 0 20 40 60 80 100 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1165, 2SK1166 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 0.05 θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW ul se PW T hot P T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1165, 2SK1166 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1167, 2SK1168 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance • High speed switching 2 • Low drive current 1 • No secondary breakdown 2 • Suitable for switching regulator and DC-DC 3 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1167 VDSS 450 V ————— ——— 2SK1168 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1167, 2SK1168 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1167 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1168 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1167 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1168 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1167 RDS(on) — 0.25 0.36 Ω ID = 8 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1168 — 0.30 0.40 ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 13 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2050 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 600 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 75 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 30 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 110 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 150 — ns ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 500 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1167, 2SK1168 Power vs. Temperature Derating Maximum Safe Operation Area 150 100 10 µs Channel Dissipation Pch (W) 30 10 0 PW µs Drain Current ID (A) D 1 100 C = m 10 O 10 s pe m ra s tio (1 3 n Sh (T ot C= ) 25 50 1.0 Operation in this area °C ) is limited by RDS (on) 0.3 2SK1168 Ta= 25°C 2SK1167 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V VDS = 20 V 5.5 V Pulse Test 16 6V 16 Pulse Test Drain Current ID (A) Drain Current ID (A) 12 5.0 V 12 8 8 4.5 V 75°C –25°C 4 4 VGS = 4V TC = 25°C 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1167, 2SK1168 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 10 5 Pulse Test Drain to Source Saturation Voltage Pulse Test 8 2 20 A 1.0 RDS(on) (Ω) VDS (on) (V) 6 VGS = 10 V 0.5 4 10 A 0.2 15 V 2 ID = 5 A 0.1 0.05 0 4 8 12 16 20 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 50 Forward Transfer Admittance yfs (S) 1.0 Static Drain to Source on State Resistance VDS = 20 V –25°C VGS = 10 V 20 Pulse Test TC = 25°C 0.8 Pulse Test 75°C 10 ID = 20 A RDS (on) (Ω) 0.6 5 10 A 0.4 5A 2 0.2 1.0 0.5 0 0.2 0.5 1.0 2 5 10 20 –40 0 40 80 120 160 Drain Current ID (A) Case Temperature TC (°C) 4

2SK1167, 2SK1168 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 5,000 10,000 VGS = 0 di/dt = 100 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) f = 1 MHz VGS = 0 2,000 Ciss Pulse Test Capacitance C (pF) 1,000 1,000 500 Coss 200 100 100 Crss 50 10 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 1,000 Drain to Source Voltage VDS (V) VDD = 100 V VGS = 10 V, VDD 30 V Gate to Source Voltage VGS (V) 500 PW = 2 µs, duty < 1% 400 250 V 16 Switching Time t (ns) VDS t d (off) 400 V 200 300 12 VGS tr 100 tf 200 8 50 ID = 15 A t d (on) 100 VDD = 400 V 4 250 V 20 100 V 0 10 0 20 40 60 80 100 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1167, 2SK1168 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 4 5 V, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS(t) · θch–c 0.1 0.05 θch–c = 1.25°C/W,TC = 25°C PDM 0.02 1 0.03 0.0 t Puls e D = PW T 1S ho PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1167, 2SK1168 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance • High speed switching 2 • Low drive current 1 • No secondary breakdown 2 • Suitable for switching regulator and DC-DC 3 1 1. Gate converter 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1169 VDSS 450 V ————— ——— 2SK1170 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 120 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1169, 2SK1170 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1169 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1170 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1169 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1170 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1169 RDS(on) — 0.20 0.25 Ω ID = 10 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1170 — 0.22 0.27 ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2800 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 780 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 90 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 32 — ns ID = 10 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 115 — ns RL = 3 Ω ———————————————————————————————— Turn-off delay time td(off) — 200 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 500 — ns IF = 20 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1169, 2SK1170 Power vs. Temperature Derating Maximum Safe Operation Area 100 150 10 Channel Dissipation Pch (W) 30 10 µs 0 µs Drain Current ID (A) PW 1 10 D m 100 C = s O 10 pe m ra s 3 tio (1 n Sh (T ot 1.0 C = ) 50 Operation in this area 25 °C is limited by RDS (on) ) 0.3 Ta = 25°C 2SK1170 2SK1169 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 20 10 V 7V VDS = 20 V 6V Pulse Test 40 16 Drain Current ID (A) Drain Current ID (A) Pulse Test 30 12 20 5V 8 75°C –25°C 10 4 TC = 25°C VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1169, 2SK1170 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 10 Static Drain to Source on State Resistance 5 Drain to Source Saturation Voltage Pulse Test Pulse Test 8 2 1.0 RDS (on) (Ω) VDS (on) (V) 6 20 A 0.5 VGS = 10 V 4 0.2 15 V 10 A 2 ID = 5 A 0.1 0.05 0 4 8 12 16 20 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 50 Forward Transfer Admittance yfs (S) VGS = 10 V VDS = 20 V –25°C 0.8 Pulse Test 20 Pulse Test TC = 25°C 75°C 10 RDS (on) (Ω) 0.6 ID = 20 A 5 0.4 10 A 2 5A 0.2 1.0 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1169, 2SK1170 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 5,000 10,000 VGS = 0 di/dt = 100 A/µs, Ta = 25°C f = 1 MHz Reverse Recovery Time trr (ns) VGS = 0 Ciss 2,000 Pulse Test Capacitance C (pF) 1,000 1,000 Coss 500 200 100 100 Crss 50 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VDD = 100 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) 400 250 V 16 200 Switching Time t (ns) 400 V 100 tf 300 12 VDS VGS 50 tr td (on) 200 8 20 ID = 20 A VGS = 10 V V DD = 400 V 4 100 250 V PW = 2 µs, duty < 1% 10 100 V 0 5 0 40 80 120 160 200 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1169, 2SK1170 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V 4 VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 1.04°C/W,TC = 25°C PDM 0.02 0.03 0.01 Pulse D = PW T ot PW 1Sh T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1169, 2SK1170 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 • Low on-resistance 3 • High speed switching • 4 V gate drive device 2, 4 – Can be driven from 5 V source 12 3 • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 120 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1254 L , 2SK1254 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 120 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage IDSS — — 100 µA VDS = 100 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.30 0.40 Ω ID = 2 A, VGS = 10 V * resistance —————————— ——————————– — 0.35 0.55 ID = 2 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 420 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 190 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 25 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 2 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 20 — ns RL = 15 Ω ———————————————————————————————— Turn-off delay time td(off) — 150 — ns ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 160 — ns IF = 3 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1254 L , 2SK1254 S Power vs. Temperature Derating Maximum Safe Operation Area 30 50 20 Channel Dissipation Pch (W) 10 10 Drain Current ID (A) µs 10 20 5 PW 0 µs = 2 10 1 DC m m s O 1.0 s pe (1 ra Sh tio 10 0.5 ot n( ) TC Operation in this = 0.2 area is limited 25 by RDS (on) °C ) 0.1 Ta = 25°C 0.05 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V Pulse Test 4V VDS = 10 V 4 4 Pulse Test Drain Current ID (A) Drain Current ID (A) 3V 3 3 2 2 2.5 V 1 1 75°C TC = 25°C –25°C VGS = 2 V 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1254 L , 2SK1254 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 5 Drain to Source Saturation Voltage PulseTest Pulse Test 1.6 2 VGS = 4 V 1.0 RDS (on) (Ω) VDS (on) (V) 1.2 3A 0.5 0.8 10 V 2A 0.2 0.4 ID = 1 A 0.1 0.05 0 2 4 6 8 10 0.2 0.5 1.0 2.0 5.0 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 1.0 10 Forward Transfer Admittance yfs (S) –25°C VDS = 10 V Pulse Test 5 Pulse Test TC = 25°C 0.8 75°C ID = 3 A 2 RDS (on) (Ω) 0.6 1.2 A VGS = 4 V 1.0 0.4 3A 0.5 1.2 A VGS = 10 V 0.2 0.2 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1254 L , 2SK1254 S Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 500 1,000 di/dt = 50 A/µs, Ta = 25°C Ciss Reverse Recovery Time trr (ns) VGS = 0 200 Pulse Test Capacitance C (pF) Coss 100 100 50 Crss 20 10 VGS = 0 10 f = 1 MHz 5 1 0.1 0.2 0.5 1.0 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 VDD = 25 V VGS = 10 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 50 V PW = 2µs, duty < 1 % t d (off) 80 VDS 80 V 16 200 Switching Time t (ns) 100 60 VGS 12 50 tf 40 8 20 ID = 3 A tr 20 VDD = 80 V 4 50 V 10 25 V t d (on) 0 5 0 8 16 24 32 40 1.0 0.2 0.5 1.0 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1254 L , 2SK1254 S Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 3 10 V 15 V 2 1 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 6.25°C/W, TC = 25°C 0.02 PDM 0.01 ulse D = PW 0.03 h ot P T 1S PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1254 L , 2SK1254 S Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1296 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 120 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 30 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1296 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.024 0.028 Ω ID = 15 A, VGS = 10 V * resistance ——————————— ——————————– — 0.030 0.040 ID = 15 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 27 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2250 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 1230 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ID = 15 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 125 — ns RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 390 — ns ———————————————————————————————— Fall time tf — 225 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 30 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 160 — ns IF = 30 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1296 Power vs. Temperature Derating Maximum Safe Operation Area 150 500 200 Channel Dissipation Pch (W) 10 100 µs Drain Current ID (A) 10 0 100 50 PW µs 1 = m 10 s 20 D C m O s pe (1 10 ra Sh tio ot 50 5 n ) Operation in this area (T C is limited by RDS (on) = 2 25 Ta = 25°C °C 1.0 ) 0.5 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 15 V 4V 5V VDS = 10 V 3.5 V Pulse Test 40 10 V 40 Pulse Test Drain Current ID (A) Drain Current ID (A) 30 30 3V 20 20 75°C 10 VGS = 2.5 V 10 TC = 25°C –25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1296 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 0.5 Drain to Source Saturation Voltage Pulse Test Pulse Test 1.6 0.2 ID = 50 A 0.1 RDS (on) (Ω) VDS (on) (V) 1.2 VGS = 4 V 0.05 0.8 20 A 0.02 10 V 0.4 10 A 0.01 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.05 50 Forward Transfer Admittance yfs (S) ID = 20 A –25°C 5 A,10 A TC = 25°C 0.04 20 75°C VGS = 4 V 10 RDS (on) (Ω) 0.03 20 A 5 A,10 A 5 VGS = 10 V 0.02 2 VDS = 10 V 0.01 Pulse Test Pulse Test 1.0 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1296 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Reverse Recovery Time trr (ns) VGS = 0 f = 1 MHz 500 Pulse Test Ciss Capacitance C (pF) 1000 Coss 200 100 Crss 50 100 20 10 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V 80 25 V 16 200 tf Switching Time t (ns) 50 V 100 60 12 tr VGS VDS 50 40 8 td (on) 20 20 VDD = 50 V 4 VGS = 10 V ID = 30 A 10 25 V PW = 2 µs, duty < 1 % 10 V 0 5 0 40 80 120 160 200 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1296 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 10 V 30 5V 20 10 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 θch–c = 1.67°C/W, TC = 25°C 0.05 PDM 0.02 e D =PW 0.03 uls 0.01 hot P PW T 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1296 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1297 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance 2 • High speed switching • Low drive current 1 • 4 V gate drive device 2 3 – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1297 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.015 0.018 Ω ID = 20 A, VGS = 10 V * resistance ——————————— ——————————– — 0.02 0.025 ID = 20 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 1850 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 450 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 30 — ns ID = 20 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 170 — ns RL = 1.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 700 — ns ———————————————————————————————— Fall time tf — 350 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode trr — 155 — ns IF = 40 A, VGS = 0, reverse recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1297 Power vs. Temperature Derating Maximum Safe Operation Area 120 500 200 Channel Dissipation Pch (W) 10 µs 10 100 Drain Current ID (A) 0 µs 1 PW 80 50 m = s 10 D C m 20 s( O pe 1 Sh 10 ra ot tio ) 40 n 5 Operation in this area (T C is limited by RDS (on) = 25 2 °C Ta = 25°C ) 1.0 0.5 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 10 V 4.5 V Pulse Test 8V 5V 4V VDS = 10 V 80 80 Pulse Test Drain Current ID (A) Drain Current ID (A) 60 60 3.5 V 40 40 3V 75°C TC = 25°C 20 20 –25°C VGS = 2.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1297 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 0.5 Drain to Source Saturation Voltage Pulse Test Pulse Test 1.6 0.2 0.1 RDS (on) (Ω) VDS (on) (V) 1.2 ID = 50 A 0.05 0.8 VGS = 4 V 0.02 10 V 0.4 20 A 0.01 10 A 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.05 50 Forward Transfer Admittance yfs (S) Pulse Test 0.04 20 –25°C ID = 50 A TC = 25°C 10 A, 20 A 10 75°C RDS (on) (Ω) 0.03 VGS = 4 V 5 0.02 50 A 2 10 A, 20 A VDS = 10 V 0.01 VGS = 10 V Pulse Test 1.0 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1297 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) Ciss 200 Capacitance C (pF) Coss 1000 100 Crss 50 20 100 di/dt = 50 A/µs, Ta = 25°C VGS = 0 10 Pulse Test 5 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 80 16 500 tf Switching Time t (ns) VDD = 10 V 25 V 50 V 200 60 12 VDS tr 100 VGS 40 50 V 8 50 td (on) 20 4 ID = 40 A VGS = 10 V 25 V 20 PW = 2µs, duty < 1 % VDD = 10 V 0 10 0 40 80 120 160 200 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1297 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 10 V 5V 40 20 VGS = 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) • θch–c 0.1 θch–c = 1.25°C/W, TC = 25°C 0.05 PDM 0.02 0.03 0.01 Pulse D =PW hot PW T 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1297 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1298 Silicon N-Channel MOS FET Application TO–3PFM High speed power switching Features • Low on-resistance 2 • High speed switching • Low drive current • 4 V gate drive device 1 2 – Can be driven from 5 V source 1 3 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1298 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage IDSS — — 250 µA VDS = 50 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.015 0.018 Ω ID = 20 A, VGS = 10 V * resistance ——————————— ——————————– — 0.02 0.025 ID = 20 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 1850 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 450 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 30 — ns ID = 20 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 170 — ns RL = 1.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 700 — ns ———————————————————————————————— Fall time tf — 350 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 155 — ns IF = 40 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1297. 2

2SK1298 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 200 10 Channel Dissipation Pch (W) µs 10 100 Drain Current ID (A) 0 1 µs m PW 40 50 s = 10 D C m 20 O s( pe 1 10 ra Sh tio ot ) 20 5 n (T C Operation in this area = 2 25 is limited by RDS (on) °C 1.0 ) Ta = 25°C 0.5 0 50 100 150 0.1 0.3 1.0 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 θch–c = 2.50°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D =PW 0.01 lse PW T Pu hot T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1299 L , 2SK1299 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 • Low on-resistance 3 • High speed switching • Low drive current 2, 4 • 4 V gate drive device 12 3 – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, 1 1. Gate power switch and solenoid drive 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1299 L , 2SK1299 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage IDSS — — 100 µA VDS = 80 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.25 0.35 Ω ID = 2 A, VGS = 10 V * resistance —————————— ——————————– — 0.30 0.45 ID = 2 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 165 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 2 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 35 — ns RL = 15 Ω ———————————————————————————————— Turn-off delay time td(off) — 160 — ns ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 3 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1299 L , 2SK1299 S Power vs. Temperature Derating Maximum Safe Operation Area 30 50 Operation in this area 20 is limited by RDS (on) 10 Channel Dissipation Pch (W) µs 10 Drain Current ID (A) 10 20 5 PW 0 µs = 1 10 m 2 s m s D TC 1 (1 C = ( Sh O 25 pe ° 10 0.5 ot ra C) ) tio n 0.2 0.1 Ta = 25°C 0.05 0 50 100 150 1 2 5 10 20 50 100 200 500 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 5 10 V 4.5 V 5V VDS = 10 V 4V Pulse Test 8 4 Drain Current ID (A) Drain Current ID (A) 3.5 V 6 3 4 3V 2 2 VGS = 2.5 V 1 TC = –25°C 25°C 75°C Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1299 L , 2SK1299 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 5 Drain to Source Saturation Voltage Pulse Test Pulse Test 1.6 2 ID = 5 A 1 RDS (on) (Ω) VDS (on) (V) 1.2 0.5 VGS = 4 V 0.8 10 V 2A 0.2 0.4 1A 0.1 0.05 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 10 Forward Transfer Admittance yfs (S) ID = 5 A VDS = 10 V TC = –25°C 2A 5 Pulse Test 0.4 1A 5A VGS = 4 V 25°C 2 RDS (on) (Ω) 0.3 2A 75°C 1A 1 10 V 0.2 0.5 0.1 0.2 Pulse Test 0 0.1 –40 0 40 80 120 160 0.05 1.0 0.2 0.5 1 2 5 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1299 L , 2SK1299 S Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Ciss Reverse Recovery Time trr (ns) 200 Capacitance C (pF) Coss 100 100 50 Crss 10 20 di/dt = 50 A/µs 10 VGS = 0, Ta = 25°C VGS = 0 Pulse Test f = 1 MHz 5 1 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 200 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 80 V 160 50 V 16 200 td (off) Switching Time t (ns) 25 V 100 120 VGS 12 tf 50 80 VDS 8 tr 20 40 ID = 3 A 4 . VDD = 25 V 10 VGS = 10 V, VDD = 30 V . 50 V td (on) PW = 2µs, duty < 0.1 % 80 V 0 5 0 8 12 16 20 24 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1299 L , 2SK1299 S Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current IDR (A) 8 6 5V 4 VGS = 10 V VGS = 0, – 5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 0.05 θch–c = 6.25°C/W, TC = 25°C 0.02 PDM .01 Pulse 0.03 0 hot D =PW 1S PW T T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1299 L , 2SK1299 S Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1300 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2, 4 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 40 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1300 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.20 0.25 Ω ID = 5 A, VGS = 10 V * resistance ——————————— ——————————– — 0.25 0.35 ID = 5 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 525 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 205 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 50 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 170 — ns ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 220 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1300 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 Ta = 25°C Channel Dissipation Pch (W) 30 10 µs Drain Current ID (A) 10 0 40 10 PW 1 µs m D = s C 10 O pe 3 m s ra (1 tio Sh n (T C 20 1 ot ) = 25 °C 0.3 ) Operation in this area is limited by RDS (on) 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 10 V Pulse Test VDS = 10 V 6V Pulse Test 16 4V 8 Drain Current ID (A) Drain Current ID (A) 12 6 3.5 V 8 4 3V 4 VGS = 2.5 V 2 TC = 75°C 25°C –25°C 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1300 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.5 5 Pulse Test Drain to Source Saturation Voltage Pulse Test 10 A 2 2.0 1 RDS (on) (Ω) VDS (on) (V) 1.5 0.5 5A 1.0 VGS = 4 V 10 V 0.2 ID = 2 A 0.5 0.1 0.05 0 2 4 6 8 10 0.5 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance yfs (S) Pulse Test ID = 10 A 5A VDS = 10 V 0.4 2A 20 Pulse Test 10 A 5A TC = –25°C 10 RDS (on) (Ω) 0.3 VGS = 4 V 2A 5 0.2 25°C 75°C 10 V 2 0.1 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1300 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 100 Ciss 50 Coss di/dt = 50 A/µs 10 20 VGS = 0, Ta = 25°C Pulse Test 10 Crss VGS = 0 f = 1 MHz 5 1 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 200 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) 160 16 200 VDD = 25 V Switching Time t (ns) VGS 50 V 80 V 100 120 12 tf 50 80 VDS 8 tr 20 VGS = 10 V, PW = 2 µs 40 ID = 10 A 4 . VDD = 80 V 10 duty < 1 % VDD = 30 V . 50 V 25 V td (on) 0 5 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1300 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current IDR (A) 16 12 8 5V VGS = 10 V 4 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C Normalized Transient Thermal D=1 1.0 0.5 Impedance γs (t) 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 0.05 θch–c = 3.13°C/W, TC = 25°C PDM 0.02 01 Pulse 0.03 0. t D =PW ho PW T 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1300 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1301 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • Low drive current 3 • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1301 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.10 0.13 Ω ID = 8 A, VGS = 10 V * resistance ——————————— ——————————– — 0.13 0.18 ID = 8 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 11 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 340 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 100 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 250 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1301 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 Channel Dissipation Pch (W) 30 µs 10 Drain Current ID (A) 0 µs 1 40 10 m PW Ope D s C = ratio 10 n m (T C 3 s (1 = Sh 25 20 1 ot °C) ) 0.3 Operation in this area is limited by RDS (on) Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 4V Pulse Test VDS = 10 V 7V Pulse Test 16 3.5 V 16 Drain Current ID (A) Drain Current ID (A) 12 12 3V 8 8 75°C TC = 25°C 4 2.5 V 4 –25°C VGS = 2 V 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1301 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.5 0.5 Drain to Source Saturation Voltage 20 A VGS = 4 V 2.0 0.2 10 V Pulse Test 0.1 RDS (on) (Ω) VDS (on) (V) 1.5 0.05 10 A 1.0 ID = 5 A 0.02 Pulse Test 0.5 0.01 0.005 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.5 50 Forward Transfer Admittance yfs (S) ID = 20 A VDS = 10 V Pulse Test Pulse Test –25°C 0.4 20 TC = 25°C 75°C 10 RDS (on) (Ω) 0.3 VGS = 4 V 10 A 5 5A 0.2 20 A 10 A 5A 2 0.1 1 VGS = 10 V 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1301 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 di/dt = 50 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) VGS = 0 VGS = 0 f = 1 MHz 200 Pulse Test Capacitance C (pF) 100 1000 Ciss 50 Coss 100 Crss 20 10 5 10 0.2 0.5 1.0 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 25 V td (off) 80 50 V 16 200 VDS 80 V Switching Time t (ns) VGS VDD = 80 V 100 60 12 tf 50 V 50 40 8 tr 20 20 4 td (on) 25 V ID = 15 A 10 VGS = 10 V PW = 2µs, duty < 1 % 0 0 5 20 40 60 80 100 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1301 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 10 V 8 5V 4 VGS = 0, –5 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 0.05 θch–c = 2.5°C/W, TC = 25°C 0.02 PDM e D =PW 0.03 1 uls T 0.0 hot P PW T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1301 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1302 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • Low on-resistance 2 • High speed switching 1 2 • 4 V gate drive device 3 – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, 1 1. Gate power switch and solenoid drive 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage V(BR)DSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1302 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.065 0.085 Ω ID = 10 A, VGS = 10 V * resistance ——————————— ——————————– — 0.085 0.12 ID = 10 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1300 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 540 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 160 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ID = 10 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 100 — ns RL = 3 Ω ———————————————————————————————— Turn-off delay time td(off) — 300 — ns ———————————————————————————————— Fall time tf — 150 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 20 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1302 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 Ta = 25°C 10 Channel Dissipation Pch (W) 10 µs 30 0 1 µs Drain Current ID (A) m PW Ope s D 40 10 C = 10 tion m ra s 3 (1 Sh 25° (T C ot 20 = ) 1 C ) 0.3 Operation in this area is limited by RDS (on) 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 20 10 V 7V Pulse Test VDS = 10 V 5V 4V Pulse Test 40 16 Drain Current ID (A) Drain Current ID (A) 30 12 3.5 V 20 8 3V 75°C 10 4 TC = 25°C VGS = 2.5 V –25°C 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1302 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 0.5 Drain to Source Saturation Voltage Pulse Test Pulse Test 1.6 0.2 ID = 20 A VGS = 4 V 0.1 RDS (on) (Ω) VDS (on) (V) 1.2 10 V 0.05 0.8 10 A 0.02 0.4 5A 0.01 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.20 50 Forward Transfer Admittance yfs (S) Pulse Test –25°C 0.16 ID = 20 A 20 TC = 25°C 10 A 75°C 10 RDS (on) (Ω) 0.12 5A VGS = 4 V 5 0.08 20 A 5 A, 10 A VGS = 10 V 2 VDS = 10 V 0.04 Pulse Test 1 0 0.5 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1302 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz Capacitance C (pF) Ciss 200 1000 Coss 100 50 Crss 100 di/dt = 50 A/µs, Ta = 25°C 20 VGS = 0 Pulse Test 10 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDS td (off) 80 VDD = 25 V 16 500 50 V Switching Time t (ns) 80 V 200 60 12 tf 100 VGS 40 8 tr 50 VDD = 80 V VGS = 10 V 20 50 V 4 PW = 2µs, duty < 1 % ID = 20 A 20 25 V td (on) 0 0 10 20 40 60 80 100 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1302 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 10 V 5V 8 4 VGS = 0, –5 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γs (t) · θch–c 0.1 0.05 θch–c = 2.50°C/W, TC = 25°C PDM 0.02 1 lse D =PW 0.03 0.0 t Pu ho PW T 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1302 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1303 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance 2 • High speed switching • Low drive current 1 • 4 V gate drive device 2 3 – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 120 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 30 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1303 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.06 Ω ID = 15 A, VGS = 10 V * resistance ——————————— ——————————– — 0.06 0.09 ID = 15 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 13 22 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1750 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 710 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 15 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 120 — ns RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 390 — ns ———————————————————————————————— Fall time tf — 195 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 30 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 360 — ns IF = 30 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1303 Power vs. Temperature Derating Maximum Safe Operation Area 120 500 200 Channel Dissipation Pch (W) 100 10 Drain Current ID (A) 10 µs 80 50 0 µs D P C W= 1 20 m O pe 10 s 10 ra m tio s 40 5 n (1 (T S C = ho 2 25 t) ° Operation in this Area C) Ta = 25°C 1.0 is Limited by RDS (on) 0.5 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 10 V 5V 4V VDS = 10 V 7V Pulse Test Pulse Test 40 40 Drain Current ID (A) Drain Current ID (A) 3.5 V 30 30 20 3V 20 75°C TC = 25°C 10 VGS = 2.5 V 10 –25°C 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1303 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance 5 0.5 Pulse Test Pulse Test 4 0.2 VGS = 4 V 10 V 0.1 RDS (on) (Ω) 3 ID = 50 A 0.05 2 0.02 20 A 1 10 A 0.01 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.20 50 Forward Transfer Admittance yfs (S) Pulse Test 0.16 20 –25°C ID = 20 A 10 RDS (on) (Ω) 0.12 TC = 25°C 10 A 75°C 5 50 A 0.08 VGS = 4 V 20 A 2 10 A VGS = 10 V 0.04 VGS = 10 V Pulse Test 1.0 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1303 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5,000 10,000 VGS = 0 di/dt = 50 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) f = 1 MHz VGS = 0 2,000 Pulse Test Ciss Capacitance C (pF) 1,000 1,000 Coss 500 Crss 200 100 100 50 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1,000 Drain to Source Voltage VDS (V) td (off) Gate to Source Voltage VGS (V) VDD = 25 V 500 80 VDS 16 Switching Time t (ns) 50 V 80 V 200 60 12 tf 100 VDD = 80 V VGS 40 8 50 tr . VGS = 10 V, VDD = 30 V . 20 4 PW = 2 µs, duty < 1% 50 V ID = 30 A 20 td (on) 25 V 0 10 0 20 40 60 80 100 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1303 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 10 V 10 5V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW se T Pul PW S hot T 1 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1303 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1304 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • Low on-resistance 2 • High speed switching • Low drive current 1 2 • 4 V gate drive device 3 – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1304 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.025 0.03 Ω ID = 20 A, VGS = 10 V * resistance ——————————— ——————————– — 0.03 0.04 ID = 20 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3500 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 1400 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 340 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 25 — ns ID = 20 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 170 — ns RL = 1.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 730 — ns ———————————————————————————————— Fall time tf — 300 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 40 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1304 Power vs. Temperature Derating Maximum Safe Operation Area 120 500 Operation in this Area is Limited by RDS (on) 200 Channel Dissipation Pch (W) 100 10 µs Drain Current ID (A) 10 0 80 50 PW µs D 1 C = m 20 O 10 s pe m 10 ra s tio (1 n Sh 40 5 (T C ot = ) 25 2 °C Ta = 25°C ) 1.0 0.5 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 50 10 V 5V Pulse Test VDS = 10 V 7V Pulse Test 80 4V 40 Drain Current ID (A) Drain Current ID (A) 60 30 3.5 V 40 20 3V 75°C TC = 25°C 20 10 VGS = 2.5 V –25°C 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1304 Drain to Source Saturation Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) vs. Gate to Source Voltage Static Drain to Source on State Resistance 2.0 0.5 Pulse Test Pulse Test 1.6 0.2 50 A 0.1 RDS (on) (Ω) 1.2 VGS = 4 V 0.05 0.8 10 V 20 A 0.02 0.4 ID = 10 A 0.01 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Static Drain to Source on State Resistance 0.10 50 Forward Transfer Admittance yfs (S) Pulse Test 0.08 20 ID = 50 A –25°C 20 A 10 TC = 25°C RDS (on) (Ω) 0.06 75°C 10 A 5 VGS = 4 V 50 A 0.04 20 A 2 10 A VGS = 10 V 0.02 VGS = 10 V Pulse Test 1.0 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Drain Current ID (A) 4

2SK1304 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10,000 di/dt = 50 A/µs, Ta = 25°C Reverse Recovery Time trr (ns) VGS = 0 Ciss 200 Pulse Test Capacitance C (pF) 100 1,000 Coss 50 Crss 20 100 10 VGS = 0 f = 1 MHz 5 10 0.5 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1,000 td (off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 25 V 500 80 VDS 16 Switching Time t (ns) 50 V tf 80 V 200 60 12 100 VDD = 80 V tr 40 VGS 8 50 V 50 25 V td (on) 20 4 ID = 40 A 20 VGS = 10 V PW = 2 µs, duty < 1% 0 10 0 40 80 120 160 200 0.5 1.0 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) 5

2SK1304 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 10 V 20 5V 10 VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 0.05 θch–c = 1.25°C/W, TC = 25°C PDM 0.02 0.03 0.01 D = PW lse T t Pu PW 1 Sho T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

2SK1304 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % 50 Ω 90 % 90 % . Vin = 10 V VDD = 30 V . td (on) tr td (off) tf 7

2SK1305 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1305 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.20 0.25 Ω ID = 5 A, VGS = 10 V * resistance ——————————— ——————————– — 0.25 0.35 ID = 5 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 525 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 205 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 5 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 50 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 170 — ns ———————————————————————————————— Fall time tf — 75 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 220 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1300. 2

2SK1305 Power vs. Temperature Derating Maximum Safe Operation Area 30 100 ea Ar n) is Channel Dissipation Pch (W) th DS (o 30 in R 10 n y tio b µs ra ited Drain Current ID (A) e 10 10 Op Lim 0 20 is µs PW 1 D C m ms = s O 10 3 pe ra tio (1 n sh 10 1.0 (T o t) C = 25 °C 0.3 Ta = 25°C ) 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 5.0°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 ulse PW T P hot 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1306 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • Low drive current • 4 V gate drive device – Can be driven from 5 V source 1 • Suitable for motor drive, DC-DC converter, 1. Gate power switch and solenoid drive 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1306 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.10 0.13 Ω ID = 8 A, VGS = 10 V * resistance ——————————— ——————————– — 0.13 0.18 ID = 8 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 11 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 340 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 100 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 250 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1301. 2

2SK1306 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 µs 10 Channel Dissipation Pch (W) 30 0 PW µs Drain Current ID (A) = 1 40 10 10 ms D m C s O (1 pe sh 3 ra ot tio ) n (T 20 1.0 C = Operation in this Area 25 is Limited by RDS (on) °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 4.17°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 ulse PW T P hot 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, 1 power switch and solenoid drive 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1307 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.065 0.085 Ω ID = 10 A, VGS = 10 V * resistance ——————————— ——————————– — 0.085 0.12 ID = 10 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1300 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 540 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 160 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ID = 10 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 100 — ns RL = 3 Ω ———————————————————————————————— Turn-off delay time td(off) — 300 — ns ———————————————————————————————— Fall time tf — 150 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 20 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1302. 2

2SK1307 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 Channel Dissipation Pch (W) 30 10 µs 0 µs Drain Current ID (A) PW 1 40 10 m = D s 10 C O m pe s 3 (1 ra tio Sh n o (T C t) 20 1.0 = Operation in this Area 25 is Limited by RDS (on) °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γS (t) · θch–c 0.1 θch–c = 3.57°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 ulse T P PW hot 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1313 L , 2SK1314 L , 2SK1313 S , 2SK1314 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features • Low on-resistance 1 2 3 • High speed switching 2, 4 1 • Low drive current 2 3 • No secondary breakdown S type L type • Suitable for switching regulator and DC-DC converter 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1313 VDSS 450 V ————— ——— 2SK1314 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1313 L , 2SK1313 S , 2SK1314 L , 2SK1314 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source 2SK1313 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1314 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1313 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1314 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1313 RDS(on) — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1314 — 1.2 1.5 ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 160 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 2.5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 25 — ns RL = 12 Ω ———————————————————————————————— Turn-off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 5 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2

2SK1313 L , 2SK1313 S , 2SK1314 L , 2SK1314 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1315 L , 2SK1316 L , 2SK1315 S , 2SK1316 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features • Low on-resistance 1 2 3 • High speed switching 2, 4 1 • Low drive current 2 3 • No secondary breakdown S type L type • Suitable for switching regulator, DC-DC converter and motor driver 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1315 VDSS 450 V ————— ——— 2SK1316 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1315 L , 2SK1315 S , 2SK1316 L , 2SK1316 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source 2SK1315 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1316 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1315 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1316 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1315 RDS(on) — 0.55 0.7 Ω ID = 4 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1316 — 0.60 0.8 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1150 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 340 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 17 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 100 — ns ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 350 — ns IF = 8 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2

2SK1315 L , 2SK1315 S , 2SK1316 L , 2SK1316 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1328, 2SK1329 Silicon N-Channel MOS FET Application TO–3PFM High speed power switching Features • Low on-resistance 2 • High speed switching • Low drive current • No secondary breakdown 1 1 2 • Suitable for switching regulator and DC-DC 3 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1328 VDSS 450 V ————— ——— 2SK1329 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1328, 2SK1329 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1328 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1329 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1328 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1329 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1328 RDS(on) — 0.40 0.55 Ω ID = 6 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1329 — 0.45 0.60 ——————————————————————————————————————————— Forward transfer admittance |yfs| 6.0 10 — S ID = 6 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 410 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ID = 6 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 5 Ω ———————————————————————————————— Turn-off delay time td(off) — 120 — ns ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.0 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 450 — ns IF = 12 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1165, 2SK1166. 2

2SK1328, 2SK1329 Power vs. Temperature Derating Maximum Safe Operation Area 120 100 10 Channel Dissipation Pch (W) 30 10 µs 0 Drain Current ID (A) µs 80 1 PW 10 D m C s = O pe 10 ra m 3 tio s n (1 (T Sh 40 C ot 1.0 Operation in this Area = ) 25 is Limited by RDS (on) °C ) 0.3 2SK1329 Ta = 25°C 2SK1328 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 θch–c = 2.08°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 l se PW T t Pu 1 Sho T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1540 L , 2SK1541 L , 2SK1540 S , 2SK1541 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features • Low on-resistance 1 2 • High speed switching 3 1 • Low drive current 2, 4 2 3 • No secondary breakdown S type L type • Suitable for switching regulator and DC-DC converter 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1540 VDSS 450 V ————— ——— 2SK1541 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1540 L , 2SK1540 S , 2SK1541 L , 2SK1541 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source 2SK1540 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1541 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1540 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1541 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1540 RDS(on) — 0.6 0.8 Ω ID = 4 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1541 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 280 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 95 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 320 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1157, 2SK1158. 2

2SK1540 L , 2SK1540 S , 2SK1541 L , 2SK1541 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1566, 2SK1567 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC 1 converter 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1566 VDSS 450 V ————— ——— 2SK1567 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1566, 2SK1567 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1566 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1567 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1566 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1567 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1566 RDS(on) — 0.6 0.8 Ω ID = 4 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1567 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 280 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 55 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 95 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 320 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1157, 2SK1158. 2

2SK1566, 2SK1567 Maximum Safe Operation Area Power vs. Temperature Derating 50 60 10 20 µs Channel Dissipation Pch (W) 10 0 10 PW µs Drain Current ID (A) 1 5 D = m 40 C 10 s O m pe s 2 ra (1 tio Sh 1 n ot (T ) 20 C = 0.5 25 Operation in this Area °C is Limited by RDS (on) ) 0.2 0.1 Ta = 25°C 2SK1567 0 50 100 150 2SK1566 0.05 Case Temperature TC (°C) 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 θch–c = 3.57°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 ul se PW T h ot P T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1620 L , 2SK1620 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 2 • Low on-resistance 3 2, 4 1 • High speed switching 2 3 • Low drive current S type L type • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 150 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1620 L , 2SK1620 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 120 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1200 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 550 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 85 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 20 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 50 — ns RL = 6 Ω ———————————————————————————————— Turn-off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 220 — ns IF = 10 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK740. 2

2SK1620 L , 2SK1620 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1621 L , 2SK1621 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 2 • Low on-resistance 3 2, 4 1 • High speed switching 2 3 • Low drive current S type L type • No secondary breakdown • Suitable for switching regulator, DC-DC 1 1. Gate converter and motor driver 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1621 L , 2SK1621 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.40 0.55 Ω ID = 4 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.7 4.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 820 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 370 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 48 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 400 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK741. 2

2SK1621 L , 2SK1621 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1622 L , 2SK1622 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 2 • Low on-resistance 3 2, 4 1 • High speed switching 2 3 • Low drive current S type L type • 4 V gate drive device – Can be driven from 5 V source 1 1. Gate • Suitable for motor drive, DC-DC converter, 2. Drain power switch and solenoid drive 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1622 L , 2SK1622 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * resistance ——————————— ——————————– — 0.05 0.06 ID = 15 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ID = 15 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 130 — ns RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 25 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK972. 2

2SK1622 L , 2SK1622 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1626, 2SK1627 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance 2 12 • High speed switching 3 • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1626 VDSS 450 V ————— ——— 2SK1627 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +125 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1626, 2SK1627 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1626 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1627 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1626 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ——————————– 2SK1627 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to 2SK1626 RDS(on) — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V * source on state ———— —————————— resistance 2SK1627 — 1.2 1.5 ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 160 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 2.5 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 25 — ns RL = 12 Ω ———————————————————————————————— Turn-off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 0.95 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 300 — ns IF = 5 A, VGS = 0, recovery time diF/dt = 100 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2

2SK1626, 2SK1627 Maximum Safe Operation Area Power vs. Temperature Derating 50 60 20 Channel Dissipation Pch (W) 10 10 µs 10 0 Drain Current ID (A) 1 µs 5 m PW Op 40 s D C = ra 10 tio 2 e m n (T s 1 (1 C= Sh 25 20 0.5 ot °C Operation in this Area ) is Limited by RDS (on) 0.2 ) 0.1 Ta = 25°C 2SK1627 2SK1626 0 50 100 150 0.05 Case Temperature TC (°C) 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 θch–c = 3.57°C/W, TC = 25°C 0.05 PDM 0.02 0.03 0.01 ulse D = PW P PW T hot 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK1648 L , 2SK1648 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 2 • Low on-resistance 3 2, 4 1 • High speed switching 2 3 • 4 V gate drive device S type L type – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, 1 1. Gate power switch and solenoid drive 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 40 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 1

2SK1648 L , 2SK1648 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.055 0.065 Ω ID = 8 A, VGS = 10 V * resistance ——————————— ——————————– — 0.075 0.095 ID = 8 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 8 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 450 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 140 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 10 — ns ID = 8 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 70 — ns RL = 3.75 Ω ———————————————————————————————— Turn-off delay time td(off) — 180 — ns ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 135 — ns IF = 15 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK971. 2

