PM45100K
Silicon N-Channel Power MOS FET Module for High-Speed Power Switching
Features
Equipped with Power MOS FET
Low on-resistance
High speed switching
Low drive current
Wide area of safe operation
Inherent parallel diode between source and drain
Isolated base from Terminal
Suitable for motor driver, switching regulator
and etc.
Pin Arrangement
D1
Rg
G1
S1
Rg
G2
S2
S2
S1/D2
Absolute Maximum Ratings
(Ta = 25°C) (Per FET chip)
Item
Symbol
Rating
Unit
–––––––––––––––––––––––––––––––––––––––––
Drain source
V
(BR)DSS
450
V
voltage
–––––––––––––––––––––––––––––––––––––––––
Gate source
V
(BR)GSS
±30
V
voltage
–––––––––––––––––––––––––––––––––––––––––
Drain current
I
D
100
A
–––––––––––––––––––––––––––––––––––––––––
Drain peak
I
D(peak)
240
A
current
–––––––––––––––––––––––––––––––––––––––––
Body-drain
I
DR
100
A
diode reverse
drain current
–––––––––––––––––––––––––––––––––––––––––
Body-drain
I
DR(peak)
240
A
diode reverse
peak current
–––––––––––––––––––––––––––––––––––––––––
Channel
Pch*
1
400
W
dissipation
–––––––––––––––––––––––––––––––––––––––––
Channel
Tch
150
°C
temperature
–––––––––––––––––––––––––––––––––––––––––
Storage
Tstg
–45 to +125
°C
temperature
–––––––––––––––––––––––––––––––––––––––––
Insulation
Viso*
2
2000
Vrms
dielectric
–––––––––––––––––––––––––––––––––––––––––
Notes: 1. Value at Ta = 25 °C
2. Base to terminals AC minute
Symbol Electrode Terminals Remarks
––––––––––––––––––––––––––––––––––––––
S1
Source 1 M5 screw Power terminal
––––––––––––––––––––––––––––––––––––––
D1
Drain 1
M5 screw Power terminal
––––––––––––––––––––––––––––––––––––––
S2
Source 2 M5 screw Power terminal
––––––––––––––––––––––––––––––––––––––
D2
Drain 2
M5 screw Power terminal
––––––––––––––––––––––––––––––––––––––
G1
Gate 1
# 110
Signal terminal
––––––––––––––––––––––––––––––––––––––
S1
Source 1 # 110
Signal terminal
––––––––––––––––––––––––––––––––––––––
G2
Gate 2
# 110
Signal terminal
––––––––––––––––––––––––––––––––––––––
S2
Source 2 # 110
Signal terminal
––––––––––––––––––––––––––––––––––––––
1
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