PM45100K
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t
rr
(ns)
Capacitance C (pF)
di/dt = 100A/
µ
s, V
GS
= 0 V
Pulse Test
300
100000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
V
GS
= 10 V
f = 1 MHz
10
100
30
10
0.1
1
10
100
Reverse Drain Current I
DR
(A)
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
400
V
DS
300
200
100
V
DD
= 300 V
200 V
100 V
12
8
4
V
DD
= 100 V
200 V
300 V
20
16
3000
Switching Characteristics
t
d (off)
Switching Time t (ns)
1000
t
r
300
t
d (on)
100
V
GS
= 10 V
duty < 1%
1
10
100
t
f
V
GS
I
D
= 50 A
Pulse Test
240
320
400
30
0
80
160
10
0.1
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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