2SK1648 L , 2SK1648 S Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 40 20 0 50 100 150 Case Temperature TC (°C) 3

2SK1667 Silicon N Channel MOS FET Application TO-220AB TO–220AB High speed power switching Features • Low on–resistance • High speed switching • Low drive current 2 • No secondary breakdown 1 2 • Suitable for switchingregulator, DC–DC 3 1 convertor Gate 1.1. Gate Drain (Flange) 2.2. Drain (Flange) Source 3.3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1667 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.55 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 265 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID =4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 37 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 180 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1667 Power vs. Temperature Derating Maximum Safe Operation Area 80 100 Operation in this area is limited by R DS (on) 30 10 Pch (W) 60 µs 10 0 µs Drain Current I D (A) 10 1 Channel Dissipation m PW s 40 D 3 C = O 10 pe m ra s tio (1 1 n sh (T ot 20 c ) = 25 °C 0.3 ) Ta = 25°C 0 50 100 150 200 0.1 Case Temperature Tc (°C) 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 5.5 V 6V Pulse Test 8 8 V DS = 10 V Pulse Test Drain Current I D (A) 5V Drain Current I D (A) 6 6 4 4.5 V 4 Tc = 75°C 25°C 2 V GS = 4 V 2 – 25°C 0 1 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage V GS (V) 3

2SK1667 Drain-Source Saturation Voltage Static Drain-Source ON State vs. Gate-Source Voltage Resistance vs. Drain Current 10 5 Drain to Source Saturation Voltage Pulse Test Pulse Test Static Drain–Source On State 8 2 Resistance R DS (on) (Ω ) 1 V GS = 10 V 6 V DS (on) (V) I D = 10 A 0.5 4 15 V 0.2 5A 2 0.1 2A 0.05 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source ON State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 2.0 50 Forward Transfer Admittance 1.6 Pulse Test 20 Pulse Test Static Drain–Source On State V GS = 10 V V DS = 10 V – 25°C Resistance R DS (on) (Ω ) 10 1.2 25°C |y fs| (S) I D = 10 A Tc = 75°C 5 5A 0.8 2 2A 0.4 1 0 0.5 – 40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1667 Body-Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain-Source Voltage 500 1000 Ciss Reverse Recovery Time trr (ns) 200 Coss Capacitance C (pF) 100 100 50 Crss 10 20 di / dt = 100 A / µ s V GS = 0, Ta = 25°C V GS = 0 10 f = 1 MHz 5 1 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 . V GS = 10 V, V DD = 30 V . ID = 7 A PW = 2 µ s, duty 1 % 16 Drain to Source Voltage V DS (V) 400 200 Gate to Source Voltage VGS (V) V GS Switching Time t (ns) 100 td (off) 300 12 200 V 50 V DS 100 V tf 200 8 V DD = 50 V 20 tr V DD = 200 V td (on) 100 4 100 V 10 50 V 0 5 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1667 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 4 V GS = 10 V 2 V GS = 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 2.5°C / W, Tc = 25°C 0.02 PW D= T P DM 0.03 0.01 PW 1 shot Pulse T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1667 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL V out 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1668 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 12 3 • Low drive current 2 1. Gate • No secondary breakdown 2. Drain • Suitable for switchingregulator, DC–DC 3. Source 1 3. Source convertor 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1668 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.55 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 265 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 37 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 180 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1667. 2

2SK1668 Power vs. Temperature Derating Maximum Safe Operation Area 40 50 10 30 µs 10 0 µs Pch (W) 30 10 PW 1 m D = s C 10 Drain Current I D (A) O m 3 pe Channel Dissipation s ra (1 20 tio sh n ot (T ) 1.0 c = 25 °C Operation in this area ) 10 0.3 is limited by R DS (on) Ta = 25°C 0.1 0 50 100 150 200 0.05 Case Temperature Tc (°C) 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s(t) . θ ch – c 0.05 θ ch – c = 4.17°C / W, Tc = 25°C 0.02 PW D= T ulse P DM 0.03 ot P 1 sh PW 0.01 T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1697 Silicon N Channel MOS FET Application UPAK High speed power switching Features 1 2 3 • Low on–resistance • High speed switching 4 • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. 2, 4 • Suitable for DC – DC converter, motor drive, 1. Gate power switch, solenoid drive 2. Drain 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 0.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 1.5 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 0.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the alumina ceramic board (12.5 × 20 × 0.7mm) *** Marking is "EY". 1

2SK1697 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ———————————————————————————————————————————– Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ———————————————————————————————————————————– Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ———————————————————————————————————————————– Zero gate voltage drain current IDSS — — 50 µA VDS = 50 V, VGS = 0 ———————————————————————————————————————————– Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ———————————————————————————————————————————– Static drain to source on state RDS(on) — 1.3 1.7 Ω ID = 0.3 A resistance VGS = 10 V * ————————————————————————– — 1.8 2.5 Ω ID = 0.3 A VGS = 4 V * ———————————————————————————————————————————– Forward transfer admittance |yfs| 0.25 0.38 — S ID = 0.3 A VDS = 10 V * ———————————————————————————————————————————– Input capacitance Ciss — 30 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 13 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 4 — pF f = 1 MHz ———————————————————————————————————————————– Turn–on delay time td(on) — 3 — ns ID = 0.3 A ———————————————————————————————— Rise time tr — 8 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 18 — ns RL = 100 Ω ———————————————————————————————— Fall time tf — 14 — ns ———————————————————————————————————————————– Body–drain diode forward VDF — 1 — V IF = 0.5 A, VGS = 0 voltage ———————————————————————————————————————————– Body–drain diode reverse trr — 45 — ns IF =0.5 A, VGS = 0, recovery time diF/dt = 50 A/µs ———————————————————————————————————————————– * Pulse Test See characteristic curves of 2SK1336. 2

2SK1697 Power vs. Temperature Derating Maximum Safe Operation Area 1.6 10 3 Pch (W) 1.2 10 Drain Current I D (A) 10 µs 1 n is n) 0 tio a (o PW µs ra are DS 1 pe = Channel Dissipation R m O this by 10 s 0.8 0.3 in ted m i D s C (1 lim O pe Sh 0.1 ra ot tio ) 0.4 n 0.03 Ta = 25°C 0.01 0 50 100 150 200 Ambient Temperature Ta (°C) 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) 3

2SK1698 Silicon N Channel MOS FET Application UPAK High speed power switching Features 1 2 3 • Low on–resistance • High speed switching 4 • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. 2, 4 • Suitable for DC – DC converter, motor drive, 1. Gate power switch, solenoid drive 2. Drain 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 0.3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 1.2 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 0.3 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the alumina ceramic board (12.5 × 20 × 0.7mm) *** Marking is "FY". 1

2SK1698 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 50 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 3.5 4.5 Ω ID = 0.2 A resistance VGS = 10 V * ———————————————————————— — 4.5 6.5 Ω ID = 0.2 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 35 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 14 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 3.5 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 2 — ns ID = 0.2 A ———————————————————————————————— Rise time tr — 4 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 17 — ns RL = 150 Ω ———————————————————————————————— Fall time tf — 15 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 0.3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 80 — ns IF =0.5 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1337. 2

2SK1698 Power vs. Temperature Derating Maximum Safe Operation Area 1.6 5 3 1 Drain Current I D (A) Pch (W) 1.2 10 100 s µs µs PW 0.3 Channel Dissipation 1 = m 10 0.8 (o ea n) m 0.1 ar DC s R is (1 O by th DS pe sh d in ra o ite ion t) 0.03 tio lim at 0.4 n is per O 0.01 Ta = 25°C 0.005 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) 3

2SK1761 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 12 • Low drive current 3 2 • No secondary breakdown Gate 1.1. Gate • Suitable for switchingregulator, DC–DC Drain (Flange) 2.2. Drain (Flange) converter 1 3. Source 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1761 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.23 0.35 Ω ID = 6 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 8.0 — S ID = 6 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1100 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 68 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 6 A ———————————————————————————————— Rise time tr — 65 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 5 Ω ———————————————————————————————— Fall time tf — 44 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = 12 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1761 Power vs. Temperature Derating Maximum Safe Operation Area 160 100 10 30 µ Pch (W) 10 s 120 0 µs PW 1 Drain Current I D (A) 10 = m 10 s Channel Dissipation m D s C 80 (1 O sh pe 3 ot ra ) tio n (T Ta = 25°C c 1 = 40 25 °C ) 0.3 Operation in this area is limited by R DS (on) 0 50 100 150 200 0.1 Case Temperature Tc (°C) 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 10 V 6V Pulse Test V DS = 10 V 16 5.5 V 8 Pulse Test Drain Current I D (A) Drain Current I D (A) 12 6 5V Tc = 75°C 25°C 8 4 – 25°C 4.5 V 4 2 V GS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1761 Drain-Source Saturation Voltage Static Drain-Source on State vs. Gate-Source Voltage Resistance vs. Drain Current 5 5 Pulse Test Pulse Test Drain to Source Saturation Voltage 4 2 Static Drain–Source On State Resistance R DS (on) (Ω ) 1 3 VDS (on) (V) 0.5 V GS = 10 V 10 A 2 0.2 5A 15 V 1 ID = 2 A 0.1 0.05 0 4 8 12 16 20 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Sourve on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 50 V DS = 10 V Pulse Test Pulse Test Forward Transfer Admittance 0.8 20 Static Drain–Source on State V GS = 10 V Resistance R DS (on) (Ω ) Tc = –25°C 10 0.6 I D = 10 A |y fs| (S) 5 75°C 0.4 5A 25°C 2 2A 0.2 1 0 0.5 – 40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1761 Body-Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain-Source Voltage 500 10000 di / dt = 100 A / µ s V GS = 0 V GS = 0, Ta = 25°C f = 1 MHz Reverse Recovery Time trr (ns) 200 Ciss Capacitance C (pF) 1000 100 50 Coss 100 20 10 Crss 5 10 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 . V GS = 10 V,V DD = 30 V . I D = 12 A PW = 2 µs, duty 1 % Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 400 16 200 td (off) Switching Time t (ns) V GS 100 300 12 V DD = 200 V 50 tf V DS 100 V 200 8 50 V tr td (on) 20 100 V DD = 200 V 4 10 100 V 50 V 0 0 5 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Q g (nc) Drain Current I D (A) 5

2SK1761 Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current IDR (A) 16 12 8 4 V GS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.67°C / W, Tc = 25°C 0.02 PW lse D= T t Pu P DM 0.03 1 sho PW 0.01 T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1761 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1762 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 12 3 • Low drive current 1. Gate 2 1. Gate • No secondary breakdown 2. Drain 2. Drain • Suitable for switchingregulator, DC–DC 3. Source 1 3. Source converter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1762 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.23 0.35 Ω ID = 6 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 8.0 — S ID = 6 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1100 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 68 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 6 A ———————————————————————————————— Rise time tr — 65 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 5 Ω ———————————————————————————————— Fall time tf — 44 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = 12 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1761. 2

2SK1762 Power vs. Temperature Derating Maximum Safe Operation Area 80 50 10 30 µs 10 0 µs PW Pch (W) 10 1 60 = m D 10 s C O Drain Current I D (A) pe m s ra (1 3 Channel Dissipation tio sh n ot 40 (T ) c = 1 25 Operation in this area °C ) is limited by R DS (on) 20 0.3 Ta = 25°C 0.1 0 50 100 150 200 0.05 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s(t) . θ ch – c 0.05 θ ch – c = 3.57°C / W. Tc = 25°C PW 0.02 D= T P DM 0.03 PW 0.01 T 1 shot Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1764 Silicon N Channel MOS FET Application UPAK 1 Low frequency amplifier 2 3 High speed switching 4 Features • Low on–resistance 2, 4 Gate 1. 1. Gate • High speed switching 2. Drain • 4 V Gate drive device can be driven from 5 V 2. Drain 3. Source source 1 3. Source 4. Drain • Suitable for switchingregulator, DC–DC 4. Drain converter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID ±2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Channel power dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) *** Marking is "KY". 1

2SK1764 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1 — 2 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Drain to source cutoff current IDSS — — 10 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff current IGSS — — ±5 µA VGS = ±15 V, VDS = 0 ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 0.3 0.45 Ω VGS = 10 V resistance ID = 1 A* ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 0.4 0.60 Ω VGS = 4 V resistance ID = 1 A* ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.9 1.7 — S VDS = 10 V ID = 1 A* ——————————————————————————————————————————— Input capacitance Ciss — 140 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 75 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF f = 1 MHz ——————————————————————————————————————————— Turn on time ton — 18 — ns VDS = 10 V, ID = 1 A* ———————————————————————————————— Turn off time toff — 80 — ns RL = 30 Ω ——————————————————————————————————————————— * Pulse Test 2

2SK1764 Maximum Channel Power Dissipation Curve Safe Operation Area 1.6 10 Channel Power Dissipation Pch** (W) 3 PW 1m 1.2 ID (A) s = (** on the almina ceramic board) 10 1.0 m s (1 in n) D sh n (o C Drain Current io is DS o t op t) 0.3 ra a R er 0.8 pe re y at O is a d b io th ite n lim 0.1 0.4 0.03 Ta = 25°C 0.01 0 50 100 150 200 0.1 0.3 1.0 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10V 7V Pulse Test VDS = 10V 5V Pulse Test 4.5V 4V 4 4 I D (A) I D (A) 3 3.5V 3 Drain Current Drain Current 2 2 3V 1 1 V GS = 2.5V –25°C 75°C Ta = 25 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1764 Drain to Source Saturation Voltage Static Drain to Source On State vs. Gate to Source Voltage Resistance vs. Drain Current 1.0 5 (V) Pulse Test Static Drain to Source On State Resistance R DS (on) ( Ω) Pulse Test Drain to Source Saturation Voltage V DS (on) 0.8 2 VGS = 4V 2A 1.0 0.6 0.5 0.4 1A 10V 0.2 I D = 0.5A 0.2 0.1 0.05 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1.0 2 5 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source On State Forward Transfer Admittance vs. Resistance vs. Case Temperature Drain Current 1.0 5 Pulse Test V DS = 10V Static Drain to Source On State Resistance R DS (on) ( Ω) Pulse Test Forward Transfer Admittance |yfs| (S) Ta = 25°C 0.8 2 I D = 2A 1A 1.0 0.6 0.5A V GS = 4V 0.5 0.4 2A 0.5A 0.2 1A 0.2 V GS = 10V 0.1 0 0.05 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1.0 2 5 Case Temperature Tc (°C) Drain Current ID (A) 4

2SK1764 Typical Capacitance vs. Drain to Source Voltage Switching Time vs. Drain Current 1000 100 V GS = 0 t d (off) f = 1 MHz 300 50 tf Switching Time t (ns) Ciss C (pF) 100 20 ton Coss Capacitance 30 10 V GS = 10V Crss PW = 2µs, duty < 1% 10 5 3 2 1 1 0 10 20 30 40 50 0.05 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage V DS (V) Drain Current I D (A) Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 4 Reverse Drain Current I DR (A) 3 5V VGS = 0 2 1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 5

2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 1 2 3 • Low on–resistance • High speed switching 4 • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. 2, 4 • Suitable for DC – DC converter, motor drive, 1. Gate power switch, solenoid drive 2. Drain 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 1 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 2 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 1 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the alumina ceramic board (12.5 × 20 × 0.7mm) *** Marking is "HY". 1

2SK1772 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 50 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.6 Ω ID = 0.5 A resistance VGS = 10 V * ———————————————————————— — 0.6 0.85 Ω ID = 0.5 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.6 1.0 — S ID = 0.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 85 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 65 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 0.5 A ———————————————————————————————— Rise time tr — 15 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 40 — ns RL = 60 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 1 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 30 — ns IF = 1 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test 2

2SK1772 Power vs. Temparature Derating Maximum Safe Operation Area 1.6 10 Operation in this area is limited by R DS(on) 3 I D (A) PW = 100 µs Pch (W) 1.2 PW 1 PW = 1 D = Channel Dissipation m C Drain Current 10 s 0.8 O m 0.3 pe s ra tio n 0.1 0.4 0.03 Ta = 25°C 0 50 100 150 200 0.01 Ambient Temperature Ta (°C) 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 2.0 1.0 10 V 4V 3.5 V VDS = 10 V 5V Pulse test 1.6 0.8 I D (A) I D (A) Pulse test 1.2 3.0 V 0.6 Drain Current Drain Current 75°C 0.8 0.4 Tc = 25°C 2.5 V –25°C 0.4 0.2 VGS = 2 V 0 1 2 3 4 5 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1772 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current Static Drain to Source on State Resistance 2.0 10 R DS(on) ( Ω) Drain to Source Saturation Voltage Pulse test Pulse test V DS(on) (V) 5 1.6 2 1.2 1 2A VGS = 4 V 0.8 0.5 1A 10 V 0.4 I D = 0.5 A 0.2 0.1 0 2 4 6 8 10 0.05 0.1 0.2 0.5 1 2 5 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current Static Drain to Source on State Resistance 5.0 Forward Transfer Admittance |y fs | (S) 2.0 Pulse test R DS(on) ( Ω) –25°C 1.6 2.0 Tc = 25°C 1.0 1.2 2A 0.5 75°C 1A 0.8 VGS = 4 V 0.5 A 0.2 2A 0.4 0.1 V DS = 10 V VGS = 10 V I D = 0.5 A, 1 A Pulse test 0 0.05 –40 0 40 80 120 160 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1772 Body-Drain Diode Reverse Typical Capacitance vs. Drain to Recovery Time Source Voltage 500 1000 di/dt = 50 A/µs Reverse Recovery Time t rr (ns) VGS = 0 200 Ta = 25°C (pF) 100 100 Ciss C Coss 50 Capacitance Crss 10 20 10 VGS = 0 f = 1 MHz 5 1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 20 500 ID = 1 A VGS = 10 V V DS (V) VDD = 30 V Gate to Source Voltage V GS (V) VGS PW = 2 µs 40 16 200 VDD = 5 V duty ≤ 1 % t (ns) 10 V tf 20 V 100 Drain to Source Voltage 30 12 Switching Time 50 td(off) VDS 20 8 20 tr 10 4 td(on) VDD = 5 V 10 10V 20 V 0 5 0 0.8 1.6 2.4 3.2 4.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1772 Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse test I DR (A) 1.6 VGS = 10 V Reverse Drain Current 1.2 0.8 0, –5 V 0.4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 6

2SK1773 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC–DC converter 1 2 2 3 1. Gate 2. Drain (Flange) 1 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1000 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 15 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1773 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1000 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 800 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.5 2.0 Ω ID = 3 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.2 5.0 — S ID = 3 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 1700 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 700 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 315 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = 3 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 210 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.85 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1050 — ns IF = 5 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1773 Power vs. Temperature Derating Maximum Safe Operation Area 160 50 30 Operationm in this area is limited by RDS (on) 10 Pch (W) 10 10 µs 120 0 µs Drain Current I D (A) PW 1 D = m C 3 10 s O Channel Dissipation pe m ra s (1 tio 80 n sh 1 (T ot c ) = 25 °C ) 0.3 40 Ta = 25°C 0.1 0.05 10 30 100 300 1000 3000 10000 0 50 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 5 10 V 8V 5.5 V 8 4 VDS = 10 V Pulse Test Pulse Test Drain Current I D (A) Drain Current I D (A) 6 5V 3 4 2 Tc = 75°C 4V 25°C 2 1 V GS = 3.5 V –25°C 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1773 Drain-Source Saturation Voltage vs. Static Drain-Source on State Gate-Source Voltage Resistance vs. Current 20 50 Pulse Test Pulse Test Drain to Source Saturation Voltage 16 Static Drain–Source on State 20 Resistance R DS (on) ( Ω) 10 12 VDS (on) (V) 5 5A 8 V GS = 10 V 2 4 2A 1 ID = 1 A 0.5 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 10 10 Pulse Test 5 8 Static Drain–Source on State VGS = 10 V Forward Transfer Admittance Resistance R DS (on) (Ω ) Tc = – 25°C 2 6 25°C 75°C |y fs| (S) 1 ID = 5 A 4 0.5 2 2A 1A 0.2 V DS = 10 V Pulse Test 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5 Case Temperature T C (°C) Drain Current I D (A) 4

2SK1773 Body-Drain Diode Reverse Recovery Typical Capacitance vs. Drain- Time Source Voltage 5000 10000 Reverse Recovery Time trr (ns) 2000 Ciss Capacitance C (pf) 1000 1000 500 Coss di / dt = 100 A / µs 100 200 VGS = 0, Ta =25°C Crss 100 VGS = 0 f = 1 MHz 50 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Reverse Drain Current I DR (A) Dynamic Input Characteristics Switching Characteristics 1000 20 500 td (off) Drain to Source Voltage VDS (V) 800 16 200 Gate to Source Voltage VGS (V) V GS ID= 5 A tf Switing Time t (ns) VDS 100 600 12 tr V DD = 250 V 50 400 V 400 8 td (on) 600 V 20 . V DD = 600 V V GS = 10 V, VDD = 30 V . 200 4 PW = 2 µs, duty < 1% 400 V 10 250 V 0 5 0 40 80 120 160 200 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1773 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 4 VGS = 10 V 2 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.25°C / W, Tc = 25°C 0.02 Pulse PW hot D= T 1s P DM 0.03 0.01 PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1773 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1775 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • Low on–resistance • High speed switching • Low drive current • No secondary breakdown 1 2 3 • Suitable for switchingregulator, DC–DC converter 2 1. Gate 2. Drain 1 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 900 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1775 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.2 1.6 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = 4 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 1730 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 700 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 310 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = 4 A ———————————————————————————————— Rise time tr — 135 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 185 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 130 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 900 — ns IF = 8 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1342 2

2SK1775 Power vs. Temperature Derating Maximum Safe Operation Area 80 50 30 10 µs n) Drain Current I D (A) Pch (W) 10 n is 60 tio a (o 10 ra are DS 0 pe R PW µs 3 O this by D = 1 m n ted C 10 s Channel Dissipation i i O pe m 40 lim ra s 1 tio (1 n Sh (T ot c ) 0.3 = 25 20 °C ) 0.1 Ta = 25°C 0.05 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3

2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • Low on–resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC–DC converter 12 3 2 1. Gate 2. Drain (Flange) 1 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 900 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1807 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 3.0 4.0 Ω ID = 2 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.7 2.7 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 740 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 305 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 150 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 2 A ———————————————————————————————— Rise time tr — 60 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 80 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 800 — ns IF = 4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1340 2

2SK1807 Power vs. Temperature Derating Maximum Safe Operation Area 80 50 20 10 Drain Current I D (A) 10 Pch (W) µs 60 10 5 n s n) 0 µs a tio ea i (o PW 1 er ar R DS D p is y = m s 2 C 10 Channel Dissipation O th b O m 40 1 in ited pe s ra (1 lim tio Sh 0.5 n ot (T ) c = 20 0.2 25 °C 0.1 ) Ta = 25°C 0.05 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 2.08°C / W, Tc = 25°C 0.02 PW D= T P DM 0.03 0.01 PW 1 shot Pulse T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1808 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 12 3 • Low drive current 2 1. Gate 1. Gate • No secondary breakdown 2. Drain 2. Drain • Suitable for switchingregulator, DC–DC 3. Source 3. Source converter 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 900 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1808 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 3.0 4.0 Ω ID = 2 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.7 2.7 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 740 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 305 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 150 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 2 A ———————————————————————————————— Rise time tr — 60 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 80 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 800 — ns IF = 4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1340 2

2SK1808 Power vs. Temperature Derating Maximum Safe Operation Area 60 10 10 n) µs Channel Dissipation Pch (W) n io is (o at rea S 10 3 r pe a R D 0 Drain Current I D (A) PW 1 O this by µs m s D = in ited C 10 40 1 O lim m pe s ra (1 tio Sh 0.3 n ot (T ) c = 25 20 0.1 °C ) 0.03 Ta = 25°C 0.01 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s(t) . θ ch – c 0.05 θ ch – c = 3.57°C / W. Tc = 25°C PW 0.02 D= T P DM 0.03 PW 0.01 T 1 shot Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1809 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 1 • Low drive current 2 3 • No secondary breakdown • Suitable for switchingregulator, DC–DC 2 converter 1 1. Gate 1. Gate 2. Drain (Flange) 2. Drain (Flange) 3. Source 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1809 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.1 1.5 Ω ID = 2.5A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 2.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1000 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 250 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = 2.5 A ———————————————————————————————— Rise time tr — 45 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 105 — ns RL = 12 Ω ———————————————————————————————— Fall time tf — 55 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 500 — ns IF = 5 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1404 2

2SK1809 Power vs. Temperature Derating Maximum Safe Operation Area 90 50 30 Channel Dissipation Pch (W) 10 µ s Drain Current I D (A) 10 10 0 µs PW 60 1 = 3 m 10 s m D C s (1 1 O pe Sh ra ot 30 Operation in this tio ) area is limited n 0.3 (T by R DS(on) c = 25 °C 0.1 Ta = 25°C ) 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 2.08°C / W, Tc = 25°C 0.02 PW D= T P DM 0.03 0.01 PW 1 shot Pulse T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 2 3 • No secondary breakdown • Suitable for switchingregulator, DC–DC 1 converter 1. Gate 1. Gate 2. Drain 2. Drain 3. Source 3. Source Table 1 Ordering Information 3 Type No VDSS ———————————————————— 2SK1831 450V ———————————————————— 2SK1832 500V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage K1831 VDSS 450 V ————— ——————— K1832 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 30 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1831, 2SK1832 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source K1831 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— ——————————— K1832 500 — — ——————————————————————————————————————————-- Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage K1831 IDSS — — 250 µA VDS = 360 V, VGS = 0 ———— —————————— drain current K1832 VDS = 400 V, VGS= 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source K1831 RDS(on) — 0.6 0.8 Ω ID = 5 A on state resistance ———— ——————————— VGS = 10 V * K1832 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 280 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 5 A ———————————————————————————————— Rise time tr — 60 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 90 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 350 — ns IF = 10 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1157, 2SK1158 2

2SK1831, 2SK1832 Power vs. Temperature Derating Maximum Safe Operation Area 75 50 30 10 Channel Dissipation Pch (W) µs 10 µ 0 Drain Current I D (A) 10 PW s 1 D = m 50 C 10 s O m 3 pe s ra (1 tio sh n ot 1 Operation in this (T ) c area is limited = 25 25 by R DS (on) °C 0.3 ) Ta = 25°C 0.1 K1831 K1832 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 1 0.5 0.3 0.2 θch – c(t) = γ s(t). θ ch – c 0.1 0.1 θ ch – c = 2.50°C/W, Tc = 25°C 0.05 PDM 0.02 PW 0.03 D = —— 0.01 lse PW T t Pu 1 Sho T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1835 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • High breakdown voltage (VDSS = 1500V) • High speed switching 1 2 3 • Low drive current • No secondary breakdown D 1. Gate • Suitable for switchingregulator 2. Drain (Flange) 2. Drain (Flange) 3. Source 3. Source G S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 125 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1835 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 500 µA VDS = 1200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 4.6 7.0 Ω ID = 2 A resistance VGS = 15 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.9 1.4 — S ID = 2 A VDS = 20V * ——————————————————————————————————————————— Input capacitance Ciss — 1700 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 230 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 100 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = 2A ———————————————————————————————— Rise time tr — 80 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 230 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 80 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.85 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 2500 — ns IF = 4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1835 Power vs. Temperature Derating Maximum Safe Operation Area 200 50 30 Pch (W) 10 150 10 µs 10 Drain Current I D (A) 0 µs 1 PW m Channel Dissipation 3 D s C 100 O = pe 10 ra m 1 tio s n (1 (T sh c ot = ) 25 50 0.3 °C Operation in this ) area is ilmited by R DS (on) 0.1 Ta = 25°C 0 50 100 150 200 0.05 10 30 100 300 1000 3000 10000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V 8V Tc = –25°C Pulse Test VDS = 20 V 4 4 25°C Pulse Test 6V Drain Current I D (A) Drain Current I D (A) 75°C 3 3 5V 2 2 1 V GS = 4 V 1 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1835 Drain-Source Saturation Voltage vs. Static Drain-Source on State Gate-Source Voltage Resistance vs. Drain Current 25 50 Pulse Test Drain to Source Saturation Voltage Pulse Test Static Drain–Source on State 20 20 VGS = 10 V Resistance R DS (on) ( Ω) 3A 10 V DS (on) (V) 15 15 V 5 10 2A 2 5 ID = 1 A 1 0.5 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 25 10 Pulse Test 5 Pulse Test Static Drain–Source on State 20 Forward Transfer Admittance V GS = 15 V V DS = 20 V Tc = –25°C Resistance R DS (on) (Ω ) 2 15 25°C ID= 3 A 1 |yfs| (S) 10 75°C 0.5 2A 1A 5 0.2 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5 Case Temperature T C (°C) Drain Current I D (A) 4

2SK1835 Body-Drain Diode Reverse Typical Capacitance vs. Drain-Source Recovery Time Voltage 5000 10000 Reverse Recovery Time trr (ns) 2000 Ciss Capacitance C (pF) 1000 1000 500 di / dt = 100 A / µs VGS = 0, Ta = 25°C Coss 100 200 Crss V GS = 0 100 f = 1 MHz 5 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS Dynamic Input Characteristics Switching Characteristics 1000 20 1000 ID =4A 500 Drain to Source Voltage V DS (V) 800 16 td (off) Switching Time t (ns) VGS 200 600 V DS 12 V DD = 600 V 100 tf 400 400 V 8 50 tr 250 V V DD = 600 V 200 4 400 V 20 VGS = 10 V, duty 1% PW = 5 µ s 250 V 0 10 0 40 80 120 160 200 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1835 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 4 Reverse Drain Current I DR (A) 3 2 1 V GS = 15 V 0,–5 V 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.0°C / W, Tc = 25°C 0.02 ulse PW ot P D= T 1 sh P DM 0.03 0.01 PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1835 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1836, 2SK1837 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • Low on–resistance • High speed switching • Low drive current 2 • No secondary breakdown • Suitable for switchingregulator, DC–DC 1 1 converter 2 3 1. Gate Table 1 Ordering Information 2. Drain (Flange) 3 3. Source Type No VDSS ———————————————————— 2SK1836 450V ———————————————————— 2SK1837 500V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage K1836 VDSS 450 V ————— —————— K1837 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Channel dissipation Pch** 250 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1836, 2SK1837 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source K1836 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ————— —————————— K1837 500 — — ——————————————————————————————————————————-- Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage K1836 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ————— —————————— K1837 VDS = 400 V, VGS= 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source K1836 RDS(on) — 0.08 0.10 Ω ID = 25 A on state resistance ———— ——————————— VGS= 10 V * K1837 — 0.085 0.11 ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 8150 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2100 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 180 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 80 — ns ID = 25 A ———————————————————————————————— Rise time tr — 250 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 550 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 220 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 620 — ns IF = 50 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1836, 2SK1837 Power vs. Temperature Derating Maximum Safe Operation Area 400 1000 Operation in this area 300 is limited by R DS (on) Pch (W) 10 300 100 10 µ 0m s s Drain Current I D (A) 30 PW 1m Channel Dissipation = s DC 10 200 10 Op ms er (1 ati on sh (T ot) 3 c= 25 100 °C 1 ) 0.3 Ta = 25°C K1836 K1837 0 50 100 150 200 0.1 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 8V 6V V DS = 20 V 10 V Pulse Test 80 80 Pulse Test Drain Current I D (A) Drain Current I D (A) 5.5 V 60 60 40 5V 40 20 4.5 V 20 Tc = 75°C 25°C V GS = 4 V – 25°C 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1836, 2SK1837 Drain-Source Saturation Voltage vs. Static Drain-Source on State Gate-Source Voltage Resistance vs. Drain Current 5 1 50 A Pulse Test Drain to Source Saturation Voltage 0.5 4 Pulse Test Static Drain–Source on State 0.2 Resistance R DS (on) ( Ω) 3 VDS (on) (V) 0.1 V GS = 10, 15 V 2 20 A 0.05 1 I D = 10 A 0.02 0.01 0 4 8 12 16 20 5 10 20 50 100 200 500 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 0.5 50 Pulse Test VGS = 10 V Tc = – 25°C 0.4 20 Static Drain–Source on State Forward Transfer Admittance 25°C Resistance R DS (on) ( Ω) 10 75°C 0.3 5 |y fs | (S) I D = 50 A 0.2 20 A 2 0.1 10 A 1 V DS = 20 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1836, 2SK1837 Body-Drain Diode Reverse Recovery Typical Capacitance vs. Time Drain-Source Voltage 1000 10000 Ciss 500 Reverse Recovery Time trr (ns) Capacitance C (pF) 1000 Coss 200 100 di / dt = 100 A / µs 50 V GS = 0, Ta = 25°C 100 Crss VGS = 0 20 f = 1 MHz 10 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 500 20 5000 . V GS = 10 V,V DD = 30 V . V DD = 100 V PW = 2 µs, duty 1 % Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 400 250 V 16 2000 400 V Switching Time t (ns) 1000 300 V GS 12 td (off) VDS 500 200 8 tf 200 ID = 50 A tr V DD = 400 V 4 100 250 V 100 td (on) 100 V 0 50 0 80 160 240 320 400 0.5 1 2 5 10 20 50 Gate Charge Q g (nc) Drain Current I D (A) 5

2SK1836, 2SK1837 Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test 80 Reverse Drain Current I DR (A) 60 40 20 V GS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) D=1 Tc = 25°C 1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 0.5°C / W, Tc = 25°C 0.02 PW D= T P DM 0.03 0.01 PW T 1 shot Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1836, 2SK1837 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1838 L , 2SK1838 S Silicon N Channel MOS FET Application 4 DPAK–1 4 High speed power switching 12 3 12 3 Features S Type L Type • Low on–resistance • High speed switching Gate 1. 1. Gate • Low drive current Drain 2. 2. Drain 2, 4 • No secondary breakdown Source 3. 3. Source • Suitable for switchingregulator, DC–DC Drain 4. 4. Drain converter 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 1 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 2 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 1 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1838 L , 2SK1838 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 50 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 5.5 8.0 Ω ID = 0.5 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.3 0.5 — S ID = 0.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 60 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 30 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 5 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 5 — ns ID = 0.5 A ———————————————————————————————— Rise time tr — 6 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 10 — ns RL = 60 Ω ———————————————————————————————— Fall time tf — 4.5 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.96 — V IF = 1 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 160 — ns IF = 1 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1838 L , 2SK1838 S Power vs. Temperature Derating Maximum Safe Operation Area 20 10 3 Pch (W) 15 10 10 Drain Current I D (A) 0 µ DC PW s 1 1 s µ O = m pe 10 s Channel Dissipation ra m 10 tio s n (1 0.3 (T sh c ot = ) 25 °C 0.1 ) 5 Operation in this area is limited by R DS (on) 0.03 Ta = 25°C 0 50 100 150 200 0.01 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 1.0 1.0 8V 6V 10 V Pulse Test 0.8 5V 0.8 V DS = 10 V Pulse Test Drain Current ID (A) Drain Current I D (A) 0.6 0.6 4.5 V 0.4 0.4 4V 0.2 0.2 25°C Tc = 75°C V GS = 3.5 V – 25°C 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1838 L , 2SK1838 S Drain-Source Saturation Voltage vs. Static Drain-Source on State Gate-Source Voltage Resistance vs. Drain Current 5 50 Pulse Test Pulse Test Drain to Source Saturation Voltage 4 20 V GS = 10 V Static Drain–Source on State Resistance R DS (on) (Ω ) 10 3 VDS (on) (V) 0.5 A 5 2 2 0.2 A 1 ID = 0.1 A 1 0.5 0 4 8 12 16 20 0.02 0.05 0.1 0.2 0.5 1 2 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain-Source on State Forward Transfer Admittance vs. Resistance vs. Temperature Drain Current 25 5 Pulse Test Pulse Test VDS = 10 V 20 2 Forward Transfer Admittance V GS = 10 V Static Drain–Source on State Resistance R DS (on) (Ω ) 1 15 Tc = – 25°C |y fs | (S) I D = 0.5 A 0.5 25°C 10 75°C 0.2 0.1 A 5 0.2 A 0.1 0 0.05 – 40 0 40 80 120 160 0.02 0.05 0.1 0.2 0.5 1 2 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1838 L , 2SK1838 S Body-Drain Diode Reverse Recovery Typical Capacitance vs. Drain-Source Time Voltage 1000 1000 VGS = 0 f = 1 MHz 500 Reverse Recovery Time trr (ns) Capacitance C (pF) 100 200 Ciss 100 Coss 50 10 di / dt = 100 A / µ s V GS = 0, Ta = 25°C 20 Crss 10 1 0.05 0.1 0.2 0.5 1 2 5 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Sourve Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 100 . V GS = 10 V,V DD = 30 V . PW = 2 µs, duty 1 % I D = 0.5 A 50 Drain to Source Voltage VDS (V) 400 Gate to Source Voltage VGS (V) 16 V GS tf Switching Time t (ns) 20 300 12 td (off) VDD = 200 V 10 V DS 100 V 200 8 td (on) 50 V 5 tr 100 VDD = 200 V 4 2 100 V 50 V 0 1 0 4 8 12 16 20 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1838 L , 2SK1838 S Reverse Drain Current vs. Source to Drain Voltage 1.0 Pulse Test 0.8 Reverse Drain Current IDR (A) 0.6 0.4 0.2 VGS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C 0.02 se Pul PW D= T hot P DM 1s 0.03 0.01 PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK1838 L , 2SK1838 S Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout 10 % 10 % Vin 10 V 50 Ω . V DD = 30 V . 90 % 90 % td (on) tr td (off) tf 7

2SK1859 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low Drive Current • No secondary breakdown 1 23 1. Gate 1 • Suitable for Switching regulator 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 900 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 6 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 15 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 6 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1859 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 2.0 3.0 Ω ID = 3 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.3 3.7 — S ID = 3 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 980 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 400 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 195 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 3 A ———————————————————————————————— Rise time tr — 80 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 125 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 6 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1000 — ns IF = 6 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1341 2

2SK1859 Power vs. Temperature Derating Maximum Safe Operation Area 90 50 30 Channel Dissipation Pch (W) 10 Drain Current I D (A) µs 10 10 0 PW µs 60 1 ion is n) = m 3 at ea (o D r r S 10 s pe s a R D O hi y C m O s t b pe (1 1 in ed ra Sh it tio l im n ot (T ) 30 c 0.3 = 25 °C ) 0.1 Ta = 25°C 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 1 0.5 0.3 0.2 θch – c(t) = γ s(t). θ ch – c 0.1 0.1 θ ch – c = 2.08°C/W, Tc = 25°C 0.05 PDM 0.02 PW 0.03 D = —— 0.01 lse PW T t Pu 1 Sho T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 12 • Low drive current 3 • No secondary breakdown • Suitable for Switching regulator 1 1. Gate 2. Drain Table 1 Ordering Information 3. Source Type No. VDSS ———————————————————— 3 2SK1862 450 V ———————————————————— 2SK1863 500 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK1862 VDSS 450 V ————— ——— 2SK1863 VDSS 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1862, 2SK1863 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK1862 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK1863 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK1862 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ————————— 2SK1863 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source 2SK1862 RDS(on) — 2.0 2.8 Ω ID = 2 A, VGS = 10 V * on state resistance ———— ——————————— 2SK1863 — 2.2 3.0 ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 2.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 330 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 90 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 15 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = 2 A ———————————————————————————————— Rise time tr — 20 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 30 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 20 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 300 — ns IF = 3 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1153, 2SK1154 2

