PM50150K
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t
rr
(ns)
di/dt = 100A/
µ
s, V
GS
= 0 V
Pulse Test
100000
Typical Capacitance
vs. Drain to Source Voltage
Capacitance C (pF)
300
100
10000
Ciss
1000
Coss
30
100
V
GS
= 0 V
f = 1 MHz
10
0
10
20
Crss
10
0.1
1
10
100
1000
30
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
400
V
DS
300
200
100
V
DD
= 100 V
200 V
300 V
V
DD
= 300 V
200 V
100 V
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
400
10000
Switching Time t (ns)
Switching Characteristics
t
d (off)
1000
t
r
t
f
t
d (on)
100
V
GS
= 10 V
duty < 1%
10
0.1
1
10
100
V
GS
80
160
I
D
= 75 A
Pulse Test
240
320
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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