PM4575J
Electrical Characteristics (Ta = 25°C) (Per FET chip)
Item
Symbol Min Typ Max Unit
Test Condition
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Drain-source
V
(BR)DSS
450 —
—
V
I
D
= 10 mA, V
GS
= 0 V
breakdown voltage
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Gate-source leak current
I
GSS
—
—
±10
µA
V
GS
= ± 25 V, V
DS
= 0 V
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Gate-source breakdown voltage
V
(BR)GSS
±30 —
—
V
I
G
= ±100 µA, V
DS
= 0 V
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Drain leak current
I
DSS
—
—
500
µA
V
DS
= 360 V, V
GS
= 0 V
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Gate-source threshold voltage
V
GS(th)
2.0
—
3.0
V
I
D
= 1 mA, V
DS
= 10 V
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Drain-source saturation voltage
V
DS(on)
—
3.7
4.44 V
I
D
= 37 A, V
GS
= 10 V
*1
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Static Drain-source on
R
DS(on)
—
0.10 0.12
Ω
I
D
= 37 A, V
GS
= 10 V
*1
state resistance
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Forward transfer admittance
y
fs
—
45
—
S
I
D
= 37 A, V
DS
= 10 V
*1
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Input capacitance
Ciss
—
9600 —
pF
V
DS
= 10 V, V
GS
= 0 V
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f = 1 MHz
Output capacitance
Coss
—
2300 —
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Reverse transfer capacitance
Crss
—
330 —
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Turn-on delay time
t
d(on)
—
100 —
ns
I
D
= 37 A, V
GS
= 10 V
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Rg = 50
Ω
Rise time
t
r
—
310 —
R
L
= 1
Ω
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Turn-off delay time
t
d(off)
—
550 —
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Fall time
t
f
—
135 —
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Body-drain diode forward voltage V
DF
—
1.8
—
V
I
F
= 75 A, V
GS
= 0 V
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Body-drain diode reverse
t
rr
—
130 —
ns
I
F
= 75 A, V
GS
= 0 V
recovery time
di/dt = 100 A/µs
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Note: 1. Pulse Test
Mechanical characteristics
Item
Symbol
Condition
Rating
Unit
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Fixing strength
—
Mounting into main-terminal with M4 screw
1.45 to 1.95 N-m
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—
Mounting into heat sink with M5 screw
1.95 to 2.9
N-m
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Weight
—
Typical value
200
g
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2