2SK1862, 2SK1863 Power vs. Temperature Derating Maximum Safe Operation Area 30 30 Channel Dissipation Pch (W) 10 10 µs Drain Current I D (A) 10 0 ion is n) PW µs 20 3 at a (o 1 er are DS = m Op his y R D 10 s t b (T C O m 1 in ed c s it = pe (1 l im 25 ra Sh °C tio ot 0.3 ) n ) 10 0.1 2SK1862 Ta = 25°C 2SK1863 0.03 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s(t) . θ ch – c 0.05 θ ch – c = 5.0°C / W, Tc = 25°C 0.02 PW D= T ulse P DM 0.03 ot P 1 sh PW 0.01 T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK1869 L , 2SK1869 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features • Low on–resistance • High speed switching 1 2 2, 4 3 • Low drive current 1 2 • No Secondary Breakdown 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 350 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1869 L , 2SK1869 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 350 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =280 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.6 0.8 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 635 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 230 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 60 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 240 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic cures of 2SK1400A 2

2SK1880 L , 2SK1880 S Silicon N Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • No secondary breakdown 12 3 • Suitable for Switching regulator 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 1.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 3.0 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 1.5 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1880 L , 2SK1880 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 6.5 8.0 Ω ID = 1 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 250 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 55 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 8 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 1 A ———————————————————————————————— Rise time tr — 25 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 35 — ns RL = 30 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 1.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 350 — µs IF = 1.5 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1880 L , 2SK1880 S Power vs. Temperature Derating 30 Maximum Safe Operation Area 10 Channel Dissipation Pch (W) 10 3 10 µ Drain Current I D (A) s 0µ 1 s PW 20 1 m s = DC n) d is 10 (o ite th O DS lim in m pe R is ion 0.3 s ra (1 by rea rat tio sh a pe n o (T O t) 10 0.1 c = 25 °C 0.03 ) Ta = 25°C 0.01 0.1 0.3 1 3 10 300 1000 0 50 100 150 Drain to Source Voltage V DS (V) Case Temperature Tc (°C) Typical Output Characteristics Typical Transfer Characteristics 2.0 2.0 5V Pulse Test Pulse Test 10 V VDS = 20 V 1.6 4.5 V 1.6 Drain Current I D ( A ) Drain Current I D (A) 1.2 1.2 4V 0.8 0.8 75°C Tc = 25°C 0.4 VGS = 3.5 V 0.4 –25°C 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1880 L , 2SK1880 S Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 20 100 Drain to Source Saturation Voltage Static Drain to Source on State Pulse Test 50 Pulse Test Resistance R DS (on) ( Ω) 16 V DS (on) (V) I D = 1.5 A 20 12 10 VGS = 10 V 8 1A 5 4 0.5 A 2 1 0 4 8 12 16 20 0.05 0.1 0.2 0.5 1 2 5 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 20 5 Pulse Test Static Drain to Source on State Forward Transfer Admittance VGS = 10 V V DS = 20 V Resistance R DS (on) ( Ω) 16 Pulse Test 2 Tc = –25°C 1 | yfs | (S) 12 ID = 1 A 0.5 75°C 8 0.5 A 0.2 25°C 4 0.1 0.05 –40 0 40 80 120 160 0.02 0.05 0.1 0.2 0.5 1 2 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1880 L , 2SK1880 S Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5000 1000 Reverse Recovery Time t rr (ns) di/dt = 100 A/µs VGS = 0 VGS = 0 Ciss f = 1 MHz 2000 Capacitance C (pF) Ta = 25°C 1000 Pulse Test 100 Coss 500 10 200 100 Crss 50 1 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Switching Characteristics Dynamic Input Characteristics 500 1000 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VGS VGS = 10 V I D = 1.5 A 200 PW = 2 µ s 800 16 Switching Time t (ns) duty < 1% = VDD = 100 V 250 V 100 : VDD = 30 V 600 400 V 12 50 t d (off) VDS 400 8 tf tr 20 200 VDD = 100 V 4 t d (on) 250 V 10 400 V 0 5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1880 L , 2SK1880 S Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current I DR (A) Pulse Test 1.6 1.2 0.8 VGS = 10 V 0.4 0 V, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (A) 6

2SK1910 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1. Gate • 4 V gate drive device can be driven from 2. Drain 5 V source 1 1 2 3. Source • Suitable for Switching regulator, DC – DC 3 converter • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Avalanche current IAP*** 25 A ——————————————————————————————————————————— Avalanche energy EAR*** 53 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1910 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 15 A resistance VGS = 10 V * ———————————————————————— — 0.043 0.06 Ω ID = 15 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 21 — S ID = 15 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 655 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 195 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 15 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 225 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = 25 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1910 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) 10 Drain Current ID (A) 100 µs 10 40 0 µs PW 30 1 D m C = s O 10 on a S ( re pe m ) a 10 ra s R hi s tio (1 by t n Sh D d in (T ot ite ion 20 c = ) l i m rat 3 25 i s pe °C O ) 1 Ta = 25°C 0.5 0 50 100 150 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 10 V 6V Pulse Test Tc = –25°C 5V Pulse Test 40 40 Drain Current I D (A) 4V 25°C Drain Current I D (A) VDS = 10 V 30 30 75°C 3.5 V 20 20 3V 10 10 VGS = 2.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1910 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 2.0 0.5 Drain to Source Saturation Voltage Static Drain to Source on State Pulse Test Pulse Test Resistance R DS (on) ( Ω) 1.6 0.2 VDS (on) (V) 0.1 1.2 0.05 VGS = 4 V 10 V 0.8 I D = 20 A 0.02 0.4 10 A 0.01 5A 0.005 0 2 4 6 8 10 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 100 Static Drain to Source on State Forward Transfer Admittance Pulse Test Resistance RDS (on) ( Ω) 50 V DS = 10 V 0.8 I D = 20 A Pulse Test 5 A, 10 A 20 Tc = –25°C |yfs| (S) 0.6 20 A 25°C VGS = 4 V 10 75°C 0.4 5 A, 10 A 5 0.2 10 V 2 0 1 –40 0 40 80 120 160 0.5 1 2 5 10 20 50 Case Temperature TC (°C) Drain Current I D (A) 4

2SK1910 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time t rr (ns) 500 di/dt = 50 A/ µs, VGS = 0 Ta = 25°C Capacitance C (pF) Ciss 200 1000 Coss 100 Crss 50 100 20 VGS = 0 f = 1 MHz 10 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 VGS : Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VGS = 10 V, VDD = 30 V 500 PW = 2 µs, duty < 1% = 80 16 Switching Time t (ns) VDD = 50 V td (off) 25 V 200 60 10 V 12 V DS tf 100 40 8 I D = 25 A 50 tr 20 VDD = 50 V 4 td (on) 25 V 20 10 V 0 10 0 20 40 60 80 100 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1910 Reverse Drain Current vs. Maximum Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 50 100 Reverse Drain Current I DR (A) Pulse Test I AP = 25 A 40 80 VDD= 25 V duty < 0.1% Rg > 50 Ω = 30 60 VGS = 10 V 20 40 5V 0, –5 V 10 20 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform 1 VDSS EAR = ·L· IAP 2 · L 2 VDSS – V DD VDS Monitor I AP V(BR) DSS Monitor I AP Rg VDS D.U.T VDD ID Vin 15 V 50 Ω VDD 0 6

2SK1910 7

2SK1918 L , 2SK1918 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 1 2 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Avalanche current IAP*** 25 A ——————————————————————————————————————————— Avalanche energy EAR*** 53 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1918 L , 2SK1918 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 15 A resistance VGS = 10 V * ———————————————————————— — 0.043 0.06 Ω ID = 15 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 21 — S ID = 15 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 655 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 195 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 15 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 225 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = 25 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1910 2

2SK1918 L , 2SK1918 S Power vs. Temperature Derating 80 Pch (W) 60 Channel Dissipation 40 20 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK1919 L , 2SK1919 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 1 2 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain 3. Source converter 4. Drain • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Avalanche current IAP*** 40 A ——————————————————————————————————————————— Avalanche energy EAR*** 137 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1919 L , 2SK1919 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.018 0.022 Ω ID = 20 A resistance VGS = 10 V * ———————————————————————— — 0.023 0.028 Ω ID = 20 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3530 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1480 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 33 — ns ID = 20 A ———————————————————————————————— Rise time tr — 155 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 450 — ns RL = 1.5 Ω ———————————————————————————————— Fall time tf — 220 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF = 40 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1911 2

2SK1933 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance • High speed switching 2 • No secondary breakdown • Suitable for Switching regulator 1 1. Gate 1 2. Drain 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 900 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 30 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 150 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1933 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 900 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.9 1.2 Ω ID = 5 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7 — S ID = 5 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 2620 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 830 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 320 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 5 A ———————————————————————————————— Rise time tr — 140 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 285 — ns RL = 6 Ω ———————————————————————————————— Fall time tf — 170 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1600 — ns IF = 10 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1933 Power vs. Temperature Derating Maximum Safe Operation Area 150 50 30 10 µs Channel Dissipation Pch (W) 10 0 10 µs Drain Current I D (A) PW 1 n) by re n R a is m d a tio (o s = 100 ite this era D S 10 D C lim in Op 3 m O pe s (1 ra Sh tio 1 n ot (T ) c = 50 25 0.3 °C ) 0.1 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 Pulse Test Pulse Test 10 V 6V VDS = 20 V 8 8 Drain Current I D (A) Drain Current I D (A) 5V 6 6 Tc = 25°C 4 4 4V 75°C –25°C 2 2 VGS = 3.5 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1933 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 1.0 10 Pulse Test Static Drain to Source on State Pulse Test 5 Resistance R DS (on) ( Ω) Drain to Source Saturation 0.8 Voltage V DS (on) (V) 2 0.6 VGS = 10 V 5A 1 0.4 0.5 0.2 2A ID = 1 A 0.2 0.1 0 4 8 12 16 20 0.5 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 2.5 50 ID = 5 A Pulse Test Static Drain to Source on State Pulse Test Forward Transfer Admittance VDS = 20 V Resestance R DS (on) (Ω ) 2 VGS = 10 V 2A 20 1A 10 1.5 Tc = 25°C | y fs | (S) 5 1 –25°C 75°C 2 0.5 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1933 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 5000 10000 Reverse Recovery Time t rr (ns) Ciss 2000 Capacitance C (pF) 1000 1000 Coss 500 200 100 di/dt = 100 A/ µ s, VGS = 0 Crss Ta = 25°C 100 VGS = 0 f = 1 MHz 50 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 500 VGS td(off) Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) V DD = 250 V 800 400 V 16 200 tf Switching Time t (ns) 600 V 100 tr 600 VDS 12 50 I D = 10 A td(on) 400 8 20 200 V DD = 250 V 4 10 : VGS = 10 V, VDD = 30 V 400 V PW = 5 µ s, duty < 1% = 600 V 0 5 0 40 80 120 160 200 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1933 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 4 VGS = 10 V 2 0, –5 V 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage V SD (V) 6

2SK1933 7

2SK1934 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance • High speed switching 2 • No secondary breakdown • Suitable for Switching regulator 1 1. Gate 1 2. Drain 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1000 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 24 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 150 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1934 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1000 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 800 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.2 1.6 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 6 — S ID = 4 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 2690 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 920 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 375 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 35 — ns ID = 4 A ———————————————————————————————— Rise time tr — 135 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 300 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 205 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1600 — µs IF = 8 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1934 Power vs. Temperature Derating Maximum Safe Operation Area 150 50 30 10 Channel Dissipation Pch (W) ea ar µs n) Drain Current I D (A) (o R his 10 10 DS by t 0 d in PW µs ite tion 100 1 = m lim ra 3 10 DC s is pe m O O s pe (1 ra 1 sh tio n ot 50 (T ) c= 0.3 25 °C ) Ta = 25°C 0.1 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 8V Pulse Test 8 8 Pulse Test VDS = 20 V Drain Current I D (A) Drain Current I D (A) 5V 6 6 4 4 Tc = 25°C 4V 2 2 75°C –25°C VGS = 3.5 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1934 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 1.0 50 Drain to Source Saturation Voltage Static Drain to Source on State Pulse Test Pulse Test Resistance R DS(on) (Ω ) 0.8 20 5A 10 VDS (on) (V) 0.6 5 0.4 2 2A 0.2 VGS = 10 V ID= 1 A 1 0.5 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 5 50 Static Drain to Source on State Forward Transfer Admittance Pulse Test Resistance R DS (on) (Ω ) 4 20 Pulse Test VGS = 10 V VDS = 20 V 10 3 ID = 5 A 2A Tc = 25°C |yfs | (S) 5 2 1A –25°C 75°C 2 1 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature TC (°C) Drain Current I D (A) 4

2SK1934 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 5000 10000 Reverse Recovery Time t rr (ns) di/dt = 100 A/ µs, VGS = 0 Ciss 2000 Ta = 25°C Capacitance C (pF) 1000 1000 Coss 500 Crss 100 200 100 VGS = 0 V f = 1 MHz 50 10 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 500 VGS td(off) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 250 V tf 800 400 V 16 200 Switching Time t (ns) 600 V 100 tr 600 12 VDS ID = 8 A 50 td(on) 400 8 20 200 VDD = 250 V 4 400 V 10 : VGS = 10 V, VDD = .30 V 600 V PW = 5 µs, duty >1% = 0 5 0 40 80 120 160 200 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1934 Reverse Drain Current vs. Source to Drain Voltage 10 I DR (A) Pulse Test 8 Reverse Drain Current 6 4 2 VGS = 10 V 0, –5 V 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) 6

2SK1934 7

2SK1947 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • Low on–resistance • High speed switching 2 • Low Drive Current • Built–In Fast Recovery Diode (trr = 140 ns) • Suitable for Switching regulator, 1 Motor Control 1. Gate 2. Drain 1 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Channel dissipation Pch** 200 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1947 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.047 0.06 Ω ID = 25 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 20 30 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 5810 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2360 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 270 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 75 — ns ID = 25 A ———————————————————————————————— Rise time tr — 270 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 420 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 200 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 140 — ns IF = 50 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1947 Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 300 Channel Dissipation Pch (W) 10 10 µs Drain Current I D (A) 100 0µ DC PW s 200 Op = 1m 30 era 10 s tio ms n( (1 10 T Operation in this c = s area is limited 25 hot) °C 3 by R DS (on) ) 100 1 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 50 10 V 8V Pulse Test VDS = 10 V 80 6V 40 Drain Current I D ( A ) Drain Current I D (A) Pulse Test 60 30 5.5 V 40 20 Tc = 25°C 5V 20 10 75°C –25°C 4V VGS = 3.5 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1947 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 5 0.5 Drain to Source Saturation Voltage Static Drain to Source on State Pulse Test Pulse Test Resistance R DS (on) ( Ω) 4 0.2 V DS (on) (V) 0.1 3 50 A VGS = 10 V 0.05 2 0.02 20 A 1 I D = 10 A 0.01 0.005 0 4 8 12 16 20 2 5 10 20 50 100 200 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.20 100 Pulse Test Forward Transfer Admittance Static Drain to Source on State Pulse Test 50 V DS = 10 V Resistance R DS (on) ( Ω ) 0.16 VGS = 10 V Tc = 25°C 20 | yfs | (S) 0.12 –25°C 75°C I D = 50 A 10 0.08 5 10 A, 20 A 0.04 2 0 1 –40 0 40 80 120 160 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1947 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 500 10000 Ciss Reverse Recovery Time t rr (ns) di/dt = 100 A/µs 200 V GS = 0, Ta = 25°C Capacitance C (pF) Coss 100 1000 50 100 Crss 20 10 VGS = 0 f = 1 MHz 5 10 1 2 5 10 20 50 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 500 20 1000 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 200 V VGS td(off) 100 V 500 400 16 Switching Time t (ns) 50 V tr tf 200 300 ID = 50 A 12 VDS 100 t d(on) 200 8 50 100 VDD = 200 V 4 100 V 20 : VGS = 10 V, VDD = 30 V PW = 2 µ s, duty < 1% = 50 V 0 10 0 80 160 240 320 400 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1947 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 VGS = 10 V 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 6

2SK1947 7

2SK1948 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • Low on–resistance • High speed switching 2 • Low Drive Current • No Secondary Breakdown • Suitable for Switching regulator, 1 Motor Control 1. Gate 2. Drain 1 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Channel dissipation Pch** 200 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1948 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.047 0.06 Ω ID = 25 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 20 30 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 5830 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2310 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 265 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 70 — ns ID = 25 A ———————————————————————————————— Rise time tr — 260 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 430 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 190 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 450 — ns IF = 50 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1948 Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 300 a are n) Channel Dissipation Pch (W) this S (o 1 in D ion y R 10 0 µ Drain Current ID (A) 100 rat b 0µ s pe mited D PW O li in C = 1 s 200 30 Op 10 ms er at ms ion (1 10 (T Sh c = ot 3 25 ) 100 °C ) 1 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 50 10 V 8V Pulse Test 80 40 Pulse Test Drain Current ID (A) Drain Current I D (A) VDS = 10 V 6V 60 30 5.5 V 40 Tc = 25°C 20 5V –25°C 20 4V 10 75°C VGS = 3.5 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1948 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 5 0.5 Drain to Source Saturation Voltage Static Drain to Source on State Resistance R DS (on) ( Ω) Pulse Test Pulse Test 4 0.2 VDS (on) (V) 0.1 3 VGS = 10 V 50 A 0.05 2 0.02 1 20 A 0.01 I D = 10 A 0.005 0 4 8 12 16 20 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.2 100 Static Drain to Source on State Forward Transfer Admittance Resistance RDS (on) ( Ω) VGS = 10 V V DS = 10 V 0.16 Pulse Test 50 Pulse Test 20 Tc = 25°C |yfs| (S) 0.12 75°C I D= 50 A 10 –25°C 0.08 5 10 A, 20 A 0.04 2 0 1 –40 0 40 80 120 160 0.5 1 2 5 10 20 50 Case Temperature TC (°C) Drain Current I D (A) 4

2SK1948 Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5000 10000 Reverse Recovery Time t rr (ns) Ciss 2000 di/dt = 100 A/µs, VGS = 0 Capacitance C (pF) Ta = 25°C Coss 1000 1000 500 200 100 Crss 100 VGS = 0 f = 1 MHz 50 10 1 2 5 10 20 50 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 1000 VGS Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) t d(off) VDD = 200 V 500 Switching Time t (ns) 400 16 100 V tr tf 50 V 200 300 12 I D = 50 A 100 t d (on) V DS 200 8 50 100 VDD = 200 V 4 20 : VGS = 10 V, VDD = 30 V 100 V PW = 5 µs duty ≤ 1% 50 V 0 10 0 80 160 240 320 400 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1948 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 VGS = 10 V 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 6

2SK1948 7

2SK1949 L , 2SK1949 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Avalanche current IAP*** 5 A ——————————————————————————————————————————— Avalanche energy EAR*** 2.1 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1949 L , 2SK1949 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.15 Ω ID = 3 A resistance VGS = 10 V * ———————————————————————— — 0.15 0.2 Ω ID = 3 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3 5.5 — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 390 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 190 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 3 A ———————————————————————————————— Rise time tr — 42 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 90 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 55 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 60 — ns IF = 5 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1949 L , 2SK1949 S Power vs. Temperature Derating Maximum Safe Operation Area 40 50 10 µs 20 Pch (W) 10 I D (A) 0µ 30 10 P s DC W 1m 5 = s Op 10 er ati ms Channel Dissipation Operation in Drain Current on ( 2 this area is (T 1sh 20 limited by R DS(on) c= ot) 1 25° C) 0.5 10 0.2 0.1 Ta = 25 °C 0.05 0 50 100 150 200 0.5 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V Pulse Test 5V 8 4V V DS = 10 V 8 I D (A) (A) 3.5 V Pulse Test 3V ID 6 6 Drain Current Drain Current 4 4 2.5 V 75 °C –25 °C 2 2 VGS = 2 V Tc = 25 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK1949 L , 2SK1949 S Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Sasuration Voltage V DS(on) (V) Pulse Test 0.8 0.5 5A 0.6 0.2 0.4 4V 2A 0.1 VGS = 10 V 0.2 ID=1A 0.05 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 20 Static Drain to Source on State Resistance 0.5 R DS(on) ( Ω) Pulse Test V DS = 10 V 10 Pulse Test 0.4 2A 5 0.3 ID=5A 1A V GS = 4 V Tc = –25 °C 0.2 2 25 °C 75 °C 5A 1A 0.1 1 10 V 2A 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1949 L , 2SK1949 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) di dt / = 50 AµS, Ta = 25 °C 500 Ciss Capacitance C (pF) 200 V GS = 0, Pulse Test 100 200 Coss 50 100 50 20 Crss VGS = 0 10 20 f = 1 MHz 5 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 V GS = 10 V, V DD = 30 V V GS (V) V DS (V) PW = 5 µs, duty < 1 % 80 V DD = 50 V 16 200 Switching Time t (ns) 25 V t d(off) 10 V 100 Gate to Source Voltage Drain to Source Voltage 60 12 VDS tf 50 VGS 40 8 I D= 5 A 20 tr t d(on) 20 V DD = 10 V 4 10 25 V 50 V 5 0 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1949 L , 2SK1949 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 10 2.5 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 5 A Reverse Drain Current I DR (A) V DD = 25 V 8 2 duty < 0.1 % Rg > 50 Ω 6 10 V 1.5 V GS = 0, –5 V 4 5V 1 2 0.5 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK1949 L , 2SK1949 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW ho 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK1950 Silicon N Channel MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 • 2.5 V gate drive device can be driven from 3 3 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1950 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.2 0.25 Ω ID = 2 A resistance VGS = 10 V * ———————————————————————— — 0.3 0.45 Ω ID = 0.6 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (6) (10) — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (350) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (200) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (80) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns ID = 2 A ———————————————————————————————— Rise time tr — (50) — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — (100) — ns RL = 15 Ω ———————————————————————————————— Fall time tf — (60) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (1.2) — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (100) — ns IF = 3 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1950 Power vs. Temperature Derating 16 Pch (W) 12 Channel Dissipation 8 4 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK1951 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 1 • Low drive current 2 3 • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Avalanche current IAP*** 25 A ——————————————————————————————————————————— Avalanche energy EAR*** 53 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1951 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 15 A resistance VGS = 10 V * ———————————————————————— — 0.043 0.06 Ω ID = 15 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 21 — S ID = 15 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 655 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 195 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 15 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 225 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = 25 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1910 2

2SK1951 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 µ 10 s n) d is (o ite th 0µ Channel Dissipation Pch (W) DS lim in 30 PW s R is tion Drain Current I D (A) by rea era 1 = 10 m a p O s 40 10 D m C s O (1 pe Sh ra ot 3 tio ) n (T c = 20 1 25 °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) 3

2SK1952 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 1 • Low drive current 2 3 • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Avalanche current IAP*** 40 A ——————————————————————————————————————————— Avalanche energy EAR*** 137 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK1952 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.018 0.022 Ω ID = 20 A resistance VGS = 10 V * ———————————————————————— — 0.023 0.028 Ω ID = 20 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3530 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1480 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 33 — ns ID = 20 A ———————————————————————————————— Rise time tr — 155 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 450 — ns RL = 1.5 Ω ———————————————————————————————— Fall time tf — 220 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF = 40 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1911 2

2SK1952 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) n) d is (o ite th 10 lim in 100 Drain Current I D (A) R is ion µs by rea rat 10 40 a pe 0 O µs DS 30 PW 1 m = s 10 D 10 m C s O (1 pe 20 Sh ra tio ot 3 ) n (T c = 25 1 Ta = 25°C °C ) 0.5 0 50 100 150 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) 3

2SK1957 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 2 3 • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1 1. Gate converter,Motor Control 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1957 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.33 0.45 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 4.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 700 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 260 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 4 A ———————————————————————————————— Rise time tr — 45 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 35 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 150 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1957 Power vs. Temperature Derating Maximum Safe Operation Area 60 50 10 30 (o a DS are 10 n) s µ Channel Dissipation Pch (W) y R this 0 d b in PW 1 s ite on µ Drain Current ID (A) 10 m lim ti is pera D = s 10 O 40 C O m 3 pe s ra (1 tio Sh 1 n ot (T ) c 20 = 25 0.3 °C ) Ta = 25 °C 0.1 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 6V 5.5 V 8 Pulse Test 8 Pulse Test Drain Current ID (A) Drain Current I D (A) VDS = 10 V 6 5V 6 4 4.5 V 4 75°C 2 4V 2 –25°C Tc = 25°C VGS = 3.5 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1957 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 2.0 10 Drain to Source Saturation Voltage Static Drain to Source on State 5 Resistance R DS (on) ( Ω) 5A Pulse Test 1.6 VDS (on) (V) 2 1.2 Pulse Test VGS = 10 V 1 0.8 2A 0.5 15 V 0.4 I D = 1A 0.2 0.1 0 4 8 12 16 20 0.5 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 50 Static Drain to Source on State Forward Transfer Admittance Resistance R DS (on) ( Ω ) Pulse Test V DS = 10 V 0.8 20 VGS = 10 V Pulse Test 10 |yfs| (S) ID = 5 A 0.6 5 Tc = 25°C 0.4 1 A, 2 A –25°C 75°C 2 0.2 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature TC (°C) Drain Current I D (A) 4

2SK1957 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 500 1000 Reverse Recovery Time t rr (ns) Ciss 200 Capacitance C (pF) Coss 100 100 50 Crss 20 di/dt = 100 A/µs, VGS = 0 10 Ta = 25°C 10 VGS = 0 f = 1 MHz 5 1 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 VGS : VGS = 10 V, VDD = 30 V Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) PW = 2 µs, duty < 1% = VDD = 150 V 200 Switching Time t (ns) 400 16 100 V 50 V 100 300 12 td (off) ID = 7 A 50 tf 200 8 V DS td (on) 20 100 VDD = 150 V tr 4 100 V 10 50 V 0 5 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1957 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 4 VGS = 10 V 0, –5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 6

2SK1957 7

2SK1971 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1 converter,Motor Control 1. Gate 2. Drain 1 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 35 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 140 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 35 A ——————————————————————————————————————————— Channel dissipation Pch** 200 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK1971 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.19 0.23 Ω ID = 18A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 16 24 — S ID = 18A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 4320 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1120 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 130 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 50 — ns ID = 18A ———————————————————————————————— Rise time tr — 170 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 320 — ns RL = 1.67Ω ———————————————————————————————— Fall time tf — 130 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF =35 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 530 — ns IF = 35 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK1971 Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 Operation in this area is Channel Dissipation Pch (W) 300 limited by RDS (on) 10 100 Drain Current I D (A) 10 µs PW 0µ 200 s 30 = 1m 10 DC m s 10 Op s( 1 er Sh at ot ion ) 3 (T 100 c= 1 25 °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 6V 5.5 V 10 V VDS = 20 V 40 40 Drain Current I D (A) Drain Current I D (A) Pulse Test Pulse Test 30 5V 30 Tc = 25°C 20 20 75°C –25°C 4.5 V 10 10 VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

2SK1971 Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current 20 5 Drain to Source Saturation Voltage Static Drain to Source on State Resistance R DS (on) (Ω ) Pulse Test 16 2 Pulse Test VDS (on) (V) 1 12 50 A 0.5 8 VGS = 10 V 0.2 20 A 4 I D = 10 A 0.1 0.05 0 4 8 12 16 20 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 1.0 50 –25°C State Resistance R DS (on) (Ω ) Pulse Test Forward Transfer Admittance Tc = 25°C Static Drain to Source on 0.8 VGS = 10 V 20 10 75°C 0.6 I D = 50 A | y fs | (S) 20 A 5 0.4 2 VDS = 20 V 0.2 10 A Pulse Test 1 0 0.5 –40 0 40 80 120 160 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK1971 Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 10000 Ciss Reverse Recovery Time t rr (ns) 500 Capacitance C (pF) 200 1000 Coss 100 50 100 di/dt = 100 A/ µ s, VGS = 0 Ta = 25°C Crss 20 VGS = 0 f = 1 MHz 10 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 1000 VGS Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) V DD = 400 V 500 td(off) 800 250 V 16 Switching Time t (ns) 100 V 200 tr 600 12 tf 100 VDS I D = 35 A 400 8 50 td(on) 200 V DD = 400 V 4 20 : VGS = 10 V, VDD = 30 V 250 V Pw = 5 µ s, duty < 1% = 100 V 0 10 0 40 80 120 160 200 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK1971 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 VGS = 0, –5 V VGS = 10 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 6

2SK1971 7

2SK2008 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1 converter,Motor Control 1. Gate 2. Drain 1 3. Source 2 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2008 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.15 Ω ID = 10 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 9.0 14 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2340 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 160 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 10 A ———————————————————————————————— Rise time tr — 125 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 190 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF = 20 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See chracteristic curves of 2SK2007 2

2SK2008 Power vs. Temperature Derating Maximum Safe Operation Area 100 90 10 µ s µs 10 Channel Dissipation Pch (W) 0 30 Drain Current I D (A) 1 PW m DC s =1 60 10 0m Op er s( ati 1S on ho (T 3 c= t) 25 °C 30 1 Operation in this ) area is limited by R DS(on) 0.3 Ta = 25°C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) 3

2SK2059 L , 2SK2059 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 6 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2059 L , 2SK2059 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS =500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 3.8 5.0 Ω ID = 2A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.2 2.0 — S ID = 2A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 295 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 70 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 12 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = 1A ———————————————————————————————— Rise time tr — 25 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 30Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF =3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 220 — ns IF = 3A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2059 L , 2SK2059 S 3

2SK2059 L , 2SK2059 S 4

2SK2059 L , 2SK2059 S 5

2SK2075 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance • High speed switching 2 • Low Drive Current • No secondary breakdown 1. Gate • Suitable for Switching regulator 1 2. Drain 1 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2075 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.105 0.13 Ω ID = 10 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 9 14 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2400 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 970 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 145 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 10 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 220 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 95 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.3 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 330 — ns IF = 20 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2075 Power vs. Temperature Derating Maximum Safe Operation Area 160 100 10 10 µ 0 µs s Pch (W) 30 I D (A) PW 1 120 = m D 10 s C 10 m O pe s (1 Channel Dissipation Drain Current ra Operation in sh tio n 80 3 this area is ot (T limited by R DS(on) ) c = 25 1 °C ) 40 0.3 Ta = 25 °C 0.1 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 Pulse Test 8V 40 6V 40 I D (A) 10 V (A) V DS = 10 V Pulse Test ID 30 30 Drain Current Drain Current 20 20 5V –25 °C 10 4.5 V Tc = 25 °C 10 75 °C V GS = 4 V 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2075 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 5 5 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 4 2 1 Drain to Source Voltage 3 I D = 20 A 0.5 2 0.2 10 V 10 A 1 5A 0.1 VGS = 15 V 0.05 0 4 8 12 16 20 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 100 Forward Transfer Admittance |yfs| (S) R DS(on) ( Ω) Pulse Test VGS = 10 V 0.4 30 –25 °C 10 Tc = 25 °C 0.3 I D = 20 A 75 °C 3 0.2 10 A 1 5A 0.1 0.3 V DS = 10 V Pulse Test 0 0.1 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2075 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) Ciss Capacitance C (pF) 200 100 1000 Coss 50 100 20 di / dt = 100 A / µs Crss V GS = 0, Ta = 25 °C 10 VGS = 0 f = 1 MHz 5 10 0.05 0.1 0.2 0.5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 V GS (V) V DS (V) I D = 20 A t d(off) VGS 400 16 200 Switching Time t (ns) V DD = 50 V 100 V 100 tf Gate to Source Voltage Drain to Source Voltage 300 200 V 8 tr 50 VDS t d(on) 200 4 20 100 V DD = 200 V 2 100 V 10 V GS = 10 V, V DD = 30 V 50 V PW = 5 µs, duty < 1 % 0 5 0 20 40 60 80 100 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2075 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 10 V 5V 10 V GS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW ho 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2075 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2084 L , 2SK2084 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2084 L , 2SK2084 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.04 0.053 Ω ID = 4 A resistance VGS = 10 V * ———————————————————————— — 0.058 0.075 Ω ID = 4 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5 9 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 800 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 165 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 60 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 5 Ω ———————————————————————————————— Fall time tf — 80 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 80 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2084 L , 2SK2084 S Power vs. Temperature Derating Maximum Safe Operation Area 40 50 30 10 µs Pch (W) I D (A) 100 µs 30 10 PW 1 = m 10 s DC ms Channel Dissipation Drain Current 3 (T O (1 c = pe sh 20 Operation in ot) this area is 25 rati °C on 1 limited by R DS(on) ) 10 0.3 Ta = 25 °C 0.1 0 50 100 150 200 0.3 1 3 10 30 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V Pulse Test 6V 16 4V V DS = 10 V I D (A) 16 (A) Pulse Test 3.5 V ID 12 12 Drain Current Drain Current 8 8 3V 4 Tc = 75 °C VGS = 2.5 V 4 25 °C –25 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2084 L , 2SK2084 S Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 0.5 0.2 Drain to Source Saturation Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.4 0.1 V GS = 4 V 0.3 I D= 5 A 0.05 0.2 10 V 2A 0.02 0.1 1A 0.01 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.20 20 Forward Transfer Admittance |yfs| (S) R DS(on) ( Ω) Pulse Test V DS = 10 V 0.16 10 Pulse Test 5 0.12 5A Tc = –25 °C 25 °C 0.08 V GS = 4 V 1A 2 75 °C 2A 0.04 1A 1 2A 10 V 5A 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2084 L , 2SK2084 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 200 10000 Reverse Recovery Time trr (ns) Capacitance C (pF) 100 1000 Ciss 50 Coss di / dt = 20 A / µs 100 V GS = 0, Ta = 25 °C Crss 20 VGS = 0 f = 1 MHz 10 10 0.1 0.2 0.5 1 2 5 10 0 4 8 12 16 20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 20 200 V GS (V) V DS (V) t d(off) 40 V DD = 20 V VGS 16 Switching Time t (ns) 100 10 V 5V Gate to Source Voltage Drain to Source Voltage 30 8 tf 50 VDS ID = 7 A 20 4 V GS = 10 V tr V DD = 20 V PW = 5 µs 20 duty < 1 % t d(on) 10 V DD = 20 V 2 10 V 5V 0 10 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2084 L , 2SK2084 S Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 10 V 5V 12 V GS = 0, –5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2084 L , 2SK2084 S Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 20 V 90% 90% td(on) tr td(off) tf 7

2SK2085 Silicon N Channel MOS FET Application TO–92 MOD. High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 1 2. Drain converter 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 1.0 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 4.0 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 1.0 A ——————————————————————————————————————————— Channel dissipation Pch** 0.9 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2085 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.6 0.9 Ω ID = 0.5 A resistance VGS = 10 V * ———————————————————————— — 0.75 1.35 Ω ID = 0.5 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.7 1.2 — S ID = 0.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 130 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 50 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 12 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = 0.5 A ———————————————————————————————— Rise time tr — 6.5 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 55 — ns RL = 60 Ω ———————————————————————————————— Fall time tf — 20 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.85 — V IF = 1.0 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 80 — ns IF = 1.0 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2085 Power vs. Temperature Derating Maximum Safe Operation Area 1.6 10 3 10 Pch (W) 10 µs I D (A) 0 1 PW 1 µs 1.2 m = s 10 0.3 (1 m DC sh s Channel Dissipation Drain Current Operation in ot 0.8 Op ) 0.1 this area is er at limited by R DS(on) ion 0.03 0.4 0.01 0.003 Ta = 25°C 0.001 0 50 100 150 200 0.1 0.3 1 3 10 30 100 200 Ambient Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 6V Pulse Test 8V 5V 4V 4 10 V V DS = 10 V 4 I D (A) (A) Pulse Test ID 3 3.5 V 3 Drain Current Drain Current 2 3V 2 1 2.5 V –25 °C 1 VGS = 2 V Tc = 25 °C 75 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2085 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 1.0 2 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test V DS(on) (V) Drain to Source Saturation Voltage 0.8 1 V GS = 4 V 1A 0.6 0.5 10 V 0.4 0.5 A 0.2 0.2 I D = 0.2 A 0.1 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 2.0 R DS(on) ( Ω) Pulse Test 5 1.6 0.2 A 0.5 A Tc = –25 °C 2 25 °C 1.2 ID=1A 75 °C 1 V GS = 4 V 1A 0.8 0.5 A 0.5 0.2 A 10 V 0.4 V DS = 10 V 0.2 Pulse Test 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2085 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 200 1000 di / dt = 50 A / µs 500 Reverse Recovery Time trr (ns) V GS = 0, Ta = 25 °C Capacitance C (pF) 100 200 Ciss 100 50 Coss 50 20 10 Crss 20 5 VGS = 0 2 f = 1 MHz 10 1 0.02 0.05 0.1 0.2 0.5 1 2 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 200 20 200 V GS (V) V DS (V) 100 160 16 t d(off) Switching Time t (ns) I D= 1 A V DD = 25 V 50 50 V Gate to Source Voltage V GS = 10 V Drain to Source Voltage 120 80 V 8 tf V DD = 30 V 20 PW = 2 µs VDS 80 VGS 4 duty < 1 % 10 t d(on) 40 2 5 V DD = 25 V tr 50 V 80 V 2 0 0 2 8 6 8 10 0.02 0.05 0.1 0.2 0.5 1 2 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2085 Reverse Drain Current vs. Souece to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4 3 2 V GS = 0, –5 V 10 V 1 5V 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage V DS (V) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 6

2SK2096 Silicon N Channel MOS FET Application TO-3P High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1 2 • Suitable for switching regulator, DC-DC 3 1. Gate converter 2. Drain • Avalanche ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 45 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 180 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 45 A ——————————————————————————————————————————— Avalanche current IAP*** 45 A ——————————————————————————————————————————— Avalanche energy EAR*** 173 mJ ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2096 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.018 0.022 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.023 0.028 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 25 37 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3530 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1480 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 33 — ns ID = 25 A ———————————————————————————————— Rise time tr — 160 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 450 — ns RL = 1.5 Ω ———————————————————————————————— Fall time tf — 230 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.3 — V IF = 45 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 130 — ns IF = 45 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1911. 2

2SK2096 Power vs. Temperature Derating Maximum Safe Operation Area 160 500 300 10 Pch (W) µs I D (A) 10 120 100 0 PW D µs C 1 O = m pe s 30 10 ra Channel Dissipation Drain Current tio m n s 80 (T (1 10 c s = ho Operation in 25 t) this area is °C limited by R DS(on) ) 40 3 1 Ta = 25 °C 0.5 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Maximun Avalanche Energy vs. Channel Temperature Derating 200 Repetive Avalanche Energy E AR (mJ) I AP = 45 A 160 V DD = 25 V duty < 0.1% Rg > 50 Ω 120 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (°C) 3

2SK2096 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW ho 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit and Waveform VDSS 1 2 L EAR = • L • I AP • V DS 2 VDSS – V DD Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 4

2SK2097 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter. 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 16 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2097 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.8 2.4 Ω ID = 2 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.2 3.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 140 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 25 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = 2 A ———————————————————————————————— Rise time tr — 30 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 60 — ns RL = 15Ω ———————————————————————————————— Fall time tf — 35 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 300 — ns IF = 4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1402. 2

2SK2097 Power vs. Temperature Derating 40 Pch (W) 30 Channel Dissipation 20 10 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2114, 2SK2115 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No secondary breakdown 12 3 • Suitable for Switching regulator 1 1. Gate Table 1 Ordering Information 2. Drain Type No. VDSS 3. Source ———————————————————— 3 2SK2114 450 V ———————————————————— 2SK2115 500 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK2114 VDSS 450 V ————— ——— 2SK2115 VDSS 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2114, 2SK2115 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK2114 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK2115 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK2114 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ————————— 2SK2115 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source 2SK2114 RDS(on) — 1.0 1.4 Ω ID = 2.5 A, VGS = 10 V * on state resistance ———— ——————————— 2SK2115 — 1.2 1.5 ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 640 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 160 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 2.5 A ———————————————————————————————— Rise time tr — 25 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns RL = 12 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 300 — ns IF = 5 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristics curve of 2SK1155, 2SK1156. 2

