PM50100K
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t
rr
(ns)
di/dt = 100 A/
µ
s
V
GS
= 0 V
Pulse Test
100000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
300
Capacitance C (PF)
10000
Coss
1000
Crss
100
V
GS
= 10 V
f = 1 MHz
100
30
10
0.1
10
1
10
100
0
10
20
30
40
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
400
V
DS
300
V
DD
200
100
V
DD
= 100 V
200 V
= 300 V 300 V
200 V
100 V
I
D
= 50 A
Pulse Test
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
400
Switching Characteristics
3000
1000
t
r
300
100
V
GS
= 10 V
duty < 1%
t
f
t
d (on)
t
d (off)
Switching Time t (ns)
30
10
0.1
V
GS
80
160
0
240
320
1
10
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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