2SK2114, 2SK2115 Power vs. Temperature Derating 40 Maximum Safe Operation Area 50 Pch (W) 20 10 30 10 µs 10 0 Drain Current ID (A) 1 µs 5 m PW Op s D Channel Dissipation C = ra 10 tio 20 2 e m n (T s 1 (1 C= Sh 25 0.5 ot °C Operation in this Area ) is Limited by RDS (on) 10 0.2 ) 0.1 Ta = 25°C 2SK1627 2SK1626 0.05 1 3 10 30 100 300 1,000 0 50 100 150 200 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 TC = 25°C 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 θch–c = 3.57°C/W, TC = 25°C 0.05 PDM 0.02 0.03 0.01 ulse D = PW P PW T hot 1S T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK2116, 2SK2117 Silicon N Channel MOS FET Application TO-220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No secondary breakdown 12 3 • Suitable for Switching regulator 1 Table 1 Ordering Information 1. Gate Type No. VDSS 2. Drain ———————————————————— 3. Source 3 2SK2116 450 V ———————————————————— 2SK2117 500 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK2116 VDSS 450 V ————— ——— 2SK2117 VDSS 500 ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2116, 2SK2117 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK2116 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 breakdown voltage ———— —— 2SK2117 500 ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage 2SK2116 IDSS — — 250 µA VDS = 360 V, VGS = 0 drain current ———— ————————— 2SK2117 VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source 2SK2116 RDS(on) — 0.6 0.8 Ω ID = 4 A, VGS = 10 V * on state resistance ———— ——————————— 2SK2117 — 0.7 0.9 ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1050 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 280 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 95 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 40 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 320 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1157, 2SK1158. 2

2SK2116, 2SK2117 Power vs. Temperature Derating 40 Maximum Safe Operation Area 50 Pch (W) 10 20 µs 10 30 10 0 µs PW Drain Current ID (A) 1 5 D = m C 10 s O Channel Dissipation pe m 2 ra s 20 tio (1 n Sh 1 (T ot C ) = 0.5 25 Operation in this Area °C 10 is Limited by RDS (on) ) 0.2 0.1 Ta = 25°C 2SK1567 2SK1566 0.05 0 1 3 10 30 100 300 1,000 50 100 150 200 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 0.1 θch–c (t) = γ S (t) · θch–c 0.1 θch–c = 3.57°C/W, TC = 25°C 0.05 PDM 0.02 0.03 D = PW 0.01 lse PW T ho t Pu T 1S 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 3

2SK2118 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 1 23 • Suitable for Switching regulator, DC – DC 1 converter,Motor Control 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2118 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.1 1.5 Ω ID = 2.5 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 2.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1000 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 250 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 12 — ns ID = 2.5 A ———————————————————————————————— Rise time tr — 45 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 105 — ns RL = 12Ω ———————————————————————————————— Fall time tf — 55 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 500 — ns IF = 5 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1404. 2

2SK2118 Power vs. Temperature Derating 40 Pch (W) 30 Channel Dissipation 20 10 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2119 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Avalanche current IAP*** 25 A ——————————————————————————————————————————— Avalanche energy EAR*** 53 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2119 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 15 A resistance VGS = 10 V * ———————————————————————— — 0.043 0.06 Ω ID = 15 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 21 — S ID = 15 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 655 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 195 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 15 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 225 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 145 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 25 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = 25 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1910. 2

2SK2119 Power vs. Temperature Derating Maximum Safe Operation Area 60 100 10 µ 10 s n) d is Channel Dissipation Pch (W) (o ite th 0µ DS lim in 30 PW s R is tion Drain Current I D (A) by rea era 1 = 10 m a p O s 40 10 D C m O s pe (1 ra Sh tio ot 3 n ) (T c 20 = 1 25 °C ) 0.3 Ta = 25°C 0.1 0 50 100 150 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) 3

2SK2120 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 12 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 40 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 160 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 40 A ——————————————————————————————————————————— Avalanche current IAP*** 40 A ——————————————————————————————————————————— Avalanche energy EAR*** 137 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2120 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.018 0.022 Ω ID = 20 A resistance VGS = 10 V * ———————————————————————— — 0.023 0.028 Ω ID = 20 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 22 35 — S ID = 20 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3530 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1480 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 33 — ns ID = 20 A ———————————————————————————————— Rise time tr — 155 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 450 — ns RL = 1.5 Ω ———————————————————————————————— Fall time tf — 220 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 40 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF = 40 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1911. 2

2SK2120 Power vs. Temperature Derating Maximum Safe Operation Area 60 500 300 Channel Dissipation Pch (W) n) d is (o ite th 10 lim in 100 Drain Current I D (A) R is ion µs t ea ra 10 40 ar pe 0 O µs DS 30 PW 1 m by = s 10 D 10 m C s O (1 pe 20 Sh ra tio ot 3 ) n (T c = 25 1 Ta = 25°C °C ) 0.5 0 50 100 150 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) 3

2SK2121 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 5 V source 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain 1 converter 2 3. Source • Avalanche ratings 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Avalanche current IAP*** 50 A ——————————————————————————————————————————— Avalanche energy EAR*** 214 mJ ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2121 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.007 0.01 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.009 0.016 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 40 65 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 8330 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 3500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 550 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 50 — ns ID = 25 A ———————————————————————————————— Rise time tr — 270 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 1400 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 560 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 150 — ns IF = 50 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2121 Power vs. Temperature Derating Maximum Safe Operation Area 160 1000 Pch (W) 300 I D (A) 10 µs 120 10 100 0µ 1m s PW Channel Dissipation Drain Current s 80 DC =1 30 0m Op er ati s( on 1s 10 (T ho Operation in c= t) 40 this area is 25 limited by R DS(on) °C 3 ) Ta = 25 °C 1 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 50 10 V 6V V DS = 10 V 80 4V Pulse Test I D (A) 40 (A) 3.5 V 3V –25 °C ID 60 30 Tc = 25 °C Drain Current 75 °C Drain Current 40 20 VGS = 2.5 V 20 10 Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2121 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 1.0 0.05 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.8 0.02 0.01 4V 0.6 Drain to Source Voltage 0.005 VGS = 10 V I D = 50 A 0.4 0.002 0.2 20 A 0.001 10 A 0.0005 0 2 4 6 8 10 1 3 10 30 100 300 1000 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.05 100 Forward Transfer Admittance |yfs| (S) R DS(on) ( Ω) Pulse Test 30 –25 °C 0.04 Tc = 25 °C 10 0.03 75 °C 3 0.02 I D = 50 A 1 V GS = 4 V 0.01 10 A V DS = 10 V 10 A 20 A 0.3 10 V 20 A Pulse Test 0 50 A 0.1 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2121 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 100000 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 10000 Ciss 100 50 Coss 1000 20 Crss 10 di / dt = 50 A / µs VGS = 0 V GS = 0, Ta = 25 °C f = 1 MHz 5 100 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 5000 V GS (V) V GS = 10 V, V DD = 30 V V DS (V) VGS PW = 5 µs, duty < 1 % 80 16 2000 Switching Time t (ns) t d(off) V DD = 10 V 25 V 1000 Gate to Source Voltage Drain to Source Voltage 60 50 V 12 tf VDS 500 40 I D = 50 A 8 200 tr 20 V DD = 10 V 4 100 t d(on) 25 V 50 V 50 0 0 80 160 240 320 400 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2121 Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 100 250 Repetive Avalanche Energy E AR (mJ) Pulse Test Reverse Drain Current I DR (A) I AP = 50 A 80 200 V DD = 25 V 10 V duty < 0.1 % 60 150 Rg > 50 Ω 5V V GS = 0, –5 V 40 100 20 50 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 L EAR = • L • I AP • V DS 2 VDSS – V DD Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2121 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2144 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 600 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 6 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2144 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 3.8 5.0 Ω ID = 1 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.2 2.0 — S ID = 1 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 295 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 70 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 12 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = 1 A ———————————————————————————————— Rise time tr — 25 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 30Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 2 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 220 — ns IF = 2 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1572. 2

2SK2144 Power vs. Temperature Derating 40 Pch (W) 30 Channel Dissipation 20 10 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2174 L , 2SK2174 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching 4 Features 1 2 • Low on–resistance 3 • High speed switching 2, 4 • No secondary breakdown • Suitable for Switching regulator, DC – DC 1 1 2 converter 3 1. Gate 2. Drain 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 120 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2174 L , 2SK2174 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.22 0.27 Ω ID = 10 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2800 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 780 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 90 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 32 — ns ID = 10 A ———————————————————————————————— Rise time tr — 115 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 200 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 500 — µs IF = 20 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curves of 2SK1170. 2

2SK2174 L , 2SK2174 S Power vs. Temperature Derating 160 Pch (W) 120 Channel Dissipation 80 40 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2175 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 1. Gate 5 V source 1 2. Drain 1 • Suitable for Switching regulator, DC – DC 2 3. Source 3 converter • Avalanche ratings 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Avalanche current IAP*** 10 A ——————————————————————————————————————————— Avalanche energy EAR*** 8.5 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2175 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.10 0.13 Ω ID = 8 A resistance VGS = 10 V * ———————————————————————— — 0.13 0.18 Ω ID = 8 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 8 — S ID = 8 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 390 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 190 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 8 A ———————————————————————————————— Rise time tr — 65 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 90 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.3 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — ns IF = 15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2175 Power vs. Temperature Derating Maximum Safe Operation Area 40 100 10 µs Pch (W) 30 10 PW 0µ 30 s = 1 D 10 ms Drain Current ID (A) 10 C O ms (o rea p Channel Dissipation (T era (1 S n) a y R this 20 c t 3 = ion hot DS d b in 25 ) ite on lim ati °C is per 1 ) O 10 0.3 Ta = 25 °C 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V Pulse Test 5V 8 4V V DS = 10 V 8 I D (A) (A) 3.5 V Pulse Test 3V ID 6 6 Drain Current Drain Current 4 4 2.5 V 75 °C –25 °C 2 2 VGS = 2 V Tc = 25 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2175 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Sasuration Voltage V DS(on) (V) Pulse Test 0.8 0.5 5A 0.6 0.2 0.4 4V 2A 0.1 VGS = 10 V 0.2 ID=1A 0.05 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 20 Static Drain to Source on State Resistance 0.5 R DS(on) ( Ω) Pulse Test V DS = 10 V 10 Pulse Test 0.4 2A 5 0.3 ID=5A 1A V GS = 4 V 2 Tc = –25 °C 0.2 25 °C 75 °C 5A 1A 1 0.1 10 V 2A 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2175 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) di dt / = 50 AµS, Ta = 25 °C 500 Ciss Capacitance C (pF) 200 V GS = 0, Pulse Test 100 200 Coss 50 100 50 20 Crss VGS = 0 10 20 f = 1 MHz 5 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 V GS = 10 V, V DD = 30 V V GS (V) V DS (V) PW = 5 µs, duty < 1 % 80 V DD = 50 V 16 200 Switching Time t (ns) 25 V t d(off) 10 V 100 Gate to Source Voltage Drain to Source Voltage 60 12 VDS tf 50 VGS 40 8 I D= 5 A 20 tr t d(on) 20 V DD = 10 V 4 10 25 V 50 V 5 0 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2175 Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 10 10 Repetive Avalanche Energy E AR (mJ) Pulse Test Reverse Drain Current I DR (A) I AP = 10 A 8 8 V DD = 25 V duty < 0.1 % 6 10 V 6 Rg > 50 Ω V GS = 0, –5 V 4 5V 4 2 2 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS L 1 2 V DS EAR = • L • I AP • 2 VDSS – V DD Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2175 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2202 Silicon N Channel MOS FET Application TO-220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 120 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2202 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 120 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 100 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = 4 A resistance VGS = 10 V * ———————————————————————— — 0.35 0.55 Ω ID = 4 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 420 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 140 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 35 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 9 — ns ID = 4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 140 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 65 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.35 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 320 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2202 Power vs. Temperature Derating Maximum Safe Operation Area 40 20 10 µs 10 10 0 Pch (W) µs I D (A) DC PW 1 30 5 m O = s pe 10 ra m tio s (1 Channel Dissipation Drain Current 2 n s Operation in (T ho 20 c t) 1 this area is = 25 limited by R DS(on) °C 0.5 ) 10 0.2 Ta = 25 °C 0.1 0 50 100 150 200 2 5 10 20 50 100 200 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics 10 Typical Transfer Characteristics 10 V Pulse Test 10 6V 4V 8 V DS = 10 V I D (A) 8 (A) 3.5 V Pulse Test ID 6 6 Drain Current Drain Current 4 3V 4 Tc = –25 °C 2 VGS = 2.5 V 25 °C 2 75 °C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2202 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 2.0 5 Drain to Source Saturation Voltage Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test V DS(on) (V) 1.6 I D= 5 A Pulse Test 2 1.2 1 0.8 0.5 2A V GS = 4 V 0.4 1A 10 V 0.2 0.1 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 1.0 V DS = 10 V R DS(on) ( Ω) Pulse Test 5 Pulse Test 0.8 ID=5A Tc = 75 °C 2A 2 25 °C 0.6 1A –25 °C 1 0.4 V GS = 4 V 5A 1, 2 A 0.5 0.2 10 V 0.2 0 0.1 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2202 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 2000 VGS = 0 1000 Reverse Recovery Time trr (ns) 500 f = 1 MHz Capacitance C (pF) 500 Ciss 200 200 100 100 Coss 50 50 Crss 20 di / dt = 50 A / µs, V GS = 0 20 Ta = 25 °C, Pulse Test 10 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 200 20 500 V GS (V) V DS (V) VGS 200 t d(off) 160 16 Switching Time t (ns) I D= 7 A 100 Gate to Source Voltage tf Drain to Source Voltage 120 12 VDS V DD = 100 V 50 50 V V GS = 10 V tr 80 25 V 8 20 V DD = 30 V PW = 2 µs duty < 1 % V DD = 100 V 10 40 50 V 4 t d(on) 25 V 5 0 3 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2202 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 4 5V 10 V V GS = 0, –5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.03 T 0.02 0.0 1 lse PW pu h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2202 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2203 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • 4 V gate drive device can be driven from 5 V cource 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 1 3. Source 2 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Avalanche current IAP*** 50 A ——————————————————————————————————————————— Avalanche energy EAR*** 214 mJ ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2203 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.007 0.01 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.009 0.013 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 40 65 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 8330 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 3500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 550 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 50 — ns ID = 25 A ———————————————————————————————— Rise time tr — 270 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 1400 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 560 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 150 — ns IF = 50 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK2121. 2

2SK2203 Power vs. Temperature Derating Maximum Safe Operation Area 80 1000 Pch (W) 300 I D (A) 10 µs 60 10 0µ 100 s 1m PW Channel Dissipation Drain Current s 40 =1 30 0m DC Op s( er 1s 10 ati ho Operation in on t) 20 this area is (T limited by R DS(on) c= 2 5° 3 C) Ta = 25 °C 1 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) 3

2SK2204 L , 2SK2204 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 2 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 1 2 3 • 4 V gate drive device can be driven from 5 V cource 1 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 45 A ——————————————————————————————————————————— Drain peak current ID* 180 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 45 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2204 L , 2SK2204 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.011 0.015 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.016 0.022 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 23 38 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 400 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 435 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 45 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 75 — ns IF = 45 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2204 L , 2SK2204 S Power vs. Temperature Derating Maximum Safe Operation Area 80 500 200 10 µs Pch (W) I D (A) 10 100 0µ 60 PW s 50 1m =1 DC 0m s Op Channel Dissipation Drain Current era s( 20 tio 1s 40 Operation in n( ho Tc t) 10 this area is =2 limited by R DS(on) 5° 5 C) 20 2 1 Ta = 25 °C 0.5 0 50 100 150 200 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 50 10 V Pulse Test 5V 4.5 V V DS = 10 V 80 4V 40 Pulse Test I D (A) (A) ID 60 3.5 V 30 Drain Current Drain Current 40 20 Tc = 75°C 3V –25°C 25°C 20 10 2.5 V VGS = 2 V 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2204 L , 2SK2204 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1.0 0.5 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.8 0.2 I D = 50 A 0.1 0.6 Drain to Source Voltage 0.05 0.4 20 A 0.02 VGS = 4 V 0.2 0.01 10 A 10 V 0.005 0 2 4 6 8 10 1 3 10 30 100 300 1000 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 500 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.04 300 V DS = 10 V R DS(on) ( Ω) Pulse Test Pulse Test 0.032 100 I D = 50 A 20 A 30 Tc = –25 °C 0.024 V GS = 4 V 25 °C 10 A 10 75 °C 0.016 30 0.008 10 V 10, 20, 50 A 1 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2204 L , 2SK2204 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 5000 200 Capacitance C (pF) Ciss 100 2000 Coss 50 1000 500 20 Crss 10 di / dt = 50 A / µs 200 VGS = 0 V GS = 0, Ta = 25 °C f = 1 MHz 5 100 0.05 0.1 0.2 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 5000 V GS (V) V DS (V) 2000 80 V DD = 10 V 16 Switching Time t (ns) 1000 25 V t d(off) 500 Gate to Source Voltage tf Drain to Source Voltage 60 V GS 12 200 100 tr 40 I D = 45 A 8 50 V DS t d(on) 20 4 20 V DD = 10 V 10 V GS = 10 V, V DD = 30 V 25 V PW = 5 µs, duty < 1 % 0 5 0 40 80 120 160 200 0.05 0.1 0.2 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2204 L , 2SK2204 S Reverse Drain Current vs. Souece to Drain Voltage 50 Pulse Test Reverse Drain Current I DR (A) 40 10 V 30 5V V GS = 0, –5 V 20 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.67 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2204 L , 2SK2204 S Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2205 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • Low drive current 2 • High speed switching • 4 V gate drive device can be driven from 1. Gate 5 V source 1 2. Drain 1 • Suitable for DC – DC converter, Motor control 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 45 A ——————————————————————————————————————————— Drain peak current ID* 180 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 45 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2205 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.011 0.015 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.016 0.022 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 23 38 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 400 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 435 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 45 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 75 — ns IF = 45 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK2204. 2

2SK2205 Power vs. Temperature Derating 120 Pch (W) 90 Channel Dissipation 60 30 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2206 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • Low drive current 2 • High speed switching 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for DC – DC converter, Motor control 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 45 A ——————————————————————————————————————————— Drain peak current ID* 180 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 45 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2206 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.011 0.015 Ω ID = 25 A resistance VGS = 10 V * ———————————————————————— — 0.016 0.022 Ω ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 23 38 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 2000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 400 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 435 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 45 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 75 — ns IF = 45 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK2204. 2

2SK2206 Power vs. Temperature Derating Maximum Safe Operation Area 40 500 200 10 µs Pch (W) 10 I D (A) 100 0µ 30 s 50 PW 1m =1 s 0m Channel Dissipation Drain Current DC 20 Op s( 20 era 1s tio ho 10 Operation in n( t) Tc 5 this area is =2 limited by R DS(on) 5° 10 C) 2 1 Ta = 25 °C 0.5 0 50 100 150 200 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 3.57 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 e PW 0.0 1 uls tp ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2212 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter,Motor Control 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2212 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.24 0.3 Ω ID = 5 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6 — S ID = 5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1000 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 360 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 65 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 18 — ns ID = 5 A ———————————————————————————————— Rise time tr — 80 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 6Ω ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 190 — ns IF = 10 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2212 Power vs. Temperature Derating Maximum Safe Operation Area 40 50 10 10 µs 20 0 Pch (W) PW µs I D (A) 10 = 1 30 10 m D C s 5 m O s pe (1 ra Channel Dissipation sh Drain Current tio 2 Operation in ot n 20 ) (T this area is c 1 = limited by R DS(on) 25 °C 0.5 ) 10 0.2 0.1 Ta = 25 °C 0.05 0 50 100 150 200 0.5 1 2 5 10 20 50 100 200 500 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 10 V V DS = 10 V Pulse Test 16 6V I D (A) 8 (A) ID 12 5.5 V 6 Drain Current Drain Current Tc = 75°C 25°C 8 5V 4 –25°C 4.5 V 4 2 VGS = 3.5 V 4V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2212 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 5 10 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 5 4 2 3 Drain to Source Voltage I D = 10 A 1 2 0.5 5A VGS = 10 V 1 0.2 2A 15 V 0.1 0 4 8 12 16 20 0.5 1 2 5 10 20 50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 1.0 R DS(on) ( Ω) V GS = 10 V Tc = –25 °C Pulse Test 5 0.8 25 °C 75 °C 2 0.6 1 I D = 10 A 0.4 5A 0.5 2A 0.2 0.2 V DS = 10 V Pulse Test 0 0.1 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2212 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 5000 Reverse Recovery Time trr (ns) 200 Ciss Capacitance C (pF) 1000 100 Coss 50 100 20 Crss 10 di / dt = 100 A / µs VGS = 0 10 V GS = 0, Ta = 25 °C f = 1 MHz 5 5 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 500 20 500 V GS (V) V DS (V) 400 16 200 Switching Time t (ns) V DD = 50 V 100 V VGS 150 V 100 t d(off) Gate to Source Voltage Drain to Source Voltage 300 12 50 tf I D = 15 A 200 8 tr VDS t d(on) 20 100 V DD = 150 V 4 100 V 10 V GS = 10 V, V DD = 30 V 50 V PW = 5 µs, duty < 1 % 0 5 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2212 Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 V GS = 0, –5 V 8 5V 4 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.03 T 0.02 0.0 1 lse PW pu h ot T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2212 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2220, 2SK2221 Silicon N Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response 3 • High speed switching • Wide area of safe operation • Enhancement–mode 1 1. Gate • Good complementary characteristics 2. Source 1 • Equipped with gate protection diodes 2 3. Drain 3 Table 1 Ordering Information 2 Type No. VDSS ———————————————————— 2SK2220 180 V ———————————————————— 2SK2221 200 V ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage 2SK2220 VDSX 180 V ———— ——— 2SK2221 200 ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch* 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * Value at Tc = 25 °C 1

2SK2220, 2SK2221 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source 2SK2220 V(BR)DSX 180 — — V ID = 10 mA, VGS = –10 V breakdown voltage ———— —————————— 2SK2221 200 — — ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V ID = 100 mA VDS = 10 V ——————————————————————————————————————————— Drain to source saturation VDS(sat) — — 12 V ID = 8 A, VGD = 0 V* voltage ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 600 — pF VGS = –5 V ———————————————————————————————— Output capacitance Coss — 800 — pF VDS = 10 V ———————————————————————————————— Reverse transfer capacitance Crss — 8 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 250 — ns VDD = 30 V ———————————————————————————————— Turn–off time toff — 90 — ns ID = 4 A ——————————————————————————————————————————— * Pulse Test 2

2SK2220, 2SK2221 Power vs. Temperature Derating 150 Pch (W) 100 Channel Dissipation 50 0 50 100 150 Case Temperature Tc (°C) 3

2SK2220, 2SK2221 4

2SK2220, 2SK2221 5

2SK2225 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching 2 • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 1 3. Source 2 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 7 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2225 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 500 µA VDS =1200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 9 12 Ω ID = 1 A resistance VGS = 15 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 990 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 125 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns ID = 1 A ———————————————————————————————— Rise time tr — 50 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 30 Ω ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 2 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1750 — ns IF = 20 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2225 Power vs. Temperature Derating Maximum Safe Operation Area 80 10 10 µs Pch (W) 3 10 I D (A) PW 0 60 1 µs = m 1 10 s D m C s Channel Dissipation O Drain Current (1 pe 40 0.3 sh ra ot tio ) n (T 0.1 Operation in c this area is = 25 20 limited by R DS(on) °C 0.03 ) Ta = 25 °C 0.01 0 50 100 150 200 10 30 100 300 1000 3000 10000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 5 2.0 15 V 10 V 8V Pulse Test V DS = 25 V 4 1.6 I D (A) (A) Pulse Test 7V ID 3 1.2 Drain Current Drain Current 6V 2 0.8 Tc = 75 °C 5V 25 °C 1 0.4 –25 °C VGS = 4 V 0 20 40 60 80 100 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2225 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 50 50 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 40 20 VGS = 10 V I D= 3 A 10 15 V 30 5 2A 20 2 1A Pulse Test 10 1 0.5 A 0.5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 20 R DS(on) ( Ω) 5 V DS = 25 V I D= 2 A 16 Pulse Test 2 Tc = –25 °C 12 25 °C 0.5 A, 1 A 1 75 °C 8 0.5 4 VGS = 15 V 0.2 Pulse Test 0 0.1 –40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2225 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5000 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz Capacitance C (pF) 2000 Ciss 1000 1000 500 di / dt = 100 A / µs, Ta = 25 °C 100 Coss 200 V GS = 0, Pulse Test Crss 100 50 10 0.05 0.1 0.2 0.5 1 2 5 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 1000 V GS (V) V DS (V) V GS = 10 V V DD = 250 V 500 PW = 2 µs 800 16 duty < 1 % Switching Time t (ns) 400 V t d(off) 600 V VGS VDS 200 Gate to Source Voltage Drain to Source Voltage 600 12 100 tf 400 8 50 tr V DD = 250 V 200 4 t d(on) 400 V I D = 2.5 A 20 600 V 0 10 0 20 40 60 80 100 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2225 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4 3 2 1 10 V, 15 V V GS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 2.50 °C/W, Tc = 25 °C 0.05 PW 0.02 PDM D= T 0.03 0.01 lse PW u tp ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2225 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2247 Silicon N Channel MOS FET Application UPAK High speed power switching Features 1 2 3 • Low on–resistance • High speed switching 4 • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. 2, 4 • Suitable for DC – DC converter, motor drive, 1. Gate power switch, solenoid drive 2. Drain 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** When using the alumina ceramic board (12.5 × 20 × 0.7mm) *** Marking is “QY” 1

2SK2247 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 1 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±10 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 1 µA VDS = 24 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 1.5 2.0 V ID = 100 µA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.45 Ω ID = 1 A resistance VGS = 4 V * ———————————————————————— — 0.22 0.35 Ω ID = 1 A VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 1.9 — S ID = 1 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 177 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 116 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 43 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = 1 A ———————————————————————————————— Rise time tr — 14 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 37 — ns RL = 30 Ω ———————————————————————————————— Fall time tf — 33 — ns PW = 2 µs ——————————————————————————————————————————— * Pulse Test 2

2SK2247 Power vs. Temperature Derating Maximum Safe Operation Area 1.6 10 Channel Dissipation Pch** (W) (** on the almina ceramic board) 3 I D (A) 1 PW m 1.2 s = 10 1 m D s C (1 Drain Current O sh pe 0.8 0.3 ot Operation in ra ) tio this area is n limited by R DS(on) 0.1 0.4 0.03 Ta = 25 °C 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 5.5 V 5V Ta = 25 °C Pulse Test V DS = 10 V 4 4.5 V 4 Pulse Test I D (A) (A) 4V ID 3 3 Drain Current Drain Current 2 3.5 V 2 1 1 75 °C 3V Ta = –25 °C V GS = 2.5 V 25 °C 0 1 2 3 4 5 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2247 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 0.5 10 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Ta = 25 °C Ta = 25 °C 5 Pulse Test 0.4 2 0.3 1 0.2 I D= 2 A 0.5 VGS = 4 V 1A 0.1 0.5 A 0.2 10 V 0.1 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 1.0 R DS(on) ( Ω) 5 0.8 Ta = –25 °C 2 0.6 I D= 2 A 1 75 °C 1A 25 °C 0.4 VGS = 4 V 0.5 0.5 A 0.2 0.5, 1, 2 A 0.2 V DS = 10 V 10 V Pulse Test 0 0.1 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2247 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 200 1000 100 Switching Time t (ns) Capacitance C (pF) Ciss t d(off) 50 100 Coss tf 20 Crss 10 tr 10 5 t d(on) VGS = 0 V GS = 10 V, PW = 2 µs f = 1 MHz V DD = 30 V, duty < 1 % 1 2 0 0.05 0.1 0.2 0.5 1 2 5 10 20 30 40 50 Drain Current I D (A) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Souece to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4 3 10 V 2 5V V GS = 0 1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 5

2SK2278 L , 2SK2278 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching 4 Features 1 2 • High breakdown voltage (VDSS = 1500 V) 3 • High speed switching 2, 4 • No secondary breakdown • Suitable for Switching regulator, DC – DC 1 1 2 converter 3 1. Gate 2. Drain 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 7 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2278 L , 2SK2278 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 500 µA VDS = 1200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 9 12 Ω ID = 2 A resistance VGS = 15 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 990 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 125 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns ID = 2 A ———————————————————————————————— Rise time tr — 70 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 110 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 2 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 1750 — µs IF = 2 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1317. 2

2SK2278 L , 2SK2278 S Power vs. Temperature Derating 120 Pch (W) 80 Channel Dissipation 40 0 50 100 150 Case Temperature Tc (°C) 3

2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features 1 2 3 • Low on–resistance • High speed switching 4 • Low drive current • 2.5 V gate drive device - - - can be driven from 3 V source. 2, 4 • Suitable for DC – DC converter, motor drive, 1. Gate power switch, solenoid drive 2. Drain 1 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* ±4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the alumina ceramic board (12.5 × 20 × 0.7mm) *** Marking is “TY” 1

2SK2315 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±5 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 5 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.6 Ω ID = 0.3 A resistance VGS = 3 V * ———————————————————————— — 0.35 0.45 Ω ID = 1 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 1.8 — S ID = 1 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 173 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 85 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 23 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 21 — ns ID = 1 A, RL = 30 Ω ———————————————————————————————— Turn–off time toff — 85 — ns VGS = 10 V ——————————————————————————————————————————— * Pulse Test 2

2SK2315 Power vs. Temperature Derating Maximum Safe Operation Area 1.6 5 100 µs Channel Dissipation Pch** (W) (** on the almina ceramic board) 2 PW 1 m I D (A) 1 = s 1.2 10 0.5 m s D C Drain Current 0.2 O 0.8 pe 0.1 Operation in ra this area is t io n 0.05 limited by R DS(on) 0.4 0.02 Ta = 25 °C 0.01 1 shot pulse 0.005 0 50 100 150 200 0.2 0.5 1 2 5 10 20 50 100 200 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V Ta = 25 °C 5V 4V Pulse Test 4 (A) 4 I D (A) 3.5 V 3V Tc = 75 °C 25 °C ID 3 3 –25 °C Drain Current Drain Current 2.5 V 2 2 1 2V 1 V DS = 10 V Pulse Test V GS = 1.5 V 0 0 1 2 3 4 5 2 4 6 8 10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SK2315 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 1.0 5 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Ta = 25 °C Ta = 25 °C 0.8 2 Pulse Test 1 0.6 I D= 2 A 0.5 VGS = 3 V 0.4 10 V 1A 0.2 0.2 0.1 0.5 A 0.05 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 1.0 R DS(on) ( Ω) 5 Tc = –25 °C 0.8 25 °C I D= 2 A 2 75 °C 0.6 VGS = 3 V 1 0.5 A 1A 0.4 0.5 1A 0.5 A V DS = 10 V 0.2 I D= 2 A VGS = 10 V 0.2 Pulse Test 0 0.1 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2315 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 1000 100 20 V GS (V) V DS (V) VGS V DD = 50 V 80 16 Capacitance C (pF) Ciss 25 V 10 V 100 Gate to Source Voltage Drain to Source Voltage Coss 60 12 VDS Crss 40 I D= 2 A 8 10 VGS = 0 20 V DD = 50 V 4 f = 1 MHz 25 V 10 V 0 1 0 10 20 30 40 50 0 2 4 6 8 10 Gate Charge Qg (nc) Drain to Source Voltage V DS (V) Reverse Drain Current vs. Switching Characteristics Souece to Drain Voltage 200 5 Pulse Test 100 Reverse Drain Current I DR (A) Switching Time t (ns) t d(off) 4 50 tf 3 20 tr 10 V 10 t d(on) 2 5V 5 V GS = 0 V GS = 10 V, PW = 2 µs 1 V DD = 30 V, duty < 1 % 2 0.05 0.1 0.2 0.5 1 2 5 0 0.4 0.8 1.2 1.6 2.0 Drain Current I D (A) Source to Drain Voltage V SD (V) 5

2SK2322 L , 2SK2322 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 1 2 • Low drive current 3 • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche ratings 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Avalanche current IAP*** 15 A ——————————————————————————————————————————— Avalanche energy EAR*** 19 mJ ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2322 L , 2SK2322 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.04 0.05 Ω ID = 8 A resistance VGS = 10 V * ———————————————————————— — 0.08 0.15 Ω ID = 3 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 14 — S ID = 8 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1600 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 120 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 8 A ———————————————————————————————— Rise time tr — 190 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 130 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 85 — ns IF = 15 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2322 L , 2SK2322 S Power vs. Temperature Derating Maximum Safe Operation Area 80 500 200 Pch (W) I D (A) 60 100 10 µs 50 10 0µ s Channel Dissipation Drain Current 20 PW 1m 40 DC =1 s 10 Op 0m era s( Operation in tio 1s 5 this area is n( ho Tc t) 20 limited by R DS(on) = 25 2 °C ) 1 Ta = 25 °C 0.5 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 3V V DS = 10 V 10 V Pulse Test 16 5V 16 I D (A) (A) Pulse Test ID 12 12 Drain Current Drain Current 2.5 V 8 8 Tc = 75°C 25°C 4 –25°C 2V 4 VGS = 1.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2322 L , 2SK2322 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.8 0.2 Drain to Source Voltage 0.6 VGS = 4 V I D = 10 A 0.1 0.4 10 V 0.05 5A 0.2 0.02 2A 0.01 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.2 V DS = 10 V R DS(on) ( Ω) Pulse Test Pulse Test 20 0.16 ID=5A 10 Tc = –25 °C 0.12 25 °C V GS = 2.5 V 5 2A 0.08 75 °C 2 A, 5 A, 10 A 2 4V 0.04 2 A, 5 A, 10 A 1 10 V 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2322 L , 2SK2322 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz Capacitance C (pF) Ciss 200 1000 Coss 100 50 100 Crss 20 di/dt = 50 A/µs V GS = 0, Ta = 25°C 10 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 10 V, V DD = 30 V V GS (V) V DS (V) 500 PW = 5 µs, duty < 1 % 80 V DD = 10 V 16 Switching Time t (ns) t d(off) 25 V 50 V 200 Gate to Source Voltage Drain to Source Voltage 60 VGS 12 VDS 100 tf 40 8 50 I D = 15 A tr 20 V DD = 50 V 4 20 t d(on) 25 V 10 V 10 0 0 20 40 60 80 100 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2322 L , 2SK2322 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 20 20 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 15 A Reverse Drain Current I DR (A) 16 16 V DD = 25 V 10 V duty < 0.1 % 5V Rg > 50 Ω 12 12 V GS = 0, –5 V 8 8 4 4 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2322 L , 2SK2322 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 2.5 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2328 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • Low on–resistance • High speed switching • Low drive current • No secondary breakdown 1 • Suitable for switchingregulator, DC–DC 2 3 converter 2 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 650 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2328 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 650 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 550 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.0 1.4 Ω ID = 4A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1180 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 265 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 50 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 105 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 420 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1403A 2

2SK2328 Power vs. Temperature Derating Maximum Safe Operation Area 100 50 20 10 Pch (W) I D (A) µs 10 10 75 0 PW µs 5 1 m = s D Channel Dissipation 10 Drain Current C 2 m O 50 pe s (1 ra 1 sh tio n ot Operation in (T 0.5 ) this area is c = limited by R DS(on) 25 25 0.2 °C ) 0.1 Ta = 25 °C 0.05 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.67 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2329 L , 2SK2329 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 5 A resistance VGS = 4 V * ———————————————————————— — 0.04 0.06 Ω ID = 5 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 18 — S ID = 5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1250 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 540 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 120 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 5 A ———————————————————————————————— Rise time tr — 145 — ns VGS = 4 V ———————————————————————————————— Turn–off delay time td(off) — 225 — ns RL = 2 Ω ———————————————————————————————— Fall time tf — 125 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = 10 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2329 L , 2SK2329 S Power vs. Temperature Derating Maximum Safe Operation Area 40 100 50 10 µs Pch (W) I D (A) 10 20 0µ 30 PW 1m s 10 DC =1 s Op 0m era s( Drain Current 5 Channel Dissipation Operation in tio 1s n( ho 20 this area is Tc t) 2 limited by R DS(on) =2 5° C) 1 10 0.5 0.2 Ta = 25 °C 0.1 0 50 100 150 200 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 5V V DS = 10 V 4V 16 2.5 V 2V Pulse Test I D (A) 16 (A) ID 12 12 Drain Current Drain Current 8 Tc = 75°C 8 25°C 4 VGS = 1.5 V 4 –25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2329 L , 2SK2329 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.8 0.2 Drain to Source Voltage 0.6 0.1 0.4 0.05 VGS = 2.5 V I D = 10 A 0.2 5A 4V 0.02 2A 0.01 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.10 R DS(on) ( Ω) Pulse Test 20 Tc = –25 °C 0.08 I D = 2 A, 5 A, 10 A 10 25 °C 0.06 5 75 °C 2.5 V 0.04 2 2 A, 5 A, 10 A 0.02 V GS = 4 V 1 V DS = 10 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2329 L , 2SK2329 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 5000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz 2000 Capacitance C (pF) Ciss 200 1000 100 500 Coss 50 200 100 Crss 20 di/dt = 20 A/µs V GS = 0, Ta = 25°C 10 50 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 4 V, V DD = 10 V V GS (V) V DS (V) 500 PW = 3 µs, duty < 1 % 80 16 Switching Time t (ns) t d(off) V DD = 10 V 25 V 200 Gate to Source Voltage Drain to Source Voltage 60 12 tf V GS 100 I D = 10 A tr 40 8 50 V DS t d(on) 20 4 20 V DD = 25 V 10 V 10 0 0 20 40 60 80 100 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2329 L , 2SK2329 S Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 V GS = 0, –5 V 8 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2329 L , 2SK2329 S Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 4V = 10 V 90% 90% td(on) tr td(off) tf 7

2SK2330 L , 2SK2330 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching 4 Features 1 2 • Low on–resistance 3 • High speed switching 2, 4 • No secondary breakdown • Suitable for Switching regulator, DC – DC 1 1 2 converter 3 1. Gate 2. Drain 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2330 L , 2SK2330 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.3 0.4 Ω ID = 8 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 13 — S ID = 8 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2050 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 75 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 8 A ———————————————————————————————— Rise time tr — 110 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 15 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 500 — µs IF = 15 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1168. 2

2SK2334 L , 2SK2334 S Silicon N Channel MOS FET Application DPAK–2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 12 • Low drive current 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain 3. Source • Avalanche Ratings 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Avalanche current IAP*** 20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2334 L , 2SK2334 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.04 0.055 Ω ID = 10 A resistance VGS = 10 V * ———————————————————————— — 0.055 0.07 Ω ID = 10 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 9 15 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 980 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 135 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 14 — ns ID = 10 A ———————————————————————————————— Rise time tr — 90 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 180 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 125 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — µs IF = 20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2334 L , 2SK2334 S Power vs. Temperature Derating Maximum Safe Operation Area 40 200 100 Pch (W) 10 I D (A) 50 µs 30 10 20 0µ PW 1m s 10 DC =1 Channel Dissipation s Drain Current Op 0m 20 era s( 5 Operation in tio n( 1s Tc ho this area is =2 t) 2 limited by R DS(on) 5° C) 10 1 0.5 Ta = 25 °C 0.2 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 50 20 10 V 5V Pulse Test V DS = 10 V 6V Pulse Test 40 4.5 V 16 I D (A) (A) 4V ID 30 12 Drain Current Drain Current 3.5 V 20 8 Tc = 75°C 3V 25°C 10 4 2.5 V –25°C VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2334 L , 2SK2334 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.8 I D = 15 A 0.2 Drain to Source Voltage 0.6 0.1 10 A VGS = 4 V 0.4 0.05 10 V 5A 0.2 0.02 0.01 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 0.1 R DS(on) ( Ω) Pulse Test I D = 10 A 0.08 20 Tc = –25 °C 2 A, 5 A 25 °C 10 V GS = 4 V 75 °C 0.06 5 2 A, 5 A, 10 A 0.04 10 V 2 0.02 1 V DS = 10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2334 L , 2SK2334 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 50 100 Crss 20 30 di/dt = 50 A/µs V GS = 0, Ta = 25°C 10 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 10 V, V DD = 30 V V GS (V) V DS (V) 500 PW = 5 µs, duty < 1 % 80 16 Switching Time t (ns) V DD = 10 V t d(off) VGS 200 25 V Gate to Source Voltage Drain to Source Voltage 60 50 V 12 VDS tf 100 40 8 50 I D = 20 A tr 20 V DD = 50 V 4 20 t d(on) 25 V 10 V 10 0 0 20 40 60 80 100 0.3 1 3 10 30 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2334 L , 2SK2334 S Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 20 40 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 20 A Reverse Drain Current I DR (A) 16 32 V DD = 25 V duty < 0.1 % Rg > 50 Ω 12 24 10 V 8 5V 16 V GS = 0, –5 V 4 8 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2334 L , 2SK2334 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 4.17 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2345 Silicon N Channel MOS FET Application TO-220FM High speed power switching Features • Low on–resistance • High speed switching • Low drive current • No secondary breakdown 12 • Suitable for switchingregulator, DC–DC 3 converter 2 1. Gate 2. Drain 1 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 350 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 6 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 24 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 6 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2345 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 350 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 350 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.6 0.8 Ω ID = 3 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.5 4.5 — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 635 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 230 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 3 A ———————————————————————————————— Rise time tr — 40 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 60 — ns RL = 10 Ω ———————————————————————————————— Fall time tf — 35 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 6 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 230 — ns IF = 6 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1400A. 2

2SK2345 Power vs. Temperature Derating Maximum Safe Operation Area 40 50 10 20 Pch (W) 10 µs I D (A) 10 0 30 µs PW 5 D 1 C = m O 10 s Channel Dissipation pe Drain Current 2 ra m 20 tio s n (1 1 Operation in (T sh this area is c ot limited by R DS(on) = 25 ) 0.5 °C 10 ) 0.2 0.1 Ta = 25 °C 0.05 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 3.57 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.03 T 0.02 0.0 1 lse PW t pu ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2346 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Avalanche current IAP*** 20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2346 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.036 0.05 Ω ID = 10 A resistance VGS = 10 V * ———————————————————————— — 0.05 0.07 Ω ID = 10 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 17 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1130 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 520 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 10 A ———————————————————————————————— Rise time tr — 90 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 185 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 125 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 125 — ns IF = 20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2346 Power vs. Temperature Derating Maximum Safe Operation Area 40 200 100 10 Pch (W) µs I D (A) 50 10 30 0µ PW s 20 1m =1 s 10 DC 0m Channel Dissipation Drain Current Op s( 20 er 1s 5 ati ho on t) Operation in (T this area is c= 2 25 limited by R DS(on) °C ) 10 1 0.5 Ta = 25 °C 0.2 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V Pulse Test V DS = 10 V 8V Pulse Test 16 4V 16 I D (A) (A) 3.5 V 3V ID 12 12 Drain Current Drain Current 8 8 Tc = 75°C 2.5 V 25°C 4 4 –25°C VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2346 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.8 0.2 Drain to Source Voltage 0.6 I D = 15 A 0.1 0.4 VGS = 4 V 10 A 0.05 0.2 5A 10 V 0.02 0.01 0 4 8 12 16 20 0.1 0.3 1 3 10 30 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.2 R DS(on) ( Ω) Pulse Test 20 0.16 10 Tc = –25 °C 0.12 25 °C I D = 15 A 5 75 °C 5 A, 10 A 0.08 V GS = 4 V 2 0.04 5 A, 10 A, 15 A 1 V DS = 10 V 10 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2346 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz 3000 Capacitance C (pF) Ciss 1000 200 Coss 100 300 Crss 50 100 20 30 di/dt = 50 A/µs V GS = 0, Ta = 25°C 10 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 10 V, V DD = 30 V V GS (V) V DS (V) 500 PW = 5 µs, duty < 1 % 80 16 Switching Time t (ns) V DD = 10 V t d(off) 25 V 50 V 200 Gate to Source Voltage Drain to Source Voltage 60 VGS 12 VDS 100 tf 40 I D = 20 A 8 50 tr 20 V DD = 50 V 4 20 t d(on) 25 V 10 V 10 0 0 20 40 60 80 100 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2346 Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 20 40 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 20 A Reverse Drain Current I DR (A) 16 32 V DD = 25 V 10 V duty < 0.1 % 5V Rg > 50 Ω 12 24 V GS = 0, –5 V 8 16 4 8 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2346 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 5.0 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.03 T 0.02 1 e 0.0 uls PW tp ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2373 Silicon N Channel MOS FET Application MPAK Low frequency power switching 3 1 Features 2 • Low on–resistance • Small package • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for low signal load switch D G 1. Source 2. Gate 3. Drain S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 0.2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 0.4 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 0.2 A ——————————————————————————————————————————— Channel dissipation Pch** 150 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 100 µs, duty cycle ≤ 10 % ** Marking is “ZE–”. 1

2SK2373 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 100 µA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±2 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 10 µA, VDS = 5 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.4 2.5 Ω ID = 20 mA resistance VGS = 4 V * ———————————————————————— — 1.0 1.4 Ω ID = 10 mA VGS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 17.8 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 25.4 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 3.7 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 50 — ns ID = 0.1 A ———————————————————————————————— Rise time tr — 125 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 660 — ns RL = 100 Ω ———————————————————————————————— Fall time tf — 400 — ns PW = 2 µs ——————————————————————————————————————————— * Pulse Test 2

2SK2373 Maximum Channel Dissipation Curve Maximum Safe Operation Area Pch (mW) 200 1 1 ms 0.3 I D (A) PW0 m 150 1 = Channel Power Dissipation 0.1 s D Drain Current C O 100 0.03 pe ra Operation in tio n 0.01 this area is limited by R DS(on) 50 0.003 Ta = 25 °C 0.001 1 shot pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 2.0 0.5 Pulse Test 5V V DS = 10 V 1.6 0.4 I D (A) (A) 4.5 V ID 1.2 0.3 75 °C Drain Current Drain Current 4V 25 °C 0.8 0.2 3.5 V Ta = –25 °C 0.4 3V 0.1 VGS = 2.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2373 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 10 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Ta = 25 °C 5 Pulse Test 0.4 2 0.3 VGS = 4 V 1 10 V 0.2 0.2 A 0.5 0.1 0.1 A 0.2 I D = 0.05 A 0.1 0 4 8 12 16 20 0.01 0.02 0.05 0.1 0.2 0.5 1 Gate to Source Voltage V GS (V) Drain Current I D (A) Forward Transfer Admittance vs. Typical Capacitance vs. Drain Current Drain to Source Voltage 1 100 Forward Transfer Admittance |yfs| (S) 0.5 Ta = –25 °C 30 Ciss Capacitance C (pF) 10 Coss 0.2 75 °C 25 °C Crss 0.1 3 0.05 1 0.02 V DS = 10 V 0.3 VGS = 0 Pulse Test f = 1 MHz 0.01 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 0 10 20 30 40 50 Drain Current I D (A) Drain to Source Voltage V DS (V) 4

2SK2373 Reverse Drain Current vs. Souece to Drain Voltage 0.5 Pulse Test Reverse Drain Current I DR (A) 0.4 0.3 10 V 5V V GS = 0 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 5

2SK2390 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 12 • 4 V gate drive device can be driven from 3 5 V source 1 • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche ratings 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Avalanche current IAP*** 12 A ——————————————————————————————————————————— Avalanche energy EAR*** 12 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 1

2SK2390 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.09 Ω ID = 6 A resistance VGS = 10 V * ———————————————————————— — 0.11 0.15 Ω ID = 6 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 8 — S ID = 6 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 240 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 6 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 5 Ω ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.05 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 95 — ns IF = 12 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2390 Power vs. Temperature Derating Maximum Safe Operation Area 40 200 100 Pch (W) I D (A) 50 10 30 µs 10 20 0µ PW 1m s Channel Dissipation 10 =1 Drain Current DC 0m s 20 Op s( 5 era 1s Operation in tio n( ho Tc t) 2 this area is =2 limited by R DS(on) 5° 10 1 C) 0.5 Ta = 25 °C 0.2 0 50 100 150 200 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 6V Pulse Test V DS = 10 V 5V Pulse Test 4V 16 16 I D (A) (A) ID 12 3.5 V 12 Drain Current Drain Current 8 3V 8 Tc = 75°C 4 2.5 V –25°C 4 25°C VGS = 2 V 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2390 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 2.0 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 1.6 I D = 15 A 0.2 Drain to Source Voltage 1.2 VGS = 4 V 0.1 10 A 0.8 10 V 0.05 5A 0.4 0.02 0.01 0 2 4 6 8 10 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.5 R DS(on) ( Ω) Pulse Test 10 0.4 Tc = –25 °C I D = 15 A 5 75 °C 0.3 25 °C 10 A 2 V GS = 4 V 0.2 5A 1 0.5 0.1 5 A, 10 A, 15 A V DS = 10 V 10 V Pulse Test 0 0.2 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2390 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 1000 Reverse Recovery Time trr (ns) 500 Ciss Capacitance C (pF) 200 100 200 Coss 50 100 50 Crss 20 10 20 VGS = 0 di/dt = 50 A/µs f = 1 MHz V GS = 0, Ta = 25°C 5 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 500 V GS (V) V GS = 10 V, V DD = 30 V V DS (V) PW = 5 µs, duty < 1 % 80 V 16 200 Switching Time t (ns) DD = 10 V t d(off) 25 V 50 V VGS 100 Gate to Source Voltage Drain to Source Voltage 60 12 tf VDS 50 40 I D = 15 A 8 tr 20 t d(on) 20 V DD = 50 V 4 10 25 V 10 V 0 5 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2390 Reverse Drain Current vs. Maximun Avalanche Energy vs. Souece to Drain Voltage Channel Temperature Derating 20 20 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 12 A Reverse Drain Current I DR (A) 16 16 V DD = 25 V duty < 0.1 % Rg > 50 Ω 12 12 10 V 8 5V 8 V GS = 0, –5 V 4 4 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω –15 V VDD 0 6

2SK2390 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.03 T 0.02 1 e 0.0 uls PW tp ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2393 Silicon N Channel MOS FET Application TO–3PL High voltage / High speed power switching Features • Low on–resistance, High breakdown voltage • High speed switching 2 • Low Drive Current • No Secondary Breakdown • Suitable for Switching regulator, 1 Motor Control 1. Gate 2. Drain 1 2 3. Source 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 200 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2393 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0* voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 500 µA VDS = 1200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 1.9 2.8 Ω ID = 4 A resistance VGS = 15 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.8 3.0 — S ID = 4 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 4370 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 560 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 200 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 75 — ns ID = 4 A ———————————————————————————————— Rise time tr — 180 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 260 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 125 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 6.5 — µs IF = 8 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2393 Power vs. Temperature Derating Maximum Safe Operation Area 400 100 Pch (W) 30 I D (A) 300 10 10 µs 10 0µ s PW 1m Channel Dissipation Drain Current DC =1 s 200 3 Op 0m era s( Operation in tio 1s n( ho 1 this area is Tc t) limited by R DS(on) =2 100 5° C) 0.3 0.1 Ta = 25 °C 0 50 100 150 200 20 50 100 200 500 1000 2000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 5 Pulse Test V DS = 10 V 15 V 10 V Pulse Test 8 4 I D (A) (A) 8V 7V ID 6 3 Drain Current Drain Current 4 2 6V Tc = 75°C 25°C 2 –25°C 1 VGS = 5 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2393 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 20 20 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 10 16 5 Drain to Source Voltage 12 VGS = 10 V ID=5A 2 15 V 8 1 4 2A 0.5 1A 0.2 0 4 8 12 16 20 0.1 0.3 1 3 10 30 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 10 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 5 R DS(on) ( Ω) Pulse Test ID=5A 5 2A 4 Tc = –25 °C 1A 2 3 25 °C V GS = 15 V 1 75 °C 2 0.5 1 0.2 V DS = 20 V Pulse Test 0 0.1 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2393 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Ciss Reverse Recovery Time trr (ns) 3000 Capacitance C (pF) 200 1000 100 Coss 50 300 Crss 100 20 10 30 VGS = 0 di/dt = 100 A/µs V GS = 0, Ta = 25°C f = 1 MHz 5 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 2000 V GS = 10 V, V DD = 30 V V GS (V) ID=8A V DS (V) 1000 PW = 5 µs, duty < 1 % 800 16 Switching Time t (ns) V DD = 250 V 500 400 V t d(off) VDS Gate to Source Voltage Drain to Source Voltage 600 600 V VGS 12 tf 200 400 8 100 tr 50 t d(on) 200 V DD = 250 V 4 400 V 600 V 0 20 0 40 80 120 160 200 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2393 Reverse Drain Current vs. Souece to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 10 V 8 5V 6 V GS = 0, –5 V 4 2 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 6

2SK2408 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • Low on–resistance • Built-in fast recovery diode (trr = 120 ns typ) 1 • High speed switching 2 3 • Low drive current • No secondary breakdown 2 • Suitable for switching regulator, Motor control 1 1. Gate 1. Gate 2. Drain (Flange) 2. Drain (Flange) 3. Source 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 21 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 60 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2408 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.7 0.9 Ω ID = 4A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1100 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 310 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 50 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 48 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1516 2

2SK2408 Power vs. Temperature Derating Maximum Safe Operation Area 80 50 20 10 Pch (W) 10 µs I D (A) 10 0 µs PW 60 D C 1 m O s = 5 pe 10 ra m tio Channel Dissipation Drain Current 2 s n (1 40 (T sh Operation in c 1 = ot this area is 25 ) limited by R DS(on) °C 0.5 ) 20 0.2 0.1 Ta = 25 °C 0.05 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 2.08 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2418 L , 2SK2418 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 • Low on–resistance • High speed switching 2, 4 • Low drive current 12 3 • 2.5 V gate drive device can be driven from 1 3 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2418 L , 2SK2418 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 16 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.04 0.05 Ω ID = 4 A resistance VGS = 4 V * ———————————————————————— — 0.05 0.07 Ω ID = 4 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 810 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 4 A ———————————————————————————————— Rise time tr — 90 — ns VGS = 4 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 2.5 Ω ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 60 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2418 L , 2SK2418 S Power vs. Temperature Derating Maximum Safe Operation Area 40 50 10 µs Pch (W) 10 I D (A) 20 0 30 µs 10 PW 1 = m Channel Dissipation Drain Current 10 s 5 D 20 m C s O Operation in (1 pe sh ra this area is ot tio 2 limited by R DS(on) ) n (T 10 c = 25 1 °C ) Ta = 25 °C 0.5 0 50 100 150 200 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V Pulse Test V DS = 10 V 6V 4V Pulse Test 16 16 I D (A) (A) 2.5 V 2V ID 12 12 Drain Current Drain Current 8 8 VGS = 1.5 V 4 4 Tc = 75°C –25°C 25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

2SK2418 L , 2SK2418 S Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 0.5 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.4 0.2 0.1 Drain to Source Voltage 0.3 VGS = 2.5 V 0.05 0.2 ID=5A 4V 0.02 0.1 2A 0.01 1A 0.005 0 2 4 6 8 10 0.1 0.3 1 3 10 30 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.1 R DS(on) ( Ω) Pulse Test 20 Tc = –25 °C 0.08 I D = 1 A, 2 A, 5 A 10 25 °C 0.06 V GS = 2.5 V 75 °C 5 0.04 1 A, 2 A, 5 A 2 4V 0.02 1 V DS = 10 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2418 L , 2SK2418 S Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 VGS = 0 Reverse Recovery Time trr (ns) f = 1 MHz 3000 Capacitance C (pF) 200 1000 Ciss 100 50 300 Coss 100 20 Crss 10 30 di/dt = 20 A/µs V GS = 0, Ta = 25°C 5 10 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 20 500 V GS = 4 V, V DD = 10 V V GS (V) V DS (V) ID=7A PW = 5 µs, duty < 1 % t d(off) 40 16 200 Switching Time t (ns) 100 tf Gate to Source Voltage Drain to Source Voltage 30 VGS 12 50 tr V DD = 5 V 20 10 V 8 VDS 15 V 20 t d(on) 10 V DD = 15 V 4 10 10 V 5V 5 0 0 20 40 60 80 100 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2418 L , 2SK2418 S Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 10 V 5V 12 V GS = 0, –5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 1 lse PDM D= PW 0.0 t Pu T 0.03 ho 1s PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2418 L , 2SK2418 S Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 4V = 10 V 90% 90% td(on) tr td(off) tf 7

2SK2423 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter. 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 450 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2423 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =450 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.55 0.7 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.5 7.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1150 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 340 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 330 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1159. 2

2SK2424 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 450 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2424 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =450 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.55 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 7.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 410 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 130 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 380 — ns IF = 8 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1165. 2

2SK2425 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2425 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =250 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.4 0.55 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 690 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 265 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 13 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 65 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 37 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 180 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curve of 2SK1667, 2SK1668. 2

2SK2426 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 12 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2426 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =250 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.23 0.35 Ω ID = 6 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 8.0 — S ID = 6 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1100 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 68 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 6 A ———————————————————————————————— Rise time tr — 65 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 5Ω ———————————————————————————————— Fall time tf — 44 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 200 — ns IF = 12 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curve of 2SK1761, 2SK1762. 2

2SK2431 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current • No Secondary Breakdown 12 3 • Suitable for Switching regulator, DC – DC 1 converter 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 450 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 3 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 12 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3 A ——————————————————————————————————————————— Channel dissipation Pch** 25 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2431 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =450 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 2.0 2.8 Ω ID = 2 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 2.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 330 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 90 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 15 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = 2 A ———————————————————————————————— Rise time tr — 20 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 30 — ns RL = 15Ω ———————————————————————————————— Fall time tf — 20 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 300 — ns IF = 3 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curve of 2SK1153, 2SK1862. 2

ADE–208–356 (Z) 2SK2529 Silicon N Channel MOS FET 6th. Edition Jun. 1995 Application TO–220CFM High speed power switching Features • Low on–resistance RDS(on) = 7 mΩ typ. 2 • High speed switching • 4 V gate drive device can be driven from 5 V souece 1 1 2 3 1. Gate 2. Drain 3 3. Source Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Avalanche current IAP*** 45 A ——————————————————————————————————————————— Avalanche energy EAR*** 174 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C *** Value at Tch = 25°C, Rg ≥ 50 Ω 1

2SK2529 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 7 10 mΩ ID = 25 A resistance VGS = 10 V * ———————————————————————— — 10 16 mΩ ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 35 55 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3550 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1760 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 500 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 35 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 470 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.85 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 145 — ns IF = 50 A, VGS = 0 recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2529 Power vs. Temperature Derating Maximum Safe Operation Area 40 500 10 Pch (W) 200 µs I D (A) 100 10 30 PW 0 1 µs 50 = m 10 s Channel Dissipation Drain Current m D 20 C s 20 (1 O pe sh 10 ra Operation in ot tio this area is ) n 5 (T limited by R DS(on) c = 10 25 2 °C ) 1 Ta = 25 °C 0.5 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 6 V 100 100 5V Pulse Test V DS = 10 V 4V 80 Pulse Test (A) 80 3.5 V I D (A) ID 60 60 Drain Current Drain Current 3V 40 40 25°C Tc = 75°C 20 20 VGS = 2.5 V –25°C 0 0 1 2 3 4 5 2 4 6 8 10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SK2529 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1.0 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.2 0.8 0.1 0.05 0.6 Drain to Source Voltage 0.02 VGS = 4 V 0.01 0.4 I D = 50 A 0.005 10 V 0.002 0.2 20 A 0.001 10 A 0.0005 0 6 1 3 10 30 100 300 1000 2 4 8 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 500 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.04 V DS = 10 V R DS(on) ( Ω) Pulse Test 200 Pulse Test 0.032 100 50 Tc = –25 °C 0.024 I D = 50 A 20 10 25 °C 10, 20 A 0.016 5 V GS = 4 V 75 °C 2 0.008 10, 20, 50 A 1 10 V 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2529 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5000 10000 Reverse Recovery Time trr (ns) 2000 5000 Capacitance C (pF) 1000 Ciss 500 2000 200 1000 Coss 100 500 50 20 Crss di / dt = 50 A / µs 200 VGS = 0 10 V GS = 0, Ta = 25 °C f = 1 MHz 5 100 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 5000 V GS (V) I D = 50 A V DS (V) 2000 80 16 Switching Time t (ns) 1000 t d(off) V DD = 10 V 500 tf Gate to Source Voltage 25 V Drain to Source Voltage 60 50 V 12 V DS 200 tr V GS 100 40 8 50 t d(on) 20 4 20 V DD = 50 V V GS = 10 V, V DD = 30 V 25 V 10 10 V PW = 5 µs, duty < 1 % 0 5 0 40 80 120 160 200 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2529 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating 100 200 Repetive Avalanche Energy E AR (mJ) Pulse Test I AP = 45 A Reverse Drain Current I DR (A) 80 160 V DD = 25 V duty < 0.1 % Rg > 50 Ω 10 V 60 120 5V V GS = 0, –5 V 40 80 20 40 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 3.57 °C/W, Tc = 25 °C 0.05 PW PDM D= T 0.03 0.02 e PW 0.0 1 uls tp ho T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2529 Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω 15 V VDD 0 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2529 Package Dimensions Unit : mm • TO–220CFM 10.0 ± 0.3 2.7 ± 0.2 φ 3.2 ± 0.2 15.0 ± 0.3 12.0 ± 0.3 1.0 ± 0.2 4.45 ± 0.3 1.15 ± 0.2 13.6 ± 1.0 2.5 ± 0.2 4.1 ± 0.3 0.6 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.7 ± 0.1 Hitachi Code TO–220CFM EIAJ — JEDEC — 8

2SK2553 Silicon N Channel MOS FET 7th. Edition Jun. 1995 Application LDPAK High speed power switching 4 4 Features • Low on–resistance RDS(on) = 7 mΩ typ. 2 1 2 • High speed switching 3 • 4 V gate drive device can be driven from 1 1 2 3 1. Gate 5 V souece 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 50 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 200 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 50 A ——————————————————————————————————————————— Avalanche current IAP*** 45 A ——————————————————————————————————————————— Avalanche energy EAR*** 174 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C *** Value at Tch = 25°C, Rg ≥ 50 Ω 1

2SK2553 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 7 10 mΩ ID = 25 A resistance VGS = 10 V * ———————————————————————— — 10 16 mΩ ID = 25 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 35 55 — S ID = 25 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3550 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1760 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 500 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 35 — ns ID = 25 A ———————————————————————————————— Rise time tr — 230 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 470 — ns RL = 1.2 Ω ———————————————————————————————— Fall time tf — 360 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 50 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 135 — ns IF = 50 A, VGS = 0 recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curves of 2SK2529. 2

2SK2553 Power vs. Temperature Derating Maximum Safe Operation Area 100 500 10 Pch (W) 200 µs I D (A) 100 10 75 PW 0 µs 50 = 1 10 m D s C Channel Dissipation Drain Current m O 20 s pe 50 (1 ra sh tio 10 Operation in ot n ) (T this area is c 5 = limited by R DS(on) 25 °C 25 ) 2 1 Ta = 25 °C 0.5 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.67 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2553 Package Dimensions Unit : mm • LDPAK 10.2 ± 0.3 (1.4) 4.44 ± 0.2 1.3 ± 0.2 11.3 ± 0.5 8.6 ± 0.3 10.0 +0.3 –0.5 (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 (1.5) 2.59 ± 0.2 1.2 ± 0.2 1.27 ± 0.2 8.6 ± 0.3 10.0 +0.3 –0.5 0.86 +0.2 –0.1 11.0 ± 0.5 (1.5) 0.76 ± 0.1 (1.5) 0.1 +0.2 –0.1 2.59 ± 0.2 3.0 +0.3 –0.5 1.27 ± 0.2 0.4 ± 0.1 0.4 ± 0.1 1.2 ± 0.2 0.86 +0.2 –0.1 2.54 ± 0.5 2.54 ± 0.5 2.54 ± 0.5 2.54 ± 0.5 L type S type Hitachi Code LDPAK EIAJ — JEDEC — 4

2SK2554 Silicon N Channel MOS FET 4th. Edition Feb. 1995 Target Spec. Application TO–3P High speed power switching Features • Low on–resistance S RDS(on) = 4.5 mΩ typ. 2 • High speed switching • 4 V gate drive device can be driven from 1 5 V souece G 1. Gate 1 2. Drain 2 (Flange) 3 3 3. Source D Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID** 75 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 300 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR** 75 A ——————————————————————————————————————————— Avalanche current IAP*** 50 A ——————————————————————————————————————————— Avalanche energy EAR*** 214 mJ ——————————————————————————————————————————— Channel dissipation Pch** 150 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C *** Value at Tch = 25°C, Rg ≥ 50 Ω 1

2SK2554 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 4.5 6 mΩ ID = 40 A resistance VGS = 10 V * ———————————————————————— — 5.8 10 mΩ ID = 40 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 50 80 — S ID = 40 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 7700 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 4100 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 760 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 60 — ns ID = 40 A ———————————————————————————————— Rise time tr — 420 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 1200 — ns RL = 0.75 Ω ———————————————————————————————— Fall time tf — 900 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.95 — V IF = 75 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 105 — ns IF = 75 A, VGS = 0 recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2554 Power vs. Temperature Derating Maximum Safe Operation Area 200 500 10 10 µs Pch (W) 200 0 µs I D (A) PW 1 150 100 m = s 50 10 m D s C Channel Dissipation (1 Drain Current O 20 sh pe 100 ot ra Operation in ) tio 10 n this area is (T limited by R DS(on) c 5 = 25 °C 50 ) 2 1 0.5 Ta = 25 °C 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 5 V 100 100 4V 3V V DS = 10 V 80 Pulse Test (A) 80 I D (A) Pulse Test ID 60 60 Drain Current Drain Current 40 2.5 V 40 25°C Tc = 75°C 20 20 –25°C VGS = 2 V 0 0 1 2 3 4 5 2 4 6 8 10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

2SK2554 Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 0.5 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.2 0.4 0.1 0.05 0.3 Drain to Source Voltage I D = 50 A 0.02 0.01 0.2 VGS = 4 V 0.005 10 V 0.1 20 A 0.002 10 A 0.001 0.0005 0 2 4 6 8 10 1 3 10 30 100 300 1000 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 500 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.02 V DS = 10 V R DS(on) ( Ω) Pulse Test 200 Pulse Test 0.016 100 50 Tc = –25 °C 0.012 I D = 50 A 20 10, 20 A 25 °C 10 0.008 V GS = 4 V 5 75 °C 10, 20, 50 A 2 0.004 10 V 1 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

2SK2554 Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 100000 Reverse Recovery Time trr (ns) 30000 200 Capacitance C (pF) 100 10000 Ciss 50 3000 Coss 1000 20 Crss 10 300 VGS = 0 di / dt = 50 A / µs V GS = 0, Ta = 25 °C f = 1 MHz 5 100 0.1 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 10000 I D = 75 A V GS (V) V DS (V) 3000 80 16 Switching Time t (ns) t d(off) V DD = 10 V 25 V 1000 Gate to Source Voltage Drain to Source Voltage 60 50 V 12 tf V DS 300 tr 40 V GS 8 100 t d(on) 20 V DD = 50 V 4 30 V GS = 10 V, V DD = 30 V 25 V PW = 5 µs, duty < 1 % 10 V 0 10 0 80 160 240 320 400 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current I D (A) 5

2SK2554 Reverse Drain Current vs. Maximun Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating 200 250 Repetive Avalanche Energy E AR (mJ) I AP = 50 A Reverse Drain Current I DR (A) 160 V DD = 25 V 200 duty < 0.1 % 10 V Rg > 50 Ω 120 150 5V 80 100 V GS = 0, –5 V 40 50 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 0.83 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW h o 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 6

2SK2554 Avalanche Test Circuit and Waveform VDSS 1 2 EAR = • L • I AP • L 2 VDSS – V DD V DS Monitor I AP V (BR)DSS Monitor I AP Rg D. U. T VDD V DS ID Vin 50Ω 15 V VDD 0 Switching Time Test Circuit Waveform Vin Monitor Vout Monitor 90% D.U.T. RL Vin 10% Vin V DD Vout 10% 50Ω 10% 10 V = 30 V 90% 90% td(on) tr td(off) tf 7

2SK2554 Package Dimensions Unit : mm • TO–3P φ 3.2 ± 0.2 5.0 max 5.0 ± 0.3 1.0 typ 16.0 max 1.5 typ 0.5 typ 20.1 max 14.9 ± 0.2 2.0 typ 0.3 typ 1.6 typ 2.8 typ 18.0 ± 0.5 1.4 max 2.0 typ 1.0 ± 0.2 0.6 ± 0.2 3.6 typ 0.9 typ 1.0 typ Hitachi Code TO–3P 5.45 ± 0.2 5.45 ± 0.2 EIAJ SC–65 JEDEC — 8

2SK2568 Silicon N Channel MOS FET 1st. Edition Jul. 1995 Preliminary Application TO–3P High speed power switching Features • Low on–resistance S • High speed switching 2 • Low drive current • Suitable for switching regulator and DC–DC 1 converter G 1. Gate 1 2. Source 2 (Flange) 3 3 3. Drain D Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID** 12 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 48 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR** 12 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C 1

2SK2568 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.5 0.6 Ω ID = 6 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 6.0 10 — S ID = 6 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (1560) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (450) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (72) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (22) — ns ID = 6 A ———————————————————————————————— Rise time tr — (78) — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — (140) — ns RL = 5 Ω ———————————————————————————————— Fall tiem tf — (60) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (1.1) — V IF = 12 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (105) — ns IF = 12 A, VGS = 0 recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 2

2SK2568 Power vs. Temperature Derating 200 Pch (W) 150 Channel Dissipation 100 50 0 50 100 150 200 Case Temperature Tc (°C) 3

2SK2569 Silicon N Channel MOS FET 1st. Edition Jun. 1995 Application MPAK Low frequency power switching 3 Features 1 • Low on-resistance. D 3 2 RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100mA) • 2.5V gate drive device. 2 G 1. Source • Small package (MPAK). 2. Gate 3. Drain 1 S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 50 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 0.2 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 0.4 A ——————————————————————————————————————————— Channel dissipation Pch** 150 mW ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % 1

2SK2569 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 50 — — V ID = 100 µA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 1.0 µA VDS = 40 V, VGS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±2.0 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V ID = 10 µA, VDS = 5 V ——————————————————————————————————————————— Static drain to source on state RDS(on)1 — 2.0 2.6 Ω ID = –100 mA resistance VGS = –4 V * ——————————————————————————————————————————— Static drain to source on state RDS(on)2 — 3.1 5.0 Ω ID = 40 mA resistance VGS = –2.5 V * ——————————————————————————————————————————— Foward transfer admittance |yfs| 0.13 0.23 — S ID = 100 mA VDS = 10 V ——————————————————————————————————————————— Input capacitance Ciss — 14.0 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 17.2 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 1.73 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 40 — µs VGS = 10 V, ID = 100 mA ———————————————————————————————— Rise time tr — 86 — µs RL = 300 Ω ———————————————————————————————— Turn–off delay tiem td(off) — 1120 — µs ———————————————————————————————— Fall time tf — 430 — µs ——————————————————————————————————————————— * Pulse Test Marking is "ZN–" 2

2SK2569 Maximum Channel Dissipation Curve 200 Pch (mW) 150 Channel Dissipation 100 50 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • MPAK + 0.1 0.65 – 0.3 + 0.10 + 0.10 0.4 – 0.05 0.16 – 0.06 + 0.2 2.8 – 0.6 0 ~ 0.15 1.5 + 0.1 0.65 – 0.3 0.95 0.95 1.9 + 0.3 2.8 – 0.1 0.3 + 0.2 1.1– 0.1 Hitachi Code MPAK EIAJ SC–59A JEDEC — 3

2SK2582 Silicon N Channel MOS FET 1st. Edition Jun. 1995 Preliminary Application TO–220AB High speed power switching Features D 2 • Low on–resistance • High speed switching 1 • Low drive current G • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1. Gate converter 1 2. Drain 2 3 3 3. Source S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 350 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 13 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 52 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 13 A ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2582 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 350 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =350 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.30 0.40 Ω ID = 7 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 9.0 — S ID = 7 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1250 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 420 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 70 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 7 A ———————————————————————————————— Rise time tr — 70 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns RL = 3.75Ω ———————————————————————————————— Fall time tf — 52 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 13 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 350 — ns IF = 13 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1401 2

2SK2582 Maximum Channel Maximum Safe Operation Area Dissipation Curve 100 80 10 30 Pch (W) I D (A) µs 10 60 PW 0 10 µs 1 = m 10 s Drain Current D m C Channel Dissipation 3 s O (1 pe 40 Operation in Sh ra ot tio this area is ) n 1 limited by R DS(on) (T c = 20 25 0.3 °C ) 0.1 Ta = 25 °C 0 1 3 10 30 100 300 1000 50 100 150 200 Drain to Source Voltage V DS (V) Case Temperature Tc (°C) Package Dimensions Unit : mm • TO–220AB 11.5 max f 3.6 + 0.08 0.1 4.8 max 3.0max 9.8 max – 1.27 7.6 min 1.5 max 6.3 min 15.3 max 18.5 ±0.5 1.5 max 12.7 min 0.5 7.8 ±0.5 0.76 ±0.1 2.5 ±0.5 2.7 max Hitachi Code TO–220AB 5.1 ±0.5 EIAJ SC–46 JEDEC — 3

2SK2582 Package Dimensions Unit : mm • TO–220AB 11.5 max f 3.6 + 0.08 0.1 4.8 max 3.0max 9.8 max – 1.27 7.6 min 1.5 max 6.3 min 15.3 max 18.5 ±0.5 1.5 max 12.7 min 0.5 7.8 ±0.5 0.76 ±0.1 2.5 ±0.5 2.7 max Hitachi Code TO–220AB 5.1 ±0.5 EIAJ SC–46 JEDEC — 4

2SK2586 Silicon N Channel MOS FET 3rd. Edition Jun. 1995 Application TO–3P High speed power switching Features • Low on–resistance S RDS(on) = 7 mΩ typ. 2 • High speed switching • 4 V gate drive device can be driven from 1 5 V souece G 1. Gate 1 2. Drain 2 (Flange) 3 3 3. Source D Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID** 60 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 240 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR** 60 A ——————————————————————————————————————————— Avalanche current IAP*** 45 A ——————————————————————————————————————————— Avalanche energy EAR*** 174 mJ ——————————————————————————————————————————— Channel dissipation Pch** 125 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25°C *** Value at Tch = 25°C, Rg ≥ 50 Ω 1

2SK2586 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 7 10 mΩ ID = 30 A resistance VGS = 10 V * ———————————————————————— — 10 16 mΩ ID = 30 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 35 60 — S ID = 30 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3550 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1760 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 500 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 35 — ns ID = 30 A ———————————————————————————————— Rise time tr — 260 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 480 — ns RL = 1.0 Ω ———————————————————————————————— Fall time tf — 370 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.94 — V IF = 60 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 140 — ns IF = 60 A, VGS = 0 recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curves of 2SK2529. 2

2SK2586 Power vs. Temperature Derating Maximum Safe Operation Area 200 500 10 µs Pch (W) 200 10 0 I D (A) 100 µs 150 PW 1 50 m = s 10 D Channel Dissipation C Drain Current m O 20 s pe 100 (1 ra sh tio 10 Operation in ot n ) (T this area is c 5 limited by R DS(on) = 25 50 °C 2 ) 1 Ta = 25 °C 0.5 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.1 θ ch – c = 1.0 °C/W, Tc = 25 °C 0.05 PDM PW D= 0.02 T 0.03 1 lse 0.0 t pu PW ho 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 3

2SK2586 Package Dimensions Unit : mm • TO–3P φ 3.2 ± 0.2 5.0 max 5.0 ± 0.3 1.0 typ 16.0 max 1.5 typ 0.5 typ 20.1 max 14.9 ± 0.2 2.0 typ 0.3 typ 1.6 typ 2.8 typ 18.0 ± 0.5 1.4 max 2.0 typ 1.0 ± 0.2 0.6 ± 0.2 3.6 typ 0.9 typ 1.0 typ Hitachi Code TO–3P 5.45 ± 0.2 5.45 ± 0.2 EIAJ SC–65 JEDEC — 4

2SK2590 Silicon N Channel MOS FET 1st. Edition Jun. 1995 Preliminary Application TO–220AB High speed power switching Features D 2 • Low on–resistance • High speed switching 1 • Low drive current G • No Secondary Breakdown • Suitable for Switching regulator, DC – DC 1. Gate converter, Motor Control 1 2. Drain 2 3 3 3. Source S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2590 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.33 0.45 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 4.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 700 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 260 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 4 A ———————————————————————————————— Rise time tr — 45 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 35 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 150 — ns IF = 7 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1957. 2

2SK2590 Maximum Channel Maximum Safe Operation Area Dissipation Curve 50 80 30 10 10 µs Pch (mW) 0 I D (A) 10 PW µs 60 = 1 10 m D s m C 3 s O Drain Current (1 pe Channel Dissipation Sh ra 40 Operation in ot tio 1 this area is ) n (T limited by R DS(on) c = 25 0.3 °C 20 ) 0.1 Ta = 25 °C 0.05 1 3 10 30 100 300 1000 0 50 100 150 200 Drain to Source Voltage V DS (V) Case Temperature Tc (°C) Package Dimensions Unit : mm • TO–220AB 11.5 max f 3.6 + 0.08 0.1 4.8 max 3.0max 9.8 max – 1.27 7.6 min 1.5 max 6.3 min 15.3 max 18.5 ±0.5 1.5 max 12.7 min 0.5 7.8 ±0.5 0.76 ±0.1 2.5 ±0.5 2.7 max Hitachi Code TO–220AB 5.1 ±0.5 EIAJ SC–46 JEDEC — 3

2SK2590 Package Dimensions Unit : mm • TO–220AB 11.5 max f 3.6 + 0.08 0.1 4.8 max 3.0max 9.8 max – 1.27 7.6 min 1.5 max 6.3 min 15.3 max 18.5 ±0.5 1.5 max 12.7 min 0.5 7.8 ±0.5 0.76 ±0.1 2.5 ±0.5 2.7 max Hitachi Code TO–220AB 5.1 ±0.5 EIAJ SC–46 JEDEC — 4

2SK2591 Silicon N Channel MOS FET 1st. Edition Jun. 1995 Preliminary Application TO–220CFM High speed power switching Features D • Low on–resistance 2 • High speed switching • Low drive current 1 • No secondary breakdown G 1 2 • Suitable for switching regulator and DC–DC 3 1. Gate converter 2. Drain 3 3. Source S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 1

2SK2591 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS =500 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — –3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.45 0.60 Ω ID = 4 A resistance VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 7.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 410 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 130 — ns RL = 5Ω ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 380 — ns IF = 8 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1166 2

2SK2591 Maximum Channel Dissipation Curve 40 Pch (W) 30 Channel Dissipation 20 10 0 50 100 150 200 Case Temperature Tc (°C) Package Dimensions Unit : mm • TO–220CFM 10.0 ± 0.3 2.7 ± 0.2 φ 3.2 ± 0.2 15.0 ± 0.3 12.0 ± 0.3 1.0 ± 0.2 4.45 ± 0.3 1.15 ± 0.2 13.6 ± 1.0 2.5 ± 0.2 4.1 ± 0.3 0.6 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.7 ± 0.1 Hitachi Code TO–220CFM EIAJ — JEDEC — 3

ADE-208-269 (Z) HAT1001F Silicon P Channel Power MOS FET 2nd. Edition Apr. 1995 Application SOP–8 Power switching Features 7 6 5 8 5 6 7 8 • Low on–resistance D D D D 4 • Capable of 2.5 V gate drive 1 2 3 • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source 4 Gate ———————————————————— S S S 5, 6, 7, 8 Drain 1 2 3 Hitachi Code FP–8D ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –15 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1001F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.07 Ω ID = –2 A resistance VGS = –4 V * ———————————————————————— — 0.07 0.1 Ω ID = –2 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 8.0 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1170 — pF VDS = - 10 V ———————————————————————————————— Output capacitance Coss — 860 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 310 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 240 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 360 — ns ———————————————————————————————— Fall time tf — 430 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = –3.5A, VGS = 0 recovery time diF / dt = –20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1001F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 100 µs Pch (W) 10 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 PW 1 m –3 = s DC 10 Channel Dissipation Drain Current (1 1.0 –1 Op sh ms er ot Operation in at ) ion –0.3 this area is ** limited by R DS(on) 0.5 –0.1 –0.03 –0.01 Ta = 25 °C 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V Pulse Test –16 –8 I D (A) –2.5 V (A) –5 V –4 V ID –12 –6 Drain Current Drain Current –2 V –8 –4 Tc = –25 °C –4 –2 VGS = –1.5 V 25 °C 75 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1001F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 0.1 VGS = –2.5 V –0.2 0.05 –0.5 A –4 V I D = –2 A –0.1 0.02 –1 A 0.01 0 –2 –4 –6 –8 –10 –0.5 –1 –2 –5 –10 –20 –50 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.2 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 Tc = –25 °C 10 25 °C 0.12 ID= –0.5, –1, –2 A 5 VGS = –2.5 V 75 °C 0.08 2 –2 A 0.04 1 –4 V –0.5 A, –1 A V DS = –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1001F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 5000 Capacitance C (pF) 200 2000 Ciss 100 1000 Coss 50 500 20 200 Crss di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 100 –0.1 –0.3 –1 –3 –10 –30 –100 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 t d(off) V GS (V) V DS (V) V DD = –5 V 500 –10 –10 V –4 tf Switching Time t (ns) –15 V V DS 200 Gate to Source Voltage Drain to Source Voltage –20 V DD = –15 V –8 tr V GS –10 V 100 –5 V –30 –12 50 V GS = –4 V, V DD = –10 V PW = 5 µs, duty < 1 % –40 –16 20 t d(on) I = –3.5 A –50 D –20 10 0 20 40 60 80 100 –0.1 –0.3 –1 –3 –10 –30 –100 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1001F Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –5 V –3 V –12 V GS = 0, 5 V –8 –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–360 (Z) HAT1002F Silicon P Channel Power MOS FET 2nd. Edition Apr. 1995 Application SOP–8 High speed power switching 5 Features 7 6 8 • Low on–resistance 3 4 5 6 7 8 1 2 • Capable of 4 V gate drive D D D D • Low drive current • High density mounting 4 G 1, 2, 3 Source Ordering Information 4 Gate 5, 6, 7, 8 Drain ———————————————————— Hitachi Code FP–8D S S S ———————————————————— 1 2 3 EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –14 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1002F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.06 0.07 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.10 0.13 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.0 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 960 — pF VDS = - 10 V ———————————————————————————————— Output capacitance Coss — 630 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 215 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 50 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 285 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.8 — V IF = –3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 60 — ns IF = –3.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1002F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board 10 µs 100 µs Pch (W) –30 I D (A) (40 x 40 x 1.6 mm) 1.5 –10 DC PW 1m –3 Op = s Channel Dissipation Drain Current er 10 1.0 –1 ati m on s Operation in ** (T –0.3 this area is c= limited by R DS(on) 25 –0.1 °C 0.5 ) –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics –10 V –8 V Typical Transfer Characteristics –20 –20 –6 V –4.5 V –5 V Tc = –25 °C –16 25 °C I D (A) –16 (A) 75 °C –4 V ID –12 –12 Drain Current Drain Current –8 –3.5 V –8 –4 VGS = –3 V –4 V DS = –10 V Pulse Test Pulse Test 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1002F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1 –0.5 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 VGS = –4 V 0.1 –0.2 0.05 I D = –2 A –10 V –0.1 –1 A 0.02 –0.5 A 0.01 0 –6 –0.1 –0.2 –0.5 –1 –2 –5 –10 –2 –4 –8 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.20 20 Forward Transfer Admittance |y fs | (S) Pulse Test R DS(on) ( Ω) Tc = –25 °C I D = –5 A 10 0.16 5 75 °C V GS = –4 V 25 °C 0.12 –2 A –1 A 2 0.08 1 –5 A, –2 A, –1 A 0.04 –10 V 0.5 V DS = –10 V Pulse Test 0 0.2 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 -10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1002F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 Crss 50 100 20 30 di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 10 –0.2 –0.5 –1 –2 –5 –10 –20 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS (V) V DS (V) V DD = –5 V –10 V 500 –10 –25 V –4 Switching Time t (ns) tr 200 Gate to Source Voltage Drain to Source Voltage –20 V GS –8 V DS tf 100 –30 V DD = –25 V –12 t d(on) –10 V 50 –5 V t d(off) –40 –16 20 V GS = –4 V, V DD = –10 V I D = –3.5 A PW = 3 µs, duty < 1 % –50 –20 10 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1002F Reverse Drain Current vs. Source to Drain Voltage –20 Reverse Drain Current I DR (A) –16 V GS = –5 V 0V –12 –8 –4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–361 (Z) HAT1004F Target Specification Silicon P Channel Power MOS FET 2nd. Edition Apr. 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 7 8 5 6 1 2 • Low on–resistance D D D D • Capable of 2.5V gate drive • Low drive current • High density mounting 2 4 G G 1, 3 Source Ordering Information 2, 4 Gate S1 S3 5, 6, 7, 8 Drain ———————————————————— Hitachi Code FP–8D MOS1 MOS2 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1004F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.12 Ω ID = –2A resistance VGS = –4V * ———————————————————————— — 0.14 0.2 Ω ID = –2A VGS = –2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 750 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 190 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 28 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 125 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 135 — ns ———————————————————————————————— Fall time tf — 135 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 40 — ns IF = –2.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1004F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 PW –3 = Channel Dissipation Drain Current 2 DC 10 Dr 1.0 –1 Op m ive er s 1 Operation in at Op Dr –0.3 ion this area is er ive ** at Op limited by R DS(on) ion 0.5 –0.1 er at ion –0.03 Ta = 25 °C 1 shot pulse –0.01 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics –10 Typical Transfer Characteristics –10 10 V 5V 2.5 V –8 I D (A) –8 (A) 4V 75 °C 3.5 V Tc = –25 °C 25 °C ID –6 –6 Drain Current Drain Current 2V –4 –4 –2 VGS = 1.5 V –2 V DS = –10 V Pulse Test Pulse Test 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1004F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 VGS = –2.5 V 0.1 –4 V –0.2 I D = –2 A 0.05 –0.1 –1 A 0.02 –0.5 A 0.01 0 –2 –4 –6 –8 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 20 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 10 0.4 Tc = –25 °C 5 25 °C 0.3 I D = –2 A 2 75 °C –1 A, –0.5 A 0.2 V GS = –2.5 V 1 0.1 0.5 –2 A, –1 A, –0.5 A V DS = –10 V –4 V Pulse Test 0 0.2 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1004F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 Capacitance C (pF) 200 100 1000 Ciss 50 300 Coss 100 Crss 20 10 30 di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 5 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –5 V –10 V t d(off) –10 –2 200 Switching Time t (ns) –20 V tf 100 Gate to Source Voltage Drain to Source Voltage –20 V DS –4 V GS tr 50 V DD = –20 V t d(on) –30 –10 V –6 –5 V 20 –40 –8 10 V GS = –4 V, V DD = –10 V I = –2.5 A PW = 3 µs, duty < 1 % –50 D –10 5 0 4 8 12 16 20 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1004F Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) –8 V GS = –5 V –6 0, 5 V –4 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–362 (Z) HAT1005F Silicon P Channel Power MOS FET 2nd Edition Apr. 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 2.5 V gate drive • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source ———————————————————— S S S 4 Gate 1 2 3 5, 6, 7, 8 Drain Hitachi Code FP–8D ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –14 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1005F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.07 0.09 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.095 0.13 Ω ID = –2 A VGS = –4 V * ———————————————————————— — 0.14 0.2 Ω ID = -0.7 A VGS = - 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 840 — pF VDS = - 10 V ———————————————————————————————— Output capacitance Coss — 515 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 145 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 115 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 100 — ns ———————————————————————————————— Fall time tf — 120 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.8 — V IF = –3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 65 — ns IF = –3.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1005F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 –10 PW 1m –3 = s Channel Dissipation Drain Current DC 10 1.0 –1 Op m s er Operation in at –0.3 this area is ion ** limited by R DS(on) 0.5 –0.1 –0.03 Ta = 25 °C 1 shot pulse –0.01 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics –10 V –8 V –6 V Typical Transfer Characteristics –20 –20 Pulse Test –5 V –4 V Tc = –25 °C –16 –16 (A) I D (A) –3.5 V 25 °C 75 °C –3 V ID –12 –12 Drain Current Drain Current –2.5 V –8 –8 –4 –2 V –4 V DS = –10 V VGS = –1.5 V Pulse Test 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1005F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 VGS = –2.5 V –0.3 0.1 –4 V –0.2 I D = –2 A –10 V 0.05 –0.1 –1 A 0.02 –0.5 A 0.01 0 –2 –4 –6 –8 –10 –0.2 –0.5 –1 –2 –5 –10 –20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.25 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test I D = –2 A 0.20 20 –1 A Tc = –25 °C V GS = –2.5 V 10 0.15 –2 , –1 A 5 –4 V 75 °C 0.10 25 °C –2 , –1 A 2 0.05 –10 V 1 V DS = –10 V 0 0.5 Pulse Test –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1005F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 50 100 Crss 20 30 di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 10 –0.2 –0.5 –1 –2 –5 –10 –20 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –4 V, V DD = –10 V V GS (V) V DS (V) V DD = –5 V –10 V 500 PW = 3 µs, duty < 1 % –10 –25 V –4 Switching Time t (ns) tr 200 Gate to Source Voltage Drain to Source Voltage tf –20 V DS V GS –8 100 V DD = –25 V t d(off) –30 –10 V –12 50 –5 V t d(on) –40 –16 20 –50 I D = –3.5 A –20 10 0 8 16 24 32 40 –0.2 –0.5 –1 –2 –5 –10 –20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1005F Reverse Drain Current vs. Source to Drain Voltage –20 Reverse Drain Current I DR (A) V GS = –5 V –16 0, 5 V –12 –8 –4 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–326 (Z) HAT1006F Silicon P Channel Power MOS FET 1st. Edition Apr. 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4 V gate drive • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source ———————————————————— S S S 4 Gate 1 2 3 5, 6, 7, 8 Drain Hitachi Code FP–8D ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1006F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.14 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.14 0.2 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 910 — pF VDS = - 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 170 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 35 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 190 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 85 — ns ———————————————————————————————— Fall time tf — 105 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.8 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 130 — ns IF = –2.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1006F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 10 µs Pch (W) 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 –3 PW 1 m Channel Dissipation Drain Current = s 1.0 –1 10 DC m Operation in Op s –0.3 this area is er at ion –0.1 limited by R DS(on) * 0.5 * –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V Pulse Test V DS = –10 V –5 V –4 V Pulse Test –16 –8 I D (A) (A) –4.5 V ID –12 –3.5 V –6 Drain Current Drain Current –8 –4 –3 V 75 °C Tc = –25 °C –4 –2 VGS = –2.5 V 25 °C 0 –4 –8 –12 –16 –20 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1006F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 VGS = –4 V –0.3 0.1 I D = –2 A –10 V –0.2 0.05 –1 A –0.1 –0.5 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 20 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 10 0.4 Tc = –25 °C 5 25 °C 0.3 I D = –2 A, –1 A, –0.5 A 2 75 °C 0.2 V GS = –4 V 1 0.1 0.5 –2 A, –1 A, –0.5 A V DS = –10 V –10 V Pulse Test 0 0.2 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1006F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 1000 Ciss 200 Coss 100 300 Crss 50 100 20 di / dt = 20 A / µs 30 VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 -40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –10 V –25 V tr –20 –4 200 Switching Time t (ns) –50 V tf 100 Gate to Source Voltage Drain to Source Voltage –40 V GS –8 V DD = –50 V t d(off) 50 –25 V t d(on) V DS –60 –10 V –12 20 I D = –2.5 A –80 –16 10 V GS = –4 V, V DD = –10 V PW = 3 µs, duty < 1 % –100 –20 5 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1006F Reverse Drain Current vs. Source to Drain Voltage –10 Pulse Test Reverse Drain Current I DR (A) –8 V GS = –5 V –6 0, 5 V –4 –2 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–327 C (Z) HAT1007F Silicon P Channel Power MOS FET 4th. Edition Apr. 1995 Application SOP–8 Power switching 5 Synchronously Rectifier 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1 N/C Ordering Information 2, 3 Source 4 Gate ———————————————————— S S 5, 6, 7, 8 Drain Hitachi Code FP–8D 2 3 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –15 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1007F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.06 0.08 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.1 0.15 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 730 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 680 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 250 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 28 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 165 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 45 — ns ———————————————————————————————— Fall time tf — 95 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 75 — ns IF = –3.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1007F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 –10 PW 1 m –3 = s 10 Channel Dissipation Drain Current DC m 1.0 –1 Op s er Operation in ati –0.3 on this area is ** 0.5 –0.1 limited by R DS(on) –0.03 Ta = 25 °C 1 shot pulse –0.01 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics –20 –10 –10 V V DS = –10 V –5 V –4 V Pulse Test –16 –8 I D (A) (A) V ID –12 –3.5 –6 Drain Current Drain Current –8 –3 V –4 –4 –2 Tc = –25 °C –2.5 V 25 °C VGS = –2 V 75 °C 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT1007F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.5 –0.4 0.2 –0.3 –4 V I D = –3 A 0.1 –0.2 0.05 VGS = –10 V –2 A –0.1 –1 A 0.02 0.01 0 –2 –4 –6 –8 –10 –0.2 –0.5 –1 –2 –5 –10 –20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.2 50 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 0.16 20 I D = –3 A 25 °C 10 Tc = –25 °C 0.12 VGS = –4 V –2, –1A 5 –3 A 75 °C 0.08 –2 A 2 –1 A 0.04 –10 V 1 V DS = –10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 –0.2 –0.5 –1 –2 –5 –10 –20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1007F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 200 1000 Ciss 100 Coss 300 Crss 50 100 20 30 VGS = 0 di / dt = 20 A / µs VGS = 0 f = 1 MHz 10 10 –0.2 –0.5 –1 –2 –5 –10 –20 0 –4 –8 –12 –16 –20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –4 V, V DD = –10 V V GS (V) V DS (V) V DD = –5 V –10 V 500 PW = 5 µs, duty < 1 % –10 –20 V –4 Switching Time t (ns) tr 200 Gate to Source Voltage Drain to Source Voltage –20 V DS V GS –8 tf 100 –30 V DD = –20 V –12 t d(off) –10 V 50 –5 V –40 –16 20 t d(on) –50 I D = –3.5 A –20 10 0 8 16 24 32 40 –0.2 –0.5 –1 –2 –5–10 –20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1007F Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test Reverse Drain Current I DR (A) –16 –12 –5 V –8 V GS = 0, 5 V –4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–363 (Z) HAT1008F Silicon P Channel Power MOS FET 1st. Edition Apr. 1995 Application SOP–8 Power switching 5 Synchronously Rectifier 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1 N/C Ordering Information 2, 3 Source 4 Gate ———————————————————— S S 5, 6, 7, 8 Drain Hitachi Code FP–8D 2 3 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1008F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.075 0.12 Ω ID = –2 A resistance VGS = –10 V * ———————————————————————— — 0.12 0.2 Ω ID = –2 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 4.5 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 670 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 495 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 165 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 24 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 155 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 40 — ns ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 75 — ns IF = –2.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1008F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 PW 1 –3 m = s Channel Dissipation Drain Current DC 10 1.0 –1 m Op s Operation in er –0.3 this area is at ion limited by R DS(on) ** 0.5 –0.1 –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics –10 V –8 V Typical Transfer Characteristics –10 –10 –6 V V –5 V –3.5 –8 25 °C (A) –8 I D (A) Tc = –25 °C Pulse Test –4.5 V 75 °C ID –4 V –6 –6 Drain Current Drain Current –3 V –4 –4 –2 –2 –2.5 V V DS = –10 V VGS = –2 V Pulse Test 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

HAT1008F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 –0.3 VGS = –4 V 0.1 –0.2 I D = –2 A –10 V 0.05 –0.1 –1 A 0.02 –0.5 A 0.01 0 –2 –4 –6 –8 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.25 20 Forward Transfer Admittance |y fs | (S) Pulse Test R DS(on) ( Ω) 10 –25 °C 0.20 I D = –5 A 5 Tc = 25 °C 0.15 V GS = –4 V –2, –1 A 75 °C 2 0.10 1 –5, –2, –1 A 0.05 –10 V 0.5 V DS = –10 V Pulse Test 0 0.2 –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1008F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 Capacitance C (pF) 200 100 1000 Ciss 50 300 Coss 100 20 Crss 10 30 di / dt = 50 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 5 10 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 1000 V GS = –4 V, V DD = –10 V V GS (V) V DS (V) V DD = –5 V –10 V 500 PW = 3 µs, duty < 1 % –10 –25 V –4 Switching Time t (ns) tr 200 Gate to Source Voltage Drain to Source Voltage –20 –8 V DS V GS 100 tf –30 –12 50 V DD = –25 V t d(off) –10 V –40 –5 V –16 20 t d(on) I D = –2.5 A 10 –50 –20 0 8 16 24 32 40 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1008F Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) V GS = –5 V –8 0, 5 V –6 –4 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–364 (Z) HAT1009F Target Specification Silicon P Channel Power MOS FET 2nd. Edition Jun. 1995 Application SOP–8 5 Power switching 7 6 8 4 Features 1 2 3 7 8 5 6 • Low on–resistance D D D D • Capable of 2.5V gate drive • Low drive current 2 4 • High density mounting G G 1, 3 Source Ordering Information 2, 4 Gate S S 5, 6, 7, 8 Drain ———————————————————— 1 2 Hitachi Code FP–8D MOS1 MOS2 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT1009F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.16 Ω ID = –2 A resistance VGS = –4 V * ———————————————————————— — 0.17 0.24 Ω ID = –2 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = –2 A VDS = - 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 720 — pF VDS = - 10 V ———————————————————————————————— Output capacitance Coss — 345 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 16 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 100 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 120 — ns ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = –2.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1009F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 1 –3 PW m s Channel Dissipation Drain Current = 2 DC 10 Dr 1.0 –1 Op m ive Operation in er s 1 Op Dr –0.3 this area is at ion er ive ** at Op limited by R DS(on) ion 0.5 –0.1 er at ion –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics –10 V –5 V –10 –10 –4 V Pulse Test –3.5 V 25 °C –3 V –2.5 V –8 (A) –8 I D (A) Tc = –25 °C 75 °C ID –6 –6 Drain Current Drain Current –2 V –4 –4 –2 –2 VGS = –1.5 V V DS = –10 V Pulse Test 0 0 –1 –2 –3 –4 –5 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

HAT1009F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 VGS = –2.5 V –0.3 0.1 I D = –2 A –4 V –0.2 0.05 –0.1 –1 A 0.02 –0.5 A Pulse Test 0.01 0 –2 –4 –6 –8 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 20 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 10 0.4 Tc = –25 °C 5 0.3 I D = –2 A –1 A –0.5 A 25 °C 2 V GS = –2.5 V 75 °C 0.2 1 –2 A, –1 A, –0.5 A 0.5 0.1 –4 V V DS = –10 V 0 0.2 Pulse Test –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT1009F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 200 1000 Ciss 100 300 Coss 50 100 Crss 20 30 di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –5 V –10 V –10 –25 V –2 200 t d(off) Switching Time t (ns) 100 Gate to Source Voltage Drain to Source Voltage V GS –20 –4 tf V DS 50 tr V DD = –25 V –30 –6 –10 V t d(on) –5 V 20 –40 –8 10 V GS = –4 V, V DD = –10 V PW = 3 µs, duty < 1 % –50 I D = –2.5 A –10 5 0 4 8 12 16 20 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT1009F Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current I DR (A) –8 V GS = –5 V 0, 5 V –6 –4 –2 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–328 B (Z) HAT2001F Silicon N Channel Power MOS FET 3rd. Edition Apr. 1995 Application SOP–8 Power switching Features 7 6 5 8 • Low on–resistance 5 6 7 8 4 3 • Capable of2.5V gate drive D D D D 1 2 • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S S Hitachi Code FP–8D 1 2 3 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2001F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.035 0.045 Ω ID = 3 A resistance VGS = 4V * ———————————————————————— — 0.045 0.06 Ω ID = 3 A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 12 — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1250 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 540 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 120 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns VGS = 4 V, ID = 3 A ———————————————————————————————— Rise time tr — 100 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 210 — ns ———————————————————————————————— Fall time tf — 130 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 50 — ns IF = 5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2001F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : 10 µs 100 µs Pch (W) When using the glass epoxy board 30 I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1 m 3 = s Channel Dissipation 10 Drain Current DC m 1.0 1 Op s er Operation in at 0.3 this area is ion ** limited by R DS(on) 0.5 0.1 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 5V V DS = 10 V 4V 16 2.5 V 2V 16 Pulse Test I D (A) (A) ID 12 12 Drain Current Drain Current 8 Tc = 75°C 8 25°C 4 VGS = 1.5 V 4 –25°C 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2001F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 0.2 ID=5A VGS = 2.5 V 0.05 0.1 4V 2A 0.02 1A 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.10 R DS(on) ( Ω) Pulse Test 20 Tc = –25 °C 0.08 I D = 1 A, 2 A, 5 A 10 0.06 25 °C 2.5 V 5 75 °C 0.04 1 A, 2 A, 5 A 2 V GS = 4 V 0.02 1 V DS = 10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2001F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 20 A/µs VGS = 0 Reverse Recovery Time trr (ns) 500 V GS = 0, Ta = 25°C f = 1 MHz 3000 Capacitance C (pF) Ciss 200 1000 Coss 100 300 50 100 Crss 20 30 10 10 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 10 1000 V GS = 4 V, V DD = 10 V V GS (V) I D= 5 A V DS (V) 500 PW = 3 µs, duty < 1 % 40 V DD = 5 V 8 Switching Time t (ns) t d(off) 10 V 25 V 200 Gate to Source Voltage Drain to Source Voltage 30 V 6 tf DS 100 V GS tr 20 4 50 t d(on) 10 V DD = 25 V 2 20 10 V 5V 10 0 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2001F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 V GS = 0, –5 V 8 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–270 (Z) HAT2002F Silicon N Channel Power MOS FET 2nd. Edition Apr. 1995 Application SOP–8 Power switching 5 Synchronously Rectifier 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source 4 Gate ———————————————————— S S S 1 2 3 5, 6, 7, 8 Drain Hitachi Code FP–8D ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2002F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.03 0.04 Ω ID = 3 A resistance VGS = 10V * ———————————————————————— — 0.05 0.06 Ω ID = 3 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 8.0 — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 560 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 150 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns VGS = 4 V, ID = 3 A ———————————————————————————————— Rise time tr — 190 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 75 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = 5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2002F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : 100 µs When using the glass epoxy board 30 10 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 1m PW s 3 = (1 10 m Drain Current Channel Dissipation 1 DC sh s 1.0 Op ot Operation in ) er 0.3 this area is ati on limited by R DS(on) ** 0.5 0.1 0.03 Ta = 25 °C 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 3.5 V V DS = 10 V 4V Pulse Test 16 Pulse Test 16 I D (A) (A) ID 12 3V 12 Drain Current Drain Current 8 8 Tc = 75°C 25°C 2.5 V –25°C 4 4 VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2002F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 0.2 VGS = 4 V 0.05 ID=3A 0.1 10 V 2A 0.02 1A 0.01 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 20 50 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.10 R DS(on) ( Ω) Pulse Test 20 0.08 I D = 1 A, 2 A, 3 A Tc = –25 °C 10 0.06 75 °C 4V 5 25 °C 0.04 2 1 A, 2 A, 3 A 0.02 V GS = 10 V 1 V DS = 10 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2002F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 5000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz 2000 Capacitance C (pF) 200 1000 Ciss 100 500 Coss 50 200 Crss 20 di/dt = 20 A/µs 100 V GS = 0, Ta = 25°C 10 50 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 4 V, V DD = 10 V V GS (V) V DS (V) 500 PW = 3 µs, duty < 1 % 80 16 Switching Time t (ns) V GS V DD = 5 V 200 Gate to Source Voltage 10 V Drain to Source Voltage 60 20 V 12 tf 100 ID=5A tr t d(off) 40 8 50 V DS t d(on) 20 V DD = 20 V 4 20 10 V 5V 10 0 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2002F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 V GS = 0, –5 V 8 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–329 A (Z) HAT2003F Silicon N Channel Power MOS FET 2nd. Edition Apr. 1995 Application SOP–8 5 Power switching 7 6 8 Features 3 4 1 2 7 8 5 6 • Low on–resistance D D D D • Capable of 2.5V gate drive • Low drive current • High density mounting 2 4 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S S 5, 6, 7, 8 Drain 1 2 Hitachi Code FP–8DA MOS2 MOS1 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2003F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.15 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.13 0.22 Ω ID = 2A VGS = 2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2 5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 380 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 200 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 70 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 80 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 2.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = 2.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2003F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 10 1 3 m PW s Channel Dissipation Drain Current 2 DC 10 = 1 Dr 1.0 Op m s iv e Operation in er ati Op 1 0.3 on Dr this area is er iv ** at e limited by R DS(on) ion 0.5 Op 0.1 er at ion 0.03 Ta = 25 °C 1 shot pulse 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** 1 Drive Operation When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 2.5 V 8 6V 8 (A) I D (A) 4V Tc = 75°C –25°C 3V ID 6 6 25°C 2V Drain Current Drain Current 4 4 VGS = 1.5 V 2 2 V DS = 10 V Pulse Test Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2003F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 VGS = 2.5 V Drain to Source Voltage 0.3 0.1 4V 0.2 ID=2A 0.05 0.1 1A 0.02 0.5 A 0.01 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.25 Pulse Test R DS(on) ( Ω) V DS = 10 V 0.5 A 20 Pulse Test 1A 0.20 2A 10 75 °C V GS = 2.5 V 0.15 25 °C 5 I D = 0.5 A, 1 A, 2 A 0.10 Tc = –25 °C 2 4V 0.05 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2003F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 20 A/µs VGS = 0 Reverse Recovery Time trr (ns) 500 V GS = 0, Ta = 25°C f = 1 MHz 3000 Capacitance C (pF) 200 1000 Ciss 100 300 Coss 50 100 Crss 30 20 10 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 10 500 V GS (V) V DS (V) V DD = 5 V 40 10 V 8 200 tr Switching Time t (ns) 25 V 100 t d(off) Gate to Source Voltage Drain to Source Voltage 30 6 V DS tf V GS 50 20 4 I D = 2.5 A 20 t d(on) 10 V DD = 25 V 2 10 10 V V GS = 4 V, V DD = 10 V 5V PW = 3 µs, duty < 1 % 0 5 0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2003F Reverse Drain Current vs. Souece to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 5V V GS = 0, –5 V 4 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–330 C (Z) HAT2004F Target Specification Silicon N Channel Power MOS FET 4th. Edition Apr. 1995 Application SOP–8 Power switching 5 7 6 Features 8 • Low on–resistance 4 3 7 8 5 6 1 2 • Capable of 2.5V gate drive D D D D • Low drive current • High density mounting 2 4 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— 5, 6, 7, 8 Drain Hitachi Code FP–8D S1 S3 ———————————————————— MOS1 MOS2 EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 15 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2004F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 15 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 15 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.055 0.07 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.07 0.09 Ω ID = 2A VGS =2.5V * ——————————————————————————————————————————— Forward tramsfer admittance |yfs| 4.5 7.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 620 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 460 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on)* — 22 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 90 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off)* — 110 — ns ———————————————————————————————— Fall time tf — 115 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 50 — ns IF = 3.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2004F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 1 ms PW 3 =1 DC Channel Dissipation Drain Current 0m 2 1 Op s Dr 1.0 er ive Operation in at ion Op 1 0.3 this area is ** Dr e ive ra limited by R DS(on) tio 0.5 Op 0.1 n er at ion 0.03 Ta = 25 °C 1 shot pulse 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** 1 Drive Operation When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V 3V V DS = 10 V 5V Pulse Test 16 25°C 4V 16 (A) I D (A) 3.5 V –25°C Tc = 75°C 2.5 V ID 12 12 Drain Current Drain Current 8 2V 8 4 4 VGS = 1.5 V Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2004F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 VGS = 2.5 V 0.2 0.05 4V ID=2A 0.1 1A 0.5 A 0.02 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 20 Tc = –25 °C 0.16 10 0.12 I D = 0.5 A, 1 A, 2 A 25 °C 5 75 °C V GS = 2.5 V 0.08 2 0.5 A, 1 A, 2 A 0.04 4V 1 V DS = 10 V Pulse Test 0 0.5 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2004F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 VGS = 0 Reverse Recovery Time trr (ns) 500 f = 1 MHz 3000 Capacitance C (pF) 1000 200 Ciss 100 300 Coss 50 100 Crss 30 20 di/dt = 20 A/µs V GS = 0, Ta = 25°C 10 10 0.2 0.5 1 2 5 10 20 0 4 8 12 16 20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 25 10 500 V GS (V) V DS (V) V DD = 5 V tr 20 10 V 8 200 Switching Time t (ns) 15 V tf V DS 100 Gate to Source Voltage Drain to Source Voltage 15 6 t d(off) V GS 50 t d(on) 10 4 20 5 V DD = 15 V 2 10 V GS = 4 V, V DD = 10 V 10 V 5V PW = 3 µs, duty < 1 % 0 5 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2004F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 V GS = 0, –5 V 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

HAT2005F Silicon N Channel Power MOS FET 2nd. Edition Jun. 1995 Application SOP–8 Power switching 5 7 6 8 Features 5 6 7 8 4 3 D D D D 1 2 • Low on–resistance • Capable of 2.5V gate drive • Low drive current 4 • High density mounting G Ordering Information 1 N/C 2, 3 Source S S ———————————————————— 2 3 4 Gate 5, 6, 7, 8 Drain Hitachi Cord FP–8D ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 3.5 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2005F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.05 0.065 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.06 0.09 Ω ID = 2A VGS = 2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 7 10 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 810 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 155 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on time ton — 100 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Turn–off time toff — 270 — ns VDD = 10 V ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3.5 A, VGS = 0 voltage ——————————————————————————————————————————— * Pulse Test 2

HAT2005F Power vs. Temperature Derating 2.0 Test Condition : When using the glass epoxy board Pch (W) (40 x 40 x 1.6 mm) 1.5 Channel Dissipation 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 3

ADE–208–365 A (Z) HAT2006F Silicon N Channel Power MOS FET 2nd. Edition Jun. 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G Ordering Information 1, 2, 3 Source 4 Gate ———————————————————— S S S 1 2 3 5, 6, 7, 8 Drain Hitachi Cord FP–8D ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 16 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2006F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.045 0.06 Ω ID = 2 A resistance VGS = 10V * ———————————————————————— — 0.065 0.075 Ω ID = 2 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4 6.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 860 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 135 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 155 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 80 — ns ———————————————————————————————— Fall time tf — 80 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 90 — ns IF = 4 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2006F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1 m = s 3 10 Channel Dissipation Drain Current m 1.0 1 DC s Op Operation in er 0.3 this area is at ion limited by R DS(on) ** 0.5 0.1 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics Typical Transfer Characteristics 20 20 10 V V DS = 10 V 8V 6V Pulse Test 16 16 I D (A) (A) 5V 4V 3.5 V ID 12 12 Drain Current Drain Current 8 3V 8 25°C Tc = 75°C 4 –25°C 4 VGS = 2.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2006F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 1 0.5 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 VGS = 4 V 0.2 0.05 2.5 V ID=2A 0.1 0.02 1A 0.5 A 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 20 0.16 Tc = –25 °C 10 0.12 I C = 0.5 A, 1 A, 2 A 25 °C 5 0.08 V GS = 4 V 2 75 °C 0.5 A, 1 A, 2 A 0.04 1 10 V V DS = 10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2006F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 20 A/µs VGS = 0 Reverse Recovery Time trr (ns) 500 V GS = 0, Ta = 25°C f = 1 MHz 3000 Capacitance C (pF) 200 1000 Ciss Coss 100 300 50 100 Crss 20 30 10 10 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 100 20 1000 V GS = 4 V, V DD = 10 V V GS (V) I D= 4 A V DS (V) 500 PW = 3 µs, duty < 1 % 80 16 Switching Time t (ns) 200 tr Gate to Source Voltage Drain to Source Voltage 60 V DD = 10 V 12 V DS 25 V 100 tf 50 V 40 8 t d(off) V GS 50 20 4 t d(on) V DD = 50 V 20 25 V 10 V 10 0 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2006F Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 V GS = 0, –5 V 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–366 (Z) HAT2007F Silicon N Channel Power MOS FET 2nd. Edition May 1995 Application SOP–8 Power switching 5 synchronously Rectifier 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1 N/C Ordering Information 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S 2 3 Hitachi Code FP–8D ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 16 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 A ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2007F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.04 0.07 Ω ID = 2A resistance VGS = 10V * ———————————————————————— — 0.065 0.11 Ω ID = 2A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2 5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 680 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 470 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 110 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 100 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 4A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 70 — ns IF = 4A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2007F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : 10 µs 100 µs Pch (W) When using the glass epoxy board 30 I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1m 3 = s Channel Dissipation 10 Drain Current 1 DC ms 1.0 Operation in Op er 0.3 this area is at ion limited by R DS(on) ** 0.5 0.1 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics 10 V 8 V Typical Transfer Characteristics 20 20 4V V DS = 10 V 6V Pulse Test Pulse Test 16 (A) 16 5V I D (A) 4.5 V 3.5 V ID 12 12 Drain Current Drain Current 8 3V 8 Tc = 75°C 25°C 4 4 2.5 V –25°C VGS = 2 V 0 2 4 6 8 10 0 1 2 3 4 5 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 3

HAT2007F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 ID=5A 0.1 VGS = 4 V 0.2 0.05 10 V 0.1 2A 0.02 1A 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 25 °C 10 0.16 Tc = –25 °C 5 0.12 IC=5A 1 A, 2 A 75 °C 2 0.08 V GS = 4 V 1 1 A, 2 A, 5 A 0.5 0.04 V DS = 10 V 10 V Pulse Test 0 0.2 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2007F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 200 Capacitance C (pF) 100 1000 Ciss 50 300 Coss 100 Crss 20 di/dt = 20 A/µs 10 30 V GS = 0, Ta = 25°C VGS = 0 10 f = 1 MHz 5 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 20 1000 V GS = 4 V, V DD = 10 V V GS (V) I D= 4 A V DS (V) 500 PW = 3 µs, duty < 1 % 40 16 Switching Time t (ns) V DD = 5 V 10 V 20 V 200 Gate to Source Voltage Drain to Source Voltage tr 30 12 100 V GS V DS tf 20 8 50 t d(off) 10 V DD = 20 V 4 20 t d(on) 10 V 5V 10 0 0 8 16 24 32 40 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2007F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 V GS = 0, –5 V 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–367 (Z) HAT2008F Target Specification Silicon N Channel Power MOS FET 1st. Edition May 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 • Low on–resistance 7 8 5 6 1 2 • Capable of 2.5V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Cord FP–8D MOS1 MOS2 ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2008F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.055 0.075 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.07 0.11 Ω ID = 2A VGS =2.5V * ——————————————————————————————————————————— Forward tramsfer admittance |yfs| 5.0 7.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 620 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 420 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 140 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 18 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 85 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 110 — ns ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = 3.5 A recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2008F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1m 3 = s 10 Channel Dissipation Drain Current DC ms 1 2 1.0 Op Dr Operation in er at ive 1 0.3 this area is ion Dr O ** pe ive limited by R DS(on) ra 0.5 Op 0.1 t io er n at ion 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics 10 V 5 V Typical Transfer Characteristics 20 20 3V V DS = 10 V 4V Pulse Test Pulse Test 16 16 (A) 3.5 V I D (A) 2.5 V ID 12 12 Drain Current Drain Current 8 2V 8 25°C Tc = 75°C –25°C 4 4 VGS = 1.5 V 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2008F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 ID=5A 0.1 VGS = 2.5 V 0.2 0.05 4V 2A 0.1 1A 0.02 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 20 0.16 Tc = –25 °C 10 0.12 IC=5A 2A 1A 5 75 °C 25 °C 0.08 V GS = 2.5 V 2 1 A, 2 A, 5 A 0.04 4V 1 V DS = 10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2008F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 di/dt = 20 A/µs Reverse Recovery Time trr (ns) V GS = 0, Ta = 25°C 3000 Capacitance C (pF) 200 100 1000 Ciss 50 300 Coss 100 Crss 20 10 30 VGS = 0 10 f = 1 MHz 5 0.2 0.5 1 2 5 10 20 0 4 8 12 16 20 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 10 500 V GS (V) I D = 3.5 A V DS (V) 40 8 200 Switching Time t (ns) t d(off) V DD = 5 V 100 Gate to Source Voltage Drain to Source Voltage 10 V 30 20 V 6 tf 50 tr V DS 20 V GS 4 t d(on) 20 10 V DD = 20 V 2 10 V GS = 4 V, V DD = 10 V 10 V 5V PW = 3 µs, duty < 1 % 0 5 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2008F Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 5V V GS = 0, –5 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–368 (Z) HAT2009F Target Specification Silicon N Channel Power MOS FET 1st. Edition May 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 • Low on–resistance 7 8 5 6 1 2 • Capable of 2.5V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Code FP–8D MOS1 MOS2 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2009F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.065 0.08 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.08 0.12 Ω ID = 2A VGS =2.5V * ——————————————————————————————————————————— Forward tramsfer admittance |yfs| 4.5 7.0 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 610 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 330 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 105 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 80 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 110 — ns ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 50 — ns IF = 3.5 A recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2009F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1m 3 s = Channel Dissipation Drain Current DC 10 1 ms 2 1.0 Op Dr Operation in er at ive 1 0.3 this area is ion Dr O ** pe ive limited by R DS(on) ra 0.5 Op 0.1 t io er n at ion 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics 10 V 5 V Typical Transfer Characteristics 20 20 3V V DS = 10 V 16 4.5 V Pulse Test 16 I D (A) (A) 4V 3.5 V 2.5 V ID 12 12 Drain Current Drain Current 8 8 2V Tc = 75°C 4 25°C 4 VGS = 1.5 V –25°C Pulse Test 0 2 4 6 8 10 0 5 1 2 3 4 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2009F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 VGS = 2.5 V 0.2 0.05 4V ID=2A 0.1 1A 0.02 0.5 A 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 20 0.16 Tc = –25 °C 0.5 A 10 I C = 2A, 1 A 0.12 5 V GS = 2.5 V 25 °C 0.08 2A 75 °C 0.5 A 1 A 2 4V 0.04 1 V DS = 10 V 0.5 Pulse Test 0 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2009F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 di/dt = 20 A/µs Reverse Recovery Time trr (ns) V GS = 0, Ta = 25°C 3000 Capacitance C (pF) 200 100 1000 Ciss Coss 50 300 100 Crss 20 10 30 VGS = 0 10 f = 1 MHz 5 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 10 1000 V GS (V) I D = 3.5 A V GS = 4 V, V DD = 10 V V DS (V) 500 PW = 3 µs, duty < 1 % 40 8 Switching Time t (ns) V DD = 5 V 200 Gate to Source Voltage Drain to Source Voltage 30 V 10 V 6 t d(off) DS 25 V 100 tf 20 V GS 4 50 tr 10 V DD = 25 V 2 20 t d(on) 10 V 5V 10 0 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2009F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 V GS = 0 5V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–369 (Z) HAT2010F Target Specification Silicon N Channel Power MOS FET 1st. Edition May 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 3 • Low on–resistance 7 8 5 6 1 2 • Capable of 4V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Code FP–8D MOS1 MOS2 ———————————————————— EIAJ Code SC–527–8A ———————————————————— JEDEC Code — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 3.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT2010F Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.06 0.075 Ω ID = 2A resistance VGS = 10V * ———————————————————————— — 0.09 0.13 Ω ID = 2A VGS =4V * ——————————————————————————————————————————— Forward tramsfer admittance |yfs| 3 4.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 470 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 330 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 95 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 90 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 40 — ns ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.9 — V IF = 3.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = 3.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2010F Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 10 µs 100 µs Pch (W) I D (A) (40 x 40 x 1.6 mm) 1.5 10 PW 1m 3 s = Channel Dissipation Drain Current DC 10 1 ms 2 1.0 Op Dr er ive Operation in at 1 0.3 this area is ion Dr O ** pe ive limited by R DS(on) ra 0.5 Op 0.1 t io er n at ion 0.03 Ta = 25 °C 0.01 1 shot Pulse 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) ** 1 Drive Operation When using the glass epoxy board (40 x 40 x 1.6 mm) Typical Output Characteristics 10 V 8 V Typical Transfer Characteristics 20 20 6V Pulse Test 5V Tc = 75°C 4.5 V 16 16 (A) I D (A) –25°C 4V 25°C ID 12 12 Drain Current Drain Current 3.5 V 8 8 3V 4 4 2.5 V V DS = 10 V VGS = 2 V Pulse Test 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

HAT2010F Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test 0.5 0.4 0.2 Drain to Source Voltage 0.3 0.1 VGS = 4 V 0.2 ID=2A 0.05 10 V 0.1 1A 0.02 0.5 A 0.01 0 2 4 6 8 10 0.2 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 20 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.20 R DS(on) ( Ω) Pulse Test 10 Tc = –25 °C 0.16 I C = 1 A, 2 A 5 25 °C 0.12 0.5 A 2 75 °C V GS = 4 V 0.08 1 0.5 A, 1 A, 2 A 10 V 0.5 0.04 V DS = 10 V Pulse Test 0 0.2 –40 0 40 80 120 160 0.2 0.5 1 2 5 10 20 Case Temperature Tc (°C) Drain Current I D (A) 4

HAT2010F Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 500 10000 Reverse Recovery Time trr (ns) 3000 200 Capacitance C (pF) 100 1000 Ciss 50 300 Coss 100 20 di/dt = 20 A/µs Crss 10 30 V GS = 0, Ta = 25°C VGS = 0 10 f = 1 MHz 5 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 20 2000 V GS = 4 V, V DD = 10 V V GS (V) I D = 3.5 A V DS (V) 1000 PW = 3 µs, duty < 1 % 40 16 500 Switching Time t (ns) V DD = 5 V 200 tr Gate to Source Voltage Drain to Source Voltage 30 V 10 V 12 100 DS 25 V tf 50 20 V GS 8 t d(off) 20 t d(on) 10 10 V DD = 25 V 4 5 10 V 5V 2 0 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 Gate Charge Qg (nc) Drain Current I D (A) 5

HAT2010F Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 8 V GS = 0, –5 V 4 5V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 6

ADE–208–370 (Z) HAT3001F Silicon N Channel / P Channel Complementary Power MOS FET 2nd Edition Jun. 1995 Application SOP–8 Power switching 5 7 6 8 Features 4 7 8 5 6 3 1 2 • Low on–resistance D D D D • Capable of 2.5V gate drive • Low drive current 4 2 • High density mounting G G Ordering Information 1, 3 Source 2, 4 Gate S1 S3 5, 6, 7, 8 Drain ———————————————————— MOS1 MOS2 Hitachi Cord FP–8D ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ———————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 ±10 V ——————————————————————————————————————————— Drain current ID 2.5 –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) 1

HAT3001F Table 2 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.1 0.15 Ω ID = 2A resistance VGS = 4V * ———————————————————————— — 0.13 0.22 Ω ID = 2A VGS = 2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2 4 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 380 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 200 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 70 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 80 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 0.8 — V IF = 2.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 45 — ns IF = 2.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT3001F Table 2 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.16 Ω ID = –2 A resistance VGS = –4 V * ———————————————————————— — 0.17 0.24 Ω ID = –2 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 720 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 345 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 16 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — 100 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — 120 — ns ———————————————————————————————— Fall time tf — 100 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –0.9 — V IF = –2.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 100 — ns IF = –2.5 A, VGS = 0 recovery time diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test 3

HAT3001F(N channel) Power vs. Temperature Derating Maximum Safe Operation Area 2.0 100 Test Condition : When using the glass epoxy board 30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 10 1 3 m PW s Channel Dissipation Drain Current 2 DC 10 = 1 Dr 1.0 Op m s iv e Operation in er ati Op 1 0.3 on Dr this area is er iv ** at e limited by R DS(on) ion 0.5 Op 0.1 er at ion 0.03 Ta = 25 °C 1 shot pulse 0.01 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 10 V 2.5 V 8 6V 8 (A) I D (A) 4V Tc = 75°C –25°C 3V ID 6 6 25°C 2V Drain Current Drain Current 4 4 VGS = 1.5 V 2 2 V DS = 10 V Pulse Test Pulse Test 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4

HAT3001F(N channel) Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current 0.5 1 V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Pulse Test 0.5 0.4 0.2 VGS = 2.5 V Drain to Source Voltage 0.3 0.1 4V 0.2 ID=2A 0.05 0.1 1A 0.02 0.5 A 0.01 0 2 4 6 8 10 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 50 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance 0.25 Pulse Test R DS(on) ( Ω) V DS = 10 V 0.5 A 20 Pulse Test 1A 0.20 2A 10 75 °C V GS = 2.5 V 0.15 25 °C 5 I D = 0.5 A, 1 A, 2 A 0.10 Tc = –25 °C 2 4V 0.05 1 0 0.5 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 Case Temperature Tc (°C) Drain Current I D (A) 5

HAT3001F(N channel) Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 di/dt = 20 A/µs VGS = 0 Reverse Recovery Time trr (ns) 500 V GS = 0, Ta = 25°C f = 1 MHz 3000 Capacitance C (pF) 200 1000 Ciss 100 300 Coss 50 100 Crss 30 20 10 10 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 50 10 500 V GS (V) V DS (V) V DD = 5 V 40 10 V 8 200 tr Switching Time t (ns) 25 V 100 t d(off) Gate to Source Voltage Drain to Source Voltage 30 6 V DS tf V GS 50 20 4 I D = 2.5 A 20 t d(on) 10 V DD = 25 V 2 10 10 V V GS = 4 V, V DD = 10 V 5V PW = 3 µs, duty < 1 % 0 5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current I D (A) 6

HAT3001F(N channel) Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 5V V GS = 0, –5 V 4 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 7

HAT3001F(P channele) Power vs. Temperature Derating Maximum Safe Operation Area 2.0 –100 Test Condition : When using the glass epoxy board –30 Pch (W) 10 µs 100 µs I D (A) (40 x 40 x 1.6 mm) 1.5 –10 1 –3 PW m s Channel Dissipation Drain Current = 2 DC 10 Dr 1.0 –1 Op m ive Operation in er s 1 Op Dr –0.3 this area is at ion er ive ** at Op limited by R DS(on) ion 0.5 –0.1 er at ion –0.03 Ta = 25 °C –0.01 1 shot pulse 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics –10 V –5 V –10 –10 –4 V Pulse Test –3.5 V 25 °C –3 V –2.5 V –8 (A) –8 I D (A) Tc = –25 °C 75 °C ID –6 –6 Drain Current Drain Current –2 V –4 –4 –2 –2 VGS = –1.5 V V DS = –10 V Pulse Test 0 0 –1 –2 –3 –4 –5 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 8

HAT3001F(P channele) Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance Gate to Source Voltage vs. Drain Current –0.5 1 Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test Drain to Source Saturation Voltage V DS(on) (V) 0.5 –0.4 0.2 VGS = –2.5 V –0.3 0.1 I D = –2 A –4 V –0.2 0.05 –0.1 –1 A 0.02 –0.5 A Pulse Test 0.01 0 –2 –4 –6 –8 –10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current Static Drain to Source on State Resistance 0.5 20 Forward Transfer Admittance |y fs | (S) R DS(on) ( Ω) Pulse Test 10 0.4 Tc = –25 °C 5 0.3 I D = –2 A –1 A –0.5 A 25 °C 2 V GS = –2.5 V 75 °C 0.2 1 –2 A, –1 A, –0.5 A 0.5 0.1 –4 V V DS = –10 V 0 0.2 Pulse Test –40 0 40 80 120 160 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current I D (A) 9

HAT3001F(P channele) Body–Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 1000 10000 Reverse Recovery Time trr (ns) 500 3000 Capacitance C (pF) 200 1000 Ciss 100 300 Coss 50 100 Crss 20 30 di / dt = 20 A / µs VGS = 0 VGS = 0, Ta = 25 °C f = 1 MHz 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 0 –10 –20 –30 –40 –50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics 0 0 500 V GS (V) V DS (V) V DD = –5 V –10 V –10 –25 V –2 200 t d(off) Switching Time t (ns) 100 Gate to Source Voltage Drain to Source Voltage V GS –20 –4 tf V DS 50 tr V DD = –25 V –30 –6 –10 V t d(on) –5 V 20 –40 –8 10 V GS = –4 V, V DD = –10 V PW = 3 µs, duty < 1 % –50 I D = –2.5 A –10 5 0 4 8 12 16 20 –0.1 –0.2 –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current I D (A) 10

HAT3001F(P channel) Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test Reverse Drain Current I DR (A) 8 6 5V V GS = 0, –5 V 4 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions Unit : mm • SOP–8 5.25 Max 5 4.55 Max 8 1 4 6.8 Max 2.00 Max 2.03 Max + 0.05 0.20 – 0.02 0.75 Max 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8D 0.12 M EIAJ SC–527–8A JEDEC — 11

HAT1020R Target Specification Silicon P Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1, 2, 3 Source Ordering Information 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S S 1 2 3 Hitachi Code FP–8DA ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –4.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –18 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –4.5 A ——————————————————————————————————————————— Channel dissipation Pch** 2.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using surface mounted on FR4 board 1

HAT1020R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.05) 0.07 Ω ID = –3A resistance VGS = –10V * ———————————————————————— — (0.09) 0.13 Ω ID = –3A VGS = –4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (5.0) (8.0) — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (670) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (440) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (170) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (35) — ns VGS = –4 V, ID = –3 A ———————————————————————————————— Rise time tr — (200) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (35) — ns ———————————————————————————————— Fall time tf — (60) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (–0.8) — V IF = –4.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (60) — ns IF = –4.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1020R Power vs. Temperature Derating 4.0 Pch** (W) 3.0 Channel Dissipation 2.0 1.0 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT1023R Target Specification Silicon P Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 2.5V gate drive • Low drive current • High density mounting 4 G 1, 2, 3 Source Ordering Information 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S S 1 2 3 Hitachi Code FP–8DA ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –6.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –26 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –6.5 A ——————————————————————————————————————————— Channel dissipation Pch** 2.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using surface mounted on FR4 board 1

HAT1023R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.023) 0.04 Ω ID = –3A resistance VGS = –4V * ———————————————————————— — (0.04) 0.06 Ω ID = –3A VGS = –2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (6) (10) — S ID = –3 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (1200) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (900) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (350) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (20) — ns VGS = –4 V, ID = –3 A ———————————————————————————————— Rise time tr — (300) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (350) — ns ———————————————————————————————— Fall time tf — (400) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (–0.8) — V IF = –6.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (200) — ns IF = –6.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1023R Power vs. Temperature Derating 4.0 Pch** (W) 3.0 Channel Dissipation 2.0 1.0 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT1024R Target Specification Silicon P Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 3 4 1 2 • Low on–resistance 7 8 5 6 • Capable of 4V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Code FP–8DA MOS1 MOS2 ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 2.0 W ——————————————————————————————————————————— Channel dissipation Pch** 1.3 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board 1

HAT1024R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.18) 0.25 Ω ID = –2A resistance VGS = –10V * ———————————————————————— — (0.25) 0.4 Ω ID = –2A VGS = –4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (2.5) (4.0) — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (250) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (150) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (60) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — (70) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (15) — ns ———————————————————————————————— Fall time tf — (20) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (–0.9) — V IF = –2.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (50) — ns IF = –2.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1024R Power vs. Temperature Derating 2.0 *** Pch* (W) 1.5 ** Channel Dissipation 1.0 0.5 0 50 100 150 200 * When using surface mounted on FR4 board ** 1 Drive Operation Ambient Temperature Ta (°C) *** 2 Drive Operation Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT1025R Target Specification Silicon P Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 3 4 1 2 • Low on–resistance 7 8 5 6 • Capable of 2.5V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Code FP–8DA MOS1 MOS2 ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –20 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 V ——————————————————————————————————————————— Drain current ID –4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –16 A ——————————————————————————————————————————— Channel dissipation Pch*** 2.0 W ——————————————————————————————————————————— Channel dissipation Pch** 1.3 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board 1

HAT1025R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –20 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.09) 0.11 Ω ID = –2A resistance VGS = –4V * ———————————————————————— — (0.135) 0.19 Ω ID = –2A VGS = –2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (4.0) (6.0) — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (530) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (350) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (150) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (20) — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time tr — (90) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (110) — ns ———————————————————————————————— Fall time tf — (100) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (–0.9) — V IF = –4A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (150) — ns IF = –4A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT1025R Power vs. Temperature Derating 2.0 *** Pch* (W) 1.5 ** Channel Dissipation 1.0 0.5 0 50 100 150 200 * When using surface mounted on FR4 board ** 1 Drive Operation Ambient Temperature Ta (°C) *** 2 Drive Operation Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT2016R Target Specification Silicon N Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 3 4 1 2 • Low on–resistance 7 8 5 6 • Capable of 4V gate drive D D D D • Low drive current • High density mounting 4 2 G G Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S3 5, 6, 7, 8 Drain S1 Hitachi Code FP–8DA MOS1 MOS2 ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Channel dissipation Pch*** 2.0 W ——————————————————————————————————————————— Channel dissipation Pch** 1.3 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board 1

HAT2016R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.04) 0.05 Ω ID = 3A resistance VGS = 10V * ———————————————————————— — (0.055) 0.08 Ω ID = 3A VGS = 4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (4.0) (6.5) — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (350) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (220) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (85) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (15) — ns VGS = 4 V, ID = 3 A ———————————————————————————————— Rise time tr — (100) — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — (40) — ns ———————————————————————————————— Fall time tf — (35) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (0.8) — V IF = 5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (50) — ns IF = 5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2016R Power vs. Temperature Derating 2.0 *** Pch* (W) 1.5 ** Channel Dissipation 1.0 0.5 0 50 100 150 200 * When using surface mounted on FR4 board Ambient Temperature Ta (°C) ** 1 Drive Operation *** 2 Drive Operation Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT2020R Target Specification Silicon N Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1, 2, 3 Source Ordering Information 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S S 1 2 3 Hitachi Code FP–8DA ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 2 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using surface mounted on FR4 board 1

HAT2020R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.026) 0.03 Ω ID = 4A resistance VGS = 10V * ———————————————————————— — (0.04) 0.05 Ω ID = 4A VGS = 4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (6) (10) — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (570) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (370) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (140) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (20) — ns VGS = 4 V, ID = 4 A ———————————————————————————————— Rise time tr — (160) — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — (65) — ns ———————————————————————————————— Fall time tf — (60) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (0.8) — V IF = 7A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (60) — ns IF = 7A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2020R Power vs. Temperature Derating 4.0 Pch** (W) 3.0 Channel Dissipation 2.0 1.0 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT2022R Target Specification Silicon N Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 4 3 5 6 7 8 1 2 • Low on–resistance D D D D • Capable of 4V gate drive • Low drive current • High density mounting 4 G 1, 2, 3 Source Ordering Information 4 Gate 5, 6, 7, 8 Drain ———————————————————— S S S 1 2 3 Hitachi Code FP–8DA ———————————————————— EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch** 2.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** When using surface mounted on FR4 board 1

HAT2022R Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.011) 0.0135 Ω ID = 5A resistance VGS = 10V * ———————————————————————— — (0.016) 0.02 Ω ID = 5A VGS = 4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (11) (18) — S ID = 5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (1250) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (820) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (300) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (35) — ns VGS = 4 V, ID = 5 A ———————————————————————————————— Rise time tr — (250) — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — (140) — ns ———————————————————————————————— Fall time tf — (120) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (0.8) — V IF = 10A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (90) — ns IF = 10A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT2022R Power vs. Temperature Derating 4.0 Pch** (W) 3.0 Channel Dissipation 2.0 1.0 0 50 100 150 200 Ambient Temperature Ta (°C) Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 3

HAT3004R Target Specification Silicon N and P Channel Power MOS FET 2nd. Edition May. 1995 Preliminary Application SOP–8 High speed power switching 5 7 6 8 Features 4 3 1 2 • Low on–resistance • Capable of 4V gate drive 7 8 5 6 • Low drive current D1 D2 • High density mounting 2 4 G1 G2 Ordering Information 1, 3 Source 2, 4 Gate ———————————————————— S2 5, 6, 7, 8 Drain S1 Hitachi Code FP–8DA 1 3 ———————————————————— Nch Pch EIAJ Code — ———————————————————— JEDEC Code MS–012AA ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ———————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 3.5 –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 14 –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 2.0 W ——————————————————————————————————————————— Channel dissipation Pch** 1.3 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation : *** 2 Drive operation When using surface mounted on FR4 board 1

HAT3004R (N channel) Table 2 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.08) 0.1 Ω ID = 2A resistance VGS = 10V * ———————————————————————— — (0.11) 0.15 Ω ID = 2A VGS = 4V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (2.0) (3.0) — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — (180) — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — (110) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (45) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — (60) — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — (25) — ns ———————————————————————————————— Fall time tf — (20) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (0.8) — V IF = 3.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (50) — ns IF = 3.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 2

HAT3004R (P channel) Table 2 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — (0.13) 0.25 Ω ID = –1 A resistance VGS = –10 V * ———————————————————————— — (0.2) 0.4 Ω ID = –1 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| (2.0) (3.0) — S ID = –1 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — (250) — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — (150) — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — (60) — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — (10) — ns VGS = –4 V, ID = –1 A ———————————————————————————————— Rise time tr — (60) — ns VDD = –10 V ———————————————————————————————— Turn–off delay time td(off) — (20) — ns ———————————————————————————————— Fall time tf — (25) — ns ——————————————————————————————————————————— Body–drain diode forward VDF — (–0.8) — V IF = –2.5A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — (50) — ns IF = –2.5A, VGS = 0 recovery time diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test 3

HAT3004R Power vs. Temperature Derating 2.0 *** Pch* (W) 1.5 ** Channel Dissipation 1.0 0.5 0 50 100 150 200 * When using surface mounted on FR4 board ** 1 Drive Operation Ambient Temperature Ta (°C) *** 2 Drive Operation Package Dimensions Unit : mm • SOP–8 5.2 Max 8 5 4.05 Max 1 4 6.3 Max 1.75 Max 0.05 0.20 + 0.02 0.75 Max – 0 – 10 ° 0.25 0.60 + 0.18 0.10 ± 0.10 – 1.27 + 0.10 0.40 – 0.05 0.1 Hitachi Code FP–8DA 0.12 M EIAJ — JEDEC MS-012AA 4

4AJ11 Silicon P Channel Power MOS FET Array Application SP–12 High speed power switching Features • Low on–resistance 1 1,5,8,12 ; Gate RDS(on)≤ 0.13Ω, VGS = –10V, ID = –4A 2,4,9,11 ; Drain RDS(on)≤ 0.17Ω, VGS = –4V, ID = –4A 3,6,7,10 ; Source • Capable of 4V gate drive 12 • Low drive current 2 4 9 11 • High speed switching • High density mounting 1 5 8 12 • Suitable for motor driver and solenoid driver and lamp driver • Discrete packaged devices of same die 3 6 7 10 2SJ173, 2SJ176, 2SJ219 L , 2SJ219 S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –8 A ——————————————————————————————————————————— Channel dissipation Pch(Tc = 25 °C)** 28 W ——————————————————————————————————————————— Channel dissipation Pch** 4 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Devices operation 1

4AJ11 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.09 0.13 Ω ID = –4 A resistance VGS = –10 V * ———————————————————————— — 0.12 0.17 Ω ID = –4 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.5 7.7 — S ID = –4 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 720 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = –8 A ———————————————————————————————— Rise time tr — 120 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 220 — ns RL = 3.75 Ω ———————————————————————————————— Fall time tf — 160 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.05 — V IF = –8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 190 — µs IF = –8 A, VGS = 0, recovery time dIF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curves of 2SJ173, 2SJ176. 2

4AJ11 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 30 Condition : Channel dissipation of Condition : Channel dissipation of each die is idetical each die is idetical Pch (W) Pch (W) 5 4 Device Operation 4 Device Operation 3 Device Operation 3 Device Operation 4 20 2 Device Operation 2 Device Operation Channel Dissipation Channel Dissipation 1 Device Operation 3 1 Device Operation 2 10 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Tc (°C) 3

4AK23 Silicon N Channel Power MOS FET Array Application SP–12TA High speed power switching Features • Low on–resistance 1, 5, 8, 12 ; Gate 1 RDS(on)≤ 0.25Ω, VGS = 10V, ID = 2.5A 2, 4, 9, 11 ; Drain 3, 6, 7, 10 ; Source • Low drive current • High speed switching 12 2 4 9 11 • High density mounting • Suitable for H–bridged motor driver 1 5 8 12 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 100 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Channel dissipation Pch(Tc = 25 °C)** 32 W ——————————————————————————————————————————— Channel dissipation Pch** 4 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Devices operation 1

4AK23 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.2 0.25 Ω ID = 2.5A resistance VGS = 10 V * ———————————————————————— — 0.25 0.35 Ω ID = 2.5 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3 5 — S ID = 2.5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 525 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 205 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 5 — ns ID = 2.5 A ———————————————————————————————— Rise time tr — 30 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 180 — ns RL = 12 Ω ———————————————————————————————— Fall time tf — 65 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — µs IF = 5 A, VGS = 0, recovery time dIF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristeic Curves of 2SK1300 2

4AK23 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 48 Condition : Channel Dissipation of Condition : Channel Dissipation of Channel Dissipation Pch (W) Channel Dissipation Pch (W) each die is identical each die is identical 4 Device Operation 4 Device Operation 4 3 Device Operation 32 3 Device Operation 2 Device Operation 2 Device Operation 1 Device Operation 1 Device Operation 2 16 0 50 100 150 0 50 100 150 Ambient Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area 50 20 10 µs 10 10 Drain Current I D (A) 0 n) µs n PW tio is (o 1 5 ra rea DS m = s pe a 10 O his by R DC 2 m t s in ited O (1 pe Sh 1 lim ra tio ot ) n 0.5 (T c = 25 0.2 °C Ta = 25°C ) 0.1 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) 3

4AK25 Silicon N Channel Power MOS FET Array Application SP–10 High speed power switching Features • Low on–resistance 1 1, 10 ; Source RDS(on)≤ 0.45Ω, VGS = 10V, ID = 1A 2, 4, 6, 8 ; Gate • Low drive current 3, 5, 7, 9 ; Drain • High speed switching 10 • High density mounting 3 5 7 9 2 4 6 8 1 10 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 1.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 4.5 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 1.5 A ——————————————————————————————————————————— Channel dissipation Pch(Tc = 25 °C)** 2.4 W ——————————————————————————————————————————— Channel dissipation Pch** 3.6 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Devices operation 1

4AK25 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.35 0.45 Ω ID = 1A resistance VGS = 10 V * ———————————————————————— — 0.47 0.65 Ω ID = 1 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 140 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 70 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 20 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 3 — ns ID = 1 A ———————————————————————————————— Rise time tr — 12 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 50 — ns RL = 30 Ω ———————————————————————————————— Fall time tf — 30 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.1 — V IF = 1.5 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 70 — µs IF = 1.5 A, VGS = 0, recovery time dIF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristeic Curves of 2SK975 2

4AK25 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 30 Condition : Channel Dissipation of Condition : Channel Dissipation of Channel Dissipation Pch (W) Channel Dissipation Pch (W) each die is identical each die is identical 4 Device Operation 4 Device Operation 4 3 Device Operation 20 3 Device Operation 2 Device Operation 2 Device Operation 1 Device Operation 1 Device Operation 2 10 0 50 100 150 0 50 100 150 Ambient Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area 10 10 µs n n) 3 tio is (o 10 ra rea S 0 PW pe a Drain Current I D (A) µs D 1 O his y R = m 1 t db s 10 in ite D c= m C (T lim s O 25 (1 pe °C Sh 0.3 ra ) ot tio ) n 0.1 Ta = 25°C 0.03 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V) 3

4AK26 Silicon N Channel Power MOS FET Array Application SP–12 High speed power switching Features 1,5,8,12 ; Gate • Low on–resistance 2,4,9,11 ; Drain RDS(on)≤ 0.06Ω, VGS = 10V, ID = 5A 1 3,6,7,10 ; Source RDS(on)≤ 0.075Ω, VGS = 4V, ID = 5A • Capable of 4V gate drive • Low drive current 12 • High speed switching 2 4 9 11 • High density mounting 1 5 8 12 • Suitable for motor driver and solenoid driver and lamp driver 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 A ——————————————————————————————————————————— Channel dissipation Pch(Tc = 25 °C)** 28 W ——————————————————————————————————————————— Channel dissipation Pch** 4 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Devices operation 1

4AK26 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.045 0.06 Ω ID = 5A resistance VGS = 10 V * ———————————————————————— — 0.056 0.075 Ω ID = 5 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 12 — S ID = 5 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 720 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns ID = 10 A ———————————————————————————————— Rise time tr — 95 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 300 — ns RL = 3 Ω ———————————————————————————————— Fall time tf — 170 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.05 — V IF = 10 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 110 — µs IF = 10 A, VGS = 0, recovery time dIF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

4AK26 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 30 Condition : Channel dissipation of Condition : Channel dissipation of each die is idetical Pch (W) each die is idetical Pch (W) 5 4 Device Operation 4 Device Operation 3 Device Operation 3 Device Operation 4 20 2 Device Operation 2 Device Operation Channel Dissipation Channel Dissipation 1 Device Operation 3 1 Device Operation 2 10 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Tc (°C) 3

4AM14 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS (on) ≤ 0.17 Ω, VGS = 10 V 1 ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V Nch 2 4 12 ID = –4 A • Capable of 4 V gate drive 1 5 • Low drive current • Hight speed switching 1, 5, 8, 12 ; Gate 2, 4, 9, 11 ; Drain • High density mounting 3 6 3, 6, 7, 10 ; Source • Suitable for H-bridged motor driver 9 11 Pch • Discrete packaged devices of same die N-channel: 2SK970 (TO-220AB), 8 12 2SK1093 (TO-220FM) P-channel: 2SJ172 (TO-220AB), 2SJ175 (TO-220FM) 7 10 Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ––––––––––––––––––––– Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 8 –8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 –32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 –8 A ——————————————————————————————————————————— Channel dissipation Pch (Tc =25°C)** 32 W ——————————————————————————————————————————— Channel dissipation Pch** 4 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 devices operation 1

4AM14 Table 2 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel P channel ————————————————— Item Symbol Min Typ Max Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source V(BR)DSS 60 — — –60 — — V ID = 10 mA, VGS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source V(BR)GSS ±20 — — ±20 — — V IG = ±100 µA, VDS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source IGSS — — ±10 — — ±10 µA VGS = ±16 V, VDS = 0 leak current ——————————————————————————————————————————— Zero gate voltage IDSS — — 250 — — –250 µA VDS = 50 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source VGS(off) 1.0 — 2.0 –1.0 — –2.0 V ID = 1 mA, VDS = 10 V cutoff voltage ——————————————————————————————————————————— Static drain to RDS(on) — 0.13 0.17 — 0.15 0.2 Ω ID = 4 A, VGS = 10 V * source on state ————————————————————————————————— resistance — 0.18 0.24 0.20 0.27 Ω ID = 4 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer |yfs| 3.5 5.5 — 3.5 6.0 — S ID = 4 A *VDS = 10 V * admittance ——————————————————————————————————————————— Input capacitance Ciss — 400 — — 900 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— f = 1 MHz Output capacitance Coss — 220 — — 460 — pF ———————————————————————————————— Reverse transfer Crss — 60 — — 130 — pF capacitance ——————————————————————————————————————————— Turn–on delay time td(on) — 5 — — 8 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— RL = 7.5 Ω Rise time tr — 45 — — 50 — ns ———————————————————————————————— Turn–off delay time td(off) — 150 — — 180 — ns ———————————————————————————————— Fall time tf — 85 — — 95 — ns ——————————————————————————————————————————— Body–drain diode VDF — 1.2 — — –1.2 — V IF = 8 A, VGS = 0 forward voltage ——————————————————————————————————————————— Body–drain diode trr — 120 — — 185 — ns IF = 8 A, VGS = 0, reverse recovery time dIF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test Note: Polarity of test conditions for P channel device is reversed. s Nch : See characteristeic curves of 2SK970 s Pch : See characteristeic curves of 2SJ172 2

4AM14 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 48 Condition : Channel dissipation of Condition : Channel dissipation of each die is identical each die is identical 5 4 Device Operation 4 Device Operation Channel Dissipation Pch (W) Channel Dissipation Pch (W) 3 Device Operation 3 Device Operation 4 2 Device Operation 32 2 Device Operation 1 Device Operation 1 Device Operation 3 2 16 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Ta (°C) Maximum Safe Operation Area Maximum Safe Operation Area (N-channel) (P-channel) 50 – 50 10 µs 30 – 30 10 µs 10 10 0 0 PW 1 µs 10 1 µs – 10 m m = s PW 10 Drain Current I D (A) s Drain Current I D (A) m = D s 10 D –3 C (1 3 C O m pe sh s O ot (1 pe ra ) tio sh r at n ot 1 io –1 (T ) n c (T = c 25 = Operation in this area Operation in this area 25 °C 0.3 °C – 0.3 is limited by RDS (on) ) is limited by RDS (on) ) Ta = 25°C Ta = 25°C 0.1 – 0.1 0.05 – 0.05 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 – 10 – 30 – 100 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) 3

4AM15 Silicon N Channel/P Channel Power MOS FET Array Application SP–12TA High speed power switching Features 1 1, 5, 8, 12 ; Gate • Low on–resistance 2, 4, 9, 11 ; Drain N Channel : RDS(on) ≤ 0.5Ω, 3, 6, 7, 10 ; Source 12 VGS = 10V , ID = 2A Nch Pch P Channel : RDS(on) ≤ 0.9Ω, 2 4 9 11 VGS = -10V , ID = -2A 1 5 8 12 • Low drive current • High speed switching • High density mounting 3 6 7 10 • Suitable for H–bridged motor driver Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ——————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 200 –200 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 4 –4 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 16 –16 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 4 –4 A ——————————————————————————————————————————— Channel dissipation Pch** 32 W (Tc = 25 °C) ———————————————————————— Pch** 4.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Device Operation 1

4AM15 Table 2 Electrical Characteristics (Ta = 25°C) N Channel —————————— Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 200 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.33 0.5 Ω ID = 2 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.5 2.5 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 750 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 260 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 40 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 19 — ns ID = 2 A ———————————————————————————————— Rise time tr — 26 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 45 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 24 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 125 — ns IF =4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test s See characteristic curve of 2SK1957 and 2SJ410 2

4AM15 Table 3 Electrical Characteristics (Ta = 25°C) P Channel —————————— Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –200 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –160 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.7 0.9 Ω ID = –2 A, VGS = –10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.0 3.0 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 920 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 290 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 70 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns ID = –2 A ———————————————————————————————— Rise time tr — 40 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 85 — ns RL = 15 Ω ———————————————————————————————— Fall time tf — 45 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –4 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — ns IF =–4 A, VGS = 0, recovery time diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test 3

4AM15 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 48 Condition : Channel Dissipation Condition : Channel Dissipation of each die is identical of each die is identical Channel Dissipation Pch (W) Channel Dissipation Pch (W) 4 Device Operation 4 Device Operation 3 Device Operation 3 Device Operation 4 32 2 Device Operation 2 Device Operation 1 Device Operation 1 Device Operation 2 16 0 50 100 150 0 50 100 150 Ambient Temperature Ta (°C) Case Temperature Tc (°C) 4

4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 1, 5, 8, 12 ; Gate • Low on–resistance 2, 4, 9, 11 ; Drain N Channel : RDS(on) ≤ 0.17Ω, 12 3, 6, 7, 10 ; Source VGS = 10V , ID = 4A Nch Pch P Channel : RDS(on) ≤ 0.2Ω, 2 4 9 11 VGS = -10V , ID = -4A 1 5 8 12 • High speed switching • High density mounting • Suitable for H–brided motor driver 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ——————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 -60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 8 -8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 -32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 -8 A ——————————————————————————————————————————— Channel dissipation Pch** 28 W (Tc = 25 °C) ———————————————————————— Pch** 4.0 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 4 Device Operation 1

4AM16 Table 2 Electrical Characteristics (Ta = 25°C) N Channel —————————— Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.13 0.17 Ω ID = 4 A, VGS = 10 V * ———————————————————————— resistance — 0.18 0.24 ID = 4 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 5.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 400 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 220 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 5 — ns ID = 4 A ———————————————————————————————— Rise time tr — 45 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 150 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 85 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.2 — V IF = 8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 120 — ns IF =8 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK970 2

4AM16 Table 3 Electrical Characteristics (Ta = 25°C) P Channel —————————— Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.15 0.20 Ω ID = –4 A, VGS = –10 V * ———————————————————————— resistance — 0.20 0.27 ID = –4 A, VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.5 6.0 — S ID = –4 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 900 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 460 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 130 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 8 — ns ID = –4 A ———————————————————————————————— Rise time tr — 50 — ns VGS = –10 V ———————————————————————————————— Turn–off delay time td(off) — 180 — ns RL = 7.5 Ω ———————————————————————————————— Fall time tf — 95 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.2 — V IF = –8 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 185 — ns IF =–8 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SJ172 3

4AM16 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 60 Pc (W) Pc (W) Condition : Channel dissipation of Condition : Channel dissipation of each die is is idetical each die is is idetical 5 4 Device Operation 4 Device Operation 3 Device Operation Collector Power Dissipation Collector Power Dissipation 4 3 Device Operation 20 2 Device Operation 2 Device Operation 1 Device Operation 3 1 Device Operation 2 10 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Maximum Safe Operation Area (N–channel) (P–channel) 50 –50 10 10 20 µs –20 µs 10 10 I D (A) I D (A) 10 PW 0 –10 PW 0 µs µs 1 = m = 1 5 10 s –5 10 m s m m D D Drain Current Drain Current s s C C 2 (1 –2 (1 O O sh sh pe pe ra ra 1 Operation in ot –1 ot tio tio ) Operation in ) n n this area is (T (T 0.5 limited by R DS(on) –0.5 this area is c c = = limited by R DS(on) 25 25 °C °C 0.2 –0.2 ) ) 0.1 –0.1 Ta = 25 °C Ta = 25 °C 0.05 –0.05 0.1 0.3 1 3 10 30 100 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 4

6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features 1 : Nch Source 2, 8, 9 : Nch Gate • Low on-resistance 3, 7,10 : Nch Drain N-channel: RDS (on) ≤ 0.17 Ω, VGS = 10 V 1 : Pch Drain 4, 6,11 : Pch Gate ID = 4 A 5, 12 : Pch Source P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V 5 12 12 ID = –4 A • Capable of 4 V gate drive Pch • Low drive current • Hight speed switching 4 6 11 • High density mounting • Suitable for H-bridged motor driver 3 7 10 Nch • Discrete packaged devices of same die N-channel: 2SK970 (TO-220AB), 2 8 9 2SK1093 (TO-220FM) P-channel: 2SJ172 (TO-220AB), 2SJ175 (TO-220FM) 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ––––––––––––––––––––– Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 7 –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 –28 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 7 –7 A ——————————————————————————————————————————— Channel dissipation Pch (Tc =25°C)** 42 W ——————————————————————————————————————————— Channel dissipation Pch** 4.8 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 6 devices operation 1

6AM12 Table 2 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel P channel ————————————————— Item Symbol Min Typ Max Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source V(BR)DSS 60 — — –60 — — V ID = 10 mA, VGS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source V(BR)GSS ±20 — — ±20 — — V IG = ±100 µA, VDS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source IGSS — — ±10 — — ±10 µA VGS = ±16 V, VDS = 0 leak current ——————————————————————————————————————————— Zero gate voltage IDSS — — 250 — — –250 µA VDS = 50 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source VGS(off) 1.0 — 2.0 –1.0 — –2.0 V ID = 1 mA, VDS = 10 V cutoff voltage ——————————————————————————————————————————— Static drain to RDS(on) — 0.13 0.17 — 0.15 0.2 Ω ID = 4 A, VGS = 10 V * source on state ————————————————————————————————— resistance — 0.19 0.24 — 0.20 0.27 Ω ID = 4 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer |yfs| 3.5 5.5 — 3.5 6.0 — S ID = 4 A *VDS = 10 V * admittance ——————————————————————————————————————————— Input capacitance Ciss — 400 — — 900 — pF VDS = 10 V, VGS = 0 ———————————————————————————————— f = 1 MHz Output capacitance Coss — 220 — — 460 — pF ———————————————————————————————— Reverse transfer Crss — 60 — — 130 — pF capacitance ——————————————————————————————————————————— Turn–on delay time td(on) — 5 — — 8 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— RL = 7.5 Ω Rise time tr — 45 — — 50 — ns ———————————————————————————————— Turn–off delay time td(off) — 150 — — 170 — ns ———————————————————————————————— Fall time tf — 80 — — 95 — ns ——————————————————————————————————————————— Body–drain diode VDF — 1.1 — — –1.05 — V IF = 7 A, VGS = 0 forward voltage ——————————————————————————————————————————— Body–drain diode trr — 110 — — 180 — ns IF = 7 A, VGS = 0, reverse recovery time dIF/dt = 50 A/µs ——————————————————————————————————————————— Note: Polarity of test conditions for P channel device is reversed. * Pulse Test s Nch : See characteristic curves of 2SK970 s Pch : See characteristic curves of 2SJ172 2

6AM12 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 60 Condition : Channel dissipation of Condition : Channel dissipation of each die is identical each die is identical 5 6 Device Operation 6 Device Operation Channel Dissipation Pch (W) Channel Dissipation Pch (W) 4 Device Operation 4 Device Operation 4 2 Device Operation 40 2 Device Operation 1 Device Operation 1 Device Operation 3 2 20 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Ta (°C) Maximum Safe Operation Area Maximum Safe Operation Area (N-channel) (P-channel) 50 – 50 10 µs 30 – 30 10 µs 10 10 0 0 – 10 10 µs 1 µs PW PW m s 1 Drain Current I D (A) Drain Current I D (A) = m = 10 s 10 D C m 3 m –3 O s s D pe (1 (1 C sh ra sh O tio pe ot ot ) n ) ra 1 –1 (T tio c n = (T Operation in this area 25 c °C = Operation in this area is limited by RDS (on) ) – 0.3 25 0.3 is limited by RDS (on) °C ) Ta = 25°C Ta = 25°C 0.1 – 0.1 0.05 – 0.05 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 – 10 – 30 – 100 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) 3

6AM13 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features 1 : Nch Source 2, 8, 9 : Nch Gate • Low on-resistance 3, 7,10 : Nch Drain N-channel: RDS (on) ≤ 0.075 Ω, VGS = 10 V 1 : Pch Drain 4, 6,11 : Pch Gate ID = 5 A 5, 12 : Pch Source P-channel: RDS (on) ≤ 0.12 Ω, VGS = –10 V 5 12 12 ID = –5 A • Capable of 4 V gate drive Pch • Low drive current • Hight speed switching 4 6 11 • High density mounting • Suitable for H-bridged motor driver 3 7 10 Nch • Discrete packaged devices of same die N-channel: 2SK971 (TO-220AB), 2 8 9 2SK1094 (TO-220FM) P-channel: 2SJ173 (TO-220AB), 2SJ176 (TO-220FM) 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ––––––––––––––––––––– Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 10 –10 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 –40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 10 –10 A ——————————————————————————————————————————— Channel dissipation Pch (Tc =25°C)** 42 W ——————————————————————————————————————————— Channel dissipation Pch** 4.8 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 6 devices operation 1

6AM13 Table 2 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel P channel ————————————————— Item Symbol Min Typ Max Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source V(BR)DSS 60 — — –60 — — V ID = 10 mA, VGS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source V(BR)GSS ±20 — — ±20 — — V IG = ±100 µA, VDS = 0 breakdown voltage ——————————————————————————————————————————— Gate to source IGSS — — ±10 — — ±10 µA VGS = ±16 V, VDS = 0 leak current ——————————————————————————————————————————— Zero gate voltage IDSS — — 250 — — –250 µA VDS = 50 V, VGS = 0 drain current ——————————————————————————————————————————— Gate to source VGS(off) 1.0 — 2.0 –1.0 — –2.0 V ID = 1 mA, VDS = 10 V cutoff voltage ——————————————————————————————————————————— Static drain to RDS(on) — 0.06 0.075 — 0.09 0.12 Ω ID = 5 A, VGS = 10 V * source on state ————————————————————————————————— resistance — 0.08 0.11 — 0.12 0.18 Ω ID = 5 A, VGS = 4 V * ——————————————————————————————————————————— Forward transfer |yfs| 6 9.5 — 5 8 — S ID = 5 A, VDS = 10 V * admittance ——————————————————————————————————————————— Input capacitance Ciss — 860 — — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— f = 1 MHz Output capacitance Coss — 450 — — 720 — pF ———————————————————————————————— Reverse transfer Crss — 140 — — 220 — pF capacitance ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — — 15 — ns ID = 5 A, VGS = 10 V, ———————————————————————————————— RL = 6 Ω Rise time tr — 50 — — 100 — ns ———————————————————————————————— Turn–off delay time td(off) — 180 — — 250 — ns ———————————————————————————————— Fall time tf — 110 — — 160 — ns ——————————————————————————————————————————— Body–drain diode VDF — 1.0 — — –1.0 — V IF = 10 A, VGS = 0 forward voltage ——————————————————————————————————————————— Body–drain diode trr — 120 — — 200 — ns IF = 10 A, VGS = 0, reverse recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test Note: Polarity of test conditions for P channel device is reversed. s Nch : See characteristic curves of 2SK971 s Pch : See characteristic curves of 2SJ173 2

6AM13 Maximum Channel Dissipation Curve Maximum Channel Dissipation Curve 6 60 Condition : Channel dissipation of Condition : Channel dissipation of each die is identical each die is identical 5 6 Device Operation 6 Device Operation Channel Dissipation Pch (W) Channel Dissipation Pch (W) 4 Device Operation 4 Device Operation 4 2 Device Operation 40 2 Device Operation 1 Device Operation 1 Device Operation 3 2 20 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Ta (°C) Maximum Safe Operation Area Maximum Safe Operation Area (N-channel) (P-channel) 50 – 50 10 30 10 – 30 µs µs 10 0 10 0 µs µs PW PW 10 – 10 1 1 m m = = s s Drain Current I D (A) Drain Current I D (A) 10 10 m m D C s s 3 D –3 (1 (1 C O pe sh sh O ra pe ot ot tio ) ) ra n 1 tio –1 (T n c (T = c 25 = Operation in this area °C Operation in this area 25 is limited by RDS (on) 0.3 is limited by RDS (on) °C – 0.3 ) ) Ta = 25°C Ta = 25°C 0.1 – 0.1 0.05 – 0.05 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 – 10 – 30 – 100 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) 3

6AM14 Silicon N Channel / P Channel Power MOS FET Array 1st. Edition Jun. 1995 Application SP-12TA Hgh speed power switching 1 : Nch Source Features 2, 8, 9 : Nch Gate 3, 7,10 : Nch Drain • Low on–resistance : Pch Drain 1 • Low drive current 4, 6,11 : Pch Gate • High speed switching 5, 12 : Pch Source • High density mounting 12 5 12 Pch 4 6 11 3 7 10 Nch 2 8 9 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ———————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 ±20 V ——————————————————————————————————————————— Drain current ID 7 –7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 –28 A ——————————————————————————————————————————— Reverse drain current IDR 7 –7 A ——————————————————————————————————————————— Channel dissipation Pch** 42 W ——————————————————————————————————————————— Channel dissipation Pch** 4.8 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at 6 Drive operation

6AM14 Table 2 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.14 0.2 Ω ID = 4A resistance VGS = 4V * ———————————————————————— — 0.22 0.5 Ω ID = 2A VGS = 2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 500 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 240 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 30 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns VGS = 10 V, ID = 4 A ———————————————————————————————— Rise time tr — 90 — ns RL = 7.5 Ω ———————————————————————————————— Turn–off delay time td(off) — 110 — ns ———————————————————————————————— Fall time tf — 250 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 7A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 170 — ns IF = 7A, VGS = 0 recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2

6AM14 Table 2 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state RDS(on) — 0.12 0.16 Ω ID = –4 A resistance VGS = –4 V * ———————————————————————— — 0.16 0.3 Ω ID = –2 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 8.0 — S ID = –4 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 590 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 120 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns VGS = –10 V, ID = –4 A ———————————————————————————————— Rise time tr — 75 — ns RL = 7.5 Ω ———————————————————————————————— Turn–off delay time td(off) — 240 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body–drain diode forward VDF — –1.0 — V IF = –7 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 210 — ns IF = –7 A, VGS = 0 recovery time diF / dt = 50A / µs ——————————————————————————————————————————— * Pulse Test 3

6AM14 Maximum Channel Power Maximum Channel Power Dissipation Curve Dissipation Curve 6 60 Pch (mW) Pch (mW) 5 6 Drive Operation 6 Drive Operation 4 Drive Operation 4 Drive Operation 4 40 Channel Power Dissipation Channel Power Dissipation 2 Drive Operation 2 Drive Operation 1 Drive Operation 1 Drive Operation 3 2 20 1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) Case Temperature Tc (°C) 4

ADE–208–253 (Z) THERMAL FET HAF2001 Silicon N Channel MOS FET Series 1st. Edition Jun 1995 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down capability sensing to the junction temperature. D This FET has the built–in over temperature shut– down circuit in the gate area. And this ciruit 1 2 operation to shut–down the gate voltage in case of 3 high junction temperature like applying over G Gate resistor power consumption, over curretn etc. • Logic level operation (4 to 6 V Gate drive) Tempe– Latch Gate • High endurance capability against to the short rature Circuit Shut– circuit Sencing down • Built–in the over temperature shut–down circuit Circuit Circuit • Latch type shut–down operation (Need 0 voltage recovery) S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS+ 16 V ——————————————————————————————————————————— Gate to source voltage VGSS- –2.8 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 40 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10µs, duty cycle < 1 % ** Value at Tc = 25°C 1

HAF2001 Table 2 Typical Operation Characteristics Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Input voltage VIH 3.5 — — V ————————————————————————————— VIL — — 1.2 V ——————————————————————————————————————————— Input current IIH — — 100 µA Vi = 8 V, VDS = 0 (Gate non shut down) ————————————————————————————— IIL — — 50 µA Vi = 3.5 V, VDS = 0 ————————————————————————————— II — — 1 µA Vi = 1.2 V, VDS = 0 ——————————————————————————————————————————— Input current IIH(sd)1 — 0.3 — mA Vi = 8 V, VDS = 0 (Gate shut down) ————————————————————————————— IIH(sd)2 — 0.1 — mA Vi = 3.5 V, VDS = 0 ——————————————————————————————————————————— Shut down temperature Tsd — 175 — °C Channel temperature ——————————————————————————————————————————— 2

HAF2001 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain current ID1 10 — — A VGS = 3.5 V, VDS = 10 V ————————————————————————————— Drain current ID2 — — 10 mA VGS = 1.2 V, VDS = 10 V ——————————————————————————————————————————— Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS + 16 — — V IG = 300 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS – –2.8 — — V IG = –100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS + 1 — — 100 µA VGS = 8 V, VDS = 0 ————————————————————————————— IGSS + 2 — — 50 µA VGS = 3.5 V, VDS = 0 ————————————————————————————— IGSS + 3 — — 1 µA VGS = 1.2 V, VDS = 0 ————————————————————————————— IGSS – — — –100 µA VGS = –2.4 V, VDS = 0 ——————————————————————————————————————————— Input current (shut down) IGS(op)1 — 0.3 — mA VGS = 8 V, VDS = 0 ————————————————————————————— IGS(op)2 — 0.1 — mA VGS = 3.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cut off voltage VGS(off) 1.2 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state RDS(on) — 50 65 mΩ ID = 10 A , VGS = 4 V resistance ————————————————————————————— RDS(on) — 30 43 mΩ ID = 10 A , VGS = 10 V ——————————————————————————————————————————— Forward transfer admittance |yfs| 6 12 — S ID = 10 A VDS = 10 V ——————————————————————————————————————————— Output capacitance Coss — 630 — pF VDS = 10 V , VGS = 0 f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7.5 — µs ID = 5 A ———————————————————————————————— Rise time tr — 29 — µs VGS = 5 V ———————————————————————————————— Turn–off delay time td(off) — 34 — µs RL = 6 Ω ———————————————————————————————— Fall time tf — 26 — µs ——————————————————————————————————————————— Body–drain diode forward VDF — 1.0 — V IF = 20 A, VGS = 0 voltage ——————————————————————————————————————————— Body–drain diode reverse trr — 110 — ns IF = 20 A, VGS = 0, recovery time diF / dt = 50 A / µs ——————————————————————————————————————————— Over load shut down tos1 — 1.8 — ms VGS = 5 V, VDD = 12 V operation time ————————————————————————————— (Note 1) tos2 — 0.7 — ms VGS = 5 V, VDD = 24 V ——————————————————————————————————————————— (Note 1) Including the junction temperature taise of the over loaded condition. 3

HAF2001 Power vs. Temperature Derating Maximum Safe Operation Area 80 500 Thermal shut down 200 Operation area Pch (W) I D (A) 100 20 µs 60 50 10 0 µs 20 1 Channel Dissipation m Drain Current DC PW s 40 10 Op = er 10 5 at m ion s (T 20 2 Operation in this area c= is limited by RDS(on) 25 1 °C ) 0.5 Ta = 25 °C 0.3 0 50 100 150 200 0.5 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 10 V Pulse Test 8V V DS = 10 V Pulse Test 40 6V 40 I D (A) (A) 5V Tc = –25 °C ID 30 30 4V 25 °C Drain Current Drain Current 75 °C 20 3.5 V 20 VGS = 3 V 10 10 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4

HAF2001 Drain to Source Saturation Voltage vs. Static Drain to Source State Resistance Gate to Source Voltage vs. Drain Current 2.0 0.5 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Pulse Test 1.6 0.2 1.2 0.1 I D = 20 A V GS = 4 V 0.8 0.05 10 A V GS = 8 V 0.4 0.02 5A 0.01 0 2 4 6 8 10 1 2 5 10 20 50 100 200 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance Forward Transfer Admittance vs. vs. Temperature Drain Current 100 Static Drain to Source on State Resistance Forward Transfer Admittance |yfs| (S) 0.10 V DS = 10 V R DS(on) ( Ω) Pulse Test 50 Pulse Test 0.08 I D = 20 A V GS = 4 V 10 A 20 Tc = –25 °C 0.06 5A 10 25 °C 10 A 0.04 5A 5 75 °C I D = 20 A V GS = 8 V 0.02 2 0 1 –40 0 40 80 120 160 0.5 1 2 5 10 20 50 Case Temperature Tc (°C) Drain Current I D (A) 5

HAF2001 Body–Drain Diode Reverse Switching Characteristics Recovery Time 1000 1000 V GS = 5 V, V DD = 30 V 500 PW = 300 µs, duty < 1 % Reverse Recovery Time trr (ns) 500 di / dt = 50 A / µs Switching Time t (µs) V GS = 0, Ta = 25 °C 200 200 t d(off) 100 100 tf 50 50 tr 20 20 t d(on) 10 10 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 Reverse Drain Current I DR (A) Drain Current I D (A) Reverse Drain Current vs. Typical Capacitance vs. Souece to Drain Voltage Drain to Source Voltage 50 10000 Pulse Test Reverse Drain Current I DR (A) Capacitance C (pF) 40 1000 30 VGS = 5 V Coss 0V 20 100 10 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 Source to Drain Voltage V SD (V) Drain to Source Voltage V DS (V) 6

HAF2001 Gate to Source Voltage vs. Shutdown Case Temperature vs. Shutdown Time of Load–Short Test 10 Gate to Source Voltage 200 V GS (V) Shutdown Case Temperature Tc (°C) V DD= 36 V 8 I D= 5 A 24 V 180 12 V Gate to Source Voltage 6 9V 160 4 140 2 120 0 0.1 0.2 0.5 1 2 5 10 20 50 100 100 0 2 4 6 8 10 Shutdown Time of Load–Short Test Gate to Source Voltage V GS (V) Pw (mS) Test Circuit TTL Drive Characteristics RL 10 1.0 ID=5A 8 0.8 II + Input Current I I (mA) D•U•T Input Voltage V I (V) – Rg 6 0.6 VCC HD74LS08 V I =5V VI 4 0.4 ID 5A II 2 0.2 0 0 0 VI 0.01 0.03 0.1 0.3 1 3 10 0 Gate Series Resistance R G (k Ω) II 0 Thermal shut down 7

HAF2001 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c 0.1 0.05 θ ch – c = 2.50 °C/W, Tc = 25 °C 2 0.0 PDM PW D= .01 e T 0.03 0 p uls PW h ot 1s T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform VGS Monitor Vout Monitor 90% D.U.T. RL VGS 10% VGS V DD Vout 10% 50Ω 10% 5V = 30 V 90% 90% td(on) tr td(off) tf 8

HAF2001 Package Dimensions Unit : mm • HDPAK 11.5 max f 3.6 + 0.08 0.1 4.8 max 3.0max 9.8 max – 1.27 7.6 min 1.5 max 6.3 min 15.3 max 18.5 ±0.5 1.5 max 12.7 min 0.5 7.8 ±0.5 0.76 ±0.1 2.5 ±0.5 2.7 max Hitachi Code TO–220AB 5.1 ±0.5 EIAJ SC–46 JEDEC — 9

PM4550J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) G2 Item Symbol Rating Unit ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 450 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 50 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 120 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 50 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 120 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 250 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dielectric ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM4550J Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 450 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 500 µA VDS = 360 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 3.5 4.5 V ID = 25 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on state RDS(on) — 0.14 0.18 Ω ID = 25 A, VGS = 10 V*1 resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 30 — S ID = 25 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 6600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––– f = 1 MHz Output capacitance Coss — 1550 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 250 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 45 — ns ID = 25 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––– Rg = 50 Ω Rise time tr — 270 — RL = 1.2 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 250 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 140 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 1.6 — V IF = 50 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 130 — ns IF = 50 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1. Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 200 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM4550J Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 Channel Dissipation Pch (W) 10 100 µs 10 Drain Current I D (A) PW 1 0µ = ms s 200 DC 10 10 (T O m in a p s n = er tio is 25 at e ra rea y °C ion 1 Op is a ed b n) ) 100 th mit (o li DS R 0.1 PM5050J Ta = 25°C PM4050J 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature T C (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 VGS = 10 V VDS = 10 V Pulse Test Pulse Test 40 40 Drain Current I D (A) Drain Current I D (A) VGS = 6 V 30 30 VGS = 5 V Ta = 75°C 20 20 Ta = 25°C VGS = 4.5 V 10 10 VGS = 4 V Ta = –25°C 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

PM4550J Drain to Source Saturation Voltage Static Drain to Source on State Static Drain to Source Resistance RDS (on) (Ω ) vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (V) 10 1.0 Pulse Test ID = 50 A Pulse Test 8 0.3 V GS = 10, 15 V 6 0.1 4 ID = 20 A 0.03 2 ID = 10 A 0.01 0 2 4 6 8 10 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.5 100 Ta = –25°C Forward Admittance | yfs | (S) State Resistance RDS (on) ( Ω) VGS = 10 V V DS = 10 V 0.4 Pulse Test Pulse Test Static Drain to Source on I D = 20 A 10 25°C 0.3 I D = 50 A 75°C 0.2 1 I D = 10 A 0.1 0 0.1 –40 0 40 80 120 0.1 1 10 100 Case Temperature TC (°C) Drain Current I D (A) 4

PM4550J Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 Reverse Recovery Time t rr (ns) di/dt = 100A/ µs, VGS = 0 V 10000 Ciss 300 Pulse Test Capacitance C (pF) Coss 100 1000 Crss 100 30 VGS = 0 V f = 1 MHz 10 10 0.1 1 10 100 0 10 20 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V 400 200 V 16 1000 Switching Time t (ns) VDS 300 V t d (off) 300 12 VDD = 300 V tr 200 V tf 200 100 V 8 100 t d (on) 100 4 VGS I D = 25 A VGS = 10 V Pulse Test duty < 1% 0 10 0 40 80 120 160 200 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM4550J Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 VGS = 0, –5 V 20 10 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γ (t) Normalized Transient Thermal Impedance vs. Pulse Width D=1 1 0.5 0.2 0.1 0.1 θ ch – C (t) = γ (t) · θ ch – C 0.05 θ ch – C = 0.5°C/W, TC = 25°C 0.02 PDM 0.01 0.01 se pul ot PW sh PW D= 1 T T 0.001 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

PM4550J Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 80 ± 0.6 2- φ 5.5 ± 0.3 (23) (23) 3-M5 Screw G2 S2 35 Max (24) (19) (27) S1 JAPAN S1 D2 S2 D1 G1 (12) 95 Max (19) (7) (16) (7) (19) (2.8) 31 Max 7

PM4575J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) Item Symbol Rating Unit G2 ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 450 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 75 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 180 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 75 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 180 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 300 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dielectric ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM4575J Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 450 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 500 µA VDS = 360 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 3.7 4.44 V ID = 37 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on RDS(on) — 0.10 0.12 Ω ID = 37 A, VGS = 10 V*1 state resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 45 — S ID = 37 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 9600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––– f = 1 MHz Output capacitance Coss — 2300 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 330 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 100 — ns ID = 37 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––– Rg = 50 Ω Rise time tr — 310 — RL = 1 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 550 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 135 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 1.8 — V IF = 75 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 130 — ns IF = 75 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1. Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 200 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM4575J Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 Channel Dissipation Pch (W) 10 µs 100 10 0µ Drain Current I D (A) 1 P m s 200 DC W = s (T O 10 10 a p = er ms n ni 25 at °C ion a tio a is ) er re y 1 Op is a d b ) t h ite (on 100 lim DS R PM5075J 0.1 Ta = 25°C PM4575J 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature T C (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 VGS = 10 V VDS = 10 V Pulse Test Pulse Test 80 80 Drain Current I D (A) Drain Current I D (A) VGS = 6 V 60 60 40 VGS = 5 V 40 Ta = 75°C 20 VGS = 4.5 V 20 Ta = 25°C Ta = –25°C VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

PM4575J Drain to Source Saturation Voltage Static Drain to Source on State Static Drain to Source Resistance RDS (on) (Ω ) vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (V) 10 1.0 Pulse Test Pulse Test 8 ID = 75 A 0.3 6 V GS = 10, 15 V 0.1 ID = 37 A 4 ID = 20 A 0.03 2 0.01 0 2 4 6 8 10 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.5 100 Ta = –25°C Forward Admittance | yfs | (S) State Resistance RDS (on) ( Ω) VDS = 10 V 0.4 Pulse Test VGS = 10 V 25°C Static Drain to Source on Pulse Test I D = 37 A 10 0.3 75°C I D = 75 A 0.2 1 0.1 I D = 20 A 0 0.1 –40 0 40 80 120 0.1 1 10 100 Case Temperature Tc (°C) Drain Current I D (A) 4

PM4575J Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 Reverse Recovery Time t rr (ns) di/dt = 100A/ µs, VGS = 0 V 10000 Ciss 300 Pulse Test Capacitance C (pF) Coss 100 1000 Crss 100 30 VGS = 0 V f = 1 MHz 10 10 0.1 1 10 100 0 10 20 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V t d (off) 400 200 V 16 1000 Switching Time t (ns) VDS 300 V tr 300 12 VDD = 300 V tf 200 V 200 100 V 8 100 t d (on) 100 4 VGS I D = 37 A VGS = 10 V Pulse Test duty < 1% 10 0 40 80 120 160 200 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM4575J Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 VGS = 0, –5 V 40 20 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ (t) D=1 1 0.5 0.2 0.1 0.1 θ ch – C (t) = γ (t) · θ ch – C 0.05 θ ch – C = 0.385°C/W, TC = 25°C 0.02 PDM 0.01 e 0.01 puls h ot 1s PW D= PW T T 0.001 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

PM4575J Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 80 ± 0.6 2- φ 5.5 ± 0.3 (23) (23) 3-M5 Screw G2 S2 35 Max (24) (19) (27) S1 JAPAN S1 D2 S2 D1 G1 (12) 95 Max (19) (7) (16) (7) (19) (2.8) 31 Max 7

PM45100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. Rg G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) Rg G2 Item Symbol Rating Unit ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 450 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 100 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 240 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 100 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 240 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 400 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dielectric ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM45100K Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 450 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 1 mA VDS = 360 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 4.0 5.0 V ID = 50 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on RDS(on) — 0.08 0.10 Ω ID = 50 A, VGS = 10 V*1 state resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 55 — S ID = 50 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 14600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––– f = 1 MHz Output capacitance Coss — 3500 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 650 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 200 — ns ID = 50 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––– Rg = 50 Ω Rise time tr — 690 — RL = 0.6 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 760 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 260 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 1.6 — V IF = 100 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 140 — ns IF = 100 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1 Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 380 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM45100K Power vs. Temperature Derating Maximum Safe Operation Area 600 1000 Channel Dissipation Pch (W) 10 µs 100 PW 10 1m 0 µ Drain Current I D (A) =1 0m s s 400 D s (T C O (1 sh 10 in = pe ot) ion C rat ea is 25 ra e °C tio Op is ar by ) n th ited n) 1 lim S (o 200 RD PM45100K 0.1 Ta = 25°C PM50100K 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature T C (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 VGS = 10 V Pulse Test VDS = 20 V Pulse Test 80 80 VGS = 6 V Drain Current I D (A) Drain Current I D (A) 60 60 VGS = 5 V 40 40 Ta = 75°C 20 VGS = 4.5 V 20 VGS = 4 V Ta = 25°C Ta = –25°C 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

PM45100K Drain to Source Saturation Voltage Static Drain to Source on State Static Drain to Source Resistance RDS (on) (Ω ) vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (V) 10 1.0 Pulse Test ID = 100 A 8 Pulse Test 0.3 6 0.1 4 50 A V GS = 10, 15 V 0.03 2 20 A 0.01 0 2 4 6 8 10 1 10 100 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.5 100 VDS = 10 V Forward Admittance | yfs | (S) State Resistance RDS (on) ( Ω) VGS = 10 V Pulse Test 0.4 Pulse Test Static Drain to Source on Ta = –25°C 10 0.3 25°C 50 A 0.2 75°C 1 I D = 100 A VDS = 10 V 0.1 Pulse Test 20 A 0 –40 0 40 80 120 0.1 1 10 100 Case Temperature Tc (°C) Drain Current I D (A) 4

PM45100K Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 di/dt = 100A/ µs, VGS = 0 V Reverse Recovery Time t rr (ns) Ciss Pulse Test Capacitance C (pF) 10000 300 Coss 100 1000 Crss 100 30 VGS = 10 V f = 1 MHz 10 10 0 10 20 30 40 0.1 1 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 3000 Drain to Source Voltage VDS (V) VDD = 100 V t d (off) 200 V 1000 400 16 Switching Time t (ns) 300 V tr VDS tf 300 VDD = 300 V 12 300 200 V t d (on) 100 V 100 200 8 100 4 30 VGS = 10 V VGS I D = 50 A duty < 1% Pulse Test 10 0 80 160 240 320 400 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM45100K Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 VGS = 0, –5 V 40 20 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ (t) D=1 1 0.5 0.2 0.1 0.1 θ ch – C (t) = γ (t) · θ ch – C 0.05 θ ch – C = 0.312°C/W, TC = 25°C 0.02 PDM 0.01 lse 0.01 t pu 1 sho PW PW D= T T 0.001 100 µ 1m 10 m 100 m 1 10 Pulth Width PW (s) 6

PM45100K Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 3-M5 Screw 80 ± 0.6 4- φ 5.5 ± 0.3 (23) (23) S1 S2 D1 D2 S2 G2 48 ± 0.6 62 Max (30) (21) (11) G1 S1 JAPAN (6.5) (12) 95 Max (18) (7) (16) (7) (18) (2.8) 31Max 7

PM45150K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. Rg G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) Rg G2 Item Symbol Rating Unit ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 450 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 150 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 360 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 150 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 360 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 500 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dissipation ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM45150K Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 450 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 1 mA VDS = 360 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 4.5 6.0 V ID = 75 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on RDS(on) — 0.06 0.08 Ω ID = 75 A, VGS = 10 V*1 state resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 80 — S ID = 75 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 22600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Output capacitance Coss — 4600 — f = 1 MHz ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 580 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 280 — ns ID = 75 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Rise time tr — 820 — Rg = 50 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 1190 — RL = 0.4 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 400 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 2.0 — V IF = 150 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 140 — ns IF = 150 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1. Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 380 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM45150K Power vs. Temperature Derating Maximum Safe Operation Area 800 1000 10 µs Channel Dissipation Pch (W) 10 0µ 100 PW 1 m s 600 Drain Current I D (A) DC = s (T O 10 a p m = er s 10 in 25 at ion s °C ion 400 at ea i ) er r y Op is a ed b n) 1 h it (o t m li DS R 200 PM50150K 0.1 Ta = 25°C PM40150K 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 200 200 VGS = 10 V Pulse Test VDS = 10 V 160 VGS = 6 V 160 Drain Current I D (A) Pulse Test Drain Current I D (A) 120 120 80 80 VGS = 5 V Ta = 75°C 40 VGS = 4.5 V 40 Ta = 25°C Ta = –25°C VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3

PM45150K Drain to Source Saturation Voltage Static Drain to Source on State Static Drain to Source Resistance RDS (on) (Ω ) vs. Gate to Source Voltage Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (V) 12 1.0 ID = 150 A Pulse Test 10 Pulse Test 0.3 8 6 0.1 ID = 75 A 4 ID = 50 A V GS = 10, 15 V 0.03 2 0.01 0 2 4 6 8 10 1 10 100 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 0.5 1000 VDS = 10 V Forward Admittance | yfs | (S) State Resistance R DS (on) (Ω ) 0.4 Pulse Test VGS = 10 V Static Drain to Source on Ta = –25°C Pulse Test 100 0.3 25°C I D = 75 A 0.2 75°C 10 I D = 150 A 0.1 I D = 50 A 0 1 –40 0 40 80 120 1 10 100 1000 Case Temperature TC (°C) Drain Current I D (A) 4

PM45150K Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 Reverse Recovery Time t rr (ns) di/dt = 100A/ µs, VGS = 0 V 10000 Ciss 300 Pulse Test Capacitance C (pF) Coss 100 1000 Crss 30 100 VGS = 0 V f = 1 MHz 10 10 0.1 1 10 100 1000 0 10 20 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 10000 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V Switching Time t (ns) 400 200 V 16 t d (off) VDS 300 V 1000 tr 300 12 VDD = 300 V tf 200 V 200 100 V 8 t d (on) 100 100 4 VGS = 10 V VGS I D = 75 A duty < 1% Pulse Test 0 10 0 80 160 240 320 400 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM45150K Reverse Drain Current vs. Source to Drain Voltage 200 Reverse Drain Current IDR (A) Pulse Test 160 120 VGS = 0, –5 V 80 40 VGS = 10 V 0 1.0 2.0 3.0 4.0 5.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ (t) D=1 1 0.5 0.2 0.1 0.1 θ ch – C (t) = γ (t) • θ ch – C 0.05 θ ch – C = 0.25°C/W, TC = 25°C 0.02 PDM 0.01 pulse 0.01 hot 1s PW PW D= T T 0.001 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

PM45150K Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 3-M5 Screw 80 ± 0.6 4- φ 5.5 ± 0.3 (23) (23) S1 S2 D1 D2 S2 G2 48 ± 0.6 62 Max (30) (21) (11) G1 S1 JAPAN (6.5) (12) 95 Max (18) (7) (16) (7) (18) (2.8) 31Max 7

PM5050J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) G2 Item Symbol Rating Unit ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 500 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 50 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 120 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 50 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 120 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 250 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dielectric ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM5050J Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 500 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 500 µA VDS = 400 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 3.5 4.5 V ID = 25 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on RDS(on) — 0.14 0.18 Ω ID = 25 A, VGS = 10 V*1 state resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 30 — S ID = 25 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 6600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––– f = 1 MHz Output capacitance Coss — 1550 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 250 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 45 — ns ID = 25 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––– Rg = 50 Ω Rise time tr — 270 — RL = 1.2 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 250 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 140 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 1.6 — V IF = 50 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 130 — ns IF = 50 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1. Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 200 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM5050J Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 Channel Dissipation Pch (W) 10 100 10 µs Drain Current ID (A) 1 0µ DC PW m s 200 Op = s 10 ea era 10 ar n) tio n( m s his (o t Ta in R DS =2 n 5°C a tio d by ) 1 er ite 100 Op lim is PM5050J 0.1 PM4550J Ta = 25°C 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature T C (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 VGS = 10 V Pulse Test VDS = 10 V Pulse Test 40 40 Drain Current I D (A) Drain Current ID (A) VGS = 6 V 30 30 VGS = 5 V Ta = 75°C 20 20 Ta = 25°C VGS = 4.5 V 10 10 Ta = –25°C VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

PM5050J Static Drain to Source Resistance RDS (on) ( Ω) Drain to Source Saturation Voltage Static Drain to Source on State Drain to Source Saturation Voltage VDS (V) vs.Gate to Source Voltage Resistance vs. Drain Current 10 1.0 Pulse Test I D = 50 A Pulse Test 8 0.3 VGS = 10,15 V 6 0.1 4 I D = 20 A 2 I D = 10 A 0.03 0.01 0 2 4 6 8 10 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Forward Transfer Admittance Resistance vs.Temperature vs. Drain Current 0.5 100 State Resistance RDS (on) ( Ω) Ta = –25°C Static Drain to Source on V GS = 10 V Forward Admittance |yfs | 0.4 V DS = 10 V Pulse Test Pulse Test I D = 20 A 25°C 10 0.3 I D = 50 A 75°C 0.2 1 I D = 10 A 0.1 0 –40 0 40 80 120 0.1 0.1 1 10 100 Case Temperature TC (°C) Drain Current ID (A) 4

PM5050J Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 Reverse Recovery Time t rr (ns) di/dt = 100 A/µs,VGS = 0 V Pulse Test Capacitance C (pF) 300 10000 Ciss Coss 100 1000 Crss 30 100 VGS = 0 V f = 1 MHz 10 10 0.1 1 10 100 0 10 20 30 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) VDD = 100 V 400 200 V 16 1000 Switching Time t (ns) V DS 300 V 300 VDD = 300 V 12 t d (off) 200 V tr 100 V tf 200 8 100 I D = 25 A t d (on) Pulse Test 100 4 VGS VGS = 10 V duty < 1% 0 10 0 40 80 120 160 200 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM5050J Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 VGS = 0,–5 V 20 10 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γ (t) Normalized Transient Thermal Impedance vs.Pulse Width D=1 1 0.5 0.2 0.1 θ ch – C (t) = γ (t) · θ ch – C 0.1 θ ch – C = 0.5°C/W,TC = 25°C 0.05 PDM 0.02 0.01 0.01 lse t pu PW D =PW T sho T 1 0.001 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

PM5050J Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 80 ± 0.6 2- φ 5.5 ± 0.3 (23) (23) 3-M5 Screw G2 S2 35 Max (24) (19) (27) S1 JAPAN S1 D2 S2 D1 G1 (12) 95 Max (19) (7) (16) (7) (19) (2.8) 31 Max 7

PM5075J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1 and etc. G1 Absolute Maximum Ratings S1 S1/D2 (Ta = 25°C) (Per FET chip) Item Symbol Rating Unit G2 ––––––––––––––––––––––––––––––––––––––––– S2 S2 Drain source V(BR)DSS 500 V voltage Symbol Electrode Terminals Remarks ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Gate source V(BR)GSS ±30 V S1 Source 1 M5 screw Power terminal voltage ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain current ID 75 A D1 Drain 1 M5 screw Power terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Drain peak ID(peak) 180 A S2 Source 2 M5 screw Power terminal current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– D2 Drain 2 M5 screw Power terminal Body-drain IDR 75 A –––––––––––––––––––––––––––––––––––––– diode reverse G1 Gate 1 # 110 Signal terminal drain current –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Body-drain IDR(peak) 180 A S1 Source 1 # 110 Signal terminal diode reverse –––––––––––––––––––––––––––––––––––––– peak current G2 Gate 2 # 110 Signal terminal ––––––––––––––––––––––––––––––––––––––––– –––––––––––––––––––––––––––––––––––––– Channel Pch*1 300 W S2 Source 2 # 110 Signal terminal dissipation –––––––––––––––––––––––––––––––––––––– ––––––––––––––––––––––––––––––––––––––––– Channel Tch 150 °C temperature ––––––––––––––––––––––––––––––––––––––––– Storage Tstg –45 to +125 °C temperature ––––––––––––––––––––––––––––––––––––––––– Insulation Viso*2 2000 Vrms dielectric ––––––––––––––––––––––––––––––––––––––––– Notes: 1. Value at Ta = 25 °C 2. Base to terminals AC minute 1

PM5075J Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test Condition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source V(BR)DSS 500 — — V ID = 10 mA, VGS= 0 V breakdown voltage ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source leak current IGSS — — ±10 µA VGS = ± 25 V, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain leak current IDSS — — 500 µA VDS = 400 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Gate-source threshold voltage VGS(th) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Drain-source saturation voltage VDS(on) — 3.7 4.44 V ID = 37 A, VGS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Static Drain-source on RDS(on) — 0.10 0.12 Ω ID = 37 A, VGS = 10 V*1 state resistance ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Forward transfer admittance yfs  — 45 — S ID = 37 A, VDS = 10 V*1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Input capacitance Ciss — 9600 — pF VDS = 10 V, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––– f = 1 MHz Output capacitance Coss — 2300 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Reverse transfer capacitance Crss — 330 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-on delay time td(on) — 100 — ns ID = 37 A, VGS = 10 V ––––––––––––––––––––––––––––––––––––––––––––––––––– Rg = 50 Ω Rise time tr — 310 — RL = 1 Ω ––––––––––––––––––––––––––––––––––––––––––––––––––– Turn-off delay time td(off) — 550 — ––––––––––––––––––––––––––––––––––––––––––––––––––– Fall time tf — 135 — ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode forward voltage VDF — 1.8 — V IF = 75 A, VGS = 0 V ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Body-drain diode reverse trr — 130 — ns IF = 75 A, VGS = 0 V recovery time di/dt = 100 A/µs ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Note: 1. Pulse Test Mechanical characteristics Item Symbol Condition Rating Unit ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Fixing strength — Mounting into main-terminal with M4 screw 1.45 to 1.95 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– — Mounting into heat sink with M5 screw 1.95 to 2.9 N-m ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Weight — Typical value 200 g ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2

PM5075J Power vs. Temperature Derating Maximum Safe Operation Area 300 1000 Channel Dissipation Pch (W) 10 µs 100 10 Drain Current I D ( A ) 0 DC 1m µs PW s 200 a O 10 re ) pera = i s a on tio 10 m th S ( n( s in R D Ta i on by = at d 25 1 er ite °C Op lim ) 100 is 0.1 PM5075J Ta = 25°C PM4575J 0.01 0 50 100 150 0.1 1 10 100 1000 Case Temperature T C (°C) Drain to Source Voltage VDS ( V ) Typical Output Characteristics Typical Transfer Characteristics 100 100 VGS = 10 V VDS = 10 V Pulse Test Pulse Test 80 80 Drain Current I D ( A ) Drain Current I D (A) VGS = 6 V 60 60 Ta = 75°C 40 VGS = 5 V 40 Ta = 25°C 20 VGS = 4.5 V 20 Ta = –25°C VGS = 4 V 0 4 8 12 16 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3

PM5075J Drain to Source Saturation Voltage Static Drain to Source Resistance R DS (on) (Ω ) Static Drain to Source on State Drain to Source Saturation Voltage V DS (V) vs. Gate to Source Voltage Resistance vs. Drain Current 10 1.0 Pulse Test 8 I D = 75 A Pulse Test 0.3 6 VGS = 10,15 V I D = 37 A 0.1 4 I D = 20 A 2 0.03 0.01 0 2 4 6 8 10 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current 100 0.5 Ta = –25°C Forward Admittance | yfs | (S) VDS = 10 V VGS = 10 V 0.4 Pulse Test Pulse Test 25°C 10 0.3 I D = 37 A 75°C I D = 75 A 0.2 1 0.1 I D = 20 A 0 0.1 –40 0 40 80 120 0.1 1 10 100 Case Temperature TC (°C) Drain Current I D (A) 4

PM5075J Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 100000 Reverse Recovery Time t rr (ns) di / dt = 100 A / µs,VGS = 0 V Ciss Pulse Test 10000 Capacitance C (PF) 300 Coss 100 1000 Crss 30 100 VGS = 0 V f = 1 MHz 10 10 0.1 1 10 100 0 10 20 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 400 16 1000 t d (off) Switching Time t (ns) VDS VDD = 100 V 200 V tr 300 12 300 V VDD = 300 V tf 200 200 V 8 100 100 V t d (on) 100 4 VGS I D = 37 A VGS = 10 V Pulse Test duty < 1% 0 10 0 40 80 120 160 200 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 5

PM5075J Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test Reverse Drain Current I DR (A) 80 60 VGS = 0,–5 V 40 20 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ (t) D=1 1 0.5 0.2 0.1 0.1 θ ch – C (t) = γ (t) · θ ch – C 0.05 θ ch – C = 0.417°C/W, TC = 25°C 0.02 PDM 0.01 e 0.01 puls hot 1s PW D= PW T T 0.001 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 6

PM5075J Switching Time Test Circuit Wave Forms 90 % Vin Monitor Vout Monitor 10 % D.U.T Vin RL 90 % P.G. Vout 90 % Vin 50 Ω 10 V VDD .. 30 V = 10 % 10 % t f (on) tr t d (off) tf Package Dimensions Unit: mm (7) 80 ± 0.6 2- φ 5.5 ± 0.3 (23) (23) 3-M5 Screw G2 S2 35 Max (24) (19) (27) S1 JAPAN S1 D2 S2 D1 G1 (12) 95 Max (19) (7) (16) (7) (19) (2.8) 31 Max 7

PM50100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features Pin Arrangement • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain • Isolated base from Terminal • Suitable for motor driver, switching regulator D1